EP2639838B1 - Photosensing transistor for optical touch screen device and method of manufacturing the photosensing transistor - Google Patents

Photosensing transistor for optical touch screen device and method of manufacturing the photosensing transistor Download PDF

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Publication number
EP2639838B1
EP2639838B1 EP12191754.6A EP12191754A EP2639838B1 EP 2639838 B1 EP2639838 B1 EP 2639838B1 EP 12191754 A EP12191754 A EP 12191754A EP 2639838 B1 EP2639838 B1 EP 2639838B1
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Prior art keywords
layer
etch stop
drain
source
channel layer
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German (de)
English (en)
French (fr)
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EP2639838A3 (en
EP2639838A2 (en
Inventor
Sang-Hun Jeon
I-Hun Song
Seung-Eon Ahn
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
    • G06F3/0421—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means by interrupting or reflecting a light beam, e.g. optical touch-screen
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/4473—Phototransistor
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04109—FTIR in optical digitiser, i.e. touch detection by frustrating the total internal reflection within an optical waveguide due to changes of optical properties or deformation at the touch location

Definitions

  • Example embodiments relate to photosensing transistors, methods of manufacturing the same, and display panels employing a photosensing transistor.
  • Thin film transistors are widely used in a variety of fields, in particular, as a switching and driving device in a display field. Recently, using a thin film transistor as a photosensing element for an optical touch screen device has been suggested.
  • a touch screen device is a device for directly inputting data on a screen. In other words, when a user's finger, or a stylus (e.g., pen), touches a particular location on a display screen of a touch screen device, a set process is performed using software.
  • An optical touch screen device is a device that performs the same function as a conventional touch screen by sensing light instead of contact by a finger or a pen.
  • the optical touch screen device is expected to be useful not only for communications between a user and a terminal but also for communication between users.
  • a photosensing transistor When a photosensing transistor is used in an optical touch screen device and a liquid crystal panel is used as a display panel, input light passes through a polarization film and is incident on a photosensing transistor. A light loss occurs while the light passes through the polarization film. Also, a degree of light loss varies according to an incident angle. Photocurrent is reduced by about 10% with respect to a particular incident angle so that a photosensing transistor may not react to incident light. Thus, there is a demand to study about a solution to improve photosensing efficiency.
  • JP S61 79267 discloses a photosensitive element, comprising: a gate layer, a gate insulation layer on the gate layer, a channel layer on the gate insulation layer, and a light-shielding insulating film located on a partial area of the channel layer and which is interposed between a source and a drain.
  • the source is separated from the light-shielding insulating film and the drain overlaps the light-shielding insulating film.
  • Example embodiments relate to photosensing transistors, methods of manufacturing the same, and display panels employing a photosensing transistor.
  • a photosensing transistor having a structure in which a channel layer of the photosensing transistor may be efficiently exposed to light a method of manufacturing the same, and an optical touch display panel employing the photosensing transistor.
  • the photosensing transistor of the present invention includes a gate layer; a gate insulation layer on the gate layer; a channel layer on the gate insulation layer; an etch stop layer on a partial area of the channel layer; a source and a drain on the channel layer and separated from each other, wherein the etch stop layer is interposed between the source and the drain, and wherein the source and the drain are separated from the etch stop layer.
  • a region of the channel layer corresponding to a space between the source and the etch stop layer and a region of the channel layer corresponding to a space between the drain and the etch stop layer have a conductivity higher than any other region of the channel layer.
  • a passivation layer covers the source, the drain and the etch stop layer, with said passivation layer directly contacting said regions of the channel layer.
  • the source and the drain may be formed of a transparent electrode material.
  • the source and the drain may be formed of a metal material.
  • the drain is separated from the etch stop layer.
  • the source and the drain may be formed of a transparent electrode material.
  • the source and the drain may be formed of a metal material.
  • the channel layer may be formed of an oxide including at least one selected from indium (In), gallium (Ga), zinc (Zn), aluminum (Al) and a combination thereof.
  • the channel layer may be formed of a semiconductor material.
  • an optical touch display panel includes a display cell configured to be controlled between an on state and an off state according to image information, and the photosensing transistor described above, wherein the photosensing transistor is configured to sense incident light.
  • the drain is separated from the etch stop layer.
  • the source and the drain may be formed of a transparent electrode material.
  • the source and the drain may be formed of a metal material.
