EP2479767B1 - Contacteur et interrupteur - Google Patents

Contacteur et interrupteur Download PDF

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Publication number
EP2479767B1
EP2479767B1 EP12151370.9A EP12151370A EP2479767B1 EP 2479767 B1 EP2479767 B1 EP 2479767B1 EP 12151370 A EP12151370 A EP 12151370A EP 2479767 B1 EP2479767 B1 EP 2479767B1
Authority
EP
European Patent Office
Prior art keywords
contact
contactor
face
contact blocks
blade
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
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EP12151370.9A
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German (de)
English (en)
French (fr)
Other versions
EP2479767A1 (fr
Inventor
Yannick Vuillermet
Henri Sibuet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Publication of EP2479767A1 publication Critical patent/EP2479767A1/fr
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Publication of EP2479767B1 publication Critical patent/EP2479767B1/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/30—Means for extinguishing or preventing arc between current-carrying parts
    • H01H9/40—Multiple main contacts for the purpose of dividing the current through, or potential drop along, the arc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H36/00—Switches actuated by change of magnetic field or of electric field, e.g. by change of relative position of magnet and switch, by shielding

Definitions

  • the invention relates to a contactor actuated by a magnetic field and a switch comprising this contactor.
  • the invention aims to reduce the resistance of this contactor in the closed position. It therefore relates to a contactor according to claim 1.
  • the above contactor has a smaller closed position resistance than that of an identical reference contactor but provided with a single pair of pads. Indeed, since the cross section of the bridges Pt ji is small in front of the surface S Zi of the overlap zone (that is to say that the surface S Ptji is less than 2/3 of the surface S Zi ) , the majority of the magnetic flux concentrated by the pad P 1i through the overlap region instead of the Pt bridge 1i. The pads of each pair of pads P 1i , P 2i are therefore attracted to each other under the effect of the magnetic field by a force close to that observed for the reference contactor. The resistance R i between the pads of each pair of pads P 1i , P 2i in the closed position is therefore as close to that observed for the reference contactor.
  • the contactor above has n pairs of pads P 1i , P 2i and therefore n resistors R i in parallel when the contactor is in the closed position.
  • the resistance in the closed position of the above contactor is therefore much smaller than that of the reference contactor because of this paralleling of several resistors R i .
  • the resistance in the closed position of the above contactor is close to that which would be obtained by connecting in parallel n reference contactors.
  • the above contactor has a much smaller footprint.
  • the bridges Pt ji mechanically and electrically connect the different pads together. It is therefore not necessary to provide specific electrical tracks to connect the pairs of pads in parallel as would be the case if n reference switches were connected in parallel.
  • the size of the contactor above is reduced. More precisely, the more the number n of pairs of studs increases, the more the first and second blades overlap.
  • the size of the contactor above is less than nS / 2, where S is the size of the reference contactor while the size of n reference contactors in parallel is substantially equal to nS.
  • the size of the contactor is represented by the surface it occupies in a plane parallel to the longitudinal and transverse directions.
  • Embodiments of this contactor may include one or more of the features of the dependent claims.
  • the invention also relates to a switch according to claim 8.
  • the source 3 generates when it is controlled a magnetic field or a magnetic induction B 0 parallel to a longitudinal direction X. In the absence of control, the source 3 generates no magnetic field.
  • the micro-contactor 2 is a contactor. However, it differs from macroscopic contactors inter alia by its manufacturing process.
  • the micro-contactors are made using the same collective manufacturing processes as those used to make the microelectronic chips. For example, the micro-contactors are made from monocrystalline silicon or machined glass chips by photolithography and etching and / or structured by epitaxial growth and deposition of metallic material.
  • the micro-contactor 2 is made in a plane substrate 4 which extends horizontally, that is to say here in parallel with the orthogonal directions X and Y. In the rest of this description, the vertical direction, orthogonal to the X and Y directions , is noted Z.
  • the substrate 4 is a rigid substrate.
  • its thickness, in the direction Z is greater than 200 and preferably greater than 500 microns. It is advantageously electrically insulating.
