EP2702608A1 - Substrate treatment installation - Google Patents

Substrate treatment installation

Info

Publication number
EP2702608A1
EP2702608A1 EP12718967.8A EP12718967A EP2702608A1 EP 2702608 A1 EP2702608 A1 EP 2702608A1 EP 12718967 A EP12718967 A EP 12718967A EP 2702608 A1 EP2702608 A1 EP 2702608A1
Authority
EP
European Patent Office
Prior art keywords
substrate treatment
lamp
housing
treatment plant
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP12718967.8A
Other languages
German (de)
French (fr)
Inventor
Harald Gross
Erwin Zschieschang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Von Ardenne Anlagentechnik GmbH
Original Assignee
Von Ardenne Anlagentechnik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Von Ardenne Anlagentechnik GmbH filed Critical Von Ardenne Anlagentechnik GmbH
Publication of EP2702608A1 publication Critical patent/EP2702608A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J7/00—Details not provided for in the preceding groups and common to two or more basic types of discharge tubes or lamps
    • H01J7/24—Cooling arrangements; Heating arrangements; Means for circulating gas or vapour within the discharge space
    • H01J7/26—Cooling arrangements; Heating arrangements; Means for circulating gas or vapour within the discharge space by flow of fluid through passages associated with tube or lamp

Definitions

  • Substrate Treatment Plant The invention relates to a substrate treatment plant.
  • Substrates ie for example by lead with an area of about the 2 or more, this can be achieved in two ways: either a single lamp is moved (or a small array of lamps, which cover only a part of the substrate) relative to the substrate, so that when juxtaposing a plurality of exposure fields, finally, the entire substrate can be exposed or annealed. Alternatively, an array of lamps extending over the entire substrate may be ignited once.
  • a single lamp is moved (or a small array of lamps, which cover only a part of the substrate) relative to the substrate, so that when juxtaposing a plurality of exposure fields, finally, the entire substrate can be exposed or annealed.
  • an array of lamps extending over the entire substrate may be ignited once.
  • examples such as photoresists to be exposed on a substrate - in which a juxtaposition of several
  • the prior art is an air-cooled lamp array which covers all or part of the substrate surface.
  • lamps are placed outside the vacuum chamber and the substrate is through a window in the wall of the
  • the viewing window would have thick accordingly - ie many centimeters - be designed.
  • this custom glass typically quartz glass due to the high UV transparency
  • due to the large thickness of the glass to achieve the required strength a significant portion of the light from the lamp will be in the glass of the viewing window
  • Turbine blades For lasers used for drilling e.g. Turbine blades are used, serves a 200 mm long
  • Gas discharge lamp as a light source.
  • the lamp must be turned off due to the high lightning rate, e.g. 500 pulses per second, ie a relatively high average electrical power of e.g. 8 kW, water cooled.
  • the cooling is generally accomplished by a so-called flow tube, in which the lamp is embedded.
  • the flow tube is one
  • Quartz glass tube through which deionized cooling water flows, thus cooling the lamp.
  • Flow Tubes allow a turbulence-free flow of water along the lamp.
  • the lamps are surrounded individually or in groups of sections transparent housings to the ambient conditions of the
  • Isolate treatment chamber and, if appropriate, to cool with suitable gaseous or liquid media.
  • Heating device disclosed which can also be used for the thermal treatment of surfaces of semiconductors.
  • the heating unit itself here consists of a bent quartz glass tube, through which a carbon wire which is when it comes from electric current
  • the quartz tube is on one
  • Silicon carbide covered protective cover Silicon carbide covered protective cover.
  • An object of the invention is known
  • a substrate treatment system which comprises a system chamber and a light source for exposing substrates, the light source being arranged inside the substrate treatment system and at least one lamp arranged in an at least partially transparent, a vacuum-tight cavity for receiving a lamp housing and at least one lamp arranged in spatial proximity to the at least one lamp
  • Reflector element comprising an electrical connection. Exposing the substrates in the proposed
  • Substrate treatment plant takes place in such a manner and with such lamps, which are suitable due to their energy output, at least near the surface of the substrate and / or a layer located thereon in terms of their properties similar to a thermal
  • Substrate treatment plant due to their arrangement within the plant chamber are arranged much closer to the substrate, whereby less energy is used to
  • At least one reflector element in spatial proximity to the at least one lamp at least one reflector element is arranged with an electrical connection, which it
  • the housing of the light source comprises at least one tube made of a light-transmitting material.
  • Tubes are easy and inexpensive to produce, have due to their geometry, even at relatively low wall thicknesses on a relatively high strength and are ideally suited to arrange a rod-shaped lamp therein. If several tubes are arranged parallel to each other in a plane, so can simple and
  • a surface luminous light source can be provided within the substrate treatment system, in which a plurality of rod-shaped lamps can be arranged independently of each other and at the same time the exposure over a larger area, level, for example
  • plate-like substrates such as flat glass panes and
  • the housing at least comprises two plates arranged parallel to each other and at least two plate strips connecting the plates, wherein at least one plate consists of a translucent material.
  • two plate strips are sufficient to connect the two parallel plates to one another to form a housing, for example when the then still open two ends of this composite open outside the installation chamber, as will be described below in connection with a further embodiment.
  • the housing may pass through at least one wall of the housing
  • Plant chamber extends through and on the outside of the plant chamber has at least one opening through which the cavity of the housing is accessible from outside the plant chamber. This makes it possible on the one hand, individual lamps, if necessary, during operation of the
  • Vacuum process runs, and in this way one
  • the at least one opening is formed as a coolant connection, so that a coolant can be passed through the housing in order to cool the lamp or lamps.
  • the coolant may for example be a gas such as air or nitrogen, but also a coolant such as deionized water or the like be .
  • the light source comprises at least two rod-shaped arranged in a plane
  • Lamps and the reflector element comprises at least one arranged in a plane parallel thereto electrically conductive plate. This allows two or more lamps below
  • Reflector element are ignited, whereby the structure of the substrate treatment system can be kept simple.
  • the reflector element may according to another embodiment be part of the housing, i. the reflector element may for example be formed by one of the plates or one or more plate strips of the housing,
  • the reflector element is an electrically conductive layer, which on a
  • Component of the housing for example, a translucent, electrically non-conductive plate or a translucent, electrically non-conductive
  • Plate strip is attached. It is also possible to mount the electrically conductive layer on a portion of the surface of a transparent, electrically non-conductive tube. For example, if a tube of translucent material such as quartz glass or the like is applied to long flash lamps, e.g. 1700 mm, scaled and passed through a vacuum chamber, glass wall thicknesses of e.g. 1.5 mm to withstand the vacuum pressure. At a relatively low level
  • Such pipes can be inexpensive
  • the lamp can be cooled by means of a closed nitrogen cycle through the housing and a heat exchanger without the formation of ozone. It is state of the art in processes in which no UV component is required to suppress the ozone formation at the expense of the luminous efficacy by cerium doping of the lamp body. This variant is of course also in the
  • Fig. 1 is a belonging to a substrate treatment plant system chamber in perspective view with a
  • Fig. 2 is a cross-sectional view of a
  • Fig. 3 is a cross-sectional view of a
  • FIG. 4 is a cross-sectional view of a Substrate treatment plant according to a fourth
  • Fig. 5 is a cross-sectional view of a
  • FIG. 6 shows a lamp arrangement according to a sixth
  • Fig. 7 shows a lamp assembly according to a seventh
  • FIG. 1 shows a partial view of a plant chamber 1, which is part of a substrate treatment plant for vacuum treatment of plate-shaped substrates.
  • the plant chamber 1 has side walls 11, a bottom 12 and flanges 13, to which a lid, not shown here, can be placed, so that the plant chamber 1 can be closed by the lid.
  • a transport device 2 for the substrates 3 is arranged in the plant chamber 1.
  • the transport device 2 is formed by an arrangement of transport rollers 22, which are arranged in a horizontal plane, which are rotatably mounted and drivable in two storage banks 21 and to which the substrates to be treated are placed and moved in a transport direction 25 through the substrate treatment plant.
  • the transport device 2 is arranged in a plane lamp array, which is in the interior of the installation chamber 1 under the operation of the
  • Substrate treatment plant the plant chamber 1
  • occlusive connected to the upper flange 13, not shown cover is arranged.
