EP1565922A1 - Electrostatic microswitch for low-voltage-actuation components - Google Patents

Electrostatic microswitch for low-voltage-actuation components

Info

Publication number
EP1565922A1
EP1565922A1 EP03786074A EP03786074A EP1565922A1 EP 1565922 A1 EP1565922 A1 EP 1565922A1 EP 03786074 A EP03786074 A EP 03786074A EP 03786074 A EP03786074 A EP 03786074A EP 1565922 A1 EP1565922 A1 EP 1565922A1
Authority
EP
European Patent Office
Prior art keywords
electrodes
deformable means
electrostatic
support
micro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP03786074A
Other languages
German (de)
French (fr)
Other versions
EP1565922B1 (en
Inventor
Philippe Robert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of EP1565922A1 publication Critical patent/EP1565922A1/en
Application granted granted Critical
Publication of EP1565922B1 publication Critical patent/EP1565922B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H01H2059/0063—Electrostatic relays; Electro-adhesion relays making use of micromechanics with stepped actuation, e.g. actuation voltages applied to different sets of electrodes at different times or different spring constants during actuation

Definitions

  • microswitch with high operating reliability and suitable for components with low actuation voltage.
  • microswitch includes micro-relays, MEMS type actuators (for "Micro-Electro-Mechanical-System) and high frequency actuators.
  • Microswitches are very widely used in the field of communications: in the signal routing, networks of tuning of dependencies, gain adjustment of amplifiers, etc. With regard to the frequency bands of the signals to be switched, these frequencies are between a few MHz and several tens of GHz .
  • MEMS switches Conventionally, for these RF circuits, switches from microelectronics are used, which allow integration with the electronics of the circuits and which have a low manufacturing cost. In terms of performance, these components are however quite limited. Thus, silicon FET switches can switch high power signals at low frequency but not at high frequency. GaAs MESFET switches or PIN diodes work well at high frequencies but only for low level signals. Finally, in general, beyond 1 GHz, all these micro-electronic switches exhibit a significant insertion loss (conventionally around 1 to 2 dB) in the on state and a fairly low insulation in the state open (-20 to -25 dB). The replacement of conventional components by MEMS microswitches is therefore promising for this type of application. By design and operating principle, MEMS switches have the following characteristics:
  • the other type of contact is the capacitive switch described in the article "RF MEMS From a device perspective" by J. Jason Yao cited above and in the article “Finite Ground Coplanar aveguide Shunt MEMS Switches for Switched Line Phase Shifters”by George E. Ponchak et al., published in 30th European Microwave Conference, Paris 2000, pages 252 to 254.
  • an air layer is adjusted electromechanically to obtain a variation in capacity between the closed state and open state.
  • This type of contact is particularly well suited to high frequencies (above 10 GHz) but inadequate at low frequencies.
  • thermal actuated switches and electrostatic actuated switches. • the thermal operation switches have the advantage of a low actuation voltage. However, they have the following drawbacks: excessive consumption (especially in the case of mobile phone applications), low switching speed (due to thermal inertia) and often heavy technology.
  • Electrostatic switches have the advantages of fast switching speed and generally simple technology. On the other hand, they have the disadvantage due to reliability problems. This point is particularly sensitive in the case of electrostatic microswitches with low actuation voltage (possibility of bonding of the structures). Indeed, because of the configuration of the state-of-the-art electrostatic actuation microswitches, the dimensioning of this type of component to have a low actuation voltage
  • micro-switch which is distinguished from the state of the art by its operating mode and its design. It has in fact two distinct sets of actuation electrodes and uses a two-stage actuation mode which allows it to reconcile both a low actuation voltage and a low switching time while retaining the mechanical stiffness of the microswitch in high operation.
  • the subject of the invention is therefore an electrostatic microswitch intended to electrically connect at least two electrically conductive tracks arranged on a support, the electrical connection between the two conductive tracks being made by means of a contact pad provided on deformable means. made of insulating material and able to deform relative to the support under the action of a electrostatic force generated by control electrodes, the contact pad making the electrical connection of the ends of the two conductive tracks when the deformable means are sufficiently deformed, characterized in that the control electrodes are distributed over the deformable means and the support in two sets of electrodes, a first set of electrodes intended for the generation of a first electrostatic force to initiate the deformation of the deformable means, a second set of electrodes intended for the generation of a second electrostatic force to continue the deformation of the deformable means so that the contact pad electrically connects the ends of the two conductive tracks.
  • control electrodes distributed over the deformable means can be arranged thereon so that the deformable means are interposed between them and the control electrodes distributed over the support.
  • control electrodes distributed on the support comprise two electrodes which are each a common electrode for the first set of electrodes and for the second set of electrodes.
  • the deformable means may include a beam embedded at its two ends or a cantilever beam.
  • the control electrodes distributed over the deformable means may comprise electrodes from one of the two sets of electrodes arranged on annexed parts attached to the beam and arranged on each side of the beam.
  • the control electrodes distributed over the deformable means may comprise electrodes from the other of the two sets of electrodes arranged on the beam and arranged on each side of the contact pad.
  • FIG. 1 is a top view of an electrostatic microswitch according to the present invention
  • FIG. 2 is a sectional view along the axis II-II of FIG. 1,
  • FIG. 3 is a sectional view along the axis III-III of FIG. 1
  • FIGS. 4 and 5 are explanatory views of the operation of the micro-switch of the invention, corresponding to FIG. 2,
  • FIGS. 6A to 6G are sectional views illustrating a method of producing a microswitch according to the present invention.
  • Figure 1 is a top view of an electrostatic microswitch according to the present invention.
  • the microswitch is produced on the surface of an insulating substrate.
  • the surface is provided with a recess 1 delimited by edges 2, 12, 22 and 32 overhanging it.
  • a beam 3 is formed above 1 * recess 1 by having a first end secured to the edge 22 and a second end secured to the edge 32. It is therefore a beam embedded at its two ends.
  • the beam 3 is provided with two annexed parts or fins 13 and 23 located at the same level as the beam 3.
  • the fins 13 and 23 are located on either side of the beam 3. They are attached to the beam by a part narrowed central. They are attached to edges 2 and 12 by lateral narrowed parts.
  • the electrically conductive tracks to be connected are referenced 4 and 5. They have ends, respectively 14 and 15, arranged under the beam 3 and aligned along the longitudinal axis of the beam 3, facing each other.
  • the bottom of the recess 1 supports two lower electrodes 101 and 102 which can be respectively electrically connected by the contact pads 111 and 112.
  • the electrodes 101 and 102 are arranged symmetrically with respect to the longitudinal axis of the beam 3.
