EP2517271A1 - Système de diode électroluminescente, dispositif de rétroéclairage et dispositif d'affichage - Google Patents

Système de diode électroluminescente, dispositif de rétroéclairage et dispositif d'affichage

Info

Publication number
EP2517271A1
EP2517271A1 EP10795318A EP10795318A EP2517271A1 EP 2517271 A1 EP2517271 A1 EP 2517271A1 EP 10795318 A EP10795318 A EP 10795318A EP 10795318 A EP10795318 A EP 10795318A EP 2517271 A1 EP2517271 A1 EP 2517271A1
Authority
EP
European Patent Office
Prior art keywords
luminescence
light
luminescence diode
conversion element
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10795318A
Other languages
German (de)
English (en)
Inventor
Thorsten Kunz
Stephan Kaiser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of EP2517271A1 publication Critical patent/EP2517271A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present application relates to a Lumineszenzdiodenan Aunt, a backlighting device and a
  • a luminescence diode arrangement is specified with a first luminescence diode chip, a second luminescence diode chip, and a luminescence conversion element.
  • a "luminescence diode chip" is used in the present context
  • Radiation generation provided semiconductor layer sequence understood, for example, a light-emitting diode chip or a laser diode chip.
  • a rear ⁇ leuchtungsvorraum specified with the Lumineszenzdiodenan Aunt which is designed in particular for backlighting a display device.
  • the backlight ⁇ device contains in particular a plurality of
  • the luminescence diode arrangements contained in the backlighting device are in particular identical in construction. According to at least one further aspect, a
  • the display device indicated with the backlight device.
  • the display device may be a liquid crystal display device (LCD, Liquid Crystal
  • the backlighting device acts like an LCD TV.
  • the backlighting device is designed to backlight a light valve arrangement of the LCD.
  • the first luminescence diode chip is designed to emit blue light.
  • the second luminescence diode chip is designed in particular for the emission of green light.
  • it comprises a semiconductor layer sequence ⁇ , the emission of green light
  • the luminescence conversion element is in particular for the conversion of a part of the first
  • Luminescence diode chip emitted blue light formed in red light. Zeck Distincture emits the first
  • the second luminescence diode chip During operation of the luminescence diode arrangement, the second luminescence diode chip emits green light during operation of the luminescence diode arrangement, and the luminescence conversion element emits red light during operation of the luminescence diode arrangement.
  • the fact that the first luminescence diode chip emits blue light in the present context means in particular that the electromagnetic radiation emitted by the first luminescence diode chip during operation has a dominant wavelength in the blue spectral range, in particular between 420 nm and 490 nm, preferably between 430 nm and 480 nm, wherein the Borders are included.
  • the dominant wavelength is between 435 nm and 445 nm with the boundaries included, for example, it has a value of 440 nm.
  • between 445 nm and 455 nm with the limits included, for example, it has a value of 450 nm.
  • That the semiconductor layer sequence of the second luminescence diode chip ⁇ means emits green light in the present context especially that the light emitted from the semiconductor layer sequence during operation electromagnetic
  • a dominant wavelength in the green spectral range ⁇ in particular between 490 nm and 575 nm, preferably ⁇ be between 500 nm and 550 nm, has the limits being included in each case.
  • ⁇ in particular between 490 nm and 575 nm, preferably ⁇ be between 500 nm and 550 nm, has the limits being included in each case.
  • the luminescence conversion element converts blue light into red light in the present context means in particular that the luminescence conversion element
  • the intensity maximum of the secondary radiation has a wavelength between 650 nm and 750 nm, preferably between 610 nm and 640 nm, with the boundaries each included.
  • the LED array is at least one
  • the blue light of the first LED chip Formed for the emission of mixed light, the blue light of the first LED chip, green light of the second LED chip and red light of the
  • the mixed light is composed of blue light of the first luminescence ⁇ diode chip, green light of the second LED chips and red light of the luminescence conversion.
