EP2966661A2 - Dreidimensionaler symmetrischer vertikaler Transformator - Google Patents

Dreidimensionaler symmetrischer vertikaler Transformator Download PDF

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Publication number
EP2966661A2
EP2966661A2 EP14196615.0A EP14196615A EP2966661A2 EP 2966661 A2 EP2966661 A2 EP 2966661A2 EP 14196615 A EP14196615 A EP 14196615A EP 2966661 A2 EP2966661 A2 EP 2966661A2
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EP
European Patent Office
Prior art keywords
wire segment
terminal
partial path
path
segment
Prior art date
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Withdrawn
Application number
EP14196615.0A
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English (en)
French (fr)
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EP2966661A3 (de
Inventor
Sih-Han Li
Chih-Sheng Lin
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Industrial Technology Research Institute ITRI
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Industrial Technology Research Institute ITRI
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Publication of EP2966661A2 publication Critical patent/EP2966661A2/de
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Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/2804—Printed windings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/2804—Printed windings
    • H01F2027/2809—Printed windings on stacked layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the disclosure relates to a transformer, and a three-dimension symmetrical vertical transformer.
  • IPDs integrated passive devices
  • FEOL front end of line
  • Inductors and transformers are commonly used passive devices in the chip, and are widely applied to various radio frequency (RF) ICs, such as, a low noise amplifier (LNA), a voltage-controlled oscillator (VCO), an injection-locked frequency divider (ILFD), a power amplifier (PA), etc.
  • RF radio frequency
  • LNA low noise amplifier
  • VCO voltage-controlled oscillator
  • ILFD injection-locked frequency divider
  • PA power amplifier
  • Packaging technology has been developed from thin small outline packaging (TSOP), chip scale package (CSP), wafer level package (WLP), etc. to stacked package on package (PoP).
  • Design of a semiconductor circuit often encounters a bottleneck, for example, an analog circuit and a digital circuit are not easy to be integrated through a system on chip (SoC) process, or even if the analog circuit and the digital circuit are integrated to the SoC, problems of high cost and being unable to achieve characteristic optimisation are encountered.
  • SoC system on chip
  • SiP System in package
  • SiP can integrate different devices through a packaging technique. However, when packaging requirements become more complicated, the SiP technique also has a design bottleneck related to operation speed, power consumption, size, etc.
  • a three-dimension integrated circuit (3DIC) technique can effectively increase product performance, reduce power consumption, cost, volume and integrate heterogeneous ICs.
  • the 3DIC technique can be regarded as another solution of the SoC and SiP techniques.
  • chips with different functional properties or even different substrates can be respectively manufactured through most suitable manufacturing processes thereof, and then a through silicon via (TSV) technique is used to implement 3D stacking for integration.
  • TSV through silicon via
  • the 3DIC technique is not only capable of reducing a length of a metal wire and reducing a wiring resistance, but is also capable of reducing a chip area, and has advantages of small volume, high integration, high efficiency, low power consumption and low cost.
  • fabrication of circuit or system of different chip layers is generally completed through themost suitable FEOL (the IC manufacturing process).
  • the different chip layers are stacked to each other through TSV, bumps and re-distributed layer (RDL) to implement a stacking step of a back end of line (BEOL) (the packaging process).
  • RDL re-distributed layer
  • BEOL back end of line
  • a circuit structure In order reduce a common mode noise, a circuit structure is generally designed to a differential type to increase a differential gain and suppress a common mode noise gain. In this way, the IPDs usually place emphasis on a symmetrical structure to cope with a demand of the differential type. If a transformer adopts the differential type, the symmetrical structure thereof is further emphasized, so as to achieve better differential operation characteristics.
  • the disclosure is directed to a transformer, by which a three-dimension symmetrical vertical transformer is implemented.
  • the transformer can be applied to a signal vertical coupling transmission between different chips.
  • the aforementioned transformer can save chip area.
  • An embodiment of the disclosure provides a transformer including a primary coil and a secondary coil.
  • the primary coil includes a first electrical path and a second electrical path respectively located at different sides of a symmetry line on a projection plane of the transformer.
  • First terminals of the first electrical path and the second electrical path respectively serve as a first port and a second port of the primary coil.
  • a second terminal of the first electrical path is connected to a second terminal of the second electrical path at the symmetry line.
  • the first electrical path includes a first partial path disposed on a first substrate and a second partial path disposed on a second substrate.
  • the first partial path and the second partial path are connected to each other by at least one through silicon via (TSV).
  • TSV through silicon via
  • the second electrical path includes a third partial path disposed on the first substrate and a fourth partial path disposed on the second substrate.
  • the third partial path and the fourth partial path are connected to each other by at least one TSV.
  • the secondary coil includes a third electrical path and a fourth electrical path respectively located at different sides of the symmetry line on the projection plane. First terminals of the third electrical path and the fourth electrical path respectively serve as a first port and a second port of the secondary coil. A second terminal of the third electrical path is connected to a second terminal of the fourth electrical path at the symmetry line.
