EP3227910A1 - Procédé de production de substrats céramique métallisés - Google Patents
Procédé de production de substrats céramique métallisésInfo
- Publication number
- EP3227910A1 EP3227910A1 EP15807615.8A EP15807615A EP3227910A1 EP 3227910 A1 EP3227910 A1 EP 3227910A1 EP 15807615 A EP15807615 A EP 15807615A EP 3227910 A1 EP3227910 A1 EP 3227910A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- support
- carrier
- arrangement
- edge
- ceramic substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 240
- 239000000919 ceramic Substances 0.000 title claims abstract description 174
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 124
- 239000002184 metal Substances 0.000 claims abstract description 124
- 238000000034 method Methods 0.000 claims description 143
- 238000010438 heat treatment Methods 0.000 claims description 16
- 230000032258 transport Effects 0.000 claims description 12
- 239000010410 layer Substances 0.000 description 123
- 239000000463 material Substances 0.000 description 54
- 230000008569 process Effects 0.000 description 44
- 239000000969 carrier Substances 0.000 description 19
- 238000005452 bending Methods 0.000 description 17
- 239000011888 foil Substances 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 9
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 230000003993 interaction Effects 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 230000036961 partial effect Effects 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 229910052878 cordierite Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 3
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 229910052863 mullite Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- 230000000284 resting effect Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- -1 steatite Chemical compound 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006735 deficit Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000505 Al2TiO5 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052915 alkaline earth metal silicate Inorganic materials 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000011143 downstream manufacturing Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910052919 magnesium silicate Inorganic materials 0.000 description 1
- 235000019792 magnesium silicate Nutrition 0.000 description 1
- 239000000391 magnesium silicate Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- AABBHSMFGKYLKE-SNAWJCMRSA-N propan-2-yl (e)-but-2-enoate Chemical compound C\C=C\C(=O)OC(C)C AABBHSMFGKYLKE-SNAWJCMRSA-N 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/343—Alumina or aluminates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/365—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/366—Aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/368—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/402—Aluminium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/407—Copper
Definitions
- the present invention relates to a method for producing a metallized ceramic substrate, to the metallized ceramic substrates obtainable by this method and to supports used in the method according to the invention for producing the metallized ceramic substrates.
- Metallized ceramic substrates are used in the field of power semiconductor modules.
- a ceramic substrate is provided on the upper side and possibly on the underside with a metallization, wherein usually at least one metallized side later has a circuit-technical structure, for example, produced by etching processes.
- the known method for producing such metallized ceramic substrates is by eutectic bonding and is commonly referred to as a direct-bonding process.
- the bonding of the ceramic substrate and the metal foil is carried out in an oven, so-called bonding furnaces generally being used.
- Corresponding bonding ovens often referred to as tunnel ovens include, inter alia, an elongated tunnel-like furnace space (also called muffle) and a transport device tion with a transport element, for example in the form of a flexible and heat-resistant conveyor belt for transporting the material to be treated by the heated with a heater furnace chamber.
- the ceramic substrates are positioned together with the metal foil on a carrier on the conveyor belt and then passed through in the bonding oven by the conveyor belt driven a heating area in which the required bonding temperature is reached. At the end of the bonding process, the resulting composite of ceramic substrate and metal foil is cooled again.
- This method can be used in principle for the production of single-sidedly metallized ceramic substrates as well as for the production of double-sided metallized substrates.
- the production of double-sided metallized substrates usually takes place via a two-stage bonding process.
- the ceramic is bonded in two furnace passes to the metal layers on opposite sides of the ceramic substrate.
- a ceramic substrate is first positioned on a support and then placed on the overhead, i. on the side facing away from the carrier, covered with a metal foil.
- this side of the ceramic substrate is connected to the metal layer and subsequently the resulting assembly is cooled.
- the substrate is turned over and in a second bonding step, the other side of the substrate is provided in the same way with a metal layer.
- the metal layer already formed on the ceramic substrate in the first bonding step would rest on the carrier, whereby due to the required bond heat for the second metallization, this already formed first metal layer may also be melted.
- Corresponding misalignments can result, for example, from residues of the carrier material or other foreign bodies which adhere to the molten metal layer after removal from the carrier.
- the one-sided bonding process is carried out, for example due to the bimetallic effect of the single-sidedly bonded substrate, during the heating in the bonding furnace, bending of the metallized substrates on one side may occur.
- DE 10 2004 056 879 A describes a method for producing double-sided metallized ceramic substrates using the direct bonding process, in which an arrangement of at least two metal layers and a ceramic arranged between the metal layers Substrate is positioned on a carrier provided with a release layer and then the assembly is heated to a temperature at which bonding of the two metal layers to the ceramic substrate occurs.
- the use of a corresponding separating layer should not lead to a connection of the carrier to the adjacent metal layer of the arrangement. Nevertheless, even with the use of such separating layers, at least one of the already metallized layers has a large area on a contact surface, and it is desirable to avoid such an additional contact surface with the metallized substrate sides as far as possible.
- DE 10 2010 023 637 A describes a method for producing double-sidedly metallized substrates in a single method step, wherein a first metal layer, a substrate and a second metal layer are successively positioned on a support in the stated order, the support being attached to the substrate Top facing the assembly of the first and second metal plates and the substrate has a plurality of projecting lugs tapering in the direction of the first and second metal plate and substrate assembly. These projecting lugs are preferably distributed over the entire top of the carrier. According to DE 10 2010 023 637 A, due to the structuring of the carrier with tips, it is achieved that the composite of metal plates and ceramic substrate can be detached from the carrier without residue after the double-sided bonding process.
- WO 2014/049414 relates to a direct-bonding method in which the substrates are positioned on a planar support which extends beyond the support surface of the support. having running grooves or furrows.
- US 2007/261778 also describes a direct bonding process using a planar support whose support surface is formed by grooves or columnar support points. Even with these methods, however, numerous points of contact still remain between the metal layer to be bonded and the carrier, which is disadvantageous for the reasons stated.
- Corresponding carriers - also called bond boats - are shown in Figures a and b.
- the double-sided metallized substrates produced with the aid of these so-called bond boats also have disadvantages.
- the problem occurs that already twisted substrates 1 slip into a position of the lowest center of gravity, thus further increasing the torsion already resulting from the ceramic substrate or the first process step.
- the deflection of the substrates in the longitudinal direction can be enhanced. This results in substrates that suffer undesirable losses in their flatness. Both undesirable strengthening of the torsion and undesirable enhancement of the deflection of the substrates to be bonded affect the flatness of the resulting metallized substrates.
