EP2369623A2 - Light emitting device having several light emitting diodes and light unit having the same - Google Patents

Light emitting device having several light emitting diodes and light unit having the same Download PDF

Info

Publication number
EP2369623A2
EP2369623A2 EP11159496A EP11159496A EP2369623A2 EP 2369623 A2 EP2369623 A2 EP 2369623A2 EP 11159496 A EP11159496 A EP 11159496A EP 11159496 A EP11159496 A EP 11159496A EP 2369623 A2 EP2369623 A2 EP 2369623A2
Authority
EP
European Patent Office
Prior art keywords
light emitting
light
wavelength
main peak
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11159496A
Other languages
German (de)
English (en)
French (fr)
Inventor
Joong In An
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of EP2369623A2 publication Critical patent/EP2369623A2/en
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Definitions

  • the embodiment relates to a light emitting device and a light unit having the same.
  • a light emitting diode may constitute a light source for generating light by using GaAs, AlGaAs, GaN, InGaN, and InGaAlP-based compound semiconductor materials.
  • Such an LED is packaged so as to be used as a light emitting device that emits lights having various colors.
  • the light emitting device is used as a light source in various products such as a lighting indicator, a character indicator, and an image display.
  • the embodiment provides a light emitting device having at least two light emitting diodes.
  • the embodiment provides a light emitting device including light emitting diodes capable of emitting lights having the same color band and different main peaks.
  • the embodiment provides a light unit including a plurality of light emitting device employing light emitting diodes capable of emitting lights having wavelength bands with different main peaks.
  • a light emitting device includes a body; a first light emitting diode for emitting a light having a first main peak in a wavelength range of a first color; a second light emitting diode for emitting a light having a second main peak in the wavelength range of the first color; and a plurality of lead electrodes electrically connected to at least one of the first and second light emitting diodes on the body, wherein the first main peak of the first light emitting diode and the second main peak of the second light emitting diode have a wavelength difference of at least 75% based on the wavelength range of the first color.
  • a light emitting device includes a body having a cavity; a first light emitting diode for emitting a light having a first main peak in a wavelength range of a first color band; a second light emitting diode for emitting a light having a second main peak in the wavelength range of the first color band; a plurality of lead electrodes electrically connected to at least one of the first and second light emitting diodes on the body; and a resin member disposed in the cavity, wherein a central peak of the first main peak of the first light emitting diode is closer to a short wavelength than to a central wavelength of the first color band, and a central peak of the second main peak of the second light emitting diode is closer to a long wavelength than to the central wavelength of the first color band.
  • a light unit includes a board; and a plurality of light emitting devices arrayed on the board, wherein at least one first light emitting device of the light emitting devices includes a body; a first light emitting diode for emitting a light having a first main peak in a wavelength range of a first color; a second light emitting diode for emitting a light having a second main peak in the wavelength range of the first color; and a plurality of lead electrodes electrically connected to at least one of the first and second light emitting diodes on the body, and wherein the first main peak of the first light emitting diode and the second main peak of the second light emitting diode have a wavelength difference of at least 75% based on the wavelength range of the first color.
  • FIG. 1 is a side sectional view showing a light emitting device according to the first embodiment
  • FIG. 2 is a plan view of FIG. 1 ;
  • FIG. 3 is a table showing an example of mixing of main peaks between light emitting devices according to the embodiment.
  • FIG. 4 is a grapy showing an example of mixing of main peaks between light emitting devices shown in FIG. 1 ;
  • FIG. 5 is a side sectional view showing a light emitting device package according to the second embodiment
  • FIG. 6 is a side sectional view showing a light emitting device package according to the third embodiment.
  • FIG. 7 is a view showing a light emitting module according to the fourth embodiment.
  • FIG. 8 is a view showing a light emitting module according to the fifth embodiment.
