EP2883255A2 - Oberflächenbearbeitung einer schicht aus einem fluoriertem material zu dessen hydrophilisierung - Google Patents

Oberflächenbearbeitung einer schicht aus einem fluoriertem material zu dessen hydrophilisierung

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Publication number
EP2883255A2
EP2883255A2 EP13779362.6A EP13779362A EP2883255A2 EP 2883255 A2 EP2883255 A2 EP 2883255A2 EP 13779362 A EP13779362 A EP 13779362A EP 2883255 A2 EP2883255 A2 EP 2883255A2
Authority
EP
European Patent Office
Prior art keywords
layer
hydroxide
fluorinated
oxo
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP13779362.6A
Other languages
English (en)
French (fr)
Inventor
Mohammed Benwadih
Olivier Poncelet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Publication of EP2883255A2 publication Critical patent/EP2883255A2/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the invention relates to a treatment method for hydrophilizing a surface of a layer of a fluorinated material, a method of depositing a layer of a metallic or semiconductor material on the surface of a layer made of a fluorinated material, and a device comprising a layer of a fluorinated material, a surface of which has been treated by the treatment method of the invention, and a layer of a metallic material.
  • Many devices include layers of a fluorinated material such as a fluoropolymer (also referred to herein as fluoropolymer) or a material containing at least one fluorine atom.
  • a fluorinated material such as a fluoropolymer (also referred to herein as fluoropolymer) or a material containing at least one fluorine atom.
  • fluoropolymers are used in the manufacture of electronic components such as organic transistors, for electrical insulation, or in the manufacture of mechanical parts subjected to extreme conditions of use, in terms of temperature or aggressiveness of solvents.
  • fluoropoîymomme and in particular the Cytop ®, which is a fluoropolymer, exhibit properties particularly suited to form the dielectric material of the gate of a transistor or a capacitance or the encapsulation layers used in this field.
  • Patent FR 2 919 521 proposes a device comprising a fluoropolymer layer of which at least part of the surface is covered with a polymer comprising at least one fluorinated function and at least one acid or base function and forming a layer of hooked on said fluoropolymer, said hook layer being covered by another layer.
  • the hook layer is an ionic conductive material that disrupts the proper operation of the transistor.
  • the aim of the invention is to provide a process which makes it possible to render the hydrophilic layer of a fluorinated material hydrophilic, in order to allow the deposition of other layers on this layer of fluorinated material,
  • the invention proposes a treatment process for rendering a hydrophilic surface of a layer made of a fluorinated material, characterized in that it comprises a step a) of depositing a layer of a (oxo) hydroxide d an element of the alcalino-terrous metal group or group II or group III of the periodic table of the elements or of a rare earth, or a mixture thereof on said surface.
  • said element is magnesium or aluminum and Mg (OH) 2 magnesium hydroxide or Al (OH) 3 aluminum hydroxide is deposited.
  • the thickness of the (oxo) hydroxide layer is between 10 nm and 1 ⁇ m, more preferably, this thickness is between 10 and 300 nm, inclusive. Even more preferably, it is equal to 50 nm.
  • step a) of depositing on said surface is a step of hydrolysis, on said surface, of a salt of said element.
  • step a) is a step of depositing said (oxo) hydroxide of said element in suspension in a solvent.
  • said suspension is a colloidal sol of said (oxo) hydroxide of said element.
  • the layer of a fluorinated material is a layer of a fluorinated polymer or fluorinated silane.
  • the invention also proposes a method for depositing a layer of a material chosen from a metallic material, an electrically conductive material, a semiconductor material and an insulating material, on the surface of a layer made of a fluorinated material. characterized in that it comprises a step of treating said surface of the layer with a fluorinated material to make it hydrophilic, by the process according to the invention, followed by a step of depositing said layer of a metallic material, or conductor of electricity, or semiconductor, or insulator.
  • the material is a metallic material selected from silver, chromium, gold, titanium, aluminum, platinum, palladium, copper, nickel, molybdenum, an ink conductor, in particular comprising metal nanoparticles.
