EP3210230A1 - Sturdy microelectromechanical switch - Google Patents
Sturdy microelectromechanical switchInfo
- Publication number
- EP3210230A1 EP3210230A1 EP15805568.1A EP15805568A EP3210230A1 EP 3210230 A1 EP3210230 A1 EP 3210230A1 EP 15805568 A EP15805568 A EP 15805568A EP 3210230 A1 EP3210230 A1 EP 3210230A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- conductive membrane
- deformable conductive
- deformable
- microelectromechanical switch
- membrane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012528 membrane Substances 0.000 claims abstract description 107
- 230000004913 activation Effects 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000001154 acute effect Effects 0.000 claims description 5
- 239000012141 concentrate Substances 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 230000003213 activating effect Effects 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 210000002105 tongue Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H51/00—Electromagnetic relays
- H01H51/22—Polarised relays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
- H01H2059/0072—Electrostatic relays; Electro-adhesion relays making use of micromechanics with stoppers or protrusions for maintaining a gap, reducing the contact area or for preventing stiction between the movable and the fixed electrode in the attracted position
Definitions
- the present invention relates to the field of microelectromechanical systems (MEMS) and relates in particular to a microelectromechanical switch.
- MEMS microelectromechanical systems
- Radio Frequency Microelectromechanical Systems are used to perform switching operations for applications addressing a wide frequency range (DC-100 GHz). Their competitive advantage in terms of performance and low power consumption in terms of their size make them a very popular component of the system.
- the present invention relates to a robust microelectromechanical switch whose structure ensures a reduced temperature sensitivity and allows a stable electrical contact with limited bonding phenomena, while ensuring the inherent performance of the RF MEMS technology.
- MEMS microelectromechanical switch
- a deformable conductive membrane in conductive connection with the signal output line, said deformable conductive membrane being suspended in a plane parallel to that of the substrate by anchors disposed on the substrate, said deformable conductive membrane comprising a contact pad opposite of the signal supply line, such that in a non-deformed state of the deformable conductive membrane, the contact pad is not in contact with the signal supply line and that in a deformed state of the deformable conductive membrane, said contact pad is in contact with the signal supply line for passing a signal from the signal supply line to the signal output line,
- an activation electrode formed on the substrate under the deformable conductive membrane, said activation electrode being intended to deform said deformable conductive membrane to make an electrical contact between the contact pad of the deformable conductive membrane and the line of deformation; signal feed, characterized by the fact that:
- the deformable conductive membrane is of rounded, flat shape, the anchors being disposed at its periphery so as to concentrate a lower stiffness in the central region of the deformable conductive membrane, with a radial opening forming an acute angle in the direction of the a signal feeding line slimming from the periphery to the center of the deformable conductive membrane, the contact pad being formed in the central region of the deformable conductive membrane so that the end of the supply line of the signal is at the right of the contact pad,
- the activation electrode has the same shape as the deformable conductive membrane, surrounding on the substrate the end of the signal supply line, and
- the space between the lower surface of the deformable conductive membrane, facing the activation electrode, and the activation electrode is an air space only.
- the end of the signal supply line is at the right of the contact pad means that the signal supply line extends slightly under the deformable conductive membrane, beyond the contact pad so that it can enter in contact with the signal supply line when the deformable conductive membrane deforms.
- the activation electrode and the deformable conductive membrane have the same shape or substantially the same shape means that the projection of the shape of the deformable conductive membrane in the plane of the substrate is identical or quasi-identical to that of the electrode. activation, with adjustments due to the fact that the activation electrode must not come into contact with the anchors or the signal line.
- the acute radial opening formed in the deformable conductive membrane makes it possible to have the minimum surface area of the signal supply line opposite the deformable conductive membrane, which makes it possible to reduce the electrical capacitance between the supply line of the signal and the conductive membrane deformable, thus ensuring good isolation of the switch.
- the acute angle may for example be between 5 ° and 135 °, preferably 50 °, without these values being limiting.