  • FIG. 9 is a side sectional view showing a display device according to the sixth embodiment.
  • FIG. 10 is an exploded perspective view showing a display device according to the seventh embodiment.
  • FIG. 11 is a graph showing spectrums of a plurality of light emitting devices in a light unit according to the embodiment.
  • FIG. 12 is a perspective view showing a lighting unit including a light emitting device according to the embodiment.
  • each layer shown in the drawings may be exaggerated, omitted or schematically drawn for the purpose of convenience or clarity.
  • the size of elements does not utterly reflect an actual size.
  • FIG. 1 is a side sectional view showing a light emitting device according to the first embodiment, and FIG. 2 is a plan view of FIG. 1 ;
  • a light emitting device 10 includes a body 20 having a cavity 22 with an opened top surface, a plurality of lead electrodes 23 and 24, light emitting diodes 31 and 32 electrically connected to the lead electrodes 23 and 24, and a resin member 35 filled in the cavity 22.
  • the body 20 may include one of a silicon material, a ceramic material and a resin material.
  • the body 20 may include at least one of silicon, silicon carbide (SiC), aluminum nitride (A1N), polyphthalamide (PPA), and liquid crystal polymer (LCP), but the embodiment is not limited thereto.
  • the body 20 can be prepared or injection-molded as a structure of a single-layer substrate or a multi-layer substrate, but the embodiment does not limit the shape and the structure of the body.
  • the body 20 is formed at an upper portion thereof with the cavity 22 having the opening.
  • the cavity 22 has a predetermined depth from the top surface of the body 20.
  • the cavity 22 may have a concave cup shape or a concave tube shape having a predetermined curvature.
  • a top surface of the cavity 22 may have a circular shape or a polygonal shape, but the embodiment is not limited thereto.
  • An inner wall of the cavity 22 may be inclined toward a bottom surface of the cavity 22 to reflect the incident light toward the opening.
  • the lead electrodes 23 and 24 are arranged at both sides of the body 20.
  • the lead electrodes 23 and 24 are disposed at the lower surface of the body 20 to serve as external electrodes.
  • the lead electrodes 23 and 24 are prepared as a lead frame type, a metal thin film type or a PCB (printed circuit board) pattern type.
  • the lead frame type lead electrodes 23 and 24 will be described below.
  • the light emitting diodes 31 and 32 are bonded to the second lead electrode 24 by an adhesive and electrically connected to the lead electrodes 23 and 24 by using a plurality of wires 34.
  • the light emitting diodes 31 and 32 can be mounted by selectively using a die bonding scheme employing at least one wire or an adhesive, and a flip bonding scheme for reverse bonding of a chip. Such a bonding scheme may be selected according to the type of LED chips and the position of the electrode.
  • the light emitting diodes 31 and 32 can be connected to the lead electrodes 23 and 24 in series or parallel, but the embodiment is not limited thereto.
  • the light emitting diodes 31 and 32 may selectively include a semiconductor device manufactured by using a compound semiconductor, such as AlInGaN, InGaN, GaN, GaAs, InGaP, AlInGaP, InP, or InGaAs.
  • the light emitting diodes 31 and 32 may include a blue LED chip, a yellow LED chip, a green LED chip, a red LED chip, a UV (ultraviolet) LED chip, a pumpkin-color LED chip, or a blue-green LED chip. Further, the number and type of the light emitting diodes 31 and 32 disposed in the light emitting device 10 can be changed and the light emitting diodes 31 and 32 may emit the light having the same color.
  • the resin member 35 is filled in the cavity 22.
  • the resin member 35 may include a transparent resin material, such as silicon or epoxy.
  • a top surface of the resin member 35 may have a flat surface, a concave surface or a convex surface and a lens can be attached onto the resin member 35.
  • the phosphor may include a yellow phosphor or a yellow/red phosphor.
  • the phosphor is a yellow phosphor or a yellow/red phosphor.
  • the light emitting device may include a protective device for protecting the light emitting diodes 31 and 32, but the embodiment is not limited thereto.
  • the light emitting diodes 31 and 32 have the rank which is the reference for dividing the light emitting diodes 31 and 32 into groups or units. In detail, after the light emitted from the light emitting diodes 31 and 32 has been measured, the light emitting diodes 31 and 32 are divided into groups or units based on the chromatic rank, luminous rank and peak wavelength rank according to the characteristics of the light emitted from the light emitting diodes 31 and 32.
  • the light emitting device 10 includes a plurality of light emitting diodes 31 and 32 which emit the spectrums having the same color wavelength band.
