Classifications

• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B5/00—Optical elements other than lenses
  • G02B5/20—Filters
  • G02B5/28—Interference filters
  • G02B5/285—Interference filters comprising deposited thin solid films
  • G02B5/288—Interference filters comprising deposited thin solid films comprising at least one thin film resonant cavity, e.g. in bandpass filters
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
  • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
  • G01J3/12—Generating the spectrum; Monochromators
  • G01J3/26—Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
  • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
  • G01J3/28—Investigating the spectrum
  • G01J3/2823—Imaging spectrometer
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
  • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
  • G01J3/28—Investigating the spectrum
  • G01J3/30—Measuring the intensity of spectral lines directly on the spectrum itself
  • G01J3/36—Investigating two or more bands of a spectrum by separate detectors
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B5/00—Optical elements other than lenses
  • G02B5/20—Filters
  • G02B5/201—Filters in the form of arrays
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
  • G01B2290/00—Aspects of interferometers not specifically covered by any group under G01B9/02
  • G01B2290/25—Fabry-Perot in interferometer, e.g. etalon, cavity
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
  • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
  • G01J3/28—Investigating the spectrum
  • G01J3/2823—Imaging spectrometer
  • G01J2003/2826—Multispectral imaging, e.g. filter imaging

Definitions

• the invention relates to an optical filtering device comprising interference filters with Fabry-Perot cavities, advantageously used in the field of multispectral or hyperspectral imaging.
• An image sensor conventionally comprises a matrix of filters centered on wavelengths that are different from one another.
• this filter matrix corresponds to a Bayer matrix formed by red, green and blue filters that allow the colorimetry of the scene to be reconstructed.
• These filters consist of colored resins and pixelated directly on the sensor.
• filters are also organized in matrix but are present in greater numbers (typically 5 to 10 or more), so as to detect the spectral signature of objects in a scene.
• the information rendered by this type of camera is richer and the applications are numerous in industrial vision, in the military or environmental field, for example for the detection of gas.
• the filters are not made with colored resins, in particular because it is difficult to obtain resins centered on wavelengths other than those of the red, green and blue colors, and also because the spectral responses of the resins are too wide compared to those sought for the filters of a hyperspectral camera.
• An interference filter wheel disposed in front of the sensor, and therefore not integrated therewith, is for example used in a hyperspectral camera. At each acquisition, a different filter is arranged in front of the sensor. The different acquisitions made are then combined to obtain the final image.
• the wavelength filtering can be carried out by interference filters of the Fabry-Perot type, or Fabry-Perot cavity filters.
• the principle of such filters is, for example, described in HA MacLeod's book "Thin film optical filters II I", Institute of Physics Publising, London, 2001, pages 260-263.
• a Fabry-Perot cavity comprises two semi-reflective layers, or semi-reflecting mirrors, arranged facing one another and between which there is a refractive index medium, or optical index, n, for example a layer of refractive index material n.
• the incident light is reflected by the filter for all wavelengths, except for a discrete set of wavelengths that are transmitted out of the filter.
• the optical path traveled by the light during a round trip in the Fabry-Perot cavity is a multiple of 2 ⁇ .
• these wavelengths, or central wavelengths of the spectral responses of the filters are therefore a function of the refractive index n and of a thickness d of the layer of material lying between the two semi-layers. -réflectrices.
• the central wavelengths X m a ux different orders m of the Fabry-Perot cavity are defined by the following equation:
• the layers of material lying between the semi- Reflectors are amorphous silicon or Si0 2 .
• the semi-reflective layers consist of stacks of alternating layers of amorphous silicon and Si0 2 common to all the filters.
• the lower part of the visible range ie the wavelengths between about 400 nm and 600 nm, is inaccessible for these filters because of the absorption coefficient of the amorphous silicon which is too important at these lengths. wave.
• the integration of the filters is monolithic, that is to say carried out directly on the sensor by deposition and etching steps following the steps of back-end of the sensor.
• N etching steps for 2 N filters The most economical production method in number of etching steps (N etching steps for 2 N filters) consists of performing partial etches in a same layer. However, in a collective manufacturing process (at the wafer scale), the deposition and partial etching steps are still affected by a certain degree of non-uniformity on the surface of the wafer whose diameter is equal to 200 mm. or 300 mm. The central wavelength of the spectral responses of the filters is very sensitive to the thickness of the cavity. WO 2013/064511 A1 specifies that a control of the thickness of ⁇ 2% is essential. This type of filtering device is not ideal for an industrialization requiring a collective manufacturing of the filters, in particular because the errors induced by the successive etching steps can accumulate.
• US Pat. No. 7,759,679 B2 describes a filtering device in which the wavelength tunability of the filters is achieved by varying the effective refractive index of the medium between the two semi-reflective layers of the cavity, the thickness of this medium being constant in all the filters.
• nanostructures are etched in a layer based on a first dielectric material. The etched areas are filled by a second dielectric material whose refractive index is for example less than that of the first dielectric material, and a Chemical mechanical polishing (CMP) is performed to planarize the layer comprising the nanostructures.
• CMP Chemical mechanical polishing
• the light passing through these nanostructures sees a mean refractive index, or effective refractive index, whose value is between those of the refractive indices of the two dielectric materials because the lateral dimensions of the nanostructures are smaller than the wavelengths intended to be transmitted by the filter.
• a mean refractive index or effective refractive index
• From a single mask it is possible to vary the dimensions of these nanostructures in the plane of the layer, and thus to vary the effective refractive index along this structured layer in a range between 1 refractive index of the second dielectric material and the refractive index of the first dielectric material. All the desired filters within the structured layer can thus be made with the implementation of a single step of lithography and etching.
• the method of producing this filtering device does not include partial etching and therefore does not have the drawbacks associated with making "step-by-step" filters.
• the spectral range accessible for such a filtering device is limited by the difference between the refractive indices of the materials used to produce the structured layer.
• the refractive indices of the materials used to produce the structured layer are limited by the difference between the refractive indices of the materials used to produce the structured layer.
• US 2011/0290982 A1 discloses a filtering device in which the same structuring principle is used to tune the filters by the effective refractive index of the layer of materials between the semireflective layers. Better selectivity, and in particular better rejection of the filters, is obtained thanks to the use of two Fabry-Perot cavities superimposed on each other for each of the filters.
• the volume proportions of the two materials are in this case the same as for an engraving through the entire thickness of the material for very fine patterns.
• the physical thickness of the cavity defined by the distance between the semi-reflective layers corresponding to metal layers, also remains constant.
• the spectral range accessible with this type of device is limited by the difference in index between the two dielectric materials used.
• nanostructures are made through only a portion of the thickness of the layer, it is necessary, to achieve the same wavelength ranges, to produce two nanostructured layers one on top of the other, inside each of the Fabry-Perot cavities. This increases the complexity and cost of implementation of the filtering device because each nanostructured layer requires a high resolution lithography step.