- the deformable conductive membrane thus has the form of a circular diagram with an acute sector representing the radial opening and a complementary sector representing the deformable conductive membrane.
- the activation electrode and the deformable conductive membrane have substantially the same shape and are located one above the other makes it possible to generate a maximum of attractive force.
- the contact zone "contact pad / signal supply line” is surrounded by the activation electrode by the radial opening, which allows the generation of a high localized contact force and ensures stability of the contact resistance during activation.
- the shape of the deformable conductive membrane and its thickness with regard to the maximum displacement limit the permanent deformations thereof and ensure better thermal stability.
- the surface surrounding the contact pad vis-à-vis the signal supply line is larger and therefore the area attracted by the activation electrode is larger. This feature confers a greater activation force and ensures a better stability of the electrical contact during the activation of the switch.
- an anchor is formed in the median axis of the radial opening.
- two anchors are formed symmetrically with respect to the median axis of the radial opening, on a circle of the same center as the circle circumscribing the deformable conductive membrane, the angle formed on the circle of the same center the circle circumscribing the deformable conductive membrane between each anchor and the median axis of the radial opening being at most 30 °.
- the other anchors are formed symmetrically with respect to this median axis.
- This alignment makes it possible to concentrate the weakest zone mechanically in the vicinity of the contact pad.
- At least one ear is formed on the deformable conductive membrane between two diametrically opposed anchors on a circle of the same center as the circle circumscribing the deformable conductive membrane.
- the gill (s) make it possible to accommodate deformations of the component at high temperature during the packaging, for example, but also to reduce the activation voltage of the component.
- an ear is formed on the deformable conductive membrane in the vicinity of each anchor, the openings being formed on the contour of a circle of the same center as the circle circumscribing the deformable conductive membrane and, preferably, lower radius of at least the width of the hearing.
- the orifice (s) can pass through the thickness of the deformable conductive membrane.
- the contact pad is slightly eccentric from the weakest mechanical part of the deformable conductive membrane (that is to say located at a distance from the center of the deformable conductive membrane less than 30% of the radius of the deformable conductive membrane). This position of the slightly eccentric contact pad limits the bonding phenomena.
- through holes are formed on a circle of the same center as the circle circumscribing the deformable conductive membrane.
- the hole or holes pass through the thickness of the deformable conductive membrane and promote the release process during the manufacturing step, without modifying the electrical and mechanical properties of the component.
- one or more stop pads are formed on the lower surface of the deformable conductive membrane, each stop pad being opposite a metal island electrically isolated from the activation electrode.
- the stop pads make it possible to limit the deformation of the deformable conductive membrane and to provide electrical insulation between the deformable conductive membrane and the activation electrode, which ensures a longer life of the component, and also prevents a bonding of the deformable conductive membrane on the activation electrode.
- the contact pad, and if necessary the stop pads consist of a platinum group metal or their oxides or both.
- a platinum group metal makes it possible to obtain a contact pad, if necessary stop pins, of high hardness, capable of withstanding the mechanical shocks due to the closing of the switch. Also, they ensure a better temperature resistance of the microelectromechanical switch of the invention during the passage of high currents in the contact pad, for example.
- the deformable conductive membrane is made of a multi-layer combining dielectric layers and metal layers.
- the deformable conductive membrane is made of gold, or is a metal alloy or a set of layers comprising at least one conductor.
- the activation electrode is made of gold or any other conductive or semiconducting material.
