EP2571041A1 - Elektronenquelle - Google Patents

Elektronenquelle Download PDF

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Publication number
EP2571041A1
EP2571041A1 EP10851436A EP10851436A EP2571041A1 EP 2571041 A1 EP2571041 A1 EP 2571041A1 EP 10851436 A EP10851436 A EP 10851436A EP 10851436 A EP10851436 A EP 10851436A EP 2571041 A1 EP2571041 A1 EP 2571041A1
Authority
EP
European Patent Office
Prior art keywords
cathode
electron
angle
electron source
tip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP10851436A
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English (en)
French (fr)
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EP2571041A4 (de
EP2571041B1 (de
Inventor
Ryozo Nonogaki
Toshiyuki Morishita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
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Publication of EP2571041A1 publication Critical patent/EP2571041A1/de
Publication of EP2571041A4 publication Critical patent/EP2571041A4/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/13—Solid thermionic cathodes
    • H01J1/15—Cathodes heated directly by an electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06308—Thermionic sources
    • H01J2237/06316—Schottky emission

Definitions

  • the present invention relates to an electron source for example for use in scanning electron microscopes, Auger spectrometers, electron beam exposure devices and wafer inspection systems.
  • Electron sources having a needle-shaped electrode of tungsten single crystal and a coat layer of zirconium and oxygen formed thereon have been recently used to obtain a high-brightness electron beam having a life longer than hot cathodes (see Patent Documents 1 and 2).
  • a coat layer of zirconium and oxygen (hereinafter, referred to as ZrO coat layer) is formed on a needle-shaped cathode of tungsten single crystal with its axis in the ⁇ 100> direction.
  • the ZrO coat layer reduces the work function of the tungsten single crystal in the (100) plane from 4.5 eV to about 2.8 eV and makes only the fine crystal face formed in the tip region of the cathode in the (100) plane function as the electron emission region, and thus, such a device has an advantage that it can emit electron beam higher in brightness and yet it has longer life than conventional hot cathodes. It also has an advantage that it is more stabilized than cold-field-emission electron sources and easier to handle, as it operates even under milder vacuum.
  • a needle-shaped tungsten cathode having the crystal face in the ⁇ 100> direction and emitting electron beam is connected at a particular position to a tungsten filament formed on conductive terminals fixed to an electrical porcelain for example by welding.
  • a supply source of zirconium and oxygen is formed locally on the cathode (for example, see Figure 2 ).
  • the surface of the cathode is covered with a ZrO coat layer.
  • the tip region of the cathodes used in conventional ZrO/W electron sources is placed and used in the region between a suppressor electrode and an extraction electrode (for example, see Figure 3 ).
  • a high voltage negative to the extraction electrode is applied to the cathode and a voltage negative to cathode of about hundreds of volts additionally to the suppressor electrode, thus suppressing emission of thermoelectrons from the filament.
  • Auger spectrometers and wafer inspection systems are operated at a high angular current density of about 0.4 mA/sr. Operation at further higher angular current density is desired in such applications emphasizing throughput, and operation at a high angular current density of 1.0 mA/sr may also be required.
  • a main object of the present invention is to provide an electron source satisfying the technical requirements that it should operate at high angular current density without increase in extraction voltage and the amount of the dump current causing vacuum deterioration should be reduced in a well-balanced manner and an electron beam apparatus employing the same.
  • the inventors have found that it is possible, by adjusting the angle of the cathode to the ⁇ 100> direction in a particular range, to emit the strong electron beam from the terminal of the (100) crystal face, which was hitherto considered undesirable dump current in traditional technology, in the direction almost in parallel with the cathode axis, and made the present invention. It also became possible in this way to provide a technology that can satisfy in a well-balanced manner both the technical requirements: (1) the device should operate at a high angular current density of 1.0 mA/sr or more even without increase in extraction voltage and (2) the amount of the dump current, which leads to vacuum deterioration, should be suppressed.
  • the present invention provides an electron source having a cathode of tungsten single crystal and a diffusion source formed on the central region of the cathode, wherein The angle between the axial direction of the cathode and the ⁇ 100> direction of the cathode is adjusted so that the electron emitted from the boundary region between the (100) and (110) planes formed on the cathode tip is directed almost in parallel with the axis of the cathode.
