EP2411998A1 - Procédé et dispositif de génération de données d'images tridimensionnelles - Google Patents

Procédé et dispositif de génération de données d'images tridimensionnelles

Info

Publication number
EP2411998A1
EP2411998A1 EP10710833A EP10710833A EP2411998A1 EP 2411998 A1 EP2411998 A1 EP 2411998A1 EP 10710833 A EP10710833 A EP 10710833A EP 10710833 A EP10710833 A EP 10710833A EP 2411998 A1 EP2411998 A1 EP 2411998A1
Authority
EP
European Patent Office
Prior art keywords
sample
particle beam
image data
longitudinal axis
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP10710833A
Other languages
German (de)
English (en)
Inventor
Andreas Schertel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss NTS GmbH
Original Assignee
Carl Zeiss NTS GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss NTS GmbH filed Critical Carl Zeiss NTS GmbH
Publication of EP2411998A1 publication Critical patent/EP2411998A1/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/226—Image reconstruction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Definitions

  • the invention relates to a method and a device for generating three-dimensional image data of a sample.
  • Generating three-dimensional image data of a sample of interest is very desirable in many fields, especially in the life sciences. Based on the three-dimensional image data, which allow a three-dimensional representation of a sample, numerous analyzes of the sample can be carried out.
  • a method for generating three-dimensional image data of a sample is already known from the prior art.
  • a layer of the sample is removed by means of a first particle beam in the form of an ion beam in such a way that a surface of the sample is exposed.
  • the exposed surface is then fed a second particle beam in the form of an electron beam.
  • interaction particles for example secondary electrons or backscattered electrons
  • Detection signals generated during detection are used for imaging. In this way one obtains image data regarding the exposed surface which are stored.
  • both a first particle beam (ion beam) and a second particle beam (electron beam) are also used.
  • the first particle beam is guided substantially perpendicular to a marking surface of the sample to be examined.
  • On the marking surface are applied two longitudinal markings which are V-shaped to a longitudinal axis of the sample and intersect at a point on the marking surface of the sample.
  • a layer of the sample is removed by scanning the first particle beam perpendicular to the longitudinal axis of the sample.
  • a surface is exposed, which is oriented perpendicular to the longitudinal axis of the sample.
  • the second particle beam impinges on the exposed surface. The resulting interaction particles are detected.
  • the detection signals resulting from the detection are used for imaging, and the image data obtained in this way are stored.
  • the abovementioned method steps are repeated in order to expose further surfaces of the sample to be examined and to obtain image data of the further surfaces.
  • the stored image data of the various exposed surfaces are combined to form a three-dimensional image data set of the sample.
  • the invention is therefore based on the object of specifying a method and a device for generating three-dimensional image data of a sample with which a sample which has a relatively large volume can be examined sufficiently well.
  • the invention relates to a sample with the features of claim 19 and a particle beam device for carrying out the method according to the invention with the features of claim 23. Further features of the invention will become apparent from the following description, the appended claims and / or the accompanying drawings.
  • the inventive method for generating three-dimensional image data has several steps. It is thus provided to move a sample (that is to say an object to be examined) arranged on a movably designed sample carrier in the direction of a longitudinal axis of the sample by means of the sample carrier. For example, it is intended to move the sample continuously.
  • the longitudinal axis preferably lies in a first plane, which is arranged perpendicular or substantially perpendicular to a second plane, in which a first particle beam is supplied to the sample.
  • the sample carrier is designed for example as a sample table, wherein the movable design of the sample table is ensured by a plurality of movement elements, of which the sample table is composed.
  • the movement elements allow movement of the sample table in at least one particular direction.
  • sample tables are provided which have a plurality of translatory movement elements (for example about three to four translational movement elements) as well as a plurality of rotational movement elements (for example two to three rotational movement elements).
  • the sample carrier can be moved along three mutually perpendicular axes.
  • the sample carrier is designed to be rotatable about a first axis of rotation and about a second axis of rotation perpendicular to the first axis of rotation.
  • a first particle beam is guided to the sample in the method according to the invention.
  • a first layer is removed from the sample such that a first surface of the sample is exposed.
  • the first surface is again supplied with a second particle beam which is focused on the first surface of the sample.
  • interaction particles for example secondary electrons or backscattered electrons
  • interaction reactions for example X-rays
  • a second layer of the sample is removed by means of the first particle beam, wherein the second layer has the first surface. Removal of the second layer exposes a second surface of the sample. Following this, the second particle beam is guided onto the second surface of the sample.
  • second image data of the sample are acquired, the second image data representing properties of the second surface.
  • the second image data is stored. Subsequently, for example, in an analysis unit, three-dimensional image data of the sample are calculated by means of the stored first image data and the stored second image data.
  • the movable sample carrier sample to move by means of the sample carrier in the direction of the longitudinal axis of the sample to a first predetermined position of the sample.
  • the first predefinable position is selected by a coordinate KX1 in an x-direction, a coordinate KY1 in a y-direction and by a coordinate KZ1 in a z-direction in a given coordinate system.
  • the coordinate system has three mutually perpendicular axes (namely, an x-axis, a y-axis and a z-axis).
  • the first predeterminable position is chosen so that the first particle beam can be guided to the sample.
  • the first particle beam is guided to the sample.