  • the display cell may include a liquid crystal material.
  • a method of manufacturing the photosensing transistor of the present invention includes sequentially forming a gate insulation layer and a channel layer formed of a semiconductor material on a gate layer, forming an etch stop layer in a partial area of the channel layer, forming a conductive material layer to entirely cover the channel layer and the etch stop layer, etching a partial area of the conductive material layer to expose the etch stop layer, wherein the conductive material layer is separated into a source and a drain, and the source and the drain are formed separated from the etch stop layer, and forming a passivation layer to cover the source, the drain and the etch stop layer, with said passivation layer directly contacting a region of the channel layer corresponding to a space between the source and the etch stop layer and a region of the channel layer corresponding to a space between the drain and the etch stop layer.
  • the conductive material layer may be formed of a transparent electrode material.
  • the conductive material layer may be formed of a metal material.
  • the channel layer may be formed of an oxide including at least one selected from indium (In), gallium (Ga), zinc (Zn), aluminum (Al) and a combination thereof.
  • the channel layer may be formed of a semiconductor material.
  • first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of example embodiments.
  • the term "and/or" includes any and all combinations of one or more of the associated listed items.
  • spatially relative terms e.g., "beneath,” “below,” “lower,” “above,” “upper” and the like
  • the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features.
  • the term “below” can encompass both an orientation that is above, as well as, below.
  • the device may be otherwise oriented (rotated 90 degrees or viewed or referenced at other orientations) and the spatially relative descriptors used herein should be interpreted accordingly.
  • Example embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures). As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, may be expected. Thus, example embodiments should not be construed as limited to the particular shapes of regions illustrated herein but may include deviations in shapes that result, for example, from manufacturing. For example, an implanted region illustrated as a rectangle may have rounded or curved features and/or a gradient (e.g., of implant concentration) at its edges rather than an abrupt change from an implanted region to a non-implanted region.
  • a gradient e.g., of implant concentration
  • a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation may take place.
  • the regions illustrated in the figures are schematic in nature and their shapes do not necessarily illustrate the actual shape of a region of a device and do not limit the scope.
  • Example embodiments relate to photosensing transistors, methods of manufacturing the same, and display panels employing a photosensing transistor.
  • FIG. 1 is a cross-sectional view schematically illustrating a structure of a photosensing transistor according to an example not being part of the present invention.
  • a photosensing transistor 100 includes a gate layer 110, a gate insulation layer 120 formed on the gate layer 110, a channel layer 130 formed on the gate insulation layer 120 and formed of a semiconductor material, an etch stop layer 140 formed in a partial area on the channel layer 130, a source 150 and a drain 160 formed separated from each other on the channel layer 130 with the etch stop layer 140 interposed therebetween, and a passivation layer 170 entirely covering the source 150, the drain 160, and the etch stop layer 140.
  • the photosensing transistor 100 includes the source 150 and the drain 160 in an asymmetrical form. In other words, when the source 150 is separated from the etch stop layer 140, the drain 160 contacts upper and lateral surfaces of the etch stop layer 140.
  • the above structure of the photosensing transistor 100 improves efficiency of sensing incident light and increases an area of the channel layer 130 to be exposed to the incident light as much as possible.
  • FIGS. 2A and 2B are a cross-sectional view of a structure of a photosensing transistor according to a comparative example which is not part of the present invention and a graph of photocurrent according to beam position, respectively.
  • a photosensing transistor 10 includes a gate 11, a gate insulation layer 12, a channel layer 13, an etch stop layer 14, a source 15, and a drain 16.
  • the source 15 and the drain 16 have a symmetrical shape and are formed in contact with the etch stop layer 14, respectively from both sides of an upper surface of the etch stop layer 14 to the opposite lateral surfaces of the etch stop layer 14.
  • incident light passes through the source 15 or the drain 16, and the etch stop layer 14 and is incident on the channel layer 13 so that a light loss occurs.
  • the subject inventors found through experiments that photocurrent varies according to a beam position. In other words, referring to FIG. 2B , the photosensing transistor 10 appears to be more sensitive to light incident on the side of the source 15.
  • the source 150 is formed separated from the etch stop layer 140 so that light may be more incident in the area of the channel layer 130 adjacent to the source 150. Details on the materials of the photosensing transistor 100 are described below.