  • the third electrical path includes a fifth partial path disposed on the first substrate and a sixth partial path disposed on the second substrate. The fifth partial path and the sixth partial path are connected to each other by at least one TSV.
  • the fourth electrical path includes a seventh partial path disposed on the first substrate and an eighth partial path disposed on the second substrate. The seventh partial path and the eighth partial path are connected to each other by at least one TSV.
  • the TSV vertical paths and planar paths of different substrates are used to implement the symmetrical transformer (for example, a three-dimension (3D) symmetrical vertical N:1 transformer or a 3D symmetrical 1:1 transformer). Therefore, the aforementioned transformer can save chip area. Moreover, the aforementioned transformer can be applied to vertical signal coupling transmission between different chips.
  • the symmetrical transformer for example, a three-dimension (3D) symmetrical vertical N:1 transformer or a 3D symmetrical 1:1 transformer. Therefore, the aforementioned transformer can save chip area. Moreover, the aforementioned transformer can be applied to vertical signal coupling transmission between different chips.
  • a term "couple” used in the full text of the disclosure refers to any direct and indirect connections. For example, if a first device is described to be coupled to a second device, it is interpreted as that the first device is directly coupled to the second device, or the first device is indirectly coupled to the second device through other devices or connection means.
  • components/members/steps using the same referential numbers in the drawings and description refer to the same or like parts. Components/members/steps using the same referential numbers or using the same terms in different embodiments may cross-refer related descriptions.
  • FIG. 1 is a circuit schematic diagram of a transformer 100 according to an embodiment of the disclosure.
  • the transformer 100 includes a primary coil 110 and a secondary coil 120. Based on transmission of an induced magnetic field, the primary coil 110 and the secondary coil 120 can transit electric energy to each other. For example, electric energy at a first port Port1 and a second port Port2 of the primary coil 110 can be transmitted to a first port port3 and a second port Port2 of the secondary coil 120. By determining a ratio between a winding turns of the primary coil 110 and a winding turns of the secondary coil 120, a voltage ratio between the primary coil 110 and the secondary coil 120 is set.
  • the primary coil can be a primary side coil
  • the secondary coil can be a secondary side coil.
  • one or a plurality of coils all meet the spirit of the disclosure.
  • FIG. 2 is a three-dimensional perspective view of a layout structure of the transformer 100 of FIG. 1 according to an embodiment of the disclosure.
  • FIG. 3 is an assembling schematic diagram of the layout structure of the transformer 100 of FIG. 2 according to an embodiment of the disclosure.
  • FIG. 4 is a schematic diagram of a vertical projection of the layout structure of the transformer 100 of FIG. 2 according to an embodiment of the disclosure.
  • the transformer 100 includes the primary coil 110 and the secondary coil 120.
  • the primary coil 110 includes a first electrical path 210 and a second electrical path 220.
  • the first electrical path 210 and the second electrical path 220 are respectively located at different sides of a symmetry line 250 on a projection plane (shown in FIG. 4 ) of the transformer 100.
  • a first terminal of the first electrical path 210 and a first terminal of the second electrical path 220 respectively serve as the first port Port1 and the second port Port2 of the primary coil 110.
  • a second terminal of the first electrical path 210 is connected to a second terminal of the second electrical path 220 at the symmetry line 250.
  • the first electrical path 210 and the second electrical path 220 are symmetric relative to the symmetry line 250, as shown in FIG. 4 .
  • the first electrical path 210 includes a first partial path 211 disposed on a first substrate 260 and a second partial path 212 disposed on a second substrate 270.
  • the first partial path 211 and the second partial path 212 are connected to each other by at least one through silicon via (TSV).
  • TSV through silicon via
  • the second electrical path 220 includes a third partial path 221 disposed on the first substrate 260 and a fourth partial path 222 disposed on the second substrate 270.
  • the third partial path 221 and the fourth partial path 222 are connected to each other by at least one TSV.
  • the secondary coil 120 includes a third electrical path 230 and a fourth electrical path 240.
  • the third electrical path 230 and the fourth electrical path 240 are respectively located at different sides of the symmetry line 250 on the projection plane (shown in FIG. 4 ).
  • a first terminal of the third electrical path 230 and a first terminal of the fourth electrical path 240 respectively serve as a first port Port3 and a second port Port4 of the secondary coil 120.
  • a second terminal of the third electrical path 230 is connected to a second terminal of the fourth electrical path 240 at the symmetry line 250.
  • the third electrical path 230 and the fourth electrical path 240 are symmetric relative to the symmetry line 250, as shown in FIG. 4 .
  • the third electrical path 230 includes a fifth partial path 231 disposed on the first substrate 260 and a sixth partial path 232 disposed on the second substrate 270.
  • the fifth partial path 231 and the sixth partial path 232 are connected to each other by at least one TSV.
  • the fourth electrical path 240 includes a seventh partial path 241 disposed on the first substrate 260 and an eighth partial path 242 disposed on the second substrate 270.
  • the seventh partial path 241 and the eighth partial path 242 are connected to each other by at least one TSV.
  • the layout structure of the transformer 100 can be applied to any type of integrated circuit (IC) having TSVs.