- WO 2004/032593 describes a carrier for thinnest substrates, in which the support element for the substrate to be placed on is designed as a frame element, so that here, too, a contact between carrier and substrate takes place only in the edge region of the circumference of the substrates.
- the substrate is placed rigidly on these marginally positioned frame elements and these are designed so that a deflection of the substrate is substantially completely avoided.
- the thinnest substrates of WO2004 / 032593 are glass or polymer foils with thicknesses of less than 0.3 mm, which are bendable due to their small thickness, but thus do not have a self-supporting structure, as a result of which, in the processing process, due to their own weight sag and easily damaged in the manufacturing process.
- WO201 / 104222 also describes a holder for multilayer substrates, in which the substrates are held over an edge-side frame. This application is primarily directed to glass substrates for the production of solar modules.
- the surfaces of the substrates to be processed are held in one plane and a possible bending or buckling of the substrates under the influence of high process temperatures according to WO2011 / 104222 by Cross struts counteracted with additional support points for the substrate surfaces.
- Cross struts with additional support points for the substrate surfaces would, when used in the method according to the invention, again bring about additional points of contact between the metal layer to be bonded and the support, which should be avoided for the abovementioned reasons.
- a curvature or bending of the substrates occurring in the bonding process should not be counteracted mechanically for the reasons stated above.
- the present invention has the object to provide an improved method for producing single-sidedly metallized ceramic substrates, with which two-sided metallized ceramic substrates can be obtained by a two-stage procedure.
- the present invention has the object to provide a method for producing single-sided metallized ceramic substrates, with which two-sided metallized ceramic substrates can be obtained by a two-stage procedure and in which preferably the position accuracy of metal layer to ceramic is improved.
- the present invention has the object to provide a method for producing single-sided metallized ceramic substrates, with which two-sided metallized ceramic substrates can be obtained by a two-step procedure and in which the resulting metallized ceramic substrates improved flatness, especially in thin ceramic substrates having a thickness of 0.4 mm, and having reduced torsion, which is particularly important in subsequent system soldering or in a bottomless module.
- step (1) on at least one edge edges thereof has at least one support on which rests the arrangement of step (1) in at least one edge portion of the arrangement with at least one of its outer edges, and
- the at least one support on the support is arranged so that the arrangement is inclined during positioning on the support of the wearer and / or
- the carrier has on at least one of its edge edges at least one boundary in the form of at least one stop or at least one edge.
- the inclination of the carrier can be achieved by a pivoting movement up to a zero slope or there is also a tendency to a negative angle in question.
- metal layers are, for example, metal foils or metal sheets made of copper, of a copper alloy or of a copper-containing alloy or of aluminum, of an aluminum alloy or of an aluminum-containing alloy.
- Ceramic substrates in the context of the present invention are the preferably flat or plate-shaped elements consisting of a ceramic material, which are or are provided with metallization on two of their surface sides not around angular ceramic bodies, as used in particular in DE 10 2008 001 224.
- the planar or plate-shaped ceramic substrates deviate only by a maximum of 1% from an edge length of the ceramic substrates, based on an ideal planar plane (eg with a substrate length of 200 mm, this deviation would be a maximum of 2 mm.)
- the ceramic substrates have at best a slight curvature (and in no case an angular curvature).
- the carrier is inventively provided that this also has only a slight curvature.
- the carrier has a curvature of not more than 5%, preferably not more than 3%, more preferably not more than 1%, in each case based on the edge length of the carrier and in relation to an ideal planar plane.
- an arrangement is understood as meaning a composite of at least one metal layer which is provided on a ceramic substrate, wherein the arrangement may be present before, during or after the bonding.
- the arrangement is preferably substantially rectangular, including a substantially square arrangement.
- a substantially rectangular arrangement has two opposite substantially equal long longitudinal edges (long edges) and two mutually opposite substantially equally long transverse edges (short edges).
- a square arrangement has four edges of substantially equal length.
- the term "essentially” in the context of the invention means deviations from the respective exact value by +/- 10%, preferably by +/- 5% and / or deviations in the form of changes insignificant for the function.
- the method according to the invention provides that the arrangement, comprising the at least one metal layer and the ceramic substrate, in at least one edge-side portion of the arrangement with at least one of its outer edges, on at least one support on at least one of the edge edges the support is arranged, rests, and the arrangement comprising the at least one metal layer and the ceramic substrate, before or during the actual bonding in step (2) is inclined.
- This inclination of the arrangement can take place in that the carrier with the at least one support arranged thereon on which the arrangement comprising the at least one metal layer and the ceramic substrate is positioned, after the positioning of the arrangement is either mechanically inclined or at the time at which the arrangement comprising the at least one metal layer and the ceramic substrate, positioned on the at least one support of the carrier is already inclined.
- the inclination of the arrangement can also take place in that the at least one support or one or more of the supports arranged on the support itself, on which the arrangement comprising the at least one metal layer and the ceramic substrate, is positioned, after the positioning of the Arrangement is either mechanically inclined or at the time at which the arrangement comprising the at least one metal layer and the ceramic substrate is positioned on the at least one support of the carrier is already inclined.
- the inclination of the arrangement takes place in that both the carrier and at least one of the supports arranged thereon are correspondingly inclined or already inclined after the positioning of the arrangement.
- the inclination of the arrangement comprising the at least one metal layer and the ceramic substrate, can be effected by inclining the entire carrier, comprising the at least one support, and / or by the inclination of the at least one support.
- tilting can be carried out both in method step (1 ) and / or optionally in process step (4), ie each before heating the assembly, or in process step (2) and / or optionally in process step (5), i. each time during the heating of the arrangement, take place.
- the inclination of the arrangement on the carrier results in a defined alignment of the at least one metal layer and the ceramic substrate.
- the at least one metal layer and the ceramic substrate slip through the inclination of the carrier itself or due to the inclination that passes over the
- On the carrier appropriately arranged arranged at least one support is effected in a predetermined position, so that their arrangement is considered to each other as defined.
- a fixation of the at least one metal layer and the ceramic substrate is achieved by the inclination of the carrier or at least one support such that slipping in the subsequent process steps is avoided.
- the above-described bonding process with the method steps (1) and (2) is carried out only once.
- the arrangement comprising at least a first metal layer and a ceramic substrate is positioned on the carrier according to the invention such that the ceramic substrate rests on the at least one support attached to the carrier and the at least one metal layer on the the support of the carrier side facing away from the ceramic substrate is applied.