  • this substrate 4 is a silicon substrate that is to say having at least 10% and typically more than 50% by weight of silicon.
  • This substrate is inorganic and non-photosensitive.
  • the substrate 4 has a flat horizontal top face 6.
  • the micro-contactor 2 comprises electrodes 8 and 10 through which circulates the current flowing through this micro-contactor. These electrodes 8 and 10 are fixed without any degree of freedom to the substrate 4. Here, these electrodes 8 and 10 are parallelepipeds whose upper faces are located in the same plane as the upper face 6. The vertical faces of these electrodes s' extend in the interior of the substrate 4. The vertical faces are connected to each other inside the substrate by a lower face, for example, parallel to the upper face.
  • Each blade 12, 14 has a proximal end, respectively 16, 18, mechanically and electrically connected, respectively, to the electrodes 8 and 10.
  • the proximal ends 16 and 18 are connected without any degree of freedom to their respective electrodes.
  • these proximal ends 16, 18 are stationary.
  • the blades form a single block of material with the electrode to which they are mechanically connected.
  • Each blade 12, 14 also has a distal end, respectively 20, 22. These distal ends 20 and 22 are vis-à-vis and separated from each other by the air gap 15 in the open position. The thickness of the gap in the Y direction is noted d. Conversely, these distal ends are directly in contact with one another in the closed position.
  • the two distal ends 20, 22 are flexible to move between the open and closed positions.
  • the distal ends 20, 22 move only parallel to the horizontal plane X, Y. For this purpose, they are received inside a box 24 filled with a dielectric gas such as air or other. More specifically, each distal end 20, 22 flexes to reach the closed position from the open position. The deformations experienced by each distal end 20, 22 between the closed and open positions are all elastic to allow it to automatically return to the open position in the absence of external stress.
  • each distal end 20, 22 is much longer in the X direction than thick in the Y direction.
  • each distal end 20, 22 is five, ten, or fifty times longer than it is thick.
  • the thickness of the distal end 20 is less than 100 microns and preferably less than 50 or 30 microns.
  • each distal end 20, 22 in the direction Z is typically in this example of the order of 20 to 50 microns.
  • distal ends 20, 22 are shaped to limit the resistance of the microswitch in the closed position.
  • An example of such a conformation is described with reference to the figure 3 .
  • a soft magnetic material is a material having a relative permeability of which the real part at low frequency is greater than or equal to 1000. Such a material typically has a coercive excitation to demagnetize less than 100 Am -1 .
  • the soft magnetic material used here is an alloy of iron and nickel.
  • the vertical and lower faces of these blades are covered with a conductive coating 28. It is the same for the vertical and lower faces of the electrodes 8, 10.
  • this coating is made of rhodium (Ro) or ruthenium (Ru) or platinum (Pt).
  • the micro-contactor 2 may also comprise a cover 30 ( figure 2 ) which covers the box 24. To simplify the figure 1 , this cover has not been shown on it.
  • the figure 2 represents the micro-contactor 2 in vertical section along a sectional plane II shown in FIG. figure 1 .
  • a cover 30 which covers the housing 24 is shown. This cover 30 makes it possible to prevent impurities from penetrating inside the box 24 and impede the movement of the blades 12, 14. It also makes it possible to prevent the oxidation of the contact.
  • each end 20, 22 comprises several pads P ji arranged next to each other in the direction X, where the index j identifies the blade and the index i identifies the pad of this blade. More precisely, in the remainder of this description, the index j takes the value "1" to designate the blade 12 and the value "2" to designate the blade 14.
  • Each pad P ji has a flat face F ji turned towards the gap 15.
  • each pad P 1i is vis-à-vis a pad P 2i of the other blade.
  • Two pads P 1i and P 2i face each other if the intersection of the face F 2i and the projection, in the direction Y, of the face F 1i on the face F 2i forms a zone Z i of overlap whose surface S Zi is strictly greater than zero.
  • two pads P 1i and P 2i vis-à-vis have the same index i.
  • the surface S Ptji of the cross section of the bridge Pt ji is strictly smaller than the surface of the cross section of the pads P ji and P j, i + 1 that it connects.
