EP2572850A1 - Opfersubstrat zur Verwendung beim Schneiden von Wafern - Google Patents

Opfersubstrat zur Verwendung beim Schneiden von Wafern Download PDF

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Publication number
EP2572850A1
EP2572850A1 EP11190570A EP11190570A EP2572850A1 EP 2572850 A1 EP2572850 A1 EP 2572850A1 EP 11190570 A EP11190570 A EP 11190570A EP 11190570 A EP11190570 A EP 11190570A EP 2572850 A1 EP2572850 A1 EP 2572850A1
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EP
European Patent Office
Prior art keywords
sacrificial substrate
wire
wafers
substrate
sacrificial
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EP11190570A
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English (en)
French (fr)
Inventor
Christy De Meyer
Jürg Zanetti
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Meyer Burger AG
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Meyer Burger AG
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Publication date
Application filed by Meyer Burger AG filed Critical Meyer Burger AG
Priority to EP11190570A priority Critical patent/EP2572850A1/de
Priority to CN201280057521.XA priority patent/CN103958140B/zh
Priority to PCT/IB2012/054972 priority patent/WO2013042055A1/en
Priority to IN3101DEN2014 priority patent/IN2014DN03101A/en
Publication of EP2572850A1 publication Critical patent/EP2572850A1/de
Withdrawn legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work

Definitions

  • This invention relates to a sacrificial substrate (also named 'beam') for use in the cutting of bricks or wafers from a brick or ingot (photovoltaics/semiconductor industry) or a core (photonics).
  • a sacrificial substrate also named 'beam'
  • a sacrificial substrate for use in the cutting of bricks or wafers from a brick or ingot (photovoltaics/semiconductor industry) or a core (photonics).
  • a sawing device for cutting wafers has a wire web formed between at least two wire guiding rolls.
  • a piece of material (ingot, brick or core) is lowered into the wire web, while the wire is cycling in a reciprocating motion and as such performing its sawing action, thereby the piece of material is cut into wafers.
  • the same method is used for cutting bricks from an ingot.
  • the inventive sacrificial plate may be used for such wire saws (called bricking or cropping machines, or "Brick Master" at Meyer Burger) as well.
  • the term wire saw is used here for any type of wire saw, bricks can have any shape.
  • the cutting of bricks is e.g. disclosed in WO 2010/128011 A1 , the disclosure of which is entirely included into the present specification by reference.
  • a Polycrystalline ingot is cut into bricks: For squaring (round) mono crystalline ingots are placed on a holder. Now a wire field like shown in Fig. 3 of WO 2010/128011 A1 cuts from above to make the cross section of the round ingot more or less square or any other desired form. Also the ingot is cut in the pieces so that the bricks get the desired length. For cropping the tapered ends of monocrystalline silicon ingots are removed.
  • Typical materials sawn are GaAs, germanium, polycrystalline or monocrystalline or mono-like silicon, InP, quartzes, sapphire, or other ceramic materials.
  • a sacrificial plate When cutting a piece of material, such as a brick, ingot or core, it is attached to a sacrificial plate.
  • the sacrificial plate in turn is attached to a fixture attachment usually made of metal.
  • the fixture attachment is used to mount the assembly to the mounting of the sawing machine.
  • the function of the sacrificial substrate is described in detail.
  • the brick As the wire guide rolls turn, the brick is pushed through the wire field, making the sawing wire bend downwards. With increasing cutting depth the sawing wire develops to a so called “bow". Because of this bow, the (top) edges of the piece of material are cut before the middle part of the brick is completely cut thru.
  • the sacrificial substrate It is the purpose of the sacrificial substrate to keep the fixture attachment at a distance to the piece of material so that it is not cut (and thus damaged).
  • the sacrificial substrate is thus a disposable part. Once the wafers have been cut, the fixture attachment, sacrificial substrate and the wafers are removed from the sawing machine.
  • the individual wafers which hang like a comb from the mounting assembly will be separated from the sacrificial substrate and the assembly system.
