Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/50—Wavelength conversion elements
  • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/52—Encapsulations
  • H01L33/54—Encapsulations having a particular shape
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/50—Wavelength conversion elements
  • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/52—Encapsulations
  • H01L33/56—Materials, e.g. epoxy or silicone resin

Definitions

• the invention relates to an optoelectronic component.
• Optoelectronic components with a semiconductor body which emits radiation of a first wavelength range generally comprise a wavelength conversion substance for producing mixed-colored, for example white, light.
• the wavelength conversion substance converts part of the radiation of the first wavelength range emitted by the semiconductor body into radiation of a second wavelength range different from the first wavelength range.
• Such components are described, for example, in the publications WO 02/056390 A1, WO 2006/034703 A1 and Journal of Display Technology, Vol. 3, NO 2, June 2007, pages 155 to 159.
• the wavelength conversion substance can be introduced into a potting of the semiconductor body, for example, or be applied directly to the semiconductor body in the form of a layer.
• the object of the invention is to provide an optoelectronic component with a Wellenkonversionstoff, which has a high efficiency.
• An optoelectronic component comprises in particular:
• At least one semiconductor body which is intended to emit electromagnetic radiation of a first wavelength range
• a wavelength-converting layer on an outer side of the inner shaped body comprising a wavelength conversion substance which is suitable for converting radiation of the first wavelength range into radiation of a second wavelength range different from the first wavelength range,
• the output lens an inner side, which is enclosed by an inner hemispherical surface of radius Rkonver s i o n, and an outer side, which encloses the outside an outer hemispherical surface of radius R having, and the radii Rkonversion and R au SEN of the Weierstrass condition:
• n L i nse the refractive index of the coupling-out lens
• NIU ft the refractive index of the vicinity of the coupling-out lens, typically the air.
• inner and outer hemispherical surfaces are primarily virtual Are surfaces that do not necessarily have to be formed in the device as representational features.
• the coupling-out lens satisfies the above-described Weierstrass condition when the Weierstrass hemisphere shell which is formed by the inner half-spherical surface with the radius R ko nv e r s i on and the outer semi-spherical shell with radius R au sse n, in their entirety lies within the coupling-out lens.
• the Weierstrass hemisphere shell is free of the wavelength-converting layer.
• the outside of the coupling-out lens is shaped and spaced apart from it
• Radiation-emitting semiconductor body arranged such that the outer side of the coupling-out lens, seen from any point of the semiconductor body, appears at such a small angle that no total reflection occurs on the outside of the coupling-out lens.
• the wavelength conversion substance is advantageously arranged at a distance from a radiation-emitting front side of the semiconductor body.
• the space between the wavelength conversion substance of the wavelength-converting layer and the semiconductor body is substantially filled by the inner molded body.
• the inner molded body is designed as a potting. Since the wavelength conversion substance is arranged at a distance from the radiation-emitting front side of the semiconductor body, the temperature loading of the wavelength conversion substance is advantageously kept low. This also increases the efficiency of the component.
• the coupling-out lens may be a separately manufactured element which is, for example, milled, turned or injection-molded and is fastened to the optoelectronic component in an assembly step.
• the coupling-out lens is also possible for the coupling-out lens to be produced on the optoelectronic component, for example by the coupling-out lens being produced as encapsulation on the optoelectronic component.
• a radiation-emitting front side of the semiconductor body is free of the wavelength-converting layer.
• the inner molded body and / or the coupling-out lens are / is essentially free of wavelength conversion substance, that is to say that the inner molded body and / or the coupling-out lens have no wavelength conversion substance apart from small impurities.
• the optoelectronic component comprises a plurality of semiconductor bodies, which are intended to emit electromagnetic radiation.
• a semiconductor body can, in the case that the optoelectronic component comprises a plurality of semiconductor bodies, are also exhibited by some or all semiconductor bodies.
• the optoelectronic component comprises a plurality of semiconductor bodies, these are preferably arranged in a symmetrical, particularly preferably in a point-symmetrical pattern.