  • surface of the cross section denotes the area of the section of the stud or of the bridge parallel to the plane defined by the directions YZ.
  • the conformation of the ends 20 and 22 is represented in the particular case where the number n of pairs of pads P 1i , P 2i vis-à-vis is equal to two.
  • ends 20 and 22 are identical except that they are facing each other. Indeed, the faces F 1i are turned towards the faces F 2i . Thus, subsequently, only the end 20 is described in detail.
  • the pad P 11 is directly connected to the end 16 by a parallelepipedal arm B 1 of length l in the direction X, of thickness e in the direction Y and of height e c in the direction Z.
  • the pad P 11 is connected to the pad P 12 by the bridge Pt 11 .
  • the dimensions of the pads P 11 and P 12 are the same. Thus, only the dimensions of the pad P 11 are described in more detail.
  • the pad P 11 is a parallelepiped of length ⁇ x, thickness e p and height e c .
  • the face F 11 and the zone Z 1 covering are therefore rectangles.
  • the length of the overlap area Z 1 in the X direction is denoted by "x".
  • the length of the pad P 11 is taken proportional to the length x of the overlap zone Z 1 . It is therefore noted in the form of a product between a constant ⁇ and the length x.
  • the bridge Pt 11 is a parallelepiped of length e s , thickness e pt and height e c .
  • the bridge Pt 11 is dimensioned so that its transverse surface S Pt11 is at least less than two-thirds of the area S Z1 of the recovery zone Z 1 .
  • the magnetic flux concentrated by the pads P 11 or P 12 crosses mainly the gap 15 rather than the bridge Pt 11 . This therefore makes it possible to increase the amount of magnetic flux which passes through the gap 15 via the overlapping zones.
  • the contact force f contact between the pairs of studs vis-à-vis is proportional to the magnetic flux divided by the surface through which this flow.
  • minimizing the vertical section of the bridges Pt 1i makes it possible to increase the contact force between the studs in the closed position and thus to reduce the resistance of the contactor in closed position.
  • this Pt bridge 11 is at least less than one third of the thickness e p of P 11 and P 12 pads.
  • this bridge Pt 11 also corresponds to the bottom of a groove of depth t p which separates the faces F 11 and F 12 .
  • the width of this groove is here equal to the length e s of the bridge Pt 11 .
  • the thickness e p of the pad P 11 is equal to the sum of the depth t p and the thickness e pt of the bridge Pt 11 .
  • the total length of the end 20 is noted p .
  • the length l p is equal to 2 ⁇ x + e s .
  • the ends 20 and 22 are offset relative to each other, in the X direction, by a distance g to reduce the overlapping surfaces S Zi .
  • the distance g is chosen so that the following two relationships are verified: S Zi ⁇ S 1 i / 3 S Zi ⁇ S 2 i / 3 , where S 1i and S 2i are the surfaces, respectively, of the faces F 1i and F 2i .
  • the surface S Zi is less than one quarter to one eighth of the surfaces S 1i and S 2i .
  • Reduce the surface covering Zi S makes it possible to concentrate the magnetic flux on a smaller area than the area of F ji faces. This therefore makes it possible to increase the contact contact force between these pads and thus to reduce the resistance of the contactor in the closed position.
  • the contact force f contact is the force exerted by the pad P 1i on the pad P 2i in the closed position. The higher the contact force, the lower the resistance of the contact.
  • the restoring force f recall is the restoring force which is exerted on each stud and constantly urges them towards the open position.
  • the polarization J s is the polarization of the magnetic material observed when it is saturated.
  • the polarization is the ratio between the intensity of the magnetic field B 0 and the demagnetizing factor Nd.
  • the distance d of the air gap in the open position is chosen. This distance d must be large enough to electrically isolate the pads P 1i pads P 2i in the open position. It therefore depends in particular on the voltage present between the terminals 8 and 10 of the microswitch 2 in the open position.
  • this distance d is chosen to be greater than 5 ⁇ m so as to electrically isolate the pads P 1i from the pads P 2i even in the presence of a voltage of 220 volts between the terminals 8 and 10.
