WO2014019988A1 - Composant à semi-conducteur optoélectronique et procédé pour le fabriquer - Google Patents

Composant à semi-conducteur optoélectronique et procédé pour le fabriquer Download PDF

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Publication number
WO2014019988A1
WO2014019988A1 PCT/EP2013/065916 EP2013065916W WO2014019988A1 WO 2014019988 A1 WO2014019988 A1 WO 2014019988A1 EP 2013065916 W EP2013065916 W EP 2013065916W WO 2014019988 A1 WO2014019988 A1 WO 2014019988A1
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WO
WIPO (PCT)
Prior art keywords
potting compound
radiation
nanoparticles
semiconductor chip
refractive index
Prior art date
Application number
PCT/EP2013/065916
Other languages
German (de)
English (en)
Inventor
Ion Stoll
Kathy SCHMIDTKE
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2014019988A1 publication Critical patent/WO2014019988A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package

Definitions

  • the semiconductor component has at least one semiconductor chip.
  • the semiconductor device may comprise two, three or more semiconductor chips.
  • Semiconductor chip is preferably a based on a III-V semiconductor material semiconductor chip.
  • the semiconductor chip is preferably a light-emitting diode (LED) chip.
  • the semiconductor chip is for radiation electromagnetic radiation, in particular of light
  • the semiconductor chip preferably emits colored, multicolored or white light.
  • the semiconductor chip can also radiate ultraviolet (UV) radiation. All semiconductor chips of the semiconductor component can be identical in construction. Alternatively, it is possible that the
  • semiconductor chips which are preferably designed for emission in different spectral ranges.
  • the semiconductor device further comprises a potting compound.
  • the potting compound surrounds the at least one semiconductor chip on its exposed outer surface at least partially, preferably completely.
  • the potting compound is in
  • Beam path of the emitted radiation arranged.
  • Potting compound has a radiation-transmissive or optically transparent material, such as a silicone and / or epoxy material, on.
  • the potting compound may be a solvent, e.g. Acetone, benzene or tetramethylsilane, or residues of a solvent.
  • the solvent is in this case in
  • the potting compound may also be free of solvent.
  • the addition of a solvent can have a positive effect on certain process properties of the potting compound.
  • an addition of solvent increases the flowability of the potting compound.
  • Potting compound for example on subsequently arranged optical elements, can be improved by adding a solvent.
  • the potting compound further comprises a filler.
  • Filler is preferably inorganic.
  • the filler is a metal oxide.
  • the filler may be, for example, zirconia (ZrO 2) or titania
  • the inorganic filler is formed and arranged in the radiation-transmissive material such that the
  • Total refractive index of the potting compound is not constant but dependent on the location in the potting compound. There are imaginary curves in the potting along which the total refractive index gradually, for example, gradually changes. For example, the total refractive index along certain imaginary curves present in the potting compound
  • the change in the total refractive index can be particularly quasi-continuous.
  • the changes in the total refractive index can be particularly quasi-continuous.
  • Total refractive index by about 0.015 within a range of about 0.1 mm in the potting compound.
  • the total refractive index decreases within a range of 0.1 mm in the potting compound by about 0.015.
  • the range of about 0.1 mm is in the vertical direction so starting from the semiconductor chip in the direction of a decoupling surface of the
  • At interfaces of two materials e.g., at the interface between semiconductor die and potting compound or between
  • Semiconductor device have the radiation-transmissive
  • the refractive index of the inorganic filler is higher than the refractive index of the inorganic filler
  • the refractive index of the inorganic filler may be twice as high as the refractive index of the radiation-transmissive one
  • the refractive index of the inorganic filler is preferably about as high as the refractive index of the inorganic filler
  • the inorganic compound is silicon.
  • the inorganic compound is silicon.
  • Filler has a refractive index between 1.5 and 3.0, with the limits included.
  • Ii is the refractive index of the filler at 2.0.