- the thus positioned arrangement is then bonded in step (2).
- step (3) positioning the assembly of step (3) and at least one further metal layer on a support as defined above;
- the ceramic substrate metallized on the side of the ceramic substrate facing away from the carrier is rotated in such a way that, in a next method step, the previously non-metallized ceramic substrate Side another metal layer can be applied in the same way.
- the first metallized side of the ceramic substrate is located on the side facing the carrier.
- the turning of the metallized ceramic substrate from method step (2) takes place by rotating about an axis of rotation parallel to the longest edge (longitudinal edge) or shortest edge (transverse edge) of the one-sided metallized substrate, corresponding to tilting about the longitudinal or transverse edge.
- method steps (1) to (5) in principle further method steps can be carried out.
- the positioning in method step (1) and / or optionally in method step (4) can be carried out by mechanical alignment of ceramic substrate and metal layer manually or by means of a suitable alignment device. It is also possible, if necessary, for the one-sidedly metallized ceramic substrates resulting from process step (2) to undergo additional alignment by suitable measures before process step (4) and, for example, deflection of the one-sidedly metallized substrates obtained by suitable bonding in the first bonding step Steps is reduced.
- the already one-sided metallized substrate be struck in the second step on the opposite longitudinal edge.
- the alignment of the metal layer on the ceramic substrate which has already been metallized on one side would take place asymmetrically with respect to the opposite metal layer during positioning on the inclined support.
- different carriers are usually used in the first and second bonding step. The use of a second different carrier makes it possible, in particular, to strike the same edges in the first and in the second bonding step and thus to define the positioning of the second metal layer with the first metal layer on the ceramic substrate as accurately as possible.
- a carrier is used which in construction corresponds to the carrier of the first bonding step from method steps (1) and (2) and is mirrored by the same edge in relation to the latter the one-sided metallized substrate from process step (2) was rotated.
- a rotation of the one-sided metallized substrate around the longitudinal edge (long edge) takes place preferably when using carriers according to the invention, in which the supports are attached to the long edges of the carrier.
- a rotation of the one-sided metallized substrate about the transverse edge (short edge) is preferably carried out when using carriers according to the invention, in which the supports are attached to the short edges of the carrier.
- an embodiment of a two-stage bonding method is possible in which the metal layer and the ceramic substrate are dimensioned or the position and size of the usable area on the substrate are designed so that the striking of the metallized substrate to the support in Method step (4) after rotating according to method step (3) for the resulting two-sided metallized product has no negative effects, for example in the form of damage to the metal layer in the edge region of the metallized substrate has.
- a metallization is provided, which leaves a protruding ceramic region in the edge region in which the arrangements rest on the at least one support of the support. In such cases, it is also conceivable to use a carrier with identical configuration in the first and second bonding step.
- the arrangement according to the invention both the arrangement of method step (1) and optionally the arrangement of method step (4), in each case exclusively in at least one peripheral portion of the arrangement with at least one of its outer edges rests.
- the arrangements according to the invention except in the outer edge area, have no further contact due to support on the support or supports and / or stops attached thereto.
- this exclusive peripheral portion of the arrangements according to the invention refers to the region of the circumference in which the arrangements according to the invention during the bonding process on the rest according to the invention.
- the ceramic substrates used in the method according to the invention can already have a torsion as well as some self-bending per se before the actual bonding process is carried out in process step (2) and optionally before the second bonding process is carried out in process step (4).
- the ceramic substrates used in the process according to the invention are not completely flat.
- An existing intrinsic bending and / or torsion of the substrate may change, ie amplify and / or reduce, during the subsequent bonding process in method step (2), and optionally in method step (5), under the action of corresponding bonding temperatures.
- a formation or reinforcement of such a bend due to the so-called bimetallic effect of the metallized substrates should be mentioned.
- the degree of flexure may also be effected by the inherent weight of the ceramic-metal composite in some combinations of materials and may be selectively affected by appropriate selection of the lateral support pads which reduce sagging of the ceramic substrate assembly and the at least one metal layer.
- the arrangement comprising at least a first metal layer and a ceramic substrate is positioned on one or more supports arranged on the support such that the arrangement is only in at least one edge-side partial area with at least one of its Outer edges rests on the support of the carrier, on the one hand, a reduction of a possibly existing torsion is achieved.
- the bending of the metallized ceramic substrates can also be influenced in a targeted manner by taking into account the material properties and a suitable choice of supporting supports
- This effect of reducing the torsion is preferably achieved when the twisted ceramic substrate rests on at least two, preferably three, points on at least two, preferably three, of the supports according to the invention.
- the inventive method it is thus possible to produce reproducible one-sided and / or double-sided metallized ceramic substrates in series, which have a low torsion.
- This makes it possible to produce ceramic substrates which are one-sidedly and / or double-sidedly metallized in series and which have constant characteristics, in particular with regard to torsion, flatness and orientation of the individual layers, as well as the quality of the metallic surfaces.
- the present invention therefore relates in particular to a method according to the invention which has a large number of one-sided and / or double-sided metallized ceramic substrates with substantially constant properties of torsion, flatness, layer orientation and quality of the metallic surfaces.
- carrier used in the method according to the invention.
- a carrier also called a bond boat or bond ship.
- a carrier denotes the entirety for accommodating the arrangements according to the invention.
- a carrier in the sense of the preceding invention comprises at least one basic framework, hereinafter referred to as a supporting framework, which If necessary, can be provided with an insert plate, as well as at least one support for receiving the arrangement according to the invention (the bond-Guts) and optionally at least one stop as a limitation.
- the support frame forms the basic framework of the support according to the invention, on or on which the further support elements according to the invention are attached.
- the support frame can be configured for example in the form of a frame or interconnected struts.
- the carrier according to the invention comprises at least one support for receiving a substrate or an arrangement, comprising at least a first metal layer and a ceramic substrate, the so-called bond good.
- the at least one support is arranged on the carrier so that the arrangement is inclined during positioning on the support of the carrier.
- the at least one overlay is provided on at least one of the edge edges of the carrier and configured and arranged on the carrier such that an arrangement positioned thereon, comprising at least a first metal layer and a ceramic substrate, or a bond material to be positioned thereon, can be tilted is and / or is inclined.
- the inclination of the bond material or the arrangement can be achieved by the construction of the at least one support attached to the support and / or by the nature of their arrangement on the support, for example by their number, height and / or positioning on the Carrier.