  • the material is a metallic electrically conductive material
  • it is preferably selected from a conductive polymer, such as PEDOT / PSS: sodium poly (3,4-ethylenedioxythiophene) (PEDOT) / polystyrene sulfonate (PSS), polyaniline, the conductive metal oxides chosen from ⁇ (indium-tin-oxide), ⁇ (conducting alloy of aluminum oxide and zinc), WO 3 (tungsten oxide), carbon nanopipes, graphene , silver / graphene mixtures, or even copper / graphene mixtures.
  • PEDOT / PSS sodium poly (3,4-ethylenedioxythiophene) (PEDOT) / polystyrene sulfonate (PSS), polyaniline
  • the conductive metal oxides chosen from ⁇ (indium-tin-oxide), ⁇ (conducting alloy of aluminum oxide and zinc), WO 3 (tungsten oxide), carbon nanopipes, graphene , silver / graphene
  • the invention also proposes a device characterized in that it comprises a layer made of a fluorinated material, one surface of which is coated with an (oxo) hydroxide layer of an element selected from the group of alkaline earth metals or from the group II or III of the periodic table of the elements, or a rare earth, and a layer of a material selected from a metal material, an electrically conductive material, a semiconductor material, and an insulating material, deposited on the surface of the (oxo) hydroxide layer not in contact with the layer of a fluorinated material.
  • an (oxo) hydroxide layer of an element selected from the group of alkaline earth metals or from the group II or III of the periodic table of the elements, or a rare earth
  • a layer of a material selected from a metal material, an electrically conductive material, a semiconductor material, and an insulating material, deposited on the surface of the (oxo) hydroxide layer not in contact with the layer of a fluorinated
  • the (oxo) hydroxide is an (oxo) hydroxide of a member selected from among beryllium, magnesium, calcium, strontium, indium, barium, radium , aluminum, zinc, scandium, yttrium, and mixtures thereof.
  • the (oxo) hydroxide is Mg (OH) 2 magnesium hydroxide or Al (OH) 3 aluminum hydroxide.
  • the thickness of the (oxo) hydroxide layer is between 10 and 300 nm, inclusive. Preferably, it is equal to 50 nm.
  • the layer of a fluorinated material is a layer of a fluorinated polymer or a fluorinated silane.
  • the layer made of a metallic material it is preferably made of a material chosen from among silver, chromium, gold, titanium, aluminum, platinum, palladium, copper, nickel and molybdenum. , a conductive ink, in particular comprising metal nanoparticles.
  • the layer made of an electrically conductive material is preferably made of a material chosen from a conductive polymer such as PEDOT / PSS: sodium poly (3,4-ethylenedioxythiophene) (PEDOT) / poly (styrene sulphonate) ( PSS), polyaniline, conductive metal oxides selected from ⁇ (indium-tin-oxide), AZO (alloy of aluminum oxide and zinc), WO 3 (tungsten oxide), carbon nanotubes graphene, silver / graphene mixtures, or copper / graphene mixtures.
  • PEDOT / PSS sodium poly (3,4-ethylenedioxythiophene) (PEDOT) / poly (styrene sulphonate) ( PSS), polyaniline, conductive metal oxides selected from ⁇ (indium-tin-oxide), AZO (alloy of aluminum oxide and zinc), WO 3 (tungsten oxide), carbon nanotubes graphene, silver / graphene mixtures, or copper
  • a preferred device according to the invention is an organic transistor.
  • FIG. 1 schematically represents the structure of an organic transistor before depositing the gate
  • FIG. 2 represents the transistor of FIG. 1 being processed by the method of the invention before depositing the gate
  • FIG. 3 diagrammatically represents the transistor obtained after the treatment carried out as shown in FIG. 2,
  • FIG. 4 represents the transistor of FIG. 3 with the gate deposited
  • FIG. 5 represents the increase in the thickness of the layer obtained during the treatment of the surface of a fluoropolymer by the process of the invention as a function of time
  • FIG. 6 shows a photograph taken with an optical microscope at a magnification x 5 of the surface of a layer of fluorinated polymer, Cytop ® of the prior art on which an electrode was printed with a silver ink to P ,
  • FIG. 7 shows a photograph taken with an optical microscope at a magnification x 5 of the surface of a layer of fluorinated polymer, Cytop ®, treated according to the invention wherein an electrode was printed with an ink to money, and
  • FIG. 8 represents the variation of the gate voltage, Vg, in volts, of a transistor of the prior art and of a transistor according to the invention.