  • the layout structure of the transformer 100 can be applied to chip stacking having two chip-layers (or more chip-layers).
  • the first substrate 260 and the second substrate 270 can be different chips in a three-dimensional (3D) chip stacking structure.
  • the first partial path 211, the third partial path 221, the fifth partial path 231 and the seventh partial path 241 can be allocated to a re-distributed layer (RDL) on the first substrate 260 (an upper layer chip), and the second partial path 212, the fourth partial path 222, the sixth partial path 232 and the eighth partial path 242 can be allocated to a RDL of the second substrate 270 (a lower layer chip).
  • RDL re-distributed layer
  • the layout structure of the transformer 100 can be applied to a single layer chip.
  • the first substrate 260 and the second substrate 270 can be different RDLs in a same chip. It is assumed that the first substrate 260 and the second substrate 270 are respectively a first RDL (for example, an upper RDL) and a second RDL (for example, a lower RDL) in the same chip.
  • the first partial path 211, the third partial path 221, the fifth partial path 231 and the seventh partial path 241 can be allocated to the first RDL in the same chip
  • the second partial path 212, the fourth partial path 222, the sixth partial path 232 and the eighth partial path 242 can be allocated to the second RDL in the same chip.
  • a current direction of the first partial path 211 is a first direction along the symmetry line 250
  • a current direction of the second partial path 212 is a second direction along the symmetry line 250
  • a current direction of the third partial path 221 is the second direction
  • a current direction of the fourth partial path 222 is the first direction.
  • the first direction is different to the second direction, for example, the first direction is inversed to the second direction.
  • a current direction of the fifth partial path 231 is the first direction
  • a current direction of the sixth partial path 232 is the second direction
  • a current direction of the seventh partial path 241 is the second direction
  • a current direction of the eighth partial path 242 is the first direction.
  • the first partial path 211 of the primary coil 110 includes a first wire segment 211_1 and a second wire segment 211_2, and the second partial path 212 of the primary coil 110 includes a third wire segment 212_1.
  • a first terminal of the first wire segment 211_1 serves as the first port Port1 of the primary coil 110.
  • a second terminal of the first wire segment 211_1 is connected to a first terminal of the third wire segment 212_1 through a first TSV 301.
  • a second terminal of the third wire segment 212_1 is connected to a first terminal of the second wire segment 211_2 through a second TSV 302.
  • the first wire segment 211_1 is a bendable line segment
  • the second wire segment 211_2 is a half of a U-shape line segment presenting a shape of "L”
  • the third wire segment 212_1 is a straight line segment.
  • the third partial path 221 of the primary coil 110 includes a fourth wire segment 221_1 and a fifth wire segment 221_2, and the fourth partial path 222 of the primary coil 110 includes a sixth wire segment 222_1.
  • a first terminal of the fourth wire segment 221_1 serves as the second port Port2 of the primary coil 110.
  • a second terminal of the fourth wire segment 221_1 is connected to a first terminal of the sixth wire segment 222_1 through a third TSV 303.
  • a second terminal of the sixth wire segment 222_1 is connected to a first terminal of the fifth wire segment 221_2 through a fourth TSV 304.
  • a second terminal of the fifth wire segment 221_2 is connected to a second terminal of the second wire segment 211_2 at the symmetry line 250.
  • the fourth wire segment 221_1 is a bendable line segment
  • the fifth wire segment 221_2 is a half of the U-shape line segment presenting a shape of "L" and is connected to the second wire segment 211_2 to present the U-shape line segment
  • the sixth wire segment 222_1 is a straight line segment.
  • the fifth wire segment 221_2 can be connected to the second wire segment 211_2 to present the U-shape line segment.
  • the fifth partial path 231 of the secondary coil 120 includes a first wire segment 231_1, and the sixth partial path 232 includes a second wire segment 232_1.
  • a first terminal of the first wire segment 231_1 serves as the first port Port3 of the secondary coil 120.
  • a second terminal of the first wire segment 231_1 is connected to a first terminal of the second wire segment 232_1 through a first TSV 305.
  • the seventh partial path 241 of the secondary coil 120 includes a third wire segment 241_1, and the eighth partial path 242 includes a fourth wire segment 242_1.
  • a first terminal of the third wire segment 241_1 serves as the second port Port4 of the secondary coil 120.
  • a second terminal of the third wire segment 241_1 is connected to a first terminal of the fourth wire segment 242_1 through a first TSV 306.
  • a second terminal of the fourth wire segment 242_1 is connected to a second terminal of the second wire segment 232_1.
  • the first wire segment 231_1 is a bendable line segment
  • the second wire segment 232_1 is a half of a U-shape line segment presenting a shape of "L”.
  • the third wire segment 241_1 is a bendable line segment
  • the fourth wire segment 242_1 is a half of the U-shape line segment presenting a shape of "L” and is connected to the second wire segment 232_1 to present the U-shape line segment.
  • the first wire segment 231_1 is configured between the first wire segment 211_1 and the second wire segment 211_2, and the third wire segment 241_1 is configured between the fourth wire segment 221_1 and the fifth wire segment 221_2.