• the semiconductor bodies may, for example, be arranged along a line or according to a regular grid.
• the regular grid may be formed, for example, in the manner of a square or hexagonal grid.
• the optoelectronic component comprises a plurality of semiconductor bodies, they do not necessarily have to emit radiation of the same wavelength range. Rather, the semiconductor bodies can emit radiation of different wavelength ranges. In this case, it is also possible that not only one wavelength range is converted, but also several wavelength ranges. For this purpose, the component usually has several different wavelength conversion substances.
• the inner molded body is enclosed by a further hemispherical surface with radius grooves, and the radiation-emitting front side of the semiconductor body has an area A.
• the ratio A / ⁇ * R in ⁇ e ⁇ 2 is preferably between 1/2 and 1/20, with the limits included.
• the other hemisphere surface is, like the inner and the outer hemisphere surface, a virtual, imaginary, Hemisphere surface, which does not necessarily have to be formed in the device as an objective feature.
• the optoelectronic component is a plurality of semiconductor body, the semiconductor body is of an area A 'umtudebar and the ratio A' / ⁇ * Rinn s 2 is preferably between 1/2 and 1/20, the limits being included.
• the area A ' may be, for example, a circle inscribing the semiconductor bodies.
• the area A ' is the minimum area which comprises all the semiconductor bodies of the optoelectronic component.
• an outside of the inner molded body coincides with the further hemispherical surface at least at one point.
• the outer side of the inner molded body coincides with the further hemisphere surface.
• the inner molded body is shaped in the manner of a hemisphere.
• the outside of the inner molded body coincides with the other hemisphere surface.
• the inner molded body is arranged in this embodiment such that the hemisphere is centered over the semiconductor body. This means that the centroid of the
• Radiation-emitting front of the semiconductor body and the center of the hemisphere are located on an optical axis of the optoelectronic component, wherein the optical axis is perpendicular to the radiation-emitting front of the semiconductor body.
• the optoelectronic component comprises a plurality of semiconductor bodies, so they are preferably arranged according to a point-symmetrical pattern in this embodiment, wherein the center of gravity of the pattern, which is usually also a symmetry point of the pattern, and the center of the hemisphere are on the optical axis.
• the inner hemispherical surface coincides with radius Rk on v e rsion with the inside of the coupling-out lens in at least one point.
• the inside of the coupling-out lens coincides with the inner hemisphere surface.
• the outside of the coupling lens also coincides at least in one point with the outer hemisphere surface.
• the outer side of the coupling-out lens coincides with the outer hemisphere surface.
• the wavelength-converting layer is applied in direct contact with the inner shaped body, that is to say that the wavelength-converting layer forms a common interface with the inner shaped body.
• the wavelength-converting layer has a substantially constant thickness according to a further embodiment.
• the wavelength-converting layer is applied as hemispherical shell on the inner molded body, which is preferably also designed as a hemisphere.
• the path length is the Radiation of the first wavelength range within the wavelength-converting layer is substantially constant.
• the coupling-out lens is applied in direct contact with the wavelength-converting layer, that is, the coupling-out lens forms a common interface with the wavelength-converting layer.
• the coupling-out lens is formed in the manner of a hemispherical shell, which is arranged centered over the semiconductor body, that is to say that the centroid of the radiation-emitting front side of the semiconductor body and the center of the hemisphere shell are arranged on the optical axis of the optoelectronic component.
• the optoelectronic component comprises a plurality of semiconductor bodies, they are preferably arranged according to a point-symmetrical pattern in this embodiment, the center of gravity of the pattern, which is usually a symmetry point of the pattern, and the center of the hemisphere shell being on the optical axis of the optoelectronic component ,
• the semiconductor body is applied to a carrier, wherein the carrier has a mirror at least laterally of the semiconductor body.
• the mirror has the task of deflecting radiation of the first and / or the second wavelength range, which is sent to a rear side of the optoelectronic component, to a radiation-emitting front side of the optoelectronic component, which is opposite to the rear side thereof.
• the rear side of the optoelectronic component can be formed, for example, by the carrier.
