EP2773971A1 - Système variable de résistance, circuit en pont de mesure et procédé d'étalonnage d'un circuit en pont - Google Patents

Système variable de résistance, circuit en pont de mesure et procédé d'étalonnage d'un circuit en pont

Info

Publication number
EP2773971A1
EP2773971A1 EP12769964.3A EP12769964A EP2773971A1 EP 2773971 A1 EP2773971 A1 EP 2773971A1 EP 12769964 A EP12769964 A EP 12769964A EP 2773971 A1 EP2773971 A1 EP 2773971A1
Authority
EP
European Patent Office
Prior art keywords
resistor
bridge circuit
resistance value
tolerance range
variable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12769964.3A
Other languages
German (de)
English (en)
Inventor
Ingo Herrmann
Roland Mueller-Fiedler
Veronique Krueger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP2773971A1 publication Critical patent/EP2773971A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R35/00—Testing or calibrating of apparatus covered by the other groups of this subclass
    • G01R35/005—Calibrating; Standards or reference devices, e.g. voltage or resistance standards, "golden" references
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R17/00—Measuring arrangements involving comparison with a reference value, e.g. bridge
    • G01R17/10—AC or DC measuring bridges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C10/00—Adjustable resistors
    • H01C10/16—Adjustable resistors including plural resistive elements