  • the first layer is removed from the sample such that the first surface of the sample is exposed.
  • the first surface is again fed with the second particle beam, which is focused onto the first surface of the sample.
  • the second particle beam is supplied to the first surface of the sample, the above-mentioned interaction particles and / or interaction reactions are formed. These are detected and used to acquire the first image data of the sample representing the characteristics of the first surface.
  • the first image data is saved.
  • the sample is moved in the direction of the longitudinal axis of the sample by means of the sample carrier into a second predeterminable position of the sample.
  • the second predefinable position is selected by a coordinate KX2 in the x-direction, a coordinate KY2 in the y-direction and by a coordinate KZ2 in the z-direction in the aforementioned coordinate system.
  • the second layer of the sample is removed by means of the first particle beam, the second layer having the first surface. By removing the second layer, the second surface of the sample is exposed. Following this, the second particle beam is guided onto the second surface of the sample.
  • the second image data of the sample is acquired, the second image data representing properties of the second surface.
  • the second image data is stored.
  • the three-dimensional image data of the sample is calculated by means of the stored first image data and the stored second image data.
  • a further embodiment of the method according to the invention basically corresponds to the above-described embodiment, wherein in the following embodiment of the method, the order of some method steps is different.
  • the sample carrier corresponds, for example, to the sample carrier already explained above.
  • the first layer of the sample is removed by means of the first particle beam, so that the first surface of the sample is exposed.
  • the sample is moved by means of the sample carrier in the direction of the longitudinal axis of the sample to a first predeterminable position of the sample.
  • the second particle beam is focused on the first surface of the sample.
  • the detection of the first image data of the sample takes place by detection of the interaction particles and / or interaction reactions.
  • the first image data is saved.
  • the second layer of the sample is removed by means of the first particle beam, wherein the second layer has the first surface and whereby the second surface of the sample is exposed.
  • the sample is then moved in the direction of the longitudinal axis of the sample by means of the sample carrier in the second predetermined position of the sample.
  • the second predefinable position reference is made to above. This is followed by feeding the second particle beam onto the second surface of the sample.
  • Detecting the second image data of the sample indicative of characteristics of the second surface by detection of the interaction particles and interaction reactions resulting from supplying the second particle beam to the second surface of the sample is performed.
  • the second image data is stored. Both the first image data and the second image data are then used to calculate three-dimensional image data of the sample.
  • the method it is provided to store the first predefinable position and / or the second predefinable position, for example when the first image data or the second image data is stored.
  • a layer thickness of the first layer to be removed and / or the second layer to be removed is predetermined.
  • the first predefinable position and the second predeterminable position are identical.
  • this is a position of the sample in which the first particle beam strikes an edge (ie an outer boundary) of the sample, the edge being arranged perpendicularly or substantially perpendicular to the longitudinal axis of the sample.
  • the border is, for example, an edge of a cube-shaped sample.
  • the method of the invention is based on the idea of adjusting the position of the sample relative to the first particle beam and the second particle beam by moving the sample along its longitudinal axis such that both a good removal of layers of the sample and a good production of an image an exposed surface are possible. Since a movable sample carrier can move the sample in the direction of the longitudinal axis of the sample over long distances, it is possible to analyze a sample with a large volume. For example, this sample may be cube-shaped with an edge length of 200 ⁇ m or larger.
  • the layers to be removed have identical layer thicknesses, as already briefly explained above.
  • the surfaces to be examined are repeatedly moved by means of a movement of the sample carrier into a very specific position, as likewise briefly explained above.
  • the invention allows an exposed surface to be at the same position relative to the first particle beam and the second particle beam. It is therefore sufficient initially to focus the first particle beam and / or the second particle beam once onto a surface of the sample which is located in the specific position relative to the first particle beam and / or the second particle beam. Since all other exposed surfaces are always arranged at this position, a refocusing of the first particle beam and / or the second particle beam is therefore no longer necessary.
  • the method makes it possible for the first particle beam and / or the second particle beam to always be used in the same plane.
  • a change or correction of parameters (for example with regard to the focusing of the first particle beam and the second particle beam or with respect to a correction of the astigmatism) is not necessary.
  • the invention makes it possible to use stationary particle beams, that is to say particle beams, which can always be used in one and the same plane.
  • stationary particle beams that is to say particle beams, which can always be used in one and the same plane.
  • Even possible aberrations are stationary is a correction or change of Parameters not necessary. This leads to shorter measurement times compared to the prior art.
  • the first particle beam is supplied to the sample in a plane which is arranged perpendicular to the longitudinal axis of the sample. Furthermore, it is provided that the first particle beam is scanned over the sample. In other words, the first particle beam is supplied to the sample in parallel with the surface on which the second particle beam impinges and whose image data are detected.
  • a particle-optical axis of a particle beam device which makes available the second particle beam encloses an angle with the first surface or the second surface. Accordingly, in this embodiment, the second particle beam is incident obliquely on the first surface and / or the second surface. In another embodiment, the second particle beam is scanned over the first surface and / or the second surface.
  • the method according to the invention it is provided to acquire at least one first image data group and at least one second image data group when acquiring the first image data.
  • the first image data group is assigned to a first region of the first surface.
  • the second image data group is associated with a second region of the first surface.
