EP2974013B1 - Filtre à réactance comprenant des résonateurs d'ondes acoustiques - Google Patents

Filtre à réactance comprenant des résonateurs d'ondes acoustiques Download PDF

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Publication number
EP2974013B1
EP2974013B1 EP13709251.6A EP13709251A EP2974013B1 EP 2974013 B1 EP2974013 B1 EP 2974013B1 EP 13709251 A EP13709251 A EP 13709251A EP 2974013 B1 EP2974013 B1 EP 2974013B1
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EP
European Patent Office
Prior art keywords
resonators
resonator
substrate
series
circuit board
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EP13709251.6A
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German (de)
English (en)
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EP2974013A1 (fr
Inventor
Ralph Durner
Ravi Challa
Wolfgang Till
Loseu ALEH
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SnapTrack Inc
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SnapTrack Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F38/00—Adaptations of transformers or inductances for specific applications or functions
    • H01F38/14—Inductive couplings
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/542—Filters comprising resonators of piezoelectric or electrostrictive material including passive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/60—Electric coupling means therefor
    • H03H9/605—Electric coupling means therefor consisting of a ladder configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6483—Ladder SAW filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/703—Networks using bulk acoustic wave devices
    • H03H9/706—Duplexers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H03H9/725—Duplexers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F38/00—Adaptations of transformers or inductances for specific applications or functions
    • H01F38/14—Inductive couplings
    • H01F2038/146—Inductive couplings in combination with capacitive coupling

Definitions

  • a respective frequency band may comprise a Tx band that is used for transmission of signals at a user's phone, the direction is also called upstream, and an Rx band used for reception of signals, the direction is also called downstream.
  • the band distance describes a frequency interval separating the frequencies of a transmission signal and a receive signal.
  • a band pass filter used for a Tx or a Rx band needs a steep skirt a the side of the pass band that is facing the adjacent Rx or Tx band such that the attenuation in the adjoining band is above the required value.
  • band 28 being an APEC specific application.
  • the Tx band is from 703 to 748 MHz and the respective Rx band from 758 to 803 MHz complying with a bandwidth of 6% and a band distance of 10 MHz.
  • This definition is challenging because the two requirements of a large bandwidth of nearly 6% and a small band distance of 10 MHz are nearly impossible to be realized at the same time by a front-end circuit based on filters working with surface acoustic waves.
  • a further challenge is the temperature coefficient of frequency (TCF) which means that filter properties such as middle frequencies and hence, filter skirts too change with temperature.
  • TCF temperature coefficient of frequency
  • An electro-acoustic band pass filter realized on a standard lithium tantalate piezoelectric material complies with the required small band distance and the skirt steepness resulting therefrom. But such a filter cannot satisfy the bandwidth requirement and is far from reaching it.
  • a band pass filter realized on a standard lithium niobate piezoelectric material can reach a bandwidth of about 6% but is far from complying with the demands in view of the skirt steepness. This is due to its relatively large TCF (temperature coefficient of frequency) of about 80 ppm/K.
  • Document US 5 952 899 A relates to a ladder filter having edge reflection type SAW resonators.
  • a ladder filter including a plurality of series arm resonators and a plurality of parallel arm resonators.
  • Each series arm resonator preferably includes an edge-reflection surface acoustic wave (SAW) resonator which includes a piezoelectric material portion with a pair of edges thereof and utilizes a shear horizontal surface acoustic wave to be excited on the piezoelectric material portion.
  • SAW edge-reflection surface acoustic wave
  • Document EP 0 422 637 A2 relates to a surface acoustic wave device and communication apparatus.
  • the document is directed to a surface acoustic wave device for use in a communication apparatus. It has a multiple of surface acoustic wave elements having different filter characteristics formed on individual piezoelectric substrates, the different filter characteristics being synthesized to form a combined filter having a desired filter characteristic.
  • Document US 5 726 610 relates to a SAW filter device for radio transceiver utilizing different coupling coefficient ratios, wherein a full duplex radio having improved properties is obtained by using asymmetric surface acoustic wave (SAW) filters.
  • the filters are composed of series and parallel coupled SAW resonators. Asymmetry is obtained by covering either of the series or parallel resonators of each filter with a dielectric layer to increase the SAW coupling coefficient of the covered resonators relative to the uncovered resonators.