  • the refractive index of the radiation-transmissive material is preferably approximately as high as the refractive index of the air surrounding the component. Preferably, this has
  • the radiation-transmissive material has a refractive index between 1.0 and 2.0, with the limits included.
  • the refractive index of the radiation-transmissive material is preferably between 1.4 and 1.6, for example between 1.41 and 1.54.
  • the total refractive index of the potting compound results from the combination of the refractive index of the radiation-transmissive material and the inorganic filler.
  • Total refractive index varies depending on the location of the
  • the total refractive index of the potting compound is between 1.0 and 3.0, with the limits included. According to at least one embodiment of the
  • the device has at least one outcoupling surface.
  • the decoupling surface adjoins the air surrounding the component.
  • the radiation generated by the component is emitted to the environment.
  • the decoupling surface may be on a semiconductor chip
  • the side surfaces of the casting compound can each represent coupling surfaces of the component.
  • the inorganic filler is formed and arranged in the radiation-transmissive material such that the
  • Semiconductor chip towards the decoupling surface targeted gradually or gradually reduced.
  • a layer of potting compound which directly to the
  • Potting compound which is directly adjacent to the semiconductor chip, has a higher refractive index than the layer of
  • Potting compound which is formed by the decoupling surface.
  • the decoupling surface is free of the
  • the inorganic filler comprises a multiplicity of nanoparticles.
  • Nanoparticles are generally particles with one
  • the nanoparticles have a size such that a scattering of the radiation emitted by the semiconductor chip through the nanoparticles is substantially completely prevented.
  • the nanoparticles preferably have a diameter of less than or equal to 40 nm.
  • the nanoparticles particularly preferably have a diameter of 30 nm to 40 nm, for example 35 nm.
  • the nanoparticles have a very small dimension compared to a wavelength of the radiation emitted by the semiconductor chip. A scatter of emitted visible
  • Filler does not substantially reduce a radiation intensity of the radiation generated by the device.
  • the radiation passes substantially without scattering from the semiconductor chip to the decoupling surface.
  • the nanoparticles also have only a very low degree of absorption.
  • the nanoparticles have no absorption in the visible wavelength range. This contributes to increasing the light extraction and thus to
  • a density of the nanoparticles increases starting from the semiconductor chip
  • Potting compound may for example be between 40 and 100% by weight.
  • the proportion of nanoparticles in the layer adjacent to the semiconductor chip is
  • Potting compound at least 50% by weight, for example 60% by weight or 70% by weight.
  • the proportion of nanoparticles in a layer of the potting compound adjoining the ambient air, that is to say on the layer of the potting compound formed by the coupling-out surface, may for example be between 0 and 10% by weight,
  • the proportion of nanoparticles in the adjacent to the ambient air for example, 5% by weight.
  • the proportion of nanoparticles in the adjacent to the ambient air for example, 5% by weight.
  • Radiation-permeable material can be the
  • Total refractive index of the casting compound can be adjusted specifically and gradually.
  • the weighting of the casting compound can be adjusted specifically and gradually.
  • Total refractive index can be adjusted to the refractive index of the respective materials of the boundary layer. Differences in the refractive indices of the materials at interfaces can thus be reduced or even avoided.
  • the nanoparticles are surface-functionalized. A functionalization of
  • Nanoparticles can be made, for example, by interaction with the abovementioned solvent.
  • the nanoparticles can be functionalized with silane bearing polymerizable groups (vinyltriethoxysilane).
  • the functionalization can also with the help of 3-glycidoxypropyltrimethoxysilane or
  • the surface functionalization prevents the nanoparticles from aggregating through van der Waals interaction, which would lead to a scattering of the emitted radiation at the aggregates and thus to a loss of brightness. Furthermore, through the Surface functionalization the formability of
  • the nanoparticles carry charges on their surface.
  • the number of charge carriers can be designed differently, whereby the distribution of the nanoparticles in the radiation-transmissive material, for example by applying an electric field, is facilitated.