• the etching of the second nanostructured layer can degrade the first nanostructured layer with such a process by overgrafting.
• An object of the present invention is to provide an optical filtering device at least partially solving the problems of the filtering devices of the prior art discussed above.
• the present invention proposes an optical filtering device comprising at least first and second interference filters each comprising at least a first Fabry-Perot cavity formed by first and second semi-reflective layers between which at least a first structured layer is disposed, wherein: the first structured layer belongs together with the first and second interference filters, has a substantially constant thickness, is substantially planar and comprises first portions of at least two dielectric or semiconductor materials of different refractive indices arranged in each of the first Fabry-Perot cavities and in a plane parallel to the first semi-reflective layer, next to each other alternately;
• the first Fabry-Perot cavity of the second interference filter comprises at least one first spacer disposed between one of the first and second semi-reflective layers and the first structured layer such as a distance between the first and second semi-reflective layers of the first Fabry-Perot cavity of the second interference filter is greater than a distance between the first and second semi-reflective layers of the first Fabry-Perot cavity of the first interference filter;
• first and second interference filters are made according to a first configuration and / or a second configuration such that:
• the device further comprises a second structured layer disposed between the first and second semireflecting layers, belonging together with the first and second interference filters, having a substantially constant thickness, being substantially flat and having second portions of the two different refractive index materials arranged in each of the first Fabry-Perot cavities and in the plane parallel to the first semi-reflective layer, alternately side by side;
• the first and second interference filters each comprise at least one second Fabry-Perot cavity superimposed on the first Fabry-Perot cavity and formed by the first and third semi-reflective layers between which at least one third structured layer is disposed, the third structured layer belonging together with the first and second interference filters, having a substantially constant thickness, being substantially planar and having third portions of the two different refractive index materials arranged in each of the second Fabry-Perot cavities and in the plan parallel to the first semi-reflecting layer, next to one another alternately, the second Fabry-Perot cavity of the second interference filter further comprising at least a second spacer disposed between the third semi-reflective layer and the third structured layer such that a distance between the first and third semi-reflective layers of the second Fabry-Perot cavity of the second interference filter is greater than a distance between the first and third semi-reflective layers of the second Fabry-Perot cavity of the first interference filter .
• an optical filtering device comprising at least first and second interference filters each comprising at least a first Fabry-Perot cavity formed by first and second semireflective layers between which at least a first structured layer is arranged, in which :
• the first structured layer is common to the first and second interference filters
• the first structured layer has a substantially constant thickness
• the first structured layer comprises at least two different refractive index materials included in each of the first Fabry-Perot cavities
• the first Fabry-Perot cavity of the second interference filter comprises at least one first spacer disposed between one of the first and second semi-reflective layers and the first structured layer such as a distance between the first and second semi-reflective layers of the first Fabry-Perot cavity of the second interference filter is greater than a distance between the first and second semi-reflective layers of the first Fabry-Perot cavity of the first interference filter.
• structured layer refers to the fact that the layer comprises portions of the two different refractive index materials that form patterns, or patterns, within the layer.
• portions of the first of the two materials and portions of the second of the two materials are arranged, in a plane parallel to the main faces of this layer (plane which is also perpendicular to the stacking direction of the layers of the device), next to each other alternately, that is to say as a portion of the first of the two materials is disposed between at least two portions of the second of the two materials and a portion of the second of the two materials is disposed between at least two portions of the first of the two materials.
• Such structures do not correspond to roughness or superposition of layers of these two materials.
• Such structures may be viewed as transverse or vertical structures arranged next to each other in the plane parallel to the main faces of the structured layer.
• Such an optical filtering device thus proposes the production of several interference filters with Fabry-Perot cavities whose central wavelengths are defined by several parameters related to the structured layer (the values of the refractive indices of the two materials used, the parameters , such as the shape and the dimensions, the patterns formed by the two materials, the thickness of the structured layer) but also, for the second interference filter or filters, by several parameters related to the spacer present in the cavity or cavities Fabry-Perot of the second or interferential filters (refractive index of the material of the spacer, its thickness, etc.).
• the optical filtering device according to the invention is adapted to perform filtering in a wider range of wavelengths. , which may cover, for example, the visible range and the near infrared, and in particular which is not limited by the nature of the materials used for producing the structured layer, by virtue of the presence of the spacer in the second interference filter or filters .
• the optical filtering device according to the invention can be produced with a much smaller number of etching steps, without using partial etching steps.
• the optical filtering device according to the invention is therefore well suited for the collective manufacture of the scale of the substrate, or wafer, without errors induced by successive partial etching steps.
• the optical filtering device also comprises a structure adapted for integration on a sensor, for example a CMOS-type image sensor, allowing a real-time capture in the whole range of spectral responses of the interference filters of the device. optical filtering.
• a sensor for example a CMOS-type image sensor
• Each of the interference filters can transmit a single spectral band (each interference filter therefore being of the bandpass type) for example in the full range of the visible and near-infrared range, thus facilitating the processing of the captured images via a sensor provided with such a device.
• optical filtering device each interference filter therefore being of the bandpass type
• the optical filtering device can cover only the visible range, for example when the materials that can be used to form the structured layer have refractive indices of near values.
• the optical filtering device may cover at least part of the visible range and / or at least part of the infrared range (near infrared and / or medium and / or far infrared) and / or at least a portion of the UV domain.
• the second interference filter or filters may in particular perform a filtering in the infrared range, the first interference filter or filters which can be dedicated to the visible and / or UV range.
• the Fabry-Perot cavities may be arranged on a transparent substrate, for example made of glass.
• a transparent substrate may allow integration of the optical filtering device on a sensor, for example by transfer to a silicon substrate.
• the optical filtering device may comprise a single structured layer common to the first Fabry-Perot cavities of all the interferential filters of the device and located inside the first Fabry-Perot cavities.
• a single structured layer structured by Fabry-Perot cavity simplifies and reduces the cost of production compared to Fabry-Perot cavities comprising several superimposed structured layers, and also makes it possible to avoid a possible degradation of the lower structured layer when making the upper structured layer.
• the presence of the spacer in the or the second interferential filters allows the optical filtering device to cover a spectral range at least as wide as that covered by a filtering device having no spacer but using one or more superimposed structured layers.
• the device according to the invention judiciously combines several structured layers with one or more spacers within the same interference filter.
• the device When the device is made according to the first configuration, that is to say when two distinct structured layers are used within the same Fabry-Perot cavity, this facilitates the realization of the device, especially the lithography steps in front of be implemented to achieve the structured layers, compared to a device that would include interference filters performing similar filtering but which would include a single structured layer. Indeed, by distributing the structures in two superimposed structured layers, the constraints of carrying out these structures are lower than when the structuring must be performed in a single structured layer, for a given range of spectra. In addition, this superposition of structured layers makes it possible to achieve, for a given occupation area, a greater number of interference filters, and thus makes it possible to obtain a greater number of transmission peaks in the filtering spectrum of the device.
