EP2298032A4 - Structure électroconductrice pour un dispositif émetteur optique - Google Patents

Structure électroconductrice pour un dispositif émetteur optique

Info

Publication number
EP2298032A4
EP2298032A4 EP08741968A EP08741968A EP2298032A4 EP 2298032 A4 EP2298032 A4 EP 2298032A4 EP 08741968 A EP08741968 A EP 08741968A EP 08741968 A EP08741968 A EP 08741968A EP 2298032 A4 EP2298032 A4 EP 2298032A4
Authority
EP
European Patent Office
Prior art keywords
electrically conducting
conducting structure
light transmissible
transmissible device
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08741968A
Other languages
German (de)
English (en)
Other versions
EP2298032A1 (fr
Inventor
Furong Zhu
Ging Meng Ng
Pooi Kwan Liew
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agency for Science Technology and Research Singapore
Original Assignee
Agency for Science Technology and Research Singapore
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency for Science Technology and Research Singapore filed Critical Agency for Science Technology and Research Singapore
Publication of EP2298032A1 publication Critical patent/EP2298032A1/fr
Publication of EP2298032A4 publication Critical patent/EP2298032A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3618—Coatings of type glass/inorganic compound/other inorganic layers, at least one layer being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022491—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of a thin transparent metal layer, e.g. gold
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/90—Other aspects of coatings
    • C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Surface Treatment Of Glass (AREA)
EP08741968A 2008-05-06 2008-05-06 Structure électroconductrice pour un dispositif émetteur optique Withdrawn EP2298032A4 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/SG2008/000168 WO2009136863A1 (fr) 2008-05-06 2008-05-06 Structure électroconductrice pour un dispositif émetteur optique

Publications (2)

Publication Number Publication Date
EP2298032A1 EP2298032A1 (fr) 2011-03-23
EP2298032A4 true EP2298032A4 (fr) 2012-06-20

Family

ID=41264788

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08741968A Withdrawn EP2298032A4 (fr) 2008-05-06 2008-05-06 Structure électroconductrice pour un dispositif émetteur optique

Country Status (4)

Country Link
EP (1) EP2298032A4 (fr)
JP (1) JP2011524463A (fr)
TW (1) TWI503050B (fr)
WO (1) WO2009136863A1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103165786A (zh) * 2011-12-12 2013-06-19 展晶科技(深圳)有限公司 发光二极管晶粒及其制造方法
DE102012201284B4 (de) * 2012-01-30 2018-10-31 Ewe-Forschungszentrum Für Energietechnologie E. V. Verfahren zum Herstellen einer photovoltaischen Solarzelle
TWI480953B (zh) * 2012-03-30 2015-04-11 Hannstouch Solution Inc 複合透明氧化物薄膜及其製造方法
CN104584252B (zh) * 2012-07-02 2018-11-02 赫里亚泰克有限责任公司 用于光电构件的透明电极
DE102012105809B4 (de) * 2012-07-02 2017-12-07 Heliatek Gmbh Organisches optoelektronisches Bauelement mit transparenter Gegenelektrode und transparenter Elektrodenvorrichtung
CN104508809B (zh) * 2012-07-26 2017-12-12 Ev 集团 E·索尔纳有限责任公司 接合衬底的方法
EP2722412B1 (fr) * 2012-10-17 2018-04-25 Solmates B.V. Procédé de dépôt d'un matériau cible sur une matière sensible
CN103227287B (zh) * 2013-04-23 2015-06-24 吉林大学 基于金属纳米粒子掺杂三端子并联聚合物太阳能电池及其制备方法
US9997651B2 (en) * 2015-02-19 2018-06-12 Sunpower Corporation Damage buffer for solar cell metallization
KR20170029037A (ko) * 2015-09-04 2017-03-15 삼성디스플레이 주식회사 투명 표시 장치 및 투명 표시 장치의 제조 방법
JP6983759B2 (ja) * 2016-03-29 2021-12-17 住友化学株式会社 有機光電変換素子、並びにそれを備える太陽電池モジュール及びセンサー
EP3671840A4 (fr) * 2017-08-16 2020-08-19 Sony Corporation Élément d'imagerie, élément d'imagerie en couches et dispositif d'imagerie à semi-conducteur

