EP2472568A4 - Silicon carbide epitaxial wafer and manufacturing method therefor - Google Patents

Silicon carbide epitaxial wafer and manufacturing method therefor Download PDF

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Publication number
EP2472568A4
EP2472568A4 EP10811903.3A EP10811903A EP2472568A4 EP 2472568 A4 EP2472568 A4 EP 2472568A4 EP 10811903 A EP10811903 A EP 10811903A EP 2472568 A4 EP2472568 A4 EP 2472568A4
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EP
European Patent Office
Prior art keywords
manufacturing
silicon carbide
method therefor
epitaxial wafer
carbide epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP10811903.3A
Other languages
German (de)
French (fr)
Other versions
EP2472568B1 (en
EP2472568A1 (en
Inventor
Kenji Momose
Yutaka Tajima
Yasuyuki Sakaguchi
Michiya Odawara
Yoshihiko Miyasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
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Publication of EP2472568A1 publication Critical patent/EP2472568A1/en
Publication of EP2472568A4 publication Critical patent/EP2472568A4/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
EP10811903.3A 2009-08-28 2010-08-25 Silicon carbide epitaxial wafer and manufacturing method therefor Active EP2472568B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009198872A JP4959763B2 (en) 2009-08-28 2009-08-28 SiC epitaxial wafer and manufacturing method thereof
PCT/JP2010/064375 WO2011024854A1 (en) 2009-08-28 2010-08-25 Silicon carbide epitaxial wafer and manufacturing method therefor

Publications (3)

Publication Number Publication Date
EP2472568A1 EP2472568A1 (en) 2012-07-04
EP2472568A4 true EP2472568A4 (en) 2017-08-02
EP2472568B1 EP2472568B1 (en) 2022-01-12

Family

ID=43627954

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10811903.3A Active EP2472568B1 (en) 2009-08-28 2010-08-25 Silicon carbide epitaxial wafer and manufacturing method therefor

Country Status (6)