Definitions

  • the present invention relates to a variable resistor arrangement, to a measuring bridge circuit, to a method for calibrating a measuring bridge circuit and to a corresponding control device and computer program product.
  • a possibility for adjusting the resistance of at least one of the strings is required due to component tolerances and manufacturing tolerances.
  • irreversible adjustment methods such as laser trimming or Zener zapping
  • individual resistors of a cascaded arrangement of resistors can be bridged or short-circuited in order to adapt a resulting resistance of the arrangement. If the balance is disturbed, for example because of component aging in the strands, readjustment is required. For this purpose, the cascaded arrangement can be exchanged and adjusted.
  • a device for the adjustment of sensor signals is known from DE 4 1 15 288 A1.
  • the present invention provides a variable resistor arrangement, a measuring bridge circuit, a method for calibrating a measuring bridge circuit, and finally a corresponding control device and computer program product according to the main claims.
  • Advantageous embodiments emerge from the respective subclaims and the following description.
  • the invention is based on the finding that a memristor can store an inscribed electrical resistance value as long as the memristor is operated above a cutoff frequency and / or below a limiting current strength.
  • the electrical resistance can be increased or decreased when the memristor is energized with a current below the cutoff frequency and / or above the cutoff amperage.
  • a circuit with a memristor may be operated to calibrate the circuit below the cutoff frequency and / or above the cutoff current level.
  • the circuit with the memristor can be operated in operation above the cutoff frequency and / or below the limit current and the calibration is maintained.
  • a single memristor occupying a small area can replace a large number of individual components that are conventionally held ready for calibration and occupy a large area.
  • a circuit with the memristor can be made smaller. Since the memristor can be calibrated again and again, the circuit can be permanently installed, since no circuit replacement is required. Due to the smaller number of parts, the circuit can also be provided inexpensively.
  • the present invention provides a variable resistance device comprising: a first device having a fixed electrical resistance; and a variable electrical resistance memristor connected in parallel with the first component to vary a total electrical resistance value of the resistor assembly.
  • the present invention provides a measuring bridge circuit, with the following features: a first branch having a series connected first resistor and a fixed resistor, wherein a first tap point is disposed between the first resistor and the fixed resistor; and a second branch having a series connected second resistor and a variable resistor arrangement according to the approach presented herein, wherein a second tap is disposed between the second resistor and the resistor arrangement, wherein the first branch and the second branch are connected in parallel and between the first tap and the second
  • the present invention provides a method for calibrating a measuring bridge circuit according to the approach presented here, the method comprising the following steps:
  • a component with a fixed electrical resistance value can be understood to be a resistor which remains the same within a tolerance range over its service life.
  • a memristor can be understood to mean a component with a variable electrical resistance value.
  • An electrical total resistance of a parallel circuit can be understood as the reciprocal of a sum of a reciprocal of the resistance value of the first component and a reciprocal of the resistance value of the memristor or of the second component.
  • the first component and the second component may be individual discrete components.
  • a measuring bridge circuit may have a first connection point for a supply voltage and a second connection point for the supply voltage.
  • the first branch may be electrically connected at the connection points with the second branch.
  • a Tap point can be a connection point.
  • a measuring instrument may be an ammeter or a voltage meter.
  • a physical calibration variable can be understood, for example, as a predetermined force. For example, the calibration size may be defined so that no external effect is applied to the resistor. The calibration sizes can be the same.
  • Changing the electrical resistance value for example, a rectified current or a rectified voltage can be applied to the Memristor.
  • a rectified component By connecting a rectified component to the memristor charge carriers in the memristor can experience a change in location, which can increase or decrease an electrical resistance of the memristor.
  • the rectified component may have a minimum size and / or a minimum duration.
  • the first resistor and / or the second resistor may be a resistive variable resistor, and configured to map a change in a physical quantity at the sensor in a corresponding change in an electrical resistance value.
  • a measuring variable-sensitive resistor may be a piezoresistive pressure sensor or a length sensor.
  • the first measurable sensitive resistor may be connected before the invariable resistor.
  • the variable resistor arrangement may be connected in front of the second measurement-sensitive resistor. By this arrangement, a half-bridge circuit can be realized.
  • the circuit can also be constructed as a quarter bridge with only one measuring variable sensitive resistor.
  • the variable resistor array may include at least one externally accessible calibration port.
  • the memristor can be directly supplied with current via a calibration connection. As a result, an effect of the other components on the calibration process can be minimized.
  • a tension measuring device can be arranged between the first tapping point and the second tapping point.
  • the measuring bridge circuit can be supplied with a constant current.
  • a change in the measured value sensitive resistors can be imaged by a change of a voltage value at the voltage measuring device.
  • the resistance value can be continuously increased in one direction until the measured value emerges from the tolerance range.
  • An interval of the resistance value between the entry of the measured value into the tolerance range and the exit of the measured value from the tolerance range can be determined.
  • the resistance value can be continuously reduced by a predetermined proportion, in particular half, of the interval. Or, in the step of changing the resistance value, it can be reduced continuously until the measured value emerges from the tolerance range.
  • An interval of the resistance value between the entry of the measured value into the tolerance range and the output of the measured value out of the tolerance range can be determined. Subsequently, the resistance value can be increased continuously by a predetermined proportion, in particular half, of the interval in order to calibrate the measuring bridge circuit.
  • a resistance band results, in the middle of which the resistance value can be set in order to tune the measuring bridge.
