EP2401773A2 - Cristallisation laser par irradiation - Google Patents

Cristallisation laser par irradiation

Info

Publication number
EP2401773A2
EP2401773A2 EP09807437A EP09807437A EP2401773A2 EP 2401773 A2 EP2401773 A2 EP 2401773A2 EP 09807437 A EP09807437 A EP 09807437A EP 09807437 A EP09807437 A EP 09807437A EP 2401773 A2 EP2401773 A2 EP 2401773A2
Authority
EP
European Patent Office
Prior art keywords
laser
semiconductor layer
lasers
lines
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09807437A
Other languages
German (de)
English (en)
Inventor
Hans-Ulrich Zühlke
Gabriele Eberhardt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jenoptik Automatisierungstechnik GmbH
Original Assignee
Jenoptik Automatisierungstechnik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jenoptik Automatisierungstechnik GmbH filed Critical Jenoptik Automatisierungstechnik GmbH
Publication of EP2401773A2 publication Critical patent/EP2401773A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a process for the crystallization or recrystallization of a semiconductor layer, in particular an amorphous silicon layer for a solar cell, according to claim 1, and a laser system for carrying out the method according to claim 11.
  • the semiconductor layers form the seed and absorber layer of a solar cell with a glass-containing substrate.
  • the seed layer is an amorphous silicon layer deposited on the substrate. It is irradiated in tracks and while overlapping with a laser, such as a diode laser. The overlapping takes place in such a way that a part of the coarse-grained regions of the preceding track are remelted, whereby an improved crystallization is achieved and the solar cell has an increased energy efficiency.
  • the seed layer is doped by diffusion with boron or phosphate. Subsequently, the absorber layer is applied to the seed layer.
  • the absorber layer consists of additionally deposited amorphous silicon. After reaching a certain layer thickness, the additional silicon is irradiated in tracks with a pulsed excimer laser. In this case, the excimer laser is guided over the coated substrate in such a way that the irradiation surfaces adjoin one another and thus form linear boundary regions.
  • a disadvantage of this type of laser crystallization is that the substrate is irradiated in tracks one after the other or scanned, whereby the treatment of large-area substrates is correspondingly time-consuming. Furthermore, it is disadvantageous that the entire realizable focal width of the laser is used, whereby not only the guidance of the laser across the substrate for forming the overlap or boundary regions must be very accurate, but also the laser has to have a very accurate energy distribution profile ,
  • a method of laser crystallization of a semiconductor layer having a plurality of lasers arranged side by side along a line is described in US 6,780,692 B2.
  • the lasers are arranged downstream of means for homogenizing the radiation intensity so that a laser line with a homogeneous radiation intensity is imaged on the irradiated surface of a substrate.
  • a method for the production of solar cells is described in EP 1 738 402 B1, in which a laser beam is imaged in a line focus on a solid (substrate), the length of the line focus being between 100 ⁇ m and 10 mm, and the Width is less than 10 microns.
  • the substrate should be mounted on an X-Y linear displacement table and the laser beam stationary remain fixed in space.
  • the substrate remains stationary and the optical system, which directs the laser beam onto the substrate, scans the laser beam over the substrate.
  • the substrate is sequentially scanned into strips equal to the length of the line focus.
  • the strips are in principle subjected to homogeneous laser radiation.
  • the boundary areas between the adjacent strips are problematic, since on the one hand the intensity at the ends of the laser line can not be abruptly zero, which would correspond to an edge in the intensity distribution curve of 90 °, and on the other hand the strips are practically not ideal and can be irradiated side by side without overlapping.
  • boundary area As the boundary area to be referred to below the area in which two adjacent laser lines have a drop in intensity, d. H. it is the area defined by the length of the flanks of the intensity distribution curves plus a possible distance or minus any overlap area.
  • the ends of the laser lines overlap in this boundary region, whereby advantageously the border region is minimized in its width.
  • the width of the overlap region and thus also the width of the boundary region vary depending on the stability of the laser line and the accuracy of the scanning movement of the adjacent laser lines, the boundary region is undefined with its electrical properties, because the energy input in the border areas differs from the otherwise least almost constant energy input into the scanned surface areas undefined. As a result, the crystallization of the semiconductor layer takes place at a deviating and undefined extent in the boundary regions.
  • the object of the present invention is to provide a method and a laser system for
  • a laser system is provided with a plurality of lasers, each with an associated beam shaping optics, each focusing a laser beam in a laser line and longitudinally adjacent to the semiconductor layer, wherein each adjacent laser lines form a boundary region, preferably with an overlap region.
  • a relative movement, preferably perpendicular to the laser lines is generated between the laser system and the substrate, so that the semiconductor layer is scanned by the individual laser lines in each case along a strip in the working direction over a large area.
  • the boundary regions with the overlapping regions on the semiconductor layer are each guided over a passive region, in which after a subsequent processing step, at least in sections, no absorption of light photons takes place.
  • the length of the laser lines which is equal to the focal length in the case of direct focusing on the semiconductor layer, is matched to the center distance of these passive regions.
  • the semiconductor layer can also be scanned in strips successively with one or preferably with a few laser lines. Accordingly, the laser system would require only a laser beam shaping optics for this purpose. The lower demand for lasers is offset by the greater amount of time required.
  • the invention does not use the entire realizable focus length of the laser lines for restructuring, but it is the end portions of the laser lines, which are displayed on the passive areas and lead due to the intensity drop and the eventual overlap to a different energy input, quasi hidden whereby the active regions lying between the passive regions, which serve for photon absorption, are exposed to laser radiation of a homogeneous intensity distribution, so that the efficiency of the semiconductor layer can be accurately predetermined.
