EP2347456A1 - Composant semiconducteur optoélectronique - Google Patents

Composant semiconducteur optoélectronique

Info

Publication number
EP2347456A1
EP2347456A1 EP09796291A EP09796291A EP2347456A1 EP 2347456 A1 EP2347456 A1 EP 2347456A1 EP 09796291 A EP09796291 A EP 09796291A EP 09796291 A EP09796291 A EP 09796291A EP 2347456 A1 EP2347456 A1 EP 2347456A1
Authority
EP
European Patent Office
Prior art keywords
light
scattering
optoelectronic semiconductor
converter element
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09796291A
Other languages
German (de)
English (en)
Inventor
Ulrich Streppel
Moritz Engl
Michael Reich
Jörg Erich SORG
Thomas Zeiler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of EP2347456A1 publication Critical patent/EP2347456A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body

Definitions

  • An optoelectronic semiconductor component is specified.
  • An object to be solved is to specify an optoelectronic semiconductor component which appears in the switched-off operating state when viewing a light exit surface of the optoelectronic semiconductor component for an external viewer in accordance with a predefinable color impression.
  • the component comprises at least one radiation-emitting semiconductor chip.
  • the radiation-emitting semiconductor chip may, for example, be a luminescence diode chip.
  • the luminescence diode chip can be a luminescent or laser diode chip which emits radiation in the range from ultraviolet to infrared light.
  • the luminescence diode chip preferably emits light in the visible or ultraviolet region of the spectrum of the electromagnetic radiation.
  • the radiation-emitting semiconductor chip is at least one
  • Converter element downstream of the conversion of emitted from the semiconductor chip in operation electromagnetic radiation in the emission direction.
  • the converter element emits upon irradiation with ambient light - if this comprises a wavelength portion which is suitable for exciting a conversion substance in the converter material - colored light.
  • the converter element is arranged on or at a radiation exit surface of the semiconductor chip.
  • the conversion element converts light of one wavelength into light of a different wavelength. For example, the converter element partially converts blue light primarily emitted from the semiconductor chip into yellow light, which can then mix together with the blue light to form white light.
  • the converter element thus has the function of a light converter during operation of the semiconductor device.
  • Converter element may be applied to the semiconductor chip and thus be in direct contact with the semiconductor chip. For example, this can be achieved by adhering the converter element to the semiconductor chip or by means of a screen printing method. However, there is also the possibility that the converter element is only indirectly in contact with the semiconductor chip. This may mean that a gap is formed between the interface converter element / semiconductor chip and thus the converter element and the semiconductor chip do not touch each other. The gap may be filled with a gas, for example air.
  • the converter element may be formed with a silicone, an epoxy of a mixture of silicone and epoxy or a transparent ceramic, into which particles of a
  • the component has a light exit surface. Electromagnetic radiation emitted by the semiconductor chip is coupled out of the component, for example, by an optical element.
  • the optical element of the component then has a beam passage opening, via which the radiation is decoupled from the component.
  • the beam passage opening has an outer surface facing away from the semiconductor chip, which forms the light exit surface of the component.
  • the optical element may be a lens or even a simple cover plate.
  • the optical element is formed by a potting, which encloses or envelops the semiconductor chip.
  • the optoelectronic semiconductor component comprises a means for the diffuse scattering of light, which is set up to scatter ambient light incident on the component in an operating state of the component in such a way that the light exit surface of the component does not appear in the color of the converter element, for example yellow.
  • the light output surface does not appear colored, but white.
  • a body appears white when, for example, the entire solar spectrum is scattered.
  • the means for diffusely diffusing light scatters the ambient light to appear white after being scattered by the means for an external observer.
  • the means for the diffusive scattering of light it is possible for the means for the diffusive scattering of light to be formed from a single element. It is also possible that the means for diffusely scattering light from several
  • the component comprises at least one radiation-emitting semiconductor chip, at least one converter element downstream of the semiconductor chip for the conversion of electromagnetic radiation emitted by the semiconductor chip during operation, the converter element emitting colored light upon irradiation with ambient light.
  • the optoelectronic semiconductor component comprises a means for diffuse scattering of light. The means for the diffuse scattering of light is set up in order to scatter ambient light incident on the component in a switched-off operating state of the component in such a way that a light exit surface of the component appears white.