  • the light emitting diodes 31 and 32 may represent different peak wavelengths.
  • the light emitting diode 31 represents the first main peak which is closer to the short wavelength than to the central wavelength of the first color band
  • the light emitting diode 32 represents the second main peak which is closer to the long wavelength than to the central wavelength of the first color band.
  • the light emitting diode that emits the wavelength spectrum of blue light will be described as an example.
  • the wavelength band of the blue light is about 380nm to about 500nm, preferably, about 380nm to about 480nm, more preferably, about 440nm to about 460nm.
  • the short wavelength of the blue wavelength is about 380nm or less, preferably, about 440nm or less.
  • the long wavelength of the blue wavelength is about 500nm or above, preferably, about 480nm or above, more preferably, about 460nm or above.
  • the difference in wavelength between the first main peak of the first light emitting diode 31 and the second main peak of the second light emitting diode is about 75% or more within the wavelength range of one color.
  • the difference in wavelength between the first main peak of the first light emitting diode 31 and the second main peak of the second light emitting diode can be represented as the difference between the central peak of the first main peak and the central peak of the second main peak.
  • the difference in wavelength between the first main peak of the first light emitting diode 31 and the second main peak of the second light emitting diode can be represented as the actual wavelength difference, which is obtained by subtracting the second main peak from the first main peak.
  • the difference is about 75% or above of 20nm, which is obtained by subtracting 440nm from 460nm, that is, about 15nm or above.
  • the difference of 75% is about 7.5nm or above.
  • the wavelength range of the red light is about 615nm to about 630nm, so the difference of 75% is about 11.25nm or above.
  • the wavelength range of the yellow light is about 510nm to about 525nm, so the difference of 75% is about 11.25nm or above.
  • the main peak may include the dominant wavelength or the FWHM (full width at half maximum).
  • FIG. 3 is a table showing an example of mixing of main peaks between light emitting devices according to the embodiment.
  • the blue wavelength band is in the range of about 440nm to about 460nm.
  • the main peak of the blue wavelength can be obtained in the range of W1 to W8.
  • Each main peak in W1 to W8 can be obtained at an interval of about 0.5nm to about 3.5nm, but the embodiment is not limited thereto.
  • W1 is about 440nm to about 442.5nm
  • W2 is about 442.5nm to about 445nm
  • W3 is about 445nm to about 447.5nm
  • W4 is about 447.5nm to about 450nm
  • W5 is about 450nm to about 452.5nm
  • W6 is about 452,5nm to about 455nm
  • W7 is about 455nm to about 457.5nm
  • W8 is about 457.5nm to about 460nm.
  • the peak wavelengths of two light emitting diodes can be mixed with each other in the form of M1 to M8 by using A1 to A8 and A2 to H2.
  • the embodiment may include two light emitting diodes (for instance, M1 and M8) representing great difference of the main peak.
  • the first and second light emitting diodes 31 and 32 of the embodiment may be realized by mixing A1 and A2 or H2 and H1.
  • the difference between the central peaks of the first and second light emitting diodes 31 and 32 may be about 10nm or above, preferably, about 15nm to about 20nm.
  • the main peaks of the first and second light emitting diodes having the range of W1 and W8 are mixed so that the main peak Wx having the central peak W0 is represented.
  • the central peak W0 is a peak in a set. For instance, when the central peak W0 is 450nm, the central peak W0 is in the range of 450nm ⁇ 1.25nm.
  • the first main peak W1 of the first light emitting diode is a short wavelength spaced apart from the central peak (for instance, 450nm) by 37.5% or more
  • the second main peak W8 of the second light emitting diode is a long wavelength spaced apart from the central peak (for instance, 450nm) by 37.5% or more. Since 37.5% is 7.5nm, the first and second main peaks W1 and W8 are spaced apart from the central peak W0 by 7.5nm, respectively.
  • the first main peak W1 of the first light emitting diode is in the range of about 440nm to about 442.5nm and the second main peak W8 of the second light emitting diode is in the range of about 457.5nm to about 460nm.
  • the difference T between the first main peak W1 of the first light emitting diode and the second main peak W8 of the second light emitting diode corresponds to the difference between the central peak of the first main peak and the central peak of the second main peak.