  • This value of 5 ⁇ m is given in FIG. particular case where the gap 15 is filled with air.
  • the disruptive field of the air is of the order of 50V / ⁇ m for dimensions as small as those of the ends 20 and 22.
  • the distance d is chosen to be small enough to remain in the zone of elastic deformation of the blades 12 and 14.
  • the maximum limit for the distance d therefore depends on the characteristics of the magnetic material chosen, such as its Young's E modulus. remain in this zone of elastic deformation, d is chosen less than 15 .mu.m.
  • the distance d is set equal to 5 ⁇ m to minimize the size of the micro-contactor 2.
  • the height e c is fixed.
  • the higher this height e c the more the resistance of the micro-contactor 2 in the closed position decreases.
  • manufacturing technological constraints impose an upper limit on the height e c .
  • the height e c is chosen at most equal to 30 ⁇ m and at least greater than 10 ⁇ m.
  • the height e c is chosen to be equal to 20 ⁇ m.
  • the thickness e p of the pads is calculated to obtain a magnetic force f f which attracts the pad P 1i to the pad P 2i in the presence of the magnetic field B 0 equal to 170 ⁇ N.
  • the force f f is taken here equal to 170 ⁇ N.
  • the thickness e p , the height e c are expressed in ⁇ m and the force f f is expressed in ⁇ N.
  • the length x is calculated using the relation (2).
  • the length x is here equal to 20 microns.
  • the length ⁇ x of the pads P ji is calculated. This length ⁇ x is determined so that each pad P ji is completely magnetically saturated when the field B 0 is present.
  • the length ⁇ x is calculated so that each pad P ji is just saturated.
  • just saturated denotes the fact that each pad is saturated by the field B 0 and is not saturated by a field B 1 identical to the field B 0 except that intensity is equal to 80% and, preferably 90%, the intensity of the field B 0 .
  • different relations obtained by modeling the pad P ji using the laws of electromagnetism are used.
  • J s B 0 1 ⁇ r - 1 + nd ⁇ B 0 nd
  • Nd is the demagnetizing factor of the pad P ji .
  • This factor Nd is based on the dimensions of the pad P ji.
  • a step 34 the length l, the thickness e, the width es and the depth t p are determined to obtain a restoring force u reminder equal to 20 ⁇ N and a f amin force equal to 20 ⁇ N.
  • e is fixed to minimize the size of the micro-contactor 2. For example, e is chosen equal to 5 microns.
  • the distance g in this particular case, is also fixed so that the pad P 1i is only opposite the single pad P 2i .
  • g is chosen equal to 50 microns.
  • f amin 2 ⁇ amin e s + ⁇ x
  • ⁇ amin is the mechanical restoring torque exerted by the bridge Pt 11 on the pad P 12 .
  • ⁇ amin S amin d 2 e s + ⁇ x
  • S amin E e s 3 3 I 3 + ⁇ x 3 3 I 4 + 1 I 3 ⁇ x 2 e s + ⁇ x e s 2
  • the length l is calculated to verify the stress according to which the return force f is equal to 20 ⁇ N.
  • ⁇ r is the torque of the restoring force. This torque is equal to twice the return torque ⁇ meca exerted by each of the blades 12 and 14.
  • ⁇ Mecca S . f 0 . I + I p
  • f 0 is the maximum deflection of the blade 12.
  • this arrow f 0 is approximated using the following relation: f 0 ⁇ - d - l + 1 - ⁇ x l + l p - 1
  • step 36 If the torque ⁇ 0 is not greater than the torque F r , then, proceed to a step 36 in which the thickness e p is increased or the thickness e is decreased. At the end of step 36, we return to step 34 to again calculate the length l and the depth t p .
  • step 37 it is verified in a step 37 if the f amin force is much greater than or equal to 20 ⁇ N. If not, a step 38 is carried out, during which the distance g is modified. For example, the distance g is decreased. At the end of step 38, the process returns to step 34.
  • a step 39 is performed in which the micro-contactor 2 having the determined dimensions is manufactured.