- FIG. 1 is a top view of a microelectromechanical switch according to one embodiment particular of the present invention, the activation electrode being shown in dashed lines;
- Figure 2 is a view similar to Figure 1, with the elements located under the deformable conductive membrane shown in dashed lines;
- FIG. 3 is a sectional view of the switch of Figure 1 along the line A-A ', in its rest position;
- FIG. 4 is a sectional view of the switch of Figure 1 along line A-A 'in its activated position;
- FIG. 5 shows a simulation of the deflection of the switch membrane of FIG. 1 for different temperatures, along the y axis indicated on the detail view, the simulated membrane being in gold;
- FIG. 6 shows the measurement of the evolution of the contact resistance of the switch of FIG. 1 as a function of the number of cycles, a cycle being defined as the alternation of an activation action (on state) then of quiescent (isolating state) of the switch, the switch being cycled at a frequency of 4 kHz; and
- FIG. 7 shows the measurement of the evolution of the activation voltage of the switch of FIG. 1 as a function of the number of cycles, at a frequency of 4 kHz.
- MEMS microelectromechanical switch
- the microelectromechanical switch 1 is formed on a substrate S, and mainly comprises a deformable conductive membrane 2, an activation electrode 3, a signal supply line 4 and a signal output line 5.
- the signal supply line 4, the signal output line 5 and the activation electrode are formed on the substrate S.
- the deformable conductive membrane 2 is flat, generally round in shape, with a radial opening 2a in the direction of the signal supply line 4, thinning from the periphery to the center of the deformable conductive membrane 2.
- the conductive membrane 2 is formed suspended above the activation electrode 3, by means of anchors 6, distributed at its periphery, so as to concentrate the weakest zone of stiffness of the deformable conductive membrane 2 at the level of the stud contact with the signal supply line 4 (described below) located at a distance from the apex of the radial opening less than 30% of the radius of the deformable conductive membrane 2.
- One of the anchors 6 is located in the extension of the signal supply line 4, and allows a conductive connection between the deformable conductive membrane 2 and the signal output line 5.
- the other anchors 6 are distributed in pairs, opposite to the center of the circle circumscribing the deformable conductive membrane 2. It should be noted that, although the embodiment shown has five anchors 6, the invention is not limited in this respect in the context of the present invention.
- the number of anchors is odd, one of the anchors 6 thus being located on the median axis of the radial opening 2a, in the extension of the signal supply line 4.
- Each anchor 6 is constituted by a tab extending perpendicular to the surface of the deformable conductive membrane 2, towards the substrate S, said tab extending along two tongues 6a, surrounding a block 6b integral with the substrate S, the two tabs 6a being suspended in the same plane as the deformable conductive membrane 2, ensuring optimum distribution of stresses during the rise in temperature.
- Lugs 7 are formed on the deformable conductive membrane 2, in front of each anchor 6, the louvers 7 being aligned on a circle of the same center as the circle circumscribing the deformable conductive membrane 2.
- holes 8 are formed on a smaller circle, of the same center as the circle circumscribing the deformable conductive membrane 2. These holes are optional in the context of the invention.
- the lower surface of the deformable conductive membrane 2, facing the activation electrode 3, carries a contact pad 9, in the vicinity of the apex of FIG. the opening 2a, intended, under deformation of the deformable conductive membrane 2 by the activation electrode 3, to come into contact with the end of the signal supply line 4.
- Stop pads 10, formed substantially on the same circles as the holes 8 and the openings 7, are formed on the lower surface of the conductive membrane deformable 2, their role being described in more detail below.
- the activation electrode 3 has substantially the same shape as the deformable conductive membrane 2, and surrounds the end of the signal supply line 4.
- islands 3a electrically isolated from the rest of the activation electrode, are formed at the right of the stop pads 10.
- the role of the locking studs 10 and the islands 3a is to allow, during the deformation of the deformable conductive membrane 2 attracted by the activation electrode, to limit the deformation of the deformable conductive membrane 2 by contact with the pads. stop 10 on islands 3a. Although the presence of the islands 3a and stop pads 10 is preferred because limiting the deformation of the deformable conductive membrane 2 and electrically isolating them, a switch not presenting them also falls within the scope of this invention, which is not limited in this respect.
- the substantially identical shapes of the deformable conductive membrane 2 and the activation electrode 3 make it possible to guarantee homogeneous and uniform deformation while ensuring the generation of a high electrostatic force.