- the attached to the support at least one support is designed such that the bond material to be positioned thereon is inclined. This can be achieved, for example, by the design or geometric design of the at least one support but also by the selected number, height and / or positioning of the at least one support on the support. This is preferably chosen such that an inclined plane is formed which is intended to correspond to the inclination of the bond material or the arrangement to be positioned thereon comprising at least a first metal layer and a ceramic substrate in such a way that it leads to a targeted alignment of the position comes from ceramic substrate and metal layer to each other.
- the at least one support is arranged on the carrier such that the arrangement by inclining the entire carrier in process step (1) after positioning the assembly on the at least one support of the carrier and / or by inclining the carrier during of the process step (2) is inclined.
- a combination of both variants is possible, namely tilting the arrangement by placing on at least one suitably arranged and designed edition and tilting of the entire carrier.
- the at least one support provided on the support is dimensioned in such a way that, on the one hand, the smallest possible support surface and thus contact surface with the bond material or the components of the arrangement positioned thereon, in order to avoid interference from interactions between support and ceramic substrate or metallized substrate as low as possible.
- the dimensioning of the at least one overlay must be selected such that possible substrate size fluctuations during the bonding process and / or differences in the coefficients of expansion between the support and the arrangement (ceramic substrate and metal layer) positioned thereon can be absorbed.
- the supports according to the invention are dimensioned such that the length of the respective support, which extends at right angles to the outer edge with which the arrangement is positioned on the corresponding support (ie towards the middle of the bonding material), is not more than 10 mm , more preferably not more than 5 mm, more preferably not more than 3 mm.
- a preferred edge-side subregion of the arrangements according to the invention results, which extends up to 10 mm, preferably up to 5 mm, more preferably up to 3 mm at right angles from the outer edge of the arrangement (ie towards the center of the arrangement) ,
- the individual pads can each be the same or different dimensions.
- the design of the at least one support is preferably to be chosen so that the arrangement positioned thereon before or during bonding slips into the desired position and the intended orientation of the individual components the arrangement is made possible with each other. This is particularly preferred in the variants in which the inclination of the arrangement is achieved and / or assisted by the inclination of the at least one support.
- At least one support for receiving the arrangement to be positioned thereon is provided on the support according to the invention.
- two, three, four, five, six or more identical or differently configured supports on the support.
- two, three, four or five identical or differently configured pads are provided.
- three, four or five identical or differently designed pads are provided.
- the positioned arrangement must necessarily be supported by at least one further edge. It is conceivable here that the arrangement with the edge which lies opposite the edge resting on the one support, rests on the support, for example on its insert plate and / or on at least one stop positioned on this opposite edge of the support. Such an embodiment is less preferred according to the invention.
- a preferred embodiment is characterized in that the carrier has at least two supports on the edge side, on which the arrangement, comprising at least one first metal layer and one ceramic substrate, rests in at least two edge-side partial regions with two of its outer edges. In such an embodiment, therefore, two supports are preferably provided on two outer edges of the carrier. These two requirements may be the same or different.
- the two pads may be provided at opposite outer edges or adjacent outer edges of the carrier.
- the carrier comprises at least three editions on the edge, on which the arrangement, comprising at least a first metal layer and a ceramic substrate, rests in at least three peripheral partial areas with at least two of its outer edges.
- two supports are preferably provided on an outer edge of the support, in the case of essentially rectangular arrangements preferably on one of the long edges (longitudinal edges) of the support, and another support is provided on an opposite edge, preferably also a long edge. or on an outer edge of the carrier adjacent thereto, in the case of substantially rectangular arrangements, preferably on one of the short edges (transverse edges) of the carrier.
- These three can Pads each be the same or different.
- the support according to the invention has at least four supports.
- a stable contact of the twisted substrate over three points on three of the supports is achieved.
- On the freestanding point of the arrangement thereby a lesser or no pressure is exerted, whereby a bending moment arises.
- this bending moment and the plastic flow of the ceramic at the bonding temperature the torsion of the substrate is reduced or not further increased by the prevention of slippage in the deepest center of gravity of the arrangement.
- a further preferred embodiment is characterized in that the carrier comprises at least four supports on the edge, on which the arrangement, comprising at least a first metal layer and a ceramic substrate, rests in at least four edge-side partial areas with at least two of its outer edges.
- two supports are preferably provided on each of two opposite outer edges of the support, in the case of essentially rectangular arrangements, preferably on the two long edges (longitudinal edges). In this case, these four requirements may each be the same or different. It is also conceivable that two pads are each provided on two adjacent outer edges of the carrier.
- a further preferred embodiment is characterized in that the carrier comprises at least five editions on the edge, on which the arrangement, comprising at least a first metal layer and a ceramic substrate, rests in at least five peripheral partial areas with at least three of its outer edges.
- two supports are preferably provided on two mutually opposite outer edges of the carrier, in the case of essentially rectangular arrangements preferably on the two long edges (longitudinal edges), and a further support is provided on a further outer edge of the carrier, essentially rectangular arrangements preferably on one of the short edges (transverse edges), provided.
- These five editions may each be the same or different.
- the at least one support arranged on the support for receiving the components of the arrangement can also be inclined only after the positioning of the individual components of the arrangement, for example by adjusting the height and / or position (inclination) of the at least one support, so that it comes to a positioning of the individual components of the arrangement.
- the arrangement undergoes an inclination after positioning on the at least one support of the support by tilting the entire support, as already described above.
- the arrangement undergoes, after being positioned on the at least one support of the support, an inclination by the supports and by the inclination of the entire support.
- the inclined support and / or the attached thereto at least one inclined support can be approximated to a horizontal position after positioning and aligning the components of the arrangement.
- the inclination and the choice of materials of the wearer are to be chosen so that it does not come to a slipping of the individual components of the arrangement in the case where the intended approach of the carrier to a horizontal position.
- the shape and size of the at least one support is to be designed so that the arrangement positioned thereon does not come into contact with other components of the support due to a bending, in particular a bimetallic deflection occurring, for example, due to the bonding process.
- a bimetallic deflection usually occurs in the second bonding step. Particularly important is an exact alignment of ceramic substrate and metal layer to each other therefore before and during the second bonding step, ie in the process step (4) according to the invention. Examples of possible configurations of the at least one support provided on the carriers according to the invention are shown in FIG. 3.
- the intended at least one support is attached to the support in such a way that an inclination of the arrangement positioned thereon is effected or can be effected , Due to the inclination, during or after the positioning of the ceramic substrate layer and the metal layer, the individual layers are positioned relative to one another.