  • the angle between the axial direction of the cathode and the ⁇ 100> direction of the cathode is preferably 22.5 ⁇ 10°.
  • the crystal orientation in the axial direction of the cathode is preferably in the ⁇ 310> direction.
  • the diffusion source above preferably contains at least zirconium oxide.
  • the present invention also provides an electron beam apparatus, comprising an electron source having a cathode of tungsten single crystal and a diffusion source formed on the central region of the cathode, wherein the angle between the axial direction of the cathode and the ⁇ 100> direction of the cathode is adjusted so that the electron emitted from the boundary region between the (100) and (110) planes formed on the cathode tip is directed almost in parallel with the axis of the cathode.
  • the angle between the axial direction of the cathode and the ⁇ 100> direction of the cathode is 22.5 ⁇ 10° or the crystal orientation in the cathode axial direction is in the ⁇ 310> direction.
  • the electron beam apparatus is preferably an electron beam lithography system, Auger spectrometer or wafer inspection system.
  • the electron source according to the present invention comprises an electrical porcelain 5, two conductive terminals 4 connected to the electrical porcelain 5, a filament 3 connected to both of the conductive terminals 4, a rod-shaped cathode 1 connected to the filament 3, and a diffusion source 2 formed on the central region of the cathode 1.
  • an electron beam-emitting needle-shaped tungsten cathode 1 is bonded, for example by welding, to the tungsten filament 3 that is connected to the conductive terminals 4 fixed to the electrical porcelain 5, at a particular position.
  • a supply source 2 of zirconium and oxygen is preferably formed partially on the cathode 1 according to the present invention.
  • the surface of the cathode 1 according to the present invention is preferably covered with a ZrO coat layer that is not shown in Figure.
  • the tip region of the cathode 1 of the electron source according to the present invention is used, as it is placed at the position between a suppressor electrode 8 and an extraction electrode 9.
  • a high voltage negative to the extraction electrode 9 is applied to the cathode 1 and a voltage of about hundreds of volts negative to the cathode 1 is applied to the suppressor electrode 8, for suppression of emission of thermoelectrons from the filament 3.
  • the electron source according to the present invention has a cathode 1, of which the angle between the axial direction and the ⁇ 100> direction thereof is adjusted so that the electrons emitted from the boundary region between the (100) plane and the (110) plane formed on the cathode tip are directed almost in parallel with the axis of the cathode.
  • Fig. 4 is a schematic view illustrating a cathode tip of the electron source in the present embodiment of the present invention.
  • electric field When electric field is applied to the cathode material for use in the present invention in a vacuum apparatus, it causes mass migration along the surface toward the tip, by the electrostatic force acting as driving force, forming on the cathode tip (100) and (110) crystal faces close to each other stabilized in surface energy (for example, see Fig. 1 ).
  • the work function of the (100) plane is reduced by the coat layer formed by diffusion from the diffusion source formed on the central region of the cathode, permitting emission of electrons from the (100) plane.
  • the (100) and (110) planes form a boundary then at a particular angle, and the electric field strength increases more in the boundary region than in the flat area of the (100) plane, permitting emission of electrons from the boundary region at high angular current density. Because the angle between the (100) plane and the direction normal to the (110) plane is 45°, electrons are emitted at higher strength, in the boundary region, in the direction of the bisector of the respective normal directions, i.e., in the direction at an angle of 22.5° from the ⁇ 100> normal direction (see Fig. 4 ).
  • the angle between the ⁇ 310> direction and the ⁇ 100> direction is 18.4° and if it is approximately 18.4° ⁇ 3°, it is in the range of 22.5°+10°, and thus, such a device provides the advantageous effects of the present invention.
  • a single crystal tungsten in the ⁇ 310> direction is also advantageous in that it is possible to determine the direction and adjust the direction during preparation of the single crystal easily, for example, by X-ray diffraction.
  • a cathode 1 of tungsten single crystal (cathode material) prepared with the axial direction inclined at an angle of 22.5° ⁇ 10° to the ⁇ 100> direction is bonded to conductive terminals 4 brazed to an electrical porcelain 5 via a tungsten filament 3 by welding, to make it heatable by application of current and the tip region of the cathode 1 is sharpened by electropolishing.
  • the tip region of the cathode 1 is preferably sharpened then to a cathode tip curvature radius of 0.2 to 1.0 ⁇ m, more preferably of 0.4 to 0.6 ⁇ m.
  • zone-melting recrystallization method is known as the method of producing a cathode material such as tungsten single crystal.
  • a cathode material such as tungsten single crystal.
