EP2656403A1 - Procédé de fabrication d'un composant optoélectronique et composant optoélectronique - Google Patents

Procédé de fabrication d'un composant optoélectronique et composant optoélectronique

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Publication number
EP2656403A1
EP2656403A1 EP11796700.0A EP11796700A EP2656403A1 EP 2656403 A1 EP2656403 A1 EP 2656403A1 EP 11796700 A EP11796700 A EP 11796700A EP 2656403 A1 EP2656403 A1 EP 2656403A1
Authority
EP
European Patent Office
Prior art keywords
layer
local
substrate
electrode layer
local change
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11796700.0A
Other languages
German (de)
English (en)
Inventor
Daniel Steffen Setz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of EP2656403A1 publication Critical patent/EP2656403A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Definitions

  • the invention relates to a method for producing an optoelectronic component and to an optoelectronic component.
  • an organic light-emitting diode that is from this
  • organic light emitted light in part directly coupled out of the organic light emitting diode.
  • the remaining light is distributed in different loss channels, as in a representation of an organic light emitting diode 100 in Fig.1
  • FIG. 1 shows an organic light-emitting diode 100 with a glass substrate 102 and a transparent first electrode layer 104 made of indium tin oxide (ITO) arranged thereon.
  • a first organic layer 106 is arranged, on which an emitter layer 108 is arranged.
  • a second organic layer 110 is disposed. Furthermore, a second one is on the second organic layer 110
  • Electrode layer 112 disposed of a metal.
  • An electrical power supply 114 is connected to the first one
  • a first arrow 116 symbolizes a transfer of electrical energy in surface plasmons in the second electrode layer 112.
  • Another loss channel may be seen in absorption losses in the light emission path (symbolized by a second arrow 118).
  • light coupled out of the organic light emitting diode 100 is a part of the light that arises due to reflection of a part of the light
  • the following loss channels available Loss of light in the glass substrate 102, loss of light in the organic layers 106, 110 as well as on the metallic cathode (second electrode layer 112) generated surface plasmons. These light components can not be readily decoupled from the organic light emitting diode 100.
  • Auskoppelfolien applied, which can decouple the light from the substrate by means of optical scattering or by means of microlenses. It is also known to structure the free substrate surface directly.
  • Crystals can decouple only certain wavelengths.
  • a high refractive substrate for directly coupling the light of the organic layers into the substrate Substrate. This approach is very expensive due to the high cost of a high refractive index substrate. Furthermore, a high-index substrate on further coupling aids in the form of microlenses, scattering films ⁇ each with a high refractive index) or
  • Light-emitting diode with which, for example, both the light in a substrate and the light in one or more organic layers of the optoelectronic device can be coupled out.
  • the light in a substrate and the light in one or more organic layers of the optoelectronic device can be coupled out.
  • Structures are made by means of local heating
  • the method may include forming an organic functional layer structure on or over a first electrode layer; forming a second electrode layer on or over the organic functional layer structure; and forming in at least one of the layers of the optoelectronic device at at least one predetermined position of a local electrode layer;
  • a local change structure for example a plurality of local change structures, can be formed at least one predetermined position by locally heating the material of the respective one
  • the local heating of the material of the respective layer can be carried out using a laser. In yet another embodiment, the local heating of the material of the respective layer can be carried out using the laser such that an internal laser engraving of the respective layer is performed. In yet another embodiment, a local laser beam.
  • the method may further comprise forming the first electrode layer on or over a substrate; and / or forming a cover layer on or over the second electrode layer.
  • a local electrode layer on or over a substrate
  • the method may further comprise forming an optically transparent one
  • translucent layer can be used in
  • a layer is transparent to light, for example, for the light generated by the optoelectronic component, for example, one or more wavelength ranges, for example, light in a wavelength range of visible light (for example, at least in one
  • Translucent layer in various exemplary embodiments is to be understood as meaning that essentially the entire amount of light coupled into a structure (for example a layer) is also coupled out of the structure (for example layer).