• the Radiation-emitting front side of the component can be formed, for example, by the outside of the coupling-out lens.
• other elements for example an antireflection coating or a UV-absorbing layer, can also be arranged on the outside of the coupling-out lens.
• the mirror may also be formed below the semiconductor body between the semiconductor body and the carrier.
• the mirror has a reflectance for radiation of the first and / or second wavelength range, which is at least 0.9.
• the mirror has a reflectance for radiation of the first and / or second wavelength range, which is at least 0.98.
• roughness peaks of the mirror preferably have at most a height of 40 nm.
• the mirror is designed specularly reflecting at least laterally of the semiconductor body for radiation of the first and / or second wavelength range.
• the mirror may comprise a metallic layer and a Bragg mirror or consist of a metallic layer and a Bragg mirror.
• the mirror can also be designed as a reflection-enhancing oxide-based layer system.
• a reflection-enhancing oxide-based layer system comprises at least one layer comprising or consisting of an oxide
• the reflection-enhancing oxide-based layer system has two reflection-enhancing oxide-based layer system
• Layers comprising an oxide for example a
• the scattering particles comprise, for example, at least one of the following materials or consist of such: alumina, titania.
• the radiation of the first wavelength range emitted by the semiconductor body comprises only visible radiation, it is generally desirable that the
• Wavelength conversion substance converts only a portion of this radiation of the first wavelength range in radiation of the second wavelength range, while another part of the semiconductor body emitted radiation of the first wavelength range, the wavelength-converting layer passes through unconverted.
• the optoelectronic component emits mixed light which comprises radiation of the first wavelength range and radiation of the second wavelength range. If the semiconductor body emits, for example, visible light from the blue spectral range, then part of this visible blue radiation of the first wavelength range can be converted into yellow radiation by means of the wavelength conversion substance, so that the optoelectronic component emits mixed light with a color locus in the white area of the CIE standard color chart.
• the wavelength-converting layer is made thicker within an inner region which is arranged above the semiconductor body, than inside an outer region of the wavelength-converting layer, which is arranged laterally of the semiconductor body.
• the outer region of the wavelength-converting layer is preferably arranged at least partially circumferentially around the inner region of the wavelength-converting layer.
• the first wavelength range preferably comprises blue radiation, while the second wavelength range comprises yellow radiation.
• the device preferably emits mixed light having a color locus in the white area of the CIE standard color chart.
• a wavelength-converting layer, the thickness of which is greater within the inner region over the semiconductor body than within an outer region laterally of the semiconductor body, generally leads to a particularly homogeneous radiation characteristic of the optoelectronic component with respect to the color locus.
• the coupling-out lens is designed to be absorbent and / or reflective for electromagnetic radiation from the ultraviolet spectral range.
• the coupling-out lens can, for example, comprise glass or consist of glass.
• a reflective layer is arranged on the inside of the coupling-out lens, which is designed to be reflective for radiation of the first wavelength range.
• a reflective layer is particularly preferably used in combination with a semiconductor body which emits radiation from the ultraviolet spectral range.
• the reflective layer is preferably reflective for ultraviolet radiation of the first wavelength range and transmissive for visible radiation of the second wavelength range.
• the reflective layer it is also conceivable to use the reflective layer in combination with a semiconductor body which emits visible radiation, for example, when an almost complete Conversion of the radiation of the first wavelength range is sought in radiation of the second wavelength range.
• FIG. 1A a schematic sectional view of an optoelectronic component according to a first exemplary embodiment
• FIG. 1B a schematic perspective view of the optoelectronic component according to the exemplary embodiment of FIG. 1A,
• FIG. 4 a schematic sectional view of an optoelectronic component according to a fourth exemplary embodiment
• FIG. 5 a schematic sectional view of an optoelectronic component according to a fifth exemplary embodiment
• Figure 6A a schematic plan view of an optoelectronic device according to a sixth embodiment.
• FIG. 6B a schematic sectional view of the optoelectronic component according to FIG. 6A.