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6137048A (en) * 1996-11-07 2000-10-24 Midwest Research Institute Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby
US20030170437A1 (en) * 2002-02-26 2003-09-11 Fujikura Ltd. Substrate for transparent electrodes
EP1798774A2 (fr) * 2005-12-13 2007-06-20 The Boeing Company Cellule solaire multijonction avec couche transparente et conductrice intermédiaire
KR20080006812A (ko) * 2006-07-13 2008-01-17 삼성코닝 주식회사 Ｉｔｏ 이중막 증착방법 및 이에 따라 제조된 ｉｔｏ이중막

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3527815B2 (ja) * 1996-11-08 2004-05-17 昭和シェル石油株式会社 薄膜太陽電池の透明導電膜の製造方法
JPH111769A (ja) * 1997-06-10 1999-01-06 Canon Inc スパッタ膜の製造方法及びスパッタ膜
US6420031B1 (en) * 1997-11-03 2002-07-16 The Trustees Of Princeton University Highly transparent non-metallic cathodes
JP4449116B2 (ja) * 1999-09-20 2010-04-14 ソニー株式会社 有機エレクトロルミネッセンス素子及びその製造方法と表示装置
US20050095809A1 (en) * 2001-07-18 2005-05-05 Yuji Nakayama Method of film-forming transparent electrode layer and device therefor
US6569697B2 (en) * 2001-08-20 2003-05-27 Universal Display Corporation Method of fabricating electrodes
GB2404284B (en) * 2003-07-10 2007-02-21 Dainippon Printing Co Ltd Organic electroluminescent element
KR100563058B1 (ko) * 2003-11-21 2006-03-24 삼성에스디아이 주식회사 유기 전계 발광 소자
TWI250669B (en) * 2003-11-26 2006-03-01 Sanken Electric Co Ltd Semiconductor light emitting element and its manufacturing method
US7061026B2 (en) * 2004-04-16 2006-06-13 Arima Optoelectronics Corp. High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer
KR100682870B1 (ko) * 2004-10-29 2007-02-15 삼성전기주식회사 다층전극 및 이를 구비하는 화합물 반도체 발광소자
JP4635570B2 (ja) * 2004-11-08 2011-02-23 凸版印刷株式会社 有機エレクトロルミネッセンス素子の製造方法および製造装置
JP4789535B2 (ja) * 2005-08-01 2011-10-12 株式会社アルバック スパッタリング装置、成膜方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6137048A (en) * 1996-11-07 2000-10-24 Midwest Research Institute Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby
US20030170437A1 (en) * 2002-02-26 2003-09-11 Fujikura Ltd. Substrate for transparent electrodes
EP1798774A2 (fr) * 2005-12-13 2007-06-20 The Boeing Company Cellule solaire multijonction avec couche transparente et conductrice intermédiaire
KR20080006812A (ko) * 2006-07-13 2008-01-17 삼성코닝 주식회사 Ｉｔｏ 이중막 증착방법 및 이에 따라 제조된 ｉｔｏ이중막

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
A. CHAOUI ET AL: "Indium tin oxide/(n+-p) silicon solar cell", SOLAR CELLS, vol. 14, no. 2, 1 May 1985 (1985-05-01), pages 133 - 138, XP055026578, ISSN: 0379-6787, DOI: 10.1016/0379-6787(85)90035-3 *
See also references of WO2009136863A1 *

Also Published As

Publication number Publication date
JP2011524463A (ja) 2011-09-01
TW200948179A (en) 2009-11-16
EP2298032A1 (fr) 2011-03-23
TWI503050B (zh) 2015-10-01
WO2009136863A1 (fr) 2009-11-12

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RIN1 Information on inventor provided before grant (corrected)

Inventor name: LIEW, POOI KWAN

Inventor name: NG, GING MENG

Inventor name: ZHU, FURONG

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Effective date: 20120523

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