EP2433302A2 - Partially transparent flexible thin film solar cells and method for the production thereof - Google Patents

Partially transparent flexible thin film solar cells and method for the production thereof

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Publication number
EP2433302A2
EP2433302A2 EP10734025A EP10734025A EP2433302A2 EP 2433302 A2 EP2433302 A2 EP 2433302A2 EP 10734025 A EP10734025 A EP 10734025A EP 10734025 A EP10734025 A EP 10734025A EP 2433302 A2 EP2433302 A2 EP 2433302A2
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EP
European Patent Office
Prior art keywords
film solar
solar cells
flexible
thin
flexible thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
EP10734025A
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German (de)
French (fr)
Inventor
Steffen Ragnow
Alexander Braun
Karsten Otte
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OC3 AG
Original Assignee
Solarion AG Photovotaik
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Publication date
Application filed by Solarion AG Photovotaik filed Critical Solarion AG Photovotaik
Publication of EP2433302A2 publication Critical patent/EP2433302A2/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0468—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising specific means for obtaining partial light transmission through the module, e.g. partially transparent thin film solar modules for windows
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a process for producing semi-transparent flexible thin-film solar cells, which can be used both in architecture and in the automotive industry.
  • thin-film solar cells are connected to a solid support, usually glass, and scored with laser beams.
  • the result is an opening through which light can pass through and thus creates the transparency.
  • transparent carriers in particular with glass as carrier.
  • expensive production technology such as Laser technology, necessary to create crossing points.
  • crystalline silicon wafers are milled in such a way that a cross lattice is formed.
  • the crossing points are characterized by total material removal, so that here creates a transparency that is desired.
  • the invention aims to provide transparent or partially transparent thin-film solar cells in an economically justifiable manner. This is to be achieved by an intelligent procedure of production.
  • the thin-film solar cells according to the invention should have a balanced ratio of optical transparency and electrical power in order to meet the respective specific requirements of the field of application.
  • the invention has the object of specifying a method for producing transparent or partially transparent thin-film solar cells on a flexible support and to produce transparent or partially transparent thin-film solar cells by this method.
  • the object is achieved in that first a flexible thin-film solar cell is produced in a conventional manner by layer construction on a flexible support.
  • the flexible carrier may be a plastic such as polyimide, metal foil, thin ceramic, textile or the like.
  • the layer structure of the thin-film solar cell can lead to CuInSe 2 (CIS), Cu (In 1 Ga) Se 2 (CIGS), Cu (In 1 Ga) (Se 1 S) 2 (CIGSS) or CuGaSe 2 (CGS) or comparable thin-film solar cells.
  • flexible thin-film solar cells are processed with a tool in such a way that the entire cell structure, including the flexible carrier, is broken through. Suitable for this is, for example, a punch that creates openings as a pattern through the cell. The openings ensure transparency, they act as windows for the light, while the framework of the thin-film solar cells ensures their stability.
  • Particularly suitable tools are rotary punching tools, but also micro drills or laser beam arrangements.
  • the ratio of areas between the removed and remaining thin-film solar cell is 5: 1 to 1:60. Preference is given to a ratio of 1: 8. This ensures stability as well as transparency and limits the loss of energy conversion capacity.
  • the stamped thin-film solar cells are laminated between transparent rigid sheets or films, so that a rigid or flexible stability is ensured, which may be required in a number of applications. Extensive tests have determined which stamping patterns are particularly suitable for ensuring the stability of the flexible thin-film solar cell, ensuring transparency to the desired extent and keeping the energy yield at the required level.
  • This example 1 is not inventive and describes the manufacturing process of a CIGS thin-film solar cell, which is subsequently made partially transparent. The procedure is as follows:
  • a buffer layer over its entire area, preferably consisting of cadmium sulfide (CdS) in the wet-chemical bath, e.g. to DE 10 2007 036 715
  • the following variants have been realized: on (a): in addition to polyimide film, other temperature-stable polymer films, metal foils, glass substrates or composite materials (eg glass fiber reinforced textiles) have been used as substrates.
  • the molybdenum layer can also consist of several metal layers.
  • the compounds CuGaSe 2 , CuInSe 2 , CuGaS 2 , CuInS 2 , Cu (In 1 Ga) (S 1 Se) 2 have also been used as the photoactive layer.
  • the photoactive layer can also be represented by a printing process, a galvanic deposition or the sputtering of the metals and Cu, In, Ga and subsequent selenization.
  • the CdS layer has been replaced by alternative buffers such as ZnS, ZnSe, InS, InSe, ZnMgO, etc.
  • the process for producing partially transparent thin-film solar cells is based on functional thin-film solar cells and treats them as follows.
  • process step g) application of the contact grid
  • the cells are separated into required sizes by means of a rotary die.
  • areas are punched out between the contact fingers with the same rotary die to achieve partial transparency.
  • the punched out areas can have any shapes such as rectangles, squares, stars, crosses, etc. (each with or without rounded corners). Preferred shapes are circles. For circles there is the least risk of tearing and thus damage to the flexible thin-film solar cell.
  • the entire layer structure of the solar cell including the flexible substrate is severed.
  • any mechanical punching such as punching
  • Flat bed punches, micro drills or lasers are used.
  • the punching tool used is a rotary die cutter. After treatment, the cells have the following parameters.
  • Example cell 1 Example cell 2
  • the punching can also take place before the application of the contact fingers (process step g) or before the structuring trenches (process step f) are produced.
  • Example 3 The flexible thin-film solar cells are fixed and contacted between two transparent rigid bearing surfaces, namely glass plates.
  • the thin-film solar cells are fixed and contacted between two transparent flexible bearing surfaces, namely transparent plastic films.