  • These are transverse to the transport direction 25 of the substrates in a horizontal Level, which is parallel to and above the transport plane of the substrates, a plurality of quartz glass tubes 41 (flow tubes) guided through the plant chamber 1 and stored for example in sealing rings that they penetrate the side walls 11 of the plant chamber 1.
  • quartz glass tubes 41 flow tubes guided through the plant chamber 1 and stored for example in sealing rings that they penetrate the side walls 11 of the plant chamber 1.
  • the tubes 41 can then be used to guide lamps, which cause the optical treatment of the substrates, which are moved on the transport device 2 under the lamps through the substrate treatment plant. This makes it possible both to increase the lamps in atmospheric pressure
  • the tubes 41 have a circular cross-section.
  • the tubes 41 are particularly simple and therefore inexpensive to produce, on the other hand particularly pressure resistant.
  • the wall thickness of the tubes 41 does not scale with the number of lamps and only slightly with their length due to the required mechanical
  • Fig. 2 shows a cross section through a
  • This reflector element 6 serves to ignite the lamps 5.
  • Fig. 3 shows an embodiment in which straight tubes 41 are mounted in indentations 15 of the lid 14, so that the tubes 41 and the lamps 5 disposed therein are in vacuum within the plant chamber 1, wherein the ends of the tubes 41 into the atmosphere except for
  • Plant chamber 1 open the vacuum chamber and can be supplied with voltage there.
  • the indentations 15 of the lid 14 thus form walls of the plant chamber, through which the tubes extend.
  • the indentations 15 can be detachably connected to the cover 14.
  • the outside of the plant chamber 1 opening tubes 41, each forming a housing 4 for a lamp 5, can be used by their outer openings 44 for introducing and discharging coolant.
  • coolant connections at the openings 44 coolant connections
  • Fig. 4 shows an embodiment in which straight tubes 41 are mounted in the lid 14 of the system chamber 1 so that they penetrate the side walls 11 and the tubes 41 and the lamps 5 disposed therein are in vacuum within the system chamber 1, the ends the pipes 41 open into the atmosphere outside the plant chamber 1 and can be supplied there with voltage.
  • Fig. 6 shows a planar arrangement of lamps 5 according to an embodiment in which the tubes 41 - unlike the embodiments described above - are arranged in tubes 41 with a rectangular cross-section. This can a small wall thickness of the tubes 41 at the same time high packing density of the lamps 5 can be achieved.
  • Substrates 3 facing away from (horizontal) surfaces of the tubes 41 and located between the lamps 5 (vertical) surfaces of the tubes 41 may also be with an electrically conductive material such as aluminum or the like
  • the coated surfaces if they are applied in accordance with an electric potential, represent a reflector element 6, which can serve to ignite the lamps 5, as described above. Incidentally, the same would be the case in the cross section
  • Substrates 3 facing away from the lateral surface of the tubes 41 should be coated and the substrates. 3
  • FIG. 7 further shows alternatively a lamp arrangement in a housing 4, which, in contrast to the previously presented tubes 41, not only a lamp 5, but a whole
  • This housing 4 can accommodate planar arrangement of lamps 5.
  • This housing 4 is formed of two plates 42, at least one of which is made of a translucent material, such as quartz glass, and webs in the form of plate strips 43 which are arranged between the two plates 42 and connected to these, the strength of the housing 4 increase.
  • the other plate 42 can be
  • Quartz glass or the like but also made of other materials, such as electrically conductive material such as aluminum or the like, or with electrically conductive material such as aluminum or the like
  • the other plate may simultaneously constitute a capacitor element which can serve to ignite the lamps 5, as described above.
  • Housing 4 at the same time act as reflectors to better exploit the light of the lamps 5.

Abstract

A problem addressed by the invention, namely that of improving known substrate treatment installations such that substrates can be treated by light in said installations, without the need for cost-intensive inspection windows having a large thickness, is solved by means of a substrate treatment installation comprising an installation chamber and a light source for the exposure of substrates to light, the light source being arranged in the interior of the substrate treatment installation and comprising at least one lamp arranged in a housing, which is permeable to light at least in sections and has a vacuum-tight cavity for accommodating a lamp, and also comprising at least one reflector element arranged in spatial proximity to the at least one lamp and having an electrical connection.

Description

Substratbehandlungsanlage Die Erfindung betrifft eine Substratbehandlungsanlage.  Substrate Treatment Plant The invention relates to a substrate treatment plant.
Möchte man Belichtungs- bzw. Temperprozessen mit Hilfe von gepulsten Gasentladungslampen (Blitzlampen) bei großen Would you like exposure or annealing processes with the help of pulsed gas discharge lamps (flash lamps) at large
Substraten, d.h. z.B. mit einer Fläche von etwa Im2 und mehr durchführen, so kann dies auf zwei Arten erreicht werden: Entweder wird eine einzelne Lampe (oder ein kleines Array von Lampen, welche nur ein Teil des Substrats überdecken) , relativ zum Substrat bewegt, so dass bei Aneinanderheften mehrerer Belichtungsfelder schließlich das ganze Substrat belichtet bzw. getempert werden kann. Alternativ dazu kann ein Array von Lampen, welches sich über das ganze Substrat erstreckt, einmalig gezündet werden. Es gibt eine Vielzahl von Beispielen - wie zu belichtende Fotolacke auf einem Substrat - bei denen ein Aneinanderheften mehrerer Substrates, ie for example by lead with an area of about the 2 or more, this can be achieved in two ways: either a single lamp is moved (or a small array of lamps, which cover only a part of the substrate) relative to the substrate, so that when juxtaposing a plurality of exposure fields, finally, the entire substrate can be exposed or annealed. Alternatively, an array of lamps extending over the entire substrate may be ignited once. There are a variety of examples - such as photoresists to be exposed on a substrate - in which a juxtaposition of several
Belichtungsfelder aufgrund ihrer erforderlichen Überlappung zwangsweise zu einer nachteiligen Doppelbelichtung führt. In diesen Fällen ist nur ein Array von Lampen, die das gesamte Substrat überdecken, einsetzbar. Exposure fields due to their required overlap forcibly leads to a disadvantageous double exposure. In these cases, only an array of lamps covering the entire substrate can be used.
Stand der Technik ist ein luftgekühltes Lampenarray, welches die ganze oder Teile der Substratoberfläche überdeckt. Bei Prozessen, die nur im Vakuum ablaufen können oder sollen, werden Lampen außerhalb der Vakuumkammer angeordnet und das Substrat wird durch ein Sichtfenster in der Wand der The prior art is an air-cooled lamp array which covers all or part of the substrate surface. In processes that can or should run only in a vacuum, lamps are placed outside the vacuum chamber and the substrate is through a window in the wall of the
Vakuumkammer, durch das die Lampen in die Vakuumkammer hineinstrahlen, belichtet bzw. getempert. Daher lastet aufgrund der Druckdifferenz zwischen dem Atmosphärendruck außerhalb der Anlage und dem innerhalb der Anlage Vacuum chamber through which the lamps radiate into the vacuum chamber, exposed or annealed. Therefore, due to the pressure difference between the atmospheric pressure outside the plant and within the plant
herrschenden Vakuum auf das Sichtfenster eine Kraft von mindestens 105 Newton pro Quadratmeter Substratfläche. prevailing vacuum on the viewing window a force of at least 10 5 Newton per square meter of substrate area.
Folglich müsste das Sichtfenster entsprechend dick - also viele Zentimeter - ausgelegt werden. Abgesehen von den hohen Herstellungskosten dieses speziell angefertigten Glases (typischerweise Quarzglas aufgrund der hohen Transparenz im UV-Bereich) wird aufgrund der großen Dicke des Glases, um die benötigte Festigkeit zu erzielen, ein erheblicher Teil des Lichts von der Lampe im Glas des Sichtfensters Consequently, the viewing window would have thick accordingly - ie many centimeters - be designed. Apart from the high manufacturing cost of this custom glass (typically quartz glass due to the high UV transparency), due to the large thickness of the glass to achieve the required strength, a significant portion of the light from the lamp will be in the glass of the viewing window
absorbiert . absorbed.
