EP2467943A4 - Hochfrequenz-leistungsverstärker mit linearisierungsvorverzerrer - Google Patents

Hochfrequenz-leistungsverstärker mit linearisierungsvorverzerrer

Info

Publication number
EP2467943A4
EP2467943A4 EP09848548.5A EP09848548A EP2467943A4 EP 2467943 A4 EP2467943 A4 EP 2467943A4 EP 09848548 A EP09848548 A EP 09848548A EP 2467943 A4 EP2467943 A4 EP 2467943A4
Authority
EP
European Patent Office
Prior art keywords
mosfet
predistorter
amplifier
power amplifier
linearizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09848548.5A
Other languages
English (en)
French (fr)
Other versions
EP2467943A1 (de
Inventor
Firouzkouhi Hamid R Amir
Bipul Agarwal
Hasan Akyol
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Skyworks Solutions Inc
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of EP2467943A1 publication Critical patent/EP2467943A1/de
Publication of EP2467943A4 publication Critical patent/EP2467943A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H03F1/3276—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using the nonlinearity inherent to components, e.g. a diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H03F3/082—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/408—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising three power stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers
    • H04B2001/0425—Circuits with power amplifiers with linearisation using predistortion

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
EP09848548.5A 2009-08-17 2009-08-17 Hochfrequenz-leistungsverstärker mit linearisierungsvorverzerrer Withdrawn EP2467943A4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2009/054023 WO2011021995A1 (en) 2009-08-17 2009-08-17 Radio frequency power amplifier with linearizing predistorter

Publications (2)

Publication Number Publication Date
EP2467943A1 EP2467943A1 (de) 2012-06-27
EP2467943A4 true EP2467943A4 (de) 2013-12-18

Family

ID=43607230

Family Applications (1)

Application Number Title Priority Date Filing Date
EP09848548.5A Withdrawn EP2467943A4 (de) 2009-08-17 2009-08-17 Hochfrequenz-leistungsverstärker mit linearisierungsvorverzerrer

Country Status (5)

Country Link
EP (1) EP2467943A4 (de)
KR (3) KR101814352B1 (de)
CN (1) CN102577136B (de)
HK (1) HK1173003A1 (de)
WO (1) WO2011021995A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103138688B (zh) * 2013-01-25 2015-09-09 中国科学院微电子研究所 一种电路单元
CN103248597B (zh) * 2013-05-17 2017-02-22 上海无线通信研究中心 基于参考信号的自适应数字预失真系统及初始化校正方法
US9350300B2 (en) 2014-01-28 2016-05-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Power amplifier
JP2018033028A (ja) 2016-08-25 2018-03-01 株式会社村田製作所 電力増幅回路
CN110677132B (zh) * 2019-09-05 2020-09-25 广州穗源微电子科技有限公司 一种射频线性功率放大器电路

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030193371A1 (en) * 2002-04-12 2003-10-16 Larry Larson CMOS class AB power amplifier with cancellation of nonlinearity due to change in gate capacitance of a NMOS input transistor with switching
US7110718B1 (en) * 2003-06-09 2006-09-19 Maxim Integrated Products, Inc. Phase distortion using MOS nonlinear capacitance
US20070052479A1 (en) * 2005-09-08 2007-03-08 Wang Chih W Dynamic bias circuit for a radio-frequency amplifier
US20070285162A1 (en) * 2006-05-22 2007-12-13 Theta Microelectronics, Inc. Highly linear Low-noise amplifiers
US20080136529A1 (en) * 2006-12-11 2008-06-12 Via Technologies, Inc. Power amplifier with nonlinear compensation, and method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6621348B2 (en) * 2001-10-25 2003-09-16 Motorola, Inc. Variable gain amplifier with autobiasing supply regulation
KR100524554B1 (ko) * 2003-05-02 2005-10-28 주식회사 에이엠티 트랜스컨덕턴스 증폭기
US20080030274A1 (en) * 2004-09-27 2008-02-07 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Gate Bias Generator
US7710204B2 (en) * 2005-04-18 2010-05-04 Freescale Semiconductor, Inc. Adaptive protection circuit for a power amplifier
JPWO2007043122A1 (ja) * 2005-09-30 2009-04-16 富士通株式会社 可変利得増幅器及びその制御方法
JP2008283407A (ja) * 2007-05-09 2008-11-20 Toshiba Corp 電力増幅器
US8787850B2 (en) * 2008-03-31 2014-07-22 Avago Technologies General Ip (Singapore) Pte. Ltd. Compensating for non-linear capacitance effects in a power amplifier

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030193371A1 (en) * 2002-04-12 2003-10-16 Larry Larson CMOS class AB power amplifier with cancellation of nonlinearity due to change in gate capacitance of a NMOS input transistor with switching
US7110718B1 (en) * 2003-06-09 2006-09-19 Maxim Integrated Products, Inc. Phase distortion using MOS nonlinear capacitance
US20070052479A1 (en) * 2005-09-08 2007-03-08 Wang Chih W Dynamic bias circuit for a radio-frequency amplifier
US20070285162A1 (en) * 2006-05-22 2007-12-13 Theta Microelectronics, Inc. Highly linear Low-noise amplifiers
US20080136529A1 (en) * 2006-12-11 2008-06-12 Via Technologies, Inc. Power amplifier with nonlinear compensation, and method thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
CHENG-CHI YEN ET AL: "A 0.25-<maths><tex>$\mu$ </tex></maths>m 20-dBm 2.4-GHz CMOS Power Amplifier With an Integrated Diode Linearizer", IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 13, no. 2, 1 February 2003 (2003-02-01), XP011066963, ISSN: 1531-1309 *
See also references of WO2011021995A1 *

Also Published As

Publication number Publication date
WO2011021995A1 (en) 2011-02-24
CN102577136B (zh) 2014-11-05
KR101814352B1 (ko) 2018-01-04
KR20120065350A (ko) 2012-06-20
KR20170032486A (ko) 2017-03-22
KR20170032485A (ko) 2017-03-22
HK1173003A1 (en) 2013-05-03
EP2467943A1 (de) 2012-06-27
CN102577136A (zh) 2012-07-11
KR101766628B1 (ko) 2017-08-08
KR101719387B1 (ko) 2017-03-23

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