  • the second wire segment 232_1 is connected to the fourth wire segment 242_1 to form the U-shape line segment, and the U-shape line segment formed by connecting the second wire segment 232_1 and the fourth wire segment 242_1 is configured between the third wire segment 212_1 and the sixth wire segment 222_1.
  • a system circuit In order to decrease a common mode noise, a system circuit is generally designed into a differential type to increase a differential gain and suppress a common mode noise gain thereof.
  • integrated passive devices IPDs usually place emphasis on a symmetrical structure to cope with the differential signal.
  • the symmetry line 250 is taken as a center line of the transformer, regions to the left and right of the symmetry line 250 have a mirror symmetric layout, so that the 3D symmetrical vertical transformer 100 of a 3DIC of the present embodiment has good structural symmetry. Therefore, the transformer 100 is adapted to a circuit design of a differential structure.
  • a turns ratio between the primary coil 110 and the secondary coil 120 is 2:1, so that the transformer 100 shown in FIG.
  • the transformer 100 can save chip area. Moreover, the transformer 100 can be applied to vertical signal coupling transmission between different chips.
  • FIG. 5 is an assembling schematic diagram of the layout structure of the transformer 100 of FIG. 1 according to another embodiment of the disclosure.
  • FIG. 6 is a schematic diagram of a vertical projection of the layout structure of the transformer 100 of FIG. 5 according to an embodiment of the disclosure.
  • the transformer 100 includes the primary coil 110 and the secondary coil 120.
  • the primary coil 110 includes a first electrical path 510 and a second electrical path 520.
  • the first electrical path 510 and the second electrical path 520 are respectively located at different sides of a symmetry line 550 on a projection plane (shown in FIG. 6 ) of the transformer 100.
  • a first terminal of the first electrical path 510 and a first terminal of the second electrical path 520 respectively serve as the first port Port1 and the second port Port2 of the primary coil 110.
  • a second terminal of the first electrical path 510 is connected to a second terminal of the second electrical path 520 at the symmetry line 550.
  • the first electrical path 510 and the second electrical path 520 are symmetric relative to the symmetry line 550, as shown in FIG. 6 .
  • the secondary coil 120 includes a third electrical path 530 and a fourth electrical path 540.
  • the third electrical path 530 and the fourth electrical path 540 are respectively located at different sides of the symmetry line 550 on the projection plane (shown in FIG. 6 ).
  • a first terminal of the third electrical path 530 and a first terminal of the fourth electrical path 540 respectively serve as the first port Port3 and the second port Port4 of the secondary coil 120.
  • a second terminal of the third electrical path 530 is connected to a second terminal of the fourth electrical path 540 at the symmetry line 550.
  • the third electrical path 530 and the fourth electrical path 540 are symmetric relative to the symmetry line 550, as shown in FIG. 6 .
  • the transformer 100, the first electrical path 510, the second electrical path 520, the third electrical path 530 and the fourth electrical path 540 shown in FIG. 5 and FIG. 6 can be deduced according to related description of the transformer 100, the first electrical path 210, the second electrical path 220, the third electrical path 230 and the fourth electrical path 240 shown in FIG. 2 to FIG. 4 , and details thereof are not repeated.
  • the first electrical path 510 includes a first partial path 511 disposed on the first substrate 260 and a second partial path 512 disposed on the second substrate 270.
  • the second electrical path 520 includes a third partial path 521 disposed on the first substrate 260 and a fourth partial path 522 disposed on the second substrate 270.
  • the third electrical path 530 includes a fifth partial path 531 disposed on the first substrate 260 and a sixth partial path 532 disposed on the second substrate 270.
  • the fourth electrical path 540 includes a seventh partial path 541 disposed on the first substrate 260 and an eighth partial path 542 disposed on the second substrate 270.
  • the first partial path 511, the third partial path 521, the fifth partial path 531 and the seventh partial path 541 are allocated to a RDL on the first substrate 260 (the upper layer chip), and the second partial path 512, the fourth partial path 522, the sixth partial path 532 and the eighth partial path 542 are allocated to a RDL of the second substrate 270 (the lower layer chip).
  • the first partial path 511 of the primary coil 110 includes a first wire segment 511_1, a second wire segment 511_2 and a third wire segment 511_3, and the second partial path 512 of the primary coil 110 includes a fourth wire segment 512_1 and a fifth wire segment 512_2.
  • a first terminal of the first wire segment 511_1 serves as the first port Port1 of the primary coil 110.
  • a second terminal of the first wire segment 511_1 is connected to a first terminal of the fourth wire segment 512_1 through a first TSV 581.
  • a second terminal of the fourth wire segment 512_1 is connected to a first terminal of the second wire segment 511_2 through a second TSV 582.
  • a second terminal of the second wire segment 511_2 is connected to a first terminal of the fifth wire segment 512_2 through a third TSV 583.
  • a second terminal of the fifth wire segment 512_2 is connected to a first terminal of the third wire segment 511_3 through a fourth TSV 584.