- the general shape of the microelectromechanical switch 1 according to the invention makes it possible to guarantee a large contact force, located in the center of the circle because of the position of the anchors and the shape of the membrane, which guarantees an electrically stable contact with the end of the signal supply line 4.
- the opening 2a also makes it possible to limit the area of the deformable conductive membrane 2 facing the current supply line 4, which reduces the electrical couplings between them.
- FIGS 3 and 4 illustrate the two positions, respectively open and closed, microelectromechanical switch 1 according to the invention.
- an air gap can be observed between the deformable conductive membrane 2 and the activation electrode 4.
- the microelectromechanical switch 1 is open, the signal does not pass between the signal supply line 4 and the signal output line 5.
- the substrate is advantageously silicon.
- the activation electrode is advantageously gold, but may also be any other conductive or semi-conductive material.
- the deformable conductive membrane 2 is advantageously made of gold, but may also be a metal alloy or a set of layers comprising at least one conductor.
- the contact pads 9 and stop 10 are formed integrally with the deformable conductive membrane 2. They can advantageously be covered with a harder material to increase their resistance.
- a switch according to the invention is inscribed in a circle of radius 140 ⁇ .
- the thickness of the switch is 7 ⁇
- its lowering voltage is 55V
- its restoring force is 1.8 mN
- its contact force is between 2 and 4 mN at 70 V .
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Micromachines (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1460104A FR3027448B1 (en) | 2014-10-21 | 2014-10-21 | ROBUST MICROELECTROMECHANICAL SWITCH |
PCT/FR2015/052802 WO2016062956A1 (en) | 2014-10-21 | 2015-10-19 | Sturdy microelectromechanical switch |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3210230A1 true EP3210230A1 (en) | 2017-08-30 |
EP3210230B1 EP3210230B1 (en) | 2020-12-30 |
Family
ID=52627301
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP15805568.1A Active EP3210230B1 (en) | 2014-10-21 | 2015-10-19 | Sturdy microelectromechanical switch |
Country Status (7)
Country | Link |
---|---|
US (1) | US10121623B2 (en) |
EP (1) | EP3210230B1 (en) |
CN (1) | CN107078000B (en) |
ES (1) | ES2863098T3 (en) |
FR (1) | FR3027448B1 (en) |
IL (1) | IL251793B (en) |
WO (1) | WO2016062956A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3051784B1 (en) | 2016-05-24 | 2018-05-25 | Airmems | MEMS MEMBRANE WITH INTEGRATED TRANSMISSION LINE |
FR3074793B1 (en) * | 2017-12-12 | 2021-07-16 | Commissariat Energie Atomique | MICROELECTROMECHANICAL AND / OR NANOELECTROMECHANICAL DEVICE OFFERING INCREASED ROBUSTNESS |
FR3098340B1 (en) * | 2019-07-03 | 2022-03-25 | Airmems | POWER SWITCH, HIGH FREQUENCY BROADBAND AND DEVICE INTEGRATING POWER SWITCHES |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5619061A (en) * | 1993-07-27 | 1997-04-08 | Texas Instruments Incorporated | Micromechanical microwave switching |
US6707355B1 (en) * | 2001-06-29 | 2004-03-16 | Teravicta Technologies, Inc. | Gradually-actuating micromechanical device |
WO2003028059A1 (en) * | 2001-09-21 | 2003-04-03 | Hrl Laboratories, Llc | Mems switches and methods of making same |
US6717496B2 (en) * | 2001-11-13 | 2004-04-06 | The Board Of Trustees Of The University Of Illinois | Electromagnetic energy controlled low actuation voltage microelectromechanical switch |
