EP2727164A1 - Structure d'encapsulation pour composant optoélectronique et procédé d'encapsulation d'un composant optoélectronique - Google Patents

Structure d'encapsulation pour composant optoélectronique et procédé d'encapsulation d'un composant optoélectronique

Info

Publication number
EP2727164A1
EP2727164A1 EP12740316.0A EP12740316A EP2727164A1 EP 2727164 A1 EP2727164 A1 EP 2727164A1 EP 12740316 A EP12740316 A EP 12740316A EP 2727164 A1 EP2727164 A1 EP 2727164A1
Authority
EP
European Patent Office
Prior art keywords
layer
encapsulation
thin
adhesive layer
optoelectronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP12740316.0A
Other languages
German (de)
English (en)
Inventor
Richard Baisl
Dirk Becker
Thomas Dobbertin
Doreen FISCHER
Benjamin Krummacher
Erwin Lang
Tilman Schlenker
Christian Schmid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osram Oled GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=46582662&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EP2727164(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from DE102011079160.4A external-priority patent/DE102011079160B4/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of EP2727164A1 publication Critical patent/EP2727164A1/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

Definitions

  • Encapsulation structure for an optoelectronic component and a method for encapsulating an optoelectronic component.
  • OLEDs organic light-emitting diodes
  • OLED displays OLED displays
  • O solar cells organic solar cells or photovoltaic cells
  • OOV Organic Photovoltaic Cells
  • the sealing of the component or the protection of the component from mechanical damage can be achieved by means of an encapsulation of the component.
  • organic optoelectronic components eg OLEDs
  • the encapsulation by means of glass cavities is known.
  • a glass lid is glued to the device with a special adhesive.
  • This technique can largely prevent the penetration of harmful influences.
  • water and oxygen binding materials in the Cavity introduced (eg glued).
  • getters water and oxygen binding materials
  • non-transparent zeolite getters can be glued into the cavity. The getters can get the water and the
  • the glass lid can simultaneously provide sufficient mechanical protection.
  • Fig. 1 shows an arrangement 100 'with an organic
  • OLED Light-emitting diode
  • the OLED 100 has a substrate glass 101. On the
  • Substrate glass 101 is a functional layer stack (OLED stack) 102 is arranged.
  • the functional layer stack 102 may include one or more organic functional layers (i.
  • Electrodes may be provided for electrically contacting the organic functional layers.
  • Encapsulation glass 103 also as cover glass or Capglas
  • a getter 105 is introduced (by sticking to the functional layer stack 102
  • Functional layer stack 102 which is intended to absorb water and / or oxygen penetrating through the bond between substrate 101 and encapsulation glass 103 and in this way to prevent the water and / or oxygen from affecting the layer (s) of functional layer stack 102
  • the OLED 100 is designed as a bottom emitter, i. the light emission takes place through the
  • the getter 105 may be made of a nontransparent material (e.g., zeolite).
  • Fig. 2 shows an arrangement 200 'with an organic
  • Light-emitting diode (OLED) 100 with conventional encapsulation by means of glass cavity according to another example.
  • the assembly 200 differs from the assembly 100' shown in FIG. 1 in that instead of a single large getter 105 (as in FIG. 1), two smaller getters 205 are inserted into the cavity 104.
  • the two getters 205 are on the inside of the encapsulating glass 103 in
  • the OLED 100 can be embodied as a transparent OLED (light emission both downwards through the substrate glass 101 and upwards through the encapsulation glass 103) or as a top emitter (light emission only upwards through the encapsulation glass 103).
  • a transparent OLED light emission both downwards through the substrate glass 101 and upwards through the encapsulation glass 103
  • a top emitter light emission only upwards through the encapsulation glass 103.
  • one or more perforated getters in the cavity 104 may also be provided
  • Manufacturing flexible (i.e., flexible) components e.g.
  • optoelectronic components for example organic optoelectronic components such as e.g. OLEDs, by the application of one or more thin films (thin layers or thin layers) against water and
  • Oxygen seal (so-called thin-film encapsulation). Such a thin-layer encapsulation can be mechanical
  • a cover layer as a mechanical protective layer, wherein an adhesive layer (e.g., lamination adhesive layer) for adhesion promotion is provided between the thin-film encapsulation and the cover layer.
  • an adhesive layer e.g., lamination adhesive layer
  • Embodiments may include the application of the cover layer be realized, for example, by surface laminating a flat cover glass. Through the glass can a
  • Thin-layer encapsulation can be achieved.
  • an encapsulation structure formed in this way which, as described above, has a thin-layer encapsulation, an adhesive layer and a cover layer, is a simple,
  • optoelectronic device such as e.g. OLEDs
  • the occurrence of defects due to any particles on or on the thin film encapsulant or on or in the adhesive layer can be reduced or prevented, as described below.
  • Thin film technology is also suitable for flexible devices (e.g., flexible OLEDs) on film substrates (e.g., steel foil or polymeric film substrates).
  • film substrates e.g., steel foil or polymeric film substrates.
  • films may be laminated to the substrate film or the substrate film may be laminated between two packaging films.
  • Particle tolerant encapsulation and protective coating for optoelectronic devices such as organic optoelectronic devices such.
  • OLEDs provided.
  • Encapsulation structure for optoelectronic components for example, organic optoelectronic components such as OLEDs, provided, are wholly or partially avoided in the damage of the optoelectronic components or by particle contamination.
  • OLEDs organic optoelectronic components
  • an opto-electronic device such as an organic opto-electronic device, e.g. an OLED.
  • Encapsulation structure for an optoelectronic device to: a thin film encapsulation for the protection of
  • Impurities an adhesive layer formed on the thin film encapsulant, and a cover layer formed on the adhesive layer for protecting the
  • Thin-film encapsulation and / or the optoelectronic component from mechanical damage Thin-film encapsulation and / or the optoelectronic component from mechanical damage.