  • the optoelectronic semiconductor component described here is based, inter alia, on the knowledge that in the switched-off operating state of the component, the semiconductor device for an external viewer appears colored, if the described means for diffuse scattering of light is not present. In this case, the light output surface of the component appears colored due to the converter element.
  • the converter element re-emits colored light when irradiated with ambient light, since components which stimulate the converter element are also present in the ambient light. For example, the converter element converts incident blue light into yellow light.
  • the component thus appears in the switched-off operating state at its light output surface in a different color, as in the switched-on operating state.
  • the component described here makes use of the idea of selectively positioning a means for the diffuse scattering of light at at least one point in the beam path of the optoelectronic semiconductor component.
  • the beam path is the path traveled by the electromagnetic radiation emitted by the semiconductor chip until it is coupled out through the light exit surface of the component.
  • the introduced means for the diffuse scattering of light in the beam path causes from outside through the
  • Lichtauskoppel incident light is scattered before it falls on the converter element. Since the means for diffusely scattering light scatters the entire spectrum of the ambient incident light, this light appears white. Although some of the light can strike the converter element and is re-emitted in color, but this re-emitted light is also scattered when passing through the means for diffuse scattering of light and mixes with the scattered ambient light. Thus, an observer sees the colored light re-emitted from the converter element together with the light scattered white by the means for diffusely scattering light. Since light can only escape from the component via the light exit surface, the color impression is defined only by the light coming from the exit surface. The larger the ratio of scattered white to re-emitted colored light, the whiter is the overall impression of the light exit surface of the component for an external viewer.
  • the outer color impression of the light exit surface of the component can further be adjusted in a particularly advantageous manner simply by the means for the diffuse scattering of light comprising a plurality of components and the individual ones Components of the means for the diffuse scattering of light at different points of the component and in different concentrations can be attached.
  • the means for diffusely scattering light comprises a matrix material in which radiation-scattering particles (including diffuser particles) are introduced.
  • the matrix material is a material which is transparent to the electromagnetic radiation generated by the semiconductor chip in order to ensure the highest possible radiation extraction from the component during operation of the component.
  • the matrix material may be a transparent plastic material such as silicone, an epoxy or a mixture of silicone and epoxy.
  • the matrix material contains one of these materials. Radiation-scattering particles are introduced into the matrix material, which diffusely scatter radiation incident on the matrix material.
  • the radiation-scattering particles comprise at least particles of the materials silicon dioxide (SiO 2 ), ZrO 2 , TiO 2 and / or Al x O y.
  • the alumina may be Al 2 O 3 .
  • the radiation-scattering particles are distributed in the matrix material in such a way that the concentration of the radiation-scattering particles in the hardened matrix material is uniform.
  • the light reflected from the cured matrix material is isotropically reflected and scattered.
  • the concentration of the radiation-scattering particles in the matrix material is more than 6% by weight. It could be shown that from such a concentration of the radiation-scattering particles, the white color impression is generated for an external observer and the scattered white light superimposes the, for example yellow, re-emitted light colored by the converter.
  • the converter element and the means for diffusely scattering light are in direct contact with one another.
  • the means comprises diffusely scattering light around a light-scattering film. That is, along the beam exit direction of the
  • Semiconductor component follows the film directly on the converter element.
  • the film is glued to the converter element.
  • neither a gap nor an interruption forms at the interface converter / foil.
  • radiation-scattering particles for example particles of Al 2 O 3 , can be introduced into the material of the light-scattering film prior to curing.
  • the means for diffused scattering of light covers the converter element on all exposed outer surfaces of the converter element.
  • the means for diffusely diffusing light comprises a layer of a matrix material which is mixed with radiation-diffusing particles. After curing, the matrix material forms a layer which covers the converter element on all exposed outer surfaces.
  • Converter element re-emit colored light. In this way, the highest possible proportion of white in the reflected light is generated.