  • L ' electrode 101 is located opposite a first lateral part of the beam 3 and opposite the fin 13.
  • the electrode 102 is located opposite a second lateral part of the beam 3 and opposite the fin 23.
  • the beam 3 supports several electrical conductors: a contact pad 6 and two electrodes 7 and 8.
  • the contact pad 6 is located along the longitudinal axis of the beam 3 and extends to above the ends 14 and 15 conductive tracks 4 and 5.
  • the contact pad 6 protrudes from the underside of the beam 3 or flows at this underside so as to be able to electrically connect the ends 14 and 15 if the beam 3 is sufficiently deformed.
  • the electrodes 7 and 8 are located on the face of the beam 3 opposite the recess. Each is located on a lateral part of the beam so that the electrode 7 is located opposite the corresponding part of the lower electrode 101 and that the electrode 8 is located opposite the corresponding part of the lower electrode 102.
  • the electrodes 7 and 8 can be respectively electrically connected by the contact pads 17 and 18.
  • the fin 13 supports on its upper face, that is to say the face opposite to the recess, an electrode 33 which can be electrically connected by a contact pad 43.
  • the electrode 33 is located opposite a part of the lower electrode 101.
  • the fin 23 supports on its upper face an electrode 53 which can be electrically connected by a contact pad 63.
  • the electrode 53 is located opposite a part of the lower electrode 102.
  • Figure 2 is a sectional view along the axis II-II of Figure 1 and Figure 3 is a sectional view along the axis III-III of Figure 1. These figures show the undeflected state of the beam 3 in the absence of potentials applied to the electrodes.
  • FIGS 4 and 5 are explanatory views of the operation of the microswitch. These views correspond to the section shown in Figure 2.
  • a voltage VI is firstly applied to the first set of electrodes constituted by the electrodes 33 and 53 on the one hand and by the electrodes 101 and 102 on the other hand.
  • the voltage VI voltage for initiating the deformation, is chosen to press the center of the beam on the lower electrodes 101 and 102 as shown in FIG. 4. In the case of a cantilevered beam or cantilever, this first set of electrodes would have the function of pressing the end of the beam on the lower electrodes.
  • the application of the voltage VI to the first set of electrodes places the microswitch in operation but in the non-switched state, the ends 14 and 15 of the conductive tracks being sufficiently distant from each other so that a mechanical contact of the beam is obtained without electrical contact.
  • This displacement of the beam being activated only to initiate the switch (for example when switching on a mobile telephone), the damping brought by the large area of these electrodes has no consequence on the switching time of the switch in operation.
  • This first set of electrodes has a sufficient surface to allow the beam to be abutted for a voltage less than 10 V, or even less than 5V.
  • a voltage V2 is then applied to the second set of electrodes constituted by the electrodes 7 and 8 on the one hand and by the electrodes 101 and 102 on the other hand.
  • the voltage V2, switching voltage is chosen to deform the beam 3 until the ends 14 and 15 are brought into contact with the contact pad 6 of the beam as shown in FIG. 5.
  • the proximity of the electrodes in look at the second set of electrodes due to the bending of the beam during the initiation of the deformation, makes it possible to actuate the microswitch with a low voltage while retaining a high beam stiffness.
  • the arrangement and the number of electrodes can be variable.
  • One or more electrodes can constitute the beam.
  • the deformation of the beam under the effect of an initiating voltage makes it possible to very greatly reduce the holding voltage of the deformed beam during switching.
  • the invention provides great stability and reliability of the microswitch in operation. This is due to the significant mechanical stiffness of the microswitch in operation, that is to say after the initiation of the deformation. This results in a very low sensitivity to shocks and accelerations during operation, as well as to the possible effects of charge trapping in the dielectric layer.
  • the switching time is reduced, given the small displacement of the beam between the non-switched position and the switched position (limited air movement therefore limited damping).
  • the high frequency isolation is optimized because of the great distance of the two tracks to be connected.
  • Another advantage of the invention consists in the manufacture of this micro-switch according to a technique compatible with the technique of manufacturing integrated circuits.
  • the device of the invention differs from microswitches of the prior art by the following characteristics.
  • the actuation voltage is low while retaining low sensitivity to acceleration, high operating reliability, low switching and mechanical relaxation time.
  • the two-stage operating mode also distinguishes the device according to the invention from the microswitches of the prior art.
  • the initiation phase of the deformation is carried out with a low actuation voltage and without strong constraint on the response time, the risk of electrostatic sticking and the sensitivity to accelerations.
  • the switching phase is carried out at low voltage of actuation meeting the criteria of low sensitivity to acceleration, low sensitivity to the risks of electrostatic sticking and low switching time.
  • FIGS. 6A to 6G are sectional views illustrating a method for producing a microswitch according to the invention.
  • FIG. 6A shows a silicon substrate 70 covered with a deposit of silicon oxide 71 which has undergone a lithogravure operation in order to define an embedding.
  • the oxide deposit can be 2 ⁇ m thick and the depth of the etching can be 1.7 ⁇ m.
  • the etching defined a recess 72 and housings for contact pads for electrodes and conductive tracks, one of which, the housing 73 is visible.
  • a metallic deposit is then made on the engraved structure. It may be a bilayer comprising a Cr adhesion layer of 0.05 ⁇ m thick and a gold layer of 0.9 ⁇ m thickness.
  • a lithography of the metal layer present in the recess and in the stud housings is carried out in order to define the tracks to be connected and the lower ignition and switching electrodes.
  • the unprotected metal is etched to obtain the structure shown in Figure 6B.
  • the reference 74 represents a contact pad of a lower control electrode
  • the references 75 and 76 represent the ends of the conductive tracks to be connected
  • the reference 77 represents a lower control electrode.
  • FIG. 6C shows that a sacrificial layer 78, for example made of polyimide, has been deposited on the structure and planarized up to the top of the oxide layer 71.
  • FIG. 6D shows that a layer of dielectric material 79 has been deposited on the structure in order to constitute the beam. It may be a layer of Si 3 N 4 with a thickness of 0.5 ⁇ m.
  • An opening 80 is made, by lithography, in the layer 79 to define the location of the contact pad of the microswitch at the ends of tracks 75 and 76.
  • a metallic deposit is then made on the structure. It may be a layer of gold 0.5 ⁇ m thick. A lithography of this layer is carried out to define the contact pad of the conductive tracks and the upper ignition and switching electrodes. The etching of this layer makes it possible to obtain these conductive elements.
  • FIG. 6E shows the contact pad 81, a contact pad 82 of the priming electrodes (not shown), a switching electrode 83 and a contact pad 84 of a switching electrode.
  • the layer 79 is then treated by lithography to define the beam 85 with stopping the etching on the sacrificial layer 78 (see FIG. 6F).
  • the sacrificial layer is then removed by dry etching, for example of the plasma type. oxygen.
  • the structure shown in FIG. 6G is obtained.