  • a duplexer comprises a Tx filter and an Rx filter, one of them being a reactance filter comprising impedance elements arranged in a ladder-type structure or a lattice-type structure.
  • the reactance filter comprises a series branch wherein a number of series impedance elements are coupled in series.
  • a ladder type filter parallel branches are connecting the series branch to ground and in a lattice type filter parallel branches are connecting two series branches.
  • Each parallel branch comprises a parallel impedance element.
  • Each of the parallel and series impedance elements comprises a resonator, a series circuit of such a resonator and a series inductance element, or a resonator and a capacitance element coupled in parallel. All resonators operate with acoustic waves.
  • the first resonators of the first impedance elements in the series branch comprise a first piezoelectric material whereas the second resonators of the second impedance elements in the parallel branches comprise a second piezoelectric material different from the first piezoelectric material.
  • first and second resonators of the series impedance elements and the parallel impedance elements respectively are built up on different piezoelectric materials and can thus be independently optimized in view of a specific condition chosen from a steep skirt or a large bandwidth.
  • the filter that operates in the lower band the second piezoelectric material has a greater coupling coefficient than the first piezoelectric material and/or wherein in the Tx or Rx filter that operates in the higher band the first piezoelectric material has a greater coupling coefficient than the second piezoelectric material
  • first and second resonators are realized in first and second piezoelectric materials, both piezoelectric materials deferring mostly in their coupling.
  • the resonators of at least one type of resonators are realized on a piezoelectric material having a relatively high coupling coefficient while the resonators of the respective other type are realized in a piezoelectric material having a relatively low coupling coefficient.
  • piezoelectric materials with lower coupling have a lower TCF.
  • a higher coupling enhances the distance between the main resonance and the anti-resonance of resonator. This distance is also called the pole zero distance directly corresponding to the bandwidth of the filter.
  • a respective piezoelectric material to a first or a second resonator depends on the demands the respective filter and hence the respective pass band of the filter has to fulfill.
  • a filter that needs to have a steep skirt at the low frequency side of its pass band needs a second piezoelectric material having a lower coupling than the first piezoelectric material. Such a filter is not according to the present invention.
  • a filter needing a steep skirt at the high frequency side of its pass band is realized by selecting a first piezoelectric material having a lower coupling coefficient than the second piezoelectric material.
  • At least one impedance element of the series branch that is selected to produce the lower bandwidth and thus the lower coupling is realized by a parallel circuit of a resonator and a capacitance element.
  • the parallel capacitance elements adds its capacitance to the static capacitance of the resonator and hence enhances the capacitance ratio r of static capacitance to dynamic capacitance of a resonator.
  • any kind of means for affecting the bandwidth or the coupling of a resonator in a desired way can be used for the respective type of resonators chosen from first and second resonators.
  • a means for enhancing the bandwidth of a resonator is a series inductance element that is coupled in series to one or more of the respective resonators.
  • a means for reducing the bandwidth of a type of resonators is a dielectric layer deposited on top of the respective resonators.
  • This dielectric layer can be deposited between the piezoelectric material and an electrode of the resonator or on the top electrode of the respective resonators.
  • the dielectric layer is deposited to the entire surface carrying the inter-digital electrodes of the SAW resonators.
  • a major effect can be achieved if the dielectric layer is deposited between piezoelectric material and inter-digital electrodes.
  • the dielectric layer is preferably deposited on top of the top electrode of the BAW resonator.
  • the general idea of the invention is to use different piezoelectric materials for forming first and second resonators. This can best be realized by using separate substrates for the two types of resonators, i.e. first and second resonators.
  • a substrate can be a bulk piece of a piezoelectric material, that is a chip cut from a crystal of a piezoelectric material.
  • the substrate can also be a carrier for a layer of piezoelectric material deposited thereon.
  • Separate substrates for first and second resonators have the advantage that the two substrates can be processed separately to individually optimize each of the two substrates in view of the desired properties of the resonators.
  • a first substrate can be optimized to provide a large bandwidth while a second substrate can be optimized to achieve resonators having a steep skirt on a desired side of their pass band.
  • a steep skirt is normally assigned to a low bandwidth and/or to a low temperature coefficient of frequency.
  • the first and second substrates can be optimized in a contrary manner that is a first substrate in view of a low bandwidth and/or a low temperature coefficient of frequency while the second substrate is optimized in view of a large bandwidth.
  • the resonators that are assigned to have the greater coupling are realized as SAW resonators.
