EP2438767A1 - Bauelement mit einer mikromechanischen mikrofonstruktur und verfahren zu dessen herstellung - Google Patents
Bauelement mit einer mikromechanischen mikrofonstruktur und verfahren zu dessen herstellungInfo
- Publication number
- EP2438767A1 EP2438767A1 EP10715187A EP10715187A EP2438767A1 EP 2438767 A1 EP2438767 A1 EP 2438767A1 EP 10715187 A EP10715187 A EP 10715187A EP 10715187 A EP10715187 A EP 10715187A EP 2438767 A1 EP2438767 A1 EP 2438767A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- membrane
- microphone
- sacrificial layer
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Definitions
- the invention relates to a component with a micromechanical microphone structure.
- the microphone structure comprises an acoustically active membrane, which acts as a deflectable electrode of a microphone capacitor, a fixed acoustically permeable counter element, which acts as a counter electrode of the microphone capacitor, and means for detecting and evaluating the capacitance changes of the microphone capacitor.
- the membrane is realized in a membrane layer over the semiconductor substrate of the device and spans a sound opening in the back of the substrate.
- the counter element is formed in a further layer over the membrane.
- the invention relates to a method for producing such components in the wafer composite and subsequent separation.
- the micromechanical microphone structure is realized in a layer structure over a semiconductor substrate.
- the perforated counter element here forms a base-like elevation in the device surface and is adapted to the size of the underlying membrane. This spans a sound opening in the back of the substrate. Between the counter element and the membrane there is an air gap, which was produced by sacrificial layer etching.
- the rigidity of the counter element depends substantially on its peripheral shape, ie on the shape of the base edge region, by which the counter element is kept at a distance from the diaphragm. For cost reasons, the production of such microphone components takes place as far as possible in the wafer composite. Usually, a multiplicity of microphone structures arranged in a grid are produced on a semiconductor wafer for this purpose. Only then are the components separated. In this case, the very fragile and sensitive to water structure of the known microphone component proves problematic.
- the separation of micromechanical microphone components of the type mentioned above is done so far with the help of special processes.
- Particularly often the so-called stealth dicing is used are generated in the predetermined breaking points in the wafer material.
- the wafer is broken into individual chips along these predetermined breaking points, partly with the aid of a doctor blade.
- additional investment costs are required.
- the process times of the typically used 400 .mu.m to 800 .mu.m thick wafers are relatively long, not least because of the high number of required "laser cuts".
- the invention it has been recognized that it has an advantageous effect on the rigidity of the mating element of the microphone structure when the mating element is formed in a relatively thick layer which extends over the entire component surface and compensates for differences in level.
- the counter element is integrated with equal rigidity on all sides, the strength essentially depending only on the layer thickness.
- the thus modified microphone structure of the known component can be easily manufactured in a sequence of processes of surface and surface micromechanics, as already used in the production of inertial sensors.
- the largely flat component surface simplifies in particular the separation of the microphone components according to the invention, which will be explained in more detail in connection with the production method according to the invention.
- the membrane layer of the microphone device according to the invention is realized in the form of a thin polysilicon layer which is electrically insulated from the semiconductor substrate by a first insulating layer, and if the counter element in a thick epi-polysilicon layer is formed which is electrically insulated from the membrane layer by a second insulation layer.
- the layer thickness of this second insulation layer determines the distance between the membrane and the counter element.
- the acoustic properties of the microphone component in question here are determined not only by the distance between the membrane and the counter element, but also by the intrinsic stresses in the layer structure and in particular in the membrane. Uncontrolled voltages within the membrane can lead to undesired deflection of the membrane and thus alter the sensitivity-determining properties of the microphone capacitor. Therefore, a stress-relaxing spring suspension for the membrane is formed in the membrane layer of an advantageous development of the microphone component according to the invention.
