EP2795658A1 - Homogenes hipims-beschichtungsverfahren - Google Patents
Homogenes hipims-beschichtungsverfahrenInfo
- Publication number
- EP2795658A1 EP2795658A1 EP12812516.8A EP12812516A EP2795658A1 EP 2795658 A1 EP2795658 A1 EP 2795658A1 EP 12812516 A EP12812516 A EP 12812516A EP 2795658 A1 EP2795658 A1 EP 2795658A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- power
- power pulse
- pulse interval
- generator
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3467—Pulsed operation, e.g. HIPIMS
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
Definitions
- the present invention relates to a HIPIMS method with which homogeneous layers can be deposited over the height of a coating chamber.
- the HIPIMS process is a physical coating process from the gas phase. More specifically, it is a magnetron-assisted sputtering method in which a very high discharge current density is imposed on the sputtering material-supplying target, so that a high electron density is generated in the plasma and the majority of the sputtered particles are ionized.
- Power densities between 250W / cm2 and 2000W / cm2 are used and special demands are placed on the generator supplying the power. In particular, it is not possible to permanently affect such a performance on the target, as this would overheat and thus be damaged. The power must therefore be pulsed.
- the very high, desired discharge densities occur and the target heats up.
- the target can cool down again.
- Pulse duration and pulse pause must be coordinated so that the average power applied to the target does not exceed a threshold value. For HIPIMS therefore generators are required, which are able to deliver pulsed very high performance.
- the workpieces are often distributed over the entire usable coating height. Workpieces are both tools and other components. In many cases, it is important to coat the workpieces with the same layer thickness and with the same layers, whether at the top, in the middle or at the bottom. In particular, if, as in the HIPIMS process, plasmas and their density have a significant influence on the coating rate, this goal is difficult to achieve. One of the reasons for this is that the plasmas themselves are influenced by the surrounding environment, which can lead to different coating rates over the height of the coating chamber. Typically, DC sputtering attempts to compensate for this by adjusting the magnetic fields across the height.
- the procedure is such that a PVD sputtering cathode comprising a first part cathode and a second part cathode is operated, wherein a maximum average power input is predetermined for the part cathodes and wherein the duration of the power pulse intervals are predetermined and the method comprises the following steps: a) Provision of a generator with a predetermined power output, preferably at least after switching on and after expiry of a power setup interval b) Turning on the generator c) Connecting the first part cathode to the generator, so that the The first partial cathode is supplied with power from the generator.
- FIG. 1 shows a corresponding situation with 6 partial cathodes and 3 groups.
- the object is now achieved by individually selecting the length of the individual power pulse intervals and thus achieving a desired coating thickness profile over the height of the coating chamber. That According to the invention, the magnetic fields are not adjusted over the height of the coating chamber, as usual, but the duration of the power pulse intervals. The same is shown in FIG. It can be seen that the power pulse interval connected to the first sub-cathode is significantly longer than the power pulse interval connected to the sub-cathode 5. Due to the longer power pulse interval, the average coating rate starting from the partial cathode 1 becomes longer than the average coating rate starting from the partial cathode 5.