  • resonators assigned to provide a smaller coupling coefficient and hence a steep filter skirt can be realized as BAW resonators.
  • a reactance filter whose first and second resonators are realized on separate substrates needs coupling means for electrically connecting first and second impedance elements in a ladder-type or lattice-type structure. This can be done directly. But it is preferred to use a circuit board for electrically coupling first and second impedance elements.
  • the circuit board provides electrical connection lines connecting two connection pads each. The two substrates have bonding pads that are connected to a respective resonator each and electrically coupled to a respective connection pad just by mounting the substrates on top of the circuit board. Then, all electrical couplings between the series branch and the parallel branches are made by the connection lines that are formed on or within the circuit board.
  • a common circuit board which may be made from a ceramic or an organic laminate
  • the cover may be a rigid cover in the form of a cap providing a cavity between cap and circuit board and enclosing the two substrates in the cavity.
  • the cover may be a film that may comprise a polymer foil which may be laminated on top of the circuit board, thereby covering the first and second substrate mounted on top of the circuit board.
  • the laminated foil may comprise two or more sub-layers that may be equal or different in material and thickness.
  • the foil may be a hermetically tight foil comprising a metallic sub-layer.
  • the metallic sub-layer may be deposited as a metallic film on the cover.
  • the reactance filter comprises first and second substrates carrying at least the first and second resonators where first resonators are realized in the first substrate and second resonators are realized in the second substrate. All connections between the serial branch realized in the first substrate and the given number of parallel branches which are realized in the second substrate are made via connection lines are realized on top of the circuit board or within a metallization layer within a multi-layer circuit board.
  • the connections between the substrates and the circuit board may be made by bump connections between a bonding pad on the substrate and a connection pad on the circuit board.
  • the bonding pad on the first substrate may be arranged that each resonator is neighbored by two first bonding pads.
  • Each first bonding pad is connected to a first connection pad that is connected to a second connection pad on the circuit board via a connection line.
  • the second connection pad is connected to a second bonding pad arranged on the second substrate and electrically coupled to a parallel branch. Input and output of electrical signals may be done by the respective outermost first bonding pads on the first substrate. As these outermost first bonding pads may be coupled to first connection pads, input and output are coupled to the respective outermost first connection pad on the circuit board.
  • the first substrate comprises a number of n first resonators where n is an integer with 2 ⁇ n ⁇ 6. Then, the first substrate comprises at least n + 1 first bonding pads. As each of the first bonding pads is assigned to a first connection pad on the circuit board, the circuit board comprises n + 1 first connection pads.
  • the second substrate comprises a number of m second resonators where m is an integer with n - 1 ⁇ m ⁇ n + 1. Each second bonding pad is coupled to a parallel branch and comprises a respective second resonator. Each second bonding pad is bonded to a second connection pad to achieve a coupling to the first bonding pad and hence to the serial branch within the first substrate via the connection line and the first connection pads.
  • the reactance filter needs at least one ground connection that is coupled to each of the parallel branches. Hence, it is possible to interconnect the ground-sided ends of the parallel branches via a common grounding line on top of the second substrate.
  • each parallel branch separately via a respective grounding pad to a respective ground contact on top of the circuit board and to interconnect all ground contacts via a connection line to a ground terminal of the reactance filter.
  • connection pads may be done via bumps when mounting the respective substrate in flip chip technology on top of the circuit board.
  • the bumps may be solder bumps or stud bumps.
  • the circuit board comprises at least one ground contact that is connected via an inductive line to a ground terminal of the circuit board.
  • the ground terminal is an external terminal and arranged on the bottom of the circuit board facing away from the top surface where the substrates are mounted on.
  • Input and output terminal of the reactance filter are arranged on the same bottom surface and connected to the respective connection pads via a through contact through the circuit board.
  • conductive lines may be guided from the top surface of the circuit board around the edges to the respective terminal on underside of the circuit board.
  • Connections between connection pads and external solder pads (terminals) on the bottom of the circuit board may comprise inductive lines that are formed by conductor lines within or on top of the circuit board. If such an inductive line needs a high inductance value, the line may be realized by curved lines that may form windings of a coil.
  • the coil may be formed like a spiral or a helix and may comprise conductor sections arranged in different metallization plains of the multi-layer circuit board.
  • Further series inductance elements may be coupled in series to a resonator and may be formed as an inductive line on top of the respective substrate or within the circuit board.