  • a method for encapsulating an optoelectronic component comprises:
  • Encapsulation arrangement on an optoelectronic device and an encapsulation structure The optoelectronic
  • Component has at least one functional layer.
  • the encapsulation structure is formed on or above the at least one functional layer.
  • the encapsulation structure may be according to one or more of those described herein
  • Embodiments be formed.
  • the various embodiments of the exemplary embodiments apply in the same way, as far as appropriate, both for the encapsulation structure for an optoelectronic component and for the encapsulation arrangement and the method for encapsulating an optoelectronic component.
  • layer or “layer structure” as used herein may be a single layer or a layer
  • Layer sequence (layer stack or layer stack) of several thin (sub) layers denote.
  • functional layers of the optoelectronic component for example organic functional layers of a
  • organic optoelectronic component be formed of several (sub) layers. But other layers described herein may also be formed of multiple (sub) layers.
  • a first layer is arranged directly in direct mechanical and / or electrical contact on another layer.
  • Layer can also be indirectly on another layer
  • Such layers can serve, for example, to further improve the functionality and thus the efficiency of the optoelectronic component.
  • adheresive layer as used herein may refer to a layer or layer structure comprising or consisting of one or more adhesive materials (eg, adhesive) . These adhesive layer (s) (eg, adhesive) of the adhesive layer may have two or more
  • Elements e.g., layers
  • the adhesion mediation can by the
  • Adhesive layer which may be at least partially formed between the elements to be joined (e.g., layers).
  • a “functional layer” of an optoelectronic component can be understood as meaning a layer which is responsible for charge transport and for
  • Functional layer of the optoelectronic component formed as an organic functional layer.
  • An “organic functional layer” may be emitter layers, for example with fluorescent and / or
  • phosphorescent emitters included. Examples of emitter materials used in the
  • organic or organometallic compounds such as derivatives of polyfluorene, polythiophene and polyphenylene (e.g., 2- or 2,5-substituted poly-p-phenylenevinylene) as well as
  • Metal complexes for example iridium complexes such as blue phosphorescent FIrPic (bis (3,5-difluoro-2- (2-pyridyl) phenyl- (2-carboxypyridyl) iridium III), green
  • spin coating are separable.
  • the emitter materials may be suitably embedded in a matrix material.
  • Optoelectronic component may for example be selected so that the optoelectronic device
  • the emitter layer can have several
  • emitter materials emitting different colors (for example blue and yellow or blue, green and red),
  • the emitter layer may also consist of several elements
  • Sublayers be constructed, such as a blue fluorescent emitter layer, a green phosphorescent emitter layer and a red phosphorescent emitter layer. By mixing the different colors, the emission of light can result in a white color impression. Alternatively, it can also be provided in the beam path through this
  • Layers generated primary emission to arrange a converter material that at least partially absorbs the primary radiation and emits a secondary radiation of different wavelength, so that from a (not yet white)
  • the optoelectronic component can generally have further organic functional layers which serve to further improve the functionality and thus the efficiency of the optoelectronic component.
  • organic functional layers serve to further improve the functionality and thus the efficiency of the optoelectronic component.
  • organic functional layers serve to further improve the functionality and thus the efficiency of the optoelectronic component.
  • Electrode as well as the charge carrier and exciton transport to improve.
  • Organic functional layers may be provided and the embodiments are not limited to a specific type of functional layer (s). Under “impurities” or “contaminations” can in
  • substances, substance compounds, particles, substances, etc. are generally understood to be undesirable during a production process or their presence in a processed component (device), since they negatively influence, for example, the production process and / or the component in its component Affect functionality.
  • Impurities in the manufacture of an optoelectronic device e.g., an organic optoelectronic device
  • Component act.
  • chemical constituents of the environment For example, under "chemical contaminants" chemical constituents of the environment
  • optoelectronic component e.g., organic
  • a "thin-layer encapsulation" may, for example, be a layer or a layer
  • the thin-layer encapsulation is designed such that it can be absorbed by atmospheric substances such as water or water
  • the barrier effect is achieved in the thin-layer encapsulation essentially by one or more thin layers, which are part of the thin-layer encapsulation.
  • the layer or the individual layers of the thin-layer encapsulation may, for example, have a thickness of less than or equal to a few 100 nm.
  • the thin-layer encapsulation consists of the layer (s) responsible for the barrier effect of the thin-layer encapsulation.
  • Layer (s) may also be referred to as barrier thin layer (s) or barrier thin film (s).
  • the thin-layer encapsulation may be embodied as a single layer (in other words, as
  • Single layer may be formed.
  • the thin-layer encapsulation having a plurality of sub-layers formed on each other.
  • the thin-layer encapsulation may be formed as a layer stack (stack), which has a Has a plurality of sub-layers (also referred to as barrier thin films).
  • Thin film encapsulation may be formed, for example, by a suitable deposition process, e.g. by atomic layer deposition (ALD) according to an embodiment, e.g. one
  • PEALD plasma-enhanced atomic layer deposition
  • PECVD plasma-enhanced chemical vapor deposition
  • PLCVD plasmaless chemical vapor deposition
  • ALD atomic layer deposition process
  • Thin-layer encapsulation comprising a plurality of sublayers, all sublayers being formed by means of an atomic layer deposition process.
  • a layer sequence comprising only ALD layers may also be referred to as "nanolaminate”.
  • Thin-film encapsulation comprising a plurality of sub-layers, one or more sub-layers of the thin-layer encapsulation by means of a deposition method other than one
  • Atomic layer deposition processes are deposited, for example by means of a chemical vapor deposition process.
  • the thin film encapsulation may, according to one embodiment, have a layer thickness of about 1 nm to about 10 ym, for example a layer thickness of about 30 nm to about 1 ym, according to one embodiment,
  • a layer thickness of about 300 nm to about 600 nm according to an embodiment for example, about 450 nm according to an embodiment.