  • the difference T between the central peaks of the first and second main peaks W1 and W8 is about 75% based on the wavelength range WR of the first color band.
  • the central peaks of the first and second main peaks W1 and W8 are spaced apart from the central peak W0 of the first color band by about 37.5% in opposition to each other.
  • the first main peak W1 of the first light emitting diode can be mixed with the second main peak W8 of the second light emitting diode in such a manner that the main peak Wx can be represented as the central peak in the set.
  • the central peak may be a peak wavelength Wp or the actual central wavelength of the main peak.
  • At least three light emitting diodes 31, 32 and 33 can be disposed in a light emitting device 10A as shown in FIG. 5 .
  • the light emitting diodes 31, 32 and 33 may include first and second light emitting diodes 31 and 32 having the spectrum with the same color and representing the relatively great difference in wavelengths, and a third light emitting diode 33 having a peak wavelength between main peaks of the first and second light emitting diodes 31 and 32.
  • the first light emitting diode 31 is disposed at one side of the cavity 22
  • the second light emitting diode 32 is disposed at the other side of the cavity 22
  • the third light emitting diode 33 is disposed at the center of the cavity 22.
  • the first and second light emitting diodes 31 and 32 are aligned such that they have the greatest difference of the wavelength in the blue spectrum, and the third light emitting diode 33 has the third main peak, which is equal or approximate to the average of the central peaks of the first and second light emitting diodes 31 and 32.
  • This wavelength range is about 0.5nm to about 2.5nm.
  • the third peak wavelength has a value between the first and second peak wavelengths.
  • the first to third light emitting diodes 31 to 33 may be prepared as the combination of W1/W8/W4 or W1/W8/W5 in the table shown in FIG. 3 .
  • the first to third light emitting diodes 31 to 33 may be variously arranged such that they represent the peak wavelength approximate to the central peak of a desired color band.
  • the central peak is the peak wavelength of each color spectrum. For instance, if the peak wavelength is 450nm, the central peak is in the range of 450 ⁇ 1.25nm.
  • At least two light emitting diodes representing the green wavelength spectrum or the red wavelength spectrum can be mixed as described above.
  • FIG. 6 is a side sectional view showing a light emitting device according to the third embodiment.
  • the light emitting device 10B includes an insulating layer 21 formed on a surface of a conductive body 20A, a plurality of lead electrodes 23A and 24A coated on the conductive body 20A, and a plurality of light emitting diodes 31 and 32 disposed on the lead electrodes 23A and 24A.
  • the conductive body 20A can be formed by adding N type or P type conductive dopant to a silicon wafer.
  • a protective device can be formed on the body 20A to protect the light emitting diodes 31 and 32, or the light emitting diodes 31 and 32 can be directly formed on the body, such as a silicon wafer, but the embodiment is not limited thereto.
  • FIG. 7 is a view showing a light emitting module according to the fourth embodiment.
  • the light emitting module 60 includes first light emitting devices 10 according to the first embodiment and second light emitting devices 11 having wavelength combination different from that of the first light emitting devices 10.
  • the first and second light emitting devices 10 and 11 are arrayed on a board 63.
  • the board 63 may selectively include a substrate having a metal plate, a resin PCB, a ceramic substrate or a flexible substrate.
  • the first and second light emitting devices 10 and 11 are alternately arrayed on the board 63.
  • the second light emitting device 11 may include at least one of M2 to M7 shown in the table of FIG. 3 .
  • the number of light emitting diodes disposed in the first light emitting device 10 may be different from the number of light emitting diodes disposed in the second light emitting device 11, but the embodiment is not limited thereto.
  • only the light emitting devices 10 shown in FIG. 1 can be arrayed on the board 63.
  • the light emitting devices shown in FIG. 5 or 6 can be selectively used in addition to the light emitting devices shown in FIG. 1 .
  • the light emitting module 60 shown in FIG. 7 includes a plurality of light emitting devices 10 and 11 which are arranged such that the difference of the central peak between the light emitting devices 10 and 11 is within 2.5nm.
  • a light emitting module 60A may include first light emitting devices 10 having wavelength combination as shown in FIG. 1 and light emitting devices 11A and 11B having wavelength combination different from that of the light emitting devices 10.
