Classifications

• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
  • G01P1/00—Details of instruments
  • G01P1/003—Details of instruments used for damping
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
  • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
  • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
  • G01C19/5783—Mountings or housings not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
  • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
  • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
  • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
  • G01P2015/0862—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with particular means being integrated into a MEMS accelerometer structure for providing particular additional functionalities to those of a spring mass system
  • G01P2015/0882—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with particular means being integrated into a MEMS accelerometer structure for providing particular additional functionalities to those of a spring mass system for providing damping of vibrations

Definitions

• the present invention relates to an inertial sensor.
• Inertial sensors are used to record accelerations and yaw rates. There is a tendency to arrange the inertial sensors in ever smaller housings.
• inertial sensor elements can be operated in different frequency ranges. Different types of attachment for the initial sensor elements have different damping properties in the different frequency ranges.
• Different types of attachment for the initial sensor elements have different damping properties in the different frequency ranges.
• Inertialsensor with several different sensor elements each sensor element are mounted so that its specific mounting has good damping properties in the frequency range of the sensor element.
• signals of the sensor elements of the inertial sensor can have the least possible superimposition due to interspersed vibrations.
• By the slight overlay events to be recorded can be imaged in the signals without interference and evaluated with a high level of security.
• An inertial sensor having the following features is presented: a first sensor element, which is vibration-damped by an attenuation element in relation to an interface of the inertial sensor, wherein the first sensor element is designed to detect a first measured variable in a first frequency band and the attenuation element is designed, at least attenuate vibrations in the first frequency band; and a second sensor element that is mechanically coupled to the interface, wherein the second sensor element is configured to detect a second measured variable in a second frequency band.
• An inertial sensor may be understood as meaning a sensor for detecting at least one acceleration and / or at least one yaw rate.
• the inertial sensor can be designed to accelerations in several mutually angularly offset axes and / or rotation rates by several
• the inertial sensor can be designed to detect accelerations in three spatial directions and / or rotation rates about the three spatial directions.
• the first sensor element may have a first operating point in the first frequency band.
• at least one sensor body of the first sensor element with a first
• Frequency be vibrated within the first frequency band.
• the second sensor element may have a second operating point in the second frequency band.
• an at least one sensor body of the second sensor element can be caused to oscillate at a second frequency within the second frequency band.
• the damping element may be designed to pass an amplitude of a parasitic oscillation, at least within the first frequency range, downsized to the first sensor element.
• the first sensor element and / or the second sensor element may be multiaxial. As a result, the first measured variable and / or the second
• Measured variable can be detected in several directions.
• the first sensor element can be coupled undamped to the interface.
• the inertial sensor can have a smaller amplitude increase of the exciting oscillations within the first frequency range in an undamped state, than in a damped state.
• the damping element may be formed as a flexible beam structure, which connects a part of the inertial sensor coupled to the interface with a vibratable part of the inertial sensor, wherein the first
• Beam structure may be formed as a bending springs. The longer the bars, the softer the second sensor element can be stored.
• the beam structure may bridge a gap disposed between an annular peripheral ring coupled to the interface of the inertial sensor and a vibratory island, wherein a beam of the
• Beam structure connects a side surface of the island with an aligned transversely to the side surface of the inner surface of the ring. By connecting transversely aligned surfaces, the beams can perform movements in several spatial directions. This can also cause vibrations in several
• An additional soft material may be disposed between the beams of the beam structure.
• the damping system can be optimally designed and it can in particular the amplitude of the
• Damping material also easily over the substrate plane survive or stand back below the substrate level.
• the damping material can completely cover the beams, the island and partly the frame on at least one side of the substrate plane.
• the inertial sensor may have a first substrate layer and at least one second substrate layer, wherein the substrate layers are arranged in different planes and the first sensor element is arranged on the first substrate layer and the second sensor element is arranged on the second substrate layer.
• the damped suspended sensor element are protected by the undamped sensor element of the inertial sensor.
• At least one middle substrate layer may be arranged between the first substrate layer and the second substrate layer, the middle substrate layer spacing the first substrate layer from the second substrate layer and forming a cavity between the first substrate layer and the second substrate layer.
• a cavity can be created in a simple manner as a space for movements of the first sensor element.
• the substrate layers may be interconnected by solder balls, wherein the solder balls form an electrical contact and / or a mechanical contact. By solder balls, a cohesive contact can be achieved.
• a sealing device for sealing the cavity can be arranged between the substrate layers.