  • An interval may represent a width of the resistance band. The resistance value can be increased, for example, until the tolerance range is left. Then, the resistance value can be reduced again until the predetermined portion of the interval is reached.
  • the present invention further provides a control device which is designed to carry out or implement the steps of the method according to the invention in corresponding devices. Also by this embodiment of the
  • a control device can be understood as meaning an electrical device which processes sensor signals and outputs control signals in dependence thereon.
  • the control unit may have an interface, which may be formed in hardware and / or software.
  • the interfaces can be part of a so-called system ASIC, for example, which contains various functions of the control unit.
  • the interfaces are their own integrated circuits or at least partially consist of discrete components.
  • the interfaces may be software modules that are available for example on a microcontroller in addition to other software modules.
  • a computer program product with program code which can be stored on a machine-readable carrier such as a semiconductor memory, a hard disk memory or an optical memory and is used to carry out the method according to one of the embodiments described above, is also of advantage, the program being on a computer or a device is performed.
  • FIG. 1 is a block diagram of a measuring bridge circuit with a variable resistor arrangement according to an embodiment of the present invention.
  • FIG. 2 shows a flow diagram of a method for calibrating a measuring bridge circuit according to an embodiment of the present invention.
  • the measuring bridge circuit 100 has two branches. In one of the branches, a first variable resistor Ri (x) and the variable resistor 102 are connected in series. Between both a first tap 104 is arranged. In the other of the branches, a second variable-sized resistor R 2 M and a first invariable resistor R fix , 1 connected in series. Between both a second tapping point 106 is arranged. Both branches are parallel to each other between a first terminal 108 and a second terminal 1 10 connected.
  • the variable resistor arrangement 102 has a second immovable resistor R fix , 2 and a memristor M connected in parallel thereto.
  • the measuring bridge circuit 100 is supplied by means of a supply voltage Uv between the first terminal 108 and the second terminal 110 through both branches of the measuring bridge circuit 100.
  • the second terminal 110 can be at a zero potential GND.
  • both branches are in equilibrium with each other, no current flows between the first tap point 104 and the second tap point 106, and no voltage U is applied.
  • the measuring bridge circuit 100 is detuned, for example due to a drift of one of the measured value sensitive resistors Ri (x), R 2 M, although both resistors Ri (x), R 2 M are sensitive to the measured variable, a calibration of the measuring bridge circuit 100 is required. to prevent the flow of current between the taps 104, 106.
  • variable resistor array 102 is changed until equilibrium is restored.
  • a memristor current I M is applied from the memristor terminal to the second terminal 10 by the memristor M.
  • the Memristorstrom l M can have a high DC component. Charge carriers within the memristor M are moved by the memristor current I M , as a result of which a conductivity, that is to say the resistance value of the memristor M, changes.
  • the measuring bridge circuit 100 While the measuring bridge circuit 100 is operated with a voltage U v at a carrier frequency which is higher than a limit frequency of the memristor M, the resistance value of the memrister M does not change. Between the tapping points 104, 106, an amplitude-modulated signal U can then be tapped, which maps a measured variable to the measured variable-sensitive resistors R 1 x), R 2 (x).
  • the method 200 includes a determination step 202 and a modification step 204.
  • determining 202 a measured value of the measuring instrument is determined when the first measuring-size-sensitive resistor is exposed to a physical calibration variable and the second measuring variable sensitive resistance also a physical Kalibrieriere exposed.
  • the calibration variables may be identical, or the same size with opposite signs.
  • the measured variable-sensitive resistors can only be exposed to their own weight or to a base load.
  • the electrical resistance of the second device of the variable resistor array (the memristor) is changed until the measured value is in a tolerance range by a predetermined value.
  • the predetermined value may be a predetermined voltage level, such as zero volts.
  • the tolerance range can be determined, for example, taking into account a measurement inaccuracy.
  • a memristor M can replace a resistor network for matching sensors Ri (x), R 2 (x).
  • a resistance network can be set to the desired value, for example by laser trimming or by Zener zapping at the time of adjustment.
  • the principle of the memristor M can theoretically best be described in comparison with the other passive components. All components are based on the coupling of the electrical charge and its discharge (current) on one side and the magnetic flux and its derivative (voltage) on the other side. On this basis, an electrical resistance corresponds to a derivative of the voltage after the current, an inductance corresponds to a derivative of the flux after the current, a (reciprocal) capacitance corresponds to a derivative of the voltage after the charge, and a memrity corresponds to a derivative of the flux after the charge ,
  • memristors as non-volatile analog memory.
  • the resistance of a memristor can be adjusted (described) with low frequencies and high fields, while the reading is done with small high frequency voltages that do not change the state of the memristor, since the time integral of the current remains constant.
  • a memristor can avoid zener zapping cascades or trim resistor networks that take up relatively large space. The more space is required, the more accurate the adjustment value is to be set, and the greater the matching range, since each part of the cascade or network represents only one binary value.
  • a value set with zener zapping cascades or trim resistor networks is only conditionally correctable, a subsequent re-adjustment by e.g. It is usually only possible to correct the drift of a sensor over its service life in the workshop (see hair cutting).
  • With a memristor as the adjustment element can be stored with a single or a few components with a small footprint an analog adjustment value, which can be corrected later if necessary.
  • a sensor arrangement is shown whose signal is imaged by means of a Wheatstone bridge 100 of two variable resistors R (x) in an electrical value.
  • the variable resistors eg piezoresistive resistors on a pressure sensor membrane
  • R fix two fixed resistors
  • a combination 102 consisting of a normal resistor (R f i X , 2) and a memristor (M) is used instead of the trim resistor network, the memristor can be described at the time of adjustment via an additional terminal. the.
  • R f i X normal resistor
  • M memristor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
  • Micromachines (AREA)