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Sustainable Development (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)

Abstract

The aim of the invention is to provide transparent and partially transparent flexible thin film solar cells. The aim is achieved in that flexible thin film solar cells are processed using a tool, such that the entire cell structure is pierced, the transparency is ensured by the openings thus created, and the energy conversion yield remains high. An example is a flexible thin film solar cell according to the figure.

Description

Teiltransparente flexible Dünnschichtsolarzellen und Verfahren zu ihrer Herstellung Semitransparent flexible thin film solar cells and methods of making the same
Die Erfindung betrifft ein Verfahren zur Herstellung teiltransparenter flexibler Dünnschichtsolarzellen, die sowohl in der Architektur als auch in der Autoindustrie angewendet werden können.The invention relates to a process for producing semi-transparent flexible thin-film solar cells, which can be used both in architecture and in the automotive industry.
Es ist bereits bekannt, teiltransparente Dünnschichtsolarzellen herzustellen. Zu diesem Zweck werden Dünnschichtsolarzellen auf einem festen Träger, meistens Glas, verschaltet und mit Laserstrahlen geritzt. Es entsteht eine Öffnung, durch welche Licht durchtreten kann und damit die Transparenz erzeugt. Dies funktioniert naturgemäß nur bei transparenten Trägern, insbesondere bei Glas als Träger. Zusätzlich ist die Verwendung einer teuren Produktionstechnologie, wie z.B. Lasertechnologie, zur Erzeugung der Kreuzungspunkte notwendig.It is already known to produce partially transparent thin-film solar cells. For this purpose, thin-film solar cells are connected to a solid support, usually glass, and scored with laser beams. The result is an opening through which light can pass through and thus creates the transparency. This naturally only works with transparent carriers, in particular with glass as carrier. In addition, the use of expensive production technology, such as Laser technology, necessary to create crossing points.
Es ist weiterhin bekannt, dass kristalline Silizium-Wafer dergestalt gefräst werden, dass ein Kreuzgitter entsteht. Dabei sind die Kreuzungspunkte durch totalen Materialabtrag gekennzeichnet, so dass hier eine Transparenz entsteht, die gewünscht ist.It is also known that crystalline silicon wafers are milled in such a way that a cross lattice is formed. The crossing points are characterized by total material removal, so that here creates a transparency that is desired.
Es ist bisher nicht bekannt, teiltransparente Dünnschichtsolarzellen auf flexiblem Trägermaterial herzustellen.It is not yet known to produce partially transparent thin-film solar cells on flexible carrier material.
Die Erfindung hat das Ziel, in ökonomisch vertretbarer Weise transparente oder teiltransparente Dünnschichtsolarzellen zur Verfügung zu stellen. Das soll durch einen intelligenten Verfahrensablauf der Herstellung erreicht werden. Die erfindungsgemäßen Dünnschichtsolarzellen sollen ein ausgewogenes Verhältnis von optischer Transparenz und elektrischer Leistung aufweisen, um den jeweiligen spezifischen Anforderungen des Einsatzgebietes gerecht zu werden.The invention aims to provide transparent or partially transparent thin-film solar cells in an economically justifiable manner. This is to be achieved by an intelligent procedure of production. The thin-film solar cells according to the invention should have a balanced ratio of optical transparency and electrical power in order to meet the respective specific requirements of the field of application.