  • the means for diffusely scattering light comprises an optical element which forms a lens at least in places.
  • the matrix material of the means for diffusely scattering light mixed with radiation-scattering particles is formed with a silicone which is transparent to electromagnetic radiation.
  • a lens may form in the form of a condenser lens.
  • the cured lens material is formed lens-shaped only in the region of the light exit surface. The lens of the optoelectronic semiconductor component ensures efficient decoupling of the radiation coupled out of the component. By forming the means for diffusely diffusing light to a lens, a dual function is achieved. On the one hand, that improves
  • the means for diffusely scattering light comprises roughening a light passage surface of a light-transmissive body.
  • the translucent body may be a lens, a plate, a cover of the component, or the like.
  • the roughening is preferably a roughening according to the standard VDI 3400, in particular of the types N4 to N10.
  • the roughening has inter alia an average depth of 1 to 2 ⁇ m, preferably 1.5 ⁇ m.
  • the roughening of colored light re-emitted by the converter element diffuses diffusely
  • the roughening scatters incident ambient light in such a way that the light exit surface of the optoelectronic semiconductor component appears white.
  • the means for the diffuse scattering of light in addition to the roughening of the light passage area, to include a further diffusely scattering component which enhances the effect mentioned.
  • Semiconductor device comprises the means for diffusely scattering light microstructures.
  • the microstructures are planar honeycomb structures which are coated on the light output surface of the lens by means of a screen printing process
  • the microstructures may have a different shape and texture from the honeycomb structure and are therefore not defined in their structure.
  • the microstructures may also have mutually varying and / or randomly resulting configurations.
  • the layer thickness is preferably at least 10 ⁇ m.
  • the microstructures have a diffractive effect with respect to the electromagnetic radiation impinging on them. Furthermore, there is no defraction of the incident radiation through the microstructures. The microstructures therefore, for example, do not form diffraction gratings.
  • the means for diffusely scattering light comprises a light-scattering plate which laterally projects beyond the converter element.
  • the light-scattering plate is rigid.
  • the plate is formed with a radiation-scattering particle-confused matrix material that has cured to the plate.
  • the light-scattering plate may also be formed with a ceramic material. It is also conceivable that the side facing away from the semiconductor chip of the plate, to which the
  • the light-scattering plate and the converter element are in direct contact.
  • the light-scattering plate projects beyond the converter element laterally.
  • the plate in addition to the converter element additionally projects laterally beyond the semiconductor chip.
  • the light-scattering plate projects beyond the semiconductor chip by 200 ⁇ m to 500 ⁇ m, more preferably by 300 ⁇ m to 400 ⁇ m, for example by 350 ⁇ m.
  • the light-scattering plate preferably has a thickness of 100 ⁇ m to 1 mm, preferably of 300 ⁇ m to 800 ⁇ m, for example of 500 ⁇ m.
  • a thickness of 100 ⁇ m to 1 mm preferably of 300 ⁇ m to 800 ⁇ m, for example of 500 ⁇ m.
  • the means for diffusely scattering light comprises a film which is applied to an outer surface of a lens.
  • the outer surface is the side of the surface of the lens facing away from the semiconductor chip and forms the light exit surface.
  • the means for the diffuse scattering of light is applied, for example in the form of a thin film.
  • the film is attached by gluing on the lens.
  • the thin-layered film also contains radiation-scattering particles and thereby ensures a diffuse reflection of incident light
  • a method for producing an optoelectronic semiconductor component is specified.
  • a component described here can be produced. That is, all features disclosed in connection with the component are also disclosed for the method and vice versa.
  • a carrier element is first provided.
  • the carrier element may be, for example, a film.
  • a converter element on the support element educated.
  • the material of the converter element is, for example, unrolled onto the carrier element by means of the screen printing process.
  • the first template is removed from the carrier element.
  • the material for the converter element may be, for example, a layer of silicone or of a transparent ceramic in which converter particles are introduced.
  • a means for the diffuse scattering of light is applied as a second layer to all exposed outer surfaces of the converter element using a second stencil applied to the carrier element by means of a second screen printing process.
  • the means for diffusely scattering light covers the converter element on all exposed side surfaces and on the upper side facing away from the carrier element.
  • the material can be, for example, unrolled and then cured.
  • FIG. 1 Sectional views of embodiments of an optoelectronic device described here.
  • Figures 2a, 2b, 3a and 3b show individual