  • An association of the first image data group with the first region of the first surface is understood to mean that the first image data group contains image data of the first region. The same applies to the second image data group.
  • After detecting the first image data group and the second image data group it is possible to use the first image data group and the second image data group to form the first image data mosaic-like.
  • identical is provided alternatively or additionally for the second surface.
  • this embodiment provides that when capturing the second image data at least a third image data group and at least a fourth image data group are detected, wherein the third image data group is associated with a third region of the second surface and wherein the fourth image data group is associated with a fourth region of the second surface.
  • association refers to the definition of "association.”
  • the third image data group and the fourth image data group are composed in a mosaic to form the second image data.
  • the acquisition of image data groups has the following background.
  • the image data of the individual surfaces which are composed of picture elements (pixels) are rasterized step by step (ie pixel by pixel) and stored.
  • the number of pixels is limited. Since the resolution of raster units used for rasterization is limited (not infinitely small steps can be taken, but the steps are always of a finite size), therefore, the resolution with which the image data is detected and stored is limited. Thus, the number of pixels that may be included in the image data is limited.
  • a surface to be examined which extends along an x-axis and a y-axis (the x-axis and y-axis are arranged perpendicular to each other) over 200 ⁇ m each, has more than 40,000 Pixels both along the x-axis and along the y-axis.
  • the resolving power of raster units currently known to the Applicant is only about 4000 to 8000 pixels in each direction.
  • the second particle beam is guided to a first beam position on a first surface area and / or a second beam position on a second surface area.
  • the first surface area and the second surface area are formed on a single surface, for example. They thus form part of this single surface.
  • it is provided to read at least one correction value from a correction map as a function of the first beam position and / or the second beam position in order to correct the focusing of the second particle beam on the first surface area and / or the second surface area.
  • This is advantageous, in particular, in the mosaic-like composition, since the focusing of the second particle beam can certainly vary somewhat during screening over a somewhat larger surface area.
  • the second particle beam is also automatically corrected with respect to the first beam position on the first surface area and / or the second beam position on the second surface area with respect to astigmatism and further correctable parameters.
  • At least one line-like first marker is provided which does not run parallel to the longitudinal axis of the sample (ie at an angle deviating from 0 ° and 180 °) with which the first predeterminable position of the sample and / or the second predeterminable one Position of the sample can be determined.
  • a first mark several punctiform or punch-shaped individual markings provided, which are arranged in the form of a line. It is expressly understood, however, that the invention is not limited to punctiform or punched individual markings. Rather, any shape of the individual markings are suitable, which are suitable for a line-like arrangement.
  • At least one second marking is provided, which runs parallel to the longitudinal axis of the sample and which is also used to determine the first predeterminable position of the sample and / or the second predeterminable position of the sample.
  • the second marking has at least one line which runs parallel to the longitudinal axis and which is arranged on an edge of the sample to be examined or at least runs in the direction of this edge.
  • the first marking and / or the second marking with the first particle beam and / or the second particle beam is / are introduced into the sample.
  • recesses are introduced into a marking surface of the sample with an ion beam, which are line-like.
  • it is provided to produce the first marking and / or second marking by means of particle beam deposition.
  • the marking surface into which the recesses are introduced is arranged perpendicular to the first surface and the second surface, to which the second particle beam is guided.
  • An embodiment of the method according to the invention provides a special form of determining the position of the first predefinable position and / or the second predeterminable position of the sample.
  • the first particle beam in the plane, which is arranged perpendicular to the longitudinal axis of the sample, provided.
  • interaction particles are detected which arise due to the interaction of the first particle beam with matter.
  • the sample is moved until a predefinable threshold value is exceeded during the detection of interaction particles. In this case, it is ensured that the edge of the sample is located exactly at the position where the first particle beam is located.
  • an ion beam is fed as the first particle beam.
  • an electron beam is supplied as the second particle beam.
  • the invention also relates to a computer program product comprising executable program code which, when executed in a computer processor, performs the steps of a method having at least one of the above features or a combination of the above features.
  • the invention also relates to a sample which can be analyzed by means of a particle blasting device (ie an object to be examined).
  • the sample has a longitudinal axis, reference being made to the above with regard to the definition of the longitudinal axis.
  • the sample is provided with at least one first marking which does not run parallel to the longitudinal axis of the sample (ie at an angle other than 0 ° and 180 °).
  • the first mark is arranged at an angle of 78 ° to 87 ° or from 80 ° to 85 ° to the longitudinal axis.
  • the longitudinal axis is perpendicular to the plane in which For example, if the first particle beam described above hits the sample (ie the cutting plane in which layers are removed and surfaces are exposed), then this arrangement can also be expressed such that the first marker is at an angle of 3 ° to 12 ° or 5 ° ° to 10 ° to this cutting plane is arranged.
  • the first marking itself has a plurality of punctiform or punctiform individual markings which are linear. In particular, it is provided to arrange a grid on a surface of the sample, which consists of a plurality of line-like arranged individual markings.
  • the sample according to the invention also has at least one second marking which runs parallel to the longitudinal axis of the sample.
  • This includes, for example, line structures, which are arranged such that they define a 10-fold or 100-fold distance of a first mark from an original cutting plane.