Abstract

The invention relates to an electrostatic micro-switch intended to connect two conductor paths ( 4, 5 ) placed on a support, the connection between the two conductor paths being created by means of a contact stud ( 6 ) fitted to the distortion means ( 3 ) made in insulating material and capable of distorting in relation to the support, under the influence of an electrostatic force generated by control electrodes, the contact stud connecting the ends ( 14, 15 ) of the two conductor paths ( 4, 5 ) when the distortion means are sufficiently distorted. The control electrodes are laid out on the distortion means and the support in two sets of electrodes, a first set of electrodes ( 101, 102, 33, 53 ) intended to generate a first electrostatic force to initiate the distorting of the distortion means, a second set of electrodes ( 101, 102, 7, 8 ) intended to generate a second electrostatic force to continue the distorting of the distortion means ( 3 ) so that the contact stud ( 6 ) connects the ends ( 14, 15 ) of the two conductor paths.

Description

MICRO-COMMUTATEUR ELECTROSTATIQUE POUR COMPOSANTS A FAIBLE TENSION D'ACTIONNEMENT ELECTROSTATIC MICRO SWITCH FOR LOW ACTUATION VOLTAGE COMPONENTS
DESCRIPTIONDESCRIPTION
DOMAINE TECHNIQUETECHNICAL AREA
L'invention concerne un micro-commutateur électrostatique à grande fiabilité de fonctionnement et adapté aux composants à faible tension d'actionnement. Sous le terme de micro-commutateur, on inclut les micro-relais, les actionneurs de type MEMS (pour "Micro-Electro-Mechanical-System) et les actionneurs haute fréquence.The invention relates to an electrostatic microswitch with high operating reliability and suitable for components with low actuation voltage. The term microswitch includes micro-relays, MEMS type actuators (for "Micro-Electro-Mechanical-System) and high frequency actuators.
ETAT DE LA TECHNIQUE ANTERIEURE L'article "RF MEMS from a device perspective" de J. Jason Yao, paru dans J. Micromech. Microeng. 10(2000), pages R9 à R38, récapitule les progrès récents accomplis dans le domaine des MEMS pour des applications haute fréquence. Les composants haute fréquence ou RF pour la téléphonie mobile se voient imposer le cahier des charges suivants :STATE OF THE PRIOR ART The article "RF MEMS from a device perspective" by J. Jason Yao, published in J. Micromech. Microeng. 10 (2000), pages R9 to R38, summarizes the recent progress made in the field of MEMS for high frequency applications. The high frequency or RF components for mobile telephony are subject to the following specifications:
- tension d'alimentation inférieure à 5 V,- supply voltage lower than 5 V,
- isolation supérieure à 30 dB, - perte d'insertion inférieure à 0,3 dB, fiabilité pour un nombre de cycles supérieur à 109,- insulation greater than 30 dB, - insertion loss less than 0.3 dB, reliability for a number of cycles greater than 10 9 ,
- dimensions inférieures à 0,05 mm2.- dimensions less than 0.05 mm 2 .
Les micro-commutateurs sont très largement utilisés dans le domaine des communications : dans le routage des signaux, les réseaux d'accord d'imdépances, l'ajustage de gain d'amplificateurs, etc.. En ce qui concerne les bandes de fréquences des signaux à commuter, ces fréquences sont comprises entre quelques MHz et plusieurs dizaines de GHz.Microswitches are very widely used in the field of communications: in the signal routing, networks of tuning of dependencies, gain adjustment of amplifiers, etc. With regard to the frequency bands of the signals to be switched, these frequencies are between a few MHz and several tens of GHz .
Classiquement, pour ces circuits RF, on utilise des commutateurs issus de la microélectronique, qui permettent une intégration avec l'électronique des circuits et qui ont un faible coût de fabrication. En termes de performances, ces composants sont par contre assez limités. Ainsi, des commutateurs de type FET en silicium peuvent commuter des signaux de forte puissance à basse fréquence mais pas à haute fréquence. Les commutateurs de type MESFET en GaAs ou les diodes PIN fonctionnent bien à haute fréquence mais uniquement pour des signaux de faibles niveaux. Enfin, d'une manière générale, au delà de 1 GHz, tous ces commutateurs micro-électroniques présentent une perte d'insertion importante (classiquement autour de 1 à 2 dB) à l'état passant et une isolation assez faible à l'état ouvert (-20 à -25 dB) . Le remplacement de composants conventionnels par des micro-commutateurs MEMS est par conséquent prometteur pour ce type d'application. De par leur conception et leur principe de fonctionnement, les commutateurs MEMS présentent les caractéristiques suivantes :Conventionally, for these RF circuits, switches from microelectronics are used, which allow integration with the electronics of the circuits and which have a low manufacturing cost. In terms of performance, these components are however quite limited. Thus, silicon FET switches can switch high power signals at low frequency but not at high frequency. GaAs MESFET switches or PIN diodes work well at high frequencies but only for low level signals. Finally, in general, beyond 1 GHz, all these micro-electronic switches exhibit a significant insertion loss (conventionally around 1 to 2 dB) in the on state and a fairly low insulation in the state open (-20 to -25 dB). The replacement of conventional components by MEMS microswitches is therefore promising for this type of application. By design and operating principle, MEMS switches have the following characteristics:
- faibles pertes d'insertion (typiquement inférieures à 0,3 dB) , - isolation importante du MHz au millimétrique (typiquement supérieure à -30 dB) , - faible consommation,- low insertion losses (typically less than 0.3 dB), - significant isolation from MHz to millimeter (typically greater than -30 dB), - low consumption,
- pas de non-linéarité de réponse.- no non-linearity of response.
On distingue deux types de contact pour ces micro-commutateurs MEMS . L'un de ces types de contact est le commutateur à contact ohmique décrit dans l'article "RF MEMS from a device perpective" de J. Jason Yao cité ci- dessus et dans l'article "A Surface Micromachined Miniature Switch For Télécommunications Applications with Signal Frequencies From DC up to 4 GHz" de J. Jason Yao et M. Franck Chang, paru dans la revue Transducers' 95, Eurosensors IX, pages 384 à 387. Dans ce type de contact, les deux pistes RF sont mises en contact par un court-circuit (contact métal-métal) . Ce type de contact est adapté aussi bien pour les signaux continus que pour les signaux haute fréquence (supérieure à 10 GHz) .There are two types of contact for these MEMS micro-switches. One of these types of contact is the ohmic contact switch described in the article "RF MEMS from a device perpective" by J. Jason Yao cited above and in the article "A Surface Micromachined Miniature Switch For Telecommunications Applications with Signal Frequencies From DC up to 4 GHz "by J. Jason Yao and M. Franck Chang, published in the journal Transducers' 95, Eurosensors IX, pages 384 to 387. In this type of contact, the two RF tracks are put in contact by a short circuit (metal-metal contact). This type of contact is suitable for both continuous signals and high frequency signals (greater than 10 GHz).
L'autre type de contact est le commmutateur capacitif décrit dans l'article "RF MEMS From a device perspective" de J. Jason Yao cité ci-dessus et dans l'article "Finite Ground Coplanar aveguide Shunt MEMS Switches for Switched Line Phase Shifters" de George E. Ponchak et al., paru dans 30th European Microwave Conférence, Paris 2000, pages 252 à 254. Dans ce type de contact, une couche d'air est ajustée de manière électromécanique pour obtenir une variation de capacité entre l'état fermé et l'état ouvert. Ce type de contact est particulièrement bien adapté aux hautes fréquences (supérieures à 10 GHz) mais inadéquat aux basses fréquences. Dans l'état de l'art, on distingue deux grand principes d' actionnement pour les commutateurs MEMS : les commutateurs à actionnement thermique et les commutateurs à actionnement électrostatique. Les • commutateurs à actionnement thermique présentent l'avantage d'une faible tension d' actionnement. Par contre, ils présentent les inconvénients suivants : consommation excessive (surtout dans le cas d'applications en téléphonie mobile) , vitesse de commutation faible (à cause de l'inertie thermique) et technologie souvent lourde.The other type of contact is the capacitive switch described in the article "RF MEMS From a device perspective" by J. Jason Yao cited above and in the article "Finite Ground Coplanar aveguide Shunt MEMS Switches for Switched Line Phase Shifters "by George E. Ponchak et al., published in 30th European Microwave Conference, Paris 2000, pages 252 to 254. In this type of contact, an air layer is adjusted electromechanically to obtain a variation in capacity between the closed state and open state. This type of contact is particularly well suited to high frequencies (above 10 GHz) but inadequate at low frequencies. In the state of the art, there are two main actuation principles for MEMS switches: thermal actuated switches and electrostatic actuated switches. • the thermal operation switches have the advantage of a low actuation voltage. However, they have the following drawbacks: excessive consumption (especially in the case of mobile phone applications), low switching speed (due to thermal inertia) and often heavy technology.