Die Erfindung hat die Aufgabe, ein Verfahren zur Herstellung transparenter oder teiltransparenter Dünnschichtsolarzellen auf einem flexiblen Träger anzugeben und nach diesem Verfahren transparente oder teiltransparente Dünnschichtsolarzellen herzustellen. Die Aufgabe wird dadurch gelöst, dass zunächst eine flexible Dünnschichtsolarzelle in an sich bekannter Weise durch Schichtaufbau auf einem flexiblen Träger hergestellt wird. Der flexible Träger kann dabei ein Kunststoff wie Polyimid, Metallfolie, dünne Keramik, Textil oder dergleichen sein. Der Schichtaufbau der Dünnschichtsolarzelle kann zu CuInSe2 (CIS), Cu(In1Ga)Se2 (CIGS), Cu(In1Ga)(Se1S)2 (CIGSS) oder CuGaSe2 (CGS) oder vergleichbaren Dünnschichtsolarzellen führen.The invention has the object of specifying a method for producing transparent or partially transparent thin-film solar cells on a flexible support and to produce transparent or partially transparent thin-film solar cells by this method. The object is achieved in that first a flexible thin-film solar cell is produced in a conventional manner by layer construction on a flexible support. The flexible carrier may be a plastic such as polyimide, metal foil, thin ceramic, textile or the like. The layer structure of the thin-film solar cell can lead to CuInSe 2 (CIS), Cu (In 1 Ga) Se 2 (CIGS), Cu (In 1 Ga) (Se 1 S) 2 (CIGSS) or CuGaSe 2 (CGS) or comparable thin-film solar cells.
Erfindungsgemäß werden flexible Dünnschichtsolarzellen mit einem Werkzeug dergestalt bearbeitet, dass der gesamte Zellenaufbau einschließlich des flexiblen Trägers durchbrochen wird. Geeignet dazu ist zum Beispiel ein Stanzwerkzeug, das Öffnungen als ein Muster durch die Zelle erzeugt. Die Öffnungen gewährleisten die Transparenz, sie wirken als Fenster für das Licht, während das Gerüst der Dünnschichtsolarzellen die Stabilität derselben sichert.According to the invention, flexible thin-film solar cells are processed with a tool in such a way that the entire cell structure, including the flexible carrier, is broken through. Suitable for this is, for example, a punch that creates openings as a pattern through the cell. The openings ensure transparency, they act as windows for the light, while the framework of the thin-film solar cells ensures their stability.
Als Werkzeug besonders geeignet sind Rotationsstanzwerkzeuge, aber auch Mikro- bohrer oder Laserstrahlanordnungen.Particularly suitable tools are rotary punching tools, but also micro drills or laser beam arrangements.
Das Verhältnis der Flächen zwischen entfernter und verbliebener Dünnschichtsolarzelle beträgt 5:1 bis zu 1 :60. Bevorzugt ist ein Verhältnis von 1:8. Das gewährleistet sowohl Stabilität als auch Transparenz und begrenzt den Verlust an Energiewandlungskapazität.The ratio of areas between the removed and remaining thin-film solar cell is 5: 1 to 1:60. Preference is given to a ratio of 1: 8. This ensures stability as well as transparency and limits the loss of energy conversion capacity.