  • the above individual markings have, for example, diameters of 10 nm to 100 nm. In a further embodiment, for example, diameters of 15 nm to 60 nm are provided. In a further embodiment, a diameter of about 25nm is provided. Considerations have shown that the diameter can be greater than the desired resolution along the longitudinal axis of the sample (depth resolution). For example, the diameter at a depth resolution of 5 nm is the aforementioned 25 nm.
  • the first mark and / or the second mark is / are provided with a contrast agent, for example platinum.
  • a contrast agent for example platinum.
  • the invention is not limited to the aforementioned embodiments of the above-explained markings. Rather, any marking is suitable which allows a position determination of a sample and the measurement of a removed layer of a sample.
  • the invention also relates to a particle beam apparatus for carrying out a method having at least one of the above-mentioned features or a combination of the features mentioned above.
  • the particle beam device according to the invention is provided with at least one sample carrier for receiving a sample, wherein the sample carrier is designed to be movable.
  • the sample carrier may have one of the features already mentioned above.
  • the particle beam apparatus has at least one first means for generating a first particle beam and at least one second means for generating a second particle beam.
  • the first one is Means an ion beam column, whereas the second means is designed as an electron beam column.
  • at least one first objective lens for focusing the first particle beam onto the sample and at least one second objective lens for focusing the second particle beam onto the sample are provided.
  • the particle beam device has at least one control unit with a processor in which a computer program product is loaded, which is already mentioned above.
  • the particle beam device according to the invention can be provided with a sample which has at least one of the abovementioned features or a combination of the abovementioned features.
  • Fig. 1A is a schematic representation of a particle beam device with two particle beam columns
  • Fig. 1 B is a schematic representation of the arrangement of a sample carrier
  • Fig. 2 is a schematic representation of a sequence of a first
  • FIG. 2 3 schematic representations of individual method steps of the method according to FIG. 2;
  • FIG. 5A-C are schematic representations of the sample of Figure 4 with markings; 6 is a schematic representation of a sequence of a further embodiment of a method according to the invention.
  • FIG. 7 shows schematic representations of individual method steps of the method according to FIG. 6;
  • FIG. 8 shows a schematic illustration of a sequence of a further exemplary embodiment of the method according to FIG. 2; such as
  • FIG. 9 is a schematic representation of a sequence of a further embodiment of the method according to FIG. 6.
  • FIG. 1A shows a schematic representation of a particle beam device which has an ion beam device 1 and an electron beam device 24. With the illustrated particle beam device, the methods are carried out, which are explained in more detail below.
  • the ion beam device 1 has an ion beam column 2, in which numerous units of the ion beam device 1 are arranged.
  • an ion source 3 is arranged in the ion beam column 2.
  • ions are generated, which form a first particle beam in the ion beam column 2 in the form of an ion beam.
  • ions from a single element e.g., gallium (Ga)
  • the ions can also be formed as ionized atoms or as ionized moieties.
  • the ions are accelerated by means of an ion beam electrode 4 to a predeterminable potential and then passed through a condenser lens 5.
  • the ion beam formed from the ions is guided through a diaphragm 7 and then reaches a first electrode arrangement 8 and a second electrode arrangement 9, which are formed as raster electrodes.
  • a first electrode arrangement 8 and the second electrode arrangement 9 the ion beam consisting of the ions is scanned over a sample 11.
  • the ion beam is focused on the sample 11 by means of a first objective lens 10.
  • the sample 11 is arranged on a sample carrier 12, which ensures that the sample 11 is movable along an x-axis.
  • the x-axis extends along a longitudinal axis 13 of the sample 11, as shown in Figure 1A.
  • the longitudinal axis 13 of the sample 11 is preferably located in a first plane, which is arranged perpendicular or substantially perpendicular to a second plane, in which the first particle beam of the sample 11 is supplied.
  • the sample carrier 12 is shown in more detail in FIG. 1B.
  • the sample carrier 12 is designed as a movable sample table. It has a sample receptacle 12A, on which the sample 11 is arranged. Trained as a sample table sample carrier 12 has moving elements, which ensure a movement of the sample carrier 12.
  • the movement elements are shown schematically in FIG. 1B.
  • the sample carrier 12 has a first movement element 38 on a housing 39 of a sample chamber, in which the sample carrier 12 is arranged and which is connected to the ion beam column 2 (not shown). With the first movement element 38, a movement of the sample carrier 12 along a z-axis is made possible.
  • a second moving member 40 is provided, which is designed as a guide for a carriage and ensures that the Sample carrier 12 is movable in an x-direction.
  • a third movement element 41 is provided. The third movement member 41 is formed such that the sample support 12 is movable in a y direction.
  • the sample carrier 12 in turn is formed with a fourth movement element 42, which makes it possible for the sample carrier 12 to be rotatable about a first rotation axis R1. Furthermore, a fifth movement element 43 is provided, which enables a rotation of the sample carrier 12 about a second rotation axis R2.
  • the second rotation axis R2 is also referred to as "tilt axis", by which a tilting of the sample 11 arranged in the sample holder 12 is made possible by an angle v.
  • the sample carrier 12 is tilted in the embodiment shown in Figure 1A by the angle v by a rotation about the second axis of rotation R2.
  • the sample 11 is movable by displacement along the x-direction in the direction of the longitudinal axis 13.