  • the first wire segment 511_1 is a bendable line segment
  • the second wire segment 511_2 is a U-shape line segment
  • the third wire segment 511_3 is a half of a U-shape line segment presenting a shape of "L”
  • the fourth wire segment 512_1 and the fifth wire segment 512_2 are straight line segments.
  • the third partial path 521 of the primary coil 110 includes a sixth wire segment 521_1, a seventh wire segment 521_2 and an eighth wire segment 521_3, and the fourth partial path 522 of the primary coil 110 includes a ninth wire segment 522_1 and a tenth wire segment 522_2.
  • a first terminal of the sixth wire segment 521_1 serves as the second port Port2 of the primary coil 110.
  • a second terminal of the sixth wire segment 521_1 is connected to a first terminal of the ninth wire segment 522_1 through a fifth TSV 585.
  • a second terminal of the ninth wire segment 522_1 is connected to a first terminal of the seventh wire segment 521_2 through a sixth TSV 586.
  • a second terminal of the seventh wire segment 521_2 is connected to a first terminal of the tenth wire segment 522_2 through a seventh TSV 587.
  • a second terminal of the tenth wire segment 522_2 is connected to a first terminal of the eighth wire segment 521_3 through an eighth TSV 588.
  • a second terminal of the eighth wire segment 521_3 is connected to the second terminal of the third wire segment 511_3 at the symmetry line 550.
  • the sixth wire segment 521_1 is a bendable line segment
  • the seventh wire segment 521_2 is a U-shape line segment
  • the eighth wire segment 521_3 is a half of the U-shape line segment presenting a shape of "L”
  • the ninth wire segment 522_1 and the tenth wire segment 522_2 are straight line segments.
  • the eighth wire segment 521_3 can be connected to the third wire segment 511_3 to present the U-shape line segment.
  • the fifth partial path 531 of the secondary coil 120 includes a first wire segment 531_1, and the sixth partial path 532 includes a second wire segment 532_1.
  • a first terminal of the first wire segment 531_1 serves as the first port Port3 of the secondary coil 120.
  • a second terminal of the first wire segment 531_1 is connected to a first terminal of the second wire segment 532_1 through a first TSV 589.
  • the seventh partial path 541 of the secondary coil 120 includes a third wire segment 541_1, and the eighth partial path 542 includes a fourth wire segment 542_1.
  • a first terminal of the third wire segment 541_1 serves as the second port Port4 of the secondary coil 120.
  • a second terminal of the third wire segment 541_1 is connected to a first terminal of the fourth wire segment 542_1 through a second TSV 590.
  • a second terminal of the fourth wire segment 542_1 is connected to a second terminal of the second wire segment 532_1.
  • the first wire segment 531_1 is a bendable line segment
  • the second wire segment 532_1 is a half of a U-shape line segment presenting a shape of "L”.
  • the third wire segment 541_1 is a bendable line segment
  • the fourth wire segment 542_1 is a half of the U-shape line segment presenting a shape of "L” and is connected to the second wire segment 532_1 to present the U-shape line segment.
  • the first wire segment 531_1 is configured between the second wire segment 511_2 and the third wire segment 511_3, and the third wire segment 541_1 is configured between the seventh wire segment 521_2 and the eighth wire segment 521_3.
  • the second wire segment 532_1 is connected to the fourth wire segment 542_1 to form the U-shape line segment, and the U-shape line segment formed by connecting the second wire segment 532_1 and the fourth wire segment 542_1 is configured between the fifth wire segment 512_2 and the tenth wire segment 522_2.
  • the transformer 100 of FIG. 5 to FIG. 6 is adapted to a circuit design of a differential structure.
  • a turns ratio between the primary coil 110 and the secondary coil 120 is 3:1, so that the transformer 100 shown in FIG. 5 to FIG. 6 is a transformer with the turns ratio of 3:1.
  • the TSV vertical paths and planar paths of different substrates (chips) in the 3DIC manufacturing process are used to implement the symmetrical transformer 100. Therefore, the transformer 100 can save chip area. Moreover, the transformer 100 can be applied to vertical signal coupling transmission between different chips.
  • FIG. 7 is an assembling schematic diagram of the layout structure of the transformer 100 of FIG. 1 according to still another embodiment of the disclosure.
  • FIG. 8 is a schematic diagram of a vertical projection of the layout structure of the transformer 100 of FIG. 7 according to an embodiment of the disclosure.
  • the transformer 100 includes the primary coil 110 and the secondary coil 120.
  • the primary coil 110 includes a first electrical path 710 and a second electrical path 720.
  • the first electrical path 710 and the second electrical path 720 are respectively located at different sides of a symmetry line 750 on a projection plane (shown in FIG. 8 ) of the transformer 100.
  • a first terminal of the first electrical path 710 and a first terminal of the second electrical path 720 respectively serve as the first port Port1 and the second port Port2 of the primary coil 110.
  • a second terminal of the first electrical path 710 is connected to a second terminal of the second electrical path 720 at the symmetry line 750.
  • the first electrical path 710 and the second electrical path 720 are symmetric relative to the symmetry line 750, as shown in FIG. 8 .