  • the mixed light causes a white color impression.
  • the mixed light preferably has a color location in the white area of the CIE standard color chart.
  • the CIE standard color chart also called CIE chart, is used for
  • CIE Commission Internationale de l'Eclairage
  • the luminescence conversion element For converting the blue light of the first LED chip into red light, the luminescence conversion element comprises at least one embodiment
  • At least one phosphor for example one
  • the luminescence conversion element can consist of the phosphor or it can be a matrix material
  • the luminescence conversion element comprises a ceramic material which consists of the luminescent substance or several luminescent substances or at least one Contains phosphor.
  • the luminescence conversion element can also be a, for example electrophoretically deposited, powder layer with one or more phosphors
  • particles can be at least one
  • Phosphor in a matrix material for example a
  • Epoxy resin or a silicone material be embedded.
  • the mixed light emitted by the luminescence diode arrangement during operation has an intensity maximum in the green spectral range.
  • the luminescence diode arrangement is preferably free of a luminescent substance with a luminescent diode
  • the luminescence element does not contain a ⁇ phosphor which emits in the operation of the luminescence diode arrangement ⁇ secondary light having an intensity peak in the green spectral range.
  • the so-called "L50 / B50" threshold is greater than 20,000 operating hours.
  • L50 / B50 is known in the art in principle.
  • a “L50 / B50" threshold of over 20,000 operating hours means that of a variety of similar ones Luminescence diode arrangements 50% of the light-emitting diode arrangements a life of at least 20,000
  • Luminance of the light emitted at 0 operating hours In another embodiment, the so-called
  • the green light emitted by the second LED chip in one embodiment in the CIE standard color chart, has a color locus whose coordinates [xg, yg] are: xg -S 0.15 and yg> 0.7.
  • coordinates [xg, yg] 0 -S x G ⁇ 0.15 and 0.7 ⁇ y G ⁇ 0.9.
  • phosphors for example orthosilicate phosphors in the CIE standard color chart, color loci which are further removed from the color spectrums of the spectral colors of the green spectral range.
  • they are so opposite
  • Light emitting diode arrays containing green light phosphors are capable of achieving larger gamut display devices in the light emitting diode array according to the present disclosure.
  • the gamut designates in particular the amount of all the colors which the display device can represent.
  • the gamut corresponds to the CIE diagram limited area, for example, a triangular area.
  • the display device can only reproduce color stimuli that are within this area.
  • Lumineszenzdiodenan interprets the backlighting device emitted mixed light scores a Gamut whose
  • Area represented by the CIE standard color chart is at least 100%, preferably at least 110%, particularly preferably at least 120% of the area of the NTSC color space. As NTSC color space is in the
  • the luminescence diode arrangement for emitting the mixed light is one
  • the first luminescence diode chip is covered at least in places by the luminescence conversion element in a plan view of the front side.
  • the second LED chip can from the
  • Lumineszenzkonversionselement be uncovered or be at least partially covered by the luminescence conversion element.
  • the luminescence diode arrangement is advantageous
  • the second LED chip at least in places of the
  • Lumineszenzkonversionselement is covered is that Luminescence conversion element in particular additionally designed to convert part of the electromagnetic radiation emitted by the second LED chip, in particular a part of the green light emitted by the semiconductor layer sequence, into red light.
  • the luminescence conversion element-in particular by means of a further phosphor- is configured to convert blue light of the first luminescence diode chip and / or green light of the second luminescence diode chip into yellow light.
  • the luminescence conversion element is a separately manufactured
  • Converter plate which may be formed on the first luminescence diode chip or applied thereto,
  • the converter wafer is then on a front-side main surface of the first
  • Luminescence diode chips applied or formed.
  • the conversion material is, in particular, not introduced into a potting, with which the luminescence diode chip is potted.
  • the luminescence conversion element is designed as a separately manufactured cap which, in addition to the front-side main surface of the first luminescence diode chip, can also at least locally cover or cover its side flanks. That is, in this case also side surfaces of the LED chip downstream of the luminescence conversion element.