  • the component has a wavelength conversion element.
  • Wavelength conversion element is at least partially arranged in the beam path of the radiation emitted by the semiconductor chip.
  • the wavelength conversion element is preferably arranged on a surface of the semiconductor chip facing the potting compound.
  • the wavelength conversion element is arranged directly on the semiconductor chip.
  • the wavelength conversion element is designed to convert the radiation emitted by the semiconductor chip partially or completely into a further radiation having a different wavelength from the emitted radiation.
  • a semiconductor chip emitting in the blue region of the spectrum for example, an LED chip comprising InGaN, and a wavelength conversion element having a mixture of green and red
  • emitting converter materials are used to provide a white semiconductor emitting device.
  • the semiconductor component produced thereby preferably corresponds to the semiconductor component described here. All features disclosed for the semiconductor device are thus also disclosed for the method and vice versa.
  • the method comprises the following steps:
  • the semiconductor chip is a semiconductor chip.
  • the radiation-transmissive or optically transparent material is provided.
  • Radiation-permeable material serves as a base material for the formation of the potting compound.
  • the inorganic filler is introduced into the radiation-permeable material, in particular mixed with the radiation-transmissive material.
  • the nanoparticles can be mixed with a solvent, for example.
  • the mixture of solvent and nanoparticles is then introduced into the radiation-transmissive material.
  • the inorganic filler comprises, as described above, a plurality of nanoparticles.
  • the number of nanoparticles is preferably adapted to a desired gradient range of the total refractive index of the potting compound.
  • inorganic filler is initially homogeneous in the
  • the distributed radiation permeable material in particular mixed with the radiation-transmissive material.
  • a particularly effective homogeneous distribution of the nanoparticles in the radiation-transmissive material can be achieved.
  • the potting compound is around the
  • the potting compound is arranged around the semiconductor chip such that the semiconductor chip
  • the semiconductor chip is protected against external influences and thus damage.
  • the inorganic filler is distributed in the radiation-transmissive material.
  • the filler is distributed in such a way that the concentration or the density of the filler in the radiation-permeable material decreases starting from the semiconductor chip to the outcoupling surface. In this way, the potting compound has a targeted gradual
  • adjusted total refractive index which is composed of the refractive index of the filler and the refractive index of the radiation-transmissive material.
  • the total refractive index of the potting compound in a layer adjacent to the semiconductor chip is higher than the total refractive index of one to the ambient air
  • the total refractive index of the potting compound is gradually increased by reducing the concentration of
  • the distribution of the inorganic filler is carried out, for example, by centrifuging the inorganic filler
  • the centrifuging leads to an accumulation of the filler in the lower layers of the potting compound, ie the layers which are directly adjacent to the semiconductor chip.
  • the filler within the radiation-transmissive material migrates toward the semiconductor chip, so that the concentration of filler in layers of the
  • Potting material which are located in the immediate vicinity of the semiconductor chip is greater than in layers of the potting compound, which are further removed from the semiconductor chip (upper layers of the potting compound).
  • Radiation-permeable material can also through
  • Total refractive index of the casting compound can be achieved.
  • Radiation-permeable material with a solvent may be mixed in an additional
  • the solvent is at least partially removed from the potting compound again, for example by evaporation, by means of heat or negative pressure.
  • the solvent may also be completely in the
  • the semiconductor component produced thereby preferably corresponds to the semiconductor component described above. All features disclosed for the semiconductor device are thus also disclosed for the method and vice versa.
  • the method comprises the following steps:
  • the radiation-transmissive or optically transparent material is provided for forming the potting compound.
  • the inorganic filler is introduced into the radiation-transmissive material.
