EP2617069B1 - Nanodraht-basierte lichtemittierende vorrichtung - Google Patents

Nanodraht-basierte lichtemittierende vorrichtung Download PDF

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EP2617069B1
EP2617069B1 EP11773065.5A EP11773065A EP2617069B1 EP 2617069 B1 EP2617069 B1 EP 2617069B1 EP 11773065 A EP11773065 A EP 11773065A EP 2617069 B1 EP2617069 B1 EP 2617069B1
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nanowires
doped
area
led
nanowire
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EP2617069A1 (de
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Philippe Gilet
Anne-Laure Bavencove
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Priority claimed from FR1057330A external-priority patent/FR2964796B1/fr
Priority claimed from FR1154313A external-priority patent/FR2975532B1/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
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    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
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    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0029—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIBVI compounds
    • H—ELECTRICITY
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    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
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    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
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    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure
    • Y10S977/95—Electromagnetic energy

Definitions

  • the invention relates to optoelectronic devices based on nanowires for the production of light, in particular LEDs (light-emitting diodes).
  • planar technology is the technique currently used to produce light-emitting devices, such as LEDs, based on III-V material, and in particular III-N and II-VI, such as GaN. ZnO or GaAlAs, for example, emitting in the blue spectral range or for conversion to white light.
  • An LED in planar technology is usually produced from successive epitaxies, in particular by MOCVD (for "Metal-Organic Chemical Vapor Deposition "), layers made of semiconductor materials of the III-N family.
  • MOCVD Metal-Organic Chemical Vapor Deposition
  • FIG. 1 is a diagrammatic sectional view of a planar LED 10 of the state of the art
  • a n-doped GaN 12 layer of silicon is deposited on a sapphire substrate 14.
  • An active layer 16 consisting of multi-quantum wells formed from an alternation of unintentionally doped GaN 18 and InGaN sub-layers 20 is deposited on the n-doped GaN layer 12.
  • EBL Electron Blocking Layer
  • lower electrical contacts 26 and upper 28 are respectively formed on the layer 12 and the p-doped layer 24 for electrical connection to the LED 10.
  • planar LED based on III-N semiconductors and quantum wells suffers from limitations in terms of performance.
  • the mobility of the holes is very low compared to the mobility of the electrons, and on the other hand the holes are injected in lower concentration than the electrons because of the difficulty to activate the magnesium atoms, here the acceptors, in the p-doped GaN layer 24 and the highest resistivity of the layer 24 with respect to the layer 12.
  • the EBL layer 22 is therefore necessary in order to locate the radiative recombinations of the electron-hole pairs in the wells quantum InGaN / GaN.
  • the EBL 22 layer needs to be designed with the utmost care, especially as regards its energy bands, its hetero-epitaxial growth on a layer 16, and its composition in ternary material. Indeed, a poorly designed AlGaN layer has the effect of blocking the holes injected by the p-doped layer 24 and thus rendering the LED 10 ineffective.
  • Droop Efficiency removes the LED of many applications requiring a high current density greater than 200 A / cm 2 , such as screens or lighting.
  • the InGaN / GaN quantum wells are here replaced by a single unintentionally doped InGaN layer 32, which forms with the layers 12 and 22 a double hetero structure 34.
  • the dual hetero-structure LED 30 has an increase in efficiency for high current densities of the order of 200 A / cm 2 .
  • the increase in the volume of InGaN material, in which the recombinations of the electron-hole pairs are performed has the effect of reducing the density of the charge carriers, the main cause of Droop Efficiency. This improvement has thus been demonstrated on devices emitting around 440 nanometers with a double GaN / InGaN hetero-structure 10nm thick and containing about 14% indium.
  • double-heterostructure planar LED 30 also suffers from fundamental limitations.
  • the EBL layer 22 is necessary, and therefore poses the same problems as previously described, and that the volume of the active area 32 is reduced compared to the total volume of the LED 30.
  • the double hetero structure 34 if it actually solves problems inherent to the structure in the form of multi-quantum wells, has its own problems.
  • the double planar hetero-structure thus introduces strong antagonism between the emission wavelength of the LED and the possible current density without loss of efficiency.