  • transparent layer can be used in
  • a layer is permeable to light (for example at least in a partial region of the wavelength range of 380 nm to 780 nm), wherein light coupled into a structure (for example a layer) also emerges from the structure substantially without scattering or light conversion
  • Change structures are formed in the encapsulation layer.
  • the particular layer in which a local change structure (or multiple local change structure) may be used may be used
  • Change structures are formed, are formed with a layer thickness of at least 1 ⁇ .
  • Change structures are also formed at an interface of two layers of the optoelectronic device. In such an embodiment, the sum of the
  • Change structures are formed in a non-periodic, otherwise random, pattern, ie without a regular order.
  • Change structures are formed with a size of at least one micrometer.
  • Change structures are formed in a regular, such as periodic pattern.
  • a local deterministic structure for example, an optical lens structure
  • a local change structure s
  • Optoelectronic component may have a first
  • Electrode layer an organic functional
  • organic functional layer structure wherein at least one of the layers of the optoelectronic component at at least one predetermined position, a local
  • Electrode layer be formed.
  • the device further comprises a substrate, wherein the first electrode layer is disposed on or above the substrate; and / or a cover layer on or over the second
  • Component further comprise an optically transparent
  • Intermediate layer on or above the substrate, wherein the first electrode layer is arranged on or above the optically transparent intermediate layer (or optically translucent intermediate layer); and / or an encapsulation splitter on or over the second electrode layer.
  • Change structure ⁇ or can be multiple local
  • Intermediate layer (or optically translucent intermediate layer) may be formed.
  • a local area network may be formed.
  • Change structures may be formed in the encapsulation layer.
  • this layer may be a local change structure (or multiple local change structure)
  • a layer thickness of at least 1 ⁇ exhibit.
  • a local edge of a layer thickness of at least 1 ⁇ exhibit.
  • Change structures may also be formed at an interface of two layers of the optoelectronic device. In such an embodiment, the sum of the
  • the local Change structures are formed in a non-periodic, otherwise random, pattern, ie without a regular order.
  • the local Change structures are formed in a non-periodic, otherwise random, pattern, ie without a regular order.
  • Change structures may be formed with a size of at least one micrometer. In one embodiment, in which multiple local
  • Variegated structures are formed with a size of at least one micrometer, the local
  • Change structures are formed in a regular, such as periodic pattern.
  • a local deterministic structure eg, an optical lens structure
  • a local change structure s
  • the one or more local change structures may be formed such that that it is or are barely perceptible by a human eye, but nevertheless scatters or scatters a part of the light, thus improving the extraction of the light.
  • Figure 1 is an illustration of a conventional organic compound
  • Figure 2 is an organic light emitting diode according to various aspects
  • Figure is an organic light-emitting diode according to various embodiments
  • Figure 4 shows an organic light emitting diode according to various aspects
  • Figure 5 is an organic light emitting diode according to various aspects
  • FIG. 6 shows an organic light-emitting diode according to various embodiments
  • FIG. 7 shows an organic light-emitting diode according to various aspects
  • FIG. 8 shows an organic light-emitting diode according to various aspects
  • FIG. 9 shows a flowchart in which a method for the
  • the optoelectronic component can be in different
  • Embodiments as an organic light emitting diode (OLED), as a
  • OPD organic photodiode
  • OSC organic solar cell
  • OTFT organic thin film transistor
  • Fig. 2 shows an organic light emitting diode 200 as a
  • the optoelectronic component in the form of an organic light-emitting diode 200 may have a substrate 202.
  • the substrate 202 for example, as a support element for
  • the substrate 202 may include or be formed from glass, quartz, and / or a semiconductor material, or any other suitable material. Further, the substrate 202 may include a
  • the plastic may be one or more polyolefins (eg, high or low density polyethylene (PE) or
  • the plastic may be polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC),
  • PVC polyvinyl chloride
  • PS polystyrene
  • PC polycarbonate
  • the substrate 202 may, for example, comprise a metal foil, for example an aluminum foil, a stainless steel foil, a copper foil or a combination or a layer stack thereon.