Les commutateurs à actionnement électrostatique présentent les avantages d'une vitesse de commutation rapide et d'une technologie généralement simple. Par contre, ils présentent l'inconvénient dû à des problèmes de fiabilité. Ce point est particulièrement sensible dans le cas de microcommutateurs électrostatiques à faible tension d' actionnement (possibilité d'un collage des structures) . En effet, à cause de la configuration des micro-commutateurs à actionnement électrostatiques de l'état de l'art, le dimensionnement de ce type de composant pour avoir une tension d' actionnement faibleElectrostatic switches have the advantages of fast switching speed and generally simple technology. On the other hand, they have the disadvantage due to reliability problems. This point is particularly sensitive in the case of electrostatic microswitches with low actuation voltage (possibility of bonding of the structures). Indeed, because of the configuration of the state-of-the-art electrostatic actuation microswitches, the dimensioning of this type of component to have a low actuation voltage
(inférieure à 10 V, voire inférieure à 5 V) implique nécessairement : soit une diminution de la raideur mécanique du composant et on observe alors une forte sensibilité du commutateur aux accélérations et aux chocs, ce qui est un problème pour les téléphones mobiles, - soit une augmentation de la surface des électrodes d' actionnement, ce qui induit alors nécessairement une augmentation de l'amortissement et donc un accroissement du temps de commutation, - soit un compromis entre ces deux paramètres.(less than 10 V, even less than 5 V) necessarily implies: either a reduction in the mechanical stiffness of the component and there is then a high sensitivity of the switch to acceleration and shock, which is a problem for mobile phones, - Either an increase in the surface of the actuation electrodes, which then necessarily induces an increase in the damping and therefore an increase in the switching time, - Or a compromise between these two parameters.
Enfin, quelle que soit l'option choisie, il en résulte une diminution sensible de la fiabilité du micro-commutateur du fait d'un risque accru de collage de la structure.Finally, whatever the option chosen, this results in a significant reduction in the reliability of the micro-switch due to an increased risk of sticking of the structure.
EXPOSE DE L'INVENTIONSTATEMENT OF THE INVENTION
Pour pallier aux inconvénients de l'art antérieur, il est proposé selon la présente invention un micro-commutateur qui se distingue de l'état de l'art par son mode de fonctionnement et sa conception. Il possède en effet deux jeux distincts d'électrodes d' actionnement et utilise un mode d' actionnement en deux temps qui lui permet de concilier à la fois une faible tension d' actionnement et un temps de commutation faible tout en conservant une raideur mécanique du micro-commutateur en fonctionnement élevée.To overcome the drawbacks of the prior art, there is proposed according to the present invention a micro-switch which is distinguished from the state of the art by its operating mode and its design. It has in fact two distinct sets of actuation electrodes and uses a two-stage actuation mode which allows it to reconcile both a low actuation voltage and a low switching time while retaining the mechanical stiffness of the microswitch in high operation.
L'invention a donc pour objet un micro- commutateur électrostatique destiné à raccorder électriquement au moins deux pistes électriquement conductrices disposées sur un support, le raccord électrique entre les deux pistes conductrices se faisant au moyen d'un plot de contact prévu sur des moyens déformables en matériau isolant et aptes à se déformer par rapport au support sous l'action d'une force électrostatique générée par des électrodes de commande, le plot de contact réalisant le raccord électrique des extrémités des deux pistes conductrices lorsque les moyens déformables sont suffisamment déformés, caractérisé en ce que les électrodes de commande sont réparties sur les moyens déformables et le support en deux jeux d'électrodes, un premier jeu d'électrodes destiné à la génération d'une première force électrostatique pour amorcer la déformation des moyens déformables, un deuxième jeu d'électrodes destiné à la génération d'une deuxième force électrostatique pour poursuivre la déformation des moyens déformables de façon que le plot de contact raccorde électriquement les extrémités des deux pistes conductrices.The subject of the invention is therefore an electrostatic microswitch intended to electrically connect at least two electrically conductive tracks arranged on a support, the electrical connection between the two conductive tracks being made by means of a contact pad provided on deformable means. made of insulating material and able to deform relative to the support under the action of a electrostatic force generated by control electrodes, the contact pad making the electrical connection of the ends of the two conductive tracks when the deformable means are sufficiently deformed, characterized in that the control electrodes are distributed over the deformable means and the support in two sets of electrodes, a first set of electrodes intended for the generation of a first electrostatic force to initiate the deformation of the deformable means, a second set of electrodes intended for the generation of a second electrostatic force to continue the deformation of the deformable means so that the contact pad electrically connects the ends of the two conductive tracks.
Les électrodes de commande réparties sur les moyens déformables peuvent être disposées sur ceux- ci de façon que les moyens déformables sont interposés entre elles et les électrodes de commande réparties sur le support.The control electrodes distributed over the deformable means can be arranged thereon so that the deformable means are interposed between them and the control electrodes distributed over the support.
Selon une variante de réalisation, les électrodes de commande réparties sur le support comprennent deux électrodes qui sont chacune une électrode commune pour le premier jeu d'électrodes et pour le deuxième jeu d'électrodes.According to an alternative embodiment, the control electrodes distributed on the support comprise two electrodes which are each a common electrode for the first set of electrodes and for the second set of electrodes.
Les moyens déformables peuvent comprendre une poutre encastrée à ses deux extrémités ou une poutre en porte-à-faux. Dans ce cas, les électrodes de commande réparties sur les moyens déformables peuvent comprendre des électrodes de l'un des deux jeux d'électrodes disposées sur des parties annexes rattachées à la poutre et agencées de chaque coté de la poutre. Dans ce cas aussi, les électrodes de commande réparties sur les moyens déformables peuvent comprendre des électrodes de l'autre des deux jeux d'électrodes disposées sur la poutre et agencées de chaque coté du plot de contact.The deformable means may include a beam embedded at its two ends or a cantilever beam. In this case, the control electrodes distributed over the deformable means may comprise electrodes from one of the two sets of electrodes arranged on annexed parts attached to the beam and arranged on each side of the beam. In this case too, the control electrodes distributed over the deformable means may comprise electrodes from the other of the two sets of electrodes arranged on the beam and arranged on each side of the contact pad.
BRÈVE DESCRIPTION DES DESSINSBRIEF DESCRIPTION OF THE DRAWINGS
L'invention sera mieux comprise et d'autres avantages et particularités apparaîtront à la lecture de la description qui va suivre, donnée à titre d'exemple non limitatif, accompagnée des dessins annexés parmi lesquels :The invention will be better understood and other advantages and features will appear on reading the description which follows, given by way of nonlimiting example, accompanied by the appended drawings among which:
- la figure 1 est une vue de dessus d'un micro-commutateur électrostatique selon la présente invention,FIG. 1 is a top view of an electrostatic microswitch according to the present invention,
- la figure 2 est une vue en coupe selon l'axe II-II de la figure 1,FIG. 2 is a sectional view along the axis II-II of FIG. 1,
- la figure 3 est une vue en coupe selon l'axe III-III de la figure 1, les figures 4 et 5 sont des vues explicatives du fonctionnement du micro-commutateur de l'invention, correspondant à la figure 2,FIG. 3 is a sectional view along the axis III-III of FIG. 1, FIGS. 4 and 5 are explanatory views of the operation of the micro-switch of the invention, corresponding to FIG. 2,
- les figures 6A à 6G sont des vues en coupe illustrant un procédé de réalisation d'un micro- commutateur selon la présente invention. DESCRIPTION DETAILLEE DE MODES DE REALISATION DE L'INVENTION- Figures 6A to 6G are sectional views illustrating a method of producing a microswitch according to the present invention. DETAILED DESCRIPTION OF EMBODIMENTS OF THE INVENTION
La figure 1 est une vue de dessus d'un micro-commutateur électrostatique selon la présente invention.Figure 1 is a top view of an electrostatic microswitch according to the present invention.