  • the described manufacturing method is a collective manufacturing process using microelectronics manufacturing process technologies. It begins with the supply of a silicon wafer better known as the "Wafer” on which will be simultaneously manufactured several micro-contactors 2 using the same operations. To simplify the description which follows, the various manufacturing steps are described only in the case of a single micro-contactor. Different states of manufacture obtained during the process of the figure 3 are shown in vertical section on the Figures 6 to 10 .
  • a layer 41 ( figure 6 ) of photosensitive resin is deposited on the upper face 6 of the substrate 4. Then the areas where the cavities must be hollowed in the substrate 4 are defined by insolation of the resin. These areas correspond to the location of the electrodes and blades. This is a classic step of photolithography.
  • anisotropic etching of the zones defined for engraving cavities 44, 46 in the substrate (FIG. figure 6 ) forming a hollow pattern of the blades 12 and 14 and the electrodes 8 and 10.
  • anisotropic etching is meant here an etching whose burning speed in the Z direction is at least ten times and Preferably fifty or one hundred times faster than the engraving speed in the horizontal directions X and Y.
  • the horizontal etching rate is negligible compared to the etching speed in the vertical direction. This makes it possible to obtain more vertical flanks than if the etching was carried out using other etching processes.
  • the sides of the cavities 44, 46 thus dug are more vertical than if they had been dug in a photoresist or using another etching process.
  • plasma etching or deep silicon chemical etching is used here.
  • a step 48 the photoresist layer 41 is removed and the conductive coating 28 is deposited on the whole of the upper face.
  • this conductive coating covers not only the vertical flanks of the cavities but also the bottom of the cavities and the upper face 6 of the substrate.
  • the cavities are filled with a soft magnetic material 52 ( figure 5 ).
  • the filling is carried out by electrolytic deposition using the coating 28 as the conductive electrode.
  • this coating 28 also fulfills the function of a seed layer. Since the coating 28 extends over the entire upper face of the substrate 4, the material 52 is also deposited on the entire upper face of the substrate 4 as well as inside the cavities 44 and 46. The state shown in FIG. on the figure 7 .
  • a step 54 the chemical-mechanical planarization of the substrate 4 is carried out to restore the upper planar face 6 of the substrate 4.
  • the chemical mechanical planarization is better known by the acronym CMP ("Chemical mechanical planarization").
  • CMP Chemical mechanical planarization
  • This planarization step is here used to remove the material 52 and the coating 58 situated outside the cavities 44 and 46. At the end of this step, the state represented on the figure 8 .
  • the cover 30 is deposited at the location where the housing 24 is to be dug.
  • an excess thickness 58 is deposited ( figure 9 )
  • the material used to create this extra thickness 58 is capable of being etched by the same isotropic etching agent as the substrate 4.
  • it is is silicon.
  • This excess thickness 58 makes it possible to isolate the cap 30 from the upper face of the distal ends 20 and 22.
  • a thin layer 59 is deposited on the whole of the upper face of the substrate 4. This layer thin 59 is made of a material resistant to the isotropic etching agent.
  • inlet orifices 60 for the isotropic etching agent. To simplify the figure 9 only one of the orifices 60 has been shown. These orifices are disposed above the location where the box 24 is to be dug.
  • the substrate 4 is etched to produce the box 24.
  • the etching is isotropic. Isotropic etching is an etching step in which the etching rates in the X, Y directions are equal to the etching rate in the Z direction to within plus or minus 50%, and preferably to plus or minus 20 or so. 10% close.
  • the isotropic etching agent is contacted with the silicon to be etched via the inlet ports 60.
  • the etching agent used is chosen not to react with the soft magnetic material. 52 and the coating 28.
  • the etching agent is an XeF 2 gas.
  • the etching agent is an isotropic etching agent, it releases the vertical faces of the ends 20 and 22 and, at the same time, the underside, i.e., the underside, of the distal end 20 ( figure 10 ).
  • the inlet orifices 60 are optionally closed and the slab on which the different microswitches have been collectively made is cut out to mechanically isolate them from each other.
  • the figure 11 represents a micro-contactor 80.
  • This micro-contactor 80 is identical to the micro-contactor 2 except that the end 20 is replaced by a fixed end 82.