  • the substrate 202 may include one or more of the above materials.
  • the substrate 202 may be transparent, translucent, partially translucent, partially transparent, or even opaque.
  • a first electrode 204 (for example in the form of a first electrode layer 204) may be applied.
  • the first electrode 204 (also referred to below as lower electrode 204) may consist of a
  • electrically conductive material or be formed, such as from a metal or a conductive transparent oxide (TCO) or a layer stack of multiple layers thereof or different metal or metals and / or the same or different TCOs.
  • Transparent conductive oxides are transparent, conductive materials, for example metal oxides, such as zinc oxide, tin oxide,
  • binary metal oxygen compounds such as ZnO, SnO 2 or 1 ⁇ 03
  • ternary metal oxygen compounds such as Zn 2 SnC> 4, Cd SnO 3, Zn SnO 3, Mgln 204, GalnO 3, ⁇ 5 or I 4 Sn 30/2 or mixtures of different transparent conductive oxides also belong to the group of TCOs.
  • the TCOs do not necessarily correspond to a stoichiometric composition and may also be p-doped or n-doped.
  • the first electrode 204 can be used as an anode, ie as a hole-injecting material
  • Electrode 204 may be formed from a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa.
  • An example is one
  • ITO indium tin oxide
  • the first electrode 204 may comprise a metal (eg, Ag, Pt, Au, Mg) or a metal
  • Metal alloy of the described materials ⁇ for example, an AgMg alloy) have.
  • the first electrode 204 may comprise AlZnO or similar materials. In various embodiments, the first
  • Electrode 204 comprise a metal which can serve, for example, as a cathode material, ie as an electron-injecting material.
  • a cathode material may include, for example, Al, Ba, In, Ag, Au, Mg, Ca or Li and
  • the first electrode 204 (in particular first metal electrode 204) may, for example, have a layer thickness of less than or equal to approximately 25 nm, for example a layer thickness of less than or equal to approximately 20 nm, for example a layer thickness of less than or equal to approximately 18 nm. Furthermore, the first electrode 204 may, for example, have a layer thickness of greater than or equal to approximately 10 nm, for example one
  • the first electrode 204 may have a layer thickness in a range of about 10 nm to about 25 nm, for example, a layer thickness in a range of about 10 nm to about 18 nm,
  • the first electrode 204 may, for example, have a layer thickness of greater than or equal to approximately 40 nm, for example a layer thickness of greater than or equal to approximately 50 nm.
  • the optoelectronic component 200 may comprise an organic functional layer structure 206 applied to or over the first electrode 204.
  • the organic functional layer structure 206 may include one or more emitter layers 208, for example, with
  • fluorescent and / or phosphorescent emitters as well as one or more hole-line layers 210.
  • organometallic compounds such as derivatives of polyfluorene, polythiophene and polyphenylene (for example 2- or 2,5-substituted poly-p-phenylenevinylene) and metal complexes, for example iridium complexes such as blue-phosphorescent FIrPic (bis (3,5-difluoro-2- ⁇ 2-pyridyl) phenyl- (2-carboxypyridyl) iridium III), green phosphorescent
  • non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, can
  • Polymer emitters are used, which in particular by wet chemical methods, such as spin coating, are deposited.
  • the emitter materials may be suitably embedded in a matrix material.
  • Optoelectronic component 200 may be selected, for example, such that the optoelectronic component 200 emits white light.
  • the emitter layer (s) 208 may include a plurality of emitter materials of different colors (for example blue and yellow or blue, green and red)
  • the emitter layer (s) 208 may be constructed of multiple sublayers, such as a blue fluorescent emitter layer 208 or blue
  • the emission of light can result in a white color impression.
  • a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that from a (not yet white) primary radiation through the
  • the organic functional layer structure 206 may generally include one or more functional layers.
  • the one or more functional layers may or may comprise organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules, or combinations of these materials
  • Layer structure 206 one or more functional
  • Material for the hole transport layer 210 can be any material for the hole transport layer 210 .