- the power pulse intervals of all the subcathodes are selected to be the same length, and so a first coating is made for calibration. Subsequently, the coating thicknesses are measured over the height of the coating chamber. If there are differences in the thicknesses, then where the layers are too small in comparison to the average thickness, the power pulse intervals are somewhat prolonged. Where the layers are too large compared to the average thickness, the power pulse intervals are somewhat shortened. By doing so, a balance is achieved, it being clear to the person skilled in the art that several iteration steps can be carried out to further improve the homogenization.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Pretreatment Of Seeds And Plants (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011121770A DE102011121770A1 (de) | 2011-12-21 | 2011-12-21 | Homogenes HIPIMS-Beschichtungsverfahren |
PCT/EP2012/004847 WO2013091761A1 (de) | 2011-12-21 | 2012-11-23 | Homogenes hipims-beschichtungsverfahren |
Publications (1)
Publication Number | Publication Date |
---|---|
EP2795658A1 true EP2795658A1 (de) | 2014-10-29 |
Family
ID=47520875
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP12812516.8A Withdrawn EP2795658A1 (de) | 2011-12-21 | 2012-11-23 | Homogenes hipims-beschichtungsverfahren |
Country Status (13)
Country | Link |
---|---|
US (1) | US10982321B2 (pt) |
EP (1) | EP2795658A1 (pt) |
JP (1) | JP6180431B2 (pt) |
KR (1) | KR101934141B1 (pt) |
CN (1) | CN104160470B (pt) |
BR (1) | BR112014014793B1 (pt) |
CA (1) | CA2859747C (pt) |
DE (1) | DE102011121770A1 (pt) |
MX (1) | MX341506B (pt) |
PH (1) | PH12014501435B1 (pt) |
RU (1) | RU2633516C2 (pt) |
SG (1) | SG11201403396SA (pt) |
WO (1) | WO2013091761A1 (pt) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011117177A1 (de) * | 2011-10-28 | 2013-05-02 | Oerlikon Trading Ag, Trübbach | Verfahren zur Bereitstellung sequenzieller Leistungspulse |
AU2016280616B2 (en) * | 2015-06-18 | 2020-10-22 | Lenz Therapeutics Operations, Inc. | Compositions for the improvement of distance vision and the treatment of refractive errors of the eye |
JP7509790B2 (ja) | 2019-02-11 | 2024-07-02 | アプライド マテリアルズ インコーポレイテッド | パルスpvdにおけるプラズマ改質によるウエハからの粒子除去方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE202010001497U1 (de) * | 2010-01-29 | 2010-04-22 | Hauzer Techno-Coating B.V. | Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4515668A (en) * | 1984-04-25 | 1985-05-07 | Honeywell Inc. | Method of forming a dielectric layer comprising a gettering material |
JPS6141766A (ja) * | 1984-08-06 | 1986-02-28 | Hitachi Ltd | スパツタリング方法およびスパツタ−装置 |
DE3700633C2 (de) * | 1987-01-12 | 1997-02-20 | Reinar Dr Gruen | Verfahren und Vorrichtung zum schonenden Beschichten elektrisch leitender Gegenstände mittels Plasma |
JPH07116596B2 (ja) * | 1989-02-15 | 1995-12-13 | 株式会社日立製作所 | 薄膜形成方法、及びその装置 |
DE19651615C1 (de) * | 1996-12-12 | 1997-07-10 | Fraunhofer Ges Forschung | Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern |
US9771648B2 (en) * | 2004-08-13 | 2017-09-26 | Zond, Inc. | Method of ionized physical vapor deposition sputter coating high aspect-ratio structures |
US20050103620A1 (en) * | 2003-11-19 | 2005-05-19 | Zond, Inc. | Plasma source with segmented magnetron cathode |
US7718042B2 (en) * | 2004-03-12 | 2010-05-18 | Oc Oerlikon Balzers Ag | Method for manufacturing sputter-coated substrates, magnetron source and sputtering chamber with such source |
JP2006124753A (ja) * | 2004-10-27 | 2006-05-18 | Bridgestone Corp | Cu2O膜、その成膜方法及び太陽電池 |
DE102006017382A1 (de) * | 2005-11-14 | 2007-05-16 | Itg Induktionsanlagen Gmbh | Verfahren und Vorrichtung zum Beschichten und/oder zur Behandlung von Oberflächen |