  • the end 82 is here identical to the end 20 except that it is fixed without any degree of freedom to the substrate 4.
  • the arm B 1 is omitted.
  • the pads P 11 and P 22 and the bridge Pt 11 are identical, respectively, to the pads P 21 and P 22 and the bridge Pt 21 .
  • the figure 12 represents a microswitch 90 identical to the microswitch 2 except that the end 20 is replaced by an end 92. To simplify this figure, only the ends 92 and 22 are shown in detail.
  • the end 92 is identical to the end 20 except that the distance g is chosen in this embodiment equal to -x to create a new additional zone of overlap Z ' 1 between the pad P 12 and the pad P 21 .
  • g is chosen so that the dimensions of this zone Z ' 1 of overlap are identical to those of the zones Z 1 and Z 2 so as to evenly distribute the contact force between the different points of contact between the studs.
  • the increase in the number of contact points makes it possible to reduce the resistance of the microswitch in the closed position since, as will now be described with reference to FIG. figure 13 , the ends 22 and 92 are dimensioned so that the contact forces exerted at each point of contact are identical to those that would be obtained if a single point of contact existed.
  • step 34 is replaced by step 100 and steps 37 and 38 are omitted.
  • the thickness e is chosen to limit the size of the micro-contactor 90.
  • e is chosen equal to 5 microns.
  • the thickness t p is determined from the stress imposed on the f amin force using the following relationships in a manner similar to that previously described with respect to step 34.
  • f amin 2 ⁇ amin 2 e s + ⁇ x
  • ⁇ amin is the mechanical return torque exerted by the Pt bridge 11 of the pad P 12. It is given by the preceding relation (9).
  • the stress fixed on the f amin force makes it possible to calculate the depth t p from the previous relations.
  • the length l is determined from the stress imposed on the force reminder .
  • ⁇ meca S . f 0 . I + I p
  • the factor S of the relation (30) is determined from the same relation (17) as that given with respect to the step 34.
  • the length l is equal to 35 ⁇ m
  • the thickness e is equal to 5 ⁇ m
  • the depth t p is equal to 35 ⁇ m.
  • the total space excluding contact pads of the micro-contactor 90 is given by the product of the total length L t by the total thickness and.
  • the silicon surface occupied by the blades is here 570 ⁇ 85 ⁇ m 2 .
  • the micro-contactor 90 is therefore slightly less bulky than the micro-contactor 2 and its resistance in the closed position is lower.
  • the figure 14 represents a micro-contactor 110 identical to the micro-contactor 90 but in which the end 92 is replaced by a fixed end 112.
  • the end 112 is fixed without degree of freedom to the substrate 4.
  • the arm B 1 is omitted.
  • the length x is chosen to be between e p / 3 and e p / 1.5.
  • the length x is chosen equal to e p / 2 to plus or minus 30%.
  • the stress force f on the amino may be omitted.
  • the different contact forces at the different points of contact are all identical to each other.
  • at least one of the pads can be sized to produce a contact force greater than that produced by other pads. For example, this can also be achieved by choosing different lengths for the different overlapping areas.
  • each of the pads it is not necessary to magnetically saturate each of the pads. For example, only a few pads are sized to be saturated by the field B 0 . As a variant, none of the pads is saturated.

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EP12151370.9A 2011-01-19 2012-01-17 Contacteur et interrupteur Not-in-force EP2479767B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1150424A FR2970596B1 (fr) 2011-01-19 2011-01-19 Contacteur et interrupteur

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EP2479767A1 EP2479767A1 (fr) 2012-07-25
EP2479767B1 true EP2479767B1 (fr) 2017-09-20

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EP (1) EP2479767B1 (zh)
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Publication number Publication date
CN102610437B (zh) 2014-09-24
FR2970596A1 (fr) 2012-07-20
US20120182100A1 (en) 2012-07-19
CN102610437A (zh) 2012-07-25
FR2970596B1 (fr) 2013-02-08
US8531257B2 (en) 2013-09-10
EP2479767A1 (fr) 2012-07-25

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