  • the secondary coil 120 includes a third electrical path 730 and a fourth electrical path 740.
  • the third electrical path 730 and the fourth electrical path 740 are respectively located at different sides of the symmetry line 750 on the projection plane (shown in FIG. 8 ).
  • a first terminal of the third electrical path 730 and a first terminal of the fourth electrical path 740 respectively serve as the first port Port3 and the second port Port4 of the secondary coil 120.
  • a second terminal of the third electrical path 730 is connected to a second terminal of the fourth electrical path 740 at the symmetry line 750.
  • the third electrical path 730 and the fourth electrical path 740 are symmetric relative to the symmetry line 750, as shown in FIG. 8 .
  • the transformer 100, the first electrical path 710, the second electrical path 720, the third electrical path 730 and the fourth electrical path 740 shown in FIG. 7 and FIG. 8 can be deduced according to related description of the transformer 100, the first electrical path 210, the second electrical path 220, the third electrical path 230 and the fourth electrical path 240 shown in FIG. 2 to FIG. 4 , and details thereof are not repeated.
  • the first electrical path 710 includes a first partial path 711 disposed on the first substrate 260 and a second partial path 712 disposed on the second substrate 270.
  • the second electrical path 720 includes a third partial path 721 disposed on the first substrate 260 and a fourth partial path 722 disposed on the second substrate 270.
  • the third electrical path 730 includes a fifth partial path 731 disposed on the first substrate 260 and a sixth partial path 732 disposed on the second substrate 270.
  • the fourth electrical path 740 includes a seventh partial path 741 disposed on the first substrate 260 and an eighth partial path 742 disposed on the second substrate 270.
  • the first partial path 711, the third partial path 721, the fifth partial path 731 and the seventh partial path 741 are allocated to a RDL on the first substrate 260 (the upper layer chip), and the second partial path 712, the fourth partial path 722, the sixth partial path 732 and the eighth partial path 742 are allocated to a RDL of the second substrate 270 (the lower layer chip).
  • the first partial path 711 of the primary coil 110 includes a first wire segment 711_1, a second wire segment 711_2, a third wire segment 711_3 and a fourth wire segment 711_4, and the second partial path 712 of the primary coil 110 includes a fifth wire segment 712_1, a sixth wire segment 712_2 and a seventh wire segment 712_3.
  • a first terminal of the first wire segment 711_1 serves as the first port Port1 of the primary coil 110.
  • a second terminal of the first wire segment 711_1 is connected to a first terminal of the fifth wire segment 712_1 through a first TSV 781.
  • a second terminal of the fifth wire segment 712_1 is connected to a first terminal of the second wire segment 711_2 through a second TSV 782.
  • a second terminal of the second wire segment 711_2 is connected to a first terminal of the sixth wire segment 712_2 through a third TSV 783.
  • a second terminal of the sixth wire segment 712_2 is connected to a first terminal of the third wire segment 711_3 through a fourth TSV 784.
  • a second terminal of the third wire segment 711_3 is connected to a first terminal of the seventh wire segment 712_3 through a fifth TSV 785.
  • a second terminal of the seventh wire segment 712_3 is connected to a first terminal of the fourth wire segment 711_4 through a sixth TSV 786.
  • the first wire segment 711_1 is a bendable line segment
  • the second wire segment 711_2 and the third wire segment 711_3 are U-shape line segments
  • the fourth wire segment 711_4 is a half of a U-shape line segment presenting a shape of "L”
  • the fifth wire segment 712_1, the sixth wire segment 712_2 and the seventh wire segment 712_3 are straight line segments.
  • the third partial path 721 of the primary coil 110 includes an eighth wire segment 721_1, a ninth wire segment 721_2, a tenth wire segment 721_3 and an eleventh wire segment 721_6, and the fourth partial path 722 of the primary coil 110 includes a twelfth wire segment 722_1, a thirteenth wire segment 722_2 and a fourteenth wire segment 722_3.
  • a first terminal of the eighth wire segment 721_1 serves as the second port Port2 of the primary coil 110.
  • a second terminal of the eighth wire segment 721_1 is connected to a first terminal of the twelfth wire segment 722_1 through a seventh TSV 787.
  • a second terminal of the twelfth wire segment 722_1 is connected to a first terminal of the ninth wire segment 721_2 through an eighth TSV 788.
  • a second terminal of the ninth wire segment 721_2 is connected to a first terminal of the thirteenth wire segment 722_2 through a ninth TSV 789.
  • a second terminal of the thirteenth wire segment 722_2 is connected to a first terminal of the tenth wire segment 721_3 through a tenth TSV 790.
  • a second terminal of the tenth wire segment 721_3 is connected to a first terminal of the fourteenth wire segment 722_3 through an eleventh TSV 791.
  • a second terminal of the fourteenth wire segment 722_3 is connected to a first terminal of the eleventh wire segment 721_4 through a twelfth TSV 792.
  • a second terminal of the eleventh wire segment 721_4 is connected to the second terminal of the fourth wire segment 711_4 at the symmetry line 750.
