EP2652784A2 - Ensemble électronique doté d'une liaison par frittage améliorée - Google Patents

Ensemble électronique doté d'une liaison par frittage améliorée

Info

Publication number
EP2652784A2
EP2652784A2 EP11788397.5A EP11788397A EP2652784A2 EP 2652784 A2 EP2652784 A2 EP 2652784A2 EP 11788397 A EP11788397 A EP 11788397A EP 2652784 A2 EP2652784 A2 EP 2652784A2
Authority
EP
European Patent Office
Prior art keywords
assembly according
recesses
connection
sintered
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP11788397.5A
Other languages
German (de)
English (en)
Inventor
Daniel Wolde-Giorgis
Thomas Kalich
Erik Sueske
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP2652784A2 publication Critical patent/EP2652784A2/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H10W70/417—Bonding materials between chips and die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07352—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07354—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/322—Multilayered die-attach connectors, e.g. a coating on a top surface of a core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/331—Shapes of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/331—Shapes of die-attach connectors
    • H10W72/332—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/331—Shapes of die-attach connectors
    • H10W72/334—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/341—Dispositions of die-attach connectors, e.g. layouts
    • H10W72/342—Dispositions of die-attach connectors, e.g. layouts relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/341—Dispositions of die-attach connectors, e.g. layouts
    • H10W72/347—Dispositions of multiple die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors

Definitions

  • the present invention relates to an electronic assembly having an improved sintered connection between a base part, e.g. a substrate, and an electronic component, e.g. a chip.
  • Embodiments used for a variety of purposes a wide variety of electronic components on a base part, e.g. Substrate or the like, to be fixed. It is known that the electronic components are fixed to the substrate, for example by means of soldering. It is also known to attach electronic components by means of a sintered connection on a substrate.
  • EP 0275433 B1 proposes that metal powder is introduced between an electronic component and a substrate in the form of a pre-sintered film before the sintering process. at
  • Claim 1 has the advantage that a reliability and life of the assembly with a base part, e.g. a substrate, and electronic components sintered thereto can be significantly increased.
  • the mechanical stress peaks acting on the electronic component are reduced by a geometric change at the joint between the sintered connection and the electronic component. This is inventively achieved in that a
  • Component edge remains at least partially free of the sintered connection.
  • Thermal shock resistance of the electronic assembly can be achieved.
  • the at least partially releasing the component edge of the sintered material allows a geometrically smooth transition from the sintered layer to the electronic component. There will also be a smooth transition between
  • the sintered connection comprises an edge region with a plurality of recesses which are designed to be open to an outside of the sintered connection.
  • the sintered compound has a stamp form.
  • the sintered connection comprises a plurality of circumferentially
  • closed recesses which are provided with an edge distance along an edge region of the sintered connection.
  • the open or closed recesses in the sintered connection are preferably uniform over the entire edge circumference of the
  • a form of the open and / or closed recesses is preferably semicircular or circular.
  • the shape may also be semi-oval or oval-shaped or rectangular or triangular.
  • each adjacent recesses have a distance of 50 to 300 ⁇ , preferably 100 to 250 ⁇ , more preferably 150 to 200 ⁇ and more preferably about 175 ⁇ on.
  • the recesses are semicircular or circular, the recesses preferably have a diameter of about 300 to 700 ⁇ , preferably 400 to 600 ⁇ and more preferably about 500 ⁇ .
  • Sinter connection does not reach the component edge, but ends with a certain distance in front of it.
  • the distance to the component edge is preferably equal to a dimension of the recesses in the sintered connection, e.g. the diameter.
  • the return ensures that the sintered connection does not interfere with the
  • the recess preferably has a length from the outer edge to the inside, which is equal to or greater than a height of the sintered connection and / or which is equal to or smaller than a thickness of the sintered connection.
  • the return is about 100 ⁇ .
  • At least one recess is provided in the base part, wherein the sintered connection up to reaches an edge of the recess and the electronic component projects beyond the sintered connection.
  • Sinter connection can be provided simply and flatly without recess and still a reduced voltage introduction can be achieved with temperature changes to the electronic component.
  • a component edge of the electronic component is preferably arranged such that the component edge is arranged above the recess in the base part.
  • a plurality of recesses are arranged in the base part, which are arranged adjacent to each other according to the shape of the component.
  • the plurality of recesses thus form approximately a projection of the electronic component on the base part.
  • the shape of the recesses may be circular, semicircular, oval, semi-oval or quadrangular.
  • four trenches could for example also be provided along the component edges in the case of a quadrangular electronic component, or alternatively a completely circumferential trench could be provided in the base part.
  • the sintered compound additionally comprises a planar intermediate element, which has very good electrically and thermally conductive properties, wherein sintered material is provided on both sides of the surface intermediate element.
  • the planar intermediate element is, for example, a metal foil, in particular a silver foil.
  • the planar intermediate element has an edge region with open recesses (stamp form) and / or the intermediate element comprises a multiplicity of circumferentially closed ones
  • the sintered compound comprises silver.
  • the starting material for the sintered compound is preferably a paste comprising metal colloids and stabilizing components.
  • the stabilizing constituents are then burned out with application of temperature, so that the metal colloids come into direct contact with one another and with the material of the adjacent joining partners.
  • the material of the joining partners is on the one hand preferably a component, for example silicon, and the material of the other joining partner is preferably a metal, in particular copper or copper alloys. According to the invention, it is thus prevented that a sintered connection runs along an entire circumference of a component edge of an electronic component.
  • the sintered compound for example, a
  • Stamp structure as an edge region or a hole structure near the edge region, wherein the component edge is above the hole structure. Further alternatively, a return can be provided in the sintered connection to the electronic component.
  • the invention can be used in all electronic assemblies, which electronic components on a base by means of
  • Rectifier diode in which a silicon chip is fixed on a copper substrate by means of sintering.
  • a base part in addition to substrates and a stamped grid can be used.
  • Figure 1 is a schematic sectional view of an electronic
  • Figure 2 is a schematic plan view of that shown in Figure 1
  • FIG. 3 shows an enlarged partial sectional view of the sintered connection of FIG. 2
  • FIG. 4 shows a schematic plan view of a sintered connection according to a second exemplary embodiment of the invention
  • FIG. 5 shows an enlarged partial sectional view of the sintered connection of FIG
  • FIG. 6 shows a schematic view of an electronic assembly according to a third exemplary embodiment of the invention
  • Figure 7 is a schematic sectional view of an electronic
  • Figure 9 is a schematic sectional view of an electronic circuit
  • FIG. 10 is a schematic plan view of the assembly of FIG. 9.
  • the electronic subassembly 1 of the first exemplary embodiment comprises a substrate as base part 2 as well as an electronic component 3, e.g. a chip. Between the base part 2 and the electronic component 3, e.g. a chip. Between the base part 2 and the electronic component 3, e.g. a chip.
  • a sintered connection 4 is formed.
  • the sintered connection 4 is shown in detail in FIGS. 2 and 3.
  • the sintered connection 4 has an edge region 42 with a plurality of recesses 5, so that the edge region of the sintered connection 4 has a stamp structure.
  • the recesses 5 are in this embodiment, outwardly open recesses, which are uniform along the edge circumference of
  • the recesses 5 have a Semicircular shape with a diameter 41 on.
  • the diameter 41 is preferably in a range of 300 to 700 ⁇ .
  • a straight part of the outer edge region 42 is provided between respectively adjacent open recesses 5.
  • the rectilinear portion has a length 43, which is preferably between 50 to 300 ⁇ . The length 43 of the rectilinear portion is at most equal to the length of a maximum diameter of the recesses 5
  • Edge region 42 can be arranged. As can further be seen from FIG. 1, the recesses 5 are formed through the entire thickness 40 of the sintered connection 4.
  • a distance 31 of a component edge 30 of the electronic component 3 is smaller than the thickness 40 of FIG.
  • the distance 31 preferably corresponds to half the diameter of the recesses. 5
  • the transition is made geometrically gentler by the provision of the plurality of identical recesses 5, so that no local voltage peaks, in particular on the electronic component 3, can occur.
  • the sintered connection comprises silver in order to establish an electrical contact between the base part 2 and the electronic component 3.
  • the sintered joint 4 may also be formed such that the rectilinear portion of the outermost edge portion 42 is directly on the component edge 30, that is, the distance 31 is zero.
  • This embodiment has the same advantages according to the invention, but is somewhat more difficult to produce, since the outermost edge region 42 must lie exactly at the component edge 30.
  • Embodiment a circumferential hole structure, in which a plurality of closed recesses 50 is provided.
  • the closed recesses 50 are uniform along the edge region 42 of
  • Adjacent recesses 50 in this case have a distance 51 which is at most as large as a
  • Diameter 41 of the closed recesses 50 Diameter 41 of the closed recesses 50.
  • a second distance 52 between the recesses 50 and the edge region 42 of the sintered connection 4 is smaller than the diameter 41 of the closed recess 50, but larger than the distance 51 between two adjacent recesses 50th
  • the sintered connection 4 can be arranged at a not shown electronic component 3, as shown in the first embodiment, with a distance 31 between the component edge and the outermost edge region 42.
  • the component edge 30 can also lie over the closed recesses 50, preferably the component edge lies exactly on the midpoints M of the closed recesses 50.
  • FIG. 6 shows an electronic assembly 1 according to a third embodiment
  • the electronic component 3 has a double-sided, sintered connection, each with a sintered connection 4, 4 on a surface of the electronic component 3.
  • the sintered connections 4, 4 of the third exemplary embodiment have the circumferential hole structure with closed recesses 50 shown in FIG.
  • the sintered connections 4 are at a distance 31 from the
  • Component edge 30 reset.
  • the two sintered connections 4 are the same. It should, however, be noted that different sintered connections may also be provided, such as the sintered connection with open recesses 5 shown in the first exemplary embodiment.
  • FIGS. 7 and 8 show an electronic subassembly 1 according to a fourth exemplary embodiment of the invention, again having identical or functionally identical parts with the same reference numerals as in the first embodiment Embodiment are designated.
  • a two-sided sintered connection of the electronic component 3 is provided in the fourth embodiment.
  • the sintered connection 4, 4 in this case has a circumferential recess 45, which from an outermost
  • Edge region 42 is set back by a length 46.
  • the recess 45 has a height 47 which is smaller than half the thickness 40 of the sintered connection 4.
  • the sintered connection 4 of the fourth embodiment has a step-shaped edge shape, wherein by the recess 45, the
  • Component edge 30 is free.
  • the outermost edge region 42 lies at a height with an end face 3a of the electronic component 3.
  • the height 47 of the recess 45 is at least 30 ⁇ .
  • the depth 46 of the recess 45 is between 200 and 700 ⁇ .
  • the electronic module 1 of the fifth exemplary embodiment has recesses 6 in the base part 2.
  • a multiplicity of circular recesses 6 are provided in the base part 2 along the circumference of the electronic component 3.
  • the sintered connection 4 extends to the edge of the recesses 6.
  • the component edge 30 lies on the midpoints M of the circular recesses 6. Otherwise, this corresponds
  • Sinter connections 4 both on one side of an electronic component 3 or on two sides, as described in the third and fourth embodiments, may be provided. Also, any combinations of the disclosed sintered connections 4 in a two-sided arrangement are possible. Furthermore, it is possible that in all the described embodiments additionally a metallic foil as an intermediate element in the sintered connection. 4 is introduced, wherein the sintered connection is then provided on both sides of the metallic foil. Preferably, in all of the described embodiments, sintered connections are used which comprise silver and can be applied in paste form.