  • the sample carrier 12 is additionally provided, for example, with a piezo drive for further movement in the x-direction. Due to this design, the sample carrier 12 can be moved relatively accurately, so that the sample 11 can assume a predefinable position relatively well.
  • the electron beam device 24 is designed as a scanning electron microscope. It has an electron column 16, in which the units of the electron beam device 24 are arranged. Thus, an electron source 17 is provided which generates electrons which are extracted by means of a first electrode 18. By means of a second electrode 19, the electrons are accelerated to a predeterminable potential. The electrons are then passed through a second condenser lens 20, whereby a second particle beam is shaped in the form of an electron beam. This is done by means of a second objective lens
  • Scanning electrodes (not shown) arranged on the second objective lens 21 ensure that the electron beam can be scanned over the sample 11.
  • interaction particles are formed, in particular secondary electron and backscattered electrons. These are detected by means of a first detector 22 and by means of a second detector 23 and used for imaging. It is thus possible to produce an image of the surface 14 of the sample 11.
  • the first detector 22 and the second detector 23 are connected to an evaluation and storage unit 15 in which image data of the surface 14 are analyzed and stored.
  • the evaluation and storage unit 15 is provided with a processor in which a program code of a computer program product is loaded which carries out the methods according to the invention.
  • a third detector 23A can also be provided (see FIG. 1A) which detects further interaction reactions, for example X-ray quanta, which can likewise be used to generate image data.
  • FIG. 1 shows a schematic representation of a first embodiment of a method according to the invention, which can be carried out with the particle beam device shown in Figure 1A. Individual process steps of this process are shown schematically in FIG.
  • a sample 11 is analyzed, which is formed substantially rectangular.
  • the sample 11 has a first extent in a first direction along an A-axis of substantially 200 ⁇ m and a second extent in a second direction along a B-axis of substantially 200 ⁇ m.
  • a third expansion of the sample 11 in a third direction along a C axis is significantly greater than 200 ⁇ m (see FIG.
  • the C-axis is arranged parallel to the longitudinal axis 13 of the sample 11 (see Figure 1).
  • the A-axis, the B-axis and the C-axis are perpendicular to each other (see Figure 4).
  • the first particle beam is generated in the form of the ion beam.
  • the first particle beam is provided by means of the ion beam device 1.
  • the first particle beam is guided in the direction of arrow E in a plane which is arranged perpendicular to the longitudinal axis 13 of the sample 11 (see also FIG.
  • the sample 11 is then moved in a direction along the x-axis (ie parallel or along the longitudinal axis 13 of the sample 11) in the direction of the first particle beam (see Figure 1A), until a first surface 01, which is a boundary surface represents the sample 11, lies substantially in the plane of the first particle beam (see Figure 3a).
  • FIG. 5A shows a schematic representation of the sample 11 with markings. Shown is a view of the sample 11 from the direction from which the first particle beam in the form of the ion beam is guided onto the sample 11. The first particle beam thus extends into the leaf level.
  • the second particle beam in the form of the electron beam is guided in the direction of arrow D onto the surface to be analyzed, which is provided here with the reference symbol 01 (first surface 01), of the sample 11. Due to the rectangular shape, the sample 11 has edges which limit the spatial extent of the sample 11. Three of the edges of the sample 11 are shown in FIG. 5A, namely the already mentioned first edge 32, a second edge 33 and a third edge 34.
  • the first edge 32 of the sample 11 is adjacent to each on the surface of the sample 11 (in Figure 5A, the first surface 01), which is exposed by means of the first particle beam and then analyzed by means of the second particle beam.
  • a plurality of line markings 26 are applied in a grid shape.
  • TheTECHnmarkie- ments 26 are arranged parallel to each other and each have a plurality of individual marks 29 in the form of circular recesses. In the illustrated embodiment are a total of ten individual marks 29 are provided in each of the line marks 26.
  • the diameter of each of the individual marks 29 may be greater than the desired resolution along the longitudinal axis 13 of the sample 11 (depth resolution). For example, the diameter of each of the individual marks 29 at a depth resolution of 5 nm is substantially 25 nm. This will be explained in detail below.
  • the individual line markings 26 are arranged at an angle to the longitudinal axis 13, which is not 90 °. They thus do not run perpendicular to the longitudinal axis 13 of the sample 11 and are therefore also arranged at a certain angle to the first edge 32.
  • FIG. 5B clarifies this. Shown is one of the line markings 26, which is directly adjacent to the first edge 32.
  • Mutually adjacent individual markings 29 are arranged at a distance ⁇ d from one another. In this case, the distance ⁇ d is selected such that the distance ⁇ d is greater than or equal to the diameter 0 E of each of the individual markings 29. It therefore applies ⁇ d> 0 E.
  • the line marker 26 has the following length:
  • the distance K of the single mark 29A from the first edge 32 is calculated as follows:
  • ⁇ x is the desired depth resolution.
  • ⁇ x is the desired depth resolution.
  • OE a predetermined diameter OE
  • ⁇ d 0 E
  • the abovementioned starting position can be determined and determined, from which the method according to the invention is further carried out.
  • FIG. 5C shows a further exemplary embodiment of the sample 11, which basically corresponds to the sample 11 according to FIG. 5A, but which is additionally provided with further markings.
  • the sample 11 according to FIG. 5C is provided with the numerous line markings 26.
  • Each of the line marks 26 has 10 individual marks 29 each.