Bei Lasern, welche zum Bohren von z.B. Turbinenschaufeln eingesetzt werden, dient eine 200 mm lange For lasers used for drilling e.g. Turbine blades are used, serves a 200 mm long
Gasentladungslampe als Lichtquelle. Die Lampe muss aufgrund der hohen Blitzfolge, z.B. 500 Pulse pro Sekunde, also einer relativ hohen mittleren elektrischen Leistung von z.B. 8 kW, wassergekühlt werden. Die Kühlung wird im Allgemeinen durch eine sogenannte Flow Tube bewerkstelligt, in welche die Lampe eingebettet ist. Die Flow Tube ist eine Gas discharge lamp as a light source. The lamp must be turned off due to the high lightning rate, e.g. 500 pulses per second, ie a relatively high average electrical power of e.g. 8 kW, water cooled. The cooling is generally accomplished by a so-called flow tube, in which the lamp is embedded. The flow tube is one
Quarzglasröhre, durch welche deionisiertes Kühlwasser fließt und somit die Lampe kühlt. Flow Tubes ermöglichen einen turbulenzfreien Wasserfluss entlang der Lampe.  Quartz glass tube through which deionized cooling water flows, thus cooling the lamp. Flow Tubes allow a turbulence-free flow of water along the lamp.
In US 2002/0148824 AI wird ein System zum thermischen In US 2002/0148824 AI is a system for thermal
Behandeln von Oberflächen von Halbleitern vorgeschlagen, wobei diese durch von Heizlampen erzeugte thermische Proposed treatment of surfaces of semiconductors, these by heat lamps generated by thermal
Strahlung erwärmt werden. Die Lampen sind dabei einzeln oder in Gruppen von abschnittsweise transparenten Gehäusen umgeben, um sie von den Umgebungsbedingungen der Radiation is heated. The lamps are surrounded individually or in groups of sections transparent housings to the ambient conditions of the
Behandlungskammer zu isolieren und gegeben falls, mit geeigneten gasförmigen oder flüssigen Medien zu kühlen. Isolate treatment chamber and, if appropriate, to cool with suitable gaseous or liquid media.
Zusätzlich können zwischen den Lampen aufweisenden Gehäusen und der thermisch zu behandelnden Oberfläche noch dünne Quart zglasscheiben angeordnet sein. In ähnlicher Weise wird in US 2007/0095289 AI eine In addition, between the lamps having housings and the surface to be thermally treated still thin Quart zglasscheiben be arranged. Similarly, in US 2007/0095289 AI a
Heizeinrichtung offenbart, welche ebenfalls zur thermischen Behandlung von Oberflächen von Halbleitern eingesetzt werden kann. Die Heizeinheit selbst besteht hierbei aus einer gebogenen Quarzglasröhre, durch welche ein Kohlenstoffdraht geführt ist, welcher, wenn er von elektrischem Strom Heating device disclosed, which can also be used for the thermal treatment of surfaces of semiconductors. The heating unit itself here consists of a bent quartz glass tube, through which a carbon wire which is when it comes from electric current
durchflössen wird, Wärme erzeugt und an die zu behandelnde Oberfläche abgibt. Die Quarzröhre ist dabei auf einer flows through, generates heat and gives off to the surface to be treated. The quartz tube is on one
Reflektorplatte fest moniert und wird von einer aus Reflector plate firmly complains and gets out of one
Siliziumkarbid bestehenden Schutzhaube abgedeckt. Silicon carbide covered protective cover.
Eine Aufgabe der Erfindung besteht darin, bekannte An object of the invention is known
Substratbehandlungsanlagen dahingehend zu verbessern, dass darin Substrate durch Licht behandelt werden können, ohne dass kostenintensive Sichtfenster mit hohem Gewicht benötigt werden. To improve substrate treatment facilities in that substrates can be treated by light, without costly viewing windows are required with high weight.
Diese Aufgabe wird gelöst durch eine This task is solved by a
Substratbehandlungsanlage mit den Merkmalen des unabhängigen Anspruchs 1. Vorteilhafte Ausgestaltungen und  Substrate treatment plant with the features of independent claim 1. Advantageous embodiments and
Weiterbildungen sind in den abhängigen Ansprüchen Further developments are in the dependent claims
beschrieben. described.
Vorgeschlagen wird daher eine Substratbehandlungsanlage, die eine Anlagenkammer und eine Lichtquelle zur Belichtung von Substraten umfasst, wobei die Lichtquelle im Innern der Substratbehandlungsanlage angeordnet ist und mindestens eine in einem zumindest abschnittsweise lichtdurchlässigen, einen vakuumdichten Hohlraum zur Aufnahme einer Lampe aufweisenden Gehäuse angeordnete Lampe sowie mindestens ein in räumlicher Nähe zu der mindestens einen Lampe angeordnetes Therefore, a substrate treatment system is proposed which comprises a system chamber and a light source for exposing substrates, the light source being arranged inside the substrate treatment system and at least one lamp arranged in an at least partially transparent, a vacuum-tight cavity for receiving a lamp housing and at least one lamp arranged in spatial proximity to the at least one lamp
Reflektorelement mit einem elektrischen Anschluss umfasst. Das Belichten der Substrate in der vorgeschlagenen Reflector element comprising an electrical connection. Exposing the substrates in the proposed
Substratbehandlungsanlage erfolgt in einer solchen Weise und mit solchen Lampen, die aufgrund ihres Energieausstoßes geeignet sind, zumindest oberflächennah das Substrat und/oder eine darauf befindliche Schicht hinsichtlich ihrer Eigenschaften ähnlich wie bei einem thermischen  Substrate treatment plant takes place in such a manner and with such lamps, which are suitable due to their energy output, at least near the surface of the substrate and / or a layer located thereon in terms of their properties similar to a thermal
Behandlungsprozess zu verändern. Change the treatment process.
Durch die Anordnung der Lampe oder Lampen in einem vakuumdichten Gehäuse können diese innerhalb der Anlagenkammer angeordnet werden, so dass auf speziell angefertigte Sichtfenster großer Dicke für außerhalb der Anlagenkammer angeordnete Lampen verzichtet werden kann, . Dieser Vorteil macht sich insbesondere mit zunehmenden By arranging the lamp or lamps in one vacuum-tight housing, these can be arranged within the plant chamber, so that can be dispensed with custom-made viewing window of large thickness for arranged outside the plant chamber lamps,. This advantage is increasing in particular
Substratgrößen außerordentlich positiv bemerkbar. Darüber hinaus kann die Lichtquelle bei der vorgeschlagenen Substrate sizes extremely positively noticeable. In addition, the light source in the proposed
Substratbehandlungsanlage aufgrund ihrer Anordnung innerhalb der Anlagenkammer deutlich dichter am Substrat angeordnet werden, wodurch weniger Energie verbraucht wird, um Substrate treatment plant due to their arrangement within the plant chamber are arranged much closer to the substrate, whereby less energy is used to
denselben Effekt wie bei außerhalb der Anlagenkammer the same effect as outside the plant chamber
liegenden Lichtquellen zu erzielen. to achieve lying light sources.
Weiter ist vorgesehen, dass in räumlicher Nähe zu der mindestens einen Lampe mindestens ein Reflektorelement mit einem elektrischen Anschluss angeordnet ist, der es It is further provided that in spatial proximity to the at least one lamp at least one reflector element is arranged with an electrical connection, which it
ermöglicht, das Reflektorelement auf ein wählbares allows the reflector element to be selected
elektrisches Potential zu legen. Damit ist es möglich, auch sehr lange Lampen einfach und sicher zu zünden. to lay electrical potential. This makes it possible to ignite even very long lamps simply and safely.
In einer Ausgestaltung ist vorgesehen, dass das Gehäuse der Lichtquelle mindestens ein Rohr aus einem lichtdurchlässigen Material umfasst. Rohre sind leicht und kostengünstig herstellbar, weisen aufgrund ihrer Geometrie auch bei relativ geringen Wanddicken eine relativ hohe Festigkeit auf und sind ideal geeignet, um darin eine stabförmige Lampe anzuordnen. Werden mehrere Rohre parallel zueinander in einer Ebene angeordnet, so kann auf einfache und In one embodiment, it is provided that the housing of the light source comprises at least one tube made of a light-transmitting material. Tubes are easy and inexpensive to produce, have due to their geometry, even at relatively low wall thicknesses on a relatively high strength and are ideally suited to arrange a rod-shaped lamp therein. If several tubes are arranged parallel to each other in a plane, so can simple and
kostengünstige Weise eine flächenhaft leuchtende Lichtquelle innerhalb der Substratbehandlungsanlage bereitgestellt werden, bei der mehrere stabförmige Lampen unabhängig voneinander angeordnet sein können und gleichzeitig die Belichtung großflächiger, ebener, beispielsweise Inexpensive manner a surface luminous light source can be provided within the substrate treatment system, in which a plurality of rod-shaped lamps can be arranged independently of each other and at the same time the exposure over a larger area, level, for example
plattenförmiger Substrate wie Flachglasscheiben und plate-like substrates such as flat glass panes and
dergleichen, möglich ist. the like, is possible.