  • the inorganic filler comprises a plurality of nanoparticles as described above. Alternatively, as described above, the nanoparticles may be pre-loaded into the
  • Potting compound arranged around the semiconductor chip By the first layer of the semiconductor chip is preferably already completely encapsulated by potting compound. In a next step at least one more
  • a previously arranged layer of potting compound has a higher concentration or density of inorganic filler than any other subsequently arranged
  • Potting compound which directly adjacent to the semiconductor chip is higher than in any other layer of the potting compound.
  • Potting compound which is directly adjacent to the ambient air, so the top layer of the potting compound, is lower than in any other layer of the potting compound.
  • the potting compound has a targeted gradually adjusted total refractive index. Differences in the refractive indices of the different materials can thus be reduced or avoided altogether. Scattering at the interfaces of different materials due to large differences in the refractive indices of the materials are thus avoided and the efficiency and light extraction of the semiconductor device is thereby increased.
  • the optoelectronic component and the method with reference to exemplary embodiments and the
  • FIG. 1 shows a cross section of an optoelectronic semiconductor component.
  • FIG. 2 shows the optoelectronic semiconductor component from FIG. 1 prior to distributing the inorganic filler in the radiation-transmissive material.
  • FIG. 3 shows a further view of the optoelectronic semiconductor component from FIG. 1 before distributing the inorganic filler in the radiation-transmissive one
  • FIG. 1 shows an optoelectronic semiconductor component 1 which has a semiconductor chip 2.
  • the semiconductor device 1 may also be two, three or more
  • Semiconductor chips 2 have.
  • the semiconductor chip 2 radiates visible radiation or light.
  • the semiconductor chip 2 emits colored, multicolored or white light.
  • the semiconductor chip 2 emits radiation in the blue region of the spectrum.
  • the semiconductor chip 2 is preferably an LED chip.
  • the semiconductor chip 2 has a refractive index.
  • the refractive index of the semiconductor chip 2 is greater than 2.0.
  • the refractive index of the semiconductor chip is between 2.5 and 3.5.
  • the semiconductor chip 2 is arranged in a housing 10.
  • the housing 10 is preferably formed from a plastic.
  • the housing 10 may be formed as a reflector for
  • the inner walls of the housing 10 may have a reflective surface.
  • the inner walls are coated with reflective pigments such as TiO 2 or with metal (not explicitly shown).
  • the semiconductor chip 2 is arranged on a support 9.
  • the carrier 9 is connected to the housing 10.
  • a wavelength conversion element 8 is arranged on a side facing away from the carrier 9 surface of the semiconductor chip 2.
  • Wavelength conversion element 8 is arranged in the beam path of the radiation emitted by the semiconductor chip 2.
  • Wavelength conversion element 8 may be formed by a printed layer of a phosphor paste in a silicone.
  • the wavelength conversion element 8 may comprise a ceramic material.
  • the wavelength conversion element 8 converts the
  • Wavelength conversion element 8 a mixture of green and red emitting converter materials to a white-emitting semiconductor device 1
  • the semiconductor chip 2 is completely surrounded by a potting compound 3.
  • the potting compound 3 completely fills the housing 10.
  • the potting compound 3 protects the
  • the semiconductor device 1 has a decoupling surface 7. At the decoupling 7 of the
  • the decoupling surface 7 is formed by a layer of potting compound 3, which is directly adjacent to the surrounding the semiconductor device 1 air.
  • the potting compound 3 has a radiation-transmissive or optically transparent material 4.
  • Radiation-permeable material 4 may comprise a silicone potting material.
  • the radiation-transparent material 4 an epoxy potting material. Both silicone and epoxy potting materials have high optical transparency and high material stability.
  • the radiation-transmissive material 4 has a
  • the refractive index is smaller than the refractive index of the semiconductor chip 2.
  • the refractive index is higher than or equal to the refractive index of the air surrounding the semiconductor device 1.
  • the radiation-transmissive material 4 is preferably between 1.0 and 2.0, with the limits included.
  • the refractive index of the radiation-transmissive material 4 is preferably between 1.4 and 1.6, for example between 1.41 and 1.54.