  • a capped luminescence conversion element it is In particular, it is possible that a gap is formed between the luminescence diode chip and the luminescence conversion element, which gap can be filled, for example, with air. In this case, the luminescence conversion element is heated less in operation, as if a luminescence conversion element find use with the
  • Lumineszenzdiodenchip is in direct contact.
  • Aging of the luminescence conversion element can be slowed down in this way.
  • all luminescence diode chips of the luminescence diode arrangement or of the backlighting device emit visible light with an intensity maximum which has a wavelength outside the red spectral range, in particular in the blue and / or green spectral range.
  • the LED chips of all luminescence ⁇ diode arrays of backlighting - - In a development all the LED chips Lumineszenzdiodenan extract based on the same semiconductor material, in particular on a nitride compound semiconductor material such as AlGaInN.
  • nitride compound semiconductor material in the present context means that the luminescence diode chips or at least a part thereof, particularly preferably at least one active zone and / or the growth substrate wafer, a nitride compound semiconductor material, preferably AlGalnN - that is Al n Ga m In ] __ n _ m N, where 0 ⁇ n ⁇ 1, 0 ⁇ m ⁇ 1 and n + m ⁇ 1 - has or consists of this.
  • This material must have a mathematically precise interaction ⁇ reduction according to the above formula is not mandatory. Rather, it may, for example, one or more dopants as well
  • the Lumineszenzdiodenan Aunt contains according to the present disclosure preferably no red-emitting LED chips that need to be operated ⁇ voltage range in another operation emitting a blue or green LED chips, based on the connection ⁇ semiconductor material AlInGaN. In this way, the luminescence diode arrangement is easier and can be controlled with a less expensive control unit.
  • the luminescence diode arrangement and / or the backlighting device has a control unit, which is designed to be the first
  • the control unit contains a color sensor and / or a temperature sensor.
  • the luminescence diode arrangement has an optoelectronic component which comprises the first
  • Lumineszenzdiodenchip, the second LED chip and the luminescence conversion element comprises.
  • Optoelectronic component has, for example, at least two external electrical connections to the electrical
  • the first and second LED chip has a chip carrier and / or a component housing.
  • the first luminescence diode chip, the second luminescence diode chip and the luminescence conversion element are preferably arranged on the chip carrier and / or in the component housing.
  • the component has a component envelope, with which the first and the second LED chip are preferably encapsulated on the chip carrier and / or in the component housing.
  • the component envelope contains, for example, a
  • Radiation-permeable potting compound In a further development, the radiation-permeable potting compound also encapsulates the luminescence conversion element.
  • the radiation-permeable potting compound is the matrix material in which the phosphor or the
  • Phosphors of the luminescence conversion element are embedded.
  • the luminescence diode arrangement has a first optoelectronic component, which comprises the first luminescence diode chip. In addition, it has a second, separate, optoelectronic component which comprises the second luminescence diode chip.
  • Lumineszenzkonversionselement of the first opto ⁇ electronic component comprises or a first part of the
  • Luminescence conversion element is of the first opto ⁇ electronic component and a second part of the luminescence conversion element of the second optoelectronic
  • Component comprises.
  • the first part of the Lumineszenzkonversions ⁇ elements arranged in a reflector trough of the first opto ⁇ electronic component, wherein the reflector trough is formed for example by a recess of a component housing of the first optoelectronic component.
  • the second luminescence diode chip and optionally the second part of the luminescence conversion element are arranged, for example, in a reflector trough of the second optoelectronic component, which in particular is formed by a recess of a
  • Component housing of the second optoelectronic component is formed.
  • Figure 1A a schematic plan view of a
  • Figure 2 a schematic plan view of a
  • Figure 3A a schematic plan view of a
  • FIG. 4A a schematic plan view of a section of a luminescence diode arrangement according to a fourth exemplary embodiment, FIG.