  • Thin-layer encapsulation has multiple sub-layers, all sub-layers may have the same layer thickness. According to another embodiment, the individual
  • Partial layers of the thin-film encapsulation have different layer thicknesses.
  • at least one of the partial layers may have a different layer thickness than one or more other of the partial layers.
  • a layer (or sub-layer) of the thin film encapsulant deposited by an atomic layer deposition (ALD) method may have a layer thickness in the range of about 1 nm to about 1000 nm, for example, a layer thickness of about 10 nm to about 100 nm according to one embodiment, for example approximately 50 nm according to an embodiment.
  • a layer (or sub-layer) of the thin film encapsulant deposited by a chemical vapor deposition (CVD) method may have a layer thickness in the range of about 10 nm to about 10 ym, for example, a layer thickness of about 30 nm to about 1 ym according to one embodiment, for example a layer thickness of about 100 nm to about 500 nm according to an embodiment, for example about 400 nm according to an embodiment.
  • the thin-layer encapsulation or the individual sub-layers of the thin-layer encapsulation may, according to one embodiment, be formed as a transparent layer. In other words, the thin-layer encapsulation (or the individual
  • a transparent or transparent material or a transparent layer may, for example, be understood as meaning a material or a layer which is transparent or permeable to light in the visible wavelength range.
  • a non-transparent material or a non-transparent layer may, for example, be understood as meaning a material or a layer which is not transparent or impermeable to light in the frame
  • the optoelectronic component as a top emitter (or as a combination of top emitter and bottom emitter)
  • individual partial layers of the thin-layer encapsulation be formed as a transparent layer (s).
  • individual sub-layers of the thin-film encapsulation be formed as a non-transparent layer (s).
  • Thin-layer encapsulation can each be a material
  • Partial layers one or more of the partial layers of the
  • the oxide, nitride or oxynitride may, for example, continue
  • Sublayers may include, for example, silicon oxide (SiO x ), such as S 1 O 2 , silicon nitride (Si x N y ), such as S 1 2 N 3 ,
  • Alumina such as Al 2 O 3 , aluminum nitride, tin oxide,
  • Thin-layer encapsulation which has several sub-layers, all sub-layers have the same material or consist of it. According to another embodiment, the individual partial layers of the thin-layer encapsulation
  • At least one of the partial layers can comprise or consist of another material as one or more other of the partial layers.
  • particle contamination may include, for example, contamination by microscopic particles
  • Dimensions (eg diameter) in the micrometer range eg, dust particles with dimensions in the micrometer range, eg particles with a diameter in the range of about 0.1 ym to about 100 ym, for example in the range of about 1 ym to about 10 ym.
  • particle contaminants can occur, for example, by not always it is possible to ensure 100% purity in the process chamber (eg reactor) during a component manufacturing process. Too unwanted
  • Particulate contamination can occur, for example, if a relatively long period of time lies between the deposition process of a first layer and the deposition process for the subsequent layer in the production of a layer structure which has a plurality of layers. In this case it is possible that in the time between the two deposition processes
  • the ⁇ is a ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇
  • Component are present. Furthermore, according to various embodiments, the applied on a thin-film encapsulation granted
  • Adhesive layer an inclusion of existing on or on the surface of the thin-film encapsulation particles or
  • Particulate contaminants may be caused
  • the adhesive layer has a
  • Adhesive layer of a curable adhesive material (for example, a curable adhesive) exist.
  • curable adhesive material or “hardening adhesive material” can be understood as meaning, for example, an adhesive material which has moved from a first state of lower mechanical hardness or strength (uncured state) to a second state compared to the first state , higher mechanical hardness or strength (cured state) can pass or be transferred.
  • the transition from the first (uncured) state to the second (cured) state may be referred to as "curing.”
  • An adhesive layer that is a curable adhesive material
  • the curable adhesive material of the adhesive layer is a UV-curing adhesive material
  • thermosetting resin
  • UV radiation Ultraviolet radiation cure or cured.
  • the UV radiation used for curing can be any UV radiation used for curing.
  • Embodiment for example in the range of about 360 nm to about 390 nm according to an embodiment.
  • the UV radiation used may have a dose that
  • Embodiment e.g. a dose in the range of about
  • Embodiment eg a dose in the range of approximately 5000 mJ / cm 2 to about 7000 mJ / cm 2 according to one embodiment, eg a dose of about 6000 mJ / cm 2 according to one embodiment.
  • the UV-curing adhesive material can be chosen, for example, such that the parameters of the UV radiation used for curing (eg wavelength, dose) can be chosen such that a possible damage to the optoelectronic component by the UV radiation can be avoided.
  • Adhesive material of the adhesive layer may be formed as a temperature-curing adhesive material.
  • the curable adhesive material can be hardened or hardened by means of a temperature treatment (in other words, by means of tempering or heating).
  • the curable adhesive material may comprise a temperature-curable adhesive material (e.g.
  • thermosetting adhesive that at a
  • the temperature used for the curing may be, for example, about 10 ° C to about 140 ° C according to
  • Embodiment for example, about 50 ° C to about 100 ° C according to an embodiment, for example, about 80 ° C according to an embodiment.
  • the duration of the temperature treatment may be, for example, about 1 minute to about 300 minutes according to an embodiment, for example, about 30 minutes to about 100 minutes according to an embodiment, for example, about 60 minutes according to an embodiment.
  • the curable adhesive material of the adhesive layer is a self-curing adhesive material
  • a self-hardening adhesive material can be understood as meaning, for example, an adhesive material which is free from external influences (for example heat treatment or UV irradiation) under normal room conditions
  • Adhesive material can be seen in that for curing the adhesive material, for example, no means for
  • Annealing (heating) or UV irradiation is required. Thus, costs can be saved.
  • epoxy adhesive acrylic adhesive
  • silicone adhesive silicone adhesive
  • the adhesive layer is formed such that on the surface of the adhesive layer
  • Thin-film encapsulation located particle contaminants are at least partially enclosed by the adhesive layer or at least partially embedded in the adhesive layer.