DE102006021565A1 (de) * | 2005-12-20 | 2007-06-28 | Itg Induktionsanlagen Gmbh | Verfahren und Vorrichtung zum Erzeugen eines Magnetfeldsystems |
US7691544B2 (en) * | 2006-07-21 | 2010-04-06 | Intel Corporation | Measurement of a scattered light point spread function (PSF) for microelectronic photolithography |
JP5162464B2 (ja) * | 2006-10-24 | 2013-03-13 | 株式会社アルバック | 薄膜形成方法及び薄膜形成装置 |
US20080197015A1 (en) * | 2007-02-16 | 2008-08-21 | Terry Bluck | Multiple-magnetron sputtering source with plasma confinement |
JP5037475B2 (ja) * | 2008-11-11 | 2012-09-26 | 株式会社神戸製鋼所 | スパッタ装置 |
DE102010007516A1 (de) * | 2010-02-11 | 2011-08-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 | Großflächige Kathode für Plasmaprozesse mit hohem Ionisierungsgrad |
DE102010007515A1 (de) * | 2010-02-11 | 2011-08-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 | Verfahren zum Betreiben einer großflächigen Kathode für Plasmaprozesse mit hohem Ionisierungsgrad |
DE102011117177A1 (de) * | 2011-10-28 | 2013-05-02 | Oerlikon Trading Ag, Trübbach | Verfahren zur Bereitstellung sequenzieller Leistungspulse |
DE102011018363A1 (de) * | 2011-04-20 | 2012-10-25 | Oerlikon Trading Ag, Trübbach | Hochleistungszerstäubungsquelle |
-
2011
- 2011-12-21 DE DE102011121770A patent/DE102011121770A1/de not_active Withdrawn
-
2012
- 2012-11-23 EP EP12812516.8A patent/EP2795658A1/de not_active Withdrawn
- 2012-11-23 SG SG11201403396SA patent/SG11201403396SA/en unknown
- 2012-11-23 MX MX2014007668A patent/MX341506B/es active IP Right Grant
- 2012-11-23 RU RU2014129572A patent/RU2633516C2/ru active
- 2012-11-23 BR BR112014014793-0A patent/BR112014014793B1/pt active IP Right Grant
- 2012-11-23 US US14/367,354 patent/US10982321B2/en active Active
- 2012-11-23 KR KR1020147019513A patent/KR101934141B1/ko active IP Right Grant
- 2012-11-23 CA CA2859747A patent/CA2859747C/en active Active
- 2012-11-23 JP JP2014547731A patent/JP6180431B2/ja active Active
- 2012-11-23 CN CN201280063780.3A patent/CN104160470B/zh active Active
- 2012-11-23 WO PCT/EP2012/004847 patent/WO2013091761A1/de active Application Filing
-
2014
- 2014-06-20 PH PH12014501435A patent/PH12014501435B1/en unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE202010001497U1 (de) * | 2010-01-29 | 2010-04-22 | Hauzer Techno-Coating B.V. | Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle |
Also Published As
Publication number | Publication date |
---|---|
PH12014501435A1 (en) | 2014-09-22 |
JP2015508448A (ja) | 2015-03-19 |
US20150001063A1 (en) | 2015-01-01 |
MX2014007668A (es) | 2014-11-25 |
CN104160470B (zh) | 2017-01-18 |
RU2633516C2 (ru) | 2017-10-13 |
SG11201403396SA (en) | 2014-12-30 |
CA2859747A1 (en) | 2013-06-27 |
BR112014014793A2 (pt) | 2017-06-13 |
CA2859747C (en) | 2019-12-31 |
BR112014014793B1 (pt) | 2021-08-10 |
KR20140116102A (ko) | 2014-10-01 |
US10982321B2 (en) | 2021-04-20 |
RU2014129572A (ru) | 2016-02-10 |
JP6180431B2 (ja) | 2017-08-16 |
WO2013091761A1 (de) | 2013-06-27 |
CN104160470A (zh) | 2014-11-19 |
PH12014501435B1 (en) | 2014-09-22 |
MX341506B (es) | 2016-08-22 |
DE102011121770A1 (de) | 2013-06-27 |
KR101934141B1 (ko) | 2018-12-31 |
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Legal Events
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
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Effective date: 20140721 |
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DAX | Request for extension of the european patent (deleted) | ||
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: OERLIKON SURFACE SOLUTIONS AG, TRUEBBACH |
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
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17Q | First examination report despatched |
Effective date: 20180802 |
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18D | Application deemed to be withdrawn |
Effective date: 20190213 |