• the sealing device can protect the first sensor element from contamination.
• At least one of the substrate layers may have an annular peripheral foot to define a spacing between the substrate layers and form the cavity.
• the foot can define for a defined distance between the substrate layers.
• the first sensor element and the second sensor element can be arranged on a substrate. By arranging side by side, a low overall height of the inertial sensor can be achieved.
• the first sensor element and / or the second sensor element may comprise an integrated circuit for processing sensor signals of the first
• the sensor signal can be filtered. By filtering, the rotation rates and / or accelerations to be detected can be reliably detected.
• the first sensor element may be an acceleration sensor and the second sensor element may be a rotation rate sensor or vice versa.
• FIG. 1 is a sectional view of an inertial sensor according to a
• Fig. 2 is an illustration of a lower substrate layer with a
• Fig. 3 is a representation of a central substrate layer according to a
• Fig. 4 is an illustration of an upper substrate layer with a second
• FIG. 5 shows an illustration of an inertial sensor with a sealing device made of filler according to an exemplary embodiment of the present invention
• FIG. 6 is a sectional view of an inertial sensor with a
• a sealing device made of solder material according to an embodiment of the present invention made of solder material according to an embodiment of the present invention
• FIG. 7 is an illustration of a lower substrate layer with one with a
• a sealing device made of solder material according to an embodiment of the present invention made of solder material according to an embodiment of the present invention
• FIG. 8 is an illustration of a middle substrate layer with one with a
• a sealing device made of solder material according to an embodiment of the present invention is a sectional view of an inertial sensor with a circumferential foot at the upper substrate level according to an embodiment of the present invention
• FIG. 10 is a sectional view of an inertial sensor with a circumferential foot at the lower substrate level according to an embodiment of the present invention
• 1 1 is a sectional view of an inertial sensor with a connection of the lower substrate plane with the upper substrate plane by solder balls according to an embodiment of the present invention.
• Fig. 12 is an illustration of an upper substrate layer with side by side
• FIG. 13 is a sectional view of an inertial sensor with a damped first sensor element and an undamped second sensor element on a substrate plane according to an exemplary embodiment of the present invention
• 15 is an illustration of a bottom of an inertial sensor with a
• the inertial sensor 100 has a damper system.
• the overall system 100 consists of three parts 102, 104, 106, a lower substrate layer 102, here with a sensor 108, a middle substrate layer 104 for the electrical and mechanical connection and an upper substrate layer 106 and with a further sensor 10.
• a substrate layer may include a plurality of metallization levels and vias.
• the lower substrate layer 102 consists of an island 1 12, which is circumferentially enclosed by a ring 1 14.
• the island 1 12 and the ring 1 14 are connected to each other via spring strut 16 consisting of printed circuit board material mechanically and electrically.
• spring strut 16 consisting of printed circuit board material mechanically and electrically.
• MEMS microelectromechanical sensor element
• ASIC application-specific integrated circuit
• the evaluation is done over only one
• ASIC application specific integrated circuit
• strut 1 16 external mechanical vibrations in a certain frequency spectrum only attenuated to the island 1 12 transmitted.
• the lower substrate layer 102 is electrically and mechanically connected by soldering to another printed circuit board (for example a control device).
• the exact shape of the strut 1 16 is arbitrary. Here is shown by way of example only a variant.
• the MEMS 108 and / or ASICs 1 18 by gluing and wire bonding or flip-chip soldering or
• the middle substrate layer 104 includes electrical vias 120 and possibly electrical lines. In addition, it serves for the electrical and mechanical connection of the upper 106 and lower 102 substrate layer, while ensuring the necessary stand-off of the upper substrate layer 106 of the MEMS 108 and / or ASIC 1 18 on the lower substrate layer 102.
• the individual substrate layers 102, 104, 106 are mechanically and electrically connected to each other.
• the upper substrate layer 106 consists of a printed circuit board with
• Metallization surfaces and at least one MEMS 1 10 and / or at least one ASIC 122 which are also mechanically and electrically connected by means of gluing and wire bonding or flip-chip soldering or Leitkleben with the lower substrate layer 102 and the island 1 12.
• the sensors 110 on the upper side can be protected by thermosetting spraying (molding) of molding compound 124 or with a cover 124.
• FIG. 1 is a sectional view of an inertial sensor 100 according to an embodiment of the present invention.
• Inertial sensor 100 has a first sensor element 108 and a second
• the first sensor element 108 is a through
• the first sensor element 108 is designed to detect a first measured variable in a first frequency band.