- the spring elements here thus consist of the same material as the membrane and, if possible, are designed so that they compensate for the layer stresses which occur during the production of the thin polysilicon layer and are difficult to control. Due to this layer stress compensation, the sound pressure sensitivity of the membrane is determined essentially only by its flexural rigidity.
- the spring suspension of the membrane also contributes to the maximization of the microphone use signal, since a sound pressure induced deformation preferably occurs in the region of the spring elements, while the contributing to the measuring capacity membrane is deflected almost plane parallel to the counter electrode.
- the influence of occurring in the connection region of the membrane parasitic capacitances is comparatively low due to the recesses between the spring elements. Therefore, the resonant frequency of the membrane and thus the acoustic working range of the microphone component according to the invention on the design of the spring suspension in conjunction with a defined predeterminable layer thickness of the membrane can be very easily controlled.
- the spring suspension advantageously comprises at least three spring elements.
- the fixed points of these spring elements can be embedded between the first and the second insulating layer and thus connected to the semiconductor substrate and the counter element.
- the spring elements can also be connected via one of the two insulation layers either to the semiconductor substrate or to the counterelement.
- a particularly advantageous method for producing such components is also proposed. Accordingly, a first electrically insulating applied sacrificial layer on a semiconductor substrate. A membrane layer is then applied to this first sacrificial layer and patterned in order to produce for each component at least one membrane with a spring suspension. Thereafter, a second electrically insulating sacrificial layer is applied to the structured membrane layer, to which then at least one further layer is applied and patterned in order to produce an acoustically permeable counter element for each membrane. In addition, at least one sound opening is produced under each membrane in the rear side of the semiconductor substrate. The first sacrificial layer and the second sacrificial layer are now removed at least in the area below and above each membrane and its spring suspension. Only after the exposure of the microphone structures, the components are finally isolated.
- a thin polysilicon layer is advantageously deposited on the first sacrificial layer.
- the process sequence of this method variant for producing a microphone component is based on a proven and easily controllable method for the production of inertial sensors.
- the polysilicon layer used according to the invention as a membrane layer is used in the case of the production of inertial sensors for the realization of buried interconnects.
- the thick epi-polysilicon layer in which the counter elements according to the invention are realized serves as a functional layer.
- the first and the second electrically insulating sacrificial layer have the function of an electrical insulation between the two electrodes of the microphone capacitor and with respect to the semiconductor substrate.
- the membranes are exposed using the sacrificial layers.
- these sacrificial layers may additionally each have the function of an etch stop boundary.
- the second sacrificial layer advantageously acts as an etch stop in the structuring of the counterelements or the thick epi-polysilicon layer, if this takes place in an anisotropic etching process, in particular in a trench process or in a DRIE process.
- the first sacrificial layer advantageously acts as an etch stop in the generation of the Sound openings in an anisotropic etching process, especially in a DRIE process.
- the first sacrificial layer and the second sacrificial layer are advantageously removed in an isotropic etching process, wherein the etching attack takes place via the sound openings and through passage openings in the counterelements.
- SiO 2 or SiGe are particularly suitable as sacrificial layer materials.
- a sacrificial SiGe layer with CIF3 as the etching gas is particularly advantageous because of the high selectivity of the etching process compared to numerous materials used in microsystem technology, and in particular to silicon.
- This etching process is characterized by its high etching speed and the large undercuts that can be achieved with it.
- SiGe sacrificial layers are particularly stress-free, so that relatively thick sacrificial layers and thus large electrode spacings can be realized with this material, without additional stresses being introduced into the component structure. This increases the freedom of design in the design of the microphone component.
- the microphone structures according to the invention are exposed in the composite and only then separated.
- a particularly advantageous variant of the method according to the invention makes use of the structure of the microphone component according to the invention, namely that the layer in which the counter-elements are realized, located at the top of the layer structure and that this layer is relatively thick and stable and according to the invention largely flat ,
- These layer properties allow the application of a protective film that reliably prevents the penetration of particles and liquid into the microphone structures.