  • the invention proposes to cover the surface of the layer made of a fluorinated material with the aid of an additional layer called "hooked" layer which makes it possible to obtain a hydrophilic surface on which a layer may be deposited, in particular of a metal such as silver, chromium, gold, titanium, aluminum, platinum, palladium, copper, nickel, molybdenum, a conductive ink, in particular comprising metal nanoparticles.
  • a metal such as silver, chromium, gold, titanium, aluminum, platinum, palladium, copper, nickel, molybdenum
  • the electrically conductive material it is preferably chosen from a conducting polymer such as PEDOT / PSS: poly (3,4-ethylenedioxythiophene) (PEDOT) / sodium polystyrene sulphonate (PSS), polyaniline, conductive metal oxides selected from PITO (indium-tin-oxide), AZO (alloy of aluminum oxide and zinc), WO 3 (tungsten oxide), carbon nanotubes, graphene, silver mixtures graphene or copper / graphene mixtures. An adherent structure is then obtained.
  • a conducting polymer such as PEDOT / PSS: poly (3,4-ethylenedioxythiophene) (PEDOT) / sodium polystyrene sulphonate (PSS), polyaniline, conductive metal oxides selected from PITO (indium-tin-oxide), AZO (alloy of aluminum oxide and zinc), WO 3 (tungsten oxide), carbon nanotubes, graphene, silver mixtures graphene or
  • the invention proposes to modify the wettability of the surface of the layer in a fluorinated material by creating a layer of hook formed of an alkaline earth metal hydroxide or oxohydroxide, or an element of the group II or group III of the periodic table of the elements, or of a rare earth.
  • this layer will be called "(oxo) hydroxide layer” to mean both a layer of a hydroxide of the element and a layer of an oxohydroxide of the element. .
  • This element may be beryllium, magnesium, calcium, strontium, indium, barium, radium, aluminum, zinc, scandium, yttrium, and mixtures thereof.
  • Magnesium or aluminum will preferably be used as the element, in which case the layer formed will be a brucite, Mg (OH) 2 or gibbsite, Al (OH) 3 layer, respectively.
  • the layers of brucite or gibbsite have the advantage of being electrically insulating and have a fairly high permittivity of the order of 8 and more.
  • brucite and gibbsite grow on fluoropolymer layers and have the ability to adhere to both fluorinated polymers such as Tefion ® or Cytop ® , as a layer of fluorinated silane, than to other materials, for example, fluorine glues.
  • this ink adheres to brucite or gibbsite, which allows to deposit, particularly in the case of transistors where the layer of dielectric material is often a fluorinated polymer, another layer of a metal, for example to form the gate electrode, by techniques such as printing, spin coating, or gluing.
  • the invention finds application more particularly in the field of organic transistors. Indeed, it is now accepted that in order to obtain organic transistors which have little hysteresis and high mobility, it is necessary for the dielectric material of the gate to consist of a polymer having a low value of c (called low K ) (J. Veres et al., "Gaste Insulators in Organic Field-Effect Transistors", Chem Mater 2004, 16, 4543-4555).
  • fluoropolymers are materials of choice. It is therefore necessary to deposit the other layers that constitute the stack of a transistor on this layer.
  • FIG. 1 schematically represents the structure of an organic transistor before the deposition of the gate.
  • such a transistor consists of a substrate, denoted 1 in FIG. 1, generally made of polyethylene naphthalate (PEN) having a thickness generally of 125 ⁇ m.