US6876282B2 (en) * | 2002-05-17 | 2005-04-05 | International Business Machines Corporation | Micro-electro-mechanical RF switch |
US6639494B1 (en) * | 2002-12-18 | 2003-10-28 | Northrop Grumman Corporation | Microelectromechanical RF switch |
KR100554468B1 (en) * | 2003-12-26 | 2006-03-03 | 한국전자통신연구원 | Self-sustaining center-anchor microelectromechanical switch and method of fabricating the same |
US7373717B2 (en) * | 2004-03-16 | 2008-05-20 | Electronics And Telecommunications Research Institute | Method of manufacturing a self-sustaining center-anchor microelectromechanical switch |
US20050225412A1 (en) * | 2004-03-31 | 2005-10-13 | Limcangco Naomi O | Microelectromechanical switch with an arc reduction environment |
US20050248424A1 (en) * | 2004-05-07 | 2005-11-10 | Tsung-Kuan Chou | Composite beam microelectromechanical system switch |
FR2871950B1 (en) * | 2004-06-22 | 2006-08-11 | Commissariat Energie Atomique | FREQUENCY FILTER AND METHOD FOR PRODUCING THE SAME |
US7119943B2 (en) | 2004-08-19 | 2006-10-10 | Teravicta Technologies, Inc. | Plate-based microelectromechanical switch having a three-fold relative arrangement of contact structures and support arms |
US7310033B2 (en) * | 2004-08-19 | 2007-12-18 | Teravicta Technologies, Inc. | MEMS switch electrode configuration to increase signal isolation |
US20070040637A1 (en) | 2005-08-19 | 2007-02-22 | Yee Ian Y K | Microelectromechanical switches having mechanically active components which are electrically isolated from components of the switch used for the transmission of signals |
US7528691B2 (en) * | 2005-08-26 | 2009-05-05 | Innovative Micro Technology | Dual substrate electrostatic MEMS switch with hermetic seal and method of manufacture |
KR100837741B1 (en) * | 2006-12-29 | 2008-06-13 | 삼성전자주식회사 | Micro switch device and method of manufacturing micro switch device |
US8093971B2 (en) * | 2008-12-22 | 2012-01-10 | General Electric Company | Micro-electromechanical system switch |
US8957485B2 (en) * | 2009-01-21 | 2015-02-17 | Cavendish Kinetics, Ltd. | Fabrication of MEMS based cantilever switches by employing a split layer cantilever deposition scheme |
US7928333B2 (en) * | 2009-08-14 | 2011-04-19 | General Electric Company | Switch structures |
JP4887466B2 (en) * | 2009-09-17 | 2012-02-29 | パナソニック株式会社 | MEMS switch and communication apparatus using the same |
US8354899B2 (en) * | 2009-09-23 | 2013-01-15 | General Electric Company | Switch structure and method |
FR2963784B1 (en) * | 2010-08-11 | 2012-08-31 | Univ Limoges | ELECTROMECHANICAL MICROSYSTEMS WITH AIR GAPS. |
-
2014
- 2014-10-21 FR FR1460104A patent/FR3027448B1/en active Active
-
2015
- 2015-10-19 US US15/520,667 patent/US10121623B2/en active Active
- 2015-10-19 EP EP15805568.1A patent/EP3210230B1/en active Active
- 2015-10-19 CN CN201580057186.7A patent/CN107078000B/en active Active
- 2015-10-19 WO PCT/FR2015/052802 patent/WO2016062956A1/en active Application Filing
- 2015-10-19 ES ES15805568T patent/ES2863098T3/en active Active
-
2017
- 2017-04-19 IL IL251793A patent/IL251793B/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
ES2863098T3 (en) | 2021-10-08 |
FR3027448B1 (en) | 2016-10-28 |
CN107078000A (en) | 2017-08-18 |
WO2016062956A1 (en) | 2016-04-28 |
US10121623B2 (en) | 2018-11-06 |
FR3027448A1 (en) | 2016-04-22 |
US20170316907A1 (en) | 2017-11-02 |
IL251793A0 (en) | 2017-06-29 |
EP3210230B1 (en) | 2020-12-30 |
CN107078000B (en) | 2019-06-18 |
IL251793B (en) | 2021-02-28 |
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