  • a supply source of metal and oxygen which has a function to reduce the work function of the electron-emitting face, is formed on the cathode 1.
  • a supply source of metal and oxygen such as metal oxide, is dispersed in an organic solvent (such as isoamyl acetate) used as dispersion medium. The mixture is pulverized and homogenized, for example in a mortar, into a slurry, which is then applied. After the application, electric current is applied to the filament 3 under an extreme vacuum at 2 to 4 ⁇ 10 -10 Torr (3 to 5 ⁇ 10 -8 Pa), heating the cathode 1 up to 1700 to 1900K. Subsequently, oxygen gas is introduced into the system, and the metal is oxidized under an oxygen atmosphere at 2 to 4 ⁇ 10 -6 Torr (3 to 5 ⁇ 10 -4 Pa), forming a supply source of metal and oxygen.
  • An electron source having a supply source of a metal oxide containing one or more elements selected from the group consisting of zirconium (Zr), titanium (Ti), hafnium (Hf), scandium (Sc), yttrium (Y), lanthanoid series elements, barium (Ba), strontium (Sr) and calcium (Ca) can be used favorably as an electron source for hot-cathode field-emission electron sources.
  • a zirconium oxide-containing supply source is preferable, as it can emit electrons reliably at an operating temperature of 1800K, when used.
  • a paste of zirconium hydride pulverized and mixed with an organic solvent is applied partially on a cathode, the cathode is heated under an oxygen atmosphere at about 3 ⁇ 10 -6 Torr (4 ⁇ 10 -4 Pa) for thermal decomposition to ZrH 2 .
  • the cathode is further oxidized, to form a supply source of zirconium and oxygen.
  • the cathode 1 having the supply source formed thereon is then placed in the region between an extraction electrode 7 and a suppressor electrode 6, a high voltage of several kV (2 to 4 kV) negative to the extraction electrode 7 is applied to the cathode 1.
  • a voltage of hundreds of volts (-200 to -400V) negative to the cathode 1 is applied to the suppressor electrode 6 and the cathode 1 is heated to 1500 to 1900K (favorably, 1700 to 1900K) under the extreme vacuum described above.
  • the (100) and (110) crystal faces, which are stabilized in surface energy, are formed close to each other on the cathode tip.
  • the emission current becomes stabilized when the heat treatment is continued for several hours (about 1 to 4 hours).
  • the electrons emitted from the region close to the boundary between the (100) and (110) planes are directed almost in parallel with the cathode axis. It is thus possible to obtain an electron beam having a high angular current density of 1 mA/sr or more and to reduce the dump current that causes vacuum deterioration.
  • the electron source according to the present invention can be used in electron beam apparatuses (electronic devices) such as scanning electron microscopes, transmission electron microscopes, Auger spectrometers, surface analysis apparatuses, electron beam exposure devices and semiconductor wafer inspection systems.
  • electron beam apparatuses electronic devices
  • scanning electron microscopes transmission electron microscopes
  • Auger spectrometers surface analysis apparatuses
  • electron beam exposure devices semiconductor wafer inspection systems.
  • throughput is significantly important for example for electron beam lithography systems
  • Auger spectrometers and wafer inspection systems they are operated at a high angular current density of about 0.4 mA/sr. Operation at further higher angular current density is desired in such applications demanding high throughput, and operation at an even higher angular current density of 1.0 mA/sr may also be required.
  • the electron source according to the present invention which can operate even at a high angular current density of 1.0 mA/sr or more without increase in extraction voltage, can be used favorably, in particular, in electron beam lithography systems, Auger spectrometers and wafer inspection systems.
  • Example 1 will be described, based on Figs. 1 to 4 .
  • a filament 3 of V-shaped tungsten wire having a diameter of 0.125 mm was fixed by spot-welding to a pair of conductive terminals 4 brazed to an electrical porcelain 5 shown in Fig. 2 .
  • a single crystal tungsten cathode 1 in the ⁇ 310> direction was spot-welded to the filament 3.
  • the tip of a cathode 1 was then sharpened to a tip curvature radius of 0.5 ⁇ m by electropolishing.
  • a diffusion source 2 shown in Fig. 2 is placed on the region close to the center of the tungsten single crystal cathode 1.
  • a paste of a mixture of pulverized zirconium hydride and isoamyl acetate was coated locally on the cathode 1.
  • the cathode was placed in an ultrahigh-vacuum apparatus.
  • the apparatus was evacuated to an ultra-high vacuum of 3 ⁇ 10 -10 Torr (4 ⁇ 10 -8 Pa), and the single crystal rod 1 was heated to 1800K by application of voltage to the filament 3 for thermal decomposition of zirconium hydride into metal zirconium.
  • Oxygen gas was then fed into the apparatus to a pressure of 3 ⁇ 10 -6 Torr (4 ⁇ 10 -4 Pa) for oxidation of the metal zirconium, to give a diffusion source 2 of zirconium and oxygen (zirconium oxide).
  • the tip of the cathode 1 obtained was placed at a position between suppressor electrode 6 and extraction electrode 7.