Le micro-commutateur est réalisé à la surface d'un substrat isolant. La surface est pourvue d'un évidement 1 délimité par des bords 2, 12, 22 et 32 le surplombant. Une poutre 3 est formée au-dessus de 1* évidement 1 en ayant une première extrémité solidaire du bord 22 et une deuxième extrémité solidaire du bord 32. Il s'agit donc d'une poutre encastrée à ses deux extrémités .The microswitch is produced on the surface of an insulating substrate. The surface is provided with a recess 1 delimited by edges 2, 12, 22 and 32 overhanging it. A beam 3 is formed above 1 * recess 1 by having a first end secured to the edge 22 and a second end secured to the edge 32. It is therefore a beam embedded at its two ends.
La poutre 3 est pourvue de deux parties annexes ou ailettes 13 et 23 situées au même niveau que la poutre 3. Les ailettes 13 et 23 sont situées de part et d'autre de la poutre 3. Elles sont rattachées à la poutre par une partie rétrécie centrale. Elles sont rattachées aux bords 2 et 12 par des parties rétrécies latérales.The beam 3 is provided with two annexed parts or fins 13 and 23 located at the same level as the beam 3. The fins 13 and 23 are located on either side of the beam 3. They are attached to the beam by a part narrowed central. They are attached to edges 2 and 12 by lateral narrowed parts.
Les pistes électriquement conductrices à raccorder sont référencées 4 et 5. Elles possèdent des extrémités, respectivement 14 et 15, disposées sous la poutre 3 et alignées selon l'axe longitudinal de la poutre 3, en se faisant face.The electrically conductive tracks to be connected are referenced 4 and 5. They have ends, respectively 14 and 15, arranged under the beam 3 and aligned along the longitudinal axis of the beam 3, facing each other.
Le fond de l' évidement 1 supporte deux électrodes inférieures 101 et 102 pouvant être respectivement connectées électriquement par les plots de contact 111 et 112. Les électrodes 101 et 102 sont disposées symétriquement par rapport à l'axe longitudinal de la poutre 3. L'électrode 101 se trouve en regard d'une première partie latérale de la poutre 3 et en regard de l'ailette 13. L'électrode 102 se trouve en regard d'une deuxième partie latérale de la poutre 3 et en regard de l'ailette 23. La poutre 3 supporte plusieurs conducteurs électriques : un plot de contact 6 et deux électrodes 7 et 8. Le plot de contact 6 est situé le long de l'axe longitudinal de la poutre 3 et s'étend jusqu'au-dessus des extrémités 14 et 15 des pistes conductrices 4 et 5. Le plot de contact 6 dépasse de la face inférieure de la poutre 3 ou affleuve au niveau de cette face inférieure de façon à pouvoir relier électriquement les extrémités 14 et 15 si la poutre 3 est suffisamment déformée. Les électrodes 7 et 8 sont situées sur la face de la poutre 3 opposée à l' évidement. Chacune est située sur une partie latérale de la poutre de façon que l'électrode 7 soit située en regard de la partie correspondante de l'électrode inférieure 101 et que l'électrode 8 soit située en regard de la partie correspondante de l'électrode inférieure 102. Les électrodes 7 et 8 peuvent être respectivement connectées électriquement par les plots de contact 17 et 18. L'ailette 13 supporte sur sa face supérieure, c'est-à-dire la face opposée à 1* évidement, une électrode 33 pouvant être connectée électriquement par un plot de contact 43. L'électrode 33 se trouve en regard d'une partie de l'électrode inférieure 101. De même, l'ailette 23 supporte sur sa face supérieure une électrode 53 pouvant être connectée électriquement par un plot de contact 63. L'électrode 53 se trouve en regard d'une partie de l'électrode inférieure 102.The bottom of the recess 1 supports two lower electrodes 101 and 102 which can be respectively electrically connected by the contact pads 111 and 112. The electrodes 101 and 102 are arranged symmetrically with respect to the longitudinal axis of the beam 3. L ' electrode 101 is located opposite a first lateral part of the beam 3 and opposite the fin 13. The electrode 102 is located opposite a second lateral part of the beam 3 and opposite the fin 23. The beam 3 supports several electrical conductors: a contact pad 6 and two electrodes 7 and 8. The contact pad 6 is located along the longitudinal axis of the beam 3 and extends to above the ends 14 and 15 conductive tracks 4 and 5. The contact pad 6 protrudes from the underside of the beam 3 or flows at this underside so as to be able to electrically connect the ends 14 and 15 if the beam 3 is sufficiently deformed. The electrodes 7 and 8 are located on the face of the beam 3 opposite the recess. Each is located on a lateral part of the beam so that the electrode 7 is located opposite the corresponding part of the lower electrode 101 and that the electrode 8 is located opposite the corresponding part of the lower electrode 102. The electrodes 7 and 8 can be respectively electrically connected by the contact pads 17 and 18. The fin 13 supports on its upper face, that is to say the face opposite to the recess, an electrode 33 which can be electrically connected by a contact pad 43. The electrode 33 is located opposite a part of the lower electrode 101. Similarly, the fin 23 supports on its upper face an electrode 53 which can be electrically connected by a contact pad 63. The electrode 53 is located opposite a part of the lower electrode 102.
La figure 2 est une vue en coupe selon l'axe II-II de la figure 1 et la figure 3 est une vue en coupe selon l'axe III-III de la figure 1. Ces figures montrent l'état non défléchi de la poutre 3 en l'absence de potentiels appliqués sur les électrodes.Figure 2 is a sectional view along the axis II-II of Figure 1 and Figure 3 is a sectional view along the axis III-III of Figure 1. These figures show the undeflected state of the beam 3 in the absence of potentials applied to the electrodes.
Les figures 4 et 5 sont des vues explicatives du fonctionnement du micro-commutateur. Ces vues correspondent à la section représentée à la figure 2.Figures 4 and 5 are explanatory views of the operation of the microswitch. These views correspond to the section shown in Figure 2.
Une tension VI est d'abord appliquée sur le premier jeu d'électrodes constitué par les électrodes 33 et 53 d'une part et par les électrodes 101 et 102 d'autre part. La tension VI, tension d'amorçage de la déformation, est choisie pour venir plaquer le centre de la poutre sur les électrodes inférieures 101 et 102 comme le montre la figure 4. Dans le cas d'une poutre en porte-à-faux ou cantilever, ce premier jeu d'électrodes aurait pour fonction de plaquer l'extrémité de la poutre sur les électrodes inférieures .A voltage VI is firstly applied to the first set of electrodes constituted by the electrodes 33 and 53 on the one hand and by the electrodes 101 and 102 on the other hand. The voltage VI, voltage for initiating the deformation, is chosen to press the center of the beam on the lower electrodes 101 and 102 as shown in FIG. 4. In the case of a cantilevered beam or cantilever, this first set of electrodes would have the function of pressing the end of the beam on the lower electrodes.
L'application de la tension VI au premier jeu d'électrodes place le micro-commutateur en fonctionnement mais à l'état non commuté, les extrémités 14 et 15 des pistes conductrices étant suffisamment éloignées l'une de l'autre pour qu'un contact mécanique de la poutre soit obtenu sans contact électrique. Ce déplacement de la poutre n'étant activé que pour amorcer le commutateur (par exemple à la mise en route d'un téléphone portable), l'amortissement amené par la grande surface de ces électrodes n'a aucune conséquence sur le temps de commutation de l'interrupteur en fonctionnement.The application of the voltage VI to the first set of electrodes places the microswitch in operation but in the non-switched state, the ends 14 and 15 of the conductive tracks being sufficiently distant from each other so that a mechanical contact of the beam is obtained without electrical contact. This displacement of the beam being activated only to initiate the switch (for example when switching on a mobile telephone), the damping brought by the large area of these electrodes has no consequence on the switching time of the switch in operation.
Ce premier jeu d'électrodes présente une surface suffisante pour permettre la mise en butée de la poutre pour une tension inférieure à 10 V, voire inférieure à 5V.This first set of electrodes has a sufficient surface to allow the beam to be abutted for a voltage less than 10 V, or even less than 5V.
Une tension V2 est ensuite appliquée sur le deuxième jeu d'électrodes constitué par les électrodes 7 et 8 d'une part et par les électrodes 101 et 102 d'autre part. La tension V2, tension de commutation, est choisie pour déformer la poutre 3 jusqu'à la mise en contact des extrémités 14 et 15 à connecter avec le plot de contact 6 de la poutre comme le montre la figure 5. La proximité des électrodes en regard du deuxième jeu d'électrodes, due à la flexion de la poutre lors de l'amorçage de la déformation, permet d'actionner le micro-commutateur avec une faible tension tout en conservant une raideur de poutre élevée.A voltage V2 is then applied to the second set of electrodes constituted by the electrodes 7 and 8 on the one hand and by the electrodes 101 and 102 on the other hand. The voltage V2, switching voltage, is chosen to deform the beam 3 until the ends 14 and 15 are brought into contact with the contact pad 6 of the beam as shown in FIG. 5. The proximity of the electrodes in look at the second set of electrodes, due to the bending of the beam during the initiation of the deformation, makes it possible to actuate the microswitch with a low voltage while retaining a high beam stiffness.