• the damping element 1 16 is designed to damp vibrations at least in the first frequency band.
• the second sensor element 110 is mechanically coupled to the interface 126.
• the second sensor element 110 is designed to detect a second measured variable in a second frequency band.
• the second sensor element 110 is coupled to the interface 126 without attenuation.
• the damping element 1 16 is formed as a flexible beam structure 1 16 having a coupled to the interface 126 of the inertial sensor 100 with a vibratory part 1 12 of the Inertialsensors 100 connects, wherein the first sensor element 108 is connected to the oscillatory member 1 12.
• the beam structure 1 16 bridges a gap which is arranged between an annular circumferential, coupled to the interface 126 ring of the inertial sensor 100 and a vibratory island 1 12.
• a beam 16 of the beam structure 16 connect a side surface of the island 112 with an inner surface of the ring oriented transversely to the side surface.
• the inertial sensor 100 has a first one
• Substrate layer 102 and at least one second substrate layer 106 wherein the substrate layers 102, 106 are arranged in different planes and the first sensor element 108 is disposed on the first substrate layer 102 and the second sensor element 1 10 is disposed on the second substrate layer 106.
• At least one middle substrate layer 104 is arranged between the first substrate layer 102 and the second substrate layer 106, the middle substrate layer 104 spacing the first substrate layer 102 from the second substrate layer 106, and a cavity between the first substrate layer
• Substrate layer 102 and the second substrate layer 106 forms.
• the substrate layers 102, 104, 106 are connected to one another by solder balls, wherein the solder balls form an electrical contact and / or a mechanical contact.
• the first sensor element 108 is a
• the first sensor element 108 is a
• Rotation rate sensor 1 10 the sensor elements 108, 110 and / or the electrical circuits 1, 18, 122 are connected to the substrate layers 102, 106 by bonding wires 128.
• the substrate layers 102, 104, 106 are formed from a substrate 130.
• the first sensor element 108 and / or the second sensor element 1 10 has an integrated circuit 1 18, 122 for processing sensor signals of the first sensor element 108 and / or of the second sensor element 110.
• FIG. 1 shows a package stacking for the selective damping of inertial sensors 108, 110.
• the first sensor element 108 is decoupled by a vibration decoupling system.
• Vibration decoupling system is composed of an inner substrate part 1 12 and an outer annular substrate part, wherein the two substrate parts are connected via beam-like structures 1 16.
• Vibration decoupling system is mounted below a substrate 106 of the second sensor element 110 and decouples the first sensor element 108 from the next level, such as a controller, scattering vibrations. It is thus a vibration decoupling on I st-level substrate level.
• the presented here spring structure 1 16 is for the damping of a
• FIG. 2 shows a representation of a lower substrate layer 102 with a
• the lower substrate layer 102 or substrate plane 102 essentially corresponds to the lower substrate layer in FIG. 1.
• the lower substrate layer 102 is designed as an annularly closed edge 200, which is separated from the island 12 by a gap 202.
• the edge 200 is here square-shaped and has a plurality of electrical and / or mechanical contact points 204.
• the contact points 204 are formed as solder balls 204.
• the contact points 204 are arranged in a single row along the edge 200.
• the island 1 12 is here also square shaped.
• the gap 202 is circumferentially uniformly wide.
• the gap 202 is bridged by four beam structures 1 16. Depending on a beam structure 1 16 connects an inner side of the edge 200 with a transverse thereto arranged outside of the island 1 12. In this case, the beam structure 1 16 has a meandering shape. In the illustrated embodiment, the beam structure 1 16 three rectangular
• the four beams 16 of the beam structure 1 16 together substantially form a ring concentric with the edge 200, which is arranged within the gap 202.
• the ring is four times slotted.
• the four parts of the ring each have at one end a connection to the edge 200 and at an opposite second end a connection to the
• Island 1 12 on. Within the bars 1 16 metallic structures are arranged, which serve as conductor tracks for connecting the first sensor element 108 and / or for influencing a spring rate of the beam structures 1 16.
• the first sensor element 108 is arranged centrally on the island 1 12.
• Evaluation electronics 1 18 is also centered on the island 1 12 between the first
• Sensor element 108 and the lower substrate layer 102 is arranged.
• Sensor element 108 and evaluation electronics 1 18 are electrically connected via the conductor tracks in the beam structures with at least one selection of the contact points 204.
• FIG. 3 shows an illustration of a middle substrate layer 104 according to an embodiment of the present invention.
