Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02002—Preparing wafers
  • H01L21/02005—Preparing bulk and homogeneous wafers
  • H01L21/02008—Multistep processes
  • H01L21/0201—Specific process step
  • H01L21/02016—Backside treatment
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
  • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
  • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
  • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
  • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
  • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
  • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
  • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
  • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
  • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Definitions

• the invention relates to a method according to claim 1 for Ablö Sen a product substrate of a carrier substrate.
• the thinning of product substrates is often required in the semiconductor industry and can be mechanical and / or chemical.
• the product substrates are usually temporarily fixed to a carrier, with different methods of fixation.
• carrier material for example, films,
• Bonding Depending on the carrier material used and the bonding layer used between carrier and product substrate, various methods for dissolving or destroying the substrate are known Bonding known, such as the use of UV light, laser beams, temperature or solvent.
• the thin substrates have little to no dimensional stability and typically curl without support material.
• fixing and supporting the wafers is practically unavoidable.
• Dissolve connecting layer ago but to solve the connection layer over the largest possible surface of the adhesive surface to the carrier substrate, in particular supported by Kavitati onser Wegungsmittel, preferably a standing in contact with the solvent ultrasonic transducer.
• This is achieved according to the invention such that a carrier substrate is penetrated by channels and / or a porous
• Carrier substrate is used.
• the solvent thus receives virtually full-surface access to the connecting layer and can the
• Bonding layer thus attack and dissolve over the entire surface practically along the entire contact surface to the carrier substrate.
• Product substrate is a product substrate, for example, a
• the bonding layer is an adhesive, for example a releasable adhesive, in particular a thermoplastic in question, the entire surface
• low-adhesion layer for example a fluoropolymer, preferably Teflon
• a receiving device is particularly suitable Chuck, in particular a spinner chuck for receiving the carrier substrate, in particular by means of negative pressure, for example on suction tracks, holes or
• Suction cups Suction cups.
• a mechanical recording for example by lateral brackets, conceivable.
• lateral brackets for example by lateral brackets
• Release means comprise, when using a film frame, the film mounted on the film frame and a film frame receiving and force-imparting film frame receiver. Otherwise, the release means comprise a chuck which seals the carrier substrate with a
• the connecting layer is released uniformly distributed along the carrier substrate.
• the carrier substrate is particularly gently detachable from the product substrate.
• the inventive method is dramatically accelerated.
• the ultrasound accelerates the diffusion of solvent molecules of the solvent through pores and / or channels of the carrier substrate and also the dissolution of the connecting layer takes place much faster if the dissolution is excited by ultrasonic vibrations.
• the reason for this lies in the so-called cavitation. Cavitation is the formation and dissolution of cavities in liquids due to pressure fluctuations. These cavities will produce an extremely high surface damage to a solid bounded by the liquid. Due to the cavitation, the bonding layer is mechanically destroyed at least partially. This effect is in the art, especially in shipping through the
• 2004/01 8886 1 A I by the fact that the induced sound waves not only transport the molecules more efficiently through the channels, but also cause the cavitation to be responsible for the damage to the adhesive.
• Ultrasonic vibrations having a frequency between 1 6 kHz and 1 GHz, in particular between 500 kHz and 1500 kHz, preferably between 800 kHz and 1200 kHz, are particularly advantageous.
• Ultrasonic vibrations having a frequency between 1 6 kHz and 1 GHz, in particular between 500 kHz and 1500 kHz, preferably between 800 kHz and 1200 kHz, are particularly advantageous.
• Solvent container trough-shaped, whereby with a minimum solvent consumption, the detachment of the product substrate can be achieved.