- the microphone components can be singulated in a sawing process standardized in micromechanics, which has enormous cost advantages compared with the methods currently used for singulating microphone components.
- the protective film is removed as far as possible without residue.
- a protective film which loses its adhesive power by UV irradiation or by a heat treatment or by UV irradiation in combination with a heat treatment.
- a protective film can easily under vacuum the largely flat surface of the layer structure are laminated and after the separation process by a UV irradiation in combination with a heat treatment without residue and without the microphone structures to be damaged again detached from the component surfaces.
- FIG. 1 shows a schematic sectional view through the microphone structure of a component 10 according to the invention
- FIG. 1 illustrates, on the basis of schematic sectional representations of the layer structure, the method according to the invention for producing the microphone structure shown in FIG. 1,
- Fig. 3 shows the top view of a circular diaphragm with spring suspension of a microphone component according to the invention
- FIGS. 4a to 4f illustrate, on the basis of schematic sectional representations, the singling process according to the invention of microphone structures generated in the wafer composite.
- the component 10 shown in FIG. 1 comprises a micromechanical microphone structure with a deflectable acoustically active membrane 1 1 and a fixed acoustically permeable counter element 12, which is also referred to as Backpla- te.
- the membrane 11 and the counter element 12 are realized here in a layer structure on a semiconductor substrate 1.
- a sound opening 13 is formed, which extends over the entire thickness of the semiconductor substrate 1 and is spanned by the arranged on the top of the semiconductor substrate 1 membrane 1 1.
- the membrane 1 1 is realized in a thin polysilicon layer 3 and electrically insulated by a first insulating layer 2 against the semiconductor substrate 1.
- the deflectability of the thin membrane 11 is favored by its formed in the polysilicon layer 3 spring suspension 14.
- the counter element 12 is formed in a relatively thick epi-polysilicon layer 5 over the membrane 11 and fixedly connected to the layer structure.
- the counter element 12 is electrically insulated both against the membrane 1 1 and against the semiconductor substrate 1 via a second insulation layer 4.
- the thickness of this second insulating layer 4 also determines the distance between the membrane 1 1 and counter element 12 in the idle state.
- passage openings 15 are formed, so that the counter element 12 is acoustically permeable and does not impair the sound-induced deflections of the diaphragm 11.
- the membrane 11 and the counter-element 12 form the electrodes of a microphone capacitor whose capacitance changes with the distance between the diaphragm 11 and the counter-element 12.
- a charging voltage is applied between the diaphragm 11 and the counter electrode 12, which is also referred to as a bias voltage.
- the means for detecting and evaluating the capacitance changes of the microphone capacitor are not shown here in detail.
- the epi-polysilicon layer 5, in which the counter-element 12 is formed extends over the entire device surface and compensates for differences in level, so that the entire device surface corresponding to this epi-polysilicon layer 5 is substantially planar. This proves to be particularly advantageous in connection with the separation of these components, which will be explained in more detail below in connection with FIGS. 4a to 4f.
- a first electrically insulating sacrificial layer 2 was applied to the wafer front side. This may be an SiO 2 layer or even a SiGe layer.
- a membrane layer 3 was then deposited and patterned to produce at least one membrane with a spring suspension for each component.
- Fig. 3 An example of such a membrane structure is shown in Fig. 3 and will be explained in more detail in connection with this figure.
- the membrane layer 3 is a polysilicon layer whose layer thickness is between 0.1 ⁇ m and 3 ⁇ m, depending on the requirements of the microphone component.
- 2b shows the layer structure after a second electrically insulating sacrificial layer 4 has been applied to the structured membrane layer 3 and structured.
- the electrical contacting of the microphone structure was prepared here.
- the same material is selected for the two sacrificial layers 2 and 4, which can then be removed in a subsequent process stage in a common etching process from the front and from the back of the membranes.
- a thick epi-polysilicon layer 5 was then formed, which is shown in Fig. 2c.