• the middle substrate layer 104 essentially corresponds to the middle substrate layer in FIG. 1.
• the middle substrate layer 104 essentially corresponds to the edge of the lower substrate layer in FIG. 2.
• the edge 200 of the middle substrate layer 104 has a
• the Contact points 204 are formed as solder balls 204.
• the contact points 204 are arranged in a single row along the edge 200.
• the contact points 204 are arranged corresponding to the contact points of the lower substrate layer. 4 shows a representation of an upper substrate layer 106 with a second one
• the upper substrate layer 106 essentially corresponds to the upper substrate layer in FIG. 1.
• the upper substrate layer 106 is here like the lower substrate layer in FIG. 2 and the middle substrate layer in FIG. 3 square.
• the dimensions of the upper substrate layer 106 correspond to the lower and middle substrate layers.
• the upper substrate layer 106 also has electrical and / or mechanical contact points. The contact points are over
• Via contacts 120 are guided on an upper side of the upper substrate layer 106 shown here.
• Transmitter 122 are electrically via tracks in the upper
• Substrate layer 106 connected to the vias 120.
• MEMS sensors 108, 1 10 Susceptibility to failure of MEMS sensors 108, 1 10 presented at the installation site.
• the sensors 108, 110 for example an acceleration sensor 110 and a yaw rate sensor 108 are only selectively decoupled from vibrations, so that a clear performance
• the module 100 presented here consists of a plurality of electrically and mechanically connected substrate layers 102, 104, 106, which enclose a cavity.
• a cavity is at least one of the six pages which the
• the lower substrate layer 102 consists of two parts. An island 1 12 and a circumferential closed ring 200. Both parts, island 1 12 and ring 200, are connected to each other via thin beam-like structures 1 16 mechanically and electrically. These beam-like structures 1 16 are designed so that vibrations from the
• Island 1 12 to the ring 200 or the other way decoupled.
• the upper substrate layer 106 is connected to the circumferentially closed ring 200 of the lower substrate layer 102 and thus in the installed state with a
• the middle substrate layer 104 connects the upper 106 and lower
• Substrate layers 102 mechanically and electrically and may optionally be replaced by solder balls 204.
• All of the substrate layers 102, 104, 106 include metallized pads 204 for electrical and mechanical coupling to the other substrate layers 102, 104, 106, components, or other circuit boards, such as an ESP controller.
• All substrate layers 102, 104, 106 may include metallization layers.
• electrical signals can be passed through vias 120 through the individual substrate layers 102, 104, 106.
• the upper substrate layer 106 and the lower substrate layer 102 are equipped with at least one MEMS 108, 1 10 / ASIC 1 18, 122.
• the sensor elements 108, 110 and / or evaluation electronics 18, 122 can be installed in flip-chip technology. Likewise, the sensor elements 108, 1 10 and / or evaluation electronics 1 18, 122 can be mounted by gluing and wire bonds 128 or by Leitkleben.
• the MEMS 1 10 / ASIC 122 on the upper substrate layer 106 are provided with molding compound 124 or a cover 124
• Substrate layer 102 may be preceded by a glob-top (potting on chip)
• the approach presented here presents a compact structure 100 for the selective decoupling of mechanical vibrations.
• the first sensor element 108 for example a yaw rate sensor 108
• the second sensor element 1 for example a
• Acceleration sensor 1 10 is hard-connected.
• the hard connection is made by a direct mounting on the upper substrate layer 106.
• the resulting transmission functions at the sensors 108, 110 are therefore different.
• the first sensor element 108 thus has a high attenuation at 20-30 kHz, whereas the second sensor element 110 does not have an elevation at low frequencies (2-5 kHz).
• the approach presented here can be a cost effective
• Accelerometer 1 10 are used. Noise at low frequencies is not expected.
• the resonant frequency of the spring structure 1 16 is only by the
• the ground on the island 1 12 of the lower substrate layer 102 is composed of a mass of the first sensor element 108 plus the optional one
• Transmitter 1 18 is relatively low, so that the center of gravity of this island 1 12 from the substrate 130 and the sensor element 108 plus the
• Transmitter 1 18 is relatively close to the pivot point of the island 1 12. Thus, the system is balanced and an inexpensive sensor 108 with higher spin sensitivity can be used.
• the spring system 16 is softer and thus the resulting damping for the same strut structures at a certain frequency above the resonant frequency of the damper higher.
• FIGS. 1 to 4 show plan views and a section of the sensor system 100 with selective damping of the second sensor element 108.