Country Link
US (2) US8823015B2 (en)
EP (1) EP2472568B1 (en)
JP (1) JP4959763B2 (en)
KR (1) KR101369577B1 (en)
CN (1) CN102576666B (en)
WO (1) WO2011024854A1 (en)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8679952B2 (en) 2010-05-10 2014-03-25 Mitsubishi Electric Corporation Method of manufacturing silicon carbide epitaxial wafer
JPWO2012005142A1 (en) * 2010-07-09 2013-09-02 旭硝子株式会社 Abrasive and polishing method
JP5897834B2 (en) 2011-07-19 2016-03-30 昭和電工株式会社 Method for manufacturing SiC epitaxial wafer
JP5999687B2 (en) * 2011-08-31 2016-09-28 ローム株式会社 SiC epitaxial wafer and SiC semiconductor device using the same
JP5961357B2 (en) 2011-09-09 2016-08-02 昭和電工株式会社 SiC epitaxial wafer and manufacturing method thereof
WO2013051555A1 (en) * 2011-10-07 2013-04-11 旭硝子株式会社 Single-crystal silicon-carbide substrate and polishing solution
JP5076020B2 (en) * 2011-10-25 2012-11-21 昭和電工株式会社 SiC epitaxial wafer
EP2778649B1 (en) * 2011-11-11 2022-01-05 Kwansei Gakuin Educational Foundation Method for manufacturing a nanometer standard prototype
KR101936171B1 (en) * 2011-12-19 2019-04-04 엘지이노텍 주식회사 Method for fabrication silicon carbide epi wafer and silicon carbide epi wafer
KR101942514B1 (en) * 2011-12-16 2019-01-28 엘지이노텍 주식회사 Method for deposition of silicon carbide and silicon carbide epi wafer
WO2013089463A1 (en) * 2011-12-16 2013-06-20 Lg Innotek Co., Ltd. Method for deposition of silicon carbide and silicon carbide epitaxial wafer
KR101942536B1 (en) * 2011-12-19 2019-01-29 엘지이노텍 주식회사 Method for fabrication silicon carbide epi wafer
KR101936170B1 (en) * 2011-12-19 2019-01-08 엘지이노텍 주식회사 Method for fabrication silicon carbide epi wafer
KR20130076365A (en) * 2011-12-28 2013-07-08 엘지이노텍 주식회사 Method for fabrication silicon carbide epitaxial wafer and silicon carbide epitaxial wafer
JP5400228B1 (en) 2012-04-27 2014-01-29 三井金属鉱業株式会社 SiC single crystal substrate
KR101926694B1 (en) * 2012-05-30 2018-12-07 엘지이노텍 주식회사 Silicon carbide epi wafer and method of fabricating the same
KR101926678B1 (en) * 2012-05-31 2018-12-11 엘지이노텍 주식회사 Silicon carbide epi wafer and method of fabricating the same
JP6037671B2 (en) 2012-06-19 2016-12-07 昭和電工株式会社 SiC epitaxial wafer and manufacturing method thereof
JP6036200B2 (en) * 2012-11-13 2016-11-30 富士電機株式会社 Method for manufacturing silicon carbide semiconductor device
CN104704150B (en) * 2012-11-15 2018-06-12 新日铁住金株式会社 Monocrystalline silicon carbide substrate and its preparation method
DE112012007146T5 (en) * 2012-11-19 2015-08-06 Hitachi, Ltd. A semiconductor inspection device and inspection method using a charged particle beam
JP6123408B2 (en) 2013-03-26 2017-05-10 三菱電機株式会社 Single crystal 4H-SiC substrate and manufacturing method thereof
JP2014189442A (en) 2013-03-27 2014-10-06 Sumitomo Electric Ind Ltd Production method of silicon carbide semiconductor substrate
JP6112712B2 (en) * 2013-03-27 2017-04-12 国立研究開発法人産業技術総合研究所 Method for manufacturing silicon carbide epitaxial wafer
KR101989255B1 (en) * 2013-06-04 2019-06-13 쇼와 덴코 가부시키가이샤 Method for manufacturing sic single- crystal substrate for epitaxial sic wafer
CN105658847B (en) * 2014-02-28 2018-08-10 昭和电工株式会社 The manufacturing method of epi-taxial silicon carbide silicon wafer
JP6311384B2 (en) * 2014-03-24 2018-04-18 三菱電機株式会社 Method for manufacturing silicon carbide semiconductor device
JP6195426B2 (en) * 2014-04-18 2017-09-13 国立研究開発法人産業技術総合研究所 Silicon carbide epitaxial wafer and manufacturing method thereof
CN104018216A (en) * 2014-06-12 2014-09-03 西安电子科技大学 4H-SiC homoepitaxial growth system
US10450672B2 (en) 2014-07-16 2019-10-22 Showa Denko K.K. Method for producing epitaxial silicon carbide wafers
US9957641B2 (en) 2014-08-01 2018-05-01 Sumitomo Electric Industries, Ltd. Epitaxial wafer and method for manufacturing same
US9728628B2 (en) * 2014-08-29 2017-08-08 Sumitomo Electric Industries, Ltd. Silicon carbide semiconductor device and method for manufacturing same
CN106715767A (en) * 2014-10-01 2017-05-24 住友电气工业株式会社 Silicon carbide epitaxial substrate
JP6173493B2 (en) * 2014-10-03 2017-08-02 日本碍子株式会社 Epitaxial substrate for semiconductor device and method of manufacturing the same
KR102136000B1 (en) * 2015-02-18 2020-07-20 쇼와 덴코 가부시키가이샤 Method for producing silicon carbide single crystal epitaxial wafer and silicon carbide single crystal epitaxial wafer
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US10865500B2 (en) * 2015-03-03 2020-12-15 Showa Denko K.K. SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer
CN104810248B (en) * 2015-04-08 2017-08-08 中国电子科技集团公司第五十五研究所 Suitable for the in-situ treatment method of 4 ° and 8 ° off-axis silicon face silicon carbide substrates
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CN106795649B (en) * 2015-04-17 2019-12-17 富士电机株式会社 method for manufacturing semiconductor and SiC substrate
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JP6584253B2 (en) * 2015-09-16 2019-10-02 ローム株式会社 SiC epitaxial wafer, SiC epitaxial wafer manufacturing apparatus, SiC epitaxial wafer manufacturing method, and semiconductor device
JP6573514B2 (en) * 2015-09-17 2019-09-11 昭和電工株式会社 Pretreatment method for SiC single crystal substrate and method for producing epitaxial SiC wafer
CN108138360B (en) * 2015-10-07 2020-12-08 住友电气工业株式会社 Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
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JP7125252B2 (en) * 2017-08-30 2022-08-24 昭和電工株式会社 SiC epitaxial wafer and manufacturing method thereof
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JPWO2021111835A1 (en) * 2019-12-02 2021-06-10
KR102399813B1 (en) * 2019-12-20 2022-05-19 주식회사 포스코 SILICON CARBIDE EPITAXIAl WAFER AND METHOD FOR FABRICATING THE SAME
EP4239112A4 (en) 2020-10-28 2024-07-17 Kwansei Gakuin Educational Found Heat treatment environment evaluation method and silicon carbide substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1739726A1 (en) * 2004-03-26 2007-01-03 The Kansai Electric Power Co., Inc. Bipolar semiconductor device and process for producing the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000068834A (en) * 1997-08-27 2000-11-25 모리시타 요이찌 Silicon carbide substrate, process for producing the same, and semiconductor element containing silicon carbide substrate
US6329088B1 (en) 1999-06-24 2001-12-11 Advanced Technology Materials, Inc. Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00>
JP4238357B2 (en) * 2003-08-19 2009-03-18 独立行政法人産業技術総合研究所 Silicon carbide epitaxial wafer, method of manufacturing the same, and semiconductor device manufactured on the wafer
JP4581081B2 (en) 2004-03-25 2010-11-17 独立行政法人産業技術総合研究所 Method for producing silicon carbide smoothed substrate used for producing epitaxial wafer, apparatus for smoothing silicon carbide substrate surface and SiC epitaxial growth
JP5285202B2 (en) * 2004-03-26 2013-09-11 一般財団法人電力中央研究所 Bipolar semiconductor device and manufacturing method thereof
JP4694144B2 (en) * 2004-05-14 2011-06-08 住友電気工業株式会社 Method for growing SiC single crystal and SiC single crystal grown thereby
EP1619276B1 (en) * 2004-07-19 2017-01-11 Norstel AB Homoepitaxial growth of SiC on low off-axis SiC wafers
JP4839646B2 (en) * 2005-03-18 2011-12-21 住友電気工業株式会社 Silicon carbide semiconductor manufacturing method and silicon carbide semiconductor manufacturing apparatus
JP4946202B2 (en) * 2006-06-26 2012-06-06 日立金属株式会社 A method for manufacturing a silicon carbide semiconductor epitaxial substrate.
JP2008222509A (en) * 2007-03-14 2008-09-25 Matsushita Electric Ind Co Ltd METHOD FOR PRODUCING SINGLE CRYSTAL SUBSTRATE WITH SiC EPITAXIAL FILM
JP5267773B2 (en) 2008-02-22 2013-08-21 コニカミノルタアドバンストレイヤー株式会社 IMAGING LENS, IMAGING DEVICE, DIGITAL DEVICE, AND IMAGING LENS MANUFACTURING METHOD
CN100578737C (en) * 2008-11-07 2010-01-06 中国电子科技集团公司第五十五研究所 Method for preparing silicon carbide epitaxial layer without step appearance
EP2394787B1 (en) * 2009-02-04 2019-05-29 Hitachi Metals, Ltd. Manufacturing method for a silicon carbide monocrystal substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1739726A1 (en) * 2004-03-26 2007-01-03 The Kansai Electric Power Co., Inc. Bipolar semiconductor device and process for producing the same