Die angesprochenen Flächenverhältnisse werden in Abbildung 1 gezeigt.The mentioned area ratios are shown in Figure 1.
In einer Ausführungsform der Erfindung werden die gestanzten Dünnschichtsolarzellen zwischen transparenten starren Platten bzw. Folien einlaminiert, so dass eine starre bzw. flexible Stabilität gewährleistet ist, die in einer Reihe von Anwendungsfällen gefordert sein kann. Durch umfangreiche Versuche wurde festgestellt, welche Stanzmuster sich besonders eignen, um einmal die Stabilität der flexiblen Dünnschichtsolarzelle zu sichern, die Transparenz im gewünschten Umfang zu gewährleisten und die Energieausbeute auf erforderlichem Niveau zu halten.In one embodiment of the invention, the stamped thin-film solar cells are laminated between transparent rigid sheets or films, so that a rigid or flexible stability is ensured, which may be required in a number of applications. Extensive tests have determined which stamping patterns are particularly suitable for ensuring the stability of the flexible thin-film solar cell, ensuring transparency to the desired extent and keeping the energy yield at the required level.
Die Erfindung soll nachstehend an Ausführungsbeispielen näher erläutert werden.The invention will be explained in more detail below by exemplary embodiments.
Beispiel 1example 1
Dieses Beispiel 1 ist nicht erfinderisch und beschreibt den Herstellungsprozess einer CIGS-Dünnschichtsolarzelle, die nachfolgend teiltransparent gestaltet wird. Es wird wie folgt verfahren:This example 1 is not inventive and describes the manufacturing process of a CIGS thin-film solar cell, which is subsequently made partially transparent. The procedure is as follows:
(a) ganzflächiges Abscheiden einer Molybdänschicht auf einer Polyimidfolie in bekannter Weise mittels DC-Sputtern.(a) Full-surface deposition of a molybdenum layer on a polyimide film in a known manner by means of DC sputtering.
(b) ganzflächiges Abscheiden der photoaktiven Halbleiterleiterschicht (Cu(In1Ga)Se2) mittels Vakuum-Koverdampfung der Elemente Kupfer (Cu), Indium (In), Gallium (Ga) und Selen (Se).(b) blanket deposition of the photoactive semiconductor conductor layer (Cu (In 1 Ga) Se 2 ) by vacuum co-evaporation of the elements copper (Cu), indium (In), gallium (Ga) and selenium (Se).
(c) ganzflächiges Abscheiden einer Pufferschicht, vorzugsweise bestehend aus Cadmiumsulfid (CdS) im nasschemischen Bad, z.B. nach DE 10 2007 036 715(c) depositing a buffer layer over its entire area, preferably consisting of cadmium sulfide (CdS) in the wet-chemical bath, e.g. to DE 10 2007 036 715
(d) ganzflächiges Abscheiden einer intrinsischen Zinkoxidschicht (i-ZnO) mittels RF- Sputtern.(d) Full-surface deposition of an intrinsic zinc oxide layer (i-ZnO) by means of RF sputtering.
(e) ganzflächiges Abscheiden einer Aluminium-dotierten Zinkoxidschicht (ZnO:AI) über DC-Sputtern.(e) full-surface deposition of an aluminum-doped zinc oxide layer (ZnO: Al) via DC sputtering.
(f) Erzeugen von Strukturierungsgräben mittels mechanischem Ritzen.(f) Creating patterning trenches by means of mechanical scribing.
(g) Aufbringen der Kontaktfinger und Sammelkontakte über Bedruckung mit Polymerpaste mit darin enthaltenen elektrisch leitfähigen Partikeln im Siebdruckverfahren und anschließende Trocknung der gedruckten Paste.(g) applying the contact fingers and collecting contacts via printing with polymer paste containing electrically conductive particles in the screen printing process and subsequent drying of the printed paste.