Alternativ kann vorgesehen sein, dass das Gehäuse mindestens zwei parallel zueinander angeordnete Platten und mindestens zwei die Platten verbindende Plattenstreifen umfasst, wobei mindestens eine Platte aus einem lichtdurchlässigen Material besteht. Grundsätzlich reichen zwei Plattenstreifen aus, um die beiden parallelen Platten miteinander zu einem Gehäuse zu verbinden, beispielsweise wenn die dann noch offenen beiden Enden dieses Verbundes außerhalb der Anlagenkammer münden, wie nachfolgend noch im Zusammenhang mit einer weiteren Ausgestaltung beschrieben wird. Alternatively it can be provided that the housing at least comprises two plates arranged parallel to each other and at least two plate strips connecting the plates, wherein at least one plate consists of a translucent material. In principle, two plate strips are sufficient to connect the two parallel plates to one another to form a housing, for example when the then still open two ends of this composite open outside the installation chamber, as will be described below in connection with a further embodiment.
Es kann jedoch auch sinnvoll sein, weitere Plattenstreifen zwischen die beiden Platten einzufügen, um die Festigkeit des Gehäuses weiter zu erhöhen, wie nachfolgend noch anhand eines Ausführungsbeispiels beschrieben wird. Dadurch werden zwischen den beiden parallelen Platten mehrere gegeneinander abgegrenzte Kanäle geschaffen, die beispielsweise jeweils der Aufnahme einer stabförmigen Lampe dienen können. However, it may also be useful to insert more plate strips between the two plates in order to further increase the strength of the housing, as will be described below with reference to an embodiment. As a result, a plurality of mutually delimited channels are created between the two parallel plates, which can serve, for example, each receiving a rod-shaped lamp.
Wie oben bereits angedeutet kann es vorteilhaft sein, dass das Gehäuse sich durch mindestens eine Wand der As already indicated above, it may be advantageous for the housing to pass through at least one wall of the housing
Anlagenkammer hindurch erstreckt und an der Außenseite der Anlagenkammer mindestens eine Öffnung aufweist, durch die der Hohlraum des Gehäuses von außerhalb der Anlagenkammer zugänglich ist. Dadurch wird es einerseits möglich, einzelne Lampen bedarfsweise während des Betriebs der Plant chamber extends through and on the outside of the plant chamber has at least one opening through which the cavity of the housing is accessible from outside the plant chamber. This makes it possible on the one hand, individual lamps, if necessary, during operation of the
Substratbehandlungsanlage auszuwechseln, ohne die Substitute substrate treatment plant, without the
Anlagenkammer belüften zu müssen, wenn darin ein To ventilate the system chamber, if in it
Vakuumprozess abläuft, und auf diese Weise einen Vacuum process runs, and in this way one
kostenintensiven Stillstand der Substratbehandlungsanlage zu vermeiden . avoid costly downtime of the substrate treatment plant.
Andererseits kann vorgesehen sein, dass die mindestens eine Öffnung als Kühlmittelanschluss ausgebildet ist, so dass ein Kühlmittel durch das Gehäuse geleitet werden kann, um die Lampe oder Lampen zu kühlen. Dabei kann das Kühlmittel beispielsweise ein Gas wie Luft oder Stickstoff, aber auch ein Kühlmittel wie deionisiertes Wasser oder dergleichen sein . On the other hand, it can be provided that the at least one opening is formed as a coolant connection, so that a coolant can be passed through the housing in order to cool the lamp or lamps. In this case, the coolant may for example be a gas such as air or nitrogen, but also a coolant such as deionized water or the like be .
Gemäß einer weiteren Ausgestaltung umfasst die Lichtquelle mindestens zwei in einer Ebene angeordnete stabförmige According to a further embodiment, the light source comprises at least two rod-shaped arranged in a plane
Lampen und das Reflektorelement umfasst mindestens eine in einer dazu parallelen Ebene angeordnete elektrisch leitende Platte. Dadurch können zwei oder mehr Lampen unter Lamps and the reflector element comprises at least one arranged in a plane parallel thereto electrically conductive plate. This allows two or more lamps below
Verwendung eines einzelnen, flächenhaft ausgebildeten Use of a single, areal trained
Reflektorelements gezündet werden, wodurch der Aufbau der Substratbehandlungsanlage einfach gehalten werden kann. Das Reflektorelement kann gemäß einer weiteren Ausgestaltung Bestandteil des Gehäuses sein, d.h. das Reflektorelement kann beispielsweise durch eine der Platten oder einen oder mehrere Plattenstreifen des Gehäuses gebildet sein, Reflector element are ignited, whereby the structure of the substrate treatment system can be kept simple. The reflector element may according to another embodiment be part of the housing, i. the reflector element may for example be formed by one of the plates or one or more plate strips of the housing,
beispielsweise indem diese aus einem elektrisch leitfähigen Werkstoff gebildet sind. for example, by being formed from an electrically conductive material.
Alternativ kann vorgesehen sein, dass das Reflektorelement eine elektrisch leitfähige Schicht ist, die auf einem Alternatively it can be provided that the reflector element is an electrically conductive layer, which on a
Bestandteil des Gehäuses, beispielsweise einer an sich lichtdurchlässigen, elektrisch nicht leitfähigen Platte oder einem lichtdurchlässigen, elektrisch nicht leitfähigen Component of the housing, for example, a translucent, electrically non-conductive plate or a translucent, electrically non-conductive
Plattenstreifen angebracht ist. Ebenso ist es möglich, die elektrisch leitfähige Schicht auf einem Teilbereich der Oberfläche eines lichtdurchlässigen, elektrisch nicht leitfähigen Rohres anzubringen. Wird beispielsweise ein Rohr aus lichtdurchlässigem Material wie Quarzglas oder dergleichen auf lange Blitzlampen, z.B. 1700 mm, skaliert und durch eine Vakuumkammer geführt, so reichen auch Glaswandstärken von z.B. 1,5 mm aus, um dem Vakuumdruck zu widerstehen. Bei einer relativ geringen  Plate strip is attached. It is also possible to mount the electrically conductive layer on a portion of the surface of a transparent, electrically non-conductive tube. For example, if a tube of translucent material such as quartz glass or the like is applied to long flash lamps, e.g. 1700 mm, scaled and passed through a vacuum chamber, glass wall thicknesses of e.g. 1.5 mm to withstand the vacuum pressure. At a relatively low level
Blitzfolge in einem Lampen-Array von z.B. einem Puls pro zehn Sekunden, d.h. alle zehn Sekunden wird ein Substrat getempert, ist eine Gaskühlung völlig ausreichend. Es kann also auf eine Kühlung der Lampe beispielsweise durch Wasser verzichtet werden, welches den zwar geringen, aber nicht unerheblichen Infrarotanteil des Emissionsspektrums der Lampe absorbiert. Solche Rohre können kostengünstig Flash sequence in a lamp array of, for example, one pulse per ten seconds, ie every ten seconds, a substrate is annealed, a gas cooling is quite sufficient. It can therefore be a cooling of the lamp, for example by water be omitted, which absorbs the small but not insignificant infrared portion of the emission spectrum of the lamp. Such pipes can be inexpensive
hergestellt werden (z.B. 50 € / 2 m). Außerdem ist ein einfacher (wasserfreier) Lampenwechsel ohne Belüftung der Vakuumkammer möglich. Bei höherem Energieeinsatz ermöglicht die vorgeschlagene Lösung jedoch auch eine aktive Kühlung der Lampen mit einem flüssigen Kühlmittel, wie oben bereits beschrieben . produced (e.g., 50 € / 2 m). In addition, a simple (anhydrous) lamp replacement without ventilation of the vacuum chamber is possible. At higher energy input, however, the proposed solution also allows active cooling of the lamps with a liquid coolant, as already described above.