  • the gate layer 110 may be formed of a metal material exhibiting a superior electric conductivity, for example, platinum (Pt), ruthenium (Ru), gold (Au), silver (Ag), molybdenum (Mo), aluminum (Al), tungsten (W), copper (Cu) or a combination thereof.
  • a metal material exhibiting a superior electric conductivity, for example, platinum (Pt), ruthenium (Ru), gold (Au), silver (Ag), molybdenum (Mo), aluminum (Al), tungsten (W), copper (Cu) or a combination thereof.
  • the gate insulation layer 120 may be formed of an insulation material, (e.g., silicon oxide or silicon nitride).
  • an insulation material e.g., silicon oxide or silicon nitride
  • SiO 2 or a high-K material having a higher dielectric constant than that of SiO 2 (e.g., HfO 2 , Al 2 O 3 , Si 3 N 4 , or a combination thereof), may be used for the gate insulation layer 120.
  • a dual-layer film formed of the above materials may be used for the gate insulation layer.
  • the channel layer 130 may be formed of an oxide semiconductor.
  • a transistor formed of an oxide semiconductor is widely accepted as a device having both features of an amorphous silicon thin film transistor (a-Si TFT) and a polycrystalline TFT (poly-Si TFT).
  • a-Si TFT amorphous silicon thin film transistor
  • poly-Si TFT polycrystalline TFT
  • a ZnO-based semiconductor device may be manufactured in a low-temperature process and is in an amorphous state, it is easy to make the ZnO-based semiconductor device in a large size.
  • a ZnO-based semiconductor film which is a material having a high mobility, has a very superior electric feature like poly-Si.
  • the channel layer 130 may be formed of an oxide including indium (In), gallium (Ga), zinc (Zn), aluminum (Al) or a combination thereof.
  • an oxide semiconductor material e.g., ZnO, InO, SnO, InZnO, ZnSnO, InSnO, etc.
  • a mixed material obtained by adding one or more of materials such as hafnium (Hf), zirconium (Zr), titanium (Ti), tantalum (Ta), gallium (Ga), niobium (Nb), vanadium (V), aluminum (Al), tin (Sn), etc. to the above-described oxide semiconductor material may be used for the channel layer 130.
  • the channel layer 130 may be formed as a single layer, or in a multi-layer structure, in order to improve the performance and reliability of the photosensing transistor 100.
  • the etch stop layer 140 prevents the channel layer 130 from being exposed to etching during an etching process in which a conductive material is formed on the channel layer 130 and etched to form the source 150 and the drain 160 contacting the channel layer 130, thereby preventing damage to the channel layer 130.
  • the etch stop layer 140 may be formed of, for example, silicon oxide, silicon nitride, an organic insulation material or a combination thereof.
  • the source 150 and the drain 160 may be formed of a conductive material. Also, the source 150 and the drain 160 may be formed of a transparent conductive oxide that is a transparent electrode material (e.g., indium zinc oxide (IZO), indium tin oxide (ITO) or a combination thereof) to reduce a loss of light incident on the channel layer 130.
  • a transparent conductive oxide that is a transparent electrode material (e.g., indium zinc oxide (IZO), indium tin oxide (ITO) or a combination thereof) to reduce a loss of light incident on the channel layer 130.
  • IZO indium zinc oxide
  • ITO indium tin oxide
  • the passivation layer 170 may be formed of silicon nitride or silicon oxide.
  • a region 132 of the channel layer 130 corresponding to a space between the source 150 and the etch stop layer 140 has a higher conductivity than any other region of the channel layer 130.
  • hydrogen atoms are injected into a region of the channel layer 130, the region directly contacting the passivation layer 170.
  • the hydrogen atoms supply electric charges and thus a charge concentration of a portion of the channel layer 130 where the electric charges are supplied increases so that the portion becomes a high conductive area, the region 132.
  • FIG. 3 is a cross-sectional view schematically illustrating a structure of a photosensing transistor according to an example not being part of the present invention.
  • a source 250 and a drain 260 are asymmetrically formed in a photosensing transistor 200 according to the present example.
  • the photosensing transistor 200 is different from the photosensing transistor 100 of FIG. 1 in that the source 250 and the drain 260 are formed of a metal material.
  • the source 250 and the drain 260 may be formed of a material such as platinum (Pt), ruthenium (Ru), gold (Au), silver (Ag), molybdenum (Mo), aluminum (Al), tungsten (W), copper (Cu) or a combination thereof.
