EP2433302A2 - Cellules photovoltaïques en couche mince souples partiellement transparentes et leur procédé de production - Google Patents

Cellules photovoltaïques en couche mince souples partiellement transparentes et leur procédé de production

Info

Publication number
EP2433302A2
EP2433302A2 EP10734025A EP10734025A EP2433302A2 EP 2433302 A2 EP2433302 A2 EP 2433302A2 EP 10734025 A EP10734025 A EP 10734025A EP 10734025 A EP10734025 A EP 10734025A EP 2433302 A2 EP2433302 A2 EP 2433302A2
Authority
EP
European Patent Office
Prior art keywords
film solar
solar cells
flexible
thin
flexible thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10734025A
Other languages
German (de)
English (en)
Inventor
Steffen Ragnow
Alexander Braun
Karsten Otte
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OC3 AG
Original Assignee
Solarion AG Photovotaik
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solarion AG Photovotaik filed Critical Solarion AG Photovotaik
Publication of EP2433302A2 publication Critical patent/EP2433302A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0468—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising specific means for obtaining partial light transmission through the module, e.g. partially transparent thin film solar modules for windows
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a process for producing semi-transparent flexible thin-film solar cells, which can be used both in architecture and in the automotive industry.
  • thin-film solar cells are connected to a solid support, usually glass, and scored with laser beams.
  • the result is an opening through which light can pass through and thus creates the transparency.
  • transparent carriers in particular with glass as carrier.
  • expensive production technology such as Laser technology, necessary to create crossing points.
  • crystalline silicon wafers are milled in such a way that a cross lattice is formed.
  • the crossing points are characterized by total material removal, so that here creates a transparency that is desired.
  • the invention aims to provide transparent or partially transparent thin-film solar cells in an economically justifiable manner. This is to be achieved by an intelligent procedure of production.
  • the thin-film solar cells according to the invention should have a balanced ratio of optical transparency and electrical power in order to meet the respective specific requirements of the field of application.
  • the invention has the object of specifying a method for producing transparent or partially transparent thin-film solar cells on a flexible support and to produce transparent or partially transparent thin-film solar cells by this method.
  • the object is achieved in that first a flexible thin-film solar cell is produced in a conventional manner by layer construction on a flexible support.
  • the flexible carrier may be a plastic such as polyimide, metal foil, thin ceramic, textile or the like.
  • the layer structure of the thin-film solar cell can lead to CuInSe 2 (CIS), Cu (In 1 Ga) Se 2 (CIGS), Cu (In 1 Ga) (Se 1 S) 2 (CIGSS) or CuGaSe 2 (CGS) or comparable thin-film solar cells.
  • flexible thin-film solar cells are processed with a tool in such a way that the entire cell structure, including the flexible carrier, is broken through. Suitable for this is, for example, a punch that creates openings as a pattern through the cell. The openings ensure transparency, they act as windows for the light, while the framework of the thin-film solar cells ensures their stability.
  • Particularly suitable tools are rotary punching tools, but also micro drills or laser beam arrangements.
  • the ratio of areas between the removed and remaining thin-film solar cell is 5: 1 to 1:60. Preference is given to a ratio of 1: 8. This ensures stability as well as transparency and limits the loss of energy conversion capacity.
  • the stamped thin-film solar cells are laminated between transparent rigid sheets or films, so that a rigid or flexible stability is ensured, which may be required in a number of applications. Extensive tests have determined which stamping patterns are particularly suitable for ensuring the stability of the flexible thin-film solar cell, ensuring transparency to the desired extent and keeping the energy yield at the required level.
  • This example 1 is not inventive and describes the manufacturing process of a CIGS thin-film solar cell, which is subsequently made partially transparent. The procedure is as follows:
  • a buffer layer over its entire area, preferably consisting of cadmium sulfide (CdS) in the wet-chemical bath, e.g. to DE 10 2007 036 715
  • the following variants have been realized: on (a): in addition to polyimide film, other temperature-stable polymer films, metal foils, glass substrates or composite materials (eg glass fiber reinforced textiles) have been used as substrates.
  • the molybdenum layer can also consist of several metal layers.
  • the compounds CuGaSe 2 , CuInSe 2 , CuGaS 2 , CuInS 2 , Cu (In 1 Ga) (S 1 Se) 2 have also been used as the photoactive layer.
  • the photoactive layer can also be represented by a printing process, a galvanic deposition or the sputtering of the metals and Cu, In, Ga and subsequent selenization.
  • the CdS layer has been replaced by alternative buffers such as ZnS, ZnSe, InS, InSe, ZnMgO, etc.
  • the process for producing partially transparent thin-film solar cells is based on functional thin-film solar cells and treats them as follows.
  • process step g) application of the contact grid
  • the cells are separated into required sizes by means of a rotary die.
  • areas are punched out between the contact fingers with the same rotary die to achieve partial transparency.
  • the punched out areas can have any shapes such as rectangles, squares, stars, crosses, etc. (each with or without rounded corners). Preferred shapes are circles. For circles there is the least risk of tearing and thus damage to the flexible thin-film solar cell.
  • the entire layer structure of the solar cell including the flexible substrate is severed.
  • any mechanical punching such as punching
  • Flat bed punches, micro drills or lasers are used.
  • the punching tool used is a rotary die cutter. After treatment, the cells have the following parameters.
  • Example cell 1 Example cell 2
  • the punching can also take place before the application of the contact fingers (process step g) or before the structuring trenches (process step f) are produced.
  • Example 3 The flexible thin-film solar cells are fixed and contacted between two transparent rigid bearing surfaces, namely glass plates.
  • the thin-film solar cells are fixed and contacted between two transparent flexible bearing surfaces, namely transparent plastic films.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)