  • FIG. Ia is a schematic sectional view of an optoelectronic semiconductor device described here with a base body 13 consisting of a carrier 1 and a housing 2 mounted thereon. Within the housing 2, a semiconductor chip on the surface of the carrier 1 is applied.
  • the carrier 1 and the housing 2 may be formed with a plastic or a ceramic.
  • the carrier 1 is designed as a printed circuit board or a carrier frame (leadframe) of the component.
  • the semiconductor chip 3 is electrically conductively connected to the carrier 1.
  • the converter element 4 is applied, which converts the radiation emitted primarily by the semiconductor chip 3 in the switched-on state of the component into radiation of a different wavelength.
  • the converter element 4 is an optical CLC layer (chip-level conversion layer), which partially converts the blue light primarily emitted by the semiconductor chip 3 into yellow light. Next reemit that Conversion element 4 from the outside incoming ambient light and converts, for example, in the ambient light blue light containing yellow light.
  • the converter element 4 may be a layer formed with silicone or transparent ceramic, in which converter particles are introduced.
  • a light-scattering plate 51 is applied on the conversion element 4.
  • the material of the light-scattering plate 51 is silicone, which has been mixed with the radiation-scattering particles of alumina before curing to the plate.
  • the concentration of the aluminum oxide particles in the light scattering plate 51 is 6% by weight. With such a concentration, the clearest effects with respect to the external appearance of an external viewer when the device is turned off have been achieved.
  • the light-scattering plate 51 does not cover the side surfaces of the converter element 4.
  • the lateral extent of the light-scattering plate 51 is set larger than the lateral extent of the
  • the light-scattering plate 51 projects beyond not only the converter element 4 but also the semiconductor chip 3 in its lateral extent.
  • the light-scattering plate 51 extends laterally beyond the semiconductor chip 3 by the length B, which is at least 10% of the side length of the semiconductor chip 3.
  • the length B is 200 ⁇ m.
  • this has the advantage that as little ambient light as possible falls on the converter element 4 and therefore the light reflected out of the optoelectronic semiconductor component is predominantly white.
  • the figure Ia shows an optical element which is formed in the form of a lens 6 and fitted in the housing 2. The lens 6 ensures an efficient decoupling of the electromagnetic radiation reflected, scattered or emitted from the component. Only the
  • the light entrance surface 61 is the part of the outer surface of the lens 6 facing the semiconductor chip 3.
  • the light exit surface 62 is the part of the outer surface of the lens 6, which faces away from the semiconductor chip 3.
  • the lens 6 has a thickness D.
  • the thickness D is the maximum distance between the light entry surface 61 and the light exit surface 62 in the direction perpendicular to the surface of the carrier 1 facing the lens 6.
  • the radiation component 14B which does not strike the light entry surface 61 is not decoupled from the component.
  • the lens 6 is formed in the present embodiment of a silicone and transparent to electromagnetic radiation.
  • the lens 6 contains no radiation-scattering particles.
  • the electromagnetic radiation emitted into the component and emitted by the semiconductor chip 3 during operation is decoupled, since both the carrier 1 and the housing 2 are radiopaque.
  • FIG. 1 b shows an optoelectronic semiconductor component in which the means for diffusely scattering light 5 is the lens 6.
  • the material of the lens in the present embodiment, a silicone, with radiation-scattering particles of alumina in a concentration of 0.2 to 1% by weight, preferably from 0.4 to 0.8, in this case of 0.6 Gew%, blended, wherein the lens 6 has a thickness D of 1.5 mm.
  • FIG. 1 c shows a light-scattering plate 51 applied to the converter element 4.
  • the light entry surface 61 of the lens 6 is roughened.
  • the average depth of the roughening 7 is 1 to 2 microns, in this case 1.5 microns.
  • the means for diffused scattering of light 5 comprises in FIG. 1c both the light-scattering plate 51 and the roughening 7 and thus consists of two components for the diffuse scattering of light.
  • FIG. 1 d shows a further possibility of combining the individual components of the means for diffusely scattering light 5.
  • aluminum oxide particles having a concentration of 0.2 to 1% by weight, preferably 0.4 to 0.8% by weight, are present -%, in the present case of 0.6 wt% introduced into the material of the lens 6, wherein the thickness D of the lens 6 is 1.5 mm.
  • the means for the diffuse scattering of light 5 additionally comprises the roughening 7 on the radiation entrance surface 61 of the lens 6. Both components increase the diffusely scattering effect on the incident ambient light by such a combination.
  • Figure Ie shows a lens 6 made of a clear silicone in which the light exit surface 62 was overmolded with a light scattering material by using a two-component injection molding.
  • the light-scattering material forms a layer around the
  • the diffuse material is again a Silicone, which was mixed with radiation-scattering particles of alumina.