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
CHEN W ET AL: "Growth and characterization of nitrogen-doped C-face 4H-SiC epilayers", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 297, no. 2, 29 December 2006 (2006-12-29), pages 265 - 271, XP028016743, ISSN: 0022-0248, [retrieved on 20061229], DOI: 10.1016/J.JCRYSGRO.2006.09.033 *
KIMOTO T ET AL: "Epitaxial growth of 4H-SiC{0001} and reduction of deep levels", SUPERLATTICES AND MICROSTRUCTURES, ACADEMIC PRESS, LONDON, GB, vol. 40, no. 4-6, 1 October 2006 (2006-10-01), pages 225 - 232, XP024904838, ISSN: 0749-6036, [retrieved on 20061001], DOI: 10.1016/J.SPMI.2006.06.021 *
See also references of WO2011024854A1 *
WADA K ET AL: "Epitaxial growth of 4H-SiC on 4^o off-axis (0001) and (0001@?) substrates by hot-wall chemical vapor deposition", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 291, no. 2, 1 June 2006 (2006-06-01), pages 370 - 374, XP028016535, ISSN: 0022-0248, [retrieved on 20060601], DOI: 10.1016/J.JCRYSGRO.2006.03.039 *

Also Published As

Publication number Publication date
CN102576666A (en) 2012-07-11
US20120146056A1 (en) 2012-06-14
EP2472568B1 (en) 2022-01-12
US8823015B2 (en) 2014-09-02
KR101369577B1 (en) 2014-03-04
JP4959763B2 (en) 2012-06-27
JP2011049496A (en) 2011-03-10
WO2011024854A1 (en) 2011-03-03
KR20120046282A (en) 2012-05-09
US20140339571A1 (en) 2014-11-20
EP2472568A1 (en) 2012-07-04
CN102576666B (en) 2015-10-21

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