  • LEDs based on InGaN / GaN nanowires also produced by epitaxial growth, in particular by MBE epitaxy (for " Molecular Beam Epitaxy ”) or by MOCVD epitaxy, are known.
  • nanowire 40 with multi-quantum well epitaxially axially.
  • the nanowire 40 is formed of a n-doped GaN zone 44 formed on an n + 42 doped silicon substrate , on which is formed an active zone 46 consisting of axial multi-quantum wells formed of alternating zones. GaN 48 and InGaN 50 zones unintentionally doped.
  • a zone 52 of GaN p-doped with magnesium is also deposited on an EBL zone 54, itself deposited on the active zone 46.
  • the electrons and the holes are injected into the active zone 46 respectively by means of the substrate 42 and the zone 52, and recombine, at least in part radiatively, in the active zone 46.
  • FIG 4 it is schematically represented in section an example of a nanowire 60 with multi-quantum wells epitaxially radially on a n + 62 doped silicon substrate.
  • the nanofil 60 comprises a core 64 made of n-doped GaN surrounded by a zone active 66 consisting of radial multiple quantum wells formed alternately GaN 68 zones and InGaN 70 zones unintentionally doped.
  • An EBL volume 74 surrounds the active zone 66, the EBL volume 74 itself being surrounded by a volume of p-doped GaN 72 by magnesium.
  • the zones 66, 74 and 72 are moreover formed on an electrical insulation layer 76.
  • the electrons and the holes are injected into the active zone 66 respectively by means of the substrate 62 and the zone 72, and recombine, at least in part radiatively, in the active zone 66.
  • the LEDs based on nanowires are less limited in terms of wavelength to be emitted than the planar LEDs because it is possible to extend the range of alloy composition constituting the active layer.
  • an EBL zone is necessary to confine carriers.
  • perfectly controlled growth in terms of morphology, composition, thickness and doping of the III-N binary and ternary semiconductors of the EBL zone is essential.
  • the active zone again has a reduced volume relative to the total volume of the nanowire, which implies a limited internal quantum efficiency.
  • the active areas of LEDs based on nanowires of the state of the art are in the form of multi-quantum wells.
  • Droop efficiency compared to the quantum multi-well planar diodes of the state of the art, the fact remains that the The presence of quantum multiwells implies a limited current density applicable to LEDs before a significant decrease in their efficiency.
  • the volume of active material of this type of LED that is to say the volume of material in which the electrons and the holes are radiatively recombined, is very small since this volume is limited to the interface of the pn junctions formed of the n-type nanowires and the p-type polymer layer.
  • the purpose of the present invention is to solve the aforementioned problems by proposing an optoelectronic device that presents all of these advantages.
  • axial injection it should be understood here that the injection of electrons into the active zone is mainly carried out according to the growth direction of the nanowire.
  • the injection of electrons is by the base of the nanowire.
  • radial injection is meant here that the injection of the holes in the active zone is the majority carried out by the lateral surface of the nanowire.
  • the hole injection zone coats the active zone at least partially over part of its height.
  • unintentionally doped is meant here a semiconductor material which has not undergone extrinsic doping and comprises at most a residual doping. This type of material is usually identified by the letter “i” as opposed to extrinsically doped materials "p" and "n".
  • p-doped and n-doped refer to extrinsic doping of semiconductor materials.
  • the fact of providing the axial injection of electrons makes it possible to release the core of the nanowire for the active zone, which then represents the bulk of the volume of the nanowire. Indeed, because of their very high mobility, the electrons occupy the entire volume of the active zone despite the reduced injection area.
  • a heterojunction is also used to spatially confine the carriers in the nanowire, which allows the improvement of the quantum efficiency of the devices.
  • a heterojunction consists in assembling side by side two materials having different bandgap widths.
  • a barrier is then constituted by the material with wide gap, or "forbidden band", of the material for the injection of the holes whereas the active zone consisting of the nanowire is in turn characterized by a gap more small.
  • the carriers injected into the nanowire are confined in the nanowire because of the presence of potential barriers.
  • the high density of carriers in the active zone thus increases their rate of radiative recombinations.