La disposition et le nombre des électrodes peuvent être variables. Une ou plusieurs électrodes peuvent être constitutives de la poutre.The arrangement and the number of electrodes can be variable. One or more electrodes can constitute the beam.
La déformation de la poutre sous l'effet d'une tension d'amorçage permet de diminuer très fortement la tension de maintien de la poutre déformée lors de la commutation.The deformation of the beam under the effect of an initiating voltage makes it possible to very greatly reduce the holding voltage of the deformed beam during switching.
L'invention procure une grande stabilité et une grande fiabilité du micro-commutateur en fonctionnement. Ceci est dû à la raideur mécanique importante du micro-commutateur en fonctionnement, c'est-à-dire après l'amorçage de la déformation. Il en résulte une très faible sensibilité aux chocs et aux accélérations lors du fonctionnement, ainsi qu'aux effets possibles de piegeage de charges dans la couche diélectrique.The invention provides great stability and reliability of the microswitch in operation. This is due to the significant mechanical stiffness of the microswitch in operation, that is to say after the initiation of the deformation. This results in a very low sensitivity to shocks and accelerations during operation, as well as to the possible effects of charge trapping in the dielectric layer.
Le temps de commutation est réduit, étant donné le faible déplacement de la poutre entre la position non commutée et la position commutée (déplacement d'air limité donc amortissement limité). L'isolation haute fréquence est optimisée à cause de l'éloignement important des deux pistes à connecter.The switching time is reduced, given the small displacement of the beam between the non-switched position and the switched position (limited air movement therefore limited damping). The high frequency isolation is optimized because of the great distance of the two tracks to be connected.
Un autre avantage de l'invention consiste dans la fabrication de ce micro-commutateur selon une technique compatible avec la technique de fabrication des circuits intégrés.Another advantage of the invention consists in the manufacture of this micro-switch according to a technique compatible with the technique of manufacturing integrated circuits.
En termes de performance, le dispositif de l'invention se distingue des micro-commutateurs de l'art antérieur par les caractéristiques suivantes. La tension d' actionnement est faible tout en conservant une faible sensibilité aux accélérations, une grande fiabilité de fonctionnement, un temps de commutation et de relaxation mécanique faible.In terms of performance, the device of the invention differs from microswitches of the prior art by the following characteristics. The actuation voltage is low while retaining low sensitivity to acceleration, high operating reliability, low switching and mechanical relaxation time.
Le mode de fonctionnement en deux étapes distingue aussi le dispositif selon l'invention des micro-commutateurs de l'art antérieur. La phase d'amorçage de la déformation est effectuée avec une tension d' actionnement faible et sans contrainte forte sur le temps de réponse, le risque de collage électrostatique et la sensibilité aux accélérations. La phase de commutation est effectuée à faible tension d' actionnement répondant aux critères de faible sensibilité aux accélérations, de faible sensibilité aux risques de collage électrostatique et de faible temps de commutation. Les figures 6A à 6G sont des vues en coupe illustrant un procédé de réalisation d'un microcommutateur selon l'invention.The two-stage operating mode also distinguishes the device according to the invention from the microswitches of the prior art. The initiation phase of the deformation is carried out with a low actuation voltage and without strong constraint on the response time, the risk of electrostatic sticking and the sensitivity to accelerations. The switching phase is carried out at low voltage of actuation meeting the criteria of low sensitivity to acceleration, low sensitivity to the risks of electrostatic sticking and low switching time. FIGS. 6A to 6G are sectional views illustrating a method for producing a microswitch according to the invention.
La figure 6A montre un substrat de silicium 70 recouvert d'un dépôt d'oxyde de silicium 71 qui a subi une opération de lithogravure afin de définir un encastrement. Le dépôt d'oxyde peut avoir 2 μm d'épaisseur et la profondeur de la gravure peut être de 1,7 μm. La gravure a défini un évidement 72 et des logements pour plots de contact d'électrodes et pistes conductrices dont un, le logement 73 est visible.FIG. 6A shows a silicon substrate 70 covered with a deposit of silicon oxide 71 which has undergone a lithogravure operation in order to define an embedding. The oxide deposit can be 2 μm thick and the depth of the etching can be 1.7 μm. The etching defined a recess 72 and housings for contact pads for electrodes and conductive tracks, one of which, the housing 73 is visible.
Un dépôt métallique est ensuite effectué sur la structure gravée. Il peut s'agir d'un bicouche comprenant une couche d'accrochage en Cr de 0,05 μm d'épaisseur et une couche d'or de 0,9 μm d'épaisseur. On réalise une lithographie de la couche métallique présente dans l'évidement et dans les logements de plots pour définir les pistes à connecter et les électrodes d'amorçage et de commutation inférieures. Le métal non protégé est gravé pour obtenir la structure représentée à la figure 6B. Sur cette figure, la référence 74 représente un plot de contact d'une électrode de commande inférieure, les références 75 et 76 représentent les extrémités des pistes conductrices à connecter, la référence 77 représente une électrode de commande inférieure. La figure 6C montre qu'une couche sacrificielle 78, par exemple en polyimide, a été déposé sur la structure et planarisée jusqu'au sommet de la couche d'oxyde 71. La figure 6D montre qu'une couche de matériau diélectrique 79 a été déposée sur la structure afin de constituer la poutre. Il peut s'agir d'une couche de Si3N4 de 0,5 μm d'épaisseur. Une ouverture 80 est pratiquée, par lithogravure, dans la couche 79 pour définir l'emplacement du plot de contact du microcommutateur au niveau des extrémités de pistes 75 et 76.A metallic deposit is then made on the engraved structure. It may be a bilayer comprising a Cr adhesion layer of 0.05 μm thick and a gold layer of 0.9 μm thickness. A lithography of the metal layer present in the recess and in the stud housings is carried out in order to define the tracks to be connected and the lower ignition and switching electrodes. The unprotected metal is etched to obtain the structure shown in Figure 6B. In this figure, the reference 74 represents a contact pad of a lower control electrode, the references 75 and 76 represent the ends of the conductive tracks to be connected, the reference 77 represents a lower control electrode. FIG. 6C shows that a sacrificial layer 78, for example made of polyimide, has been deposited on the structure and planarized up to the top of the oxide layer 71. FIG. 6D shows that a layer of dielectric material 79 has been deposited on the structure in order to constitute the beam. It may be a layer of Si 3 N 4 with a thickness of 0.5 μm. An opening 80 is made, by lithography, in the layer 79 to define the location of the contact pad of the microswitch at the ends of tracks 75 and 76.
Un dépôt métallique est ensuite réalisé sur la structure. Il peut s'agir d'une couche d'or de 0,5μm d'épaisseur. Une lithographie de cette couche est effectuée pour définir le plot de contact des pistes conductrices et les électrodes d'amorçage et de commutation supérieures. La gravure de cette couche permet d'obtenir ces éléments conducteurs. La figure 6E montre le plot de contact 81, un plot de contact 82 des électrodes d'amorçage (non représentées), une électrode de commutation 83 et un plot de contact 84 d'une électrode de commutation.A metallic deposit is then made on the structure. It may be a layer of gold 0.5 μm thick. A lithography of this layer is carried out to define the contact pad of the conductive tracks and the upper ignition and switching electrodes. The etching of this layer makes it possible to obtain these conductive elements. FIG. 6E shows the contact pad 81, a contact pad 82 of the priming electrodes (not shown), a switching electrode 83 and a contact pad 84 of a switching electrode.
La couche 79 est ensuite traitée par lithogravure pour définir la poutre 85 avec arrêt de la gravure sur la couche sacrificielle 78 (voir la figure 6F) .The layer 79 is then treated by lithography to define the beam 85 with stopping the etching on the sacrificial layer 78 (see FIG. 6F).
La couche sacrificielle est ensuite éliminée par gravure sèche, par exemple du type plasma d'oxygène. On obtient la structure représentée à la figure 6G. The sacrificial layer is then removed by dry etching, for example of the plasma type. oxygen. The structure shown in FIG. 6G is obtained.