  • the line markings 26 are bounded by the first edge 32, the second edge 33 and the third edge 34.
  • a first panel 27 and a second panel 28 are provided on the marking surface 25 of the sample 11.
  • a first line structure 30 is provided, whose individual lines (for example a first line 30A and a second line 30B) have different lengths and are arranged parallel to one another.
  • Each individual line of the first line structure 30 is associated with a particular line marker 26.
  • the second field 28 is provided with a line structure, namely the second line structure 31.
  • This also has individual lines, which are arranged parallel to each other and may have different lengths.
  • the individual marks 29 define a 1-fold distance of an exposed surface from the home position.
  • the first line structure 30 of the first panel 27, on the other hand, defines a 10-fold distance of an exposed surface from the starting position.
  • the second line structure 31 of the second panel 28 defines 100 times the distance of an exposed surface from the home position. This will be explained in more detail below.
  • All of the line markings 26, the individual markings 29 as well as the first line structure 30 and the second line structure 31 can be introduced into the sample 11 by means of the first particle beam or the second particle beam.
  • the first individual markings 29 are provided with a contrast agent (for example platinum).
  • the determination of the starting position in the direction of the x-axis is carried out after generating an image of the first surface 01 by means of the second particle beam according to the method steps S3 to S5 of the method according to Figure 2.
  • the second particle beam is generated in the form of the electron beam by means of the electron beam device 24 and focused on the first surface 01 of the sample 11, in the direction of arrow F (see Figure 3a).
  • the second particle beam is then scanned over the first surface 01 of the sample 11.
  • the interaction particles in particular secondary electrons and backscattered electrons
  • X-ray quanta are also detected by means of the third detector 23A.
  • the detector signals provided by the first detector 22 and the second detector 23 (optionally the third detector 23A) are used for imaging and thus for producing an image of the first surface O1.
  • Image data associated with the first surface 01 are generated and stored in the evaluation and storage unit 15.
  • the image generated by the first surface 01 shows at least one of the individual markings 29, optionally also one of the lines of the first line structure 30 and / or the second line structure 31.
  • the individual markings 29 possibly also the lines of the first line structure 30 and / or the second line structure
  • Line structure 31 on the first surface 01 indicate the starting position. This is saved.
  • a first layer L1 containing the first surface 01 is now removed from the sample 11 by means of the first particle beam.
  • the thickness of the layer L1 is 15 nm in this embodiment.
  • a second surface O2 is exposed, on which the second particle beam is then focused (see FIG. 3b).
  • the second particle beam is fed in the direction of arrow F to the second surface 02 (method step S7).
  • the interaction particles (in particular secondary electrons and backscattered electrons) and / or interaction reactions (for example resulting x-ray quanta) arising upon impact of the second particle beam are detected by the first detector 22, by the second detector 23 and by the third detector 23A and to generate an image of the second surface 02 used (step S8).
  • image data relating to the second surface 02 are generated, which are stored in the evaluation and storage unit 15 (method).
  • Step S9 the position of the second surface 02 is determined and stored, as explained below.
  • method step S10 the sample 11 is moved in the direction of the second particle beam (see FIG. 3c) until the first edge 32, which now adjoins the second surface 02, lies in the plane of the second particle beam (see the above explanations).
  • a query is made as to whether an image of another surface is to be generated (method step S11). If an image of another surface is to be generated, the method steps S6 to S11 are repeated correspondingly, in which, for example, a second layer L2, a third layer L3 and a fourth layer L4 are subsequently removed, around a third surface 03, a fourth surface O4 and a fifth surface 05 to expose and to produce each of them by means of the second particle beam an image of these.
  • method step S12 the stored image data are combined to form a three-dimensional image data set of sample 11 taking into account the stored positions.
  • the three-dimensional image data set is then displayed in the form of an image on a display unit, for example a monitor.
  • the aforesaid method allows exposed surfaces (except for the first surface 01) to be in the same position relative to the first particle beam and the second particle beam. It is therefore sufficient initially to focus the first particle beam and / or the second particle beam once on an actually exposed surface (for example the second surface 02) of the sample 11. Since all other exposed surfaces are always arranged at the same position, refocusing of the first particle beam and / or the second particle beam is no longer necessary. Also, possible distortions and other aberrations (eg, astigmatism) on the other exposed surfaces at the same position are constant and therefore need not be corrected.
  • FIG. 6 shows a schematic representation of a further exemplary embodiment of a method according to the invention, which can be carried out with the particle beam device shown in FIG. Separate Process steps of this process are shown schematically in FIG.
  • FIG. 6 The exemplary embodiment illustrated in FIG. 6 is basically based on the exemplary embodiment explained above.
  • the method steps S1 to S6 of the method according to FIG. 6 correspond to method steps S1 to S6 of the method according to FIG. 2, so that reference is made to the explanations made above with regard to these method steps.
  • FIGS. 7a and 7b therefore correspond to FIGS. 3a and 3b.
  • the further method steps S7 to S12 of the method according to FIG. 6 basically correspond to method steps S7 to S12 of the method according to FIG. 2, but with the difference that method step S10 takes place between method step S6 and method step S7.
  • the movement of the sample 11 to the first particle beam always takes place after removal of a layer.