  • the term “fins” is used to describe the structures formed in the sacrificial substrate (or “beam") when the sawing wire has partially sawn the substrate.
  • a fin has today approximately the same thickness as the sawn wafers.
  • the sacrificial substrate may have various shapes according to the shape of the piece of material. Ingots, bricks or cores can have various shapes and sizes. E.g. the sacrificial substrate can have rectangular shape or a curved shape on one side for receiving a cylindrical core and a flat shape on the other side. For sapphire both types of shapes occur. For semiconductors the beam is mostly arc shaped on one side; for photovoltaic applications the sacrificial substrate is mostly rectangular.
  • a cutting fluid is used during the sawing process.
  • the cutting fluid has at least a cooling and lubricating function.
  • As cutting fluids for wafering with diamond wire two major systems are considered: a purely water-based cutting fluid containing water and additives, for example Synergy DWS500 (supplied by Diamond Wire Materials Technology, US) or a cutting fluid containing organic fluids besides water, mostly glycol based cutting fluids are known, for example Yumark® (supplied by Yushiro Manufacturing America Inc., US).
  • the present invention relates to both, the water-based and glycol based process, and any other process. In particular, the water-based process is more demanding for the sacrificial substrate properties, mainly related to swelling and deformation.
  • Continuous wafering process (production like), sometimes also called back to back wafering: In comparison to the wire used in the wafering process with slurry, where typical 400 km of sawing wire is consumed in one cut, a limited length of sawing wire is used during a cut in the wafering process using diamond wire, typically 1-10 km.
  • the diamond wire has a longer lifetime than a regular slurry wire and as such a smaller length of wire is used.
  • the process is a pilgrim process whereby a part of the diamond wire web is moved towards a take-up spool in a cut, but also a major part of the wire used in this cut is still on the wire web and as such will also be used in the consecutive cut.
  • the cutting power of a diamond wire should not be adversely affected by the sacrificial substrate. Otherwise this will affect the cutting performance of the sawing wire in consecutive cuts.
  • the wire web is supported by wire guiding rolls. Usually the rolls are coated with polyurethane having a groove profile for receiving the wire.
  • the diamond wire is webbed over the wire guiding rolls in those grooves.
  • the pitch of the grooves i.e. distance over which the groove pattern repeats itself
  • the wire diameter that is used will determine the thickness of the sawn wafers.
  • Wire jumps and wire pairing are drawbacks related to the repetitive wire web pattern and both will cause thickness deviation from the desired wafer thickness.
  • wire pairing When two wires stick together in the web, this is called wire pairing.
  • wire jump When a wire is not lying in its groove, this is called a wire jump.
  • TTV total thickness variation
  • Edge defects can be damaged edges, broken corners of wafers or an irregular edge.
  • a chip is a shell shaped edge defect on only one side of the wafer.
  • Micro cracks is another important defect that can be the result of improper cutting or the use of improper beams.
  • the costs of the process of fixed abrasive wafering can be reduced considerably if the fixed abrasive wire can be continuously used in consecutive cuts, even though part of the wire web was already used in a previous cut on condition that the remaining sawing capability of that used wire hasn't deteriorated too much.
  • the sawing capability can be measured by the wire deflection in the cutting process (determining the shape or "bow" of the wire during cutting). Wire that has lost its sawing potential will deflect more (and have a higher or more pronounced bow) than new, unused wire.
  • the sacrificial substrate is cut partially until all wafers are fully sliced, compensating for the wire bow caused by the sawing procedure.
  • This sacrificial substrate should be as inexpensive as possible and should have no impact on the slicing quality of the wafers.
  • the current sacrificial substrate used in wafering with slurry is predominantly made of glass. It has the advantage that it is inexpensive. It also does not absorb moisture and has a comparable thermal coefficient as silicon and sapphire and is geometrically and thermally stable within the typical conditions observed in the wafering process. However, it has the disadvantage that it is detrimental to the quality of diamond wire. When the diamond wire starts cutting into the glass plate, the sawing wire is incapable of removing the created glass shards from the sawing channel (i.e. the channel created in the material being cut). As a result, the cutting quality of the sawing wire is impaired and the forces exerted on the sawing wire will increase if the movement of the work piece thru the web is not reduced.