  • the adhesive layer may be formed so that the particle contaminants are completely embedded in the adhesive layer.
  • the adhesive layer may further be formed to have a substantially planar (planar) surface.
  • the adhesive layer may have a flat surface over its entire lateral extent.
  • the adhesive layer has a
  • the adhesive layer may have a layer thickness
  • the layer thickness can be any thickness of the particulate contaminants.
  • the layer thickness of the adhesive layer can be clearly chosen so that possibly on or on the surface of the adhesive layer
  • the layer thickness of the adhesive layer can be selected such that existing on or on the surface of the thin-layer encapsulation
  • Particle impurities are completely surrounded or enclosed by the adhesive material of the adhesive layer and in particular vividly not “protrude” from this.
  • the adhesive layer may, for example, have a layer thickness of about 1 ym to about 500 ym, for example about 10 ym to about 100 ym according to an embodiment, for example about 15 ym to about 35 ym according to an embodiment, for example 25 ym according to one
  • the cover layer may also be referred to as a mechanical protective layer or a mechanical protective film, since it may serve to protect the thin-film encapsulation and / or the optoelectronic component from mechanical stresses or damage (for example by scratching).
  • the cover layer has a rigid
  • a cover layer formed as a rigid layer can also be called a cover plate.
  • Glass layer formed cover layer can also be referred to as cover glass or Capglas.
  • the cover layer has a flexible layer or is formed as a flexible layer, for example as a film, for example as a transparent film, alternatively as a non-transparent film.
  • the cover layer may, for example, have a (transparent or non-transparent) heat-conducting foil or be designed as such according to an embodiment.
  • a trained as a heat conducting cover layer can for
  • the optoelectronic device e.g., an OLED
  • the cover layer has a lacquer layer.
  • the cover layer may be formed, for example, as a lacquer layer (for example as a transparent lacquer layer or as a non-transparent lacquer layer).
  • the lacquer layer may comprise or consist of a lacquer material which is suitable for forming a mechanical protective layer, for example a polyacrylic lacquer material, for example a polyacrylic protective lacquer (for example a transparent polyacrylic protective lacquer), alternatively other suitable lacquer materials or lacquers.
  • the cover layer may be formed as a transparent layer, alternatively as a non-transparent layer.
  • the optoelectronic component as a top emitter or as
  • the cover layer may be formed as a transparent layer.
  • the cover layer is or are laminated on the thin-layer encapsulation by means of the adhesive layer.
  • the topcoat may be in this case
  • a self-adhesive protective film e.g. a polycarbonate film (e.g., having a layer thickness of about 300 ⁇ m, alternatively with a different layer thickness), with the adhesive layer (adhesive film) (e.g.
  • the self-adhesive protective film may comprise the adhesive layer and the cover layer.
  • the adhesive layer is a first layer. According to one embodiment, the adhesive layer
  • the scattering particles may for example be embedded in the adhesive layer.
  • the scattering particles can, for example, in the as
  • Adhesive material of the adhesive layer serving as matrix material may be dispersed as a volume spreader.
  • the scattering particles may be, for example, a metal oxide such as titanium oxide or aluminum oxide such as corundum, and / or glass particles and / or plastic particles, one of the matrix material
  • the scattering particles may have cavities and be embodied for example in the form of plastic hollow spheres.
  • the scattering particles can for example
  • the scattering particles can, for example, bring about an improvement in the light extraction.
  • the adhesive layer can be designed so that an optical improvement can be achieved by cavity effects.
  • the adhesive layer can be designed so that an optical improvement can be achieved by cavity effects.
  • the adhesive layer is on or above the
  • Cover layer formed at least one additional layer. There may be several additional layers (for example
  • one above the other may be formed on or above the cover layer.
  • the thermal pad may serve to homogenize and / or remove heat generated during operation of the optoelectronic device (e.g., an OLED).
  • the at least one additional layer has a light extraction layer.
  • Lichtauskoppel für may for example have scattering particles, which may be formed, for example, as described above in connection with the adhesive layer.
  • Adhesive layer comprises or consists of a curable adhesive material, the adhesive layer is not in one
  • hardened adhesive layer can by properties such as interfacial tension or wetting power, layer thickness and viscosity inclusion of
  • the cover layer is applied to the not (or not completely) cured adhesive layer. According to various embodiments takes place after the
  • the curing of the adhesive layer can take place, for example, by means of irradiation with UV light (when using a UV-curing material for the adhesive layer).
  • Annealing heating with a predeterminable temperature take place (when using a temperature-curing
  • Self-curing adhesive material the curing without external influence such. UV radiation or heat treatment
  • Particles can be avoided. According to one embodiment, this is the optoelectronic
  • the optoelectronic component designed or set up as an organic optoelectronic component.
  • the optoelectronic component designed or set up as an organic optoelectronic component.
  • the device may be an organic light emitting diode (OLED), organic
  • Solar cell or photovoltaic cell be designed as an organic phototransistor or the like.
  • the optoelectronic component may comprise a substrate.
  • a substrate may be used for
  • the substrate may be a transparent substrate. However, the substrate may also be a non-transparent substrate.
  • the substrate glass quartz, sapphire,
  • Plastic film (s), metal, metal foil (s), silicon wafers or other suitable substrate material As a substrate is understood in various embodiments, the layer on which in the manufacture of the
  • Layers are applied. Such subsequent layers can eg in an optoelectronic device or be layers required for a radiation-emitting device for radiation emission.
  • the substrate is rigid
  • the substrate may be formed as a glass substrate.
  • the substrate is designed as a flexible (in other words, flexible) substrate.
  • the substrate may be used as a film substrate
  • ⁇ be formed, e.g. as a steel foil substrate or as a polymer foil substrate according to one embodiment.
  • the substrate may be formed as a transparent substrate (e.g., a transparent film or a glass substrate),
  • non-transparent substrate e.g.