- the carrier has at least one boundary in the form of at least one stop or at least one edge as boundary on the edge.
- a limitation is provided on at least one of the edge of the carrier lying in each case by the inclination to which the arrangement slips due to the inclination of the carrier or the supports. If the arrangement comprising the at least one metal layer and the ceramic substrate is then positioned on the at least one support of the carrier, the individual layers of the arrangement can slip following the inclination caused by the supports and thus abut the boundary of the carrier. As a result, a clearly defined positioning of the individual layers of the arrangement is achieved, which thus also have a clearly defined positioning relative to each other.
- the carrier according to the invention has at least one stop for limiting the carrier.
- one, two or three identically or differently borrowed attacks are provided.
- two or three identically or differently configured stops are provided.
- one, two or three identically designed stops are provided.
- two or three identically configured stops are provided.
- a preferred embodiment is characterized in that the carrier has at least one stop on at least one of the edge located below by the inclination of the positioned arrangement. At least two stops are preferably provided on at least one of the edges located below by the inclination of the positioned arrangement. Further preferred are two stops on one provided the underlying edges of the positioned arrangement, preferably at the long lower edge (longitudinal edge). In this case, these two attacks can be the same or different.
- At least two stops are provided on at least two of the edges located below by the inclination of the positioned arrangement, a stop on the long underlying edge (longitudinal edge) of the positioned arrangement is preferably provided, and a second stop is on the short underlying one Edge (transverse edge) of the positioned arrangement provided.
- these two stops can be formed the same or different.
- At least three stops are provided on at least two of the edges located below by the inclination of the positioned arrangement, two stops on the long underlying edge (longitudinal edge) of the positioned arrangement are preferably provided, and a third stop is on the short one below Edge (transverse edge) of the positioned arrangement provided.
- these three stops can each be the same or different.
- the inclined arrangement comprising at least a first metal layer and a ceramic substrate after To fix the inclination of the arrangement on the supports of the wearer.
- Conceivable are various geometric bases such. rectangular, round, triangular, etc. Typically, these are projected upwards or extruded to form columns with the respective base area.
- the boundary is designed so that it is provided in the sense of a projection or stop on the support side of the arrangement to be positioned on the edge of the carrier and protrudes vertically beyond the carrier.
- the height of the boundary or of the at least one stop is to be selected such that the arrangements positioned on the at least one support do not have the stops and thus of the at least one support due to a deflection, for example a bimetallic deflection resulting from the bonding process slip.
- the stops are preferably made as narrow as possible, so that they have a low con- have contact surface to the bond Good.
- the stops are designed so that they simultaneously fulfill the function of the support or the supports are designed so that they simultaneously act as a limiting stop. Examples of such embodiments, which represent a combination of stop and support, is shown by way of example in FIG.
- an embodiment is preferred in which at least one, preferably two stops on the long lower edge (longitudinal edge) of the positioned arrangement are provided and wherein a further stop on the short underlying edge (transverse edge) of the positioned arrangement is provided, and wherein at least one, preferably two supports are provided on the long, underlying edge lying opposite the long edge, and wherein the at least one, preferably the two stops on the long underlying edge are formed at the same time as a support.
- a corresponding embodiment is shown by way of example in FIGS. 2c and 2d. The respective conditions, stops and the combination of support and stop can each be the same or different.
- An embodiment in which both a longitudinal and a transverse edge by inclination form a lower edge is sketched in Figure 2b and 2d.
- FIGS. 2a and 2c shows a possible rectangular geometry of the bonding material, with rotations about the edge 5 (see FIGS. 2a and 2c) or about the edges 8 and 9 (see FIGS. 2b and 2d) being possible for the inclination thereof.
- the substantially rectangular plane of the bond material is tilted only over an edge 5, so that, following the inclination thereof, a total of two corners 6 and 7 lie on a substantially identical lower level are located.
- the substantially rectangular plane of the bonding material is tilted about two edges 8 and 9, so that overall only one corner 10 of the same is at the lowest level.
- FIGS. 2 b and 2 d the embodiment shown in FIGS. 2 b and 2 d is preferred because it permits a more accurate positioning of the individual components of the arrangement relative to each other due to the two-sided inclination.
- the term "level” is preferably understood to mean the lateral plane in which the substantially rectangular plane of the bond material positioned on the carrier can at least partially be located. to which all other information is relatively related, the level (ie the plane) which is spanned by the bond good in an un tilted form, in which thus the substantially rectangular plane of the bond material positioned on the carrier ( horizontal) (steps (1) and (4), respectively) before it is tilted, and which is usually at the highest level. All other concepts of the "level” are to be understood relative to this initial level, meaning in particular a "lower level” a lateral plane (ie a horizontal plane) which is displaced in a vertical direction parallel to the level of the initial level.
- the lower level is thus lowered vertically relative to the starting level.
- a "lowest level” is understood to mean the lateral plane (ie the horizontally mounted plane) which is displaced in a vertical direction parallel to the plane of the output level and has the highest, ie greatest, relative (vertical) displacement relative to the plane
- the lowest level is also vertically lowered relative to the starting level, whereby the lowest level always has a greater vertical displacement relative to the starting level than the lower level (according to the invention, the cases where there is only a relative vertical displacement is referred to as a case of a lower level, in which case the lower level is equal to the lowest level).
- the bond material inclined out of this about the axes of rotation 8 and 9 then has an inclination, which is described by the angles ⁇ , ⁇ and ⁇ shown in FIG.
- an angle ⁇ which is generally 0.5 to 45 °, preferably 0.5 to 40 °, more preferably 0.5 to 35 °, more preferably 1 to 30 °, further preferably 1 and 25 °.
- the resulting angle ⁇ must be large enough that alignment by slipping of at least one metal layer and the ceramic substrate is possible, but again should not be too large, otherwise the height of the carrier used is too large and in turn the height of the furnace, in particular a tunnel kiln, would have to be increased.
- the individual metal layers or the ceramic substrate become aligned with slippage, so that a with regard to the alignment of metal layers and ceramic substrate to each other defined arrangement is achieved.
- the individual layers or the substrate slip following the inclination of the supports placed on the support until they hit a boundary (for example in the form of the stops according to the invention).
- a boundary at the edge lying downwards through the inclination may be sufficient for the arrangement comprising at least a first metal layer and a ceramic Substrate, fix.
- the boundary can be formed from a projecting over the support in the direction of the arrangement projection or stop, which is either integrally formed and thus continuous, or is interrupted and thus from a plurality of individualized, ie at least two individual projections or attacks exists.