  • FIG. 5A a schematic plan view of a section of a luminescence diode arrangement according to a fifth exemplary embodiment
  • FIG. 6 is a schematic plan view of a section of a luminescence diode arrangement according to a sixth exemplary embodiment
  • FIG. 7 a schematic plan view of a section of a luminescence diode arrangement according to a seventh exemplary embodiment
  • FIG. 8 shows a schematic plan view of a section of a backlighting device according to FIG.
  • Figure 10 a CIE diagram with different color spaces and the color loci of the red light and the green
  • FIG. 12 shows a CIE diagram with the color space achievable by the display device according to the exemplary embodiment of FIG.
  • FIGS. 1A and 1B show a light-emitting diode arrangement according to a first exemplary embodiment.
  • FIG. 1A shows a schematic plan view of a front side 100 of FIG. 1A
  • FIG. 1B shows a
  • the LED array 1 includes a first one
  • Luminescence diode chip 2 and a second luminescence diode chip 3 are in a recess 50 of a common
  • Component housing 5 is arranged.
  • the recess 50 may also be referred to as a chip pan. It may, for example, constitute a reflector trough and / or a potting trough.
  • the first luminescence diode chip 2 and the second luminescence diode chip 3 are both based on the Lumineszenzdiodenan elbow 1 according to the first embodiment
  • the luminescence diode chips 2, 3 are light-emitting diode chips which are each provided for emitting radiation from one of their main surfaces.
  • the first luminescence diode chip 2 has an epitaxial semiconductor layer sequence which is provided for emission of blue light.
  • the electromagnetic emitted by the semiconductor layer sequence of the first LED chip 2 during operation of the LED array has electromagnetic Radiation a dominant wavelength in the blue
  • Spectral range for example at one wavelength
  • nm between 430 nm and 480 nm, with the limits included. In the present case, it has a value between 445 and 455 nm, for example of 450 nm. In one variant, it has a value between 435 nm and 445 nm, for example of 440 nm.
  • the second luminescence diode chip 3 has an epitaxial semiconductor layer sequence which is designed to emit green light, in particular having a dominant wavelength between 490 nm and 575 nm, preferably between 500 nm and 550 nm, the boundaries being included in each case.
  • the dominant wavelength of the green light emitted by the second LED chip 3 has a value of 525 nm.
  • the luminescence diode arrangement has a luminescence conversion element 4.
  • the luminescence conversion element 4 is applied to the first luminescence diode chip 2. For example, it is in the
  • Lumineszenzkonversionselement 4 to a converter plate, which is formed on the first LED chip 2 or applied to this.
  • the converter ⁇ plate is applied on a front main surface of the first LED chip 2 or formed.
  • the luminescence conversion element 4 can also be used as a cap
  • the first luminescence diode chip 2 with the luminescence conversion element 4 and the second luminescence diode chip 2 are in one embodiment with a translucent, in particular transparent, potting compound wrapped, which is filled in the recess 50.
  • the luminescence conversion element 4 is at the first
  • Embodiment of the potting compound different which is arranged as a component envelope in the recess 50 to encapsulate the LED chips 2.3.
  • the luminescence conversion element 4 is in particular integrated with the first luminescence diode chip 2 and is mounted together with the epitaxial semiconductor layer sequence of the first luminescence diode chip 2 in the recess 50 of the component housing 5.
  • the upper ⁇ surface of the recess 50 is not limited in the Lumineszenzdiodenan angel 1 according to the first embodiment to the
  • the luminescence conversion element or the luminescence conversion element 4 ⁇ limited only with a back, the first LED chip 2 rotating, and in particular narrow edge region of the component housing 5 at.
  • the luminescence conversion element 4 contains at least one phosphor or consists of at least one phosphor.
  • the at least one phosphor is contained in a ceramic material or the luminescence conversion element 4 consists of a
  • Luminescent ceramic containing, for example, an aluminum nitride.