  • Silicon wafer according to an embodiment.
  • a first electrode is provided between the substrate and the at least one functional layer
  • Electrode may be applied on or over the substrate, and the at least one functional layer may be applied on or above the first electrode.
  • the first electrode may also be referred to as a bottom electrode or as a base contact.
  • the first electrode may also be referred to as
  • the first electrode may be an anode, alternatively a cathode.
  • a second electrode is formed between the at least one functional layer and the thin-layer encapsulation.
  • the second electrode may be applied on or above the at least one functional layer, and the thin-layer encapsulation may be on or above the be applied to the second electrode.
  • the second electrode may also be referred to as a cover electrode or as a cover contact.
  • the second electrode may also be referred to as a cover-side electrode or a cover-side contact.
  • the second electrode may be a cathode (e.g., if the first electrode is an anode), alternatively an anode (e.g., if the first electrode is a cathode).
  • the first electrode and the second electrode may be electrically contacted in a suitable manner.
  • the first electrode and / or the second electrode may / may be transparent.
  • the first electrode and / or the second electrode may alternatively / ⁇ can not be transparent.
  • the first electrode may be transparent and the second electrode (cover electrode) may be non-transparent.
  • the second electrode may be formed as a reflective electrode (reflective contact), in other words as an electrode, which substantially or completely reflects the radiation emitted by the at least one functional layer.
  • the second electrode may be transparent and the first electrode (base electrode) non-transparent.
  • the first electrode may be formed as a reflective electrode (reflective contact), in other words as an electrode, which is the one of the at least one
  • the first electrode and the second electrode may be formed in each case as a transparent electrode.
  • the first electrode and / or the second electrode can / can be applied, for example, by means of a deposition method. According to one embodiment, the first electrode and / or the second electrode can / can by means of
  • the first electrode and / or the second electrode may have a layer thickness in a range of about 5 nm to a few ym, for example, a layer thickness in a range of
  • the first electrode and / or the second electrode may / may have a different layer thickness.
  • transparent conductive oxide e.g., ITO (Indium Tin Oxide)
  • ITO Indium Tin Oxide
  • transparent electrodes based on thin metal layers may have layer thicknesses in the range of about 10 nm to about 30 nm.
  • the layer thickness may be any suitable thickness.
  • Electrode approaches can cause different electrode layer thicknesses.
  • the first electrode and / or the second electrode may be formed of a material or comprise a material selected from metals such as aluminum, barium,
  • Tin oxide Tin oxide, cadmium oxide, titanium oxide, indium oxide or indium ⁇ doped tin oxide (ITO), aluminum-doped zinc oxide (AZO), Zn2Sn04, CdSnC> 3, ZnSnC> 3, MgIn2Ü4, Galn03, or Zn2ln2Ü5
  • the first electrode and / or the second electrode may comprise or consist of another suitable material.
  • opto-electronic device e.g., organic
  • opto-electronic device such as e.g. OLED
  • bottom emitter be executed.
  • bottom emitter or “bottom emitting optoelectronic device” refers to an embodiment that is transparent to the substrate side of the optoelectronic device.
  • at least the substrate and between the substrate and the at least one can be transparent to the substrate side of the optoelectronic device.
  • Functional layer formed layers for example, formed between the substrate and functional layer (s) electrode (base electrode) be made transparent.
  • the optoelectronic component embodied bottom-emitter can be used
  • optoelectronic component such as an OLED
  • the optoelectronic component may be designed as a "top emitter”.
  • top emitter or “top emitting
  • Optoelectronic component refers, for example, to an embodiment which faces the substrate (in other words, FIG
  • the layers formed on or above the at least one functional layer of the optoelectronic component are made transparent.
  • the layers formed on or above the at least one functional layer of the optoelectronic component are made transparent.
  • Adhesive layer, cover layer be transparent.
  • An optoelectronic component embodied as a top emitter can accordingly be used, for example, in the functional layers (for example organic functional layers in the case of an organic layer)
  • optoelectronic device such as e.g. an OLED
  • Component according to various embodiments may advantageously have a high light outcoupling and a very low angular dependence of the radiation density.
  • Illuminations such as room lights, are used.
  • the optoelectronic component is generally capable of producing the light generated in the functional layers (eg the organic functional layers in the case of an organic optoelectronic component such as an OLED) in both directions - that is to say both toward the substrate side and towards the cover side emit.
  • the functional layers eg the organic functional layers in the case of an organic optoelectronic component such as an OLED
  • a third electrode is provided in the optoelectronic component, which is arranged between the first electrode and the second electrode.
  • the third electrode can act as an intermediate contact. It can serve to increase a charge transport through the layers of the optoelectronic component and thus to improve the efficiency of the optoelectronic component.
  • the third electrode can be designed as an ambipolar layer. It can be used as cathode or anode
  • the third electrode may be different according to
  • an emitter layer and one or more further organic functional layers are contained as organic functional layers.
  • the further organic functional layers can be selected from the group consisting of
  • hole blocking layers electron injection layers, electron transport layers, and electron blocking layers.
  • Functional layers are known per se to the person skilled in the art.
  • the (Organic) functional layers can preferably be applied by means of thermal evaporation.
  • the further (organic) functional layers can advantageously improve the functionality and / or efficiency of the optoelectronic component.
  • Barrier layers may have) as protection against
  • Adhesive layer on the thin-layer encapsulation e.g.
  • a cover layer (mechanical protective layer) is formed (e.g.
  • Cover layer using the previously applied on the cover layer (e.g., on the underside of the cover layer)
  • FIG. 1 shows an arrangement with an organic light-emitting diode
  • Figure 2 shows an arrangement with an organic light emitting diode (OLED) and conventional encapsulation by means of glass cavity according to another example;
  • OLED organic light emitting diode
  • FIG. 3 shows an encapsulation structure for a
  • Optoelectronic component according to an embodiment 4 shows an encapsulation according to another
  • FIG. 5 shows a method for encapsulating a
  • Figure 6 shows an encapsulation according to another
  • FIG. 7A shows a detail of that shown in FIG
  • FIG. 7B shows another detail of that shown in FIG.