(h) Vereinzeln der Solarzellen in entsprechende Abmessungen mittels Rotationsstanze.(h) separating the solar cells into corresponding dimensions by means of rotary punching.
In weiteren Beispielen sind die folgenden Varianten realisiert worden: zu (a): neben Polyimidfolie sind andere temperaturstabile Polymerfolien, Metallfolien, Glassubstrate oder Verbundwerkstoffe (z.B. glasfaserverstärkten Textilien) als Substrate verwendet worden. Die Molybdänschicht kann auch aus mehreren Metallschichten bestehen.In further examples, the following variants have been realized: on (a): in addition to polyimide film, other temperature-stable polymer films, metal foils, glass substrates or composite materials (eg glass fiber reinforced textiles) have been used as substrates. The molybdenum layer can also consist of several metal layers.
zu (b): neben Cu(In1Ga)Se2 sind als photoaktive Schicht auch die Verbindungen CuGaSe2, CuInSe2, CuGaS2, CuInS2, Cu(In1Ga)(S1Se)2 verwendet worden. Die photoaktive Schicht kann auch durch einen Druckprozess, eine galvanische Abscheidung oder dem Aufsputtern der Metalle und Cu, In, Ga und nachfolgender Selenisierung dargestellt werden. zu (c): die CdS-Schicht ist durch alternative Puffer wie z.B. ZnS, ZnSe, InS, InSe, ZnMgO etc. ersetzt worden. zu (e): ZnO:AI sind z.B. durch ZnO:Ga, ZnO:B oder ITO ersetzt worden zu (f): das Erzeugen der Strukturierungsgraben ist mit Hilfe von Lasern erfolgt zu (g): die Kontaktfinger und Sammelkontakte sind mittels Vakuumverdampfung eines Metalls und der Verwendung von Schattenmasken abgeschieden worden. zu (h): das Vereinzeln der Solarzellen ist mit Lasern oder mechanischen Stanzen wie z. B. Flachbettstanzen erfolgt.to (b): in addition to Cu (In 1 Ga) Se 2 , the compounds CuGaSe 2 , CuInSe 2 , CuGaS 2 , CuInS 2 , Cu (In 1 Ga) (S 1 Se) 2 have also been used as the photoactive layer. The photoactive layer can also be represented by a printing process, a galvanic deposition or the sputtering of the metals and Cu, In, Ga and subsequent selenization. to (c): the CdS layer has been replaced by alternative buffers such as ZnS, ZnSe, InS, InSe, ZnMgO, etc. to (e): ZnO: Al have been replaced eg by ZnO: Ga, ZnO: B or ITO to (f): the structuring trenches are generated by means of lasers to (g): the contact fingers and collecting contacts are by means of vacuum evaporation Metal and the use of shadow masks have been deposited. to (h): the separation of the solar cells with lasers or mechanical punching such. B. flat bed stamping takes place.
Beispiel 2Example 2
Das Verfahren zur Herstellung teiltransparenter Dünnschichtsolarzellen geht von funktionsfähigen Dünnschichtsolarzellen aus und behandelt diese wie folgt.The process for producing partially transparent thin-film solar cells is based on functional thin-film solar cells and treats them as follows.
Nach dem Prozessschritt g) (Aufbringen des Kontaktgrids) erfolgt das Vereinzeln der Zellen in geforderte Größen mittels einer Rotationsstanze. Gleichzeitig werden mit der selben Rotationsstanze Bereiche zwischen den Kontaktfingern ausgestanzt, um eine Teiltransparenz zu erreichen.After process step g) (application of the contact grid), the cells are separated into required sizes by means of a rotary die. At the same time areas are punched out between the contact fingers with the same rotary die to achieve partial transparency.