Abstract

La présente invention concerne un circuit en pont de mesure (100) composé d'une première et d'une deuxième branche. Dans la première branche sont couplées en série une première résistance sensible à une grandeur de mesure (R2(x)) et une résistance invariable (Rfix, 1). Un premier point de mesure (104) est disposé entre ladite première résistance sensible à une grandeur de mesure (R2(x)) et ladite résistance invariable (Rfix,1). Dans la deuxième branche sont couplés en série une deuxième résistance sensible à une grandeur de mesure (R1(x)) et un système de résistance variable (102). Le système de résistance variable (102) présente un premier composant (Rfix,2) dont la valeur de résistance électrique est invariable et un deuxième composant (M) dont la valeur de résistance électrique est variable ; le deuxième composant étant couplé en parallèle au premier composant (Rfix,2) afin de faire varier une valeur totale de résistance électrique du système de résistance (102). Entre la deuxième résistance sensible à une grandeur de mesure (R1(x)) et le système de résistance (102) est disposé un deuxième point de mesure (106). La première branche et la deuxième branche sont commutées en parallèle. Un instrument de mesure peut être disposé entre le premier point de mesure (104) et le deuxième point de mesure (106).
EP12769964.3A 2011-11-02 2012-09-06 Système variable de résistance, circuit en pont de mesure et procédé d'étalonnage d'un circuit en pont Withdrawn EP2773971A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011085555A DE102011085555A1 (de) 2011-11-02 2011-11-02 Variable Widerstandsanordnung, Messbrückenschaltung und Verfahren zum Kalibrieren einer Messbrückenschaltung
PCT/EP2012/067374 WO2013064294A1 (fr) 2011-11-02 2012-09-06 Système variable de résistance, circuit en pont de mesure et procédé d'étalonnage d'un circuit en pont

Publications (1)

Publication Number Publication Date
EP2773971A1 true EP2773971A1 (fr) 2014-09-10

Family

ID=47008491

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12769964.3A Withdrawn EP2773971A1 (fr) 2011-11-02 2012-09-06 Système variable de résistance, circuit en pont de mesure et procédé d'étalonnage d'un circuit en pont

Country Status (5)

Country Link
US (1) US9568523B2 (fr)
EP (1) EP2773971A1 (fr)
CN (1) CN104024870B (fr)
DE (1) DE102011085555A1 (fr)
WO (1) WO2013064294A1 (fr)

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US8848337B2 (en) * 2011-02-01 2014-09-30 John R. Koza Signal processing devices having one or more memristors
WO2016085470A1 (fr) * 2014-11-25 2016-06-02 Hewlett-Packard Development Company, L.P. Memristance bipolaire
WO2016122473A1 (fr) * 2015-01-28 2016-08-04 Hewlett Packard Enterprise Development Lp Commutation d'élément à memristance par décharge électrostatique
CN109085427B (zh) * 2015-07-15 2021-04-23 北京东方计量测试研究所 一种模拟等效毫欧至微欧量级直流电阻的桥式电阻
EP3153850A1 (fr) * 2015-10-08 2017-04-12 Nokia Technologies Oy Appareil et procédé associé permettant de détecter un stimulus physique
DE102016206958A1 (de) * 2016-04-25 2017-10-26 Continental Automotive Gmbh Verfahren zum Bestimmen eines Laststroms und Batteriesensor
EP3282484B1 (fr) * 2016-08-10 2020-12-23 X-FAB Semiconductor Foundries GmbH Résistance commandée en tension
CN106557092B (zh) * 2016-11-30 2019-11-26 中国航天空气动力技术研究院 电动舵机实际旋转角度与反馈角度对应关系的调节方法
CN108427017B (zh) * 2018-01-31 2020-07-28 浙江万物工场智能科技有限公司 一种测试系统及终端
GB2587812B (en) * 2019-10-02 2022-09-21 Univ Oxford Brookes Sensor
CN110837016B (zh) * 2019-11-19 2021-09-10 思瑞浦微电子科技（苏州）股份有限公司 精密匹配电阻阵列及其校准方法
CN111337811B (zh) * 2020-03-23 2021-03-30 电子科技大学 一种忆阻器测试电路
CN113156216B (zh) * 2021-04-23 2023-06-13 中国科学院半导体研究所 用于半桥模块寄生电感校准测试的测试装置及方法
CN115951291B (zh) * 2023-03-14 2023-05-23 北京森社电子有限公司 一种闭环霍尔传感器的自动调零设备

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Also Published As

Publication number Publication date
US20140347072A1 (en) 2014-11-27
DE102011085555A1 (de) 2013-05-02
US9568523B2 (en) 2017-02-14
CN104024870B (zh) 2017-01-18
WO2013064294A1 (fr) 2013-05-10
CN104024870A (zh) 2014-09-03

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