  • the nanowire thus constitutes an active volume in which the electrons and the holes are radiatively recombined.
  • the choice of the height of the nanowires in particular to obtain an appropriate current density without " Droop efficiency ", is decorated with the choice of the composition of the constituent semiconductor of the nanowire.
  • active zone for example the indium composition in the case of a GaN-based device.
  • the choice of the emission wavelength is thus wider. It is thus possible to manufacture LEDs based on nanowires emitting in the visible spectrum, in particular from red to blue in the case of a GaN-based LED, or even to produce an LED emitting a white light by varying the composition. indium during the epitaxy of the nanowire core.
  • the device according to the invention since the active zone represents the bulk of the volume of the nanowire, the device according to the invention has an improved internal quantum efficiency even at a high injection current density.
  • the active zone consists of a single semiconductor material. More particularly, the active zone consists of a type III-V or II-VI type semiconductor material, and in particular of type III-N.
  • the nanowire has a structure of the double hetero-structure type, which allows a significant improvement in the internal quantum efficiency.
  • the volume of active material is greatly increased compared to a multi-well quantum structure.
  • the active zone has a good crystalline quality, despite a large height of the active zone and / or a high In composition for example.
  • the active area consists of InGaN, while the barrier is GaN.
  • the gap of the material is of the order of 3.1 eV, while that of the GaN is equal to 3.5 eV.
  • F is the fill factor of the nanowires
  • J overflow is the maximum current density supported by the nanowires without electron saturation
  • N C is the effective state density of the conduction band of the material
  • e is the elementary charge
  • B is the bimolecular recombination coefficient of the material
  • W DH is the minimum value of the height of the active zone.
  • the minimum thickness of the active zone is 40 nanometers in order to avoid losses by overflow.
  • the nanowires are formed on a substrate of n-doped semiconductor material, and the active zone of the nanowire rests on the substrate, the substrate forming the electron injection zone.
  • the manufacture of the nanowires is therefore summarized here in the growth of the active zone on a substrate, followed by the deposition of a p-doped layer on the free ends of the nanowires.
  • the nanowire has an n-doped semiconductor base for electron injection.
  • the nanowires are formed on a substrate which comprises a continuous layer of n doped semiconductor material, of the same family as the material constituting the active zone, and on which the nanowires rest, said continuous layer forming the zone for the injection of electrons.
  • the n-doped semiconductor base of the nanowires and the n-doped continuous layer allow a wider choice of materials for the substrate.
  • the nanowires are formed on a substrate, and the p-doped zone partially surrounds the portion of the nanowires opposite to the substrate, in particular the upper part of the nanowires. More particularly, the p-doped zone encapsulates less than three quarters of the periphery of the nanowires.
  • the average optical index of the light emitting layer of the nanowire is decreased, which improves the light extraction efficiency of the device.
  • the area for the injection of holes forms a layer of planarizing material, which facilitates the subsequent deposition of an ohmic contact.
  • an LED 80 according to a first embodiment of the invention comprises an n-type silicon substrate 82, on which nanowires 84 of unintentionally doped semiconductor material of the III-V or II-VI family are formed, preferentially of the family III-N.
  • the nanowires 84 are embedded in their upper part 86 by a planarizing layer 88 made of p-doped material of the same family as that of the material of the nanowires 84, but having a higher energy gap. so as to allow the injection of holes from the layer 88 to the nanowires 84.
  • the layer 88 is further isolated from the substrate 82 to avoid a short circuit. For example, the layer 88 stops at the top of the substrate 82.
  • the upper 92 and lower ohmic contacts 90 are respectively formed on the layer 88 and under the substrate 82.
  • the LED 80 operates in a conventional manner: the electrons are injected into a nanowire 84 via the substrate 82 and the holes are injected into the nanowire 84 via the layer 88. The injected electron-hole pairs thus recombine, at least partially radiatively. in the nanowire 84 which constitutes an active zone.
  • the LED 80 has a structure of the double hetero-structure type since there exists for each nanowire 84 a first hetero-structure formed of the nanowire 84 and the substrate 82, and a second hetero-structure formed of the nanowire 84 and of layer 88.