Die ausgestanzten Bereiche können neben den in den Abbildungen dargestellten Mustern beliebige Formen wie z.B. Rechtecke, Quadrate, Sterne, Kreuze etc. aufweisen (jeweils mit oder ohne abgerundete Ecken). Bevorzugte Formen sind Kreise. Bei Kreisen besteht das geringste Risiko des Einreißens und somit Beschädigung der flexiblen Dünnschichtsolarzelle.In addition to the patterns shown in the illustrations, the punched out areas can have any shapes such as rectangles, squares, stars, crosses, etc. (each with or without rounded corners). Preferred shapes are circles. For circles there is the least risk of tearing and thus damage to the flexible thin-film solar cell.
Beim Stanzen wird der gesamte Schichtaufbau der Solarzelle inklusive des flexiblen Substrates durchtrennt.During punching, the entire layer structure of the solar cell including the flexible substrate is severed.
Alternativ zu Rotationsstanzen können für den Trennprozess beliebige mechanische Stanzen wie z.B. Flachbettstanzen, Mikrobohrer oder Laser verwendet werden.As an alternative to rotary die cutting, any mechanical punching, such as punching, can be used for the separation process. Flat bed punches, micro drills or lasers are used.
Die im Beispiel verwendete Dünnschichtsolarzelle stammt aus der Produktion der Solarion AG Leipzig und weist vor dem Stanzen die folgenden Parameter auf: Gesamt Fläche = 3906mm2 Transparenz = 0% Leistung = 25OmWThe thin-film solar cell used in the example originates from the production of Solarion AG Leipzig and has the following parameters before punching: total area = 3906 mm 2 transparency = 0% power = 25OmW
Nunmehr wird die flexible Dünnschichtsolarzelle bearbeitet.Now, the flexible thin-film solar cell is processed.
Als Stanzwerkzeug wird eine Rotationsstanze verwendet. Nach erfolgter Behandlung weisen die Zellen die folgenden Parameter auf.The punching tool used is a rotary die cutter. After treatment, the cells have the following parameters.
Beispiel Zelle 1 Beispiel Zelle 2Example cell 1 Example cell 2
Gesamt Fläche = 3472 mm2 Gesamt Fläche = 3584 mm2 Total Area = 3472 mm 2 Total Area = 3584 mm 2
Transparenz = 11 % Transparenz = 9 %Transparency = 11% Transparency = 9%
Leistung = 220 mW Leistung = 212 mWPower = 220 mW power = 212 mW
Das Ausstanzen kann erfindungsgemäß auch vor dem Aufbringen der Kontaktfinger (Prozessschritt g) oder vor dem Erzeugen der Strukturierungsgräben (Prozessschritt f) erfolgen.According to the invention, the punching can also take place before the application of the contact fingers (process step g) or before the structuring trenches (process step f) are produced.
Beispiel 3 Die flexiblen Dünnschichtsolarzellen werden zwischen zwei transparenten starren Auflageflächen, nämlich Glasplatten, fixiert und kontaktiert.Example 3 The flexible thin-film solar cells are fixed and contacted between two transparent rigid bearing surfaces, namely glass plates.
Alternativ werden die Dünnschichtsolarzellen zwischen zwei transparenten flexiblen Auflageflächen, nämlich transparenten Kunststofffolien fixiert und kontaktiert. Alternatively, the thin-film solar cells are fixed and contacted between two transparent flexible bearing surfaces, namely transparent plastic films.