• the levels of the transmission peaks of the filtering spectrum of the device are more homogeneous, some by compared to others, compared to a filter device using only a single Fabry-Perot cavity by interference filter.
• This second configuration does not correspond to a simple superposition of several cavities
• the second spacer present in the second cavity of the second filter is judiciously disposed under the third structured layer and is arranged such that it forms a flat surface with the elements around it so that the third structured layer can be performed on this flat surface.
• the flatness of the structured third layer is found for the semi-horizontal layer. reflective common to the two superimposed cavities and thus allows then to realize the first cavity above the second cavity, again starting from a flat surface for producing the first structured layer.
• the spacer may be disposed on or under the structured layer.
• the first structured layer is advantageously continuous from one Fabry-Perot cavity to another.
• the main faces of the parts of the structured layer disposed in the different cavities are arranged in two planes only.
• the spectral responses of the interference filters can cover a large, substantially continuous spectral band (each interference filter can form a band-pass filter permitting a range of wavelengths adjacent to a range of wavelengths that another adjacent filter passes through ) or several distinct spectral bands that are not necessarily adjacent.
• the two different refractive index materials may correspond to dielectric and / or semiconductor materials. This provides better spectral selectivity compared to plasmon-based filtering devices via the use of metal layers.
• the first spacer may comprise at least one dielectric or semiconductor material.
• the first structured layer may comprise periodic patterns formed by portions of a second one of two different refractive index materials disposed in a first of two different refractive index materials.
• the first structured layer and / or the second structured layer and / or the third structured layer may comprise periodic patterns formed respectively by the first and / or second and / or third portions of a second of the two different refractive index materials. disposed in a layer of a first one of two different refractive index materials formed respectively of first and / or second and / or third portions of the first of the two different refractive index materials.
• dimension values dimensions in a principal plane of the structured layer
• a period of the periodic patterns may be less than a value of a central wavelength.
• the periodic patterns may form, in a principal plane of the first structured layer, two-dimensional structures, for example rectangular or square-shaped pads.
• the periodic patterns are well suited for filtering unpolarized light or light having two polarizations.
• the periodic patterns may form, in the main plane of the first structured layer, one-dimensional structures, for example slots extending in a single direction.
• the periodic patterns are well suited for filtering light having a single polarization.
• first and / or second and / or third portions of the second of the two different refractive index materials may be formed throughout the thickness respectively of the first structured layer and / or the second structured layer and / or or the structured third layer.
• portions of the second of the two different refractive index materials are formed in only a portion of the thickness of the first structured layer. It is the same for the second and third structured layers.
• the presence of the spacer in the second interference filter or filters makes it possible to cover a large spectral band without necessarily having to resort to two superimposed structured layers within the Fabry-Perot cavities.
• the optical filtering device may furthermore comprise at least one first etch stop layer disposed at least between one of the first and second semi-reflective layers and the first structured layer of the first Fabry-Perot cavity of the first interference filter.
• This etch stop layer may in particular make it possible to protect the structured layer during the production of the spacer which may involve a step of etching material present on the first interference filter or filters.
• This etch stop layer may have a high etching selectivity relative to that of the material forming the spacer.
• a single etch stop layer may be sufficient to ensure the integrity of the structured layer common to all of the filters. It is possible that this etch stop layer is also present at the second interference filter or filters, which simplifies the production of this etch stop layer without causing any disturbance in the filtering performed.
• the first interference filter and / or the second interference filter may comprise at least a second Fabry-Perot cavity superimposed on the first Fabry-Perot cavity.
• an interference filter comprising a single Fabry-Perot cavity
• the superposition of two Fabry-Perot cavities advantageously identical with respect to each other, makes it possible to obtain a better rejection of the filter and a spectral response whose flanks have a larger slope, and thus range of wavelengths transmitted more accurate.
• this configuration makes it possible to have a greater uniformity, in terms of maximum transmission, of the spectral responses of the interference filters over the entire range of wavelengths targeted.
• one of the two semi-reflective layers of the first Fabry-Perot cavity may also form one of the two semi-reflective layers of the second Fabry-Perot cavity.
• said second interference filter comprises a second Fabry-Perot cavity
• said second Fabry-Perot cavity may comprise at least one second spacer disposed between a third semi-reflective layer and a second structured layer of said second Fabry-Perot cavity.
• the second spacer may comprise at least one dielectric or semiconductor material.
• the first spacer and the first etch stop layer may be disposed between the first structured layer and the second semi-reflective layer, and:
• a second etch stop layer may be arranged between the first and second structured layers
• a third etch stop layer may be disposed between the third structured layer and the third semi-reflective layer.
• the optical filtering device may further comprise at least one portion of absorbent material vis-à-vis wavelengths of values less than that of a central wavelength of a spectral response of the first Fabry- cavity.
• Perot of the second interference filter for example amorphous or polycrystalline silicon, disposed on or in the first Fabry-Perot cavity of the second interference filter. This portion of material allows in this case to absorb certain wavelengths transmitted to the order 2 (or orders greater than 2) of the Fabry-Perot cavity of the second interference filter.
• the first spacer and / or the second spacer may comprise amorphous or polycrystalline silicon, which enables them to also play the role of absorbent material as described above.
• the optical filtering device may comprise a plurality of first interferential filters arranged next to each other and in which volume proportions of the two refractive index materials differ from one another in the first structured layer and / or the second structured layer and / or the third structured layer may be different from a first interference filter to another, and / or may comprise a plurality of second interferential filters arranged next to each other and in which volume proportions of the two materials of different refractive indices with respect to each other in the first structured layer and / or the second structured layer and / or the third structured layer may be different from a second interference filter to another.
• the volume proportions of the two different refractive index materials relative to one another in the second interference filter (s) may be different from the volume proportions of the two different refractive index materials relative to one another. to the other in the first interference filter or filters.
• first interference filters adapted to perform filtering in the visible range
• second interference filters adapted to perform filtering in the infrared range. It is possible to produce at least a first interference filter adapted to perform a filtering in the visible range and at least a second interference filter adapted to carry out a filtering in the infrared range, in which the volume proportions of the two signal index materials different refraction with respect to each other are similar in the first and second interference filters, the spacer or spacers alone present in the second filter for centering the second filter on a wavelength different from that on which the first filter is centered.
• the optical filtering device may comprise a total number of interference filters between 5 and 15, or between 5 and 10. Such an optical filtering device may be integrated within a hyperspectral camera.
• the interference filters of the optical filtering device can form a matrix of interference filters.
• Each semi-reflective layer may comprise at least one metallic material.
• the invention also relates to an image sensor comprising at least one optical filtering device as defined above, in which each of the first and second interference filters of the optical filtering device is disposed at one or more adjacent pixels of the optical filtering device. image sensor.