Abstract

L'invention vise à fournir des cellules photovoltaïques en couche mince souples transparentes et partiellement transparentes. A cet effet, on usine des cellules photovoltaïques en couche mince souples à l'aide d'un outil de sorte que l'ensemble de la structure cellulaire est perforé, la transparence étant assurée par les ouvertures ainsi créées et le rendement de la conversion énergétique restant élevé. La figure présente un exemple de cellule photovoltaïque en couche mince souple selon l'invention.
EP10734025A 2009-05-23 2010-05-24 Cellules photovoltaïques en couche mince souples partiellement transparentes et leur procédé de production Withdrawn EP2433302A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009022378A DE102009022378B4 (de) 2009-05-23 2009-05-23 Verfahren zur Herstellung von teiltransparenten flexiblen Dünnschichtsolarzellen und teiltransparente flexible Dünnschichtsolarzelle
PCT/EP2010/003159 WO2010136166A2 (fr) 2009-05-23 2010-05-24 Cellules photovoltaïques en couche mince souples partiellement transparentes et leur procédé de production

Publications (1)

Publication Number Publication Date
EP2433302A2 true EP2433302A2 (fr) 2012-03-28

Family

ID=43223149

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10734025A Withdrawn EP2433302A2 (fr) 2009-05-23 2010-05-24 Cellules photovoltaïques en couche mince souples partiellement transparentes et leur procédé de production

Country Status (5)

Country Link
US (1) US20120125411A1 (fr)
EP (1) EP2433302A2 (fr)
CN (1) CN102439732A (fr)
DE (1) DE102009022378B4 (fr)
WO (1) WO2010136166A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8834664B2 (en) 2010-10-22 2014-09-16 Guardian Industries Corp. Photovoltaic modules for use in vehicle roofs, and/or methods of making the same
CN104395081B (zh) * 2012-04-18 2016-12-07 葛迪恩实业公司 用于车顶的被改进的光伏模块和/或其制备方法
FR2997227B1 (fr) * 2012-10-23 2015-12-11 Crosslux Dispositif photovoltaique a couches minces, notamment pour vitrage solaire
FR2997226B1 (fr) * 2012-10-23 2016-01-01 Crosslux Procede de fabrication d’un dispositif photovoltaique a couches minces, notamment pour vitrage solaire
US9812592B2 (en) 2012-12-21 2017-11-07 Sunpower Corporation Metal-foil-assisted fabrication of thin-silicon solar cell
CN104425637A (zh) * 2013-08-30 2015-03-18 中国建材国际工程集团有限公司 部分透明的薄层太阳能模块

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6316283B1 (en) * 1998-03-25 2001-11-13 Asulab Sa Batch manufacturing method for photovoltaic cells

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US4704369A (en) * 1985-04-01 1987-11-03 Energy Conversion Devices, Inc. Method of severing a semiconductor device
US4795500A (en) * 1985-07-02 1989-01-03 Sanyo Electric Co., Ltd. Photovoltaic device
DE4201571C2 (de) * 1991-01-25 1993-10-14 Phototronics Solartechnik Gmbh Verfahren zur Herstellung einer für Licht teildurchlässigen Solarzelle und eines entsprechenden Solarmoduls
FR2673328A1 (fr) * 1991-02-21 1992-08-28 Solems Sa Dispositif et module solaire a structure inversee pouvant presenter une transparence partielle.
US5176758A (en) * 1991-05-20 1993-01-05 United Solar Systems Corporation Translucent photovoltaic sheet material and panels
JP3055104B2 (ja) * 1998-08-31 2000-06-26 亜南半導体株式会社 半導体パッケ―ジの製造方法
WO2002005352A2 (fr) * 2000-07-06 2002-01-17 Bp Corporation North America Inc. Modules photovoltaiques partiellement transparents
JP2002299672A (ja) * 2001-01-26 2002-10-11 Ebara Corp 太陽電池及びその製造方法
DE102004057663B4 (de) * 2004-09-15 2015-08-20 Sunways Ag Solarmodul mit durch regulär angeordnete Löcher semitransparenten kristallinen Solarzellen und Verfahren zur Herstellung
JP4681352B2 (ja) * 2005-05-24 2011-05-11 本田技研工業株式会社 カルコパイライト型太陽電池
US20090114262A1 (en) * 2006-08-18 2009-05-07 Adriani Paul M Methods and Devices for Large-Scale Solar Installations
DE102007036715B4 (de) * 2007-08-05 2011-02-24 Solarion Ag Verfahren und Vorrichtung zur Herstellung flexibler Dünnschichtsolarzellen

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6316283B1 (en) * 1998-03-25 2001-11-13 Asulab Sa Batch manufacturing method for photovoltaic cells

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2010136166A2 *

Also Published As

Publication number Publication date
WO2010136166A2 (fr) 2010-12-02
US20120125411A1 (en) 2012-05-24
DE102009022378B4 (de) 2013-02-07
DE102009022378A1 (de) 2011-01-27
CN102439732A (zh) 2012-05-02
WO2010136166A3 (fr) 2011-10-20

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