  • the aluminum nitride for example, aluminum nitride.
  • Luminescence Conversion Element Particles of the phosphor or of the phosphors embedded in a matrix material for example a thermoset material or a thermoplastic material.
  • a matrix material for example a thermoset material or a thermoplastic material.
  • the luminescence conversion element 4 is - in particular by means of the phosphor or at least one of
  • Phosphors - designed to convert a portion of the light emitted from the first LED chip 2 blue light in red light.
  • the boundaries are included.
  • the intensity maximum of the secondary radiation has a
  • the luminescence conversion element 4 contains an aluminum nitride-based phosphor which is suitable for absorbing primary radiation from the blue spectral range and for emitting secondary radiation from the red
  • the phosphor is that designated BR1 (MCC-A1N) or BR101D from Mitsubishi Chemical
  • the luminescence conversion element contains a further phosphor, in particular a garnet phosphor such as YAG: Ce, which is designed to emit secondary radiation from the yellow spectral range.
  • the secondary radiation of the further phosphor has a wavelength between 550 nm and 600 nm, for example between 565 nm and 585 nm, wherein the Borders are included.
  • luminescence conversion element 4 is free of a phosphor, the secondary radiation with a
  • FIG. 10 shows the color loci of the red secondary radiation emitting phosphor and the semiconductor layer sequence of the second LED chip 3 of the luminescence diode arrangement 1 according to the first exemplary embodiment in the CIE diagram.
  • the phosphor formed to emit secondary radiation from the red spectral region has a chromaticity coordinate [XR / YR] / where XR> 0.6 and YR ⁇ 0.25.
  • the coordinates XR and YR are in one by 0.6 -S XR -S 0.75 and
  • the color location of the red light is in a region P which is the red corner of the NTSC color space
  • the light emitted from the semiconductor layer sequence of the second luminescence ⁇ diode chips 3 green light in particular has a color point in the CIE chromaticity diagram, which is in a color locus PQ containing the color location on the Spektralfarbline S, where the wavelength is assigned 520 nm, and the chromaticity whose distance in the y direction is less than 0.1 and in the y direction is less than 0.15 from this color locus.
  • phosphors which emit secondary radiation with an intensity maximum in the green spectral range - for example with orthosilicate phosphors - usually only color locations P conv can be achieved, which are further removed from the color locus of a green spectral color on the spectral color line S (see FIG. 10).
  • the color location range P conv achievable with such green emitting phosphors lies almost entirely within the so-called NTSC color space, which is defined by the triangle NTSC with the coordinates
  • FIG. 10 Another color space shown in FIG. 10 is the so-called sRGB color space, which in the CIE diagram is defined by the triangle sRGB with the coordinates
  • the luminescence diode arrangement 1 is designed to emit mixed light which contains blue light of the first luminescence diode chip 2, green light of the second luminescence diode chip 3 and red light of the luminescence conversion element 4.
  • the mixed light has a color locus with the
  • FIG. 11 shows the emission spectrum of the light emitting diode array according to the first embodiment
  • the intensity I of the mixed light is plotted in arbitrary units as a function of the emission wavelength ⁇ .
  • the mixed light has a first emission peak which extends from about 410 nm to 480 nm and an emission maximum Ig in the blue spectral range, which corresponds to the dominant wavelength of the first LED chip 2, at 450 nm having.
  • a second peak extends from about 490 nm to 570 nm with an intensity maximum IQ in the green
  • Luminescence diode chips 3 corresponds.
  • a third peak of the intensity spectrum of the mixed light extends from about 580 nm to at least 750 nm, in particular to about 780 nm and has an intensity maximum I R in the red spectral range at a wavelength of about 640 nm.
  • the ratios of the intensity maxima of the three peaks are chosen in particular such that the mixed light causes a white color impression.
  • the intensity maxima of the first, second and third peaks in the present case have a ratio of about 10: 4: 2.