  • the distance between the tip of the cathode 1 and the suppressor electrode 6 was adjusted to 0.25 mm and the distance between the suppressor electrode 6 and the extraction electrode 7 to 0.6 mm, and the pore size of the extraction electrode 7 was adjusted to 0.6 mm and the pore size of the suppressor electrode 6 to 0.4 mm.
  • both terminals of the filament 3 were connected to a filament-heating power source 12, which was in turn connected to a high-pressure power source 14.
  • the suppressor electrode 6 was connected to a bias power source 13.
  • the measurement apparatus was evacuated to an ultra-high vacuum of 3 ⁇ 10 -10 ) Torr(4 ⁇ 10 -8 Pa) and the filament current was controlled, by measurement with a radiation thermometer, to make the cathode temperature adjusted to 1800K when electron emission started.
  • a bias voltage Vb of -300 V with respect to the cathode 1 was applied to the suppressor electrode 6, thus suppressing the thermal electrons emitted from the filament 3.
  • a high voltage negative to the extraction electrode 7, i.e., extraction voltage Vex was thereafter applied to the cathode 1.
  • the electron beam 15 emitted from the tip of the cathode 1 advances through the hole of the extraction electrode 7 and reaches radioscopic screen 8.
  • the radioscopic screen 8 has an aperture (small opening) 9 at the center and the probe current Ip passing through the hole and reaching cup-shaped electrode 10 is quantified with a microammeter 11.
  • the solid angle which is calculated from the distance between the aperture 9 and the tip of cathode 1 and the internal diameter of the aperture 9, is designated as ⁇
  • the angular current density is defined as Ip/ ⁇ .
  • the aperture 9 and the cup-shaped electrode 10 were formed movable externally from out of the vacuum system, for measurement of the angular current density distribution.
  • the change in probe current Ip when the aperture 9 was moved was measured for determination of the angular current density distribution.
  • the results of the angular current density distribution measurement when extraction voltages Vex's of 4.00 kV and 3.82 kV were applied to the extraction electrode 7 are shown in Fig. 5 .
  • the extraction voltage when the angular current density along the axis is 1 mA/sr and the entire current (total current) emitted then from the cathode 1 are shown in Table 1.
  • the electron micrograph of the cathode tip of the electron source of the Example after test is shown in Fig. 1 .
  • the angular current density distribution was determined by a method similar to the Example above using an electron source prepared by the same production method as that in the Example, except that a single crystal tungsten in the ⁇ 100> direction was used as the cathode 1 and the cathode tip region was sharpened to an tip curvature radius of 1.0 ⁇ m by electropolishing.
  • the results of the angular current density distribution measurement when an extraction voltage Vex of 6.94 kV was applied to the extraction electrode 7 are shown in Fig. 6 .
  • the extraction voltage when the angular current density along the axis is 1 mA/sr and the entire current (total current) emitted then from the cathode 1 are shown in Table 1.
  • the electron micrograph of the cathode tip of the electron source of the Comparative Example after test is shown in Fig. 7 .
  • One of the maximum points in angular current density is positioned almost on the axis, and it is possible in such an electron beam apparatus to use the region where the angular current density is largest effectively. It is because the angle between the axial direction of the cathode and the ⁇ 100> direction of the cathode is adjusted. It was also found that, even at an extraction voltage Vex of 4.0 kV, which is lower than 5 kV, operation at a high angular current density of 1.5 mA/sr is possible.
  • the angular current density distribution of Comparative Example in Fig. 6 shows that there are two maximum points in angular current density, similarly to Examples, but electron emission occurs both from the two positions at a radian angle of about 0.2 from the axis, indicating that the maximum regions cannot be used effectively in the electron beam apparatus.
  • the extraction voltage Vex is 6.94 kV, which is larger than 5 kV
  • the entire currents (total currents) emitted from the cathode 1 at the extraction voltage when the maximum value of the angular current density distribution along the axis is 1 mA/sr in the Example and the Comparative Example are compared in Table 1.
  • the total current in the Comparative Example was 66 ⁇ A, while that of the Example is lower at 192 ⁇ A, indicating that the device became resistant to vacuum deterioration caused by the gas released from surrounding devices and also to electric discharge, thus emitting electron beam more reliably.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Solid Thermionic Cathode (AREA)
  • Cold Cathode And The Manufacture (AREA)
EP10851436.5A 2010-05-10 2010-11-30 Elektronenquelle Active EP2571041B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010108681A JP5363413B2 (ja) 2010-05-10 2010-05-10 電子源
PCT/JP2010/071340 WO2011142054A1 (ja) 2010-05-10 2010-11-30 電子源