  • FIG. 3 shows an encapsulation structure 300 for a
  • Optoelectronic component according to a
  • Encapsulation structure 300 a thin-film encapsulation 301 to protect an optoelectronic device before chemical contaminants.
  • the thin-film encapsulation 301 may comprise one or more thin layers (also called
  • Barrier layers may further be prepared according to one or more of those described herein
  • Embodiments be formed.
  • the ⁇ is a ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇
  • Encapsulation structure 300 further includes an on
  • the adhesive layer 302 may comprise or consist of an adhesive material, and may further be constructed in accordance with one or more embodiments described herein
  • Encapsulation structure 300 further comprises a cover layer 303 applied to the adhesive layer 302 for protecting the thin-film encapsulation 301 from mechanical damage.
  • the cover layer 303 may be formed in accordance with one or more embodiments described herein.
  • cover layer for example as a rigid cover layer (e.g., glass topcoat) or as a flexible cover layer (e.g., as a film), and / or as a transparent cover layer (e.g., coverslip or transparent film) or as a nontransparent cover layer (e.g.
  • the cover layer 303 for example, be part of a self-adhesive film, which by means of
  • the adhesive layer 302 may comprise a curable adhesive material, eg, a UV-curing adhesive.
  • the adhesive layer 302 can be applied in the uncured (eg liquid) state and can subsequently be hardened or hardened (eg after the application of the cover layer 303).
  • the adhesive layer 302 may be configured such that particle contaminants on the top side 301 a of the thin-layer encapsulation 301 from the adhesive layer 302
  • the applied adhesive layer 302 has a substantially planar (upper) surface 302a
  • Layers e.g., functional layers of an optoelectronic device to be encapsulated (e.g., OLED)), and damage them.
  • FIG. 4 shows an encapsulation arrangement 400 'according to a further exemplary embodiment.
  • the ⁇ is a ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇
  • Encapsulation 400 an optoelectronic device 400 and an encapsulation structure 300 on.
  • Encapsulation structure 300 may be formed in accordance with one or more of the embodiments described herein.
  • the ⁇ is a ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇
  • optoelectronic component 400 at least one
  • the at least one functional layer 402 may be as a single
  • Layer (as shown in Fig. 4) or as a layer stack (also referred to as a functional layer stack) may be formed with a plurality of sub-layers.
  • Functional layer 402 may be further formed according to one or more of the embodiments described herein.
  • the ⁇ is a ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇
  • Encapsulation structure 300 may be formed on or above the at least one functional layer 402 of the optoelectronic component 400. According to various embodiments, the
  • optoelectronic component 400 above and / or below the at least one functional layer 402 one or more additional layers.
  • the ⁇ is a ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇
  • Optoelectronic device 400 having a substrate 401.
  • the substrate 401 may be formed in accordance with one or more of the embodiments described herein.
  • the ⁇ is a ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇
  • Optoelectronic component 400 further comprises a first electrode 403.
  • the first electrode 403 may according to a
  • Embodiment between the substrate 401 and the at least one functional layer 402 may be formed (for example, on the
  • the first electrode 403 may be further formed according to one or more of the embodiments described herein.
  • the ⁇ is a ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇
  • optoelectronic component 400 further comprise a second electrode 404.
  • the second electrode 404 may, according to one embodiment, be formed between the at least one functional layer 402 and the thin-layer encapsulation 301
  • the thin-film encapsulation 301 may be formed on the second electrode 404, for example, as shown in FIG. 4.
  • the second electrode 404 may be further configured according to one or more of the embodiments described herein.
  • the optoelectronic component 400 may be formed in accordance with one or more of the embodiments described herein, for example as an organic optoelectronic
  • Component such as OLED, for example, as a top emitter or as a bottom emitter or as a combination of top emitter and bottom emitter, according to one or more of the embodiments described herein.
  • FIG. 5 shows a flow chart 500, in which a method for encapsulating an optoelectronic component according to a further exemplary embodiment is illustrated.
  • a thin film encapsulation is formed on or over an optoelectronic device (e.g., on or over at least one functional layer of the optoelectronic device) to protect the optoelectronic device from chemical contaminants.
  • the thin-layer encapsulation may be carried out according to one or more of those described herein
  • an adhesive layer is formed on the thin film encapsulant.
  • the adhesive layer may be set up according to one or more embodiments described herein.
  • a cover layer is formed on the adhesive layer to protect the thin film encapsulation and / or the
  • the topcoat may be in accordance with one or more of the herein
  • Adhesive layer on an applied cover layer e.g.
  • Cover layer are applied with the adhesive layer applied thereto on the thin-film encapsulation, so that the
  • Adhesive layer is formed between the thin-film encapsulation and the cover layer.
  • the cover layer using the on the Cover layer applied adhesive layer on the
  • Thin-layer encapsulation be laminated.
  • the adhesive layer is
  • the cover layer prior to bonding the cover layer to the thin-layer encapsulation, the
  • Adhesive layer partially on the thin-film encapsulation and partially applied to the cover layer.
  • FIG. 6 shows an encapsulation arrangement 600 'according to a further exemplary embodiment.
  • the encapsulation arrangement 600 has an optoelectronic component 600 and one on the optoelectronic component
  • Device 600 formed encapsulation structure 300 on.
  • the optoelectronic component 600 is as organic
  • Light-emitting diode is formed and has a substrate 601 and a formed on the substrate 601 layer stack 610.
  • the layer stack 610 can also be referred to as an OLED stack or OLED stack. According to alternative
  • the optoelectronic component 600 may be embodied as another optoelectronic component (for example, another organic optoelectronic component) than an OLED, the following description of the structure of the encapsulation arrangement 600 'analogously also applying in this case.