  • thermoplasts thermosets or composites
  • epoxy resin based materials filled with a diversity of fillers have been used so far.
  • DMT111GB supplied by Diamond Wire Materials Technology, US
  • phenol-resin based substrate that is rather cheap compared to most other composite solutions and gives good results in glycol based sawing processes.
  • the disadvantage of this beam is that it takes up moisture and swells in uncontrolled manner in the water-based wafering process, resulting in wafers falling down from the sacrificial mounting plate and/or are damaged.
  • Valtron® 190 Clean Beam supplied by Valtech Corp, US
  • a mineral filled thermoset plastic material has the advantage that it is geometrically stable, resulting in straight, undeformed fins (part of the cut sacrificial plate between two neighboring cutting wires).
  • the interaction of the substrate material with the diamond wire results in a seriously deteriorated sawing performance of the diamond wire in subsequent cuts. Therefore, in the subsequent cut, more new wire will be consumed. As a result, the costs of the process increases.
  • EP 2 111 960 A1 discloses a mounting plate with hollow tubes as alternative to standard glass and more expensive polymer plates, but this is made of ceramic material, that is too hard for the diamond wire cutting process and results in early failure of the diamond wire.
  • the object of the invention is to overcome the problems arising in prior art solutions and to provide a cost-effective sacrificial substrate for wafer cutting that has no adverse effect on the sawing properties of the sawing wire, has no adverse effect on the cleanliness of the saw or wire guiding rolls, is cost effective, results in high quality wafers and high yield, does not damage the wafers and at the same time is compatible with both water based and glycol based cutting processes.
  • the sacrificial substrate according to the invention is, however, characterized by a larger degree of geometrical deformability, combined with a low E-modulus so that the force on the wafers remains small and wafers are not damaged or even fall off.
  • the object of the invention is achieved with a sacrificial substrate having a mounting surface for holding a piece of material, such as an ingot, brick or core, for cutting a plurality of wafers from the piece of material, wherein the sacrificial substrate has a flexural modulus or E-Modulus according to ISO 178 smaller than 6000 MPa, more preferably smaller than 5000 MPa, most preferably smaller than 4000 MPa.
  • a sacrificial substrate which is made from a porous material.
  • the porosity of the material with open and/or closed cavities makes the sacrificial plate softer for the sawing wire. There is also less material (due to the cavities) to deposit on the sawing wire and wire guide rolls.
  • the sacrificial substrate has a porosity larger than 0,15 (or 15 %), more preferably larger than 0,30 (or 30 %), most preferably larger than 0,40 (or 40 %).
  • the porous material is a foam, preferably a polymer foam.
  • foam any substance is meant that is formed by trapping many gaseous bubbles, more precisely, gaseous bubbles trapped in a solid.
  • the object is also achieved by a sacrificial substrate, wherein the sacrificial substrate is made from a polymer based material which has a water absorption smaller than 2%, more preferably smaller than 1.5%, most preferably smaller than 0.7%.
  • the water absorption is a property of a material which corresponds to the capability of the material of absorbing water by diffusion.
  • the water absorption of a material is determined under certain measurement conditions.
  • the water content or absorption is related to the mass of the water absorbed in a material in relation to the mass of the material specimen. Water absorption is given in units of mg or in %.
  • the measurement procedure and conditions are given in the DIN norm 53495.
  • the water absorption according to the present application is related to the measurement conditions, where the material specimen is immersed in distilled water at 23°C during 24 hours.
  • the object is also achieved by a sacrificial substrate wherein the sacrificial substrate has a heat deflection temperature, which is larger than 50°C, more preferably larger than 60°C, preferably even higher than 70°C.
  • the sacrificial substrate is made from a duroplast material.
  • the sacrificial substrate is made of a foam, such as a polymer foam, a ceramic foam or a metal foam.
  • the sacrificial substrate is made of polyurethane.
  • the sacrificial substrate is made of foamed polyurethane, and wherein preferably the foamed polyurethane has a moisture absorption smaller than 0.7%.