- the layer material is advantageously grown epitaxially from the gas phase starting from a starting layer of thin LPCVD polysilicon.
- the thickness of an epi-polysilicon layer 5 thus produced can be of the order of magnitude of 3 ⁇ m to 20 ⁇ m, depending on the requirements of the microphone component.
- FIG. 2c illustrates that the layer structure has been leveled by means of the epi-polysilicon layer 5, which is favored by the deposition method in conjunction with the relatively large layer thickness.
- planar surface of the epi-polysilicon layer 5 has now been provided with a structured metallization 6, which likewise serves for contacting the individual components of the microphone structures.
- a structured metallization 6 can also be applied to the layer structure at a later time in the production process.
- FIG. 2 d shows the layer structure after the structuring of the epi-polysilicon layer 5 in an anisotropic trench process or in a DRIE process.
- the second sacrificial layer 4 was used as ⁇ tzstopp hierarchy.
- the counter-elements 12 of the microphone structures within the epi-polysilicon layer 5 were exposed and provided with passage openings 15.
- the trench trenches 7 serve not only to define but also to electrically decouple individual regions of the epi-polysilicon layer 5.
- the contact regions 16 and 17 for the substrate 1 and the membranes have also been defined.
- the sound openings 13 were generated in an anisotropic DRIE process emanating from the substrate rear side, which is illustrated in FIG. 2e.
- the sacrificial layer 2 formed the etch stop boundary for this backside etching process, which can just as well be performed before the structuring of the epi-polysilicon layer 5.
- the diaphragms 11 of the microphone structures and the associated spring suspensions 14 were exposed by means of isotropic sacrificial layer etching.
- the required etching attack took place simultaneously from both sides of the layer structure.
- the etching gas reached the sacrificial layer 4 from the front side via the trench troughs 7 and the through openings 15 and from the rear side via the sound openings 13 to the sacrificial layer 2.
- the sacrificial layer material is preferably dissolved out with HF vapor.
- CIF3 is used as the etching gas.
- FIG. 2f shows the microphone structure shown in FIG. 1 as a result of this etching process and illustrates that the distance between membrane 11 and counterelement 12 is determined by the layer thickness of the sacrificial layer 4.
- the membranes of the microphone components according to the invention are realized together with their spring suspensions in a thin polysilicon layer.
- the spring elements of the individual membranes are designed as much as possible so that the membranes are largely independent of the layer tension of the membrane material suspended.
- 3 shows an advantageous layout for the spring suspension of a circular diaphragm 30.
- the diaphragm 30 is here suspended from a total of six spring elements 31.
- the spring elements 31 are realized in the form of curved webs which are arranged along the circumference of the membrane and each extend over one sixth of the circumference of the membrane. An end to a the spring element 31 is connected to the membrane 30, while the other end is integrated into the surrounding edge region of the layer structure.
- these ends of the spring elements 31 may, for example, be embedded between the two sacrificial layers in such a way that they are connected both to the counter element and to the substrate. Alternatively, however, these spring ends can also be connected on one side only to either the counter element or the substrate.
- the spring suspension shown here is designed so that it can compensate for the occurring during the production of the polysilicon membrane layer and difficult to control layer voltages, at least within certain limits, when the polysilicon was deposited Tensile, as well as when it was deposited compressively.
- the membrane 30 shown here is stably suspended via the spring elements 31. The deformation during pressurization takes place mainly in the region of the spring elements 31. As a result, the membrane surface acting as the movable electrode, which is decisive for the microphone function, is deflected approximately plane-parallel to the counter element, which has a favorable effect on the microphone user signal.
- a simple electronic function is provided as overload protection for the microphone structure.
- the transmitter automatically detects a striking of the membrane on the counter element, which in case of overload, e.g. at very high sound pressure or shock.
- the bias voltage is temporarily interrupted. In the tension-free state, the membrane can then automatically detach again from the counter element.