  • the reactance filter having first and second piezoelectric material is part of a duplexer.
  • a duplexer comprises a transmitting filter usually called Tx filter and a reception filter (Rx filter), both filters operating in separate but usually adjoining frequency bands.
  • Tx filter transmitting filter
  • Rx filter reception filter
  • At least one of the Tx or Rx filter of the duplexer is a reactance filter as described above.
  • Both filters of the duplexer may be realized by a reactance filter as described. If there is only a small gap between the frequency bands of the Tx filter and the Rx filter the filter operating in the lower of the two frequency bands, that is usually the Tx filter, needs a steep right filter skirt. On the other side, the filter operating in the higher frequency band needs a steep filter skirt on the left side to provide enough attenuation in the respective neighbored frequency band.
  • the reactance filter of a duplexer that operates in the lower frequency band has second resonators based on a second piezoelectric material that has a greater coupling coefficient than the first piezoelectric material on which the first resonators are based.
  • the other filter of the duplexer that is the reactance filter that operates in the higher frequency band has first resonators based on a first piezoelectric material that has a greater coupling coefficient than a second piezoelectric material where the second resonators are based on.
  • a second acoustic resonator not according to the present invention, based on a second piezoelectric material showing a smaller coupling coefficient than the first piezoelectric material produces a steep skirt on the lower frequency side of the pass band of the reactance filter. If the coupling coefficient of the first piezoelectric material is chosen high enough, the reactance filter shows a sufficiently high bandwidth. Vice-versa, if the first piezoelectric material is chosen to have the smaller piezoelectric coupling coefficient, this produces a pass band having a steep skirt on the higher frequency side of the pass band.
  • the reactance filter of the duplexer is explained in more detail by a series of embodiments and accompanied schematic figures. The figures are not drawn to scale and some details may be depicted enlarged for better understanding.
  • FIG. 1 schematically shows a general block diagram of a reactance filter.
  • the filter comprises serial and parallel impedance elements SI,PI arranged in a ladder-type structure comprising a serial branch SB and a number of parallel branches PB connected thereto.
  • the serial branch SB comprises a signal line connecting terminals A and B.
  • Series impedance elements SI1 to SI3 are arranged in the series branch SB and connected in series between A and B. Between each two adjacent series impedance elements SI, one end of a parallel branch PB is connected to the series branch SB.
  • a first parallel branch PB1 comprises a parallel impedance element PI1
  • a second parallel branch PB2 comprises a second parallel impedance element PI2.
  • inventions A to C are given to provide examples for realizing the impedance element SI or PI.
  • the impedance elements SI,PI may be a resonator R only according to embodiment A, a series connection of a resonator R and a series inductance element PIN or a parallel circuit of a resonator R and a capacitive element CE according to embodiment C.
  • impedance elements may be chosen and arranged in series or in parallel branches when designing a reactance filter.
  • Series impedance elements SI defer from the parallel impedance elements PI at least by the piezoelectric material of the respective resonator. Hence, all properties that are assigned to a selected piezoelectric material are different in the first and second resonators which represent or are part of the respective impedance element SI, PI. Most important for the desired property of the reactance filter is the coupling coefficient of the piezoelectric material which should best be substantially different in both types of impedance elements. It is advantageous to select a high coupling piezoelectric material and a low coupling piezoelectric material for realizing first and second resonators. Lithium tantalate 42° rotXY may be chosen as a low coupling substrate.
  • This piezoelectric material can be combined with a high coupling substrate, for example with a lithium niobate 41° rotXY or 64° rotXY. These both lithium niobate materials show a relatively high coupling coefficient and thus provide a high coupling.
  • the first resonators of the Tx reactance filter are chosen from a low coupling material that is from the mentioned lithium tantalate.
  • the second resonators of the second impedance elements of the Tx filter are chosen from the above-mentioned lithium niobate.
  • Such a Tx filter complies with the required specifications of band 28.
  • a filter of about 6% relative bandwidth can be designed according to the above-mentioned example using said two different piezoelectric materials for the first and second resonators.
  • the designed Tx filter is able to keep a band distance of 10 MHz and thus, provides a necessary attenuation in the Rx band.
  • first and second resonators have to show different couplings.
  • all measures that affect the coupling in a desired direction can be applied within a reactance filter of the mentioned kind.
  • PI enhances the coupling of the resonator.
