EP2586067A2 - Cellule solaire - Google Patents

Cellule solaire

Info

Publication number
EP2586067A2
EP2586067A2 EP11705887.5A EP11705887A EP2586067A2 EP 2586067 A2 EP2586067 A2 EP 2586067A2 EP 11705887 A EP11705887 A EP 11705887A EP 2586067 A2 EP2586067 A2 EP 2586067A2
Authority
EP
European Patent Office
Prior art keywords
layer
metal layer
solar cell
cell according
openings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11705887.5A
Other languages
German (de)
English (en)
Inventor
Hans-Joachim Krokoszinski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP2586067A2 publication Critical patent/EP2586067A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022491—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of a thin transparent metal layer, e.g. gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the field of the semiconductor components, in particular the solar cells, and relates to a crystalline solar cell with an n- or p-doped semiconductor substrate and a passivated back.
  • Silicon solar cells with a "passivated backside” have an improved optical mirroring and a much improved passivation of the rear surface compared to the previously standard aluminum back surface field (BSF), see A. Götzberger et al., “Sonnenenergie: Photovoltaics ", BG Teubner Stuttgart, 1997.
  • the cell concept thus produced is called” passivated emitter and rear cell “(PERC), where the dielectric passivation adapted to the backside doping is locally opened at many small points, so that the metal layer deposited on the passivation layer can contact the semiconductor, but only at a small area fraction of the back surface, to minimize the strong recombination of the electron-hole pairs on metallized surfaces.
  • the metallization of the rear side is in most cases made of aluminum and is deposited over the entire area on the entire back, usually with vacuum vapor deposition or sputtering.
  • Documents which relate to such solar cells and methods for their production and are associated with rear-side structuring steps and / or the rear-side driving in of dopants are, for example, DE 19525720 C2, DE 102007059486 A1 or DE 102008 013446 AI and DE 102008033 169 AI (both latter of ErSol Solar Energy AG).
  • connection structures in particular under the influence of soldered joints, is concerned for example with JP 2005027309 A, DE 102008017312 A1 or DE 102008020796 A1.
  • LFC Laser Fired Contacts
  • the backside emitter pn junction
  • the backside emitter pn junction
  • the formation of the Al-Si eutectic which typically melts to a few microns, would increase a breakthrough through the thin p + emitter into the n-base and there lead to a short circuit to the base. Therefore, the metallization with low temperatures (eg 400 ° C, optionally also in forming gas) must be tempered to a sufficiently good ohmic
  • Sputter sources are provided for the aluminum coating.
  • the compromise involves higher investment and / or process costs.
  • the proposed solar cell is characterized by a thin dielectric cover layer covering the first metal layer, which has a first regular arrangement of narrow line-like openings and a second regular arrangement of substantially wider lines or elongated island-like openings, wherein the first and second opening arrangement at an angle, in particular transversely to each other, are aligned. It is further characterized by a highly conductive and solderable on the exposed surface second metal layer in the openings of the first and second opening arrangement, which contacts there the first metal layer.
  • the solar cell according to the invention with a passivated and metallized large back side which was chemically or galvanically reinforced in the open in the dielectric cover layer narrow finger areas and busbar or Lötpad Schemeen current collecting, possesses the case in any case the following advantages over the prior art:
  • the solar cell has in addition to the usual large-area
  • Aluminum layer with local contacts to the semiconductor surface also solderable areas (busbars or soldering pads).
  • the second metal layer comprises at least one metal of the group comprising Pd, Ni, Ag, Cu and Sn.
  • the second metal layer has a sequence of metal layers, in particular the layer sequence Pd / Ni / Ag or Ni / Cu / Sn.
  • the second metal layer is produced by a chemically or galvanically deposited reinforcing layer.
  • the thin dielectric cover layer comprises at least one of the silicon oxide, silicon nitride,
  • the substrate is a p-doped silicon substrate with a phosphorus-doped emitter on the first main surface.
  • the semiconductor substrate is an n-doped silicon substrate having a boron- or aluminum-doped p + emitter on the second major surface.
  • the first and second openings in the thin dielectric capping layer are formed by masked ion etching, particularly in the same plant in which the capping layer is formed.
  • FIG. 1 to 3 in perspective schematic representations of an initial situation and a first and second process section of the production of a
  • 4A and 4B are schematic plan views of two embodiments
  • the emitter may be located either on the front side or on the back side. In the latter case, a doping for a front surface field (FSF) is usually produced on the front side.
  • FSF front surface field
  • the front side 2a is already completely processed, d. H. doped homogeneously or selectively, with passivation / antireflection coating or layer sequence and provided with a solderable contact grid.
  • the back side 2b may be undoped or a homogeneous doping 3
  • the surface is coated by means of chemical vapor deposition (CVD) or physical vapor deposition (PVD, ie vapor deposition or sputtering) with a passivation layer or layer sequence 4 which has been selected and optimized with regard to doping polarity and doping concentration and which is provided with a technique known per se from the prior art locally removed (opened).
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • ie vapor deposition or sputtering a passivation layer or layer sequence 4 which has been selected and optimized with regard to doping polarity and doping concentration and which is provided with a technique known per se from the prior art locally removed (opened).
  • the resulting dot matrix in which the local contact openings 5 are arranged, depends on the sheet resistance of the surface: in the case of undoped surfaces (PERC cell), the distance between the points D
  • the first process step according to the invention begins with the full surface coating (known per se from the prior art) with a metal layer sequence 6 (FIG. 2), it being possible to use either vapor deposition technology or sputtering technology. It may be z. B. aluminum which is optionally covered in the same plant with a thin nickel-containing seed layer (not shown) for later chemical or galvanic reinforcement. Alternatively, of course, other metals or metal layer sequences can be selected, for. Titanium / palladium / silver or nickel chromium / nickel / silver.
  • the entire backside is covered with a thin dielectric thin film 7.
  • all the deposited layers lie both on the passivation layer sequence 4 and on the semiconductor surface exposed in the local openings 5 in the passivation layer.
  • the covering layer 7 may be an oxide or a nitride of aluminum or silicon. It can be evaporated or reactively sputtered from the metal target or deposited by RF sputtering from the dielectric target.
  • the dielectric in the second step, with a suitable technique, the dielectric
  • Cover layer in the form of many, narrow preferably equidistant and parallel to each other arranged lines 8 open ( Figure 3).
  • the following techniques known per se from the prior art can be used: laser ablation, screen-printed or ink-jet printed etching paste, inkjet-masked wet-chemical etching.
  • the distance W of the parallel openings 8 is typically of the order of 1mm to 10mm, preferably 2mm to 5mm.
  • the width of the openings is typically about ⁇ to 1mm, preferably 200pm to 500 ⁇ .
  • Bus bar strips 9a can have any desired width optimized for the soldering process. It could only be 2 busbars.
  • Pad areas 9b can be as many as desired and of any size. They can be arranged along 2 or 3 lines, depending on the number and location of the busbars on the front.
  • the metal surface exposed in the openings 8, 9a, 9b in the covering layer is reinforced in a suitable chemical or galvanic deposition process with a highly conductive and readily solderable metal layer sequence (FIG. 5).
  • a highly conductive and readily solderable metal layer sequence (FIG. 5).
  • the exposed metal for example, it may be palladium, nickel and silver or nickel, Copper and tin act. If aluminum with a nickel seed layer has been chosen, nickel will likely be deposited in the first bath, which will then be covered with sufficient silver.
  • the wider busbar or pad regions 9a or 9b are also post-amplified and solderable with the same layer sequence 11 (FIG. 6).
  • the post-reinforced narrow fingers 10 open either directly into the reinforced busbar surfaces IIa or solder pad surfaces IIb, or into narrow connecting lines between the pads (see FIG. Incidentally, the embodiment of the invention is not limited to the above-described examples and emphasized aspects, but only by the scope of the appended claims.