  • the width of the border regions is equal to or smaller than the width of the passive regions.
  • the semiconductor layer is removed at least in sections in the passive regions.
  • the passive regions are formed by isolation trenches formed, for example, in a P2 patterning.
  • the structure width of the isolation trenches is preferably 10 ⁇ m to 100 ⁇ m.
  • the passive regions extend in the direction of the relative movement (working direction) substantially over the entire length of the semiconductor layer.
  • the center distances of two adjacent passive regions are each defined by two parallel imaginary lines on the semiconductor layer, which preferably have a distance of 6 mm to 8 mm from each other.
  • the relative movement between the laser system and the substrate can take place via a movement of the laser lines or via a movement of the substrate.
  • the substrate material such as substrate wafers or the like, is generally uneven under production conditions.
  • focus width which is preferably very narrow in the working direction, only a very small depth of field is conventionally available in the technical realization.
  • a laser line can be individually and locally focused on this area. In this way, the unevenness or waviness of the substrate can be taken into account in a differentiated manner.
  • a laser system has a plurality of juxtaposed lasers, each with a beam shaping optics, which each focus a laser beam emitted by a laser beam in a laser line and in the longitudinal direction side by side on the semiconductor layer.
  • adjacent laser lines on the semiconductor layer each form a boundary region, which is formed in each case on a passive region of the semiconductor layer.
  • the lasers are pulsed diode lasers having a wavelength range of about 532 nm.
  • the diode lasers may be operated in combination with NIR lasers in the cw range.
  • the laser system can have an advancing device.
  • FIG. 1 shows a plan view of a semiconductor layer subjected to a multiplicity of laser lines
  • FIG. 2 shows a profile of the irradiation energy distribution along the laser lines
  • FIG. 3 shows a schematic diagram of a perspective structure of a laser system according to the invention.
  • FIG. 1 shows a top view of a semiconductor layer 2, which is covered by a multiplicity of Laser lines 6 of a laser system 6 shown in Figure 3 is scanned strip by strip.
  • the semiconductor layer 2 is, as a silicon-based seed or absorber layer of a thin-film solar cell, applied to a glass substrate.
  • the application of the semiconductor layer 2 to the substrate was carried out by known methods, such as plasma enhanced chemical vapor deposition (PECVD).
  • PECVD plasma enhanced chemical vapor deposition
  • the scanning of the semiconductor layer 2 by the laser lines 8, 10, 12 serves to crystallize the amorphous semiconductor layer 2.
  • the juxtaposition of the laser lines 8, 10, 12 extends in the y-direction over the entire width of the semiconductor layer 2 and is perpendicular thereto Scanned in the x direction (working direction) over the length of the semiconductor layer 2.
  • the laser lines 8, 10, 12 each form with their adjacent laser lines 8, 10, 12 in their end portions boundary regions 15, 17 preferably with overlap regions 14, 16 on the semiconductor layer. 2
  • the laser lines 8, 10, 12 are generated by lasers 18, 20, 22 of the laser system 6 shown in FIG.
  • the boundary regions 15, 17 are guided on the semiconductor layer 2 via passive regions 23, 25 which are delimited by two parallel imaginary lines 24, 26 and 28, 30, respectively.
  • the lines 24, 26 and 28, 30 extend in the x direction over the entire length of the semiconductor layer 2 and subdivide the surface of the semiconductor layer into passive and active regions.
  • the passive regions are formed by isolation trenches, which form in a subsequent P2 structuring by, for example, mechanical removal or ablation by means of lasers of the semiconductor layer 2.
  • the isolation trenches have a structure width of 10 ⁇ m to 100 ⁇ m.
  • the overlapping end sections 14, 16 of the laser lines 8, 10, 12, advantageously the entire boundary regions 15, 17, are imaged along the subsequently formed isolation trenches, which have no significance with regard to the energy efficiency of the solar cell, since there is no absorption in the isolation trenches of light photons occurs.
  • FIG. 2 shows a profile of an irradiation energy distribution 32 over the length of the juxtaposed laser lines.
  • the irradiation energy distribution 32 is composed of individual energy areas 34, 36, 38 of the laser lines.
  • the individual energy regions 34, 36, 38 form boundary regions 15, 17 with internal overlapping regions 14, 16.
  • the expansion of the overlap regions 14, 16 in the y-direction can be achieved by a displacement of the laser system 6 in the z-direction or by a modified fanning of the Energy ranges 34, 36, 38, ie changed focus lengths vary.
  • FIG. 3 shows an example of a laser system 6 according to the invention.
  • the laser system 6 has a multiplicity of lasers 18, 20, 22 arranged side by side in the y-direction on.
  • the lasers 18, 20, 22 are pulsed diode lasers with a wavelength range of about 532 nm. They emit laser beams 40, 42, 44 which are each focused via a downstream beam-shaping optical system 46, 48, 50 into a line focus which is as homogeneous as possible Has intensity distribution over its focal length and as narrow as possible over its focus width.
  • the relative movement between the laser lines and the substrate can be realized by scanner mirrors, not shown, which are arranged downstream of the beam-forming optics or even via a feed device, not shown, of the laser system 6.
  • the laser beams 40, 42, 44 which are emitted by the lasers 18, 20, 22, respectively pass through their associated beam shaping optics 46, 48, 50 and impinge on the semiconductor layer 2. They form the laser lines 8, 10, 12 and the boundary regions 15, 17 with internal overlapping regions 14, 16 between the adjacent laser lines 8, 10, 12.
  • Example of an amorphous Si-based seed or absorber layer on a glass substrate is also suitable for other systems, such as CIS (chalcopyrite, CuInSe 2 ), CIGS (calkopyrite with addition of gallium, Cu (In, Ga), (S, Se) 2 ) or CdTe (cadmium Telluride), provided thermal processes with scanned energy input are used for production.
  • CIS chalcopyrite, CuInSe 2
  • CIGS calkopyrite with addition of gallium, Cu (In, Ga), (S, Se) 2
  • CdTe cadmium Telluride