  • a parallel circuit of a resonator R and a capacitive element CE results in an impedance element wherein the coupling of the resonator R is reduced.
  • Such a circuit can be used for the first impedance elements when the reactance filter is used as a Tx filter operating in the lower frequency band with regard to the Rx frequency band.
  • the series circuit of inductance element and resonator can be then used for designing the second impedance elements.
  • FIG. 2 shows a reactance filter of a ladder-type structure which is not according to the present invention, where first resonators R1 and second resonators R2 are used as impedance elements.
  • first resonators R1 and second resonators R2 are used as impedance elements.
  • four first resonators R1 are arranged within the series branch SB connecting points A and B.
  • a parallel branch PB is coupled to the serial branch SB such that in total three parallel branches PB1 to PB3 are present.
  • Each parallel branch PB connects the serial branch SB and a ground potential.
  • Each resonator is embodied as a resonator working with acoustic waves such as a SAW resonator or BAW resonator or a resonators working with guided bulk acoustic waves (GBAW).
  • First and second resonators may be manufactured using the same resonator technology. But it is possible, too, to use a first technology for the first resonators and a second technology for the second resonators.
  • BAW resonators for example, can preferably be used for first resonators for showing a smaller coupling than SAW resonators.
  • FIG. 3 schematically shows a ladder-type structure of serial and parallel impedance elements SI and PI.
  • the figure shows a variation of the ground connection of the parallel branches.
  • the ground sided ends of the parallel branches are interconnected on the second substrate and then coupled to ground potential by a common ground line. This ground connection can be done with a low inductance using short and small conductor lines.
  • FIG. 4 shows an example where, different to the example of FIG. 3 , the ground connection is done via a series inductance element PIN1.
  • Such an inductance element can shift the resonant pole of the parallel branches.
  • FIG. 5 shows an example where three serial impedance elements SI1 and three parallel impedance elements PI1 to PI3 are arranged in a ladder-type structure.
  • Two of the parallel branches with the second impedance elements PI1 and PI2 are interconnected at their ground sides and coupled to ground via a series inductance element PIN1.
  • the remaining second impedance element PI3 is separately connected to ground via another series inductance element PIN2.
  • the two inductance elements PIN1 and PIN2 are of the same inductance value, two different poles can be created which are shifted relative to a ladder-type structure without the inductance elements to the higher frequency side. Choosing two series inductance elements PIN1 and PIN2 of different inductance value can further shift the respective poles.
  • FIG. 6 the separation of serial and parallel impedance elements SI,PI, respectively first and second resonators on different substrates S1, S2 is shown.
  • the figure shows how electrical connections between first and second substrate S1, S2, respectively between serial branch SB and parallel branches PB, can be done via the circuit board PCB.
  • On the first substrate S1, four first resonators are arranged within a serial branch SB. Between each two first resonators R1, a first bonding pad BP1 is situated. At both ends of the serial branch, a further bonding pad BP1 is present, respectively.
  • the first bonding pads BP1 are for connecting the parallel branches PB to the serial branch SB as well as for connecting the reactance filter to input and output.
  • three parallel branches PB1, PB2 and PB3 are arranged, each comprising a second bonding pad BP2 connected to a second resonator R2 each.
  • the ground connection for the three parallel PB is not shown as this may be done in different ways.
  • First substrate S1 and second substrate S2 comprise different piezoelectric material PM. If a resonator is construed in SAW technology, the piezoelectric material PM may form the substrate S. If one type of first and second resonator is realized as a BAW resonator, the respective substrate S may be a mechanically rigid carrier material onto which the BAW resonators are formed by depositing a first electrode E1, a layer of piezoelectric material PM and a second electrode E2. The electrodes E1, E2 may extend to respective bonding pads. But resonator technology and substrate material can be chosen independently for first and second substrate.
  • first and second substrate are indicated as broken lines. They are preferably realized via the circuit board PCB.
  • the circuit board PCB provides first connection pads CP1 to be connected with first bonding pads BP1 on the first substrate S1 as well as second connection pads CP2 to be connected with second bonding pads BP2 on the second substrate S2.
  • Each first and second connection pad CP1, CP2 are connected via a connection line CL.
  • connection pads are to be connected with input and output of the serial branch SB and thus are not connected to a connection line CL. Then, electrical and mechanical connection between mutually assigned pads is done by a solder process where in first and second substrate are soldered via their connection pads and bonding pads such that first and second substrate are mounted on the circuit board PCB. The connection may also be done via stud bumps needing no solder.