• 5 shows a representation of an inertial sensor 100 with a
• Sealer 600 made of filler according to an embodiment of the present invention.
• the inertial sensor 100 essentially corresponds to the inertial sensor in FIG. 1.
• a first sealing layer 600 is disposed between the lower substrate layer 102 and the middle substrate layer 104.
• a second sealing layer 600 is between the middle
• Substrate layer 104 and the upper substrate layer 106 is arranged.
• Sealing layers 600 seal gaps between the solder balls 204 to make it difficult for contaminants to enter the void between the lower substrate layer 102 and the upper substrate layer 106.
• a sealing device 600 for sealing off the cavity is arranged between the substrate layers 102, 104, 106.
• the sealing device 600 is made of an electrically insulating filler 600.
• the filler 600 seals the cavity.
• FIG. 6 shows a sectional view of an inertial sensor 100 with a
• a sealing device 600 made of solder material according to an embodiment of the present invention The inertial sensor 100 essentially corresponds to the inertial sensor in FIG. 1.
• a first solder ring 600 is arranged between the lower substrate layer 102 and the middle one
• Substrate layer 104 is arranged. Furthermore, a second solder ring 600 is arranged between the middle substrate layer 104 and the upper substrate layer 106 as sealing device 600. The solder rings 600 are outside the
• FIG. 7 shows an illustration of a lower substrate layer 102 having a soldering material with a sealing device 600 according to an exemplary embodiment of the present invention.
• the lower substrate layer 102 essentially corresponds to the lower substrate layer in FIG. 7.
• the sealing device 600 is designed as a solder ring 600 that extends around the outside of the contact devices in an annular manner.
• Lotring 600 provides additional mechanical and / or electrical connection to the middle or upper substrate plane.
• FIG. 8 shows a representation of a central substrate layer 104 with a soldering material with a sealing device 600 according to an exemplary embodiment of the present invention.
• the middle substrate layer 104 essentially corresponds to the middle substrate layer in FIG. 7.
• the sealing device 600 is designed as a solder ring 600 that extends around the outside in an annular manner around the contact devices.
• the solder ring 600 provides additional mechanical and / or electrical connection to the upper and / or lower substrate plane.
• An alternative lateral sealing can also be achieved if a solder ring 600 which encircles the solder balls 204 is also introduced on the middle substrate plane 104.
• FIG. 9 shows a sectional representation of an inertial sensor 100 with a circumferential foot 1000 on the upper substrate plane 106 in accordance with FIG.
• the inertial sensor 100 essentially corresponds to the inertial sensor in FIG. 1.
• the inertial sensor has only a lower substrate layer 102 and an upper substrate layer 106.
• the upper substrate layer has a circumferential foot 1000, which produces a plane offset of the contact devices 204 to a lower side of the upper substrate layer 106. Due to the plane offset, the upper substrate layer 106 is spaced from the lower substrate layer 102 in the region of the sensor elements 108, 110.
• the cavity is arranged between the substrate layers 102, 106.
• the plated-through holes 120 run in order to electrically connect the second sensor element 110 to the interface 126.
• FIG. 10 shows a sectional representation of an inertial sensor 100 with a circumferential foot 1000 on the lower substrate plane 102 in accordance with FIG.
• the inertial sensor 100 Corresponds essentially to the inertial sensor in Fig. 10.
• the foot 1000 is here part of the lower substrate plane 102nd
• At least one of the substrate layers 102, 106 has an annular encircling foot 1000 to define a spacing between the substrate layers 102, 106 and form the cavity.
• the middle substrate layer can be saved.
• the blind hole design shown can be realized by deep milling or by pressing with NoFlow prepreg.
• Fig. 1 1 shows a sectional view of an inertial sensor 100 with a
• the inertial sensor 100 essentially corresponds to the inertial sensor in FIG. 1.
• the inertial sensor has only a lower substrate layer 102 and an upper substrate layer 106.
• the middle substrate layer is replaced by solder balls 1200.
• the solder balls 1200 have a larger diameter than the solder balls of the interface 126.
• the diameter of the solder balls, the lower substrate layer 102 and the upper substrate layer 106 are held at a predetermined distance from each other. The distance defines a height of the cavity of the sensor 100.
• solder balls 1200 of an adapted diameter may also be used to create the stand-off of the upper substrate layer 106.
• FIG. 12 shows an illustration of an upper substrate layer 106 with a second sensor element 1 10 arranged next to one another and evaluation electronics 122 according to an exemplary embodiment of the present invention.
