EP3229310A2 - Substrat de ligne de transmission et boitier de semiconducteur - Google Patents

Substrat de ligne de transmission et boitier de semiconducteur Download PDF

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Publication number
EP3229310A2
EP3229310A2 EP17167803.0A EP17167803A EP3229310A2 EP 3229310 A2 EP3229310 A2 EP 3229310A2 EP 17167803 A EP17167803 A EP 17167803A EP 3229310 A2 EP3229310 A2 EP 3229310A2
Authority
EP
European Patent Office
Prior art keywords
spurious
wave
signal
transmission line
signal line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP17167803.0A
Other languages
German (de)
English (en)
Other versions
EP3229310A3 (fr
Inventor
Takuya Suzuki
Teruo Furuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to EP17177176.9A priority Critical patent/EP3252866B1/fr
Publication of EP3229310A2 publication Critical patent/EP3229310A2/fr
Publication of EP3229310A3 publication Critical patent/EP3229310A3/fr
Withdrawn legal-status Critical Current

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    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
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    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
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    • H01P1/16Auxiliary devices for mode selection, e.g. mode suppression or mode promotion; for mode conversion
    • H01P1/162Auxiliary devices for mode selection, e.g. mode suppression or mode promotion; for mode conversion absorbing spurious or unwanted modes of propagation
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    • H01L2924/3025Electromagnetic shielding
EP17167803.0A 2004-06-28 2005-06-24 Substrat de ligne de transmission et boitier de semiconducteur Withdrawn EP3229310A3 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP17177176.9A EP3252866B1 (fr) 2004-06-28 2005-06-24 Substrat de ligne de transmission et boitier de semiconducteur

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004190315A JP4056500B2 (ja) 2004-06-28 2004-06-28 伝送線路基板および半導体パッケージ
EP05765133.3A EP1777775B1 (fr) 2004-06-28 2005-06-24 Substrat de ligne de transmission et boîtier de semiconducteur

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
EP05765133.3A Division EP1777775B1 (fr) 2004-06-28 2005-06-24 Substrat de ligne de transmission et boîtier de semiconducteur

Related Child Applications (2)

Application Number Title Priority Date Filing Date
EP17177176.9A Division EP3252866B1 (fr) 2004-06-28 2005-06-24 Substrat de ligne de transmission et boitier de semiconducteur
EP17177176.9A Division-Into EP3252866B1 (fr) 2004-06-28 2005-06-24 Substrat de ligne de transmission et boitier de semiconducteur

Publications (2)

Publication Number Publication Date
EP3229310A2 true EP3229310A2 (fr) 2017-10-11
EP3229310A3 EP3229310A3 (fr) 2018-01-10

Family

ID=35780747

Family Applications (5)

Application Number Title Priority Date Filing Date
EP05765133.3A Active EP1777775B1 (fr) 2004-06-28 2005-06-24 Substrat de ligne de transmission et boîtier de semiconducteur
EP12153563A Active EP2463953B1 (fr) 2004-06-28 2005-06-24 Substrat de ligne de transmission et boitier de semiconducteur
EP17167803.0A Withdrawn EP3229310A3 (fr) 2004-06-28 2005-06-24 Substrat de ligne de transmission et boitier de semiconducteur
EP17177176.9A Active EP3252866B1 (fr) 2004-06-28 2005-06-24 Substrat de ligne de transmission et boitier de semiconducteur
EP12153560.3A Active EP2463952B1 (fr) 2004-06-28 2005-06-24 Substrat de ligne de transmission et boitier de semiconducteur

Family Applications Before (2)

Application Number Title Priority Date Filing Date
EP05765133.3A Active EP1777775B1 (fr) 2004-06-28 2005-06-24 Substrat de ligne de transmission et boîtier de semiconducteur
EP12153563A Active EP2463953B1 (fr) 2004-06-28 2005-06-24 Substrat de ligne de transmission et boitier de semiconducteur

Family Applications After (2)

Application Number Title Priority Date Filing Date
EP17177176.9A Active EP3252866B1 (fr) 2004-06-28 2005-06-24 Substrat de ligne de transmission et boitier de semiconducteur
EP12153560.3A Active EP2463952B1 (fr) 2004-06-28 2005-06-24 Substrat de ligne de transmission et boitier de semiconducteur

Country Status (4)

Country Link
US (1) US7498907B2 (fr)
EP (5) EP1777775B1 (fr)
JP (1) JP4056500B2 (fr)
WO (1) WO2006001388A1 (fr)

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US8130513B2 (en) * 2007-03-14 2012-03-06 Mitsubishi Electric Corporation Radio-frequency package
JP4978265B2 (ja) * 2007-03-23 2012-07-18 三菱電機株式会社 高周波モジュール
JP4670853B2 (ja) * 2007-10-16 2011-04-13 三菱電機株式会社 送受信モジュール
JP2009182398A (ja) * 2008-01-29 2009-08-13 Toshiba Corp 高周波基板線路
JP4492708B2 (ja) * 2008-01-31 2010-06-30 Tdk株式会社 高周波モジュール
JP5094515B2 (ja) * 2008-04-09 2012-12-12 三菱電機株式会社 ミリ波帯スイッチ
EP2284881B1 (fr) * 2008-05-12 2021-02-17 Mitsubishi Electric Corporation Module haute fréquence avec un boîtier et plusieurs circuits haute fréquence
JP2010080831A (ja) * 2008-09-29 2010-04-08 Kyocera Corp 配線基板、これを用いた電子部品及び電子機器
JP5093138B2 (ja) * 2009-02-02 2012-12-05 三菱電機株式会社 マイクロ波送受信モジュール
JP5495619B2 (ja) * 2009-05-21 2014-05-21 三菱電機株式会社 多層高周波パッケージ基板
JP5334686B2 (ja) * 2009-05-27 2013-11-06 三菱電機株式会社 多層高周波パッケージ基板
JP5656278B2 (ja) * 2009-07-27 2015-01-21 Nec東芝スペースシステム株式会社 気密封止筐体および気密封止筐体製造方法
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US8912860B2 (en) * 2009-09-08 2014-12-16 Siklu Communication ltd. Millimeter-wave bare IC mounted within a laminated PCB and usable in a waveguide transition
US8878652B2 (en) * 2009-11-13 2014-11-04 Zih Corp. Encoding module, associated encoding element, connector, printer-encoder and access control system
JP2011187550A (ja) * 2010-03-05 2011-09-22 Toshiba Corp 高周波パッケージ
US9398694B2 (en) 2011-01-18 2016-07-19 Sony Corporation Method of manufacturing a package for embedding one or more electronic components
JP5851439B2 (ja) 2013-03-07 2016-02-03 株式会社東芝 高周波半導体用パッケージ
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EP2463952A1 (fr) 2012-06-13
EP3252866A1 (fr) 2017-12-06
JP2006014088A (ja) 2006-01-12
EP1777775A4 (fr) 2009-04-15
EP3229310A3 (fr) 2018-01-10
EP2463953B1 (fr) 2013-01-16
EP1777775B1 (fr) 2017-04-26
US20070200204A1 (en) 2007-08-30
WO2006001388A1 (fr) 2006-01-05
EP3252866B1 (fr) 2021-08-18
EP2463953A1 (fr) 2012-06-13
EP1777775A1 (fr) 2007-04-25
JP4056500B2 (ja) 2008-03-05
EP2463952B1 (fr) 2017-06-21

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