  • concentration of the aluminum oxide particles in the present exemplary embodiment is 0.5% by weight, the layer thickness ideally being 50 to 100 ⁇ m, in the present case 75 ⁇ m.
  • a layer of microstructures 52 is applied to the light exit surface 62 of the lens 6, which assumes the physical role of the means for the diffuse scattering of light 5.
  • a layer of honeycomb-structured planar microstructures 52 is applied as a layer on the light exit surface 62 of the lens 6 by means of screen printing, a thermal transfer printing method or UV replication.
  • the layer thickness in the present case is 50 ⁇ m.
  • FIG. 1 g shows an optoelectronic semiconductor component in which the means 5 for scattering light 5 in the form of a film 53 has been glued onto the light exit surface 62 of the lens 6.
  • the film 53 may be a thin one
  • the film 53 has a thickness of 30 to 500 ⁇ m. In the present embodiment, the film 53 was 250 microns thick. In the film 53, particles of alumina are incorporated in a concentration of 0.5 to 1% by weight, in the present case of 0.75% by weight.
  • the film 53 serves as a means for diffuse scattering of light.
  • FIG. 1 h shows an optoelectronic semiconductor component in which the light exit surface 62 of the lens 6 is roughened and the roughening 7 represents the means for the diffuse scattering of light 5.
  • the roughening 7 preferably has an average depth of 1 to 2 ⁇ m, preferably 1.5 ⁇ m.
  • FIG. 2a shows a foil which serves as carrier element 9 for the production process.
  • a first template 8 is applied on the carrier element 9, a first template 8 is applied.
  • a printing means in this example is a doctor blade 12, the material of the converter element 4 is introduced into the openings of the template 8.
  • the material of the converter element 4 may be a layer of silicon or of a ceramic material into which converter particles are introduced.
  • Converter element 4 by screen printing on the template 8> and optionally curing the material, the template 8 is removed from the support member 9 and the converter element 4.
  • the converter element 4 forms a first layer on the carrier element 9.
  • a second stencil 10 is applied to the carrier element 9 and, by means of a second screen printing process using the doctor blade 12, a means for diffusely scattering light onto the second stencil 10 as a second layer 11 is unrolled.
  • the second layer 11 covers the converter element 4 on all exposed outer surfaces and is in direct contact with the converter element 4, see FIG. 2b.
  • Template 10 is removed both from the carrier element 9 and from the composite consisting of converter element 4 and the second layer 11.
  • the second layer 11 may be both a second converter layer and a layer provided with radiation-scattering particles.
  • this is a converter layer, which from the
  • Converter element 4 partially converted light into light of a different color.
  • the process can be repeated and in a third or further step, the means for diffused scattering of light 5 is applied to the second converter layer IIa.
  • a viscous agent can be dropped onto the stencils 8 and 10, respectively.
  • the material is subsequently distributed on the surface of the carrier element 9 and can then harden.
  • the carrier element 9 is removed from the composite consisting of converter element 4 and the second layer 11, see FIGS. 3a and 3b.
  • the composite is subsequently applied to the radiation-emitting semiconductor chip 3.
  • the application can be done by gluing, soldering or platelet transfer.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un composant semiconducteur optoélectronique comprenant : - au moins une puce de semiconducteur (3) émettant un rayonnement ; - au moins un élément convertisseur (4) placé en aval de la puce de semiconducteur (3) et destiné en service à convertir le rayonnement électromagnétique émis par la puce de semiconducteur (3), l'élément convertisseur (4) émettant une lumière de couleur lorsqu'il reçoit la lumière ambiante ; - un moyen destiné à diffuser de la lumière (5) qui est conçu, dans un état d'arrêt du composant, pour diffuser la lumière ambiante parvenant sur le composant de manière à ce que la surface de sortie de lumière (62) du composant apparaisse blanche.
EP09796291A 2008-10-30 2009-10-27 Composant semiconducteur optoélectronique Withdrawn EP2347456A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008054029A DE102008054029A1 (de) 2008-10-30 2008-10-30 Optoelektronisches Halbleiterbauteil
PCT/DE2009/001504 WO2010048935A1 (fr) 2008-10-30 2009-10-27 Composant semiconducteur optoélectronique

Publications (1)

Publication Number Publication Date
EP2347456A1 true EP2347456A1 (fr) 2011-07-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP09796291A Withdrawn EP2347456A1 (fr) 2008-10-30 2009-10-27 Composant semiconducteur optoélectronique

Country Status (7)

Country Link
US (1) US20110266576A1 (fr)
EP (1) EP2347456A1 (fr)
KR (1) KR101628420B1 (fr)
CN (1) CN102272955B (fr)
DE (1) DE102008054029A1 (fr)
TW (1) TWI447968B (fr)
WO (1) WO2010048935A1 (fr)

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CN102272955A (zh) 2011-12-07
WO2010048935A1 (fr) 2010-05-06
TW201025682A (en) 2010-07-01
US20110266576A1 (en) 2011-11-03
DE102008054029A1 (de) 2010-05-06
CN102272955B (zh) 2016-05-11
TWI447968B (zh) 2014-08-01
KR20110079769A (ko) 2011-07-07
KR101628420B1 (ko) 2016-06-08

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