Claims

REVENDICATIONS
1 - Micro-commutateur électrostatique destiné à raccorder électriquement au moins deux pistes électriquement conductrices (4,5) disposées sur un support, le raccord électrique entre les deux pistes conductrices (4,5) se faisant au moyen d'un plot de contact (6) prévu sur des moyens déformables (3) en matériau isolant et aptes à se déformer par rapport au support, sous l'action d'une force électrostatique générée par des électrodes de commande, le plot de contact (6) réalisant le raccord électrique des extrémités (14,15) des deux pistes conductrices (4,5) lorsque les moyens déformables sont suffisamment déformés, caractérisé en ce que les électrodes de commande sont réparties sur les moyens déformables et le support en deux jeux d'électrodes, un premier jeu d'électrodes (101, 102, 33, 53) destiné à la génération d'une première force électrostatique pour amorcer la déformation des moyens déformables (3) , un deuxième jeu d'électrodes (101, 102, 7, 8) destiné à la génération d'une deuxième force électrostatique pour poursuivre la déformation des moyens déformables (3) de façon que le plot de contact (6) raccorde électriquement les extrémités (14, 15) des deux pistes conductrices.1 - Electrostatic micro-switch intended to electrically connect at least two electrically conductive tracks (4,5) arranged on a support, the electrical connection between the two conductive tracks (4,5) being made by means of a contact pad ( 6) provided on deformable means (3) made of insulating material and able to deform relative to the support, under the action of an electrostatic force generated by control electrodes, the contact pad (6) making the electrical connection ends (14,15) of the two conductive tracks (4,5) when the deformable means are sufficiently deformed, characterized in that the control electrodes are distributed over the deformable means and the support in two sets of electrodes, a first set of electrodes (101, 102, 33, 53) intended for the generation of a first electrostatic force to initiate the deformation of the deformable means (3), a second set of electrodes (101, 102, 7, 8) intended for the generation of a second electrostatic force to continue the deformation of the deformable means (3) so that the contact pad (6) electrically connects the ends (14, 15) of the two conductive tracks.
2 - Micro-commutateur électrostatique selon la revendication 1, caractérisé en ce que les électrodes de commande (7, 8, 33, 53) réparties sur les moyens déformables (3) sont disposées sur ceux-ci de façon que les moyens déformables sont interposés entre elles et les électrodes de commande (101, 102) réparties sur le support.2 - Electrostatic micro-switch according to claim 1, characterized in that the control electrodes (7, 8, 33, 53) distributed over the deformable means (3) are arranged thereon so that the deformable means are interposed Between they and the control electrodes (101, 102) distributed on the support.
3 - Micro-commutateur électrostatique selon la revendication 1, caractérisé en ce que les électrodes de commande réparties sur le support comprennent deux électrodes (101, 102) qui sont chacune une électrode commune pour le premier jeu d'électrodes et pour le deuxième jeu d'électrodes.3 - electrostatic microswitch according to claim 1, characterized in that the control electrodes distributed on the support comprise two electrodes (101, 102) which are each a common electrode for the first set of electrodes and for the second set of d electrodes.
4 - Micro -commutateur électrostatique selon la revendication 1, caractérisé en ce que les moyens déformables (3) comprennent une poutre encastrée à ses deux extrémités ou une poutre en porte-à-faux.4 - Electrostatic micro-switch according to claim 1, characterized in that the deformable means (3) comprise a beam embedded at its two ends or a cantilever beam.
5 - Micro-commutateur selon la revendication 4, caractérisé en ce que les électrodes de commande réparties sur les moyens déformables comprennent des électrodes (33, 53) de l'un des deux jeux d'électrodes disposées sur des parties annexes (13, 23) rattachées à la poutre (3) et agencées de chaque coté de la poutre.5 - Micro-switch according to claim 4, characterized in that the control electrodes distributed over the deformable means comprise electrodes (33, 53) of one of the two sets of electrodes arranged on annexed parts (13, 23 ) attached to the beam (3) and arranged on each side of the beam.
6 - Micro-commutateur selon la revendication 5, caractérisé en ce que les électrodes de commande réparties sur les moyens déformables comprennent des électrodes (7, 8) de l'autre des deux jeux d'électrodes disposées sur la poutre (3) et agencées de chaque coté du plot de contact (6) . 6 - Micro-switch according to claim 5, characterized in that the control electrodes distributed over the deformable means comprise electrodes (7, 8) of the other of the two sets of electrodes arranged on the beam (3) and arranged on each side of the contact pad (6).
EP03786074A 2002-11-28 2003-11-27 Electrostatic microswitch for low-voltage-actuation components Expired - Lifetime EP1565922B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0214944A FR2848020B1 (en) 2002-11-28 2002-11-28 ELECTROSTATIC MICRO-SWITCH FOR LOW ACTUATING VOLTAGE COMPONENTS
FR0214944 2002-11-28
PCT/FR2003/050138 WO2004051688A1 (en) 2002-11-28 2003-11-27 Electrostatic microswitch for low-voltage-actuation components