Publications (3)

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EP2571041A1 true EP2571041A1 (de) 2013-03-20
EP2571041A4 EP2571041A4 (de) 2014-08-20
EP2571041B1 EP2571041B1 (de) 2017-04-12

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EP10851436.5A Active EP2571041B1 (de) 2010-05-10 2010-11-30 Elektronenquelle

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US (1) US8593048B2 (de)
EP (1) EP2571041B1 (de)
JP (1) JP5363413B2 (de)
TW (1) TWI489508B (de)
WO (1) WO2011142054A1 (de)

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Publication number Priority date Publication date Assignee Title
KR102664774B1 (ko) * 2017-12-13 2024-05-10 어플라이드 머티리얼즈 이스라엘 리미티드 하전 입자 빔 소스 및 하전 입자 빔 소스를 조립하기 위한 방법
CN111048372B (zh) 2018-10-12 2021-04-27 中国电子科技集团公司第三十八研究所 一种电子源工作方法
EP3920206B1 (de) 2019-01-30 2023-08-09 National Institute for Materials Science Emitter, elektronenkanone damit und elektronisches gerät

Citations (3)

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EP0732720A1 (de) * 1995-03-14 1996-09-18 Hitachi, Ltd. Kathode, elektronenstrahlemittierende Vorrichtung mit Verwendung derselben, und Verfahren zur Herstellung der Kathode
JP2009205800A (ja) * 2006-06-19 2009-09-10 Denki Kagaku Kogyo Kk 電子源
WO2009153939A1 (ja) * 2008-06-20 2009-12-23 株式会社日立ハイテクノロジーズ 荷電粒子線装置、及びその制御方法

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DE3039283A1 (de) 1979-10-19 1981-05-14 Hitachi, Ltd., Tokyo Feldemissionskathode und verfahren zu ihrer herstellung
JPS5661733A (en) * 1979-10-24 1981-05-27 Hitachi Ltd Field emission cathode and its manufacture
JP3260204B2 (ja) 1992-06-24 2002-02-25 電気化学工業株式会社 熱電界放射陰極
JPH0612972A (ja) 1992-06-24 1994-01-21 Denki Kagaku Kogyo Kk 熱電界放射電子銃
JPH0778552A (ja) * 1993-09-09 1995-03-20 Hitachi Ltd 電界放射型陰極およびその製造方法
JP4210756B2 (ja) * 2003-12-24 2009-01-21 独立行政法人産業技術総合研究所 カーボンナノチューブ構造体
US7969080B2 (en) * 2006-09-05 2011-06-28 Denki Kagaku Kogyo Kabushiki Kaisha Electron source
JP4971342B2 (ja) * 2006-09-27 2012-07-11 電気化学工業株式会社 電子源
JP4959723B2 (ja) * 2007-01-11 2012-06-27 株式会社アドバンテスト 電子銃及び電子ビーム露光装置
US7888654B2 (en) 2007-01-24 2011-02-15 Fei Company Cold field emitter
JP2008270017A (ja) * 2007-04-23 2008-11-06 Tohken Co Ltd ナノチップ電界放射電子源
US8436524B2 (en) * 2007-05-16 2013-05-07 Denki Kagaku Kogyo Kabushiki Kaisha Electron source
US7723699B2 (en) * 2007-06-26 2010-05-25 Varian Semiconductor Equipment Associates, Inc. Cathode having electron production and focusing grooves, ion source and related method
JP2011076753A (ja) * 2009-09-29 2011-04-14 Denki Kagaku Kogyo Kk 電子源及び電子機器

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EP0732720A1 (de) * 1995-03-14 1996-09-18 Hitachi, Ltd. Kathode, elektronenstrahlemittierende Vorrichtung mit Verwendung derselben, und Verfahren zur Herstellung der Kathode
JP2009205800A (ja) * 2006-06-19 2009-09-10 Denki Kagaku Kogyo Kk 電子源
WO2009153939A1 (ja) * 2008-06-20 2009-12-23 株式会社日立ハイテクノロジーズ 荷電粒子線装置、及びその制御方法

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Publication number Publication date
US8593048B2 (en) 2013-11-26
JP5363413B2 (ja) 2013-12-11
TW201142897A (en) 2011-12-01
EP2571041A4 (de) 2014-08-20
WO2011142054A1 (ja) 2011-11-17
TWI489508B (zh) 2015-06-21
US20130049568A1 (en) 2013-02-28
EP2571041B1 (de) 2017-04-12
JP2011238459A (ja) 2011-11-24

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