- the corresponding boundary may also be formed by an overhanging projection or abutment located on the two adjacent inclined edges of the carrier and on the lower one Point 10 runs.
- the boundary in the embodiment according to FIG. 2b is formed from two or more, for example two, three, four, five or six, short and separate projections or stops, the projections or stops on the two following provided below inclined, adjacent edges of the carrier.
- the carrier which is used in the method according to the invention, may have an insert plate, which can be inserted into the support frame of the carrier.
- the insert plate preferably has a thickness of in particular 0.1 to 10 mm, preferably 0.15 to 5 mm, more preferably 0.25 to 3 mm.
- the insert plate can be designed so that the surface is completely closed or partially open below the positioned on the carrier assembly. If no insert plate is inserted into the support frame, the surface is open below the positioned on the carrier assembly.
- a completely closed insert plate can be provided, or a type of perforated plate or a bottom grid. An open embodiment without insert plate is less preferred.
- a closed or partially open embodiment of the carrier can be obtained either by forming a correspondingly shaped support frame from the corresponding solid material or by inserting a corresponding insert plate or a grid into a support frame in the form of a frame or linkage.
- the insert plate of the carrier according to the invention preferably consists of a high-temperature-resistant material, which is inert and / or not wettable at the applied temperatures of the bonding process.
- a high-temperature-resistant material such as a ceramic material.
- an oxide ceramic material e.g. Alumina, or a carbide, nitridic, silicic or metallic material used.
- the carrier in the sense of the present invention comprises as main components the supporting framework, at least one support attached to the support, as defined above, and optionally at least one stop, as defined above, and optionally an insert plate, as defined above.
- Corresponding carriers are generally also referred to in the field of direct metal bonding Bond boats, Bond ships or similar.
- the supports of the present invention can be formed by individual, independent components and variably assembled. However, they can also be firmly joined together to form a quasi-"one-piece" carrier which has the functional elements of the at least one overlay and the at least one stop defined herein.
- the support used in the method according to the invention is preferably made of a material having high heat resistance, which is inert and / or non-wettable at the applied temperatures of the bonding process.
- Suitable materials for the support of the invention are in particular materials selected from the group consisting of graphite, mullite, steatite, cordierite, ZrO 2 , Al 2 O 3 , AIN, BN, ZrN, S13N4, SiC and mixtures thereof in question.
- These materials are also suitable for the individual support elements according to the invention, such as support frame, insert plate, the at least one support and the at least one stop.
- the individual elements can each be formed from the same or different materials.
- the support itself or the various support elements provided next to the insert plate may, in addition to the abovementioned materials, also be formed from another high-temperature-resistant material, such as, for example, a ceramic material, such as e.g. preferably of an oxide ceramic material, e.g. Alumina, or a carbide, nitridic, silicic or metallic material.
- a ceramic material such as e.g. preferably of an oxide ceramic material, e.g. Alumina, or a carbide, nitridic, silicic or metallic material.
- high-temperature-resistant metals in particular for the support or the support framework, the stops and the bearing surfaces, in particular alloyed steel, preferably Inconel, or an alloy comprising a constituent selected from the group consisting of molybdenum, titanium, chromium, nickel , Tungsten or mixtures thereof, in question.
- the dimension of the support can be chosen within wide ranges and depends on the orders of magnitude of the metallized ceramic substrates to be produced and the bonding furnaces used. Suitable dimensions of the carrier are between 20 x 20 mm and 300 x 350 mm, wherein the shape of the carrier is preferably either substantially square or substantially rectangular.
- the bonding furnace which is generally a tunnel kiln or continuous furnace, are basically borrowed one- or multi-storey and single or multi-row structures of the carrier conceivable.
- embodiments are therefore also provided in which carriers are used which are designed for the simultaneous bonding of a plurality of arrangements. With such a combination of a plurality of mounting areas, the size described above increases according to the number of layouts. These carriers then have a plurality of support structures arranged one above the other and / or next to one another with the support and stop elements mounted thereon, on which a respective arrangement to be bonded is positioned in each case.
- a one-story construction is preferred.
- the assembly which rests on the supports of the carrier, is usually passed through the furnace at a constant transport speed and thus brought to a temperature at which joining of metal foil and ceramic substrate takes place, and subsequently after passing through the heating zones of the furnace cooled again.
- the lowest point of the carrier used in accordance with the invention can be in the transport direction both at the front and at the rear.
- the metal layer disposed on the ceramic substrate melts superficially. If, at this time, contact with other surfaces, such as the wearer or the wearer provided pads and / or stops comes, there is a possibility that there will be defects in the generated metal coating on the ceramic substrate.
- a carrier which is bonded to the surfaces in contact with the bond good, e.g. the surfaces of the supports and / or the stops, is provided with a release layer such that during the bonding, a connection of the metal layer possibly adjacent to this separation layer with the carrier or the conditions and / or attacks does not occur.
- the separating layer optionally provided on the carrier elements may comprise a material which is selected from the group consisting of oxidic, nitridic, silicidal or carbide ceramics and salts.
- the separating layer comprises a material which is selected from the group consisting of silicate, in particular alkali metal and alkaline earth metal silicates, more particularly magnesium silicate or magnesium aluminum silicate, mullite, steatite, cordierite, Al 2 O 3 , TiO 2 , ZrO 2 , MgO, CaO , Yttria, SnO 2 , CaCO 3 , BN, ZrN, graphite, zirconia-reinforced alumina (ZTA), BeO, aluminum titanate (Al 2 TiO 5 ), CaSO 4 , MgSO 4 , BaSO 4 and mixture of the aforementioned materials.
- silicate in particular alkali metal and alkaline earth metal silicates, more particularly magnesium silicate or magnesium aluminum silicate, mullite, steatite, cordierite, Al 2 O 3 , TiO 2 , ZrO 2 , MgO, CaO , Yttria, SnO 2 , CaCO 3
- the separating layer comprises a material which is selected from the group consisting of mullite, steatite, cordierite, Al 2 O 3 , ZrO 2 , MgO, Al 2 TiO 5 , SnO 2 , yttrium oxide, BaSO 4 , MgSO 4 and mixture of the aforementioned materials.
- the separating layer optionally used on the carrier elements has in particular a thickness of 10 to 1000 ⁇ m, preferably 25 to 750 ⁇ m, more preferably 50 to 500 ⁇ m, more preferably 75 to 400 ⁇ m, more preferably 100 to 350 ⁇ m. Furthermore, it is preferred if the separating layer has a porosity, ie a ratio of the pore volume to the volume of solids of greater than 10%, more preferably greater than 15%, more preferably greater than 20%.