Falls der UV-Anteil des Emissionsspektrums ausgenützt werden soll, kann über einen geschlossenen Stickstoffkreislauf durch das Gehäuse und einen Wärmetauscher die Lampe gekühlt werden ohne dass es zu einer Ozonbildung kommt. Stand der Technik ist es, bei Prozessen, bei denen kein UV-Anteil erforderlich ist, durch Cerium-Dotierung des Lampenkörpers die Ozonbildung zu Lasten der Lichtausbeute zu unterbinden. Auch diese Variante ist selbstverständlich bei der If the UV component of the emission spectrum is to be utilized, the lamp can be cooled by means of a closed nitrogen cycle through the housing and a heat exchanger without the formation of ozone. It is state of the art in processes in which no UV component is required to suppress the ozone formation at the expense of the luminous efficacy by cerium doping of the lamp body. This variant is of course also in the
vorgeschlagenen Substratbehandlungsanlage vorteilhaft anwendbar . proposed substrate treatment system advantageously applicable.
Nachfolgend wird die vorgeschlagene The following is the proposed
Substratbehandlungsanlage anhand von Ausführungsbeispielen und zugehörigen Zeichnungen näher erläutert. Dabei zeigen  Substrate treatment system explained in more detail with reference to embodiments and accompanying drawings. Show
Fig. 1 eine zu einer Substratbehandlungsanlage gehörende Anlagenkammer in perspektivischer Ansicht mit einer Fig. 1 is a belonging to a substrate treatment plant system chamber in perspective view with a
Lampenanordnung gemäß einem ersten Ausführungsbeispiel, Lamp assembly according to a first embodiment,
Fig. 2 eine Querschnittsansicht einer Fig. 2 is a cross-sectional view of a
Substratbehandlungsanlage gemäß einem zweiten Substrate treatment plant according to a second
Ausführungsbeispiel , Embodiment,
Fig. 3 eine Querschnittsansicht einer Fig. 3 is a cross-sectional view of a
Substratbehandlungsanlage gemäß einem ersten dritten Substrate treatment plant according to a first third
Ausführungsbeispiel , Embodiment,
Fig. 4 eine Querschnittsansicht einer Substratbehandlungsanlage gemäß einem vierten 4 is a cross-sectional view of a Substrate treatment plant according to a fourth
Ausführungsbeispiel , Embodiment,
Fig. 5 eine Querschnittsansicht einer Fig. 5 is a cross-sectional view of a
Substratbehandlungsanlage gemäß einem ersten fünften Substrate treatment plant according to a first fifth
Ausführungsbeispiel, Embodiment,
Fig. 6 eine Lampenanordnung gemäß einem sechsten 6 shows a lamp arrangement according to a sixth
Ausführungsbeispiel , Embodiment,
Fig. 7 eine Lampenanordnung gemäß einem siebten Fig. 7 shows a lamp assembly according to a seventh
Ausführungsbeispiel . Fig. 1 zeigt eine Teilansicht einer Anlagenkammer 1, die Teil einer Substratbehandlungsanlage zur Vakuumbehandlung plattenförmiger Substrate ist. Die Anlagenkammer 1 weist Seitenwände 11, einen Boden 12 sowie Flansche 13 auf, auf die ein hier nicht dargestellter Deckel aufsetzbar ist, so dass die Anlagenkammer 1 durch den Deckel verschließbar ist. In der Anlagenkammer 1 ist eine Transporteinrichtung 2 für die Substrate 3 angeordnet. Die Transporteinrichtung 2 ist von einer Anordnung von Transportwalzen 22 gebildet, die in einer waagerechten Ebene angeordnet sind, welche in zwei Lagerbänken 21 drehbar gelagert und antreibbar sind und auf die die zu behandelnden Substrate aufgelegt und in einer Transportrichtung 25 durch die Substratbehandlungsanlage bewegt werden. Embodiment. Fig. 1 shows a partial view of a plant chamber 1, which is part of a substrate treatment plant for vacuum treatment of plate-shaped substrates. The plant chamber 1 has side walls 11, a bottom 12 and flanges 13, to which a lid, not shown here, can be placed, so that the plant chamber 1 can be closed by the lid. In the plant chamber 1, a transport device 2 for the substrates 3 is arranged. The transport device 2 is formed by an arrangement of transport rollers 22, which are arranged in a horizontal plane, which are rotatably mounted and drivable in two storage banks 21 and to which the substrates to be treated are placed and moved in a transport direction 25 through the substrate treatment plant.
Gezeigt ist ein Abschnitt dieser Substratbehandlungsanlage, in dem die Substrate einer Behandlung durch Licht unterzogen werden. Hierzu ist oberhalb der Transporteinrichtung 2 ein in einer Ebene angeordnetes Lampenfeld, das im Innern der Anlagenkammer 1 unter dem im Betrieb der Shown is a portion of this substrate processing equipment in which the substrates are subjected to treatment by light. For this purpose, above the transport device 2 is arranged in a plane lamp array, which is in the interior of the installation chamber 1 under the operation of the
Substratbehandlungsanlage die Anlagenkammer 1 Substrate treatment plant, the plant chamber 1
verschließenden, mit dem oberen Flansch 13 verbundenen, hier nicht dargestellten Deckel angeordnet ist. Dazu sind quer zur Transportrichtung 25 der Substrate in einer waagerechten Ebene, die parallel und oberhalb der Transportebene der Substrate liegt, mehrere Quarzglasrohre 41 (Flow Tubes) durch die Anlagenkammer 1 so geführt und beispielsweise in Dichtungsringen gelagert, dass sie die Seitenwände 11 der Anlagenkammer 1 durchdringen. Dadurch herrscht in den Rohren 41 Atmosphärendruck, auch wenn die durch einen Deckel verschlossene Anlagenkammer 1 im Betrieb der Anlage occlusive, connected to the upper flange 13, not shown cover is arranged. These are transverse to the transport direction 25 of the substrates in a horizontal Level, which is parallel to and above the transport plane of the substrates, a plurality of quartz glass tubes 41 (flow tubes) guided through the plant chamber 1 and stored for example in sealing rings that they penetrate the side walls 11 of the plant chamber 1. As a result, atmospheric pressure prevails in the tubes 41, even if the system chamber 1 closed by a cover is in operation of the system
evakuiert ist. Diese Rohre 41 bilden somit vakuumdichte Behälter 4 für die Lampen, die zumindest teilweise is evacuated. These tubes 41 thus form vacuum-tight container 4 for the lamps, at least partially
lichtdurchlässig sind. are translucent.
Durch die Rohre 41 können sodann Lampen geführt werden, die die optische Behandlung der Substrate bewirken, welche auf der Transporteinrichtung 2 unter den Lampen hindurch durch die Substratbehandlungsanlage bewegt werden. Dadurch wird es sowohl möglich, die Lampen in Atmosphärendruck zu The tubes 41 can then be used to guide lamps, which cause the optical treatment of the substrates, which are moved on the transport device 2 under the lamps through the substrate treatment plant. This makes it possible both to increase the lamps in atmospheric pressure
installieren als auch die Lampen mit Luft zu kühlen als auch die Lampen bedarfsweise auszuwechseln, ohne dass deswegen die Anlagenkammer 1 belüftet werden muss. In diesem install as well as cool the lamps with air and replace the lamps as needed, without that the system chamber 1 must be ventilated. In this
Ausführungsbeispiel weisen die Rohre 41 einen kreisförmigen Querschnitt auf. Dadurch sind einerseits die Rohre 41 besonders einfach und damit kostengünstig herstellbar, andererseits besonders druckfest. Im Vergleich zu dem zuvor beschriebenen Sichtfenster skaliert die Wanddicke der Rohre 41 nicht mit der Anzahl der Lampen und nur geringfügig mit deren Länge aufgrund der erforderlichen mechanischen Embodiment, the tubes 41 have a circular cross-section. As a result, on the one hand the tubes 41 are particularly simple and therefore inexpensive to produce, on the other hand particularly pressure resistant. Compared to the viewing window described above, the wall thickness of the tubes 41 does not scale with the number of lamps and only slightly with their length due to the required mechanical
Festigkeit . Strength.