  • the object is also achieved by method of making a plurality of wafers of a piece of material, such as an ingot, brick or core, comprising the steps of: mounting the piece of material to a sacrificial substrate, preferably by gluing; mounting the sacrificial substrate with the piece of material in a cutting device; and cutting the piece of material into a plurality of wafers, wherein the sacrificial substrate is a sacrificial substrate according to any of the embodiments described above.
  • the sacrificial substrates according to the invention have the advantage that they don't deteriorate the cutting performance of the sawing wire (fixed abrasive wires, wires with the use of abrasive suspended in a slurry) and the consecutive cuts yield wafers with stable and in spec TTV's and saw marks. Note that also when cutting one beam, at the end of the cut the diamond wire is impaired. Since some cuts may have been completed already, the wire may pass thru the beam an in the next turn in the web still has to cut the work piece.
  • a beam according to prior art with a higher modulus is used (E-modulus of 12000MPa).
  • a typical force F of 0.0342N is expected to work at the bottom of the wafer as shown in figure 12 , resulting in a deflection of the wafer, ⁇ d of 9.1mm and the resulting tension on the wafer at the interface with the glue ⁇ is 10N/mm 2 .
  • a beam according to this invention with an E-modulus of 6000MPa is used.
  • F 0.0342N working in at the bottom of the wafer as in figure 14
  • the force F of 0.0342N was obtained after a basic calculation using a finite elements model of the force required to deflect the distal end of a wafer of the mentioned dimensions over a distance ⁇ d of 3.6mm side ways.
  • the proximal end of the wafer was attached to a beam.
  • the sacrificial substrate may have an E-modulus smaller than 6000MPa (according to ISO 178); more preferably E-modulus smaller than 5000MPa; most preferably smaller than 4000MPa.
  • the traditional substrate used in wafering with slurry, glass has a typical modulus in the range of 50-90GPa.
  • E-modulus values have been reported of > 15GPa; Ceramic substrates will typically have higher moduli e.g. calcite (CaCO3 in the range 70-90GPa) and as such ceramic filled plastics usually tend to enhance the modulus of the matrix plastic material.
  • Such reinforced epoxy plates with E-moduli above 10.000 MPa have been found in the field.
  • the invention suggests to use materials with a certain porosity while still allowing for sufficient geometrical stability of the substrate.
  • Another advantage of the invention is the following: Since the substrate relaxes the bow of the sawing wire (there is no bow in the substrate), the substrate doesn't have to be as thick as substrates according to prior art. Since less material will be used as a sacrificial substrate, this is much more economically and ecologically friendly.
  • Fig. 1 shows a cutting device 5 fur cutting a plurality of wafers from a piece of material 3, which is glued to a sacrificial substrate 1.
  • the sacrificial substrate 1 is mounted to a fixture attachment 8 which in turn is connected to a support 9 of cutting device 5.
  • a wire 7 forming a wire web is supported and driven by wire guiding rolls 6. In the cutting process the piece of material 3 is moved through the wire web.
  • Fig. 2 shows the comb like structure of the plurality of wafers 4 hanging on the sacrificial substrate 1 after the cutting procedure.
  • Fig. 3 shows that the shape of the sacrificial substrate may vary depending on the shape of the piece of material 3.
  • the piece of material 3 is a cylindrical core and the sacrificial plate has a correspondingly curved mounting surface 4. Any other shape of the sacrificial substrate 1 would be possible.
  • Fig. 4 shows a test arrangement for testing the performance of the sacrificial substrate's material.
  • a fixture attachment 8 to be connected to the cutting device 5 carries an alternating sequence of sacrificial substrates 1 and pieces of material 3 (bricks). The experimental details are described in the following:
  • a 20mm high mono Si brick 3 is glued with Delo-Duopox RM885 to a 12mm high sacrificial substrate 1 and this is glued again to a 20mm high mono Si brick 3, and so on in order to finally create a sandwich of sacrificial substrates 1 and mono Si bricks 3 whereby the transition of Si to substrate 1 and substrate 1 to Si is created 3 times (see figure 4 ).