  • the potting compound 3 may further comprise a solvent or residues of a solvent (not explicitly shown).
  • the solvent has little or no effect on an overall refractive index of the potting compound 3 described below.
  • the potting compound 3 also has an inorganic filler 5.
  • the inorganic filler consists of a large number of nanoparticles.
  • the nanoparticles may comprise, for example, SiO 2, ZrO 2 or TiO 2.
  • the nanoparticles are arranged in the radiation-permeable material 4.
  • the nanoparticles are in the
  • the distribution of the nanoparticles in the radiation-transmissive material 4 is not random and also not homogeneous. Rather, that is
  • Potting compound 3 (upper layers of potting compound 3).
  • the proportion of nanoparticles in the potting compound 3 is in the layer of the potting compound 3, directly to the
  • Semiconductor chip 2 is adjacent at 40 to 100% by weight
  • a layer of the potting compound 3 which is arranged downstream of the layer in the direction of the outcoupling surface 7, which layer directly adjoins the semiconductor chip 2, has a smaller concentration of nanoparticles than the one directly adjacent to the semiconductor chip 2 Layer.
  • the layer of potting compound 3 arranged downstream in the direction of the outcoupling surface 7 has a proportion of nanoparticles of 35 or 40% by weight. The concentration of nanoparticles decreases
  • Decoupling surface 7 of the semiconductor device 2 is formed.
  • Potting compound 3 which is directly adjacent to the ambient air at less than 1% by weight, preferably at 0% by weight.
  • the nanoparticles carry charges on their surface.
  • the number of charge carriers can be adjusted during the synthesis or functionalization, or subsequently, for example by adjusting the pH or the addition of a salt. Different nanoparticles can have different numbers of charge carriers, resulting in a targeted distribution of the nanoparticles in the
  • radiation-permeable material 4 may contribute, as will be described in detail later.
  • the nanoparticles have a diameter of less than or equal to 40 nm.
  • the nanoparticles preferably have a diameter of 30 nm to 40 nm, for example 35 nm, 36 nm or 37 nm.
  • the nanoparticles have, compared to the wavelength of the emitted radiation from the semiconductor chip 2, a very small extension. As a result, a scattering of the radiation emitted by the semiconductor chip 2 by the
  • the nanoparticles have a very low degree of absorption.
  • the nanoparticles preferably have no absorption in the visible wavelength range. This also contributes to increasing the light output and thus to the efficiency of the semiconductor device.
  • the nanoparticles have a surface functionalization.
  • the surface functionalization can be achieved, for example, by the nanoparticles interacting with the abovementioned solvent.
  • the nanoparticles may, for example, be functionalized with silane which carries polymerizable groups (vinyltriethoxysilane).
  • silane is particularly well suited as surface functionalization for the use of nanoparticles in silicone as
  • Aminopropyltrimethoxysilane take place. 3-glycidoxypropyltrimethoxysilane or
  • Aminopropyltrimethoxysilane is particularly well suited as surface functionalization for the use of
  • the surface functionalization prevents the nanoparticles from becoming spatially close enough to aggregate. The formation of aggregates would increase to an
  • the nanoparticles have a refractive index.
  • Refractive index is less than or equal to the refractive index of the semiconductor chip 2.
  • the refractive index is higher than that
  • the refractive index of the nanoparticles is
  • the nanoparticles have a refractive index greater than 2.0.
  • the potting compound 3 has an overall refractive index.
  • the total refractive index is made up of the
  • the total refractive index has a
  • Potting compound 3 is between 1.0 and 3.0, with the limits included.
  • the total refractive index of the potting compound 3 is increased locally by the high refractive index of the nanoparticles.
  • the potting material 3 has a targeted gradually adjusted by the targeted distribution of the nanoparticles in the radiation-transparent material 4
  • the total refractive index of the potting compound 3 is particularly high there.