Publications (2)

Publication Number Publication Date
EP1565922A1 true EP1565922A1 (en) 2005-08-24
EP1565922B1 EP1565922B1 (en) 2006-08-16

Family

ID=32309783

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03786074A Expired - Lifetime EP1565922B1 (en) 2002-11-28 2003-11-27 Electrostatic microswitch for low-voltage-actuation components

Country Status (6)

Country Link
US (1) US7283023B2 (en)
EP (1) EP1565922B1 (en)
AT (1) ATE336799T1 (en)
DE (1) DE60307672T2 (en)
FR (1) FR2848020B1 (en)
WO (1) WO2004051688A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2868591B1 (en) * 2004-04-06 2006-06-09 Commissariat Energie Atomique MICROCOMMUTER WITH LOW ACTUATION VOLTAGE AND LOW CONSUMPTION
US7466215B2 (en) * 2005-08-04 2008-12-16 Wireless Mems, Inc. Balanced MEMS switch for next generation communication systems
GB0516516D0 (en) * 2005-08-11 2005-09-21 Cosmetic Warriors Ltd Incense candles
US9234979B2 (en) 2009-12-08 2016-01-12 Magna Closures Inc. Wide activation angle pinch sensor section
US8493081B2 (en) 2009-12-08 2013-07-23 Magna Closures Inc. Wide activation angle pinch sensor section and sensor hook-on attachment principle

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9309327D0 (en) * 1993-05-06 1993-06-23 Smith Charles G Bi-stable memory element
US6115231A (en) * 1997-11-25 2000-09-05 Tdk Corporation Electrostatic relay
EP1156504A3 (en) * 2000-05-16 2003-12-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Micromechanical relay with improved switching behaviour
JP2002075156A (en) * 2000-09-01 2002-03-15 Nec Corp Microswitch and manufacturing method therefor
SE0101182D0 (en) * 2001-04-02 2001-04-02 Ericsson Telefon Ab L M Micro electromechanical switches
US6608268B1 (en) * 2002-02-05 2003-08-19 Memtronics, A Division Of Cogent Solutions, Inc. Proximity micro-electro-mechanical system
US7053736B2 (en) * 2002-09-30 2006-05-30 Teravicta Technologies, Inc. Microelectromechanical device having an active opening switch

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2004051688A1 *

Also Published As

Publication number Publication date
FR2848020B1 (en) 2005-01-07
ATE336799T1 (en) 2006-09-15
DE60307672T2 (en) 2007-09-06
EP1565922B1 (en) 2006-08-16
US7283023B2 (en) 2007-10-16
DE60307672D1 (en) 2006-09-28
WO2004051688A1 (en) 2004-06-17
FR2848020A1 (en) 2004-06-04
US20060164193A1 (en) 2006-07-27

Similar Documents

Publication Publication Date Title
EP1639613B1 (en) Low power consumption bistable microswitch
EP0976101B1 (en) Hybrid device with flush-mounted contacts for generating acoustic signals, and method for making same
JP2001143595A (en) Folded spring based on micro electro-mechanical rf switch and method of manufacturing the same
JP2007535797A (en) Beam for micromachine technology (MEMS) switches
EP1562207A1 (en) Bistable microelectromechanical system
EP2022129B1 (en) Radiofrequency or hyperfrequency circulator
EP1743349B1 (en) Low consumption and low actuation voltage microswitch
FR2992467A1 (en) METHOD FOR MAKING A COMPONENT WITH A THROUGH ELECTRIC CONTACT AND COMPONENT OBTAINED
FR2833106A1 (en) Integrated circuit with electromechanical component includes cavity defined between two substrates for auxiliary component
EP1543535B1 (en) Method of manufacture of electrostatically actuated low response time power commutation micro-switches
US20170355591A1 (en) Microelectromechanical device and a method of manufacturing a microelectromechanical device
EP1438728B1 (en) Micro electro mechanical systems (mems) with variable high-ratio and low-voltage actuation micro-capacitor
EP1565922B1 (en) Electrostatic microswitch for low-voltage-actuation components
EP1565921B1 (en) Electrostatic microswitch for low-voltage-actuation component
WO2007010421A2 (en) Mems microphone and package
EP2024986B1 (en) Radiofrequency or hyperfrequency micro switch structure and method for producing one such structure
EP3465724B1 (en) Mems membrane with integrated transmission line
EP1536439B1 (en) Component comprising a variable capacitor
EP1570504B1 (en) Micro-mechanical switch and method for making same
FR2835963A1 (en) MICRO-COMPONENT OF THE MICRO-SWITCH TYPE AND METHOD FOR MANUFACTURING SUCH A MICRO-COMPONENT

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20050519

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED.

Effective date: 20060816

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060816

Ref country code: IE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060816

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060816

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060816

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060816

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060816

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060816

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060816

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

Free format text: NOT ENGLISH

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

Free format text: LANGUAGE OF EP DOCUMENT: FRENCH

REF Corresponds to:

Ref document number: 60307672

Country of ref document: DE

Date of ref document: 20060928

Kind code of ref document: P

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20061116

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20061116

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20061116

GBT Gb: translation of ep patent filed (gb section 77(6)(a)/1977)

Effective date: 20061101

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20061127

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20061130

Ref country code: MC

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20061130

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20070116

NLV1 Nl: lapsed or annulled due to failure to fulfill the requirements of art. 29p and 29m of the patents act
REG Reference to a national code

Ref country code: IE

Ref legal event code: FD4D

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20070518

BERE Be: lapsed

Owner name: COMMISSARIAT A L'ENERGIE ATOMIQUE

Effective date: 20061130

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20061117

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060816

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060816

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20071130

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20061127

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20070217

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20071130

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060816

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20101130

Year of fee payment: 8

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20101119

Year of fee payment: 8

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20101118

Year of fee payment: 8

Ref country code: IT

Payment date: 20101124

Year of fee payment: 8

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20111127

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

Effective date: 20120731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20111127

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 60307672

Country of ref document: DE

Effective date: 20120601

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20111127

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20111130

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20120601