  • FIG. 2 shows a schematic plan view of the front side 100 of a luminescence diode arrangement 1 according to a second exemplary embodiment.
  • Embodiment thereby differs from that of the first embodiment, which is also the second
  • Lumineszenzdiodenchip 2 is provided with the luminescence conversion element 4.
  • a first part 4A of the luminescence conversion element is applied to the semiconductor layer sequence of the first luminescence diode chip
  • a second part 4B of the luminescence conversion element is applied to the semiconductor layer sequence of the second luminescence diode chip3 .
  • Luminescence conversion element may, for example, analogous to the embodiment of in connection with the first
  • the first part 4A and / or the second part 4B may each be a converter plate or one of the respective ones
  • Semiconductor layer sequence act at least partially enclosing cap.
  • FIGS. 3A and 3B show a luminescence diode arrangement 1 according to a third exemplary embodiment in one
  • FIG. 3A schematic top view of the front 100 (Fig. 3A) and in a schematic cross section (Fig. 3B).
  • the luminescence conversion element 4 is at the third
  • the luminescence conversion element 4 is integrally formed with the component envelope which encapsulates the luminescence diode chips 2, 3.
  • the component casing contains a potting compound which preferably comprises an epoxy resin and / or a silicone material.
  • the first and second luminescence ⁇ diode chip 2 is encapsulated in this embodiment by means of the luminescence conversion element 4 in the recess 50 of the housing member 5. 3 Preferably that fills
  • Luminescence conversion element 4 the recess 50 partially or completely and in particular adjacent to a
  • Recess 50 at. In particular, it covers the entire bottom surface of the recess 50 in a plan view of the front side.
  • the luminescence conversion element may be configured to red light a portion of the green light emitted by the second LED chip 3
  • the conversion of green light of the second LED chip 2 into red light may have a lower efficiency than that
  • FIGS. 4A and 4B show a luminescence diode arrangement 1 according to a fourth exemplary embodiment in one
  • FIG. 4A schematic plan view of the front 100 (Fig. 4A) and in a schematic cross section (Fig. 4B).
  • Lumineszenzdiodenchip 2 is arranged in the reflector trough 50 of a first component housing 5A and the second
  • Lumineszenzdiodenchip 3 is arranged in the reflector trough 50 of a second, different from the first component housing 5B.
  • the component housings 5A, 5B can be
  • the luminescence conversion element 4 is as in the first
  • Embodiment as a luminescence conversion layer on the first LED chip 2 applied.
  • Reflector trough 50 of the second component housing is
  • FIGS. 5A and 5B show a fifth exemplary embodiment of a luminescence diode arrangement 1 in a schematic plan view of the front side 100 (FIG. 5A) and in a schematic cross section (FIG. 5B).
  • Embodiment corresponds substantially to that of the fourth embodiment, but with the difference that the luminescence conversion element is not applied as a layer on the first LED chip 2.
  • the luminescence conversion element 4 is integrated with the potting compound which encapsulates the first luminescence diode chip 2.
  • the luminescence is filled into the reflector trough 50 of the first housing member 5A ⁇ conversion element. 4
  • the reflector trough 50 of the second component housing 5B may, for example, be free of a potting compound or be partially or completely filled with a translucent or transparent potting compound, wherein the translucent or transparent potting compound in particular does not contain any phosphor.
  • Figure 6 shows a sixth embodiment of a
  • Luminescence diode chip 3 is connected to a second part 4B of the Provided luminescence conversion element.
  • the first and second luminescence diode chips 2, 3 are arranged in separate component housings 5A, 5B.
  • Lumineszenzkonversionselements arranged in the reflector trough 50 of the first component housing 5A and the second
  • Luminescence conversion element are arranged in the reflector trough 50 of the second component housing 5B.
  • Figure 7 shows a seventh embodiment of a
  • This embodiment differs from the sixth embodiment in that the first part 4A and the second part 4B of the luminescence conversion element than the respective luminescence diode chip 2 or 3 in the
  • Reflector trough 50 of the respective component housing 5A and 5B encapsulating potting compound are executed.