  • any point of the nanowire 84 that is to say of the active zone, is at a distance less than or equal to the radius of the nanowire.
  • the injection surface of the holes is therefore both very large and very close to each point of the active zone.
  • the substrate 82 is selected so as to have a low resistivity, in particular of the order of 0.001 ohm / cm, in order to facilitate the injection of electrons into the nanowires 84, and is for example constituted of n + doped Si of a 400 nanometers thick.
  • This substrate can also support the epitaxy of GaN nanowires.
  • any type of semiconductor material that can be modulated in energy and epitaxied in the form of nanowires can enter the constitution of the nanowires 84 and the p-doped layer 88.
  • the LED 80 is made based on GaN: the nanowires 84 consist of InGaN unintentionally doped, and having a residual n-doping of less than 10 16 electrons / cm 3 , the indium composition is chosen according to the length wave to be emitted by the LEDs 80.
  • the planarizing layer 88 is made of GaN doped with magnesium p, InGaN or p-doped by the indium composition of magnesium less than that of the nanowires 84, the material of the layer 88 having a concentration of carriers p of the order of 10 18 holes / cm 3 .
  • the LED 80 is made on the basis of ZnO: the nanowires 84 consist of unintentionally doped ZnO and the p-doped layer 88 is made of ZnMgO, or the nanowires consist of unintentionally doped ZnCdO and the layer 88 is consisting of ZnO.
  • the LED 80 is made based on GaAlAs, the nanowires 84 consist of unintentionally doped GaAs and the p-doped layer 88 consists of GaAlAs, or the nanowires consist of unintentionally doped InGaAs and the layer 88 is made of GaAs.
  • the LED 80 is made based on AlInGaP, the nanowires 84 consist of unintentionally doped AlGaInP and the layer 88 is made of the same material but with a stronger composition of aluminum.
  • the upper contact 92 which spatially delimits the macroscopic size of the LED 80, for example a square of 1 mm 2 , can in turn consist of different stacks, such as for example a thin semi-transparent contact Ni alloy and Au or indium-tin oxide (or ITO for "Indium Tin Oxide "), covered with a thick comb, for example Ni alloy and Au to reduce its series resistance.
  • the lower contact 90 is deposited on the entire lower face of the substrate and is for example made of an Au-coated NiSi alloy.
  • the factor F is then equal to 0.314. This factor F makes it possible to weight the macroscopic current density in order to take into account the difference between the area of the device and the sum of the areas of the base of the nanowires.
  • a minimum height W DH of the nanowires 84 selected in this manner has the effect that when a J overflow current density is injected into the nanowires 84, the Fermi level of the double heterostructure reaches the top of the energy barrier. separating the energy levels E F and E C.
  • the density of the charge carriers in the nanowires 84 is then maximal, any further increase in the current density not leading to an increase in the density of the charge carriers, since the latter escape from the nanowires 84 without recombining. In other words, for any current density value less than or equal to J overflow , the carriers do not escape from the nanowires 84, so that the phenomenon of " Droop Efficiency " is decreased.
  • the J overflow value is directly proportional to the ratio W DH F , and therefore to the thickness of the active zone, that is to say the height W DH of the nanowires, for a given filling factor F. This is true in the case of quantum non-confinement, that is for a ratio W DH F greater than 5 nm. In the case of quantum wells, the quantification of energy levels makes it even more critical to increase the current density on the carrier exhaust.
  • the ratio can be set W DH F minimum at 15nm without having a significant drop in the internal quantum efficiency of LED 80.
  • the maximum height of the nanowires 84 is chosen to be less than the diffusion length of the carriers.
  • a maximum height of nanowires 84 of a few microns makes it possible to obtain effective confinement.
  • Nanowires 84 whose minimum height is 40 nm, and whose maximum height does not exceed a few micrometers, therefore make it possible both to ensure good confinement of the charge carriers while avoiding the fall of the internal quantum efficiency due to exhaust losses of carriers outside the active area.
  • the nanowire structure of the LED 80 also allows a gain in the internal quantum efficiency compared to the state of the art due to the high volume of the active zones that form the core of the nanowires 84.
  • the LED according to the invention comprises an active zone of greater volume than that of the state of the art.