- This concept is particularly suitable for bias voltages of less than 5 V, since at these low bias voltages no electrical welding between the diaphragm and the counter element can take place.
- a protective film 41 with special adhesive properties is applied to the largely planar upper side of the layer structure 40, which is shown in FIG. 4a.
- This protective film 41 loses its adhesive force when exposed to UV light in combination with heat, which allows a simple, residue-free detachment of the protective film 41 after the singulation process.
- FIG. 4 b shows the layer structure 40 with the protective film 41 after it has been glued onto a saw frame covered with a sawing foil 42.
- the sawing foil 42 must be heat-resistant at least to the extent that it is insensitive to temperatures at which the protective foil 41 loses its adhesive force.
- the adhesive force of the protective film 41 and the adhesive force of the sawing film 42 must each be so large that chips with a chip size of, for example, 1x1 mm 2 adhere during a sawing process.
- the layer structure 40 and in particular the microphone structures exposed in the layer structure 40 are protected by the protective film 41, the layer structure 40 can now be sawn with the aid of a water-cooled circular saw.
- the protective film 41 effectively prevents the penetration of water or sawing particles into the microphone structures.
- the layer structure 40 with the protective film 41 is already sawn. However, the individual components 50 still adhere to the continuous sawing foil 42.
- the protective film 41 can be removed from the top of the individual components 50. For this, it is first exposed to UV radiation. This is followed by a temperature treatment, during which the laminated protective film 41 completely dissolves from the top of the component. Accordingly, after the temperature treatment on each component 50 pieces of film that can be sucked off or blown off. In the embodiment described here, the film pieces are taken with a stamping process, which is shown in Figs. 4d and 4e. For this purpose, a second wafer 43 is used, on the stamp surface of which a two-sided adhesive film 44, a soft polymer layer or a soft lacquer layer has been applied. Thereafter, the sawing foil 42 can be expanded and the individual components 50 can be picked and packaged with pick-and-place tools from the sawing foil 42, as illustrated by FIG. 4f.
- the microphone structure according to the invention with a largely planar component surface allows the application of a protective film on top of the wafer layer structure.
- the microphone components according to the invention can be singulated in a standard sawing process, wherein the additional process complexity caused by the application and removal of a second film is negligible.
- the protective film 41 itself is also relatively inexpensive, its use within the scope of the singulation method contributes only insignificantly to the overall costs of a single component.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
- Lock And Its Accessories (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200910026682 DE102009026682A1 (de) | 2009-06-03 | 2009-06-03 | Bauelement mit einer mikromechanischen Mikrofonstruktur und Verfahren zu dessen Herstellung |
PCT/EP2010/054583 WO2010139498A1 (de) | 2009-06-03 | 2010-04-07 | Bauelement mit einer mikromechanischen mikrofonstruktur und verfahren zu dessen herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2438767A1 true EP2438767A1 (de) | 2012-04-11 |
EP2438767B1 EP2438767B1 (de) | 2013-01-30 |
Family
