EP2805353A4 - Solid-state image sensor and camera - Google Patents
Solid-state image sensor and cameraInfo
- Publication number
- EP2805353A4 EP2805353A4 EP13738370.9A EP13738370A EP2805353A4 EP 2805353 A4 EP2805353 A4 EP 2805353A4 EP 13738370 A EP13738370 A EP 13738370A EP 2805353 A4 EP2805353 A4 EP 2805353A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- camera
- solid
- image sensor
- state image
- state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14638—Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012008448A JP5967944B2 (en) | 2012-01-18 | 2012-01-18 | Solid-state imaging device and camera |
PCT/JP2013/050704 WO2013108798A1 (en) | 2012-01-18 | 2013-01-09 | Solid-state image sensor and camera |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2805353A1 EP2805353A1 (en) | 2014-11-26 |
EP2805353A4 true EP2805353A4 (en) | 2015-12-23 |
EP2805353B1 EP2805353B1 (en) | 2018-08-08 |
Family
ID=48799223
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP13738370.9A Not-in-force EP2805353B1 (en) | 2012-01-18 | 2013-01-09 | Solid-state image sensor and camera |
Country Status (6)
Country | Link |
---|---|
US (3) | US9147708B2 (en) |
EP (1) | EP2805353B1 (en) |
JP (1) | JP5967944B2 (en) |
KR (2) | KR101698252B1 (en) |
CN (1) | CN104054177B (en) |
WO (1) | WO2013108798A1 (en) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6008669B2 (en) * | 2012-09-19 | 2016-10-19 | キヤノン株式会社 | Solid-state imaging device, manufacturing method thereof, and camera |
JP6261361B2 (en) | 2014-02-04 | 2018-01-17 | キヤノン株式会社 | Solid-state imaging device and camera |
JP6595750B2 (en) | 2014-03-14 | 2019-10-23 | キヤノン株式会社 | Solid-state imaging device and imaging system |
JP6274567B2 (en) * | 2014-03-14 | 2018-02-07 | キヤノン株式会社 | Solid-state imaging device and imaging system |
JP6541347B2 (en) | 2014-03-27 | 2019-07-10 | キヤノン株式会社 | Solid-state imaging device and imaging system |
JP2015216186A (en) | 2014-05-09 | 2015-12-03 | ソニー株式会社 | Solid-state image pickup device and electronic device |
JP6109125B2 (en) | 2014-08-20 | 2017-04-05 | キヤノン株式会社 | Semiconductor device, solid-state imaging device, and imaging system |
JP6417197B2 (en) | 2014-11-27 | 2018-10-31 | キヤノン株式会社 | Solid-state imaging device |
JP6396775B2 (en) * | 2014-12-03 | 2018-09-26 | ルネサスエレクトロニクス株式会社 | Imaging device |
JP6764234B2 (en) * | 2015-06-03 | 2020-09-30 | キヤノン株式会社 | Solid-state image sensor and camera |
US9768213B2 (en) | 2015-06-03 | 2017-09-19 | Canon Kabushiki Kaisha | Solid-state image sensor and camera |
JP2017045873A (en) * | 2015-08-27 | 2017-03-02 | ルネサスエレクトロニクス株式会社 | Manufacturing method for semiconductor device and semiconductor device |
JP6541523B2 (en) | 2015-09-11 | 2019-07-10 | キヤノン株式会社 | Imaging device, imaging system, and control method of imaging device |
US10205894B2 (en) | 2015-09-11 | 2019-02-12 | Canon Kabushiki Kaisha | Imaging device and imaging system |
JP6570384B2 (en) | 2015-09-11 | 2019-09-04 | キヤノン株式会社 | Imaging apparatus and imaging system |
JP6727830B2 (en) * | 2016-02-09 | 2020-07-22 | キヤノン株式会社 | Imaging device |
JP6738200B2 (en) | 2016-05-26 | 2020-08-12 | キヤノン株式会社 | Imaging device |
JP2017220603A (en) | 2016-06-09 | 2017-12-14 | キヤノン株式会社 | Solid state imaging device and manufacturing method of solid state imaging device |
JP6727938B2 (en) | 2016-06-10 | 2020-07-22 | キヤノン株式会社 | IMAGING DEVICE, IMAGING DEVICE CONTROL METHOD, AND IMAGING SYSTEM |