  • the setup used for the above experiments is also beneficial for normal production.
  • the wire bow of the wire was measured when the wire was moving through the sandwich construction. (for the results shown in figure 5 , this was a substrate according to the invention; for the results shown in figure 6 , this was a Valtron® 190 Clean Beam according to prior art.)
  • the sawing wire deflection falls down to approximately zero when the wire is cutting into the sacrificial substrate 1 and returns to the level it had at the end of the first silicon brick 3 at the start of sawing in the subsequent silicon brick.
  • the process can thus be optimized towards the wire lifetime of the diamond wire used and as a consequence at the most efficient cost.
  • An additional advantage consists in the fact, that the last step of the sawing recipe, the cutting out process, is completed faster because of the "zero" bow in the sacrificial substrate 1.
  • the deformation of the substrate 1 was visually inspected by looking at the fins created in the substrate 1 after de-gluing and separating the wafers 4. It was the general believe until now that the fins should not be deformed (cfr like in figure 7c ) because this deformation would increase the risk for wafer damage and wafer loss, and results in thickness variation of the wafers. However, with the present invention, it could be shown, that some deformation is allowed (cfr figure 7a ).
  • the sacrificial substrate may have an E-modulus smaller than 6000 MPa (according to the ISO norm ISO 178); more preferably an E-modulus smaller than 5000 MPa; most preferably smaller than 4000 MPa.
  • the thickness variation of the fins is an indication of how much the fins swell due to the used coolant system. If the fins swell too much because of the interaction with the cooling fluid, the risk for wafer loss and wafer damage is again increased.
  • the standard deviation of the fin thickness was measured for several materials.
  • the standard deviation of the lamella thickness is larger than 10 ⁇ m (table 1).
  • the Valtron® 190 clean beam (according to prior art) that provides very good wafer quality results in single cuts and has very limited deformation also has a very low thickness variation. However, this beam (substrate) is too demanding for the diamond wire.
  • the substrate of the current invention that has an apparent deformation of the fins in image 7a has a standard deviation of the fin thickness below 10 ⁇ m (table 1).
  • the polymer, used in one embodiment of the present invention may have a moisture absorption (or water absorption) (according to the norm DIN 53495; in 24 hours at room temperature, distilled water at 23°C) smaller than 2%, more preferably smaller than 1.5%, most preferably smaller than 0.7%.
  • the resistance of plastic materials against the action of water depends mostly on the chemical nature of the material and in the case when the plastic contains fillers, it is also dependent on the type of the filler. More hydrophilic materials will typically take up more material than hydrophobic materials.
  • the measure of water absorption is done by mass increase measurements of a material when a certain mass is immersed in distilled water at 23°C during 24hours. The measurement is described in the DIN norm 53495.
  • Table 1 Sacrificial substrate average standard deviation (Beam) thickness ( ⁇ m) thickness ( ⁇ m) Substrate according to the invention, a polyurethane foam with a porosity of 50% and water absorption of 0.6% 199 6 Valtron® 190 Clean Beam, with a water absorption smaller than 0.6% 177 3 DMT111GB, with a water absorption in the order of magnitude of 2% 178 19
  • the material that is removed by the sawing wire needs to be dragged away with the wire and ideally needs to be removed by the cleaning process in the saw.
  • a porous material has the advantage over a solid or filled material, that there is less material to be sawn and removed from the sawing channel (grooves formed in the material as result of the wire sawing action). It was observed, however, that in a water-based diamond wire wafering process this removal and cleaning process is additionally complicated by the fact that substrate material has the tendency to deposit in the sawing machine and especially on pulleys and wire guiding rolls. This deposit clogs the grooves of the wire guiding rolls and pulleys that are supposed to guide the wire and as such generates the risk for wire pairing or wire jumps which results in wafer thickness variation and bad wafer quality. In order to avoid this issue, the sacrificial substrate has to be made of a material with such properties that it will not deposit on the wire guiding rolls nor anywhere else in the cutting machine, but can be cleaned/removed with the used water-based cleaning system.