  • another optoelectronic component for example, another organic optoelectronic component
  • the substrate 601 is according to the embodiment shown as a glass substrate (also referred to as a substrate glass)
  • the OLED stack 610 may include one or more organic compounds
  • the OLED stack 610 may include a first electrode and a second electrode, the first electrode being between the substrate 601 and the organic one
  • Functional layer (s) may be formed and the second electrode between the (the) organic functional layer (s) and the encapsulation structure 300 may be formed.
  • the ⁇ is a ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇
  • optoelectronic device 600 additionally has one or more electrical contacts (not shown in FIG. 6) for electrically contacting the OLED stack 610, e.g. for electrically contacting the first electrode and the second electrode of the OLED stack 610.
  • the encapsulation structure 300 has a
  • Thin-film encapsulation 301 which is formed on the OLED stack 610 and on the substrate 601. According to the exemplary embodiment shown, the thin-film encapsulation 301 is formed on the upper side 610 a and side surfaces 610 b of the OLED stack 610 such that the OLED stack 610 is encapsulated by the thin-layer encapsulation 301.
  • Thin-film encapsulation 301 Thin-film encapsulation 301, a first barrier thin film 311 and one on the first barrier thin film 311nd
  • Section 650 Section 650 and a second section 655 of in
  • FIG. 6 show encapsulation assembly 600 '. According to the embodiment shown, the first
  • Barrier thin film 311 as one by means of a chemical vapor deposition (CVD) method, for example by means of a plasma-enhanced chemical vapor deposition (PECVD) method, formed silicon nitride layer formed and may for example have a layer thickness of a few hundred nanometers, for example about 400 nm according to an embodiment.
  • the second barrier thin film 312 is formed as an aluminum oxide film formed by an atomic layer deposition (ALD) method and may have, for example, a film thickness of several tens of nanometers, eg, about 50 nm according to an aspect.
  • ALD atomic layer deposition
  • the thin-film encapsulation 301 has a thick CVD layer (first barrier thin layer 311) and an ALD layer thinner compared with the CVD layer 311 formed thereon
  • Barrier thin film 312 may be formed by other deposition methods and / or other materials
  • the first barrier film 311 may be formed by ALD
  • the second barrier thin film 312 may be formed by CVD. Further, in addition to the first barrier thin film 311 and the second
  • Barrier thin film 312 additional barrier thin layers may be provided, which may be formed for example by means of CVD and / or ALD. Generally, the
  • Thin-layer encapsulation 301 have a layer stack with an arbitrary number of sub-layers (barrier thin layers), wherein each of the sub-layers of the layer stack (independently of the other sub-layers) may optionally be formed as a CVD layer or as an ALD layer.
  • the layer stack may have any desired sequence of CVD layers and / or ALD layers.
  • the encapsulation structure 300 further comprises an adhesive layer
  • the adhesive layer 302 may have a thickness in the
  • Micrometer range for example a layer thickness of a few tens of microns, for example about 25 ym.
  • the adhesive layer 302 may have a different layer thickness value.
  • the adhesive layer 302 may comprise a curable material (eg, a UV-curable adhesive) and may have been applied to the thin film encapsulant 301 in the uncured (eg, liquid) state and subsequently cured (eg, after a cover layer 303 of the encapsulation structure 300 has been applied) be (eg by means of UV radiation in the case of a UV-curing adhesive).
  • a curable material eg, a UV-curable adhesive
  • the encapsulation structure 300 further includes a capping layer 303 formed on the adhesive layer 302.
  • the cover layer is
  • Encapsulation glass formed.
  • the cover layer 303 or the encapsulation glass 303 may have been adhesively bonded to the thin-layer encapsulation 301 by means of the adhesive layer 302.
  • the adhesive layer 302 may have been applied to the underside 303b of the cover layer 303, and the
  • Covering layer 303 may be applied by means of the coating applied thereto
  • Thin film encapsulation 301 may have been applied, and the cover layer 303 may be subsequently applied to the adhesive layer 302. According to yet another
  • the adhesive layer 302 partly on top 301a of the thin film encapsulation 301 and partially on the bottom 303b of the top layer 303. Compared to a conventional encapsulation with
  • the thick CVD layer (first barrier film 311) and the adhesive layer 302 may each be for embedding particulate contaminants 710a, 710b, 710c , 710d.
  • Encapsulation assembly 600 is shown as having a first particle 710a located at the top 610a of the OLED stack 610, from the first one
  • a barrier film 311 Embedded in a barrier film 311, and a second particle 710b located on the top surface 301a of the thin film encapsulant 301 is embedded by the adhesive layer 302.
  • the first barrier film 311 may have a thickness greater than the diameter of the first particle 710a
  • the adhesive layer 302 may have a thickness greater than the diameter of the second particle 710b, as shown in FIG. 7A.
  • the layer thicknesses of the first barrier film 311 and / or the adhesive layer 302 are selected such that possible particle contaminants on the surface of the OLED 600 and / or on the surface of the thin-film encapsulation 301 by means of the first
  • the layer thicknesses of the first barrier film 311 and / or the adhesive layer 302 may be selected to be greater than or approximately equal to the average diameter of the occurring ones
  • the layer thicknesses of the first barrier thin layer 311 and / or the adhesive layer 302 can be selected, for example, such that they are greater than the maximum of the diameters of all particle contaminants that occur.
  • barrier films eg. the second barrier film 312 and / or additional barrier films (if provided) of the thin film package 301 may be formed to have a film thickness sufficient in order to be able to embed particle contaminants at least partially (eg completely according to different embodiments) in the respective barrier thin film.
  • Particles e.g., particles 710a, 710b in the
  • Thin-layer encapsulation 301 (e.g., in the first
  • Barrier thin film 311 and the adhesive layer 302 (as shown), alternatively or additionally in other sub-layers of the thin film encapsulation 301 (if provided)), it is possible to prevent the particles from being pressed into the OLED stack 610 and the OLED 600, respectively To reduce or eliminate the burden on the OLED 600 by the particles and thus to prevent damage to the OLED.