  • the eighth wire segment 721_1 is a bendable line segment
  • the ninth wire segment 721_2 and the tenth wire segment 721_3 are U-shape line segments
  • the eleventh wire segment 721_4 is a half of the U-shape line segment presenting a shape of "L”
  • the twelfth wire segment 722_1 the thirteenth wire segment 722_2 and the fourteenth wire segment 722_3 are straight line segments.
  • the eleventh wire segment 721_4 can be connected to the fourth wire segment 711_4 to present the U-shape line segment.
  • the fifth partial path 731 of the secondary coil 120 includes a first wire segment 731_1, and the sixth partial path 732 includes a second wire segment 732_1.
  • a first terminal of the first wire segment 731_1 serves as the first port Port3 of the secondary coil 120.
  • a second terminal of the first wire segment 731_1 is connected to a first terminal of the second wire segment 732_1 through a first TSV 793.
  • the seventh partial path 741 of the secondary coil 120 includes a third wire segment 741_1, and the eighth partial path 742 of the secondary coil 120 includes a fourth wire segment 742_1.
  • a first terminal of the third wire segment 741_1 serves as the second port Port4 of the secondary coil 120.
  • a second terminal of the third wire segment 741_1 is connected to a first terminal of the fourth wire segment 742_1 through a second TSV 794.
  • a second terminal of the fourth wire segment 742_1 is connected to a second terminal of the second wire segment 732_1.
  • the first wire segment 731_1 is a bendable line segment
  • the second wire segment 732_1 is a half of a U-shape line segment presenting a shape of "L”.
  • the third wire segment 741_1 is a bendable line segment
  • the fourth wire segment 742_1 is a half of the U-shape line segment presenting a shape of "L” and is connected to the second wire segment 732_1 to present the U-shape line segment.
  • the first wire segment 731_1 is configured between the third wire segment 711_3 and the fourth wire segment 711_4, and the third wire segment 741_1 is configured between the tenth wire segment 721_3 and the eleventh wire segment 721_4.
  • the second wire segment 732_1 is connected to the fourth wire segment 742_1 to form the U-shape line segment, and the U-shape line segment formed by connecting the second wire segment 732_1 and the fourth wire segment 742_1 is configured between the seventh wire segment 712_3 and the fourteenth wire segment 722_3.
  • the transformer 100 of FIG. 7 to FIG. 8 is adapted to a circuit design of a differential structure.
  • a turns ratio between the primary coil 110 and the secondary coil 120 is 4:1, so that the transformer 100 shown in FIG. 7 to FIG. 8 is a transformer with the turns ratio of 4:1.
  • the TSV vertical paths and planar paths of different substrates (chips) in the 3DIC manufacturing process are used to implement the symmetrical transformer 100. Therefore, the transformer 100 can save chip area. Moreover, the transformer 100 can be applied to vertical signal coupling transmission between different chips.
  • FIG. 9 is an assembling schematic diagram of the layout structure of the transformer 100 of FIG. 1 according to yet another embodiment of the disclosure.
  • FIG. 10 is a schematic diagram of a vertical projection of the layout structure of the transformer 100 of FIG. 9 according to an embodiment of the disclosure.
  • the transformer 100 includes the primary coil 110 and the secondary coil 120.
  • the primary coil 110 includes a first electrical path 910 and a second electrical path 920.
  • the first electrical path 910 and the second electrical path 920 are respectively located at different sides of a symmetry line 950 on a projection plane (shown in FIG. 10 ) of the transformer 100.
  • a first terminal of the first electrical path 910 and a first terminal of the second electrical path 920 respectively serve as the first port Port1 and the second port Port2 of the primary coil 110.
  • a second terminal of the first electrical path 910 is connected to a second terminal of the second electrical path 920 at the symmetry line 950.
  • the first electrical path 910 and the second electrical path 920 are symmetric relative to the symmetry line 950, as shown in FIG. 10 .
  • the secondary coil 120 includes a third electrical path 930 and a fourth electrical path 940.
  • the third electrical path 930 and the fourth electrical path 940 are respectively located at different sides of the symmetry line 950 on the projection plane (shown in FIG. 10 ).
  • a first terminal of the third electrical path 930 and a first terminal of the fourth electrical path 940 respectively serve as the first port Port3 and the second port Port4 of the secondary coil 120.
  • a second terminal of the third electrical path 930 is connected to a second terminal of the fourth electrical path 940 at the symmetry line 950.
  • the third electrical path 930 and the fourth electrical path 940 are symmetric relative to the symmetry line 950, as shown in FIG. 10 .
  • the transformer 100, the first electrical path 910, the second electrical path 920, the third electrical path 930 and the fourth electrical path 940 shown in FIG. 9 and FIG. 10 can be deduced according to related description of the transformer 100, the first electrical path 210, the second electrical path 220, the third electrical path 230 and the fourth electrical path 240 shown in FIG. 2 to FIG. 4 , and details thereof are not repeated.
  • the first electrical path 910 includes a first partial path 911 disposed on the first substrate 260 and a second partial path 912 disposed on the second substrate 270.
  • the second electrical path 920 includes a third partial path 921 disposed on the first substrate 260 and a fourth partial path 922 disposed on the second substrate 270.