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Thermal Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

L'invention concerne un procédé de restructuration d'une couche de semi-conducteurs (2) au moyen d'une pluralité de lasers (18, 20, 22) disposés côte à côte, reproduisant, au moyen d'une optique de mise en forme de faisceau respective (46, 48, 50), des lignes laser (8, 10, 12) disposées côte à côte sur la couche de semi-conducteurs (2), présentant des zones limite (15, 17) et des zones de chevauchement intérieures (14, 16). Au moins les zones de chevauchement intérieures (14, 16) sont reproduites intégralement sur des zones passives (14, 16) de la couche de semi-conducteurs (2), dans lesquelles la couche de semi-conducteurs est retirée dans une étape de traitement consécutive. L'invention concerne également un système laser pour la mise en oeuvre du procédé.
EP09807437A 2009-02-27 2009-12-10 Cristallisation laser par irradiation Withdrawn EP2401773A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009010841A DE102009010841A1 (de) 2009-02-27 2009-02-27 Laserkristallisation durch Bestrahlung
PCT/DE2009/050072 WO2010097064A2 (fr) 2009-02-27 2009-12-10 Cristallisation laser par irradiation

Publications (1)

Publication Number Publication Date
EP2401773A2 true EP2401773A2 (fr) 2012-01-04

Family

ID=42371765

Family Applications (1)

Application Number Title Priority Date Filing Date
EP09807437A Withdrawn EP2401773A2 (fr) 2009-02-27 2009-12-10 Cristallisation laser par irradiation

Country Status (3)

Country Link
EP (1) EP2401773A2 (fr)
DE (1) DE102009010841A1 (fr)
WO (1) WO2010097064A2 (fr)

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Publication number Priority date Publication date Assignee Title
DE102014013015B4 (de) * 2014-09-02 2020-08-20 Friedrich Birkle Reinigungssystem für die Chirugie

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JPS5651824A (en) * 1979-10-04 1981-05-09 Toshiba Corp Preparation of semiconductor device
JPH07308788A (ja) * 1994-05-16 1995-11-28 Sanyo Electric Co Ltd 光加工法及び光起電力装置の製造方法
JP2000315652A (ja) * 1999-04-30 2000-11-14 Sony Corp 半導体薄膜の結晶化方法及びレーザ照射装置
DE10042733A1 (de) 2000-08-31 2002-03-28 Inst Physikalische Hochtech Ev Multikristalline laserkristallisierte Silicium-Dünnschicht-Solarzelle auf transparentem Substrat
JP2003059858A (ja) 2001-08-09 2003-02-28 Sony Corp レーザアニール装置及び薄膜トランジスタの製造方法
US6984573B2 (en) * 2002-06-14 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and apparatus
DE102004036220B4 (de) 2004-07-26 2009-04-02 Jürgen H. Werner Verfahren zur Laserdotierung von Festkörpern mit einem linienfokussierten Laserstrahl
DE102007009924A1 (de) * 2007-02-27 2008-08-28 Carl Zeiss Laser Optics Gmbh Durchlaufbeschichtungsanlage, Verfahren zur Herstellung kristalliner Dünnschichten und Solarzellen sowie Solarzelle
EP2130234B1 (fr) * 2007-02-27 2014-10-29 Carl Zeiss Laser Optics GmbH Installation de revêtement en continu et procédé de production de films minces cristallins

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Title
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Also Published As

Publication number Publication date
WO2010097064A3 (fr) 2010-10-21
DE102009010841A1 (de) 2010-09-02
WO2010097064A2 (fr) 2010-09-02

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