  • the light emitting devices 11A and 11B may be arrayed by selecting at least two of M2 to M7 shown in the table of FIG. 3 .
  • the light emitting module 60A shown in FIG. 8 includes a plurality of light emitting devices 10, 11A and 11B which are arranged such that the difference of the peak wavelength among the light emitting devices 10, 11 A and 11B is within 2.5nm.
  • the difference of the central peak between two different light emitting devices in the light emitting module 60 or 60A is within 2.5nm, so that the color stain caused by the difference of the color sensitivity in a set, such as the light unit, can be prevented.
  • FIG. 9 is a sectional view showing a display device according to the sixth embodiment.
  • the display device 50 includes a bottom cover 52, a plurality of light emitting devices 10 and 11 formed on a board 63, an optical sheet 54 and a display panel 55.
  • the board 63, the bottom cover 52, and the optical sheet 54 may serve as a light unit 51.
  • the bottom cover 52 includes a recess 53 having an open top surface. An inner wall of the recess is inclined.
  • the bottom cover 52 and a lateral side of the bottom cover 52 may be prepared as separate structures, but the embodiment is not limited thereto.
  • At least one board 63 is disposed on the bottom cover 52.
  • the first and second light emitting devices 10 and 11 are arrayed on the board 63.
  • the first and second light emitting devices 10 and 11 are arrayed on the board 63 such that the difference of the central peak between the first and second light emitting devices 10 and 11 is within 2.5nm. Since the difference of the peak between the light emitting devices 10 and 11 is narrowed, the color stain or the color sensitivity variation caused by the light emitting devices 10 and 11 can be reduced.
  • the optical sheet 54 may include at least one of a diffusion sheet, a horizontal/vertical prism sheet and a brightness enhancement sheet.
  • the diffusion sheet diffuses the incident light
  • the horizontal/vertical prism sheet concentrates the incident light onto the display region
  • the brightness enhancement sheet improves the light efficiency by reusing the wasted light.
  • the display panel 55 may be an LCD panel including first and second substrates and a liquid crystal layer interposed between the first and second substrates.
  • the first substrate may include a color filter array substrate and the second substrate may include a TFT array substrate, or vice versa.
  • the embodiment is not limited to the above display panel, but various modifications are possible.
  • a polarizing plate can be attached to at least one surface of the display panel, but the embodiment is not limited thereto.
  • FIG. 10 is an exploded perspective view showing a display device according to the seventh embodiment.
  • the display device 70 includes a board 83, a light emitting module 80 including light emitting devices 10 and 11, a reflective plate 71, a light guide plate 72, an optical sheet 73, and a display panel 74.
  • the light emitting module 80, the reflective plate 71, the light guide plate 72, and the optical sheet 73 may serve as a light unit.
  • the light unit can be protected by a bottom cover or a bottom chassis.
  • the light emitting module 80 includes the light emitting devices 10 and 11 representing the difference of the peak wavelength within 2.5nm. At least one of the light emitting devices 10 and 11 has the wavelength combination as described above.
  • the light guide plate 72 is disposed at one side of the light emitting module 80, the reflective plate 71 is disposed below the light guide plate 72 and the optical sheet 73 is disposed above the light guide plate 72.
  • the light guide plate 72 may be spaced apart from the light emitting devices 10 and 11 by a distance of 0.5mm or less.
  • the light guide plate 72 is made from a PC material or a PMMA (poly methyl methacrylate) material, but the embodiment is not limited thereto.
  • the reflective plate 71 reflects the light leaked from the light guide plate 72, and the optical sheet diffuses or collects the light incident through the light guide plate 72 such that the light can be irradiated to the display panel.
  • the light emitted from the light emitting module 80 is incident into the light guide plate 72 and the light guide plate 72 guides the light incident from the light emitting module 80 over the whole area of the display device so that the surface light is emitted.
  • the optical sheet 73 is disposed above the light guide plate 72.
  • the light guide plate 72 and the optical sheet 73 may be defined as an optical member.
  • the optical sheet 73 may include at least one of the diffusion sheet, the horizontal/vertical prism sheet, and the brightness enhancement film.
  • the display panel 74 may be prepared as an LCD panel.