  • tertiary amines for example, tertiary amines, carbazoderivate, conductive polyaniline or Polythylendioxythiophen be used.
  • the one or more functional layers may or may be considered
  • the electroluminescent layer may be carried out electroluminescent layer.
  • the electroluminescent layer may be carried out electroluminescent layer.
  • Hole transport layer 210 may be deposited on or over the first electrode 204, for example, deposited, and the emitter layer 208 may be on or above the
  • Hole transport layer 210 applied, for example
  • the optoelectronic component 200 may generally have further organic functional layers which serve to further improve the functionality and thus the efficiency of the optoelectronic component 200.
  • the optoelectronic component 200 can be embodied as a "bottom emitter” and / or "top emitter”.
  • the organic functional layer structure 206 may have a layer thickness
  • the organic functional has a maximum of about 1.5 ⁇ , for example, a layer thickness of at most about 1.2 ⁇ , for example, a layer thickness of at most about 1 ⁇ , for example, a layer thickness of about 800 nm, for example, a layer thickness of about 500 nm, for example, a layer thickness of a maximum of about 400 nm, for example a layer thickness of at most about 300 nm.
  • the organic functional has a maximum of about 1.5 ⁇ , for example, a layer thickness of at most about 1.2 ⁇ , for example, a layer thickness of at most about 1 ⁇ , for example, a layer thickness of about 800 nm, for example, a layer thickness of about 500 nm, for example, a layer thickness of a maximum of about 400 nm, for example a layer thickness of at most about 300 nm.
  • the organic functional for example, a layer thickness of at most about 1.2 ⁇ , for example, a layer thickness of at most about 1 ⁇ , for example, a layer
  • Layer structure 206 for example, a stack of
  • each OLED may have a layer thickness of at most about 1, 5 ⁇ , for example one
  • Layer thickness of at most about 1, 2 ⁇ for example, a layer thickness of at most about 1 ⁇ , for example, a layer thickness of about 800 nm, for example, a layer thickness of about 500 nm, for example, a layer thickness of about 400 nm, for example, a layer thickness of at most about 300 nm.
  • the organic functional for example, a layer thickness of at most about 1, 2 ⁇ , for example, a layer thickness of at most about 1 ⁇ , for example, a layer thickness of about 800 nm, for example, a layer thickness of about 500 nm, for example, a layer thickness of about 400 nm, for example, a layer thickness of at most about 300 nm.
  • the organic functionalities for example, a layer thickness of at most about 1 ⁇ , for example, a layer thickness of about 800 nm, for example, a layer thickness of about 500 nm, for example, a layer thickness of about 400 nm, for example, a layer thickness of at most about 300 n
  • Layer structure 206 for example, have a stack of three or four directly superimposed OLEDs, in which case, for example, the organic functional layer structure 206 may have a layer thickness of at most about 3 ⁇ .
  • a second electrode 212 (for example in the form of a second electrode layer 212) may be applied.
  • the second electrode 212 may be applied on or above the organic functional layer structure 206.
  • Electrode 212 have the same materials or be formed therefrom as the first electrode 20, wherein in various embodiments metals are particularly suitable.
  • Electrode 212 for example, have a layer thickness of less than or equal to approximately 50 nm, for example a layer thickness of less than or equal to approximately 45 nm, for example a layer thickness of less than or equal to approximately 40 nm, for example a layer thickness of less than or equal to approximately 35 nm, for example a layer thickness of less than or equal to about 30 nm, for example a layer thickness of less than or equal to about 25 nm, for example a layer thickness of less than or equal to about 20 nm, for example a layer thickness of less than or equal to about 15 nm, for example a layer thickness of less than or equal to about 10 nm.
  • the second electrode 212 may have an arbitrarily greater layer thickness. As shown in Figure 2, is for decoupling of
  • Glass substrate) 202 at at least one predetermined position (or at a plurality of predetermined positions) (respectively) a local variation structure of the material of the substrate 202 is provided.