- the particle size of the particles forming the separating layer is generally less than 50 ⁇ m, preferably less than 40 ⁇ m, more preferably less than 35 ⁇ m, more preferably less than 30 ⁇ m.
- the separating layer provided according to the invention may, for example, also be provided with a colored additive. The use of such a colored additive has the advantage that it is easy to see visually whether the release layer has a defect and is thus to be replaced if necessary.
- the colored additive may, for example, be chromium oxide.
- particles of the release layer still adhere to the metal layer, they can then be removed by a suitable method, for example by a mechanical method (eg brushing) or by a chemical method (eg, etching a thin surface layer).
- a suitable method for example by a mechanical method (eg brushing) or by a chemical method (eg, etching a thin surface layer).
- the position of the at least one support of the support according to the invention can be chosen such that in combination with a correspondingly adapted metal punching image (eg copper punching image) in the region of There is no metal (eg Kuper) in each edition.
- a metal punching image eg copper punching image
- the metal e.g., copper
- the metal is unlatched during punching / chopping so that no metal (e.g., copper) is present at the locations where the metal layer contacts the pads of the substrate (e.g., at the corners of the metal layer).
- the supports of the carrier and the metal surface during bonding can no longer bond. This is particularly important in the automation of loading and unloading at the inlet and outlet of the bonding furnace. arrangement
- the inventive method is suitable for the production of metallized ceramic substrates, which are also the subject of the present invention.
- the arrangements according to the invention may have, in addition to the at least one metal layer and the ceramic substrate, further layers, such as a solder layer.
- the ceramic substrate may, for example, be substrates of aluminum oxide, aluminum nitride, silicon nitride or silicon carbide.
- Suitable for the ceramic layer For example, an alumina ceramic (Al 2 O 3 ) with a proportion of zirconium oxide (ZrO 2 ) in the order of about 2 - 30% or an aluminum nitride ceramic, for example, with yttria as an additive, or a silicon nitride ceramic wherein the aluminum nitride ceramic and / or the silicon nitride ceramic may, for example, have an oxide surface layer, for example a surface layer of aluminum oxide.
- the thickness of the ceramic layer is preferably in the range between 0.2 and 1, 5 mm.
- the at least one metal layer on the ceramic substrate may be formed starting from metal sheets or metal foils having a thickness of generally 100 to 1000 ⁇ m, preferably 125 to 750 ⁇ m, more preferably 150 to 700 ⁇ m, more preferably 175 to 600 before the bonding step have ⁇ m.
- the metal foils or sheets can be oxidized on both sides in a known manner.
- the process according to the invention is suitable for the production of metal-ceramic substrates (MCS) and substrates which are produced by means of direct copper bonding (DCB), direct aluminum bonding (DAB) or active metal bonding (AMB).
- MCS metal-ceramic substrates
- DCB direct copper bonding
- DAB direct aluminum bonding
- AMB active metal bonding
- the resulting arrangements differ from those of the prior art in an improved positional accuracy of the metal layers and the ceramic substrate to each other and / or in an improved flatness, as well as a reduced torsion.
- the support according to the invention is used in an oven, preferably in a tunnel kiln or continuous furnace, for the production of metallized ceramic substrates, wherein the furnace, in particular the tunnel kiln or continuous furnace, for a heat treatment of treated with at least one tunnel-like furnace chamber and at least one Heating device is provided for heating the at least one furnace chamber and has a transport unit which transports the carrier according to the invention through the furnace chamber.
- the carrier may comprise at least two parts, wherein the carrier comprises at least one support for receiving the at least one metal layer and the ceramic substrate and a tool carrier. About the tool carrier, the carrier is attached to the mounted thereon at least one support with a transport unit, which allows transport of the carrier through the tunnel kiln.
- Embodiments of carriers according to the invention are also encompassed by the present invention which are designed for a plurality of substrates, for example two, three, four, five or six arrangements, wherein different arrangement possibilities of individual carriers in the oven are shown in FIG. Description of the figures
- Figure 1 shows two conventional trained as a bond boats carrier of the prior
- the substrates 1 which are already bonded on one side are fixed on carriers 2, 3 in such a way that there is no direct contact of the already bonded copper or ceramic surface with other surfaces, such as the conveyor belt, in the second bonding step. This is done, for example, by the use of carriers in which the substrates 1 bonded on one side only rest on a support at the edges 2 (see FIG. 1a) or are supported on the short sides of the substrates 1 via narrow supports 3 (see FIG ). Furthermore, the shows
- FIG. 2 shows a support 4, on which at least on one of its edge edges at least one support 13 ', 13 “, 13"', 13 “", 13 “” ', 13 “” “is provided, on which the arrangement of method step ( 1) or the bonding material 1 rests in at least one marginal portion with at least one of its outer edges and wherein in the embodiment shown here, the substantially rectangular inclined Bond-1 1 in Figure 2a is inclined over an edge 5, so that the Corner points 6 and 7 of the bonding material are located in a plane below the initial level (the zero plane) of the bonding material, in the figure 2b, the bonding material 1 on the at least one support 13 ', 13 ", 13"' , 13 “", 13 “” ', 13 “” “of the carrier 4 are inclined in total by two edges 8 and 9, so that the corner points 10 and 11 of the bonding material 1 below the initial level (the zero plane) of the bonding material.
- the illustrated arrows 12 ', 12 ", 12"' and 12 “” indicate the inclination of the bonding material 1.
- at least one stop 14 ", 14", 14 "', 14" ", 14” “' can be attached to the carrier 4 on the edge side.
- FIGS. 2c and 2d show a further embodiment in which a stop is provided at the position 16 'and 16 "which at the same time fulfills the function of a support.
- a zero level is understood to mean the plane which is spanned by the bond material in an un tilted form.
- FIG. 3 shows possible geometrical configurations of supports 13 ', 13 ", 13'",
- FIG. 5 shows an inclined arrangement, comprising at least a first metal layer and a ceramic substrate (bonding material) 1, in which the inclination of the bonding material 1 results from the illustrated angles ⁇ , ⁇ and ⁇ .
- angle ⁇ which represents a measure of the deviation of the inclined bond material 1 from the zero plane.
- the angle ⁇ in the context of the present invention can be 0.5 to 40 °, preferably 0.5 to 35 °, more preferably 0.5 to 30 °, more preferably 1 to 25 °, more preferably 1 and 5 °.
