EP2992549A1 - Formation d'une couche semi-conductrice i-iii-vi2 par traitement thermique et chalcogenisation d'un precurseur metallique i-iii - Google Patents
Formation d'une couche semi-conductrice i-iii-vi2 par traitement thermique et chalcogenisation d'un precurseur metallique i-iiiInfo
- Publication number
- EP2992549A1 EP2992549A1 EP14727872.5A EP14727872A EP2992549A1 EP 2992549 A1 EP2992549 A1 EP 2992549A1 EP 14727872 A EP14727872 A EP 14727872A EP 2992549 A1 EP2992549 A1 EP 2992549A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- temperature
- chamber
- semiconductor layer
- selenium
- chalcogenization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 239000002243 precursor Substances 0.000 title claims abstract description 48
- 238000010438 heat treatment Methods 0.000 title claims abstract description 40
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 73
- 230000006641 stabilisation Effects 0.000 claims abstract description 8
- 238000011105 stabilization Methods 0.000 claims abstract description 8
- 238000000280 densification Methods 0.000 claims abstract description 6
- 239000011669 selenium Substances 0.000 claims description 51
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 46
- 229910052711 selenium Inorganic materials 0.000 claims description 46
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- 238000002347 injection Methods 0.000 claims description 26
- 239000007924 injection Substances 0.000 claims description 26
- 239000000203 mixture Substances 0.000 claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 20
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 18
- 239000008246 gaseous mixture Substances 0.000 claims description 15
- 229910052798 chalcogen Inorganic materials 0.000 claims description 6
- 150000001787 chalcogens Chemical class 0.000 claims description 6
- 230000007935 neutral effect Effects 0.000 claims description 5
- 230000000087 stabilizing effect Effects 0.000 claims description 4
- 238000009529 body temperature measurement Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 17
- 239000006096 absorbing agent Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000010949 copper Substances 0.000 description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 18
- 229910052802 copper Inorganic materials 0.000 description 18
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 13
- 229910052733 gallium Inorganic materials 0.000 description 13
- 229910052738 indium Inorganic materials 0.000 description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 12
- 238000005259 measurement Methods 0.000 description 12
- 238000000137 annealing Methods 0.000 description 10
- 239000012071 phase Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 238000001816 cooling Methods 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000002123 temporal effect Effects 0.000 description 4
- 238000012549 training Methods 0.000 description 4
- 229910016001 MoSe Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000011090 industrial biotechnology method and process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000004846 x-ray emission Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
- F27B9/06—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated
- F27B9/10—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated heated by hot air or gas
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D7/00—Forming, maintaining, or circulating atmospheres in heating chambers
- F27D7/06—Forming or maintaining special atmospheres or vacuum within heating chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D7/00—Forming, maintaining, or circulating atmospheres in heating chambers
- F27D7/06—Forming or maintaining special atmospheres or vacuum within heating chambers
- F27D2007/063—Special atmospheres, e.g. high pressure atmospheres
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
- F27D2019/0093—Maintaining a temperature gradient
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Definitions
- FIG. 7 shows two graphs facing each other, each of these two graphs presenting measurements of photovoltaic cell conversion efficiency as a function of the ratio of the molar amount of chalcogen to the molar amount of metal precursor.
- the graph on the right shows measurements made on photovoltaic cells formed according to the training method according to the prior art and the graph on the left presenting measurements made on photovoltaic cells formed according to the forming method according to the invention
- the layers of the stack are preferably electrodeposited, at least in the sense that the values of the parameters of the different heat treatments which are hereafter announced as preferred are more particularly adapted to this case.
- Deposition of at least one of the layers of the stack is likely to induce the need to specifically determine other preferred values of these parameters, even though these should presumably remain in the ranges of values presented below, retaining in particular the principle in the sense of the invention of a monotonically increasing temperature ramp, followed by a plateau, during the heating steps S1 and chalcogénisation S2.
- the annealing step consists at least in heating the stack of layers of elements of groups IB and NIA on the substrate 3 to a temperature between 80 ° C and 1 10 ° C, preferably 90 ° C, maintained for 20 to 40 minutes, preferably 30 minutes, to allow interdiffusion layers between them.
- the annealing thus produced is said to be 'mild' because the maximum annealing temperature is relatively low and consequently its duration can be relatively long. For example, a diffusion of the Gallium layer through the Indium layer to the substrate 3 is thus properly carried out.
- the metal precursor 2 of the type I-III thus formed may be composed of a lower layer of copper, an intermediate layer of composition Cu 9 InGa 4 and an upper layer of Indium.
- the present invention further relates to an oven 4 for the implementation of at least S1 heating steps and chalcogenization S2 described below.
- measuring means 46 or sensors, of the temperature in each chamber 400, 410.