ID=42312804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP20100715187 Not-in-force EP2438767B1 (de) | 2009-06-03 | 2010-04-07 | Bauelement mit einer mikromechanischen mikrofonstruktur und verfahren zu dessen herstellung |
Country Status (5)
Country | Link |
---|---|
US (1) | US8637945B2 (de) |
EP (1) | EP2438767B1 (de) |
JP (2) | JP2012529207A (de) |
DE (1) | DE102009026682A1 (de) |
WO (1) | WO2010139498A1 (de) |
Families Citing this family (16)
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US9084048B1 (en) | 2010-06-17 | 2015-07-14 | Shindig, Inc. | Audio systems and methods employing an array of transducers optimized for particular sound frequencies |
US9544678B2 (en) * | 2011-01-12 | 2017-01-10 | Blackberry Limited | Printed circuit board with an acoustic channel for a microphone |
JP5775409B2 (ja) * | 2011-09-29 | 2015-09-09 | スタンレー電気株式会社 | 光スキャナの製造方法 |
DE112011105850B4 (de) | 2011-11-14 | 2020-02-27 | Tdk Corporation | MEMS-Mikrofon mit reduzierter parasitärer Kapazität |
US9258652B2 (en) * | 2011-11-18 | 2016-02-09 | Chuan-Wei Wang | Microphone structure |
DE102012210052B4 (de) * | 2012-06-14 | 2023-12-14 | Robert Bosch Gmbh | Hybrid integriertes Bauteil und Verfahren zu dessen Herstellung |
US9181086B1 (en) | 2012-10-01 | 2015-11-10 | The Research Foundation For The State University Of New York | Hinged MEMS diaphragm and method of manufacture therof |
DE102012218501A1 (de) * | 2012-10-11 | 2014-04-17 | Robert Bosch Gmbh | Bauelement mit einer mikromechanischen Mikrofonstruktur |
EP3003965B1 (de) | 2013-05-31 | 2019-08-07 | Robert Bosch GmbH | Gefangene membran |
DE102013212173B4 (de) | 2013-06-26 | 2016-06-02 | Robert Bosch Gmbh | MEMS-Bauelement mit einer auslenkbaren Membran und einem feststehenden Gegenelement sowie Verfahren zu dessen Herstellung |
US9439017B2 (en) * | 2014-02-10 | 2016-09-06 | Infineon Technologies Ag | Method for manufacturing a plurality of microphone structures, microphone and mobile device |
CN103888887A (zh) * | 2014-03-27 | 2014-06-25 | 上海集成电路研发中心有限公司 | 一种mems麦克风芯片切割方法 |
US9736590B2 (en) * | 2014-06-06 | 2017-08-15 | Infineon Technologies Ag | System and method for a microphone |
KR101807146B1 (ko) * | 2016-09-09 | 2017-12-07 | 현대자동차 주식회사 | 고감도 마이크로폰 및 그 제조 방법 |
KR102212575B1 (ko) | 2017-02-02 | 2021-02-04 | 현대자동차 주식회사 | 마이크로폰 및 그 제조 방법 |
KR20230158478A (ko) * | 2021-03-23 | 2023-11-20 | 니신보 마이크로 디바이즈 인크. | Mems 소자 및 그 제조 방법 |
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JPH08230093A (ja) * | 1995-03-01 | 1996-09-10 | Lintec Corp | 表面保護シートの剥離方法 |
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DE102007029911A1 (de) | 2007-06-28 | 2009-01-02 | Robert Bosch Gmbh | Akustisches Sensorelement |
GB2452941B (en) * | 2007-09-19 | 2012-04-11 | Wolfson Microelectronics Plc | Mems device and process |
-
2009
- 2009-06-03 DE DE200910026682 patent/DE102009026682A1/de not_active Withdrawn
-
2010
- 2010-04-07 JP JP2012513519A patent/JP2012529207A/ja active Pending
- 2010-04-07 EP EP20100715187 patent/EP2438767B1/de not_active Not-in-force
- 2010-04-07 WO PCT/EP2010/054583 patent/WO2010139498A1/de active Application Filing
- 2010-04-07 US US13/259,570 patent/US8637945B2/en not_active Expired - Fee Related
-
2014
- 2014-02-04 JP JP2014019784A patent/JP2014090514A/ja active Pending
Non-Patent Citations (1)
Title |
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See references of WO2010139498A1 * |
Also Published As
Publication number | Publication date |
---|---|
US20120091544A1 (en) | 2012-04-19 |
DE102009026682A1 (de) | 2010-12-09 |
EP2438767B1 (de) | 2013-01-30 |
US8637945B2 (en) | 2014-01-28 |
JP2014090514A (ja) | 2014-05-15 |
WO2010139498A1 (de) | 2010-12-09 |
DE102009026682A9 (de) | 2013-01-03 |
JP2012529207A (ja) | 2012-11-15 |
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