Abstract

L'invention concerne une cellule solaire comprenant : une succession de couches de passivation présentant une pluralité d'évidements sous forme d'îlots dans lesquels les couches de passivation sont totalement éliminées, sur la seconde surface principale; une première couche métallique mince disposée sur la succession de couches de passivation et dans les évidements sur la surface du substrat; une mince couche diélectrique de recouvrement recouvrant la première couche métallique et présentant un premier agencement régulier d'ouvertures étroites linéaires et un second agencement régulier d'ouvertures sensiblement plus larges, linéaires ou sous forme d'îlots allongés, le premier et le second agencement d'ouvertures étant orientés selon un certain angle, en particulier perpendiculairement l'un par rapport à l'autre; ainsi qu'une seconde couche métallique fortement conductrice pouvant être brasée sur la surface exposée, dans les ouvertures du premier et du second agencement d'ouvertures, cette seconde couche métallique mettant la première couche métallique en contact électrique à cet endroit.
EP11705887.5A 2010-04-26 2011-03-01 Cellule solaire Withdrawn EP2586067A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010028189.1A DE102010028189B4 (de) 2010-04-26 2010-04-26 Solarzelle
PCT/EP2011/052954 WO2011134700A2 (fr) 2010-04-26 2011-03-01 Cellule solaire

Publications (1)

Publication Number Publication Date
EP2586067A2 true EP2586067A2 (fr) 2013-05-01

Family

ID=44625254

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11705887.5A Withdrawn EP2586067A2 (fr) 2010-04-26 2011-03-01 Cellule solaire

Country Status (7)

Country Link
US (1) US9209321B2 (fr)
EP (1) EP2586067A2 (fr)
JP (1) JP2013526045A (fr)
KR (1) KR20130073900A (fr)
CN (1) CN102893406B (fr)
DE (1) DE102010028189B4 (fr)
WO (1) WO2011134700A2 (fr)

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WO2011134700A2 (fr) 2011-11-03
DE102010028189B4 (de) 2018-09-27
DE102010028189A1 (de) 2011-10-27
CN102893406A (zh) 2013-01-23
US20130104975A1 (en) 2013-05-02
JP2013526045A (ja) 2013-06-20
CN102893406B (zh) 2016-11-09
KR20130073900A (ko) 2013-07-03
US9209321B2 (en) 2015-12-08
WO2011134700A3 (fr) 2012-06-07

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