JP6776011B2 (en) | 2016-06-10 | 2020-10-28 | キヤノン株式会社 | Imaging device and imaging system |
JP6688165B2 (en) | 2016-06-10 | 2020-04-28 | キヤノン株式会社 | Imaging device and imaging system |
US10319765B2 (en) | 2016-07-01 | 2019-06-11 | Canon Kabushiki Kaisha | Imaging device having an effective pixel region, an optical black region and a dummy region each with pixels including a photoelectric converter |
JP7013119B2 (en) | 2016-07-21 | 2022-01-31 | キヤノン株式会社 | Solid-state image sensor, manufacturing method of solid-state image sensor, and image pickup system |
JP2018092976A (en) | 2016-11-30 | 2018-06-14 | キヤノン株式会社 | Imaging apparatus |
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JP6701108B2 (en) | 2017-03-21 | 2020-05-27 | キヤノン株式会社 | Solid-state imaging device and imaging system |
JP6929114B2 (en) | 2017-04-24 | 2021-09-01 | キヤノン株式会社 | Photoelectric conversion device and imaging system |
US10818715B2 (en) | 2017-06-26 | 2020-10-27 | Canon Kabushiki Kaisha | Solid state imaging device and manufacturing method thereof |
JP6987562B2 (en) | 2017-07-28 | 2022-01-05 | キヤノン株式会社 | Solid-state image sensor |
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JP6023437B2 (en) | 2012-02-29 | 2016-11-09 | キヤノン株式会社 | Solid-state imaging device and camera |
JP5968146B2 (en) | 2012-07-31 | 2016-08-10 | キヤノン株式会社 | Solid-state imaging device and camera |
JP2014049727A (en) | 2012-09-04 | 2014-03-17 | Canon Inc | Solid-state image pickup device |
KR102007279B1 (en) * | 2013-02-08 | 2019-08-05 | 삼성전자주식회사 | Depth pixel included in three-dimensional image sensor, three-dimensional image sensor including the same and method of operating depth pixel included in three-dimensional image sensor |
JP6174901B2 (en) | 2013-05-10 | 2017-08-02 | キヤノン株式会社 | Solid-state imaging device and camera |
JP2014222863A (en) | 2013-05-14 | 2014-11-27 | キヤノン株式会社 | Imaging apparatus |
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2012
- 2012-01-18 JP JP2012008448A patent/JP5967944B2/en active Active
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2013
- 2013-01-09 KR KR1020147022126A patent/KR101698252B1/en active Application Filing
- 2013-01-09 CN CN201380005498.4A patent/CN104054177B/en active Active
- 2013-01-09 WO PCT/JP2013/050704 patent/WO2013108798A1/en active Application Filing
- 2013-01-09 US US14/359,640 patent/US9147708B2/en active Active
- 2013-01-09 EP EP13738370.9A patent/EP2805353B1/en not_active Not-in-force
- 2013-01-09 KR KR1020177000566A patent/KR20170008881A/en active Search and Examination
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US20060138580A1 (en) * | 2004-12-20 | 2006-06-29 | Tae-Jin Kim | Photo-detecting device and related method of formation |
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Also Published As
Publication number | Publication date |
---|---|
US20160071902A1 (en) | 2016-03-10 |
JP2013149757A (en) | 2013-08-01 |
US9147708B2 (en) | 2015-09-29 |
EP2805353A1 (en) | 2014-11-26 |
CN104054177A (en) | 2014-09-17 |
US20150357358A1 (en) | 2015-12-10 |
KR20140121430A (en) | 2014-10-15 |
WO2013108798A1 (en) | 2013-07-25 |
US9818794B2 (en) | 2017-11-14 |
JP5967944B2 (en) | 2016-08-10 |
KR101698252B1 (en) | 2017-01-19 |
EP2805353B1 (en) | 2018-08-08 |
CN104054177B (en) | 2017-05-31 |
US9276027B2 (en) | 2016-03-01 |
US20140300786A1 (en) | 2014-10-09 |
KR20170008881A (en) | 2017-01-24 |
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