  • the process begins with the formation of a n-type resistivity semiconductor substrate 82 of the order of 0.001 ohm / cm, for example n + doped silicon of 2 inches and about 400 micrometers in thickness.
  • a thick InGaN hetero-epitaxy is carried out on the substrate 84 in order to obtain nanowires 84 with a height of between 40 and 1000 nanometers, and with a diameter of between 50 and 500 nanometers, for example a diameter of 100 nanometers ( figure 7 ).
  • the growth of the nanowires is carried out for example by MOCVD, by MBE or by HVPE (for " Hydride Vapor Phase Epitaxy ”) according to a so-called spontaneous mode or selectively.
  • No dopant is used during the growth of InGaN, which then has a residual doping of less than 10 16 electrons / cm 3 .
  • the process is then continued by the epitaxial growth of a p-doped GaN or InGaN layer 88 on the surface and at the periphery of the nanowires 84 (FIG. figure 8 ), the morphology of the layer 88 being controlled by the growth conditions.
  • the concentration of carriers p in the layer 88 is chosen from the order of 10 18 holes / cm 3 , and the indium composition is either zero (GaN-p), or if it is different from 0, less than that of the thick InGaN of the nanowires 84 to ensure the confinement of the carriers, since the addition of indium in the active zone attracts the carriers.
  • a part of the InGaN nanowires is left free, and therefore remains surrounded by air, in order to minimize the optical index of the medium and thus improve the extraction efficiency of the device, and in all cases the layer 88 is made so as not to come into contact with the substrate 82 in order to avoid any short circuit.
  • the layer 88 is not planarizing, and a planarization step of this layer is implemented, for example as described in the document WO 2009/087319 .
  • Lower ohmic contacts 92 and upper 90 are then respectively deposited under the substrate 82 and on the layer 88 ( figure 9 ).
  • the upper p contact 92 spatially delimits the size of the device and may consist of different stacks, such as the stack of a semi-transparent contact Ni / Au alloy or ITO and a thicker comb Ni / Au alloy for decrease the series resistance of the contact, as described in the document WO 2009/087319 .
  • the deposition of the lower contact n 90 on the rear face of the silicon does not pose any particular problem and may for example consist of a nickel silicide.
  • a p-type GaN layer is interposed by epitaxy between the InGaN nanowires 84 and the substrate 82, which allows a freer choice of material for the latter.
  • FIGS. Figures 10 to 12 A second embodiment is now described in relation to the manufacturing method illustrated in FIGS. Figures 10 to 12 .
  • This second embodiment differs from the first embodiment previously described in FIGS. Figures 7 to 9 in that, prior to the growth of the InGaN nanowires 84, n-doped GaN 100 nanowires, in particular Si, are epitaxially grown on the substrate 82 over a small thickness W GaN , for example a thickness of 100 nanometers, and with a carrier concentration n close to 10 18 or 10 19 carriers / cm 3 ( figure 10 ).
  • the nanowires 84 are then epitaxially grown on the n-doped GaN nanowires , which form a set of GaN / InGaN nanowires ( figure 11 ).
  • the process then continues in the manner described above for obtaining a LED based on double hetero-structure nanowires ( figure 11 ).
  • the base of the n-doped GaN nanowires allows a wider choice for the substrate 82, which may for example consist of silicon as for the first embodiment, or be a metal substrate consisting for example of copper, an alloy based on Ni and Molybdenum.
  • the small size of the nanowires makes it possible to obtain, at the base of the nanowires, n-type GaN which has better crystalline properties compared to the use of a buffer layer.
  • a third embodiment is now described in relation to the manufacturing method illustrated in FIGS. Figures 13 to 15 .
  • the process starts with the production of a substrate 82 and 100- doped GaN nanowires , as described previously ( figure 13 ).
  • an MBE epitaxial growth of InGaN 110 nanowires is implemented on the nanowires 100.
  • Magnesium is incorporated into the InGaN during the growth of the nanowires 110.
  • a relaxation mechanism is then observed, leading to the spontaneous formation by a phase separation, of a so-called "core / shell" structure, in which an undoped InGaN core is formed and is surrounded by an outer shell of n-doped GaN by magnesium ( figure 14 ).