  • the filler(s) and/or the matrix material are mostly added to a base resin to make the material cheaper or to improve the properties of the material, as for example the E-modulus (see before). Furthermore, both, filler(s) and matrix material, can interact negatively with the diamond wire. Therefore, the material selection and the concentration of the filler versus matrix are very important. It has be now found that according to the invention the preferred sacrificial substrate has a filler content smaller than 30 mass%; more preferably smaller than 15 mass %; most preferably without fillers.
  • the hardness of the fillers should be lower or equal to 2 (cfr. Gypsum); most preferably smaller or equal to 1,5 (cfr. Graphite).
  • the thermal stability of the material is another important criteria for two reasons:
  • the first reason is that a typical temperature (measured with an IR camera) range measured in a waterbased diamond wire wafering process is about 40°C. For glycol based processes, this is believed to yield higher temperatures (most probably in the order of magnitude 50°C). One can imagine that locally, especially in the sawing channel, higher temperatures might be achieved. Therefore, it is important that the beam material remains dimensionally stable at higher temperatures.
  • the heat deflection temperature is measured though a three point bending test in which a sample is heated under constant bending load.
  • the heat deflection temperature is the temperature whereby a certain deflection is attained, in accordance to ISO 75 (ISO75 - method B). Therefore, the thermal stability of the substrate, particularly its heat deflection temperature should be larger than 50°C, more preferably 60°C, preferably even higher than 70°C, in order not to deform by heat created in the cutting process.
  • thermoplasts are proven very sensitive to this phenomenon. It is believed that this is due to the thermal energy created when the wire is cutting into the sacrificial substrate, as such softening the polymer matrix resulting in a contaminated polymer deposit on the wire. Therefore, duroplasts are more preferred.
  • a continuous diamond wire sawing process was executed in order to proof the sacrificial substrate in a production like use. Eight consecutive cuts were performed in a time frame of less than 48h on a Meyer Burger DS271 using Asahi diamond wire with specification 0.12 core wire diameter and 10-20 diamond grid.
  • the material used was 156mm x156mm mono Si and a wafer thickness of 180 ⁇ m was targeted.
  • the sacrificial substrate was a polyurethane foam with a porosity of 50%, E-modulus of 900MPa, heat deflection temperature of 77°C and a water absorption of 0.6%.
  • the coolant was Synergy DWS500 in a concentration of 5%, an in-line membrane filtration system from Pall Corporation was used to recycle the coolant during the entire test series.
  • the total thickness variation (TTV) of the first cut is the smallest since this is the only cut for which one starts off with a complete new unused diamond wire web.
  • TTV total thickness variation
  • Sacrificial substrates whose E-modulus is smaller than 6000 MPa (Mega Pascal), more preferably smaller than 5000 MPa, most preferably smaller than 4000 MPa.
  • Sacrificial substrates made of porous material with closed and or opened cells.
  • Sacrificial plates made of a foam (Polymer foams such as: polyurethane, polyisocanurate, polystyrene, polyolefin, PVC, epoxy, latex, silicone, fluoropolymer, phenolic foams or syntactic foamed plastics (spheroplasts), or ceramic foams or metal foams)
  • foam foams such as: polyurethane, polyisocanurate, polystyrene, polyolefin, PVC, epoxy, latex, silicone, fluoropolymer, phenolic foams or syntactic foamed plastics (spheroplasts), or ceramic foams or metal foams
  • This substrate may be used for both diamond wire (wire with fixed abrasive) as well as slurry based cutting.
  • the preferred material is a polyurethane which has the advantage that it is cheap and doesn't deposit onto the polyurethane coated wire guiding rolls or pulleys. As a consequence a foamed polyurethane with a moisture absorption ⁇ 0.7% (DIN 53495) is the most preferred material.
  • the polyurethane may be foamed, with a fraction of pores larger than 0.15, more preferably larger than 0.30, most preferably larger than 0.40; having an E-modulus smaller than 6000 MPa (according to ISO 178); more preferably an E-modulus smaller than 5000 MPa; and most preferably smaller than 4000 MPa.