  • Semiconductor chip 2 adjacent layer of the potting compound 3 equal to the refractive index of the semiconductor chip.
  • the total refractive index of the potting compound 3 In the adjoining layers of the potting compound 3, in particular in the located between the bottom layer and the top layer of the potting compound 3 layers, the total refractive index of the potting compound 3 to
  • Potting compound 3 which is directly adjacent to the ambient air (top layer of the potting compound 3), is the
  • Total refractive index of the potting compound 3 there particularly low is the total refractive index of the potting compound 3 there particularly low.
  • the total refractive index is the
  • Layer of potting compound 3 equal to the refractive index of the ambient air.
  • the optoelectronic component 1 described above is produced as follows (see FIGS. 2 and 3): First, the above-described housing 10 and the carrier 9 are provided. Furthermore, the above-described semiconductor chip 2 is provided. The semiconductor chip 2 is arranged on the carrier 9 and in the housing 10.
  • the wavelength conversion element 8 is placed on the
  • Semiconductor chip 2 applied. This can be done for example by electrophoresis. Alternatively, the
  • Wavelength conversion element 8 but also from a
  • printed layer can be formed from a phosphor paste in a silicone.
  • the inorganic filler 5 which comprises a plurality of nanoparticles, in the
  • the radiation-permeable material 4 introduced.
  • the radiation-transmissive material 4 and the radiation-transmissive material 4 are the radiation-transmissive material 4 and the radiation-transmissive material 4
  • the nanoparticles are initially distributed homogeneously in the radiation-permeable material 4 (FIGS. 2 and 3). Radiation-permeable material 4 and
  • Nanoparticles together form the potting compound 3.
  • the nanoparticles can be introduced into a solvent before being added to the radiation-pervious material 4.
  • the nanoparticles are in the
  • Solvent homogeneously distributed The solvent can be used, for example, for surface functionalization of
  • Nanoparticles be formed. In other words, through the interaction with the solvent one can
  • the mixture is made Solvent and nanoparticles the radiation-permeable material 4 attached.
  • the solvent has the advantage that it effectively prevents aggregation of the nanoparticles in the radiation-transmissive material 4. Rather, the mixture is off
  • the solvent improves the flowability of the
  • be attached to the decoupling surface of the device 1, can be improved by the solvent.
  • the potting compound 3 is arranged in the housing 10 around the semiconductor chip 2 around. After placing the potting compound 3 in the housing 10 is the
  • the nanoparticles are distributed in the radiation-transmissive material 4.
  • the distribution takes place in such a way that the concentration of the nanoparticles in the radiation-permeable material 4, starting from the
  • the potting compound 3 after the completion of the semiconductor device 1 as described above on a targeted gradually adjusted total refractive index.
  • the distribution of the nanoparticles can take place, for example, by centrifuging the potting compound 3.
  • the nanoparticles within the radiation-transmissive material 4 are preferably moved in the direction of the semiconductor chip 2. This leads to an increase in the total refractive index of the potting compound 3 in the lower
  • the semiconductor device 1 is inserted between two electrodes 11 and 12.
  • a voltage is applied to the electrodes 11, 12 so that the electric field 13 is generated. Due to the charges on the surface of the nanoparticles they move in the electric field 13.
  • the nanoparticles migrate along the field lines of the electric field 13 in the direction of the semiconductor chip 2. Nanoparticles, which are already in the lower layers of the potting compound 3 migrate while, until they are in the layer of potting compound 3, which is directly adjacent to the semiconductor chip 2.
  • the duration of the applied electric field 13 is chosen so that the nanoparticles, which are located in the upper layers, have not yet reached the adjacent to the semiconductor chip 2 layer. This leads to a
  • Concentration of the nanoparticles starting from the semiconductor chip 2 starting to the decoupling surface 7 gradually decreases. In this way, an increase in the total refractive index of the potting compound 3 in the lower layers is achieved, while the upper layers have a lower overall refractive index. The change in the total refractive index is gradual.