Claims

Patentansprüche claims
1. Verfahren zur Herstellung teiltransparenter Dünnschichtsolarzellen, dadurch gekennzeichnet, dass flexible Dünnschichtsolarzellen mit einem Werkzeug dergestalt bearbeitet werden, dass sie einschließlich Trägerfolie in einem Muster durchstoßen werden, wobei das Muster sowohl die mechanische Stabilität der flexiblen Dünnschichtsolarzelle als auch den Wirkungsgrad der Energiewandlung als auch die angestrebte optische Transparenz gewährleistet.1. A process for the preparation of partially transparent thin film solar cells, characterized in that flexible thin film solar cells are processed with a tool such that they are pierced, including carrier film in a pattern, the pattern both the mechanical stability of the flexible thin-film solar cell and the efficiency of energy conversion as well desired optical transparency guaranteed.
2. Verfahren nach Anspruch 1 , dadurch gekennzeichnet, dass das Verhältnis zwischen entfernter und belassener Fläche von flexiblen Dünnschichtsolarzellen zwischen 5:1 und 1 :60 beträgt.2. The method according to claim 1, characterized in that the ratio between the removed and the left surface of flexible thin-film solar cells is between 5: 1 and 1:60.
3. Verfahren nach den Ansprüchen 1 und 2, dadurch gekennzeichnet, dass das Verhältnis wie 1 :8 beträgt.3. Process according to claims 1 and 2, characterized in that the ratio is as 1: 8.
4. Verfahren nach einem oder mehreren der Ansprüchen 1 bis 3, dadurch gekennzeichnet, dass ein Muster aus regelmäßig angeordneten kreisförmigen Ausstanzungen besteht.4. The method according to one or more of claims 1 to 3, characterized in that a pattern consists of regularly arranged circular punched out.
5. Verfahren nach einem oder mehreren der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass die ausgestanzten Bereiche Rechtecke einschließlich Quadrate oder Sterne oder Kreuze darstellen.5. The method according to one or more of claims 1 to 4, characterized in that the punched out areas represent rectangles including squares or stars or crosses.
6. Verfahren nach einem oder mehreren der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass zum Einbringen der Öffnungen in die flexible Dünnschichtsolarzellen als Werkzeuge Stanzen, Mikrobohreranordnungen oder Laserstrahlanordnungen angewendet werden.6. The method according to one or more of claims 1 to 5, characterized in that are used for introducing the openings in the flexible thin-film solar cells as tools punching, micro drill assemblies or laser beam assemblies.
7. Verfahren nach einem oder mehreren der Ansprüche 1 bis 6, dadurch gekennzeichnet, dass die teiltransparenten flexiblen Dünnschichtsolarzellen zu Modulen verschaltet werden. 7. The method according to one or more of claims 1 to 6, characterized in that the partially transparent flexible thin film solar cells are connected to modules.
. Verfahren nach einem oder mehreren der Ansprüche 1 bis 7, dadurch gekennzeichnet, dass die flexiblen teiltransparenten Dünnschichtsolarzellen zwischen starren transparenten Trägern fixiert werden., Method according to one or more of claims 1 to 7, characterized in that the flexible semi-transparent thin-film solar cells are fixed between rigid transparent carriers.
9. Verfahren nach einem oder mehreren der Ansprüche 1 bis 7, dadurch gekennzeichnet, dass die flexiblen teiltransparenten Dünnschichtsolarzellen zwischen flexiblen transparenten Trägern fixiert werden.9. The method according to one or more of claims 1 to 7, characterized in that the flexible partially transparent thin-film solar cells are fixed between flexible transparent carriers.
10. Teiltransparente flexible Dünnschichtsolarzelle, dadurch gekennzeichnet, dass die Trägerfolie einschließlich der energiewandelnden Schichten Öffnungen tragen, welche das Durchtreten von Licht ermöglichen und die Teiltransparenz sicherstellen. 10. Semi-transparent flexible thin-film solar cell, characterized in that the carrier foil including the energy-converting layers carry openings which allow the passage of light and ensure the partial transparency.
EP10734025A 2009-05-23 2010-05-24 Partially transparent flexible thin film solar cells and method for the production thereof Withdrawn EP2433302A2 (en)