  • FIG. 11 is a graph showing spectrums of a plurality of light emitting devices in a light unit according to the embodiment.
  • the spectrums shown in the graph are obtained from two light emitting devices and represent wavelengths of green and red phosphors excited by the light emitted from the blue light emitting diode.
  • the spectrums P1 and P2 of the two light emitting devices represent the main peaks of the green and red phosphors exited by the light emitted from the blue light emitting device. If the difference of the spectrum peak between two light emitting devices is within 2.5nm, the difference of the intensity of the main peak between the green color and the red color may rarely occur in the spectrums P1 and P2. That is, according to the embodiment, the difference of the peak between the light emitting diodes is set within the critical range in the light emitting device array, so that the difference of the excited wavelength of the phosphor, which is excited by absorbing the light emitted from the light emitting diode, can be reduced.
  • the difference of the excited wavelength caused by the light emitting diodes and the phosphor can be reduced, so that the variation of the color sensitivity, such as the reddish or the color stain caused by the difference of the main peaks, can be reduced in the light unit.
  • the embodiment can reduce the difference of the color sensitivity between light emitting diodes.
  • the embodiment can reduce the difference of the color sensitivity in the set caused by the light emitting device array, so that the color stain or the abnormal color can be reduced.
  • the embodiment can provide the light unit having the uniform color distribution.
  • FIG. 12 is a perspective view showing a lighting device according to the embodiment.
  • the lighting device 1500 includes a case 1510, a light emitting module 1530 disposed in the case 1510, and a connection terminal 1520 disposed in the case 1510 to receive power from an external power source.
  • the case 1510 includes a material having superior heat dissipation property.
  • the case 1510 includes a metallic material or a resin material.
  • the light emitting module 1530 may include a board 1532 and light emitting devices 10 and 11 according to the embodiment disposed on the board 1532.
  • the light emitting devices 10 and 11 according to the embodiment have main peaks which are different from each other in the same color band.
  • the light emitting devices 10 and 11 are spaced apart from each other or arranged in the form of a matrix.
  • the board 1532 includes an insulating member printed with a circuit pattern.
  • the board 1532 includes a PCB, an MCPCB, an FPCB, a ceramic PCB, and an FR-4 substrate.
  • the board 1532 may include a material that effectively reflects the light.
  • a coating layer can be formed on the surface of the board 1532. At this time, the coating layer has a white color or a silver color to effectively reflect the light.
  • At least one light emitting device can be disposed on the board 1532.
  • Each light emitting device 10 or 11 may include at least one LED (light emitting diode) chip.
  • the LED chip may include an LED that emits the light of visible ray band having red, green, blue or white color and a UV (ultraviolet) LED that emits UV light.
  • the light emitting devices 10 and 11 of the light emitting module 1530 can be variously combined to provide various color sensitivity and brightness.
  • the white LED, the red LED and the green LED can be combined to achieve the high color rendering index (CRI).
  • connection terminal 1520 is electrically connected to the light emitting module 1530 to supply power to the light emitting module 1530.
  • the connection terminal 1520 has a shape of a socket screw-coupled with the external power source, but the embodiment is not limited thereto.
  • the connection terminal 1520 can be prepared in the form of a pin inserted into the external power source or connected to the external power source through a wire.
  • the light emitting device can emit lights having various colors, so the light emitting device can be used as a light source in various products such as a lighting indicator, a character indicator, and an image display.
  • the lighting device may include a lighting lamp, a signal lamp, a headlight of a vehicle, and an electric signboard.
  • any reference in this specification to "one embodiment,” “an embodiment,” “example embodiment,” etc. means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention.
  • the appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
EP11159496A 2010-03-26 2011-03-24 Light emitting device having several light emitting diodes and light unit having the same Withdrawn EP2369623A2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100027405A KR100999809B1 (ko) 2010-03-26 2010-03-26 발광 소자 및 이를 구비한 라이트 유닛