  • the second particle beam is now focused on the exposed surface, so that imaging can take place by detection of interaction particles (see also Figure 7c).
  • the generated image data and the position of the exposed surface are stored in the evaluation and storage unit 15. The determination of the position takes place as already explained above.
  • method steps S6 to S11 are repeated. This is shown schematically in FIGS. 7d and 7e.
  • FIG. 7d shows the sample 11, in which the second layer L2 has been removed, so that a third surface 03 has been exposed. The sample 11 is then moved until the first edge 32 abuts the first particle beam passes. In this position, an image of the third surface 03 is generated.
  • an exposed surface is at the same position relative to the first particle beam and the second particle beam. It is thus sufficient initially to focus the first particle beam and / or the second particle beam once onto a surface of the sample. Since all other exposed surfaces are always arranged at the same position, refocusing of the first particle beam and / or the second particle beam is no longer necessary. Also, possible distortions and other aberrations (eg, astigmatism) on the other exposed surfaces at the same position are constant and therefore need not be corrected.
  • a method step S13 takes place in which a region on the first surface O1 is selected. This is, for example, a first region 36, which is shown schematically in FIG.
  • the second particle beam is then focused on the first region 36.
  • the interaction particles and / or interaction reactions which are formed on the first region 36 when the second particle beam strikes are detected and used for imaging (method step S15).
  • Data of a first image data group are generated and stored in the evaluation and storage unit 15, which now reproduce an image of the first region 36 (method step S16). Furthermore, the exact position of the selected area is stored in the evaluation and storage unit 15.
  • a further method step S17 it is determined whether the method steps S13 to S16 are carried out for a further area on the first surface O1 of the sample 11 to be, for example, a second area 37 (see Figure 4). If so, then the process steps S13 to S16 for the second area 37 are repeated. In this case, a second image data group is generated, which serves to generate an image of the second region 37. The second image data group is likewise stored in the evaluation and storage unit 15. The position of the second area 37 is stored (see above).
  • the image data groups (in the present example the first image data group and the second image data group) stored in the evaluation and storage unit 15 are mosaically assembled to form image data of the first surface O1 such that the composite image data reproduce complete image of the first surface 01 (method step S18). Following this, the method step S6 and all further method steps are then carried out.
  • the exemplary embodiment illustrated in FIG. 8 is also suitable for the mosaic-like composition of each in the method according to FIG.
  • FIG. 6 A modification of the method according to FIG. 6 is shown in FIG. In principle, this modification corresponds to the modification according to FIG. 8, the method steps S13 to S18 being carried out between the method step S2 and the method step S6 or the method step S10 and the method step S11.
  • the detection of image data groups according to the aforementioned embodiments is carried out for the reasons described above.
  • the sample carrier 12 for a mosaic-like image recording in the plane of the surface 14 (see FIG. 1A). This can be achieved, for example, by moving the sample 11 in the y-direction and / or z-direction (see Figure 1 A). It is provided that image data groups are acquired at different locations. In this way, for example, the first image data group and the second image data group are determined. The individual images of the various image data groups are then combined to form an entire image.
  • step S14 at least one correction value is additionally read from a correction map as a function of the position of the second particle beam in order to possibly correct the focusing of the second particle beam on the surface to be imaged.
  • a correction map as a function of the position of the second particle beam in order to possibly correct the focusing of the second particle beam on the surface to be imaged.
  • the sample carrier 12 may additionally be provided with a piezo drive for further movement in the x direction.
  • the invention is not limited to a piezo drive. Rather, any fine drive can be used.
  • This piezo drive is used for accurate and continuous movement of the Sample 11 in the x direction.
  • This embodiment may for example be combined with one of the above-mentioned methods.
  • the piezo drive a continuous tracking of the sample 11 is possible.
  • the sample 11 is brought by means of the sample carrier 12 in a certain position and brought from there by means of the piezo drive in a final position, which serves for example as the starting position described above. From this, the sample 1 1 is moved by means of the piezo drive.
  • the sample 11 is also intended to move the sample 11 continuously borrowed. For example, it is provided to carry out steps S6 and S10 of FIG. 6 simultaneously. During the removal of the layer L1 (or L2, L3 and L4), the sample 11 is slowly advanced by means of the piezo drive, while the first particle beam removes the advancing layer of the sample 11.

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Abstract

L'invention concerne un procédé et un dispositif (1, 24) de génération de données d'images tridimensionnelles d'un échantillon (11). L'invention utilise un premier faisceau de particules pour libérer une surface et un deuxième faisceau de particules pour générer une image de la surface. Initialement un seul déplacement de l'échantillon (11) suffit pour focaliser le premier faisceau de particules et/ou le deuxième faisceau de particules sur une surface effectivement libérée de l'échantillon (11). Les autres surfaces libérées étant toujours situées en la même position, toute focalisation ultérieure du premier faisceau de particules et/ou du deuxième faisceau de particules devient superflue.