  • the circuit board is preferably a multi-layer board made from an organic laminate or from a multi-layer ceramic-like HTCC (High-Temperature Co-fired Ceramics) or LTCC (Low-Temperature Co-fired Ceramics).
  • connection pads that must be arranged on top of the circuit board PCB there may be further metallizations within the circuit board that is between two isolating layers.
  • passive elements may be formed like inductors, capacitors, or resistors.
  • contacts through the circuit board PCB interconnecting different metallization layers or different conductor sections that are arranged in different metallization plains or which are connecting any metallization plain with an external contact that is a solder pad on the bottom of the circuit board PCB.
  • an impedance element comprises an inductive element or a capacitive element as shown in FIG. 1b and 1c
  • the respective passive element can be realized within the circuit board PCB.
  • the necessary respective inductance elements within the series branch SB can be realized in the circuit board, too, if further first bonding pads BP1 are inserted into the serial branch as well as an according number of first connecting pads on top of the circuit board PCB.
  • the electrical connections between two neighbored first bonding pads is then interrupted on top of the first substrate S1 that these two neighbored bonding pads may be bridged by the inductance element in the circuit board PCB.
  • Impedance elements comprising capacitive elements CE as shown in FIG.
  • the capacitive elements can be arranged by metallization plains arranged within the circuit board and connected to two neighbored first connection pads CP1 to capacitively bridge same.
  • capacitive elements are realized by transducer structures on top of first or second substrate. This is preferred if the resonators are SAW resonators comprising similar transducers.
  • the transducers used as capacitive elements and the transducers of the resonators have different pitch and hence different resonance frequencies.
  • capacitive transducers can be rotated by e.g. 90° to avoid generation of disturbing acoustic waves.
  • Series inductive elements within the parallel branches can be connected to the open end of each parallel branch and embodied by respective metallizations within the circuit board PCB.
  • curve 1 shows the transmittance curve (matrix element S21) of the bare filter according to Fig. 6 where SAW resonators are used as serial and parallel impedance elements.
  • First resonators are realized on a LT 42° substrate and second resonators are realized on a LN 41° substrate.
  • Curve 1 shows the pure acoustic behavior of the filter while curve 2 shows the behavior of the filter within a package according to Fig. 10 .
  • the package comprises as a circuit board PCB a metallized laminate or a multilayer ceramic circuit board. Inside the package two further series inductances are realized on the circuit board and connected in series to the parallel branch.
  • series inductances are build up by a combined metal deposition process comprising sputtering of a base metallization and enforcing the base metallization by a galvanic or currentless deposition process in a bath.
  • a resist structure having a thickness of at least the height of the resulting metal structure provides that a coil of exactly adjustable geometrical dimensions is achieved. This guarantees a high quality inductance having a high Q factor and an exactly dimensioned inductance value.
  • Fig. 12 shows the same curves in an enlarged view on the passband. It can be seen that a broad pass band of more than 6% relative bandwidth is achieved. The right skirt of the pass band is steep enough to show the required attenuation on the high frequency side where the Rx frequency band of band 28 is located. This means that the filter fully complies with the specification of band 28 what has never been shown before with a conventional SAW filter.
  • FIG. 7A shows a resonator embodied as a SAW resonator in a top view.
  • the resonator comprises at least an interdigital transducer that may be backed up at both ends by an acoustic reflector.
  • FIG. 7B shows the SAW resonator in a cross-sectional.
  • the piezoelectric material PM may form the substrate S on which the interdigital transducer is formed as an electrode structure.
  • FIG. 8 shows a BAW resonator in a cross-sectional view.
  • different functional layers are deposited on top of an electrically isolating substrate S.
  • a first electrode layer E1 is deposited and structured to form the bottom electrode of the BAW resonator.
  • a piezoelectric material layer PM is deposited and structured on top of the first electrode layer E1.
  • a second electrode layer is deposited and structured on top of the piezoelectric material PM to form a second electrode E2 of the resonator R.
  • FIG. 9 shows a reactance filter comprising a first and a second substrate S1, S2 mounted on top of a circuit board PCB.
  • the first substrate S1 with the first resonators is flip-chip mounted on top of the circuit board PCB by using bump technology. Thereby, electrical and mechanical contact between first bonding pads BP1 of the first substrate S1 and the first connection pad CP1 on top of the circuit board PCB is made in one step.
