EP2238503A1 - Dispositif d'éclairage destiné à éclairer un affichage par l'arrière et affichage doté d'un tel dispositif d'éclairage - Google Patents

Dispositif d'éclairage destiné à éclairer un affichage par l'arrière et affichage doté d'un tel dispositif d'éclairage

Info

Publication number
EP2238503A1
EP2238503A1 EP09705498A EP09705498A EP2238503A1 EP 2238503 A1 EP2238503 A1 EP 2238503A1 EP 09705498 A EP09705498 A EP 09705498A EP 09705498 A EP09705498 A EP 09705498A EP 2238503 A1 EP2238503 A1 EP 2238503A1
Authority
EP
European Patent Office
Prior art keywords
radiation
wavelength
lighting device
wavelength range
wavelength conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09705498A
Other languages
German (de)
English (en)
Inventor
Burkard Wiesmann
Markus Zeiler
Herbert Brunner
Hubert Ott
Ludwig Plötz
Jörg Strauss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of EP2238503A1 publication Critical patent/EP2238503A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Definitions

  • the invention relates to a lighting device for backlighting a display and a display with such a lighting device.
  • a lighting device for a display is given for example in the document DE 10 2004 046 696.3.
  • Wavelength conversion material for example, formed as a layer within the " optoelectronic component or the illumination device and then cured.”
  • a wavelength-converting layer preferably has a thickness between 20 .mu.m and 40 .mu.m, the limits being included.
  • Wavelength conversion materials a ratio of between 0.9 and 1.1 (also based on mass fractions), the limits are also included.
  • FIG. 2B a schematic sectional view of an LCD display with a lighting device according to the embodiment of Figure 2A. 7 3A, a schematic sectional view of an optoelectronic component according to an embodiment,
  • FIGS. 3A and 3B a schematic sectional view of the optical element of the optoelectronic component according to FIGS. 3A and 3B and a schematic beam path within this optical element
  • the first wavelength conversion substance 30 is suitable for converting radiation of a first wavelength range, which is generated by an active zone 33 of the semiconductor body 3, into radiation of a second wavelength range different from the first wavelength range, while the second wavelength conversion substance 31 is suitable for radiation of the first wavelength range in radiation of a different from the first and second wavelength range, the third wavelength range to convert.
  • the wavelength conversion substances 30, 31 can be applied, for example, in one or two wavelength-converting layers 29, 35 to the radiation-emitting front sides 6 of the semiconductor bodies 3, as explained in more detail with reference to FIGS. 4A and 4B. Furthermore, it is also possible for only one wavelength conversion substance 30, 31 to be comprised by a wavelength-converting layer 29, 35 and the other wavelength conversion substance 30, 31 to be formed by a potting 32. It is also possible that the wavelength conversion substances 30, 31 as part of one or two wavelength-converting layers 29, 35 elsewhere
  • the semiconductor body 3 is based on a nitride compound semiconductor material and is suitable for generating radiation of the blue spectral range.
  • the semiconductor body 3 therefore transmits in its operation from its front side 6 radiation of the first wavelength range which comprises blue radiation.
  • Thin-film semiconductor body is referred to herein as a semiconductor body 3, which has an epitaxially grown, radiation-generating semiconductor layer sequence, wherein a growth substrate was removed or thinned such that it no longer sufficiently mechanically stabilizes the thin-film semiconductor body alone.

Abstract

L'invention concerne un dispositif d'éclairage (1) destiné à éclairer un affichage par l'arrière. Le dispositif d'éclairage comprend : - au moins un corps semi-conducteur (3) qui convient pour émettre un rayonnement électromagnétique dans une première plage de longueurs d'onde, - une première substance (30) de conversion de longueur d'onde placée en aval du côté avant (6) d'émission du rayonnement du corps semi-conducteur (3) dans sa direction d'émission (8) et convenant pour convertir le rayonnement de la première plage de longueurs d'onde en un rayonnement d'une deuxième plage de longueurs d'onde différente de la première plage de longueurs d'onde et - une deuxième substance (31) de conversion de longueur d'onde disposée en aval du côté avant (6) d'émission du rayonnement du corps semi-conducteur (3) dans sa direction d'émission (8) et convenant pour convertir le rayonnement de la première plage de longueurs d'onde en un rayonnement d'une troisième plage de longueurs d'onde différente de la première et de la deuxième plage de longueurs d'onde. L'invention concerne en outre un affichage qui présente un tel dispositif d'éclairage (1).
EP09705498A 2008-01-31 2009-01-16 Dispositif d'éclairage destiné à éclairer un affichage par l'arrière et affichage doté d'un tel dispositif d'éclairage Withdrawn EP2238503A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008006975 2008-01-31
DE102008029191A DE102008029191A1 (de) 2008-01-31 2008-06-19 Beleuchtungseinrichtung zur Hinterleuchtung eines Displays sowie ein Display mit einer solchen Beleuchtungseinrichtung
PCT/DE2009/000044 WO2009094976A1 (fr) 2008-01-31 2009-01-16 Dispositif d'éclairage destiné à éclairer un affichage par l'arrière et affichage doté d'un tel dispositif d'éclairage

Publications (1)

Publication Number Publication Date
EP2238503A1 true EP2238503A1 (fr) 2010-10-13

Family

ID=40822270

Family Applications (1)

Application Number Title Priority Date Filing Date
EP09705498A Withdrawn EP2238503A1 (fr) 2008-01-31 2009-01-16 Dispositif d'éclairage destiné à éclairer un affichage par l'arrière et affichage doté d'un tel dispositif d'éclairage

Country Status (7)

Country Link
US (1) US20110141716A1 (fr)
EP (1) EP2238503A1 (fr)
JP (1) JP2011511445A (fr)
KR (1) KR20100110883A (fr)
CN (1) CN102099733A (fr)
DE (1) DE102008029191A1 (fr)
WO (1) WO2009094976A1 (fr)

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US20160053977A1 (en) 2008-09-24 2016-02-25 B/E Aerospace, Inc. Flexible led lighting element
EP2470952B1 (fr) * 2009-08-27 2016-02-10 LG Electronics Inc. Unité de rétroéclairage et dispositif d'affichage
CN102472914A (zh) * 2009-08-27 2012-05-23 Lg电子株式会社 光学组件、背光单元和显示装置
EP2767144B1 (fr) * 2011-10-12 2017-01-11 B/E Aerospace, Inc. Procédé, appareil et articles manufacturés pour étalonner des unités d'éclairage
US20130334545A1 (en) * 2012-06-13 2013-12-19 Shenzhen China Star Optoelectronics Technology Co., Ltd. Surface light source and display device
WO2014183800A1 (fr) * 2013-05-17 2014-11-20 Osram Opto Semiconductors Gmbh Composant optoélectronique et son procédé de fabrication
CN104006334A (zh) * 2014-05-20 2014-08-27 京东方科技集团股份有限公司 一种背光模组及显示装置
KR20160062803A (ko) * 2014-11-25 2016-06-03 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
DE102017102467A1 (de) * 2017-02-08 2018-08-09 Osram Opto Semiconductors Gmbh Verfahren zum Betreiben einer lichtemittierenden Vorrichtung
CN110034226A (zh) * 2019-04-03 2019-07-19 深圳市华星光电半导体显示技术有限公司 Led器件及显示装置

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Also Published As

Publication number Publication date
JP2011511445A (ja) 2011-04-07
KR20100110883A (ko) 2010-10-13
US20110141716A1 (en) 2011-06-16
DE102008029191A1 (de) 2009-08-06
CN102099733A (zh) 2011-06-15
WO2009094976A1 (fr) 2009-08-06

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