Publications (1)

Publication Number Publication Date
EP2369623A2 true EP2369623A2 (en) 2011-09-28

Family

ID=43512616

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11159496A Withdrawn EP2369623A2 (en) 2010-03-26 2011-03-24 Light emitting device having several light emitting diodes and light unit having the same

Country Status (6)

Country Link
US (1) US8132934B2 (enrdf_load_stackoverflow)
EP (1) EP2369623A2 (enrdf_load_stackoverflow)
JP (1) JP2011211196A (enrdf_load_stackoverflow)
KR (1) KR100999809B1 (enrdf_load_stackoverflow)
CN (1) CN102201504A (enrdf_load_stackoverflow)
TW (1) TW201203504A (enrdf_load_stackoverflow)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130014256A (ko) * 2011-07-29 2013-02-07 엘지이노텍 주식회사 발광 소자 패키지 및 이를 이용한 조명 시스템
JP2013135083A (ja) * 2011-12-26 2013-07-08 Toyoda Gosei Co Ltd 発光装置
WO2013114642A1 (ja) * 2012-01-31 2013-08-08 シャープ株式会社 Ｌｅｄ分類方法、ｌｅｄ分類装置、ｌｅｄ分類プログラムおよび記録媒体
US9395051B2 (en) * 2012-04-13 2016-07-19 Cree, Inc. Gas cooled LED lamp
US8757839B2 (en) 2012-04-13 2014-06-24 Cree, Inc. Gas cooled LED lamp
US9410687B2 (en) 2012-04-13 2016-08-09 Cree, Inc. LED lamp with filament style LED assembly
JP2014007355A (ja) * 2012-06-27 2014-01-16 Rohm Co Ltd 半導体発光装置および照明装置
CN103545300B (zh) * 2012-07-09 2016-07-06 展晶科技(深圳)有限公司 发光二极管封装结构
JP2014096505A (ja) * 2012-11-09 2014-05-22 Sharp Corp バックライトおよびその製造方法
TWI523277B (zh) * 2013-07-12 2016-02-21 White light emitting diode module with ultraviolet light
JP2015046445A (ja) * 2013-08-27 2015-03-12 富士通株式会社 化合物半導体装置及びその製造方法
CN106322225B (zh) * 2015-06-16 2019-05-10 群创光电股份有限公司 显示装置的背光源
US9825206B2 (en) * 2016-02-25 2017-11-21 Toyoda Gosei, Co., Ltd. Light-emitting device
TWI646651B (zh) * 2017-01-26 2019-01-01 宏碁股份有限公司 發光二極體顯示器及其製造方法
TWI741799B (zh) * 2020-09-18 2021-10-01 葳天科技股份有限公司 發光裝置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4932078B2 (ja) * 2000-12-04 2012-05-16 日亜化学工業株式会社 発光装置及びその製造方法
JP3840940B2 (ja) * 2001-09-28 2006-11-01 株式会社日立製作所 画像表示装置
US7066623B2 (en) * 2003-12-19 2006-06-27 Soo Ghee Lee Method and apparatus for producing untainted white light using off-white light emitting diodes
KR100655894B1 (ko) * 2004-05-06 2006-12-08 서울옵토디바이스주식회사 색온도 및 연색성이 우수한 파장변환 발광장치
JP4534717B2 (ja) * 2004-10-29 2010-09-01 豊田合成株式会社 発光装置
KR20060061867A (ko) * 2004-12-02 2006-06-08 삼성전자주식회사 광 발생 장치 및 이를 갖는 표시 장치
JP2006352030A (ja) 2005-06-20 2006-12-28 Arumo Technos Kk 発光ダイオード
JP4989936B2 (ja) * 2006-07-27 2012-08-01 株式会社朝日ラバー 照明装置
KR100862446B1 (ko) 2007-01-26 2008-10-08 삼성전기주식회사 백색 ｌｅｄ 광원 모듈
JP5346448B2 (ja) 2007-06-07 2013-11-20 シャープ株式会社 発光装置およびそれを搭載したカメラ付き携帯電話
KR100891810B1 (ko) 2007-11-06 2009-04-07 삼성전기주식회사 백색 발광 소자
CN101482235B (zh) * 2009-01-22 2012-05-30 深圳市聚飞光电股份有限公司 色温可调整的高显色led灯及其制造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None

Also Published As

Publication number Publication date
US20110235363A1 (en) 2011-09-29
CN102201504A (zh) 2011-09-28
JP2011211196A (ja) 2011-10-20
KR100999809B1 (ko) 2010-12-08
TW201203504A (en) 2012-01-16
US8132934B2 (en) 2012-03-13

Similar Documents

Publication Publication Date Title
US8132934B2 (en) Light emitting device and light unit having the same
US10541235B2 (en) Light emitting device package
US10677417B2 (en) Package for light emitting device and method for packaging the same
US8309983B2 (en) Light emitting device package and lighting system having the same
US8278670B2 (en) Light emitting apparatus and display apparatus having the same
KR100901618B1 (ko) 발광 다이오드 패키지 및 제조방법
JP6299176B2 (ja) 発光装置およびその製造方法ならびにこの発光装置を備える照明装置
CN102157504B (zh) 发光二极管封装和具有发光二极管封装的灯单元
EP2551927A1 (en) Light emitting device package
US8344601B2 (en) Light emitting device
EP2445020B1 (en) Light emitting diode package structure
KR20120045539A (ko) 발광소자 패키지
KR101683888B1 (ko) 발광 장치 및 이를 구비한 표시 장치
JP5779220B2 (ja) 蛍光体及びこれを備えた発光素子
KR20170073353A (ko) 발광 소자 및 이를 구비한 조명 시스템
KR20170073350A (ko) 형광체 및 이를 구비한 발광 소자
KR102098318B1 (ko) 형광체 및 이를 구비한 발광 소자
TWI381544B (zh) 多波長發光二極體元件之製造方法
KR20120073929A (ko) 발광소자 패키지
CN101271938A (zh) 多波长发光二极管元件及多波长发光模块

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20110415

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20141001