  • the local change structure (s) is or are formed in the form of an engraving, for example in the form of a substrate TM interior engraving.
  • the local change structure (s) is or are formed in the form of a non-periodic structure. This local
  • Modification structures scatter the light generated, for example, by the emitter layer 208, which is guided into the substrate 202.
  • An advantage of this embodiment is that the surface of the substrate 202 (for example, the
  • the one or more local change structures may or may be at predetermined or predefined positions within the substrate 202 (in the embodiments described below
  • the one or more local change structure (s) may all be the same size or different sizes.
  • Arranging multiple local change structures in one or more layers can be random, otherwise
  • Change structures a local deterministic structure, such as a lens structure, are formed in one or more layers.
  • Change structures are arranged in a non-periodic pattern. If the local change structures have a size of at least 1 ⁇ , then it is in
  • the local change structures are arranged in a periodic pattern. However, it should be noted that even if the local change structures have a size of at least 1 ⁇ , the local ones
  • the organic light emitting diode 200 may be formed as a bottom emitter or as a top and bottom emitter or become.
  • 3 shows an organic light emitting diode 300 as a
  • the organic light emitting diode 300 is formed as a top emitter. Furthermore, the organic light emitting diode 300 has a cover layer 302, for example made of glass or another suitable material, such as one of the following materials: quartz, a semiconductor material, a
  • Plastic film or a laminate with one or more plastic films can be one or more
  • Polyolefin for example, polyethylene (PE) high or low density or polypropylene (PP) or be formed therefrom. Furthermore, the plastic
  • Polyvinyl chloride PVC
  • PS polystyrene
  • PC polycarbonate
  • PET polyethylene terephthalate
  • the cover layer 302 may be translucent, for example, transparent, partially
  • the cover layer 302 may have a layer thickness in a range of about 1 ⁇ to about 50 ⁇ , for example in a range of about 5 ⁇ to about 40 ⁇ , for example in a range of about 10 ⁇ to about 25 ⁇ .
  • one or more local variation structures are / are in the organic light emitting diode 300 according to FIG. 3, one or more local variation structures are / are in the organic light emitting diode 300
  • Cover layer 302 is provided and form there scattering centers, such as they have been described by way of example above in connection with FIG.
  • the light extraction can be improved by, for example, the cover layer 302
  • FIG. 1 shows an organic light emitting diode 400 as one
  • the organic light-emitting diode 400 according to FIG. 4 is designed as a top and bottom emitter and has both in the substrate 202 and in the cover layer 302 in each case one or more local variation structure (s) 402, 404, as they do
  • an organic light-emitting diode eg organic light-emitting diode 500
  • the first electrode 204 for example, the anode
  • a transparent, high refractive index layer 502 for example, silicon nitride and / or titanium oxide
  • Change structure (s) may be provided in the transparent, high refractive layer 502 (or in the stack 502 of multiple transparent, high refractive layers).
  • the transparent, high-index layer 502 or the stack 502 of several transparent,
  • Layer structure 206 coming light can in the
  • transparent, high refractive layer 502 (or in the stack 502 of several transparent, high refractive layers)
  • the engraving in general, the one or more local (s) change structure (s) also at the Interface between first electrode (anode) 204 /
  • the light is also scattered.
  • the transparent, high refractive index layer 502 may have a layer thickness in a range from about 1 ⁇ m to 50 ⁇ m, for example in a range from about 5 ⁇ m to about 40 ⁇ m,
  • organic light emitting diode 500 according to Figure 5 substantially equal to the organic light emitting diode 200 according to Figure 2, with only one or more additional layers between the
  • Substrate 202 and the first electrode 204 namely
  • the transparent, high refractive index layer 502 for example, with the transparent, high refractive index layer 502 (or the stack 502 of several transparent,
  • the substrate is provided with one or more local change structure (s), but the transparent, high refractive layer 502 (or the stack 502 of several transparent, high refractive layers) (in FIG. 5 labeled 504).