  • PEN polyethylene naphthalate
  • silica silicon, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide (PI), polyetherimide ( PEI), polyether sulphone (PES), polysulfone (PSF), polyphenylene sulphide (PPS), polyether ether ketone (PEEK), polyacrylate (PA), polyamide imide (PAI), polystyrene, polyethylene polypropylene, a polyamine resin, a carbonate resin or a cellulosic resin.
  • source electrode and drain electrode On this substrate is deposited two electrodes noted 2 in Figure 1, called source electrode and drain electrode.
  • Electrodes are structured, that is to say that their surface is not flat. These electrodes are structured by a laser treatment or by photolithography.
  • Electrodes are generally made of gold, have a thickness of 30 nm and are deposited by evaporation.
  • these electrodes 2 and a portion of the substrate 1 are coated with a layer, denoted 3 in FIG. 1, of a semiconductor material, generally of the TIPS PENTACENE type, which is a small semiconductor molecule deposited by a printing technique such as gravure, or tetracene or anthracene.
  • a semiconductor material generally of the TIPS PENTACENE type, which is a small semiconductor molecule deposited by a printing technique such as gravure, or tetracene or anthracene.
  • a layer denoted 3 in FIG. 1
  • a semiconductor material generally of the TIPS PENTACENE type, which is a small semiconductor molecule deposited by a printing technique such as gravure, or tetracene or anthracene.
  • organic semi-conducting materials considered in the context of the present invention. These may be molecules of low molecular weight (commonly called "small molecules"), and especially molecules with a molecular weight of less than 1000 g / mol, or poly
  • organic semiconductors have the common point to present a conjugate system from ⁇ alternating single and double carbon-carbon bonds.
  • organic semiconductor of low molecular weight there may be mentioned, for example, those of the polyacene, oligothiophene or phthalocyanine type.
  • polymeric organic semiconductors that may be mentioned are those of polyacetylene, polyphenylene, polythiophene or poly (phenylene / vinylene) type.
  • It may especially be an organic semiconductor selected from pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, alpha-4-thiophene, perylene and its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylene tetracarboxylic dianhydride and its derivatives, polythiophene and its derivatives, polyparaphenylene-vinylene and its derivatives, polyparaphenylene and its derivatives, polyfluorene and its derivatives, a polyfluorene-oligothiophene copolymer and its derivatives, polythiophene-vinylene and its derivatives, a polythiophene heterocyclic aromatic copolymer and its derivatives, an oligonaphthalene and its derivatives, alpha-5-thiophene oligothiophene and its derivatives, phthalo
  • the gate electrode must then be deposited.
  • a layer, denoted 4 in FIG. 1, of fluoropolymer is deposited on the layer 3.
  • the fluoropolymer used is generally a fluoropolymer CYTOP ® with a thickness between 500 and 800 nm, inclusive.
  • this gate electrode denoted 6 in FIG. 4, It is then necessary to deposit the gate electrode, denoted 6 in FIG. 4, on this layer 4 made of fluoropolymer.
  • This gate electrode has a thickness of between 50 nm and 1 ⁇ , inclusive. Due to the evoked difficulties of deposition on the fluoropolymer layer 4, there is a lack of adhesion between the layer 4 and the upper layer 6, namely the gate electrode. These layers are not uniform.
  • the treatment method of the invention for rendering the surface of the layer 4 hydrophilic in a fluorinated material is diagrammatically shown in FIG.
  • a drop, denoted 10 in FIG. 2 of a liquid solution of one element of the group is deposited.
  • This drop 10 covers the entire layer 4.
  • a layer, noted in FIG. 2, of hydroxide or oxohydroxide of the element is then obtained after drying in order to evaporate the solvent from the deposited solution.
  • the element when the element is magnesium or aluminum, due to brucite's affinity, Mg (OH) 2 , and gibbsite, Al (OH) 3 , with the fluorinated surface of layer 4 it a sheet of brucite or gibbsite forms on the entire exposed surface of layer 4.