- Figure 6 shows an embodiment of a carrier 4, which is designed so that the
- Bond Good 1 is inclined, wherein the inclination of the bonding material 1 is supported by located at the corners of the substantially rectangular bonding material 1 height-adjustable feet 15 ', 15 "and 15'" is supported.
- Figure 7 shows an embodiment of a carrier 4, which is designed so that the
- FIG. 8 shows a multiplicity of possible arrangements of the carrier in the oven, in particular in a tunnel oven.
- the inventive method makes it possible to connect at least one ceramic substrate at the top and / or top and bottom in a single-stage or two-stage process run, each with a metal layer.
- a high positional accuracy of the layers is achieved to each other and achieves a reproducible improved flatness of the resulting arrangement and reduces the torsional tendency of the substrates.
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014224588.5A DE102014224588B4 (de) | 2014-12-02 | 2014-12-02 | Verfahren zum Herstellen eines plattenförmigen metallisierten Keramik-Substrats, Träger zum Herstellen des Substrats und Verwendung des Trägers |
PCT/EP2015/078185 WO2016087432A1 (fr) | 2014-12-02 | 2015-12-01 | Procédé de production de substrats céramique métallisés |
Publications (1)
Publication Number | Publication Date |
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EP3227910A1 true EP3227910A1 (fr) | 2017-10-11 |
Family
ID=54838317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP15807615.8A Withdrawn EP3227910A1 (fr) | 2014-12-02 | 2015-12-01 | Procédé de production de substrats céramique métallisés |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP3227910A1 (fr) |
CN (1) | CN107431031A (fr) |
DE (1) | DE102014224588B4 (fr) |
WO (1) | WO2016087432A1 (fr) |
Families Citing this family (1)
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HUE065731T2 (hu) | 2015-12-22 | 2024-06-28 | Heraeus Electronics Gmbh & Co Kg | Eljárás fém-kerámia szubsztrát elõállítására javított felületi felhasználással |
Citations (1)
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DE102008001224A1 (de) * | 2007-04-24 | 2008-10-30 | Ceramtec Ag | Verfahren zur Herstellung eines metallisierten Bauteils, Bauteil sowie einen Träger zur Auflage des Bauteils bei der Metallisierung |
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US3744120A (en) | 1972-04-20 | 1973-07-10 | Gen Electric | Direct bonding of metals with a metal-gas eutectic |
US3766634A (en) | 1972-04-20 | 1973-10-23 | Gen Electric | Method of direct bonding metals to non-metallic substrates |
US3994430A (en) | 1975-07-30 | 1976-11-30 | General Electric Company | Direct bonding of metals to ceramics and metals |
DE3204167A1 (de) | 1982-02-06 | 1983-08-11 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zum direkten verbinden von metallstuecken mit oxidkeramiksubstraten |
JP3223847B2 (ja) * | 1996-06-28 | 2001-10-29 | 住友金属工業株式会社 | シリコン単結晶ウェーハの熱処理方法と製造方法 |
JP2002353082A (ja) * | 2001-05-28 | 2002-12-06 | Shin Etsu Handotai Co Ltd | 貼り合わせウェーハの製造方法 |
WO2004032593A2 (fr) | 2002-10-07 | 2004-04-22 | Schott Ag | Porte-substrat mince |
DE102004033933B4 (de) * | 2004-07-08 | 2009-11-05 | Electrovac Ag | Verfahren zum Herstellen eines Metall-Keramik-Substrates |
DE102004056879B4 (de) | 2004-10-27 | 2008-12-04 | Curamik Electronics Gmbh | Verfahren zum Herstellen eines Metall-Keramik-Substrates |
JP5664949B2 (ja) * | 2008-10-07 | 2015-02-04 | ロジャース ジャーマニー ゲーエムベーハー | 金属−セラミック基板または銅−セラミック基板の製造方法および該方法で使用するための支持体 |
TW201044487A (en) * | 2009-03-30 | 2010-12-16 | Automation Tooling Syst | Systems and methods for handling wafers |
EP2360721A1 (fr) | 2010-02-23 | 2011-08-24 | Saint-Gobain Glass France | Dispositif de positionnement d'au moins deux objets, agencements, notamment agencements de corps multicouches, installation de traitement, notamment pour la sélénisation d'objets, procédé de positionnement d'au moins deux objets |
DE102010023637B4 (de) | 2010-06-14 | 2012-01-12 | Ixys Semiconductor Gmbh | Verfahren zum Herstellen von doppelseitig metallisierten Metall-Keramik-Substraten |
BE1018742A3 (nl) * | 2010-09-02 | 2011-07-05 | Oystershell Nv | Samenstelling voor de behandeling van nagelschimmelziektes en gebruik hiervan. |
BE1019301A5 (nl) * | 2011-08-31 | 2012-05-08 | Develop Mechanics Nv | Inrichting voor het hanteren van halfgeleiderwafers. |
DE102011053340A1 (de) * | 2011-09-07 | 2013-03-07 | Roth & Rau Ag | Durchlaufofen, Substratbearbeitungssystem und Verfahren zum Bearbeiten von Substraten in einem Durchlaufofen |
FR2996052B1 (fr) | 2012-09-27 | 2015-12-04 | Soitec Silicon On Insulator | Procede de collage par adhesion moleculaire |
DE102014215377B4 (de) | 2014-08-05 | 2019-11-07 | Heraeus Deutschland GmbH & Co. KG | Verfahren zum Herstellen von doppelseitig metallisierten Keramik-Substraten |
-
2014
- 2014-12-02 DE DE102014224588.5A patent/DE102014224588B4/de active Active
-
2015
- 2015-12-01 WO PCT/EP2015/078185 patent/WO2016087432A1/fr active Application Filing
- 2015-12-01 CN CN201580065913.4A patent/CN107431031A/zh active Pending
- 2015-12-01 EP EP15807615.8A patent/EP3227910A1/fr not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102008001224A1 (de) * | 2007-04-24 | 2008-10-30 | Ceramtec Ag | Verfahren zur Herstellung eines metallisierten Bauteils, Bauteil sowie einen Träger zur Auflage des Bauteils bei der Metallisierung |
Also Published As
Publication number | Publication date |
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WO2016087432A1 (fr) | 2016-06-09 |
DE102014224588B4 (de) | 2019-08-01 |
DE102014224588A1 (de) | 2016-06-02 |
CN107431031A (zh) | 2017-12-01 |
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