  • pores is considered any kind of void space in a solid material, i.e. closed and/or opened cells.
  • the porous material may be a foam (polymer foams such as: polyurethane, polyisocanurate, polystyrene, polyolefin, PVC, epoxy, latex, silicone, fluoropolymer, phenolic foams or syntactic foamed plastics (spheroplasts), or ceramic foams or metal foams).
  • the polymer based sacrificial substrate for diamond wire wafering may preferably have a porosity larger than 0.15 or (in terms of percent; multiplying with 100%) 15%; more preferably larger than 0.30 or 30 %; most preferably larger than 0.40 or 40 %.
  • the inventive polymer substrate may have a water absorption (according to DIN 53495; submersed during 24 hours in distilled water at room temperature) smaller than 2% more preferably smaller than 1.5%; most preferably smaller than 0.7%. This is a typical measure for polymer materials. Glass will not absorb water. Solid epoxy resins might have an approximate value of 0.1 % or even lower. Whereas the logical trend of prior art would be to keep water absorption of the substrate to a minimal level, we found that there is flexibility in the boundaries of this criterion, because the mechanical properties of the substrate (E-modulus) can compensate for the deformation due to water absorption, also since porous materials, including foams typically have a higher water absorption.
  • the sacrificial substrate may have an E-modulus smaller than 6000 MPa (ISO 178, short term (Kurzzeit) bending test on balkshaped material with dimensions 80mm x 10mm x 4mm tested at room temperature 23°C); more preferably an E-modulus smaller than 5000 MPa; most preferably an E-modulus smaller than 4000 MPa.
  • the traditional substrate used according to prior art in wafering with slurry, glass has a typical E-modulus in the range of 50-90 GPa (Giga Pascal).
  • E-modulus values have been reported of greater than 15 GPa.
  • Ceramic substrates will typically have higher E-moduli e.g. calcite (CaCO3 in the range of 70-90 GPa) and as such ceramic filled plastics usually tend to enhance the E-modulus of the matrix plastic material.
  • Such reinforced epoxy plates with moduli above 10 GPa have been found in the prior art field.
  • the heat deflection temperature (http://www.matweb.com/reference/deflection-temperature.aspx), which should be larger than 50°C (ISO 75), more preferably 60°C, preferably even higher than 70°C, in order not to deform by heat created in the cutting process.
  • the deflection temperature is a measure of a materials resistance to distortion under a given load at elevated temperatures.
  • the deflection temperature is also known as the 'deflection temperature under load'.
  • Duroplasts are most preferred material in this embodiment.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
EP11190570A 2011-09-23 2011-11-24 Opfersubstrat zur Verwendung beim Schneiden von Wafern Withdrawn EP2572850A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP11190570A EP2572850A1 (de) 2011-09-23 2011-11-24 Opfersubstrat zur Verwendung beim Schneiden von Wafern
CN201280057521.XA CN103958140B (zh) 2011-09-23 2012-09-19 用于晶片切割的晶片切割牺牲基板
PCT/IB2012/054972 WO2013042055A1 (en) 2011-09-23 2012-09-19 Wafer cutting sacrificial substrate for use in wafer cutting
IN3101DEN2014 IN2014DN03101A (de) 2011-09-23 2012-09-19

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP11182589 2011-09-23
EP11190570A EP2572850A1 (de) 2011-09-23 2011-11-24 Opfersubstrat zur Verwendung beim Schneiden von Wafern

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EP2572850A1 true EP2572850A1 (de) 2013-03-27

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EP11190570A Withdrawn EP2572850A1 (de) 2011-09-23 2011-11-24 Opfersubstrat zur Verwendung beim Schneiden von Wafern

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EP (1) EP2572850A1 (de)
CN (1) CN103958140B (de)
IN (1) IN2014DN03101A (de)
WO (1) WO2013042055A1 (de)

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CN103522428A (zh) * 2013-10-16 2014-01-22 内蒙古中环光伏材料有限公司 一种太阳能硅片加工方法及装置

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