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DE102009022378A DE102009022378B4 (en) 2009-05-23 2009-05-23 Process for the preparation of semi-transparent flexible thin-film solar cells and semi-transparent flexible thin-film solar cell
PCT/EP2010/003159 WO2010136166A2 (en) 2009-05-23 2010-05-24 Partially transparent flexible thin film solar cells and method for the production thereof

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8834664B2 (en) 2010-10-22 2014-09-16 Guardian Industries Corp. Photovoltaic modules for use in vehicle roofs, and/or methods of making the same
DE112013002119T5 (en) * 2012-04-18 2014-12-31 Guardian Industries Corp. Improved photovoltaic modules for use in vehicle roofs and / or methods of making same
FR2997227B1 (en) * 2012-10-23 2015-12-11 Crosslux THIN-FILM PHOTOVOLTAIC DEVICE, IN PARTICULAR FOR SOLAR GLAZING
FR2997226B1 (en) * 2012-10-23 2016-01-01 Crosslux METHOD FOR MANUFACTURING A THIN-FILM PHOTOVOLTAIC DEVICE, IN PARTICULAR FOR SOLAR GLAZING
US9812592B2 (en) 2012-12-21 2017-11-07 Sunpower Corporation Metal-foil-assisted fabrication of thin-silicon solar cell
CN104425637A (en) * 2013-08-30 2015-03-18 中国建材国际工程集团有限公司 Partially transparent thin solar module

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6316283B1 (en) * 1998-03-25 2001-11-13 Asulab Sa Batch manufacturing method for photovoltaic cells

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4704369A (en) * 1985-04-01 1987-11-03 Energy Conversion Devices, Inc. Method of severing a semiconductor device
US4795500A (en) * 1985-07-02 1989-01-03 Sanyo Electric Co., Ltd. Photovoltaic device
DE4201571C2 (en) * 1991-01-25 1993-10-14 Phototronics Solartechnik Gmbh Method for producing a solar cell that is partially transparent to light and a corresponding solar module
FR2673328A1 (en) * 1991-02-21 1992-08-28 Solems Sa Solar module and device with inverted structure capable of having partial transparency
US5176758A (en) * 1991-05-20 1993-01-05 United Solar Systems Corporation Translucent photovoltaic sheet material and panels
JP3055104B2 (en) * 1998-08-31 2000-06-26 亜南半導体株式会社 Manufacturing method of semiconductor package
EP1320892A2 (en) * 2000-07-06 2003-06-25 BP Corporation North America Inc. Partially transparent photovoltaic modules
JP2002299672A (en) * 2001-01-26 2002-10-11 Ebara Corp Solar battery and its manufacturing method
DE102004057663B4 (en) * 2004-09-15 2015-08-20 Sunways Ag Solar module with regularly arranged holes semitransparent crystalline solar cells and method of preparation
JP4681352B2 (en) * 2005-05-24 2011-05-11 本田技研工業株式会社 Chalcopyrite solar cell
US20090114262A1 (en) * 2006-08-18 2009-05-07 Adriani Paul M Methods and Devices for Large-Scale Solar Installations
DE102007036715B4 (en) * 2007-08-05 2011-02-24 Solarion Ag Method and device for producing flexible thin-film solar cells

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6316283B1 (en) * 1998-03-25 2001-11-13 Asulab Sa Batch manufacturing method for photovoltaic cells

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2010136166A2 *

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US20120125411A1 (en) 2012-05-24
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DE102009022378B4 (en) 2013-02-07
WO2010136166A3 (en) 2011-10-20

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