  • the interface 602 may be between the first electrode 204 (e.g., anode) and the first electrode 204
  • Light-emitting diode 600 in Figure 6 denoted by reference numeral 604) or be provided, for example with a
  • Internal engraving for example an internal laser engraving, to produce the light scattering at this interface 602.
  • the transition between the substrate 202 and the transparent anode 204 is engraved inside, around the high refractive index interface 602
  • substrate 202 ⁇ to structure so that the light can be scattered there.
  • one or more local (s) may be provided (e.g., anode) and the substrate 202.
  • Change structure (s) may also be provided in the substrate 202.
  • FIG. 7 also shows an organic light-emitting diode 700 according to various exemplary embodiments. In these embodiments, it may be provided that in a case of a top emi ierenden organic light emitting diode 700 or a transparent organic light emitting diode a
  • transparent second electrode eg, cathode
  • organic functional layer structure can not be penetrated by these substances.
  • the one or more local variation structures are contained only in or also in the thin-film encapsulation layer 702.
  • Thin-film encapsulation layer 702 comprises or consists of one or more of the following materials: a material or a mixture of materials or a stack of layers of materials such as Si0 2 S13N4, -SiON (these materials are deposited, for example, by a CVD process); A1 2 0 3 ; Zr0 2 ; Ti0 2 ; Ta 2 0 5 ; Si0 2 ; ZnO; and / or Hf0 2 (these materials are deposited, for example, by an ALD method); or one
  • FIG. 8 also shows an organic light-emitting diode 800 according to various exemplary embodiments.
  • the first (in this case transparent) electrode 204 is or is provided with one or more local variation structures (denoted by reference numeral 802 in FIG. 8). In various embodiments may also be a
  • organic light iode generally in the optoelectronic Component, be provided. It can also be provided to engrave one or more layers only to a small extent in order to increase the transparency of the optoelectronic
  • these may be particularly scattering layers, alternatively or additionally may also be three-dimensional
  • the substrate 202 or the cover layer 302 does not necessarily consist of glass. It is also possible that it consists, for example, of plastic or other translucent, for example transparent, materials or has such.
  • the substrate modes and / or the modes of the other layers such as the modes of the first electrode
  • the engraving may approach the interfaces of a layer by up to several nm
  • FIG. 9 shows a flowchart 900, in which a method for producing an optoelectronic component according to various exemplary embodiments is shown.
  • Electrode layer are formed. Further, in 904, a second electrode layer may be formed on or over the organic functional layer structure. Finally, in 906 at least one of the layers of the
  • the local change structure can be determined by means of local
  • Daming the material structure of the respective layer are formed, for example by locally heating the material such that it to one, for example
  • a laser can be used, which generates and emits light of a wavelength at which the layer to be engraved is transparent.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention, selon différents exemples de réalisation, concerne un procédé (900) de fabrication d'un composant optoélectronique (200). Le procédé (900) peut comprendre les étapes consistant à : former (902) une structure fonctionnelle organique stratifiée (206) sur ou au-dessus d'une première couche d'électrode (204) ; former (904) une deuxième couche d'électrode (214) sur ou au-dessus de la structure fonctionnelle organique stratifiée (206) ; et former (906) dans au moins l'une des couches du composant optoélectronique (200), à au moins une position prédéterminée, une structure locale de modification (214) du matériau de la couche considérée.