  • This layer 5 varies as a function of the contact time between the solution of the element of the group of alkaline-earth metals or of group II or III of the periodic table or of the rare earth, on the surface of layer 4 .
  • the layer 5, said hooked, has a thickness generally between 10 nm and 1 ⁇ , inclusive. It is preferably between 10 and 300 nm, inclusive. But in a transistor, it is preferably 50 nm.
  • the solution deposited on the layer 4 may be a solution of the element to be deposited itself, for example a colloidal sol of the hydroxide of the element or of the oxohydroxide of the element.
  • a colloidal sol of magnesium hydroxide Mg (OH) 2 or aluminum hydroxide Al (OH) 3 can be used ,
  • magnesium chloride MgCl 2 or magnesium fluoride MgF 2 or aluminum chloride may be used and dissolved in water. This solution will be deposited on layer 4 and a sodium hydroxide solution will then be poured on the magnesium chloride solution. The formation reaction of the brucite film on layer 4 starts from pH 9.
  • Figure 5 shows the variation in thickness of a layer of brucite Mg (OH) 2 as a function of immersion time of a Cytop ® layer in a solution containing 100 mg of MgCl 2 in 200 mL of water, which was added sodium hydroxide solution, NaOH concentration of 0.5 mol / l, until a pH of 9.
  • the invention also proposes a process for depositing a layer 6 made of a metallic material, or an electrically conductive material such as a conductive polymer such as PEDOT / PSS, (poly (3,4-ethylenedioxythiophene) ) (PEDOT) and sodium polystyrene sulfonate (PSS), or a semiconductor material such as one of those mentioned above, or an insulating material, on the surface of a layer 4 in a fluorinated material, this process comprising a step of treating the surface of the layer 4 to create the hook layer 5, as shown above, by the treatment method of the invention, then the deposition of said layer 6 of a metal or semiconductor material.
  • a conductive polymer such as PEDOT / PSS, (poly (3,4-ethylenedioxythiophene) ) (PEDOT) and sodium polystyrene sulfonate (PSS), or a semiconductor material such as one of those mentioned above, or an insulating material
  • the metallic material is preferably selected from silver, chromium, gold, titanium, aluminum, platinum, palladium, copper, nickel, molybdenum, a conductive ink, in particular comprising metal nanoparticles.
  • the electrically conductive material it is preferably chosen from a conducting polymer such as PEDOT / PSS: poly (3,4-ethylenedioxythiophene) (PEDOT) / sodium polystyrene sulfonate (PSS), polyaniline, the conductive metal oxides chosen from ⁇ (indium-tin-oxide), AZO (alloy of aluminum oxide and zinc), WO 3 (tungsten oxide), carbon nanotubes, graphene, mixtures silver / graphene, or copper / graphene mixtures.
  • a conducting polymer such as PEDOT / PSS: poly (3,4-ethylenedioxythiophene) (PEDOT) / sodium polystyrene sulfonate (PSS), polyaniline, the conductive metal oxides chosen from ⁇ (indium-tin-oxide), AZO (alloy of aluminum oxide and zinc), WO 3 (tungsten oxide), carbon nanotubes, graphene, mixtures silver / graphene, or copper
  • the devices obtained by these methods are also an object of the invention.
  • a device comprises a layer 4 made of a fluorinated material, such as a fluorinated polymer or a fluorinated silane, one surface of which is coated with a layer of an elemental hydroxide or oxohydroxide. of the alkaline earth metal group or group II or III of the Periodic Table of the Elements or rare earth, or mixtures thereof.
  • a fluorinated material such as a fluorinated polymer or a fluorinated silane, one surface of which is coated with a layer of an elemental hydroxide or oxohydroxide. of the alkaline earth metal group or group II or III of the Periodic Table of the Elements or rare earth, or mixtures thereof.
  • the device of the invention may further comprise a layer 6 of a metallic or electrically conductive or semiconductor or insulating material deposited on all or part of the surface of the layer 5.
  • a gold layer 2 30 nm thick, was deposited by evaporation or by vapor deposition (PVD). This layer 2 of gold is etched to form the source and drain electrodes. This can be done by photolithography or laser ablation.