Landscapes

  • Thermistors And Varistors (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

La présente invention concerne un ensemble électronique, comprenant un élément de base (2), notamment un substrat, au moins un composant électronique (3), au moins une puce qui est disposée sur l'élément de base (2), et une liaison par frittage (4) qui relie le composant électronique (3) à l'élément de base (2), la liaison par frittage (4) étant conçue plate entre l'élément de base (2) et le composant électronique (3), et un bord (3) du composant étant au moins partiellement exempt de liaison par frittage (4).
EP11788397.5A 2010-12-14 2011-11-08 Ensemble électronique doté d'une liaison par frittage améliorée Ceased EP2652784A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010063021A DE102010063021A1 (de) 2010-12-14 2010-12-14 Elektronische Baugruppe mit verbesserter Sinterverbindung
PCT/EP2011/069662 WO2012079855A2 (fr) 2010-12-14 2011-11-08 Ensemble électronique doté d'une liaison par frittage améliorée

Publications (1)

Publication Number Publication Date
EP2652784A2 true EP2652784A2 (fr) 2013-10-23

Family

ID=45047735

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11788397.5A Ceased EP2652784A2 (fr) 2010-12-14 2011-11-08 Ensemble électronique doté d'une liaison par frittage améliorée

Country Status (3)

Country Link
EP (1) EP2652784A2 (fr)
DE (1) DE102010063021A1 (fr)
WO (1) WO2012079855A2 (fr)

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WO2014129626A1 (fr) * 2013-02-22 2014-08-28 古河電気工業株式会社 Structure de raccordement et dispositif à semi-conducteur
DE102014217938B4 (de) 2014-09-08 2022-11-03 Robert Bosch Gmbh Elektronisches Bauelement
CN112135891B (zh) 2018-05-16 2022-07-12 迪傲公司 用于裂化工艺流体中的碳氢化合物的涡轮机化学反应器及方法
EP3618586A1 (fr) * 2018-08-31 2020-03-04 Siemens Aktiengesellschaft Support de circuit doté d'un emplacement de montage pour composants électroniques, circuits électroniques et procédé de fabrication
EP3618585A1 (fr) * 2018-08-31 2020-03-04 Siemens Aktiengesellschaft Support de circuit doté d'un emplacement de montage pour composants électroniques, circuits électroniques et procédé de fabrication
US11123702B2 (en) 2018-09-20 2021-09-21 Dresser-Rand Company Turbomachine type chemical reactor

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WO2012079855A2 (fr) 2012-06-21
WO2012079855A3 (fr) 2012-09-20

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