• the invention also relates to a method for producing an optical filtering device comprising at least first and second interference filters each comprising at least a first Fabry-Perot cavity, comprising at least the following steps: - Realization of a first semi-reflective layer of the first Fabry-Perot cavities;
• a first structured layer jointly belonging to the first and second interference filters having a substantially constant thickness, being substantially flat and having first portions of at least two materials, dielectric or semiconductor of different refractive indices to be arranged in each of the first Fabry-Perot cavities and in a plane parallel to the first semi-reflective layer, alternately side by side;
• a distance between the first and second semi-reflective layers of the first Fabry-Perot cavity of the second interference filter being greater than a distance between the first and second semi-reflective layers of the first Fabry-Perot cavity of the first interference filter
• first and second interference filters are made according to a first configuration and / or a second configuration such that:
• the method further comprises, between the production of the first structured layer and the production of the first spacer, the production of a second structured layer intended to be arranged between the first and second semi-reflective layers, belonging to in conjunction with the first and second interference filters, having a substantially constant thickness, being substantially planar and having second portions of the two different refractive index materials disposed in each of the first Fabry-Perot cavities and in the plane parallel to the first layer semi-reflective, side by side alternately; according to the second configuration, the method further comprises, before the production of the first semi-reflective layer, the production of at least a second Fabry-Perot cavity of each of the first and second interference filters superimposed on the first Fabry cavity.
• the third structured layer jointly belonging to the first and second interference filters, having a substantially constant thickness, being substantially flat and comprising third portions of the two different refractive index materials arranged in each of the second Fabry-Perot cavities and in the plane parallel to the first semi-reflective layer, one next to the other alternately, the second Fabry-Perot cavity; second interference filter further comprising at least one second spacer disposed between the third semi-reflective layer and the third structured layer such that a distance between the first and third semi-reflective layers of the second Fabry-Perot cavity of the second interference filter is greater than a distance between the first and third semi-reflective layers of the second Fabry-Perot cavity of the first interference filter.
• a first structured layer comprising at least two different refractive index materials intended to be included in each of the first Fabry-Perot cavities, the first structured layer being common to the first and second interference filters and having a substantially constant thickness;
• a distance between the first and second semi-reflective layers of the first Fabry-Perot cavity of the second interference filter being greater than a distance between the first and second semi-reflective layers of the first Fabry-Perot cavity of the first interference filter.
• This method makes it possible to simultaneously produce several multilayer interference filters with Fabry-Perot cavities, for example arranged in a matrix, whose resonance wavelengths cover a spectral range not limited by the indices of the materials used.
• This method has the advantage of having few delicate steps, and the total number of steps implemented remains low.
• This method can comprise only two lithography steps including one with high definition (for the realization of the structured layer), to achieve at least two filters whose spectral responses can be distributed in the complete visible and near infrared domain.
• this method makes it possible to produce more filters positioned at intermediate wavelengths, for example more than 11 interference filters.
• This method may comprise steps implemented in thin film technology.
• the realization of the first structured layer may comprise the implementation of the following steps:
• the realization of the first spacer can comprise the implementation of the following steps:
• the method may further comprise, prior to the production of the first semi-reflective layer, the production of second Fabry-Perot cavities superimposed on the first Fabry-Perot cavities.
• the realization of the second Fabry-Perot cavities may comprise the implementation of the following steps:
• first semi-reflective layer can then be made on the third structured layer.
• the realization of the second structured layer may comprise the implementation of the following steps:
• FIG. 1 and 2 show schematically an optical filtering device according to first and second embodiments
• FIG. 3 diagrammatically represents an optical filtering device, object of the present invention, according to a first embodiment
• FIG. 4 represents the spectral responses of an optical filtering device according to the first embodiment
• FIG. 5 to 10 schematically show steps of a method of producing an optical filter device according to the first embodiment
• FIG. 11 diagrammatically represents an optical filtering device, object of the present invention, according to a second embodiment
• FIG. 12 represents the spectral responses of an optical filtering device, object of the present invention, according to the second embodiment
• FIGS. 13 to 17 diagrammatically represent steps of a method for producing an optical filtering device, object of the present invention, according to the second embodiment
• FIG. 18 schematically shows an image sensor, also object of the present invention, according to a particular embodiment.
• Figure 1 shows an optical filter device 100 according to a first embodiment.
• the device 100 comprises a transparent substrate 102, comprising, for example, glass.
• a first antireflection layer 104 is disposed on the substrate 102.
• first antireflection layer 104 comprises for example a dielectric material such as SiN. Its thickness is for example equal to about 50 nm, or more generally between about 10 nm and 70 nm. The value of the thickness of the layer 104 is a function of the spectral range targeted by the device 100 and the refractive index of the layer 104. Different values, and more important than those indicated above, may be used. envisaged because the antireflection effect is periodic with the thickness of the layer 104.
• the layer 104 can be made in the form of a thin layer.
• the device 100 may not have an antireflection layer.
• Interferential filters 106 with Fabry-Perot cavities are arranged on the first antireflection layer 104.
• the six filters 106.1 - 106.6 are such that the central wavelengths of the spectral responses of these filters are different from each other, and are respectively called ⁇ . ⁇ - ⁇ . ⁇ .
• the device 100 may comprise at least two interference filters 106, and advantageously between 5 and 15 filters 106, or between 5 and 10 filters 106, or even an even greater number of filters 106.
• the number of filters 106 that comprises the device 100 depends on the number of distinct spectral responses desired in the spectral range to be processed by the device 100.
• the filters 106 are arranged next to each other along the y axis, the filters 106 of the device 100 are generally arranged in the form of a matrix of filters.
• These filters 106 comprise a first semi-reflecting layer 108, or semi-reflecting mirror, which is common here to all the filters 106.
• the first semi-reflecting layer 108 corresponds to a metal layer, comprising for example silver and whose the thickness is for example equal to about 44 nm or more generally between about 30 nm and 60 nm.
• the first anti-reflective layer 104 disposed between the substrate 102 and the first semi-reflective layer 108 makes it possible to avoid or limit light reflections on the first semi-reflective layer 108.
• the filters 106 also comprise a structured layer 110 forming part of the medium of the filters 106 located between the semi-reflective layers of the filters 106.
• This structured layer 110 is common to all the filters 106 and of thickness eN that is substantially constant for all the filters. 106.
• the structured layer 110 comprises at least two materials with different refractive indices ⁇ and,, here dielectric materials corresponding to SiN (index ⁇ ) and Si0 2 (index ne), these two materials being structured such that the different regions of the structured layer 110 present in the different filters 106 comprise different volume proportions of these two materials so that the effective refractive index of the structured layer 110 varies from one filter to another.
• the material whose refractive index ⁇ is the largest is called the first material, and here corresponds to SiN, and the one whose refractive index is the smallest is called the second material, and here corresponds to Si0 2 .
• the materials of the structured layer 110 are transparent at least with respect to the wavelengths intended to be transmitted by the filters 106.
• at least one of the first and second materials may correspond to a semiconductor material. driver.
• a region 112.1 of the structured layer 110 forming part of the filter 106.1 comprises only the second material.