  • the third electrical path 930 includes a fifth partial path 931 disposed on the first substrate 260 and a sixth partial path 932 disposed on the second substrate 270.
  • the fourth electrical path 940 includes a seventh partial path 941 disposed on the first substrate 260 and an eighth partial path 942 disposed on the second substrate 270.
  • the first partial path 911, the third partial path 921, the fifth partial path 931 and the seventh partial path 941 are allocated to a RDL on the first substrate 260 (the upper layer chip), and the second partial path 912, the fourth partial path 922, the sixth partial path 932 and the eighth partial path 942 are allocated to a RDL of the second substrate 270 (the lower layer chip).
  • the second partial path 912 of the primary coil 110 includes a first wire segment 912_1, and the first partial path 911 of the primary coil 110 includes a second wire segment 911_1.
  • a first terminal of the first wire segment 912_1 serves as the first port Port1 of the primary coil 110.
  • a second terminal of the first wire segment 912_1 is connected to a first terminal of the second wire segment 911_1 through a first TSV 901.
  • the fourth partial path 922 of the primary coil 110 includes a third wire segment 922_1, and the third partial path 921 of the primary coil 110 includes a fourth wire segment 921_1.
  • a first terminal of the third wire segment 922_1 serves as the second port Port2 of the primary coil 110.
  • a second terminal of the third wire segment 922_1 is connected to a first terminal of the fourth wire segment 921_1 through a second TSV 902.
  • a second terminal of the fourth wire segment 921_1 is connected to a second terminal of the second wire segment 911_1.
  • the first wire segment 912_1 and the third wire segment 922_1 are bendable line segments
  • the second wire segment 911_1 and the fourth wire segment 921_1 are a half of an O-shape line segment presenting a shape of "U”.
  • the second wire segment 911_1 can be connected to the fourth wire segment 921_1 to present the O-shape line segment.
  • the fifth partial path 931 of the secondary coil 120 includes a first wire segment 931_1, and the sixth partial path 932 of the secondary coil 120 includes a second wire segment 932_1.
  • a first terminal of the first wire segment 931_1 serves as the first port Port3 of the secondary coil 120.
  • a second terminal of the first wire segment 931_1 is connected to a first terminal of the second wire segment 932_1 through a first TSV 903.
  • the seventh partial path 941 of the secondary coil 120 includes a third wire segment 941_1, and the eighth partial path 942 of the secondary coil 120 includes a fourth wire segment 942_1.
  • a first terminal of the third wire segment 941_1 serves as the second port Port4 of the secondary coil 120.
  • a second terminal of the third wire segment 941_1 is connected to a first terminal of the fourth wire segment 942_1 through a second TSV 904.
  • a second terminal of the fourth wire segment 942_1 is connected to a second terminal of the second wire segment 932_1.
  • the first wire segment 931_1 and the third wire segment 941_1 can be bendable line segments, and the second wire segment 932_1 and the fourth wire segment 942_1 are a half of an O-shape line segment presenting a shape of "U".
  • the second wire segment 932_1 and the fourth wire segment 942_1 are connected to form an O-shape line segment, and the O-shape line segment is disposed between the first wire segment 912_1 and the third wire segment 922_1.
  • the O-shape line segment formed by the second wire segment 911_1 and the fourth wire segment 921_1 is disposed between the first wire segment 931_1 and the third wire segment 941_1.
  • the electrical paths of the primary coil 110 and the secondary coil 120 can be respectively located at different projection positions.
  • the transformer 100 of FIG. 9 to FIG. 10 is adapted to a circuit design of a differential structure.
  • a turns ratio between the primary coil 110 and the secondary coil 120 is 1:1, so that the transformer 100 shown in FIG. 9 to FIG. 10 is a transformer with the turns ratio of 1:1.
  • the TSV vertical paths and planar paths of different substrates (chips) in the 3DIC manufacturing process are used to implement the symmetrical transformer 100. Therefore, the transformer 100 can save chip area. Moreover, the transformer 100 can be applied to vertical signal coupling transmission between different chips.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Of Transformers For General Uses (AREA)
EP14196615.0A 2014-07-09 2014-12-05 Dreidimensionaler symmetrischer vertikaler Transformator Withdrawn EP2966661A3 (de)

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US10872843B2 (en) * 2017-05-02 2020-12-22 Micron Technology, Inc. Semiconductor devices with back-side coils for wireless signal and power coupling
WO2019218371A1 (zh) * 2018-05-18 2019-11-21 华为技术有限公司 一种振荡器的集成电路
CN112103048A (zh) * 2020-08-04 2020-12-18 西安理工大学 一种基于tsv的嵌套式变压器

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KR20080031153A (ko) * 2005-08-04 2008-04-08 더 리전트 오브 더 유니버시티 오브 캘리포니아 인터리브된 3차원 온칩 차동 인덕터 및 트랜스포머
KR101444708B1 (ko) * 2009-12-15 2014-09-26 한국전자통신연구원 인덕터
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CN105304607B (zh) 2018-11-23

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