• FIG. 1 shows a schematic side view of a product substrate
• FIG. 2 shows a schematic side view of a product substrate
• a substrate composite 1 1 which consists of a
• Carrier substrate 3 in particular a wafer, a product substrate 7, in particular a structure wafer, and a connecting layer 6, in particular an adhesive, temporarily bonding the product substrate 7 on the carrier substrate 3.
• the carrier substrate 3 is subjected to a solvent 9 for dissolving the connecting layer 6, specifically at least at a flat side 3 o facing away from the connecting layer 6
• Carrier substrate 3 which is arranged at the top in the plane of the drawing.
• the solvent 9 is on the support substrate 3 according to the
• Embodiment according to Figure 1 in a thin layer, without that larger amounts run over the edge of the carrier substrate 3. Rather, the solvent 9 penetrates into channels 5 and / or pores through an open porosity of the carrier substrate 3 into the carrier substrate 3, which in the present embodiment is due to gravity.
• the application of the solvent 9 is carried out by a non dargestel LTE means for introducing the solvent s 9 sammenungswei se application of the solvent 9, for example, a nozzle, with a
• the substrate composite 1 1 l alsgt on a Fil m 2 of a film frame 1, which is provided as a flex ibl e film.
• Fi lmrahmen 1 a gleichmäßi ger distance is present. This distance and the flexibility of the film 2 are opposed by
• Solvent container 1 2 thereby has a trough shape.
• Carrier substrate 3 starting from the flat side 3 o to the
• Connection layer 6 reaches, the dissolution of the connecting layer 6 begins, while the remaining portion of the solvent 9 remains on the carrier substrate 3.
• an ultrasonic transducer 1 0 In the remaining portion of an ultrasonic transducer 1 0 is immersed to pressurize the solvent 9 with ultrasonic vibrations. The ultrasonic vibrations are from the remaining portion through the
• Carrier substrate transmitted through the flow rate of the solvent into the bonding layer 6, so that both the permeation or the flow through the solvent 9 through the
• Carrier substrate 3 and the release of the connecting layer are greatly accelerated.
• the present invention is not based on the use of a
• Fi lmrahmens 1 limited with a Fi lm 2, but alternatively it is inventively conceivable, the substrate composite 1 1 immersed in a trough m with solvent.
• the use of the frame I is however advantageous because the film frame 1 not only for the pre- and further processing of the substrate composite 1 1 and the
• Product substrate 7, in particular as a cutting frame, can be used, but at the same time as inventive
• Solvent container is used.
• the channels 5 are preferably as evenly along the flat side 3 o of the support substrate 3 distri lte, in particular transversely to the flat side 3 o, preferably straight, extending channels 5 is formed.
• the detachment of the product substrate 7 from the carrier substrate 3 takes place after the at least partial release of the connecting layer 6, by a tensile force on the flat side 3o of the carrier substrate 3, ie in the
• Drawing plane up is applied, in particular with a receiving device for wafers, such as a chuck.
• a receiving device for wafers such as a chuck.
• Carrier substrate 3 reaches, concentrically starting from the side edge of the substrate composite 1 1.
• the product substrate 7 is fixed on its side facing away from the connecting layer 6 flat side 7o on the film 2, which is configured in particular as an adhesive film. After detachment, only the product substrate 7 remains on the film 2 of the film frame 1, so that the product substrate 7 with the film frame 1 to another
• Processing steps can be performed.

Landscapes

• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
• Application Of Or Painting With Fluid Materials (AREA)
• Mechanical Treatment Of Semiconductor (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=44475005

Family Applications (1)

Country Status (8)

Families Citing this family (6)

Citations (1)

Family Cites Families (8)

• 2011
  • 2011-01-17 WO PCT/EP2011/000173 patent/WO2012097830A1/fr active Application Filing
  • 2011-01-17 SG SG2013054309A patent/SG191990A1/en unknown
  • 2011-01-17 CN CN201180065137XA patent/CN103299416A/zh active Pending
  • 2011-01-17 JP JP2013548744A patent/JP2014504024A/ja active Pending
  • 2011-01-17 US US13/978,159 patent/US20130288454A1/en not_active Abandoned
  • 2011-01-17 EP EP11700807.8A patent/EP2666185A1/fr not_active Withdrawn
  • 2011-01-17 KR KR1020137018405A patent/KR20140033327A/ko not_active Application Discontinuation
  • 2011-11-30 TW TW100144024A patent/TW201246417A/zh unknown

Patent Citations (1)

Non-Patent Citations (2)

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