EP2715792A4 - Spin-filter für einen graphen-magnettunnelübergang und herstellungsverfahren dafür - Google Patents

Spin-filter für einen graphen-magnettunnelübergang und herstellungsverfahren dafür

Info

Publication number
EP2715792A4
EP2715792A4 EP12792897.6A EP12792897A EP2715792A4 EP 2715792 A4 EP2715792 A4 EP 2715792A4 EP 12792897 A EP12792897 A EP 12792897A EP 2715792 A4 EP2715792 A4 EP 2715792A4
Authority
EP
European Patent Office
Prior art keywords
making
methods
tunnel junction
magnetic tunnel
spin filters
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12792897.6A
Other languages
English (en)
French (fr)
Other versions
EP2715792A1 (de
Inventor
Jeffry Kelber
Mi Zhou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of North Texas
Original Assignee
University of North Texas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of North Texas filed Critical University of North Texas
Publication of EP2715792A1 publication Critical patent/EP2715792A1/de
Publication of EP2715792A4 publication Critical patent/EP2715792A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02516—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/04—Specific amount of layers or specific thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
EP12792897.6A 2011-05-27 2012-05-25 Spin-filter für einen graphen-magnettunnelübergang und herstellungsverfahren dafür Withdrawn EP2715792A4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161490650P 2011-05-27 2011-05-27
PCT/US2012/039487 WO2012166562A1 (en) 2011-05-27 2012-05-25 Graphene magnetic tunnel junction spin filters and methods of making

Publications (2)

Publication Number Publication Date
EP2715792A1 EP2715792A1 (de) 2014-04-09
EP2715792A4 true EP2715792A4 (de) 2015-03-25

Family

ID=47259775

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12792897.6A Withdrawn EP2715792A4 (de) 2011-05-27 2012-05-25 Spin-filter für einen graphen-magnettunnelübergang und herstellungsverfahren dafür

Country Status (5)

Country Link
US (1) US9564579B2 (de)
EP (1) EP2715792A4 (de)
KR (1) KR20140040169A (de)
CA (1) CA2834891A1 (de)
WO (1) WO2012166562A1 (de)

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GB201021112D0 (en) 2010-12-13 2011-01-26 Ntnu Technology Transfer As Nanowires
GB201200355D0 (en) * 2012-01-10 2012-02-22 Norwegian Univ Sci & Tech Ntnu Nanowires
GB201211038D0 (en) 2012-06-21 2012-08-01 Norwegian Univ Sci & Tech Ntnu Solar cells
JP5987613B2 (ja) * 2012-09-28 2016-09-07 ソニー株式会社 記憶素子、記憶装置、磁気ヘッド
GB201311101D0 (en) 2013-06-21 2013-08-07 Norwegian Univ Sci & Tech Ntnu Semiconducting Films
KR102222262B1 (ko) 2013-11-13 2021-03-04 삼성전자주식회사 자기저항 구조체 및 그 제조 방법, 이를 구비하는 전자소자
JP6959915B2 (ja) 2015-07-13 2021-11-05 クラヨナノ エーエス グラファイト基板上に成長させたナノワイヤ又はナノピラミッド
ES2901111T3 (es) 2015-07-13 2022-03-21 Crayonano As Diodos emisores de luz y fotodetectores en forma de nanohilos/nanopirámides
CA2993884A1 (en) 2015-07-31 2017-02-09 Crayonano As Process for growing nanowires or nanopyramids on graphitic substrates
US10261139B2 (en) 2016-02-19 2019-04-16 The United States Of America, As Represented By The Secretary Of The Navy Method of making a magnetic field sensor
EP3270362B1 (de) 2017-02-07 2019-01-02 Siemens Schweiz AG Brandmelder mit einer messkammer und mit einem schaltungsträger zur gemeinsamen anordnung eines brandsensors der messkammer sowie zumindest eines weiteren sensors zur erfassung einer messgrösse in der umgebung ausserhalb des brandmelders
GB201705755D0 (en) 2017-04-10 2017-05-24 Norwegian Univ Of Science And Tech (Ntnu) Nanostructure
CN107999280B (zh) * 2017-12-01 2022-05-06 青岛中科鹏润节能技术有限公司 一种包含石墨烯的电吸附精制滤芯及其制造方法
KR102637671B1 (ko) 2018-08-11 2024-02-15 어플라이드 머티어리얼스, 인코포레이티드 그래핀 확산 장벽
CN111647942B (zh) * 2020-05-26 2022-10-11 中国人民解放军国防科技大学 一种铁磁/石墨烯/铁磁异质外延薄膜及其制备方法

Citations (1)

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US20090321860A1 (en) * 2008-06-30 2009-12-31 Qimonda Ag Integrated circuit having a magnetic tunnel junction device and method

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JP2002025245A (ja) * 2000-06-30 2002-01-25 Nec Corp 不揮発性半導体記憶装置及び情報記録方法
US6791806B1 (en) * 2001-09-28 2004-09-14 Seagate Technology Llc Tunneling barrier material for a magnetic recording head
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See also references of WO2012166562A1 *

Also Published As

Publication number Publication date
US9564579B2 (en) 2017-02-07
WO2012166562A1 (en) 2012-12-06
US20140151826A1 (en) 2014-06-05
CA2834891A1 (en) 2012-12-06
EP2715792A1 (de) 2014-04-09
KR20140040169A (ko) 2014-04-02

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