Fig. 2 zeigt einen Querschnitt durch eine Fig. 2 shows a cross section through a
Substratbehandlungsanlage des in Fig. 1 gezeigten Typs mit geschlossenem Deckel 14, der auf den Flanschen 13 an den oberen Kanten der Seitenwände 11 der Anlagenkammer 1 aufliegt, wobei oberhalb der Anordnung von in Gehäusen 4 aus Glasrohren 41 angeordneten Lampen 5 ein plattenförmiges Reflektorelement 6 angeordnet ist. Dieses Reflektorelement 6 dient der Zündung der Lampen 5. Bei langen Lampen 5 ist es nur mit relativ hohen Energieverlust und/oder aufwendiger Elektronik möglich, eine Zündung der Gasentladung durch Anlegen einer Hochspannung an die an den Enden der Substrate treatment plant of the type shown in Fig. 1 with a closed lid 14, which rests on the flanges 13 at the upper edges of the side walls 11 of the plant chamber 1, wherein above the arrangement of arranged in housings 4 of glass tubes 41 lamps 5, a plate-shaped reflector element 6 is arranged , This reflector element 6 serves to ignite the lamps 5. With long lamps 5 it is only possible with relatively high energy loss and / or complex electronics, ignition of the gas discharge by applying a high voltage to the at the ends of the
jeweiligen Lampe 5 angeordneten Elektroden, zu erreichen. Eine externe Zündung durch das Reflektorelement 6 ist wesentlich einfacher zur realisieren und ermöglicht zudem eine galvanische Trennung zur Stromversorgung der Lampe 5. respective lamp 5 arranged electrodes to reach. An external ignition by the reflector element 6 is much easier to realize and also allows a galvanic isolation for the power supply of the lamp fifth
Fig. 3 zeigt ein Ausführungsbeispiel, bei dem gerade Rohre 41 in Einstülpungen 15 des Deckels 14 gelagert sind, so dass die Rohre 41 und die darin angeordneten Lampen 5 sich im Vakuum innerhalb der Anlagenkammer 1 befinden, wobei die Enden der Rohre 41 in die Atmosphäre außerhalb der Fig. 3 shows an embodiment in which straight tubes 41 are mounted in indentations 15 of the lid 14, so that the tubes 41 and the lamps 5 disposed therein are in vacuum within the plant chamber 1, wherein the ends of the tubes 41 into the atmosphere except for
Anlagenkammer 1 Vakuumkammer münden und dort mit Spannung versorgt werden können. Die Einstülpungen 15 des Deckels 14 bilden somit Wände der Anlagenkammer, durch die sich die Rohre hindurch erstrecken. Für einen leichteren Austausch der Lampen 5 können die Einstülpungen 15 lösbar mit dem Deckel 14 verbunden sein. Die außerhalb der Anlagenkammer 1 mündenden Rohre 41, die jeweils ein Gehäuse 4 für eine Lampe 5 bilden, können durch ihre außen liegenden Öffnungen 44 auch zum Ein- und Ausleiten von Kühlmittel verwendet werden. Dazu können an den Öffnungen 44 Kühlmittelanschlüsse Plant chamber 1 open the vacuum chamber and can be supplied with voltage there. The indentations 15 of the lid 14 thus form walls of the plant chamber, through which the tubes extend. For easier replacement of the lamps 5, the indentations 15 can be detachably connected to the cover 14. The outside of the plant chamber 1 opening tubes 41, each forming a housing 4 for a lamp 5, can be used by their outer openings 44 for introducing and discharging coolant. For this purpose, at the openings 44 coolant connections
angeordnet sein. be arranged.
Fig. 4 zeigt ein Ausführungsbeispiel, bei dem gerade Rohre 41 im Deckel 14 der Anlagenkammer 1 gelagert sind, so dass sie deren Seitenwände 11 durchdringen und die Rohre 41 und die darin angeordneten Lampen 5 sich im Vakuum innerhalb der Anlagenkammer 1 befinden, wobei die Enden der Rohre 41 in die Atmosphäre außerhalb der Anlagenkammer 1 münden und dort mit Spannung versorgt werden können. Fig. 4 shows an embodiment in which straight tubes 41 are mounted in the lid 14 of the system chamber 1 so that they penetrate the side walls 11 and the tubes 41 and the lamps 5 disposed therein are in vacuum within the system chamber 1, the ends the pipes 41 open into the atmosphere outside the plant chamber 1 and can be supplied there with voltage.
Fig. 6 zeigt eine flächenhafte Anordnung von Lampen 5 gemäß einem Ausführungsbeispiel, bei dem die Rohre 41 - anders als bei den oben beschriebenen Ausführungsformen - in Rohren 41 mit rechteckigem Querschnitt angeordnet sind. Dadurch kann eine geringe Wandstärke der Rohre 41 bei gleichzeitig hoher Packungsdichte der Lampen 5 erreicht werden. Die den Fig. 6 shows a planar arrangement of lamps 5 according to an embodiment in which the tubes 41 - unlike the embodiments described above - are arranged in tubes 41 with a rectangular cross-section. This can a small wall thickness of the tubes 41 at the same time high packing density of the lamps 5 can be achieved. The the
Substraten 3 abgewandten (horizontalen) Flächen der Rohre 41 sowie die zwischen den Lampen 5 befindlichen (senkrechten) Flächen der Rohre 41 können auch mit einem elektrisch leitenden Material wie Aluminium oder dergleichen Substrates 3 facing away from (horizontal) surfaces of the tubes 41 and located between the lamps 5 (vertical) surfaces of the tubes 41 may also be with an electrically conductive material such as aluminum or the like
beschichtet sein. Damit können die beschichteten Flächen, wenn sie entsprechend mit einem elektrischen Potential beaufschlagt werden, ein Reflektorelement 6 darstellen, das zur Zündung der Lampen 5 dienen kann, wie oben beschrieben. Dasselbe wäre im übrigen auch bei den im Querschnitt be coated. Thus, the coated surfaces, if they are applied in accordance with an electric potential, represent a reflector element 6, which can serve to ignite the lamps 5, as described above. Incidentally, the same would be the case in the cross section
kreisrunden Rohren 41 der oben beschriebenen circular tubes 41 of the above-described
Ausführungsformen möglich, wobei dort nur die von den Embodiments possible, where only those of the
Substraten 3 abgewandten Teile der Mantelfläche der Rohre 41 beschichtet werden sollten und die den Substraten 3 Substrates 3 facing away from the lateral surface of the tubes 41 should be coated and the substrates. 3
zugewandten Teile der Mantelfläche der Rohre 41 facing parts of the lateral surface of the tubes 41st
lichtdurchlässig bleiben sollten. should remain translucent.
Fig. 7 zeigt weiter alternativ eine Lampenanordnung in einem Gehäuse 4, das im Gegensatz zu den bisher vorgestellten Rohren 41 nicht nur eine Lampe 5, sondern eine ganze FIG. 7 further shows alternatively a lamp arrangement in a housing 4, which, in contrast to the previously presented tubes 41, not only a lamp 5, but a whole
flächenhafte Anordnung von Lampen 5 aufnehmen kann. Dieses Gehäuse 4 ist gebildet aus zwei Platten 42, von denen mindestens eine aus einem lichtdurchlässigen Material, beispielsweise Quarzglas, besteht, sowie Stegen in Form von Plattenstreifen 43, die zwischen den beiden Platten 42 angeordnet und mit diesen verbunden sind, um die Festigkeit des Gehäuses 4 zu erhöhen. Die andere Platte 42 kann can accommodate planar arrangement of lamps 5. This housing 4 is formed of two plates 42, at least one of which is made of a translucent material, such as quartz glass, and webs in the form of plate strips 43 which are arranged between the two plates 42 and connected to these, the strength of the housing 4 increase. The other plate 42 can
ebenfalls aus einem lichtdurchlässigen Material wie also made of a translucent material like
Quarzglas oder dergleichen bestehen, aber auch aus anderen Materialien, beispielsweise elektrisch leitendem Material wie Aluminium oder dergleichen bestehen oder mit elektrisch leitendem Material wie Aluminium oder dergleichen Quartz glass or the like, but also made of other materials, such as electrically conductive material such as aluminum or the like, or with electrically conductive material such as aluminum or the like
beschichtet sein. In diesem Fall kann die andere Platte gleichzeitig ein Kondensatorelement darstellen, das zur Zündung der Lampen 5 dienen kann, wie oben beschrieben. Gleiches gilt für die zwischen den beiden Platten 42 be coated. In this case, the other plate may simultaneously constitute a capacitor element which can serve to ignite the lamps 5, as described above. The same applies to the between the two plates 42nd
angeordneten Plattenstreifen 43. arranged plate strip 43rd
In allen Ausführungsbeispielen können die beschichteten bzw. aus leitfähigem Material bestehenden Bestandteile des In all embodiments, the coated or made of conductive material components of the
Gehäuses 4 gleichzeitig als Reflektoren wirken, um das Licht der Lampen 5 besser auszunutzen. Housing 4 at the same time act as reflectors to better exploit the light of the lamps 5.