  • FIG. 7A the illustration shown in FIG. 7A with only two particle contaminants 710a and 710b has purely exemplary character and that more than two particles can occur and in which
  • Thin-layer encapsulation 301 (e.g., the first
  • Barrier thin film 311) and / or the adhesive layer 302 can be embedded.
  • Section 655 of the encapsulation arrangement 600 ' can be seen, also particle contaminants, in a range of
  • Thin-layer encapsulation 301 (e.g., the first
  • Encapsulation assembly 655 is exemplified by a third particle 710c located at the top 601a of FIG.
  • Substrate 601 is located laterally adjacent to the OLED stack 610 and is embedded in the first barrier thin film 311, and a fourth particle 710d located on the upper side 301 a of the thin film encapsulation 301
  • FIG. 8 shows an encapsulation arrangement 800 'according to a further exemplary embodiment.
  • the encapsulation assembly 800 ' substantially differs from the encapsulation assembly 600' shown in FIG in that coupling-out structures 820a, 820b are provided, which serve to improve the light extraction of the light emitted by the OLED 600 (or the functional layers of the OLED stack 610). According to the shown
  • a first coupling-out structure 820a is formed on the top side 303a of the cover layer 303, and a second coupling-out structure 820b is formed on the bottom side 601b of the substrate 601a.
  • Various decoupling structures can be used in both directions.
  • the first outcoupling structure 820a and / or the second outcoupling structure 820b may each have one or more
  • Scattering particles e.g., metal oxide particles.
  • Decoupling be provided, for example, the first coupling-out 820a at the top 303a of the cover layer 303 (for example, in the case of a (pure) top emitter formed OLED 600) or the second coupling-out structure 820b at the bottom 601b of the substrate 601 (for example in the case of formed as (pure) bottom emitter OLED 600).
  • FIG. 9 shows an encapsulation arrangement 900 'according to a further exemplary embodiment.
  • the encapsulation arrangement 900 ' essentially differs from the encapsulation arrangement 600' shown in FIG. 6 in that a heat-conducting foil 920 is provided for
  • the heat-conducting foil 920 is on the
  • Cover layer 303 of the encapsulation structure 300 applied (eg glued on).
  • a plurality of heat conducting foils may be provided.
  • the heat conducting foil 920 may for example comprise or consist of a nontransparent material (for example in the case of an OLED 600 formed as a (pure) bottom emitter
  • Thermal conductive foil 920 (or the heat conducting foils) comprise or consist of a transparent material (for example in the case of an OLED 600 designed as a (pure) top emitter or as a combined top / bottom emitter).
  • FIG. 10 shows an encapsulation arrangement 1000 'according to a further exemplary embodiment.
  • the encapsulation arrangement 1000 ' differs from the encapsulation arrangement 600' shown in FIG.
  • Encapsulation structure 300 is formed as a foil (for example, as a heat conducting foil according to an embodiment). According to
  • the cover layer 303 may also be formed as a lacquer layer (for example as a polyacrylic protective lacquer). According to other embodiments, individual features (e.g., layers) of those shown in FIGS.
  • Encapsulation structure or method for encapsulating an optoelectronic component for example an organic optoelectronic component, such as, for example, an optoelectronic component.
  • an OLED organic optoelectronic component
  • Component according to various embodiments is particularly suitable, for example, for encapsulating and protecting flexible optoelectronic components, for example flexible organic optoelectronic components, such as e.g. flexible OLEDs, for example, as the use of commercial self-adhesive films as the top
  • Protective layer allows.
  • Packaging of an opto-electronic device for example, an organic optoelectronic device such as an OLED
  • the adhesive layer and / or the thin-layer encapsulation can also be used as cover
  • the encapsulation structure can also be used for transparent OLEDs (with the possibility of
  • the encapsulation structure offers various possibilities to specifically improve the heat extraction, e.g. by means of heat conducting foils (see for example Fig. 9);
  • another covering layer e.g., foil or lacquer layer
  • another covering layer e.g., foil or lacquer layer
  • the cap glass may press on the OLED layer stack (no cavity stability); In the non-cavity encapsulation structure described herein, according to various embodiments, forcing the cap glass onto the OLED layer stack is prevented, thereby preventing possible damage to the OLED by the cap glass.

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Abstract

L'invention concerne une structure d'encapsulation (300) pour un composant optoélectronique (400) comprenant : une encapsulation à couche mince (301) destinée à protéger le composant optoélectronique de contaminants chimiques; une couche adhésive (302) formée sur l'encapsulation à couche mince; et une couche de recouvrement (303) formée sur la couche adhésive et destinée à protéger l'encapsulation à couche mince et/ou le composant optoélectronique d'une détérioration mécanique.
EP12740316.0A 2011-06-30 2012-06-20 Structure d'encapsulation pour composant optoélectronique et procédé d'encapsulation d'un composant optoélectronique Ceased EP2727164A1 (fr)

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DE102011078404 2011-06-30
DE102011079160.4A DE102011079160B4 (de) 2011-07-14 2011-07-14 Verkapselungsstruktur für ein optoelektronisches bauelement und verfahren zum verkapseln eines optoelektronischen bauelements
PCT/EP2012/061892 WO2013000797A1 (fr) 2011-06-30 2012-06-20 Structure d'encapsulation pour composant optoélectronique et procédé d'encapsulation d'un composant optoélectronique

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CN103636023A (zh) 2014-03-12
US9172057B2 (en) 2015-10-27
JP5837191B2 (ja) 2015-12-24
US20140252406A1 (en) 2014-09-11
CN103636023B (zh) 2016-09-14
KR20140026647A (ko) 2014-03-05
JP2014523614A (ja) 2014-09-11

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