• a region 112.2 of the structured layer 110 forming part of the filter 106.2 comprises the first material in which depressions 114 are made throughout the thickness of the structured layer 110 and are filled with portions of the second material, thus forming structural elements of the structured layer 110.
• these recesses 114, and therefore the portions of the second material each have a section, in a main plane of the structured layer 110, that is to say a plane parallel to the face of the structured layer 110 lying against the first semi-reflective layer 108 (parallel to the plane (X, Y) in Figure 1), rectangular or square.
• the structuration period is less than the value of the central wavelength of the spectral response of the filter 106.2.
• Structures of the structured layer 110 may have shapes other than rectangular or square, for example groove or trench shapes made on the entire length or width of the filter.
• a region 112.3 of the structured layer 110 forming part of the filter 106.3 comprises only the first material.
• 106.5 and 106.6 each comprise a region 112.4, 112.5 and 112.6 of the structured layer 110 which are here similar to the regions 112.1, 112.2 and 112.3 respectively.
• An etch stop layer 116 is disposed on the structured layer
• This etch stop layer 116 comprises a material which is etched much more slowly than the materials of the spacer 120 described below, for example AIN or TiO 2 , and which is transparent with respect to wavelengths to be transmitted by the filters 106.
• the thickness of the etch stop layer 116 is for example between about 5 nm and 10 nm. This etch stop layer 116 is present in the filtering device 100 because of the implementation method implemented and which is described below in conjunction with FIGS. 5 to 10.
• the transparent materials between the semi-reflective layers of these filters correspond to those of the regions 112.1 to 112.3 of the structured layer 110 and that of the etch stop layer 116.
• a second semi-reflective layer 118 is disposed directly on the etch stop layer 116.
• the light incident on the filters 106.1 to 106.3 is reflected between the semi-reflective layers 108 and 118 in the structured layer 110 and the etch stop layer 116.
• the height, or the thickness, of the Fabry-Perot cavities of the filters 106.1 to 106.3 formed between the two semi-reflective layers 108 and 118 is equal to the sum of the the thickness eN of the structured layer 110 and the thickness of the etch stop layer 116.
• the second semi-reflective layer 118 is not arranged directly on the etch stop layer 116 but on a spacer 120 corresponding here to a portion of dielectric material of refractive index ns and d thickness e, disposed between the etch stop layer 116 and the second semi-reflective layer 118.
• 106.6 formed between the two semi-reflective layers 108 and 118 is therefore different from that of the filters 106.1 to 106.3 due to the presence of the spacer 120, thus changing the values of the central wavelengths ⁇ 6.4 to ⁇ 6.6 spectral responses of these filters compared to those of the central wavelengths ⁇ . ⁇ to ⁇ 6.3 spectral responses of the filters 106.1 to 106.3.
• This thickness is equal to the sum of the thickness eN of the structured layer 110, the thickness of the etch stop layer 116 and the thickness e of the spacer 120.
• the material of the spacer 120 corresponds, for example, to one of the materials of the structured layer, advantageously that of the lowest index ne, or to any other dielectric or semiconductor material.
• the spacer 120 comprises a transparent material vis-à-vis the wavelengths to be transmitted by the filters 106.4 to 106.6.
• the spacer 120 comprises Si0 2 .
• the light incident on the filters 106.4 to 106.6 is reflected between the semi-reflective layers 108 and 118 in the structured layer 110, the etch stop layer 116 and the spacer 120.
• the device 100 comprises at least one filter whose height, or thickness, is different from one or more other filters of the device 100 because of the presence of the spacer 120 in this filter.
• a second antireflection layer 122 is disposed on the second semi-reflective layer 118 at all the filters 106, and makes it possible to avoid or limit the light reflections on the second semi-reflecting layer 118.
• This second antireflection layer 122 is example of thickness similar to that of the layer 104.
• Several second antireflection layers 122 may be arranged on the second semi-reflecting layer 118.
• the values of the central wavelengths of the spectral responses of the filters 106 of the device 100 are defined both by the value of the thickness of the Fabry-Perot cavities of the filters 106 which differ within the device 100, and by the value of the effective index of the medium between the semi-reflecting layers which changes from one filter to another within the device 100 thanks to the structured layer 110.
• the value of the thickness eN of the structured layer 110 is defined according to the equation (1) previously described (the stop layer 116 has little influence on the filtering performed and, for the calculations made from the equation (1), it can be considered, as a first approximation, as being absent from filters 106).
• this thickness eN can be fixed by considering the characteristics of the first filter 106.1 whose wavelength ⁇ . ⁇ has the smallest value among those of the central wavelengths of the spectral responses of the filters 106 of the filtering device 100, that is to say as a function of the values of ⁇ . ⁇ and the index of the second material which is the only one present in the region 112.1 of the structured layer 110 of the first filter 106.1.
• the value of the wavelength ⁇ 6.3 is a function of the thickness eN and the index ⁇ of the first material which is the only present in the region 112.3 of the structured layer 110 of the filter 106.3.
• the dimensions of the structures can be calculated as described in the document US 2011/0290982 A1.
• the value of the thickness es of the spacer 120 is fixed by considering the characteristics of the filter 106.4 whose wavelength ⁇ 6.4 has the smallest value among those of the central wavelengths of the spectral responses of the filters which comprise the spacer 120, that is to say according to the values of ⁇ 6.4 and the index of the second material which is the only present in the region 112.4 of the structured layer 110 of the filter 106.4, and also in function of the refractive index ns of the material of the spacer 120.
• Equation (1) previously described can be used for the calculation of this thickness es, the numerator of this equation corresponding to the sum of the optical paths in each of the layers 110 and 120, ie 2nses + 2 ⁇ (as previously, for reasons of simplification of the calculations made from equation (1), the etch stop layer 116 is considered, as a first approximation, as being absent from filters 106 due to the low impact of this layer on the filtering performed).
• the value of the wavelength Xwe.e that is to say the value of the longest central wavelength of the spectral responses among the filters which comprise the spacer 120, is a function of the thicknesses eN and es and the index ⁇ of the first material which is the only one present in the region 112.6 of the structured layer 110 of the filter 106.6 (the optical paths considered are optical paths in each of the layers 110 and 120, be 2nses + 2 ⁇ ).
• the dimensions of the structures can be calculated as described in the document US 2011 These dimensions are generally greater than the value of the central wavelength of the spectral response of the filter comprising the structures.
• the modifications of the spectral responses induced by the Fresnel reflection at the interface between the structured layer 110 and the spacer 120, and by the etch stop layer 116 in the cavities of the filters 106, are generally not significant, and can be minimized or optimally optimized by conventional multilayer stack simulation methods using software utilizing multilayer optimization algorithms based on Abeles formalism such as the needles method as described, for example, in the "Application of the needle optimization technique to the design of optical coatings" and AV Tikhonravov et al., Applied Optics, vol. 35, No. 28, 5493-5508 pages, October 1, 1996.
• the spacer 120 is disposed between the second semi-reflecting layer 118 and the structured layer 110.