Substratbehandlungsanlage Substrate treatment plant
Bezugszeichenliste LIST OF REFERENCE NUMBERS
1 Anlagenkammer 1 plant chamber
11 Seitenwand  11 sidewall
12 Boden  12 floor
13 Flansch 13 flange
14 Deckel  14 lids
15 Einstülpung  15 invagination
2 Transporteinrichtung  2 transport device
21 Lagerbank 21 storage bank
22 Transportwalze 22 transport roller
23 Antriebsrad  23 drive wheel
24 Antriebsriemen  24 drive belts
25 Transportrichtung  25 transport direction
3 Substrat  3 substrate
4 Gehäuse 4 housing
41 Rohr  41 pipe
42 Platte  42 plate
43 Plattenstreifen  43 plate strips
44 Öffnung  44 opening
5 Lampe 5 lamp
6 Reflektorelement  6 reflector element

Claims

Substratbehandlungsanlage Substrate treatment plant
Patentansprüche claims
Substratbehandlungsanlage, umfassend eine Anlagenkamme (1) und eine Lichtquelle zur Belichtung von Substraten (3), wobei die Lichtquelle im Innern der Anlagenkammer (1) angeordnet ist und mindestens eine in einem zumindest abschnittsweise lichtdurchlässigen, einen vakuumdichten Hohlraum zur Aufnahme einer Lampe (5) aufweisenden Gehäuse (4) angeordnete Lampe (5) sowie mindestens ein in räumlicher Nähe zu der mindestens einen Lampe (5) angeordnetes Reflektorelement (6) mit einem elektrischen Anschluss umfasst. Substrate treatment plant, comprising a plant chamber (1) and a light source for exposing substrates (3), wherein the light source is arranged inside the plant chamber (1) and at least one in an at least partially transparent, a vacuum-tight cavity for receiving a lamp (5) comprising a housing (4) arranged lamp (5) and at least one in spatial proximity to the at least one lamp (5) arranged reflector element (6) with an electrical connection.
Substratbehandlungsanlage nach Anspruch 1, dadurch gekennzeichnet, dass das Gehäuse (4) mindestens ein Rohr (41) aus einem lichtdurchlässigen Material umfasst . Substrate treatment plant according to claim 1, characterized in that the housing (4) comprises at least one tube (41) made of a light-transmitting material.
Substratbehandlungsanlage nach Anspruch 1, dadurch gekennzeichnet, dass das Gehäuse (4) mindestens zwei parallel zueinander angeordnete Platten (42) und mindestens zwei die Platten (42) verbindende Substrate treatment plant according to claim 1, characterized in that the housing (4) at least two parallel plates (42) and at least two of the plates (42) connecting
Plattenstreifen (43) umfasst, wobei mindestens eine Platte (42) aus einem lichtdurchlässigen Material besteht . Plate strip (43), wherein at least one plate (42) consists of a translucent material.
Substratbehandlungsanlage nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass das Gehäuse (4) sich durch mindestens eine Wand (11,15) der Substrate treatment plant according to one of claims 1 to 3, characterized in that the housing (4) through at least one wall (11,15) of the
Anlagenkammer (1) hindurch erstreckt und an der Plant chamber (1) extends through and at the
Außenseite der Anlagenkammer (1) mindestens eine Outside of the plant chamber (1) at least one
Öffnung (44) aufweist, durch die der Hohlraum des Gehäuses (4) von außerhalb der Anlagenkammer (1) zugänglich ist. Opening (44) through which the cavity of the housing (4) from outside the plant chamber (1) is accessible.
5. Substratbehandlungsanlage nach Anspruch 4, dadurch 5. Substrate treatment plant according to claim 4, characterized
gekennzeichnet, dass die mindestens eine Öffnung (44) als Kühlmittelanschluss ausgebildet ist.  characterized in that the at least one opening (44) is designed as a coolant connection.
6. Substratbehandlungsanlage nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass die Lichtquelle mindestens zwei in einer Ebene angeordnete stabförmige Lampen (5) umfasst und das Reflektorelement (6) mindestens eine in einer dazu parallelen Ebene 6. Substrate treatment plant according to one of claims 1 to 5, characterized in that the light source comprises at least two arranged in a plane rod-shaped lamps (5) and the reflector element (6) at least one in a plane parallel thereto
angeordnete elektrisch leitende oder elektrisch leitend beschichtete Platte umfasst.  arranged electrically conductive or electrically conductive coated plate comprises.
7. Substratbehandlungsanlage nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, dass das 7. Substrate treatment plant according to one of claims 1 to 6, characterized in that the
Reflektorelement (6) Bestandteil des Gehäuses (4) ist.  Reflector element (6) is part of the housing (4).
8. Substratbehandlungsanlage nach einem der Ansprüche 1 bis 7, dadurch gekennzeichnet, dass das 8. Substrate treatment plant according to one of claims 1 to 7, characterized in that the
Reflektorelement (6) eine metallische Schicht ist, die auf einem Bestandteil des Gehäuses (4) angebracht ist.  Reflector element (6) is a metallic layer which is mounted on a part of the housing (4).
EP12718967.8A 2011-04-29 2012-04-27 Substrate treatment installation Ceased EP2702608A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102011100098 2011-04-29
DE102011081749.2A DE102011081749B4 (en) 2011-04-29 2011-08-29 Substrate treatment plant
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Families Citing this family (245)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US20130216967A1 (en) * 2010-08-27 2013-08-22 Saint-Gobain Glass France Device and method for heat-treating a plurality of multi-layer bodies
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
DE102013100520B4 (en) * 2012-12-28 2017-06-01 Von Ardenne Gmbh Flash lamp assembly and method for igniting same
DE102014105300A1 (en) 2014-03-12 2015-09-17 Von Ardenne Gmbh Processing arrangement and method for operating a processing arrangement
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
DE102015106962A1 (en) * 2015-05-05 2016-11-10 Von Ardenne Gmbh Irradiation device, processing arrangement and method for operating an irradiation device
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
DE102015113766B4 (en) * 2015-08-19 2019-07-04 Heraeus Noblelight Gmbh Radiator module and use of the radiator module
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (en) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and method of operating the same
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
KR102546317B1 (en) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Gas supply unit and substrate processing apparatus including the same
KR20180068582A (en) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR20180070971A (en) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
HUE051753T2 (en) * 2017-01-26 2021-03-29 Gross Leander Kilian Method and device for separating different material layers of a composite component
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
KR102457289B1 (en) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. Method for depositing a thin film and manufacturing a semiconductor device
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US20180363139A1 (en) * 2017-06-20 2018-12-20 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (en) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. Methods for forming a semiconductor device structure and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102491945B1 (en) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102630301B1 (en) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
JP7206265B2 (en) 2017-11-27 2023-01-17 エーエスエム アイピー ホールディング ビー．ブイ． Equipment with a clean mini-environment
KR102597978B1 (en) 2017-11-27 2023-11-06 에이에스엠 아이피 홀딩 비.브이. Storage device for storing wafer cassettes for use with batch furnaces
DE102017130941A1 (en) * 2017-12-21 2019-06-27 VON ARDENNE Asset GmbH & Co. KG Processing arrangement and method
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
KR20200108016A (en) 2018-01-19 2020-09-16 에이에스엠 아이피 홀딩 비.브이. Method of depositing a gap fill layer by plasma assisted deposition
TWI799494B (en) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 Deposition method
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
JP7124098B2 (en) 2018-02-14 2022-08-23 エーエスエム・アイピー・ホールディング・ベー・フェー Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
KR102636427B1 (en) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. Substrate processing method and apparatus
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (en) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
KR102501472B1 (en) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. Substrate processing method
TW202344708A (en) 2018-05-08 2023-11-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
KR20190129718A (en) 2018-05-11 2019-11-20 에이에스엠 아이피 홀딩 비.브이. Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures
KR102596988B1 (en) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. Method of processing a substrate and a device manufactured by the same
TW202013553A (en) 2018-06-04 2020-04-01 荷蘭商Ａｓｍ 智慧財產控股公司 Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (en) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing system
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
KR20210027265A (en) 2018-06-27 2021-03-10 에이에스엠 아이피 홀딩 비.브이. Periodic deposition method for forming metal-containing material and film and structure comprising metal-containing material
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
KR20200002519A (en) 2018-06-29 2020-01-08 에이에스엠 아이피 홀딩 비.브이. Method for depositing a thin film and manufacturing a semiconductor device
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR20200030162A (en) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. Method for deposition of a thin film
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344A (en) 2018-10-01 2020-04-07 Asm Ip控股有限公司 Substrate holding apparatus, system including the same, and method of using the same
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (en) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102605121B1 (en) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
KR102546322B1 (en) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (en) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and substrate processing apparatus including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (en) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. A method for cleaning a substrate processing apparatus
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP2020096183A (en) 2018-12-14 2020-06-18 エーエスエム・アイピー・ホールディング・ベー・フェー Method of forming device structure using selective deposition of gallium nitride, and system for the same
TWI819180B (en) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
KR20200091543A (en) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. Semiconductor processing device
CN111524788B (en) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 Method for topologically selective film formation of silicon oxide
KR102626263B1 (en) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. Cyclical deposition method including treatment step and apparatus for same