  • One bump connection per each pair of assigned bonding pads BP and connection pads CP is used.
  • the second substrate S2 is also flip-chip mounted using respective bumps. Thereby, second bonding pads BP2 and second connection pads CP2 can be electrically and mechanically connected in one step. It is possible to mount first and second substrate at the same time. Alternatively, the two substrates can be mounted sequentially one after the other.
  • each through single layers of the multi-layer circuit board may be laterally shifted against each other and connected by a conductor section within a metallization plane between two neighbored dielectric layers of the circuit board.
  • Solder pads SP form external electrical terminals of the reactance filter and are arranged on the bottom of the circuit board and connected to the circuitry via through contacts TK.
  • FIG. 10 shows a reactance filter where two substrates S1, S2 are encapsulated via a common cover CV that is arranged over the first and second substrate to seal to the top surface of the circuit board and to enclose between cover CV and circuit board PCB a cavity for enclosing therein the two substrates.
  • the cover may be rigid to enclose a fixed volume independently from the first and second substrate. It may be bonded to the circuit board with a layer of adhesive. If comprising a metallic material, the cover CV may be soldered to the metallization on top of the circuit board.
  • the cover may be a laminated foil which is applied on top of the circuit board and the two substrates to be in intimate contact with the backsides of the two substrates and the top surface of the circuit board.
  • the laminated foil may be a resin foil, preferably a resin foil that has some amount of an E modulus and gets some kind of sticky upon heating. This way, the foil can be adhered to the circuit board and the back surface of the substrate.
  • the laminate may be reinforced by a further layer which may comprise a metal for example.
  • a metallic layer can provide an electromagnetic shield of the reactance filter. The shield can be enhanced by contacting the metallic layer of the cover to a ground connection.
  • Alternative arrangements where a reactance filter as shown in FIG. 9 is enclosed in a casing is possible, too.
  • a rudimentary filter function is already achieved by a reactance filter comprising only one serial impedance element in the series branch and one parallel branch connected thereto comprising one parallel impedance element.
  • Such a structure is called a basic element of a reactance filter and it is preferred to serially connect two or more such basic elements to result in a reactance filter showing a reasonable amount of attenuation beside the pass band.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Claims (10)

  1. Un filtre à réactance d'un duplexeur
    - comprenant une branche série (SB) avec un certain nombre d'éléments d'impédance série (SI1 SI2, SI3) couplés en série,
    - comprenant un certain nombre de branches parallèles (PB1, PB2, PB3) connectant la branche série à la masse, chaque branche parallèle comprenant un élément d'impédance parallèle (PI1, PI2),
    - dans lequel chaque élément d'impédance série comprend un premier résonateur (R1), un circuit série d'un premier résonateur et d'un élément d'inductance série (PIN) ou d'un premier résonateur et d'un élément capacitif (CE) couplés en parallèle,
    - dans lequel chaque élément d'impédance parallèle comprend un second résonateur (R2), un circuit série d'un second résonateur et d'un élément d'inductance série (PIN), ou un second résonateur et un élément capacitif (CE) couplés en parallèle,
    - dans lequel tous les résonateurs fonctionnent avec des ondes acoustiques,
    - dans lequel chaque premier résonateur (R1) de la branche série comprend un premier matériau piézoélectrique,
    - dans lequel chaque second résonateur (R2) des branches parallèles comprend un second matériau piézoélectrique différent du premier matériau piézoélectrique,
    - dans lequel le second matériau piézoélectrique a un coefficient de couplage supérieur à celui du premier matériau piézoélectrique,
    dans lequel au moins l'un des éléments d'impédance série comprend un élément capacitif couplé en parallèle au premier résonateur.
  2. Le filtre à réactance selon la revendication 1,
    dans lequel les premiers et seconds résonateurs sont choisis indépendamment parmi des résonateurs d'ondes acoustiques de surface et des résonateurs fonctionnant avec des ondes acoustiques de volume.
  3. Le filtre à réactance selon l'une des revendications 1 et 2,
    - dans lequel les premiers et seconds résonateurs sont agencés sur des premier et second substrats (S1, S2) séparés selon le type respectif de résonateur, chaque substrat étant le matériau piézoélectrique respectif ou un support pour une couche du matériau piézoélectrique à partir duquel des résonateurs respectifs sont formés,
    - dans lequel une couche diélectrique est agencée au-dessus des premiers ou seconds résonateurs entre le substrat et une électrode du résonateur respectif ou au-dessus de l'électrode respective qui est agencée directement sur le matériau piézoélectrique.