  • FIG. 8 shows an exemplary embodiment of a backlighting device 10 in a schematic plan view.
  • the backlight device 10 includes a plurality of light emitting diode arrays 1, which may be formed according to the first embodiment, for example.
  • the luminescence diode arrangements 1 of the other exemplary embodiments are also suitable for the backlighting device 10.
  • the luminescence diode arrangements 1 can be arranged, for example, on a common device carrier 7. In one embodiment, they are in rows and columns
  • Figure 9 shows a display device with the
  • Backlight device 10 according to the embodiment of Figure 8 in a schematic cross section.
  • Display device which is in particular an LCD
  • the backlighting device 10 illuminates a
  • Light valve assembly 8 which contains in particular a plurality of liquid crystal cells.
  • FIG. 12 shows the gamut 9 of the display device which can be achieved by means of the backlighting device 10 in accordance with FIG. 12
  • the gamut 9 of the display device when displayed in the CIE standard color chart, has a surface area that is significantly larger than that of the sRGB color space (represented by the triangle labeled sRGB in Figure 12). In particular, the surface area of the gamut 9 is about 110% of the sRGB color space (represented by the triangle labeled sRGB in Figure 12).
  • the display device has a
  • the LED chips 2 of the LED arrays 1 have a dominant wavelength of 440 nm instead of 450 nm as in the first embodiment have.
  • the gamut 9 of the display device has a particular Area of 120% or more of the area of the NTSC color space.

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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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Abstract

L'invention concerne un système de diode électroluminescente (1) comportant une première puce de diode électroluminescente (2), une seconde puce de diode électroluminescente (3) et un élément de conversion de la luminescence (4, 4a, 4b). La première puce de diode électroluminescente (2) est conçue pour émettre de la lumière bleue. La seconde puce de diode électroluminescente (3) contient une succession de couches semi-conductrices qui est conçue pour émettre de la lumière verte. L'élément de conversion de la luminescence (4, 4a, 4b) est conçu pour convertir une partie de la lumière bleue émise par la première puce de diode électroluminescente (2) en lumière rouge. Le système de diode électroluminescente (1) est conçu pour émettre une lumière mixte qui contient la lumière bleue de la première puce de diode électroluminescente (2), la lumière verte de la seconde puce de diode électroluminescente (2) et la lumière rouge de l'élément de conversion de la luminescence (4, 4a, 4b). L'invention concerne par ailleurs un dispositif de rétroéclairage (10) et un dispositif d'affichage.
EP10795318A 2009-12-21 2010-12-15 Système de diode électroluminescente, dispositif de rétroéclairage et dispositif d'affichage Withdrawn EP2517271A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009059889 2009-12-21
DE102010012423A DE102010012423A1 (de) 2009-12-21 2010-03-23 Lumineszenzdiodenanordnung, Hinterleuchtungsvorrichtung und Anzeigevorrichtung
PCT/EP2010/069812 WO2011085897A1 (fr) 2009-12-21 2010-12-15 Système de diode électroluminescente, dispositif de rétroéclairage et dispositif d'affichage

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EP2517271A1 true EP2517271A1 (fr) 2012-10-31

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US (1) US9214608B2 (fr)
EP (1) EP2517271A1 (fr)
JP (1) JP2013515366A (fr)
KR (1) KR20120094525A (fr)
CN (1) CN102714262A (fr)
DE (1) DE102010012423A1 (fr)
WO (1) WO2011085897A1 (fr)

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Also Published As

Publication number Publication date
US9214608B2 (en) 2015-12-15
JP2013515366A (ja) 2013-05-02
CN102714262A (zh) 2012-10-03
DE102010012423A1 (de) 2011-06-22
KR20120094525A (ko) 2012-08-24
US20120274878A1 (en) 2012-11-01
WO2011085897A1 (fr) 2011-07-21

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