EP11796700.0A 2010-12-20 2011-12-14 Procédé de fabrication d'un composant optoélectronique et composant optoélectronique Withdrawn EP2656403A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010063511A DE102010063511A1 (de) 2010-12-20 2010-12-20 Verfahren zum Herstellen eines optoelektrischen Bauelements und optoelektronisches Bauelement
PCT/EP2011/072710 WO2012084630A1 (fr) 2010-12-20 2011-12-14 Procédé de fabrication d'un composant optoélectronique et composant optoélectronique

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EP2656403A1 true EP2656403A1 (fr) 2013-10-30

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US (1) US20130270542A1 (fr)
EP (1) EP2656403A1 (fr)
JP (1) JP2014503966A (fr)
KR (1) KR20130119462A (fr)
CN (1) CN103262271A (fr)
DE (1) DE102010063511A1 (fr)
WO (1) WO2012084630A1 (fr)

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DE102012109209B4 (de) * 2012-09-28 2017-05-11 Osram Oled Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
KR102013316B1 (ko) * 2012-11-20 2019-08-23 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
KR102222215B1 (ko) 2013-05-15 2021-03-03 루미리즈 홀딩 비.브이. 기판내에 산란 특징을 갖는 led

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004061995A1 (fr) * 2002-12-19 2004-07-22 3M Innovative Properties Company Formation de motifs au laser pour diodes electroluminescentes organiques encapsulees
WO2004100616A1 (fr) * 2003-05-12 2004-11-18 Schreiner Group Gmbh & Co. Kg Procede de traitement d'un element electroluminescent et element electroluminescent traite selon ce procede

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10236854B4 (de) * 2002-08-07 2004-09-23 Samsung SDI Co., Ltd., Suwon Verfahren und Vorrichtung zur Strukturierung von Elektroden von organischen lichtemittierenden Elementen
JP2005038681A (ja) * 2003-07-18 2005-02-10 Toyota Industries Corp ボトムエミッション型発光素子形成用の透明基板及び当該透明基板を用いた発光デバイス
KR100543005B1 (ko) * 2003-09-18 2006-01-20 삼성에스디아이 주식회사 능동 매트릭스 유기전계발광표시장치
ES2380972T3 (es) * 2004-03-26 2012-05-22 Rohm Co., Ltd. Elemento orgánico emisor de luz
US7122489B2 (en) * 2004-05-12 2006-10-17 Matsushita Electric Industrial Co., Ltd. Manufacturing method of composite sheet material using ultrafast laser pulses
CN101213682B (zh) * 2005-06-30 2011-08-03 皇家飞利浦电子股份有限公司 用于在有机功能设备中形成电极层图案的方法
US7537504B2 (en) * 2005-12-06 2009-05-26 Corning Incorporated Method of encapsulating a display element with frit wall and laser beam
JP2009027036A (ja) * 2007-07-20 2009-02-05 Fujifilm Corp 表示装置及び欠陥画素のリペア方法
US20090130427A1 (en) * 2007-10-22 2009-05-21 The Regents Of The University Of California Nanomaterial facilitated laser transfer
DE102008021658A1 (de) * 2008-04-30 2009-11-05 Ledon Lighting Jennersdorf Gmbh Lichtemittierende Vorrichtung mit Volumenstrukturierung
KR100993088B1 (ko) * 2008-07-22 2010-11-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
GB2462806A (en) * 2008-08-14 2010-02-24 Glory Science Co Ltd Light emitting device intensity correction
DE102009010000A1 (de) * 2009-02-23 2010-08-26 Korecki, Daniela Lichtmodul
CN101882667B (zh) * 2009-07-16 2015-07-15 清华大学 一种有机电致发光器件
ES2346843B2 (es) * 2010-02-25 2012-02-23 Universidad Politecnica De Madrid Procedimiento de ablacion por electroerosion del anodo y del catodo de los diodos luminiscentes de compuestos organicos oleds para la fabricacion de pantallas.

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004061995A1 (fr) * 2002-12-19 2004-07-22 3M Innovative Properties Company Formation de motifs au laser pour diodes electroluminescentes organiques encapsulees
WO2004100616A1 (fr) * 2003-05-12 2004-11-18 Schreiner Group Gmbh & Co. Kg Procede de traitement d'un element electroluminescent et element electroluminescent traite selon ce procede

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2012084630A1 *

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DE102010063511A1 (de) 2012-06-21
JP2014503966A (ja) 2014-02-13
US20130270542A1 (en) 2013-10-17
WO2012084630A1 (fr) 2012-06-28
KR20130119462A (ko) 2013-10-31

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