• the upper substrate layer 106 essentially corresponds to the upper substrate layer in FIG. 4.
• both the evaluation electronics 122 and the second sensor element 110 are arranged directly on the upper substrate layer 106.
• the second Sensor element 1 10 is connected via wire bonds 128 to the transmitter 122.
• FIG. 12 another embodiment is shown showing an alternative arrangement of the MEMS 1 10 / ASIC 122.
• No surface for structuring the beam-like structures has to be provided on the upper substrate layer 106, so that the usable area for the application of MEMS 1 10 / ASIC 122 is greater in comparison with the lower substrate layer. Therefore, the MEMS 1 10 / ASIC 122, for example, need not be stacked on top of each other but can be juxtaposed to reduce the overall height of the damper system.
• FIG. 13 shows a sectional view of an inertial sensor 100 with a damped first sensor element 108 and an undamped second sensor element 110 on a substrate plane 1400 according to FIG
• the damping structure 1 16 is machined out of the substrate layer 1400.
• the damping structure 16 essentially corresponds to the damping structure described in the preceding exemplary embodiments.
• the substrate plane 1400 has plated-through holes 120, which connect the evaluation electronics 1 18 to an interface 126 on an opposite side of the substrate plane 1400.
• the inertial sensor 100 has a cover 1402 which encloses a cavity in which the first sensor element 108, the second sensor element 110 and the
• Evaluation electronics 1 18 are arranged.
• the first sensor element 108 is spaced from the lid 1402 to be vibratable.
• the first sensor element 108 and the second sensor element 110 are arranged on a substrate 1400.
• Substrate 1400 with a cover 1402, such as plastic or metal housed.
• the rotation rate sensor 108 is disposed on the island 1 12 and connected to wire bonds 128 directly to an ASIC 1 18 on the hard-bonded substrate side.
• the first sensor element 108 and an extra ASIC may be disposed on the island 1 12.
• the electrical connection can extend via the strut 1 16 to the solder balls 204 in the frame.
• only the first sensor element 108 can be arranged on the island 1 12.
• Wire bonds 128 may extend from the first sensor element 108 to the island 12. From there, a rewiring via the strut 1 16 done to the frame.
• a flip-chip mounting of the sensors 108, 1 10 is possible.
• the strut 1 can contain 16 copper, so even if wire bonds
• the copper can be used to influence the resonant frequency and the cant of the spring-mass system.
• an additional cover can be arranged as particle protection from the underside over the subregion of the island structure 1 12.
• FIG. 14 shows an illustration of an upper side of an inertial sensor 100 with a damped first sensor element 108 and an undamped second sensor element 110 on a substrate plane 1400 according to one
• the inertial sensor 100 essentially corresponds to the inertial sensor in FIG. 14.
• the structure of the damping element 16 is shown as shown in FIG.
• the undamped second sensor element 110 and the evaluation electronics 18 are arranged next to the first sensor element 108, which is mounted so as to be damped by the damping element 16.
• the first sensor element 108 is connected by wire bonds 128 directly to the
• FIG. 15 shows an illustration of a lower side of an inertial sensor 100 with a damped first sensor element and an undamped second one Sensor element on a substrate level 1400 according to an embodiment of the present invention.
• the inertial sensor 100 essentially corresponds to the inertial sensor in FIG. 14.
• the interface 126 is illustrated which ensures electrical contact and, alternatively or additionally, mechanical contact of the inertial sensor 100 with a mounting surface.
• Interface 126 is formed here in the area of the evaluation electronics as a grid of solder balls 204. In the region of the damping element 1 16, the interface is formed as a single row around the damping element 1 16 circumferential line of solder balls 204. In the area of the transmitter, the
• Interface 126 both the mechanical contact, and the electrical
• the interface 126 in particular provides the mechanical contact.
• an exemplary embodiment comprises a "and / or" link between a first feature and a second feature, then this is to be read so that the embodiment according to one embodiment, both the first feature and the second feature and according to another embodiment either only first feature or only the second feature.

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• 2013
  • 2013-11-12 DE DE102013222966.6A patent/DE102013222966A1/de active Pending
• 2014
  • 2014-10-28 US US15/035,459 patent/US20160291050A1/en not_active Abandoned
  • 2014-10-28 EP EP14793064.8A patent/EP3069148A1/de not_active Withdrawn
  • 2014-10-28 WO PCT/EP2014/073047 patent/WO2015071082A1/de active Application Filing
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