  • FIG. 4 is a cross-sectional view schematically illustrating a structure of a photosensing transistor according to an embodiment of the present invention.
  • both of a source 350 and a drain 360 do not contact the etch stop layer 140 and are separated from each other. Accordingly, an area 332 corresponding to a space between the source 350 and the etch stop layer 140, and an area 334 corresponding to a space between the drain 360 and the etch stop layer 140, become regions where conductivity is higher than any other region of a channel layer. Because both of the source 350 and the drain 360 are separated from the etch stop layer 140, an exposed area of the channel layer 330 increases. Also, because the source 350 and the drain 360 are formed of a transparent conductive oxide, a light loss may be reduced.
  • FIG. 5 is a cross-sectional view schematically illustrating a structure of a photosensing transistor according to another embodiment of the present invention.
  • a photosensing transistor 400 according to said embodiment is different from the photosensing transistor 400 of FIG. 4 in that a source 450 and a drain 460 are formed of a metal material.
  • FIGS. 6A to 6G are cross-sectional views for explaining a method of manufacturing a photosensing transistor.
  • the gate insulation layer 120 and the channel layer 130 are sequentially formed on the gate layer 110.
  • the gate insulation layer 120 may be formed of a metal material exhibiting a superior electric conductivity (e.g., platinum (Pt), ruthenium (Ru), gold (Au), silver (Ag), molybdenum (Mo), aluminum (Al), tungsten (W), copper (Cu) or a combination thereof).
  • the gate insulation layer 120 may be formed of an insulation material (e.g., silicon oxide, silicon nitride or a combination thereof).
  • an insulation material e.g., silicon oxide, silicon nitride or a combination thereof.
  • SiO 2 or a high-K material having a higher dielectric constant than that of SiO 2 (e.g., HfO 2 , Al 2 O 3 , Si 3 N 4 , or a combination thereof), may be used for the gate insulation layer 120.
  • a dual-layer film formed of the above materials may be used for the gate insulation layer 120.
  • the channel layer 130 may be formed of an oxide semiconductor.
  • the channel layer 130 may be formed of an oxide including indium (In), gallium (Ga), zinc (Zn), aluminum (Al) or a combination thereof.
  • an oxide semiconductor material such as ZnO, InO, SnO, InZnO, ZnSnO, InSnO, etc. may be used for the channel layer 130.
  • a mixed material obtained by adding one or more of materials such as hafnium (Hf), zirconium (Zr), titanium (Ti), tantalum (Ta), gallium (Ga), niobium (Nb), vanadium (V), aluminum (Al), tin (Sn), etc. to the above-described oxide semiconductor material may be used for the channel layer 130.
  • the channel layer 130 is illustrated as a single layer, it is merely an example and the channel layer 130 may be formed in a multi-layer structure.
  • the etch stop layer 140 is formed in a partial area on the channel layer 130.
  • the etch stop layer 140 prevents the channel layer 130 from being exposed to etching during an etching process in which a conductive material is formed on the channel layer 130 and etched to form the source 150 and the drain 160 contacting the channel layer 130, thereby preventing damage to the channel layer 130.
  • the etch stop layer 140 may be formed of, for example, silicon oxide, silicon nitride, an organic insulation material or a combination thereof.
  • a conductive material layer CM is formed to entirely cover the channel layer 130 and the etch stop layer 140.
  • the conductive material layer CM may be formed of a transparent conductive oxide or a metal material.
  • the conductive material layer CM is etched to form the source 150 (250) and the drain 160 (260).
  • a partial area of the conductive material layer CM is etched to reveal the etch stop layer 140 so that the conductive material layer CM is divided into the source 150 (250) and the drain 160 (260). In doing so, the source 150 (250) is formed separated from the etch stop layer 140.
  • the passivation layer 170 is formed to entirely cover the source 150 (250), the drain 160 (260), and the etch stop layer 140. As a result, the photosensing transistor 100 (200) having the above-described structure as illustrated in FIG. 1 (3) is manufactured.
  • the etching process of FIG. 6D is modified to the process of FIGS. 6F and 6G in which the source 350 (450) and the drain 360 (460) are both separated from the etch stop layer 140, and the passivation layer 170 is formed to entirely cover the source 350 (450), the drain 360 (460), and the etch stop layer 140. Accordingly, the photosensing transistors 300 and 400 having the above-described structures illustrated in FIGS. 4 and 5 are manufactured.