• the spacer 120 may be placed between the first semi-reflecting layer 108 and the layer 110, with in this case a relief previously formed on the substrate 102, as described later with reference to FIGS. 11 to 18.
• the etch stop layer 116 is present at least at the level of the filters 106 which do not include the spacer 120. For the sake of simplification of the embodiment, the etch stop layer may be present at all the filters. 106, as is the case in the example of Figure 1.
• the etch stop layer 116 is disposed on or under the structured layer 110 according to whether the spacer 120 is disposed on or under the structured layer 110.
• the semi-reflective layers 108 and 118 preferably comprise at least one metal.
• the refractive index of a metal is complex and can be denoted n + ik.
• the metal forming the semi-reflecting layers 108 and 118 is preferably chosen such that the ratio k / n is as high as possible, for example at least equal to approximately 10, over the entire spectral range covered by the interference filters 106 in order to to obtain a good transmission of the wavelengths with the order 1 and a good rejection of the wavelengths with the higher orders, and what is the case of the money.
• the filters 106.4 to 106.6 may include a plurality of spacers 120 formed of one or more transparent materials at the wavelengths to be transmitted by the filters 106.4 - 106.6.
• the device 100 may comprise, in addition to the filters 106.1 to 106.6, other filters formed from the semi-reflective layers 108 and 118, of the structured layer 110, but which comprise one or more spacers such as the height, or the thickness, of the Fabry-Perot cavities of these filters is different from those of the filters 106.1 to 106.6.
• the device 100 may comprise several groups of filters 106 each including one (or more) spacer of different thickness and / or different material (s) (s). It is possible in particular that all the groups of filters (each group of filters corresponding to the filters having the same thickness) comprise a spacer.
• the presence of a spacer in all the filters 106 can improve the adhesion during the deposition of the second semi-reflecting layer 118 on these spacers, with respect to a deposition of the second semi-reflecting layer 118 directly on the coating layer. engraving stop 116.
• the recesses 114 are made through the entire thickness of the structured layer 110.
• the recesses 114 are made through part of the thickness of the structured layer 110.
• the first refractive index material ⁇ is also present under the portions of the second material refractive index filling the depressions 114.
• the fact that the recesses 114 pass only a part of the thickness of the structured layer 110 implies that to obtain a given effective refractive index at a region of the structured layer 110 which has these recesses (corresponding to the regions 112.2 and 112.5 in FIG. 2), the lateral dimensions of the recesses 114, ie the dimensions in the plane (X, Y), are greater than those of hollow to obtain the same refractive index effective but that would be made throughout the thickness of the structured layer 110.
• each group of filters 106 only one filter (the filter 106.2 for the group of filters not including the spacer 120, and the filter 106.5 for the group of filters comprising the spacer 120 ) has structuring. It is possible, however, that in each group of filters, several filters, or even all the filters, have structures of different dimensions in order to obtain different spectral responses.
• the device 100 comprises a single structured layer 100 common to all the filters 106 and disposed between the semi-reflective layers 108 and 118 of these filters 106.
• FIG. 3 represents the device 100 according to a first embodiment comprising ten filters 106.1 to 106.10, each of these filters having between the two semi-reflective layers 108 and 118, two parts of two structured layers 110.1 and 110.2 arranged one on the other.
• the filters 106.1 to 106.5 form the first group of filters that do not include the spacer 120, and the filters 106.6 to 106.10 form the second group of filters comprising the spacer 120.
• the filter 106.1 has regions 112.11 and 112.21 of the structured layers 110.1 and 110.2 comprising only the second material.
• the filter 106.2 comprises a region 112.12 of the first structured layer 110.1 comprising only the second material, and a region 112.22 of the second structured layer 110.2 comprising the first material in which depressions 114.2 are made through the entire thickness of the second structured layer 110.2 and are filled by the second material.
• the filter 106.3 has regions 112.13 and 112.23 of the structured layers 110.1 and 110.2 comprising the first material in which depressions 114.1 and 114.2 are made and filled by the second material.
• the filter 106.4 comprises a region 112.14 of the first structured layer 110.1 comprising only the first material, and a region 112.24 of the second structured layer 110.2 comprising the first material in which recesses 114.2 are made through the entire thickness of the second layer. structured 110.2 and are filled by the second material. Finally, the filter 106.5 has regions 112.15 and 112.25 of the structured layers 110.1 and 110.2 comprising only the first material. The regions 112.16 to 112.20 and 112.26 to 112.30 of the structured layers 110.1 and 110.2 in the filters 106.6 to 106.10 are similar to those of the filters 106.1 to 106.5.
• a first etch stop layer 116.1 is disposed on the second structured layer 110.2.
• the function of this first etch stop layer 116.1 is similar to that previously described for the etch stop layer 116.
• a second etch stop layer 116.2 having a material etching much more slowly than the first material of the second structured layer 110.2 is interposed between the structured layers 110.1 and 110.2.
• This second etch stop layer 116.2 makes it possible not to damage the first structured layer 110.1 during the production of the second structured layer 110.2, more particularly during the etching of the first material of the second structured layer 110.2.
• This second etch stop layer 116.2 comprises, for example, a material of a similar nature to that of the first etch stop layer 116.1, such as AIN or TiO 2 , and which is transparent with respect to wavelengths to be transmitted by the filters 106.
• the thickness of the second etch stop layer 116.2 is for example between about 2 nm and 10 nm.
• the method for producing the filtering device according to the first embodiment is more complex than for producing a filtering device having only one structured layer as in the first and second embodiments.
• this configuration of the filtering device with two superimposed structured layers makes it easier to perform the lithography carried out compared to that implemented when a filtering device having so many filters is produced, with similar spectral filtering ranges, but formed in a single structured layer.
• the depressions made in the structured layers 110.1 and 110.2 can be made through only a part of the thickness of these layers.
• FIG. 4 represents spectral responses (ie the value of the transmission coefficient T as a function of the wavelength, in nanometers in FIG. 4) obtained for a filtering device 100 comprising a single structured layer 110 in which the structuring is performed throughout the thickness of the structured layer 110.
• This filtering device comprises six filters 106 not including the spacer 120 and whose spectral responses correspond to the curves referenced 10, 12, 14, 16, 18 and 20, and five filters having the spacer 120 and whose spectral responses correspond to the curves referenced 22, 24, 26, 28 and 30.
• the filtering device 100 making it possible to obtain the spectral responses represented in FIG. 4 comprises the following elements:
• first antireflection layer 104 made of SiN and having a thickness equal to 50 nm;
• first semi-reflective layer 108 made of Ag and having a thickness equal to 44 nm;
• structured layer 110 having a thickness eN equal to 105 nm, the second material of which is SiO 2, the first material of which is SiN and comprising structural elements, and therefore recesses 114, of rectangular shape;
• second semi-reflective layer 118 made of Ag and of thickness equal to
• second antireflection layer 122 made of SiN and having a thickness equal to 42 nm.