  • PEN polyethylene naphthalate
  • PVD vapor deposition
  • a layer 3 of 100% thick TIPS PENTACENE semiconducting material is then deposited by gravure printing.
  • a dielectric material which is here a fluorinated polymer, Cytop ®, with a thickness of 800 nm.
  • This layer 4 was formed by screen printing.
  • This layer 4 is then treated by the treatment method of the invention.
  • a second solution of NaOH is made in water at a concentration of 100 mg / mL.
  • the device obtained is immersed in the MgCl 2 solution.
  • the NaOH solution is slowly added until a pH of 9 is reached.
  • the hydrolysis reaction starts on the fluorine of layer 4 due to the difference in electronegativity between fluorine, which is electronegative, and magnesium, which is electropositive.
  • a brucite germ Mg (OH) 2 is formed on the surface of layer 4.
  • the device is kept in the solution.
  • the water drop contact angle is less than 5 °.
  • the grid electrode 6 still containing silver nanoparticles is then deposited by ink jet on the surface of this layer 5.
  • the device shown in FIG. 6 is then obtained.
  • the electrode 6 has a thickness of 1 ⁇ .
  • Figure 6 is a photograph taken from above of the device. As can be seen, the grid formed does not dew and has sharp contours.
  • the contact angle of the drop of water on the surface obtained was measured.
  • the contact angle was 110 °.
  • the device obtained is shown in FIG. 7 where the layer 4 represents the device seen from above, the fluoropolymer layer being marked 4 and the ink layer of silver nanoparticles being denoted 6.
  • the treatment method of the invention for rendering the surface of a hydrophilic fluorinated material is quite effective. .
  • Examples 1 and 2 were then electrically tested by plotting the characteristic curves of a field effect transistor.
  • the curve has a larger current.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Chemically Coating (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
EP13779362.6A 2012-08-13 2013-08-12 Oberflächenbearbeitung einer schicht aus einem fluoriertem material zu dessen hydrophilisierung Withdrawn EP2883255A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1257781A FR2994395B1 (fr) 2012-08-13 2012-08-13 Traitement de surface d'une couche en un materiau fluore pour la rendre hydrophile
PCT/IB2013/056584 WO2014027299A2 (fr) 2012-08-13 2013-08-12 Traitement de surface d'une couche en un materiau fluore pour la rendre hydrophile

Publications (1)

Publication Number Publication Date
EP2883255A2 true EP2883255A2 (de) 2015-06-17

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EP13779362.6A Withdrawn EP2883255A2 (de) 2012-08-13 2013-08-12 Oberflächenbearbeitung einer schicht aus einem fluoriertem material zu dessen hydrophilisierung

Country Status (5)

Country Link
US (1) US20150194620A1 (de)
EP (1) EP2883255A2 (de)
JP (1) JP2015525004A (de)
FR (1) FR2994395B1 (de)
WO (1) WO2014027299A2 (de)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4007059A (en) * 1975-08-20 1977-02-08 General Motors Corporation Electrochemical cell electrode separator and method of making it and fuel cell containing same
WO1998044545A1 (en) * 1997-04-03 1998-10-08 W.L. Gore & Associates, Inc. Method to improve adhesion of a thin submicron fluoropolymer film on an electronic device
FR2919521B1 (fr) 2007-08-01 2012-03-09 Commissariat Energie Atomique Couche d'accroche sur des polymeres fluores
KR101291320B1 (ko) * 2009-03-23 2013-07-30 한국전자통신연구원 유기 박막 트랜지스터 및 그 형성방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2014027299A2 *

Also Published As

Publication number Publication date
JP2015525004A (ja) 2015-08-27
FR2994395A1 (fr) 2014-02-14
WO2014027299A3 (fr) 2014-04-10
US20150194620A1 (en) 2015-07-09
FR2994395B1 (fr) 2015-09-25
WO2014027299A2 (fr) 2014-02-20

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