  • the above-described photosensing transistors have high photosensing efficiency because the source/drain structure is improved so that the entire area of the channel layer may be exposed to light well.
  • the photosensing transistors may be applied to a display panel having an optical touch function.
  • FIG. 7 is a cross-sectional view schematically illustrating a structure of an optical touch display panel comprising a photosensing transistor which is not part of the present invention.
  • the optical touch display panel 500 includes a plurality of pixels, each including display cell 560 that is on/off controlled according to image information and the photosensing transistor 100 (200) for sensing incident light. In FIG. 7 , only one pixel is illustrated.
  • the optical touch display panel 500 includes a transparent rear substrate 510 and a transparent front substrate 570, arranged facing to each other, and the display cell 560 provided between the rear substrate 510 and the front substrate 570.
  • the display cell 560 may be a liquid crystal cell formed of a liquid crystal material.
  • a first alignment layer 542 and a second alignment layer 548 may be formed on lower and upper surfaces of the display cell 560, respectively, to improve an interfacial property and an alignment characteristic of liquid crystal.
  • a first polarization plate 582 and a second polarization plate584 may be arranged on a lower surface of the rear substrate 510 and an upper surface of the front substrate 570, respectively.
  • a color filter 552, a passivation layer 539, and a first transparent electrode layer 536 are sequentially formed under a lower surface of the front substrate 570.
  • the photosensing transistor 100 (200) having the structure as described with reference to FIG. 1 (2) is provided on an upper surface of the rear substrate 510.
  • the drain 160 (360) is connected to a second transparent electrode layer 533 by passing through the passivation layer 170.
  • a driving transistor for controlling on/off of the display cell 260 may be provided on the upper surface of the rear substrate 510.
  • the driving transistor may have the same structure as the photosensing transistor 100 (200), or as the photosensing transistor 10 according to the comparative example.
  • the optical touch display panel 500 employs the photosensing transistor 100 (200) having a structure in which an area of the channel layer 130 to be exposed to incident light is increased as much as possible, photosensing efficiency of the optical touch display panel 500 is high.
  • the first and second polarization plates 582 and 584 are essentially provided in the example embodiments employing the display cell 560 formed of liquid crystal. However, considering that a large amount of incident light input to the front side is lost at the second polarization plate 584, it is important to include the photosensing transistor 100 (200) having high light efficiency.
  • FIG. 8 is a cross-sectional view schematically illustrating a structure of an optical touch display panel comprising the photosensing transistor of the present invention.
  • the optical touch display panel 600 is different from the optical touch display panel 500 of FIG. 7 in that the photosensing transistor 300 (400) having the structure described with reference to FIGS. 4 and 5 is employed.

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EP12191754.6A 2012-03-13 2012-11-08 Photosensing transistor for optical touch screen device and method of manufacturing the photosensing transistor Active EP2639838B1 (en)

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KR101902929B1 (ko) 2012-07-25 2018-10-01 삼성전자주식회사 터치 패널, 터치 스크린 장치 및 이의 구동 방법
US9985139B2 (en) 2014-11-12 2018-05-29 Qualcomm Incorporated Hydrogenated p-channel metal oxide semiconductor thin film transistors
US9685542B2 (en) 2014-12-30 2017-06-20 Qualcomm Incorporated Atomic layer deposition of P-type oxide semiconductor thin films
US9647135B2 (en) 2015-01-22 2017-05-09 Snaptrack, Inc. Tin based p-type oxide semiconductor and thin film transistor applications
CN109147698B (zh) * 2018-09-12 2020-04-17 重庆惠科金渝光电科技有限公司 一种显示装置及其屏幕亮度自动调节方法
CN112086526B (zh) * 2020-09-01 2023-11-28 深圳市华星光电半导体显示技术有限公司 显示面板和显示装置
KR20210110019A (ko) 2020-02-28 2021-09-07 홍익대학교 산학협력단 광 트랜지스터용 양자점 반사 방지막, 이를 포함하는 광 트랜지스터 및 그 제조 방법

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US9209337B2 (en) 2015-12-08
US20130241881A1 (en) 2013-09-19
KR101955336B1 (ko) 2019-03-07
CN103311358B (zh) 2016-12-28
EP2639838A3 (en) 2015-07-29
EP2639838A2 (en) 2013-09-18
KR20130104290A (ko) 2013-09-25
CN103311358A (zh) 2013-09-18

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