EP10710833A 2009-03-26 2010-03-18 Procédé et dispositif de génération de données d'images tridimensionnelles Ceased EP2411998A1 (fr)

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DE102009001910A DE102009001910A1 (de) 2009-03-26 2009-03-26 Verfahren und Vorrichtung zur Erzeugung dreidimensionaler Bilddaten
PCT/EP2010/053561 WO2010108852A1 (fr) 2009-03-26 2010-03-18 Procédé et dispositif de génération de données d'images tridimensionnelles

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10204762B2 (en) 2012-07-16 2019-02-12 Fei Company Endpointing for focused ion beam processing
EP2903773B1 (fr) * 2012-10-05 2016-08-31 Fei Company Dépôt brut pour permettre une protection de broyeur incliné
US9190241B2 (en) * 2013-03-25 2015-11-17 Hermes-Microvision, Inc. Charged particle beam apparatus
JP5464535B1 (ja) * 2013-07-23 2014-04-09 株式会社日立ハイテクノロジーズ Ｅｂｓｄ検出器で所望箇所を容易に分析できる荷電粒子線装置およびその制御方法
EP2924710A1 (fr) * 2014-03-25 2015-09-30 Fei Company Imagerie d'un échantillon à l'aide de faisceaux multiples et un seul détecteur
US9679743B2 (en) * 2015-02-23 2017-06-13 Hitachi High-Tech Science Corporation Sample processing evaluation apparatus
US10236156B2 (en) 2015-03-25 2019-03-19 Hermes Microvision Inc. Apparatus of plural charged-particle beams
CN105424607A (zh) * 2015-12-25 2016-03-23 中国石油大学(北京) 基于斜入射光反射差方法的ct装置和方法
DE102016002883B4 (de) * 2016-03-09 2023-05-17 Carl Zeiss Microscopy Gmbh Verfahren zum Struktuieren eines Objekts und Partikelstrahlsystem hierzu
WO2018146804A1 (fr) * 2017-02-13 2018-08-16 株式会社 日立ハイテクノロジーズ Dispositif à faisceau de particules chargées
US9905394B1 (en) * 2017-02-16 2018-02-27 Carl Zeiss Microscopy Gmbh Method for analyzing an object and a charged particle beam device for carrying out this method
DE102019214939A1 (de) * 2019-09-27 2021-04-01 Carl Zeiss Microscopy Gmbh Verfahren zum Analysieren, Abbilden und/oder Bearbeiten eines Gebiets eines Objektsund Teilchenstrahlvorrichtung zum Ausführen des Verfahrens
CN111812134B (zh) * 2020-07-21 2023-07-21 山东省分析测试中心 获取熔覆金属三维组织信息的检测台及其操作办法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5460034A (en) * 1992-07-21 1995-10-24 The United States Of America As Represented By The Secretary Of The Air Force Method for measuring and analyzing surface roughness on semiconductor laser etched facets
US6288393B1 (en) * 1998-01-28 2001-09-11 Chipworks Automated method of circuit analysis

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1550867A (en) * 1975-08-04 1979-08-22 Hughes Aircraft Co Positioning method and apparatus for fabricating microcircuit devices
DE3908248A1 (de) * 1989-03-14 1990-09-20 Schenck Ag Carl Verfahren und einrichtung zur messung von axialen verlagerungen zwischen einem drehbaren oder rotierenden koerper und einem drehfest zum koerper angeordneten bauteil
JPH0562638A (ja) * 1991-09-04 1993-03-12 Hitachi Ltd 集束イオンビーム装置
JP3373585B2 (ja) * 1993-04-07 2003-02-04 株式会社日立製作所 走査型プローブ加工観察装置
US5936311A (en) * 1996-12-31 1999-08-10 Intel Corporation Integrated circuit alignment marks distributed throughout a surface metal line
JP2004294282A (ja) * 2003-03-27 2004-10-21 Renesas Technology Corp 結晶解析装置
TWI345054B (en) * 2003-05-30 2011-07-11 Ebara Corp Specimen inspection device and method, and method for making a semiconductor device using such specimen inspection device and method
JP4359232B2 (ja) * 2004-12-20 2009-11-04 株式会社日立ハイテクノロジーズ 荷電粒子線装置
US7312448B2 (en) 2005-04-06 2007-12-25 Carl Zeiss Nts Gmbh Method and apparatus for quantitative three-dimensional reconstruction in scanning electron microscopy
JP4927345B2 (ja) * 2005-04-07 2012-05-09 ルネサスエレクトロニクス株式会社 試料体の加工観察装置及び試料体の観察方法
JP4474337B2 (ja) * 2005-07-08 2010-06-02 株式会社日立ハイテクノロジーズ 試料作製・観察方法及び荷電粒子ビーム装置
JP4676339B2 (ja) * 2006-01-10 2011-04-27 株式会社日立ハイテクノロジーズ 荷電ビーム装置及び試料作製・観察方法
JP2007333682A (ja) * 2006-06-19 2007-12-27 Jeol Ltd イオンビームを用いた断面試料作製装置
EP2009421A1 (fr) * 2007-06-29 2008-12-31 FEI Company Procédé de séparation d'une lamelle pour l'inspection MET à partir d'une carotte
US8274063B2 (en) * 2007-08-08 2012-09-25 Sii Nanotechnology Inc. Composite focused ion beam device, process observation method using the same, and processing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5460034A (en) * 1992-07-21 1995-10-24 The United States Of America As Represented By The Secretary Of The Air Force Method for measuring and analyzing surface roughness on semiconductor laser etched facets
US6288393B1 (en) * 1998-01-28 2001-09-11 Chipworks Automated method of circuit analysis

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2010108852A1 *

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