  • the nanoparticles can also have the nanoparticles. As described above, the nanoparticles can also have the nanoparticles.
  • Number of carriers on the surface of the nanoparticles migrate faster with a higher number of carriers and thus accumulate in the lower layers of the potting compound 3.
  • concentration of charge carriers on the surface By selecting the concentration of charge carriers on the surface, the subsequent distribution of the nanoparticles can thus be controlled in a targeted manner.
  • the potting compound 2 is cured thermally or UV induced. If the nanoparticles were mixed with a solvent or after mixing nanoparticles and
  • the solvent can be completely evaporated in a final process step.
  • the solvent may also be at least partially removed by heat or vacuum.
  • the solvent may also be at least partially removed by heat or vacuum.
  • the above-described housing 10 and the carrier 9 are provided. Furthermore, the above-described semiconductor chip 2 is provided. The semiconductor chip 2 is arranged on the carrier 9 and in the housing 10 and the wavelength conversion element 8 is applied to the semiconductor chip 2 as described above.
  • the inorganic filler 5 comprising a plurality of nanoparticles is incorporated in the
  • the solvent may also remain completely in the potting compound, as described above.
  • Arranging the first layer is the semiconductor chip 2
  • potting compound 3 is arranged around the semiconductor chip 2.
  • the further layer is applied to the first layer of potting compound 3 arranged above.
  • Housing 10 is completely filled by the potting material 3.
  • a previously arranged layer of potting compound 3 in this case has a higher concentration of nanoparticles than any further subsequently arranged layer of
  • Semiconductor chip 2 is adjacent (bottom layer of potting compound 3) is therefore higher than in any other layer of the
  • Nanoparticles in this layer at least 40% by weight.
  • the proportion of nanoparticles in this layer is 0% by weight.
  • the change in concentration is gradual. Due to the targeted distribution of
  • the potting compound 3 a targeted gradually adjusted total refractive index.
  • the potting compound 2 is again cured thermally or UV induced.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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Abstract

L'invention concerne un composant à semi-conducteur optoélectronique (1) qui comprend au moins une puce de semi-conducteur (2) servant à émettre un rayonnement électromagnétique, en particulier de la lumière, et un surmoulage (3) entourant la ou les puces de semi-conducteur (2). Le surmoulage (3) est disposé dans le trajet du rayonnement émis. Le surmoulage (3) comprend un matériau (4) perméable au rayonnement et une charge inorganique (5). La charge inorganique (5) est configurée et disposé dans le matériau (4) perméable au rayonnement de telle façon que le surmoulage (3) présente un indice de réfraction global ajusté avec une gradation ciblée. L'invention concerne en outre un procédé de fabrication d'un composant à semi-conducteur optoélectronique (1).
PCT/EP2013/065916 2012-07-31 2013-07-29 Composant à semi-conducteur optoélectronique et procédé pour le fabriquer WO2014019988A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE201210106984 DE102012106984A1 (de) 2012-07-31 2012-07-31 Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102012106984.0 2012-07-31

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WO2014019988A1 true WO2014019988A1 (fr) 2014-02-06

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Families Citing this family (5)

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Publication number Priority date Publication date Assignee Title
DE102017117651A1 (de) * 2017-08-03 2019-02-07 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102019100646A1 (de) * 2019-01-11 2020-07-16 Osram Opto Semiconductors Gmbh Strahlungsemittierendes bauelement und verfahren zur herstellung eines strahlungsemittierenden bauelements
DE102021113095A1 (de) 2021-05-20 2022-11-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines optoelektronisches Bauelements und optoelektronisches Bauelement
DE102021118490A1 (de) * 2021-07-16 2023-01-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung einer vielzahl von licht emittierenden bauelementen und bauteil
DE102022104625A1 (de) 2022-02-25 2023-08-31 Vermes Microdispensing GmbH Funktionselement mit einem Funktionsstoff

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