• the SiN used in this filtering device is enriched in silicon, which confers on it a relatively high refractive index, close to that of Ti0 2 , with in return a certain absorption of the low wavelengths (which does not impact in the present case since the filters whose spectral response is in the blue comprise little or no SiN).
• the second antireflection layer 122 is covered with an amorphous silicon portion of thickness, for example equal to 15 nm.
• This portion of amorphous silicon makes it possible, at low wavelengths corresponding approximately to those of the blue color, to attenuate "bounces" or secondary peaks of the spectral responses of the filters comprising the spacer 120 and whose lengths of central waves are the largest. These rebounds are caused by orders higher than the order 1 of the Fabry-Perot cavities of these filters.
• the portion of amorphous silicon is transparent in the rest of the spectral domain. This portion of amorphous silicon also makes it possible, by constructive interferences, to increase the transmission of the filters at which the portion of amorphous silicon is located.
• the eleven filters of this filtering device cover a spectral band between about 450 nm and 900 nm.
• the central wavelengths of the spectral responses (order 1) are uniformly distributed in this spectral band that covers most of the visible and near-infrared spectrum.
• the six interference filters that do not include the spacer 120 and whose spectral responses correspond to the curves referenced 10, 12, 14, 16, 18 and 20 cover a first portion of this spectral band ranging from about 450 nm to about 680 nm.
• the five interference filters comprising the spacer 120 and whose spectral responses correspond to the curves referenced 22, 24, 26, 28 and 30 cover a second portion of this spectral band ranging from about 720 nm to about 900 nm.
• the relative proportions of SiO 2 and SiN in the regions of the structured layer 110 in these different filters are indicated in the table. below. In this table, the filters are identified by the value of the central wavelength of their spectral response. The widths of the SiN pads in the regions of the structured layer 110, the widths of the spaces between these pads, as well as the period of these pads, are also indicated in this table.
• FIGS. 5 to 10 represent steps of a method for producing the device 100 previously described in connection with FIG.
• the first antireflection layer 104 is first deposited on the substrate 102, then the first semi-reflective layer 108 is deposited on the first antireflection layer 104.
• a layer 124 comprising the first material and of thickness equal to the thickness eN the structured layer 110 to be made is then deposited on the first semi-reflective layer 108 ( Figure 5).
• the first semi-reflective layer 108 may be encapsulated by a thin protective layer (not shown in the figures) for avoid degradation of the metal of the first semi-reflective layer 108 by air or etching of the layer 124 made thereafter.
• Steps of lithography and etching of the layer 124 are then implemented to form the depressions 114 at the regions of the structured layer intended to include structures, and thus to remove the portions of the layer 124 at the level of the layers. regions of the structured layer 110 not intended to include the first material ( Figure 6).
• the first semi-reflective layer 108 serves as an etch stop layer during the etching of the recesses 114.
• a layer 126 comprising the second material and of thickness at least equal to the thickness eN of the structured layer 110, and generally equal to two or three times the thickness eN to facilitate the implementation subsequent polishing, is then deposited on the previously formed structure, in the etched portions of the layer 124 (i.e. in the recesses 114 and at the regions of the structured layer 110 intended to comprise only the second material ). Portions of layer 126 are also deposited on the remaining portions of layer 124.
• a chemical mechanical polishing (CMP) is then performed with stopping on the remaining portions of the layer 124, thereby removing the portions of the layer 126 deposited on the remaining portions of the layer 124 (FIG. 8), and forming the structured layer 110 .
• CMP chemical mechanical polishing
• the etch stop layer 116 is then deposited on the structured layer 110, then a layer 127 comprising the material of the spacer 120 and of thickness e is deposited on the stop layer of FIG. engraving 116.
• Lithography and etching steps of the layer 127 are then implemented so that a remaining portion of the layer 127 forms the spacer 120 ( Figure 10).
• the presence of the etch stop layer 116 at the portion or parts thereof etched layer 127 avoids over-etching in the structured layer 110 during etching of the layer 127.
• the second semi-reflective layer 118 is then deposited on the entire structure, that is to say on the spacer 120 and on the portion or portions of the etch stop layer 116 not covered by the spacer 120.
• a thin adhesion layer (not shown) may be deposited on the entire structure, prior to the deposition of the second semi-reflective layer 118.
• the second antireflection layer 122 is then deposited on the second semi-reflective layer. 118.
• the device obtained corresponds to the device 100 shown in FIG.
• FIG. 11 represents the filter device 100 according to a second embodiment in which each interference filter 106.1 - 106.6 comprises two Fabry-Perot cavities superimposed one above the other.
• the device 100 includes the first antireflection layer 104 disposed on the substrate 102.
• the thickness of the portion of the first antireflection layer 104 formed at the first group of filters 106.1 - 106.3 does not include a spacer is greater than that of the part of the first antireflection layer 104 formed at the second group of filters 106.4 - 106.6.
• a third semi-reflective layer 128 is disposed on the first anti-reflection layer 104.
• a second spacer 120.2 is formed on the third semi-reflective layer 128.
• the first anti-reflection layer 104 thus forms, at a first region of the substrate 102 on which the first group of filters 106.1 - 106.3 is intended to be made, a relief whose thickness is substantially equal to that of the second spacer 120.2.
• the sum of the thicknesses of the third semi-reflecting layer 128 and of the part of the first antireflection layer 104 at the level of the first group of filters 106.1 - 106.3 is therefore substantially equal to that of the thicknesses of the second spacer 120.2, the third semi-layer reflector 128 and the portion of the first antireflection layer 104 at the second filter group 106.4 - 106.6.
• the first antireflection layer 104 may in this case have a constant thickness.
• An upper face of the third semi-reflective layer 128 at the first group of filters 106.1 - 106.3 and an upper face of the second spacer 120.2 form a flat surface on which is disposed another etch stop layer 116.3, called the third layer. stopping etching to distinguish it from the second etch stop layer 116.2 previously described in conjunction with FIG. 3, whose role is to protect the second spacer 120.2.
• the device 100 comprises another structured layer 110.3, called the third structured layer to distinguish it from the second structured layer 110.2 previously described in connection with FIG. 3, common to all the filters 106.1 - 106.6.
• the third structured layer 110.3 comprises the two different refractive index materials and, in some regions, similar structures to those previously described in connection with FIG. 1.
• the structured third layer 110.3 here is similar to the structured layer 110 previously described. in connection with Figure 1.
• the first semi-reflective layer 108 for example comprising a material similar to that of the third semi-reflective layer 128, is disposed on the third structured layer 110.3.
• a second Fabry-Perot cavity is formed between the two semi-reflective layers 108 and 128.
• First Fabry-Perot cavities similar to those of the device 100 previously described in connection with FIG. , are then performed on the second Fabry-Perot cavities.
• the first structured layer 110.1 common to all the filters 106.1 - 106.6 is disposed on the first semi-reflective layer 108.
• the first structured layer 110.1 is similar to the structured third layer 110.3.