  • An increase in the surface area of the InGaN volume in contact with the volume of p-doped GaN is thus obtained.
  • the process is then continued by the growth and coalescence of a p-doped GaN layer 112 at the free end of the nanowires 110 ( figure 15 ), then ohmic contacts are deposited, optionally after a planarization step, as described above in connection with the first embodiment.
  • a growth mask 120 of electrically insulating material which is inert with respect to the epitaxial growth of GaN or InGaN such as, for example, a mask made of silicon nitride or silica, is deposited on the substrate 82 ( figure 16 ).
  • the process is then continued by producing nanowires 84 in InGaN or GaN / InGaN nanowires as previously described ( figure 17 ), then the p-doped GaN layer and ohmic contacts.
  • This manufacturing variant makes it possible to precisely control the diameter of the nanowires as well as the spacing between them so as to optimize the extraction efficiency of the light produced by the LED.
  • the indium composition of the nanowires varies according to the height thereof.
  • the composition of Indium increases throughout the thread. This configuration can reduce the mechanical stresses within the material by progressive adaptation of the mesh parameter
  • a nano-LED 210 is formed on a portion of a support 212 comprising a common insulating substrate 214 , on which is deposited an electrically conductive layer 216, for example doped metal or semiconductor.
  • the layer 216 comprises a first electrically conductive layer 218 deposited on the substrate 214 and on which is formed a layer 220 of GaN type n.
  • the support portion 212 is for example made of a doped metal or semiconductor.
  • the nano-LED 210 comprises a core 222 made of a semiconductor material of the III-V or II-VI family, preferably of the III-N family.
  • the core 222 is coated at least on its upper part by a shell 224 made of a p-doped semiconductor material of the same family as that of the core material 222, but having a higher energy gap so as to allow the injection of holes from the shell 224 to the heart 222.
  • the shell 224 is preferably insulated from the support 212 to avoid any short circuit between an upper electrical contact 226 and the lower conductive layer 216. For example, the shell 224 stops above the support 212.
  • the nano-LED 210 is embedded in an insulating and planarizing layer 228, except for its head, and the upper electrical contact 226 formed on the planarizing layer 228.
  • the upper electrical contact 226 is semitransparent at the emission wavelength of the nano-LED 210 and may consist of different stacks, such as for example a semi-transparent contact consisting of thin layers of Ni and Au or indium tin oxide (or ITO for "Indium Tin Oxide” ) . It can be locally covered with a thick comb, for example thicker layers of Ni and Au to decrease its series resistance.

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Claims (14)

  1. Optoelektronische Vorrichtung, Folgendes aufweisend:
    - eine aktive Halbleiterzone (84) zur Strahlungsrekombination von Elektronen-Loch-Paaren, die in Form mindestens eines Nanodrahts realisiert sind, der aus einem nicht absichtlich dotierten Material hergestellt ist;
    - eine Halbleiterzone (88) zur radialen Injektion von Löchern in den oder jeden Nanodraht, die aus einem Halbleitermaterial hergestellt ist, das mit einem ersten Leitfähigkeitstyp dotiert und von einem Bandabstand ist, der größer ist als der Bandabstand des den Nanodraht bildenden Materials; und
    - eine Halbleiterzone (82) zur axialen Injektion von Elektronen in den oder jeden Nanodraht, die aus einem Halbleitermaterial hergestellt ist, das mit einem dem ersten Leitfähigkeitstyp entgegengesetzten zweiten Leitfähigkeitstyp dotiert ist.
  2. Optoelektronische Vorrichtung nach Anspruch 1, wobei die aktive Zone (82) aus einem einzigen Halbleitermaterial gebildet ist.
  3. Optoelektronische Vorrichtung nach Anspruch 2, wobei die aktive Zone (84) aus einem Halbleitermaterial des Typs III-V oder des Typs II-VI und insbesondere des Typs III-N gebildet ist.