  4. Le filtre à réactance selon l'une des revendications 1 à 3,
    dans lequel une couche diélectrique est agencée au-dessus, à la fois, des premiers et seconds résonateurs,
    dans lequel les épaisseurs de la couche diélectrique au-dessus des premiers résonateurs sont différentes de l'épaisseur de la couche diélectrique au-dessus des seconds résonateurs.
  5. Le filtre à réactance selon l'une des revendications 1 à 4,
    dans lequel les résonateurs ayant le plus grand coefficient de couplage sont réalisés sous forme de résonateurs à ondes acoustiques de surface.
  6. Le filtre à réactance selon l'une des revendications 1 à 5,
    dans lequel les premiers résonateurs (R1) sont agencés sur un premier substrat (S1) et les seconds résonateurs (R2) sont agencés sur un second substrat (S2) distinct du premier substrat,
    dans lequel les premier et second substrats sont montés sur le même circuit imprimé (PCB),
    dans lequel tous les couplages électriques entre la branche série et les branches parallèles sont réalisés par des sections conductrices qui sont formées sur le circuit imprimé.
  7. Le filtre à réactance selon la revendication 6,
    dans lequel les premier et second substrats sont agencés dans le même boîtier comprenant un capot encapsulant les premier et second substrats et se fixant à la surface supérieure du circuit imprimé.
  8. Le filtre à réactance selon la revendication 7,
    - dans lequel le premier substrat (S1) comprend un certain nombre de n premiers résonateurs (R1), n étant un nombre entier avec 2 ≤ n ≤ 6,
    - dans lequel chaque premier résonateur est connecté entre deux premiers plots de contact (BP1) de sorte qu'au moins n+1 plots de contact soient présents,
    - dans lequel le second substrat (S2) comprend au moins un plot de contact à la masse et un certain nombre de m seconds résonateurs (R2), m étant un nombre entier avec n-1 ≤ m ≤ n+1, les seconds résonateurs étant connectés chacun entre un second plot de contact (BP2) et l'au moins un plot de contact à la masse,
    - dans lequel le circuit imprimé (PCB) comprend un certain nombre de m lignes de connexion (CL) s'étendant entre un premier et un second plot de connexion (CP1, CP2), le circuit imprimé comprenant en outre au moins un plot de connexion à la masse,
    - dans lequel chaque premier plot de contact (BP1) est couplé à un premier plot de connexion (CP1),
    - chaque second plot de contact (BP2) est couplé à un second plot de connexion (CP2),
    - dans lequel l' au moins un plot de contact à la masse est couplé à l'au moins un plot de connexion à la masse.
  9. Le filtre à réactance selon la revendication 8,
    dans lequel l'au moins un plot de connexion à la masse est connecté par l'intermédiaire d'une ligne inductive à une borne de masse du circuit imprimé.
  10. Le filtre à réactance selon l'une des revendications 1 à 9,
    dans lequel au moins un élément d'inductance série est formé sur un circuit imprimé et connecté à la branche série par l'intermédiaire d'un premier plot de contact, l'élément d'inductance série étant couplé entre deux des premiers résonateurs ou entre une borne du premier résonateur et une borne entrée ou une borne de sortie du filtre à réactance.
EP13709251.6A 2013-03-15 2013-03-15 Filtre à réactance comprenant des résonateurs d'ondes acoustiques Active EP2974013B1 (fr)

Applications Claiming Priority (1)

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PCT/EP2013/055439 WO2014139590A1 (fr) 2013-03-15 2013-03-15 Filtre à réactance comprenant des résonateurs d'ondes acoustiques

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EP2974013A1 EP2974013A1 (fr) 2016-01-20
EP2974013B1 true EP2974013B1 (fr) 2022-11-23

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EP (1) EP2974013B1 (fr)
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Also Published As

Publication number Publication date
JP6183932B2 (ja) 2017-08-23
EP2974013A1 (fr) 2016-01-20
JP2016510963A (ja) 2016-04-11
US9614494B2 (en) 2017-04-04
US20150365069A1 (en) 2015-12-17
WO2014139590A1 (fr) 2014-09-18

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