• the first etch stop layer 116.1 is disposed on the first structured layer 110.1.
• the first spacer 120.1 for example similar to the second spacer 120.2, is disposed on the first etch stop layer 116.1 at the second filter group 106.4 - 106.6.
• the second semi-reflective layer 118 is disposed on the first spacer 120.1 and, at the first group of filters 106.1 - 106.3, on the first etch stop layer 116.1.
• the second antireflection layer 122 for example similar to that previously described in connection with FIG. 1, is disposed on the second semi-reflecting layer 118.
• the two Fabry-Perot cavities formed can be similar to each other.
• those of the device 100 according to the second embodiment have better rejection and better selectivity.
• each structured layer 110.1 and 110.3 is carried out on a plane face (the upper face of the third etch stop layer 116.3 for the third structured layer 110.3 and the upper face of the first semi-reflective layer 108 for the first structured layer 110.1).
• the second spacer 120.2 is disposed under the third structured layer 110.3.
• FIG. 12 represents the spectral responses obtained for a filtering device similar to that described with reference to FIG. 11, that is to say having two structured layers 110.1 and 110.3 in which the structures are made throughout the entire thickness and forming, for each filter, two Fabry-Perot cavities superimposed one above the other.
• This filtering device comprises six interference filters not including the spacers 120.1 and 120.2 and whose spectral responses correspond to the curves referenced 40, 42, 44, 46, 48 and 50, and five interference filters comprising the spacers 120.1 and 120.2 and whose spectral responses correspond to the curves referenced 52, 54, 56, 58 and 60.
• the filter device 100 making it possible to obtain the spectral responses represented in FIG. 12 comprises the following elements:
• first antireflection layer 104 made of SiN and having a thickness equal to 20 nm at the level of the five filters comprising the spacers, and having a thickness equal to 100 nm at the level of the six filters that do not include the spacers;
• third semi-reflective layer 128 made of Ag and having a thickness equal to 27 nm;
• second semi-reflective layer 118 made of Ag and of thickness equal to
• second antireflection layer 122 made of SiN and having a thickness equal to 67 nm.
• the SiN used in this filtering device is enriched in silicon and, at the level of the filters comprising the spacers 120.1 and 120.2, the second antireflection layer 122 is covered with a portion of amorphous silicon. thickness equal to 120 nm.
• the first antireflection layer 104 is adapted to the optical impedance of all the filters
• the eleven filters of this filtering device cover a spectral band between about 450 nm and 900 nm.
• the central wavelengths of the spectral responses (order 1) are uniformly distributed in this spectral band that covers most of the visible and near-infrared spectrum.
• the six interference filters do not not including the spacers 120.1 and 120.2 and whose spectral responses correspond to the curves referenced 40, 42, 44, 46, 48 and 50 cover a first portion of this spectral band from about 450 nm to about 680 nm.
• the five interference filters comprising the spacers 120.1 and 120.2 and whose spectral responses correspond to the curves referenced 52, 54, 56, 58 and 60 cover a second portion of this spectral band ranging from about 720 nm to about 900 nm.
• those represented in FIG. 12 have maximum amplitudes that are more homogeneous with respect to one another thanks to the superposition of two Fabry-Perot cavities in each of the filters 106.
• FIGS. 13 to 17 represent steps of a method of producing the filtering device 100 previously described in connection with FIG. 11.
• the thickness of this first layer 130 is equal to the thickness of the second spacer 120.2 intended to be made.
• this first layer 130 is then implemented in the first layer 130 such that a remaining portion 132 of the first layer 130 is intended to form part of the first antireflection layer 104 located at 106.1 - 106.3 filters having no spacers.
• the first antireflection layer 104 is then completed by depositing a material similar to that of the first layer 130 on both the remaining portion 132 of the first layer 130 and the portion of the substrate 102 not covered by the remaining portion 132, with thickness equal to that of the first anti-reflection layer portion 104 intended to be located at the level of the filters intended to include the spacers
• the third semi-reflective layer 128 is then deposited on the first antireflection layer 104.
• a layer intended to form the second spacer 120.2, that is to say comprising the material of this second spacer 120.2 and whose thickness is at least equal to that of the second spacer 120.2 is then deposited on the third semi-reflective layer 128.
• a planarization of the CMP type is then implemented with a stop on the part of the third semi-reflective layer 128 (or of a thin protective layer not shown) located on the part of the first antireflection layer 104 whose thickness is the largest.
• the remaining portion of this layer forms the second spacer 120.2 ( Figure 15).
• the second spacer 120.2 and the portion of the third semi-reflective layer 128 intended to be part of the second Fabry-Perot cavity of the first interference filters 106.1 - 106.3 form a planar upper surface.
• the third etch stop layer 116.3 is then deposited on the previously formed structure, that is to say on the flat surface formed by the second spacer 120.2 and the part of the third semi-layer.
• -reflector 128 being on the part of the first antireflection layer 104 whose thickness is the largest.
• a layer 134 comprising the first material and having a thickness equal to the thickness eN of the third structured layer 110.3 intended to be produced is then deposited on the third etch stop layer 116.3.
• Lithography and etching steps of the layer 134 are then implemented to form the hollows 114, that is, to remove the portions of the layer 134 located at the regions of the structured third layer 110.3. to not include the first material.
• a layer comprising the second material and having a thickness at least equal to the thickness eN of the structured third layer 110.3 is then deposited on the structure previously produced, in the etched portions of the layer 134 (that is to say in the hollows 114 and at the level of the regions of the structured third layer 110.3 intended to comprise only the second material). Portions of this layer are also deposited on the remaining portions of the layer 134.
• a chemical mechanical polishing is then performed with stopping on the remaining portions of the layer 134, thereby removing the portions of the layer deposited on the remaining portions of the layer 134 and forming the third structured layer 110.3 ( Figure 17).
• the first semi-reflective layer 108 is then deposited on the third structured layer 110.3, then the first structured layer 110.1 is then performed by performing steps similar to those carrying the third structured layer 110.3.
• the device 100 is then completed by implementing steps similar to those previously described in connection with the embodiment of the device 100 according to the first embodiment.
• the materials of the structured layers 110, 110.1 and 110.2 and the spacers 120, 120.1 and 120.2 are dielectric materials.
• these materials may be semiconductor materials, for example amorphous or polycrystalline silicon, ZnO, ZnS, ZnSe, or ZnTe.
• Figure 18 schematically shows an image sensor 1000 according to a particular embodiment.
• the image sensor 1000 comprises an electronic part 1002, formed for example of CMOS detection elements forming pixels 1004.
• the filtering device 100 is integrated on the front face of this electronic part 1002, such as the filters 106. are arranged facing the pixels 1004. It is possible that each filter 106 is disposed opposite a pixel 1004, or else facing several adjacent pixels.
• the image sensor 1000 may correspond to a hyperspectral camera, and may comprise other elements, for example optical and electronic such as electrical interconnections and micro-lenses, not shown in FIG. 18.

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