  4. Optoelektronische Vorrichtung nach Anspruch 3, wobei:
    - die aktive Zone (84) aus nicht absichtlich dotiertem InGaN besteht;
    - die dotierte Zone (88) zur Injektion von Löchern aus p-dotiertem GaN oder p-dotiertem InGaN mit einer Konzentration an In besteht, die geringer ist als diejenige der aktiven Zone; und
    - die dotierte Zone (82) zur Injektion von Elektronen aus n-dotiertem Si oder n-dotierten GaN besteht.
  5. Optoelektronische Vorrichtung nach Anspruch 3 oder 4, wobei die Höhe der aktiven Zone (84) einen Mindestwert aufweist, der nach dem Verhältnis: F . J overflow = 4. ⁢ N C 3. ⁢ π 2 . E F - E C k . T 3 . e . B . W DH
    Figure imgb0015
     ausgewählt ist, worin F der Füllfaktor der Nanodrähte ist, Joverflow die maximale Stromdichte ist, die von den Nanodrähten ohne Sättigung an Elektronen ertragen wird, Ne die effektive Zustandsdichte des Leitungsbands des Materials ist, e die Elementarladung ist, B der bimolekulare Rekombinationskoeffizient des Materials ist, und WDH der Mindestwert der Höhe der aktiven Zone ist.
  6. Optoelektronische Vorrichtung nach Anspruch 3, 4 oder 5, wobei die aktive Zone aus InGaN hergestellt ist, und
    ▪ die Nanodrähte (84) eine Dichte zwischen 108 und 1010 pro Quadratzentimeter haben;
    ▪ die Nanodrähte (84) einen Durchmesser zwischen 50 Nanometer und 500 Nanometer haben; und
    ▪ die Höhe der aktiven Zone (84) zwischen 40 Nanometer und 5 Mikrometer beträgt.
  7. Optoelektronische Vorrichtung nach Anspruch 6, wobei die Nanodrähte (84) eine Dichte von 4,109 cm-2, einen Durchmesser von 100 Nanometer und eine Höhe der aktiven Zone von 40 Nanometer haben.
  8. Optoelektronische Vorrichtung nach einem der vorhergehenden Ansprüche, wobei es keine Elektronensperrzone zwischen der aktiven Zone und der p-dotierten Zone gibt.
  9. Optoelektronische Vorrichtung nach einem der vorhergehenden Ansprüche, wobei die Nanodrähte auf einem Substrat (82) aus n-dotiertem Halbleitermaterial ausgebildet sind, wobei das Substrat eine Elektroneninjektionszone bildet.
  10. Optoelektronische Vorrichtung nach einem der Ansprüche 1 bis 8, wobei die Nanodrähte (84) eine Basis aus n-dotiertem Halbleiter zur Elektroneninjektion aufweisen.
  11. Optoelektronische Vorrichtung nach einem der Ansprüche 1 bis 8, wobei die Nanodrähte (84) auf einem Substrat (82) ausgebildet sind, das eine durchgehende Schicht aus n-dotiertem Halbleitermaterial aus derselben Klasse wie das die aktive Zone bildenden Material aufweist, und auf der die Nanodrähte aufliegen, wobei die durchgehende Schicht die Zone zur Elektroneninjektion bildet.
  12. Optoelektronische Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Nanodrähte (84) auf einem Substrat (82) ausgebildet sind, und die Zone (88) zur Injektion von Löchern den dem Substrat (82) entgegengesetzten Abschnitt der Nanodrähte (84) teilweise umhüllt.
  13. Optoelektronische Vorrichtung nach Anspruch 12, wobei die Zone (88) zur Injektion von Löchern mindestens drei Viertel des Umfangs der Nanodrähte (84) umhüllt.
  14. Optoelektronische Vorrichtung nach einem der vorhergehenden Ansprüche, wobei die Zone (88) zur Injektion von Löchern eine planarisierende Materialschicht bildet.
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FR1057330A FR2964796B1 (fr) 2010-09-14 2010-09-14 Dispositif optoelectronique a base de nanofils pour l'emission de lumiere
FR1154313A FR2975532B1 (fr) 2011-05-18 2011-05-18 Connexion electrique en serie de nanofils emetteurs de lumiere
PCT/FR2011/052078 WO2012035243A1 (fr) 2010-09-14 2011-09-12 Dispositif optoelectronique a base de nanofils pour l'émission de lumière

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