TW202104632A (en) 2019-02-20 2021-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
KR20200102357A (en) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for plug fill deposition in 3-d nand applications
TW202044325A (en) 2019-02-20 2020-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of filling a recess formed within a surface of a substrate, semiconductor structure formed according to the method, and semiconductor processing apparatus
TW202100794A (en) 2019-02-22 2021-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing apparatus and method for processing substrate
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
KR20200108243A (en) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. Structure Including SiOC Layer and Method of Forming Same
KR20200108242A (en) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer
KR20200116033A (en) 2019-03-28 2020-10-08 에이에스엠 아이피 홀딩 비.브이. Door opener and substrate processing apparatus provided therewith
KR20200116855A (en) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. Method of manufacturing semiconductor device
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (en) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. Gas-phase reactor system and method of using same
KR20200130118A (en) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. Method for Reforming Amorphous Carbon Polymer Film
KR20200130121A (en) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. Chemical source vessel with dip tube
KR20200130652A (en) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. Method of depositing material onto a surface and structure formed according to the method
JP2020188255A (en) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． Wafer boat handling device, vertical batch furnace, and method
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
US20200373195A1 (en) * 2019-05-20 2020-11-26 Applied Materials, Inc. Processing chamber for thermal processes
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (en) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. Gas-phase reactor system including a gas detector
KR20200143254A (en) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (en) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. Temperature control assembly for substrate processing apparatus and method of using same
JP2021015791A (en) 2019-07-09 2021-02-12 エーエスエム アイピー ホールディング ビー．ブイ． Plasma device and substrate processing method using coaxial waveguide
CN112216646A (en) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 Substrate supporting assembly and substrate processing device comprising same
KR20210010307A (en) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
KR20210010816A (en) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. Radical assist ignition plasma system and method
KR20210010820A (en) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. Methods of forming silicon germanium structures
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
CN112242296A (en) 2019-07-19 2021-01-19 Asm Ip私人控股有限公司 Method of forming topologically controlled amorphous carbon polymer films
TW202113936A (en) 2019-07-29 2021-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
CN112309899A (en) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112309900A (en) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 Substrate processing apparatus
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
CN112323048B (en) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 Liquid level sensor for chemical source container
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (en) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． Production apparatus of mixed gas of film deposition raw material and film deposition apparatus
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
KR20210024423A (en) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. Method for forming a structure with a hole
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (en) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
KR20210029090A (en) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. Methods for selective deposition using a sacrificial capping layer
KR20210029663A (en) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (en) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process
TW202129060A (en) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 Substrate processing device, and substrate processing method
TW202115273A (en) 2019-10-10 2021-04-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming a photoresist underlayer and structure including same
KR20210045930A (en) 2019-10-16 2021-04-27 에이에스엠 아이피 홀딩 비.브이. Method of Topology-Selective Film Formation of Silicon Oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (en) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for selectively etching films
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (en) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (en) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
CN112951697A (en) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 Substrate processing apparatus
KR20210065848A (en) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112885692A (en) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112885693A (en) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 Substrate processing apparatus
JP2021090042A (en) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． Substrate processing apparatus and substrate processing method
KR20210070898A (en) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
KR20210080214A (en) 2019-12-19 2021-06-30 에이에스엠 아이피 홀딩 비.브이. Methods for filling a gap feature on a substrate and related semiconductor structures
KR20210095050A (en) 2020-01-20 2021-07-30 에이에스엠 아이피 홀딩 비.브이. Method of forming thin film and method of modifying surface of thin film
TW202130846A (en) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming structures including a vanadium or indium layer
KR20210100010A (en) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. Method and apparatus for transmittance measurements of large articles
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
TW202146715A (en) 2020-02-17 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for growing phosphorous-doped silicon layer and system of the same
KR20210116249A (en) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. lockout tagout assembly and system and method of using same
KR20210116240A (en) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. Substrate handling device with adjustable joints
KR20210117157A (en) 2020-03-12 2021-09-28 에이에스엠 아이피 홀딩 비.브이. Method for Fabricating Layer Structure Having Target Topological Profile
KR20210124042A (en) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. Thin film forming method
TW202146689A (en) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 Method for forming barrier layer and method for manufacturing semiconductor device
TW202145344A (en) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Apparatus and methods for selectively etching silcon oxide films
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
TW202140831A (en) 2020-04-24 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming vanadium nitride–containing layer and structure comprising the same
KR20210132600A (en) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
KR20210132605A (en) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. Vertical batch furnace assembly comprising a cooling gas supply
KR20210134226A (en) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. Solid source precursor vessel
KR20210134869A (en) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Fast FOUP swapping with a FOUP handler
KR20210141379A (en) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. Laser alignment fixture for a reactor system
KR20210143653A (en) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
KR20210145078A (en) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. Structures including multiple carbon layers and methods of forming and using same
TW202201602A (en) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing device
TW202218133A (en) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming a layer provided with silicon
TW202217953A (en) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing method
TW202219628A (en) 2020-07-17 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Structures and methods for use in photolithography
TW202204662A (en) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method and system for depositing molybdenum layers
KR20220027026A (en) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. Method and system for forming metal silicon oxide and metal silicon oxynitride
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TW202229613A (en) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of depositing material on stepped structure
TW202217037A (en) 2020-10-22 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of depositing vanadium metal, structure, device and a deposition assembly
TW202223136A (en) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming layer on substrate, and semiconductor processing system
KR20220076343A (en) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. an injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (en) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3733599A (en) * 1970-09-22 1973-05-15 Xerox Corp Triggering apparatus for a flash lamp

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1910505U (en) * 1963-10-04 1965-02-25 Egyesuelt Izzolampa REFLECTOR, TRIM STRIPS AND REFRIGERATING FIBER FOR ELECTRIC DISCHARGE LAMPS, IN PARTICULAR LIGHT TUBES.
DE19631188A1 (en) 1996-08-02 1998-02-05 Heraeus Kulzer Gmbh Discharge lamp arrangement
US5951896A (en) * 1996-12-04 1999-09-14 Micro C Technologies, Inc. Rapid thermal processing heater technology and method of use
WO1998036439A2 (en) 1997-01-30 1998-08-20 Wilhelmus Hermanus Iding Lighting unit with integrated reflector-antenna
US6631726B1 (en) * 1999-08-05 2003-10-14 Hitachi Electronics Engineering Co., Ltd. Apparatus and method for processing a substrate
DE50009507D1 (en) 1999-11-09 2005-03-17 Ct Therm Elek Sche Anlagen Gmb RADIATION HEATING WITH A HIGH INFRARED RADIATION POWER FOR MACHINING CHAMBERS
US6707011B2 (en) * 2001-04-17 2004-03-16 Mattson Technology, Inc. Rapid thermal processing system for integrated circuits
US6600138B2 (en) * 2001-04-17 2003-07-29 Mattson Technology, Inc. Rapid thermal processing system for integrated circuits
JP4380236B2 (en) * 2003-06-23 2009-12-09 東京エレクトロン株式会社 Mounting table and heat treatment device
JP4917993B2 (en) * 2007-08-09 2012-04-18 ハリソン東芝ライティング株式会社 UV irradiation equipment
JP4993413B2 (en) 2007-08-21 2012-08-08 荒川化学工業株式会社 Resin composition for forming antistatic layer and antistatic film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3733599A (en) * 1970-09-22 1973-05-15 Xerox Corp Triggering apparatus for a flash lamp

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