- the temporal evolution of the temperature during these cooling steps can also be controlled by the control means 44 of the heating device 42 as a function of the measurements made by the measuring means 46 in the second chamber 410 of the oven 4, for example together with at least one injection of dinitrogen having a predetermined temperature and for a predetermined time, that by the arrangement at the outlet of the furnace 4 of a series of enclosures, including a third enclosure 420 shown in Figure 9, in each of which a constant determined temperature prevails and possibly a constant determined atmosphere, the series being arranged so that the semiconductor layer 1 to be cooled transits from the third enclosure 420 to the next.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Combustion & Propulsion (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1354112A FR3005371B1 (fr) | 2013-05-03 | 2013-05-03 | Formation d'une couche semi-conductrice i-iii-vi2 par traitement thermique et chalcogenisation d'un precurseur metallique i-iii |
| PCT/FR2014/051030 WO2014177809A1 (fr) | 2013-05-03 | 2014-04-30 | Formation d'une couche semi-conductrice i-iii-vi2 par traitement thermique et chalcogenisation d'un precurseur metallique i-iii |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP2992549A1 true EP2992549A1 (fr) | 2016-03-09 |
Family
ID=48746027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP14727872.5A Ceased EP2992549A1 (fr) | 2013-05-03 | 2014-04-30 | Formation d'une couche semi-conductrice i-iii-vi2 par traitement thermique et chalcogenisation d'un precurseur metallique i-iii |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20160079454A1 (ja) |
| EP (1) | EP2992549A1 (ja) |
| JP (1) | JP6467581B2 (ja) |
| CN (1) | CN105531803B (ja) |
| FR (1) | FR3005371B1 (ja) |
| WO (1) | WO2014177809A1 (ja) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009105423A1 (en) * | 2008-02-21 | 2009-08-27 | Film Solar Tech Inc. | Coating methods and apparatus for making a cigs solar cell |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11135811A (ja) * | 1997-10-28 | 1999-05-21 | Yazaki Corp | Ｃｉｓ系太陽電池モジュール及びその製造方法 |
| US7700464B2 (en) * | 2004-02-19 | 2010-04-20 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from nanoflake particles |
| US20070111367A1 (en) * | 2005-10-19 | 2007-05-17 | Basol Bulent M | Method and apparatus for converting precursor layers into photovoltaic absorbers |
| US8008198B1 (en) * | 2008-09-30 | 2011-08-30 | Stion Corporation | Large scale method and furnace system for selenization of thin film photovoltaic materials |
| JP2012518281A (ja) * | 2009-02-15 | 2012-08-09 | ウッドラフ、ジェイコブ | 平衡前駆体から作られる、太陽電池の吸収層 |
| EP2221876A1 (en) * | 2009-02-24 | 2010-08-25 | General Electric Company | Absorber layer for thin film photovoltaic cells and a solar cell made therefrom |
| TW201042065A (en) * | 2009-05-22 | 2010-12-01 | Ind Tech Res Inst | Methods for fabricating copper indium gallium diselenide (CIGS) compound thin films |
| JP2013504215A (ja) * | 2009-09-02 | 2013-02-04 | ボルマン、ブレント | Ｖｉａ族環境において前駆体層を処理するための方法およびデバイス |
| US8889469B2 (en) * | 2009-12-28 | 2014-11-18 | Aeris Capital Sustainable Ip Ltd. | Multi-nary group IB and VIA based semiconductor |
| JP2013533374A (ja) * | 2010-05-20 | 2013-08-22 | ダウ グローバル テクノロジーズ エルエルシー | カルコゲニド系物質及び後カルコゲン化技術を使用する真空下でのこのような物質の製造方法 |
| WO2012107256A1 (en) * | 2011-02-10 | 2012-08-16 | Empa | Process for producing light absorbing chalcogenide films |
-
2013
- 2013-05-03 FR FR1354112A patent/FR3005371B1/fr active Active
-
2014
- 2014-04-30 EP EP14727872.5A patent/EP2992549A1/fr not_active Ceased
- 2014-04-30 US US14/888,786 patent/US20160079454A1/en not_active Abandoned
- 2014-04-30 CN CN201480036695.7A patent/CN105531803B/zh active Active
- 2014-04-30 WO PCT/FR2014/051030 patent/WO2014177809A1/fr active Application Filing
- 2014-04-30 JP JP2016511119A patent/JP6467581B2/ja active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009105423A1 (en) * | 2008-02-21 | 2009-08-27 | Film Solar Tech Inc. | Coating methods and apparatus for making a cigs solar cell |
Non-Patent Citations (1)
| Title |
|---|
| See also references of WO2014177809A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR3005371A1 (fr) | 2014-11-07 |
| JP2016524319A (ja) | 2016-08-12 |
| CN105531803B (zh) | 2018-11-27 |
| CN105531803A (zh) | 2016-04-27 |
| WO2014177809A1 (fr) | 2014-11-06 |
| JP6467581B2 (ja) | 2019-02-13 |
| FR3005371B1 (fr) | 2015-05-29 |
| US20160079454A1 (en) | 2016-03-17 |
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| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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| 17P | Request for examination filed |
Effective date: 20151030 |
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