• the optoelectronic component according to the exemplary embodiment of FIGS. 1A and 1B has a semiconductor body 1, which is intended to generate electromagnetic radiation of a first
• the semiconductor body 1 is embedded in a radiation-transmissive inner molded body 2 such that no air-filled space is present between the semiconductor body 1 and the inner molded body 2.
• the inner molded body 2 is formed as a hemisphere with radius Ri centered over the semiconductor body. 1 that is to say, the centroid M of a radiation-emitting front side 3 of the semiconductor body 1 and the center M 'of the hemisphere formed by the inner molding 2 lie on an optical axis 4 of the optoelectronic component, the optical axis 4 being perpendicular on the
• a wavelength-converting layer 6 is applied on an outer side 5 of the inner molded body 2, that is, the wavelength-converting layer 6 forms a common interface with the inner molded body 2.
• the wavelength-converting layer 6 has a substantially constant thickness D.
• the outer side 7 of the wavelength-converting layer 6 therefore forms a hemispherical surface of radius R 2 .
• the ratio of the radius R 1 to radius R 2 has, for example, a value between 0.5 and 0.99, the limits being included.
• the ratio of the radius R x to radius R 2 has a value between 0.6 and 0.95, again including the limits.
• the ratio of radius R x to radius R 2 is about 0.8.
• the wavelength-converting layer 6 comprises a wavelength conversion substance 8 which is suitable for converting radiation of the first wavelength range which is emitted by the semiconductor body 1 into radiation of a second wavelength range different from the first wavelength range.
• the wavelength conversion substance 8 is selected, for example, from the group consisting of rare earth doped garnets, rare earth doped alkaline earth sulfides, rare earth doped thiogalates, rare earth doped aluminates, rare earth doped orthosilicates, rare earth doped chlorosilicates, rare earth doped alkaline earth silicon nitrides, rare earth doped oxynitrides, and rare earth doped aluminum oxynitrides.
• the wavelength conversion substance 8 of the wavelength-converting layer 6 is in a binder
• the binder 9 may be, for example, a silicone.
• the wavelength conversion substance 8 may also be applied in the form of a layer to the inner molded body 2, for example by means of electrophoresis.
• the optoelectronic component according to the exemplary embodiment of FIGS. 1A and 1B comprises an output coupling lens
• the decoupling lens 10 forms a common interface with the wavelength-converting layer 6, that is, the decoupling lens 10 is in direct contact with the wavelength-converting layer 6.
• the decoupling lens 10 is furthermore present as a hemispherical shell with an inner radius R 2 and an outer radius R 3 formed.
• the coupling-out lens 10 of the optoelectronic component fulfills the Weierstrass condition, as explained below.
• An inner side 11 of the coupling-out lens 10 with radius R 2 is surrounded by an inner hemispherical surface H inside with radius R conversion, while an outer side 12 of the coupling-out lens 10 has an outer hemisphere surface H outside
• Radius Rausse ⁇ encloses.
• the radii Rk o nver s i o n and R a s u s e n satisfy the Weierstrass condition: R aU SEN ⁇ Rkonversi o n * ni inse / F-air "wherein niuft the refractive index of the vicinity of the coupling-out lens, typically the air , is.
• the inner hemisphere surface H inn en and the outer hemisphere surface H out are virtual surfaces, which are shown in phantom in the figure.
• the output lens 10 a silicone with a refractive index of about 1.46 to nse nii, such as the following values for the radii meet Rkonversion and
• the radiation-emitting front side 3 of the semiconductor body 1 is square in this case and has an area A.
• the inner molded body 2 is surrounded by another, also virtual, hemispherical surface H 3 with radius Ri nnen .
• R i ⁇ n en Ri.
• the inner molded body 2 may for example be designed as a potting. It may, for example, comprise a silicone and / or an epoxide or consist of one of these materials or a mixture of these materials.
• the coupling lens 10 may for example also have epoxy or silicone or consist of one of these materials. Furthermore, the coupling-out lens 10 may also comprise a glass or consist of a glass. A coupling lens 10 made of glass, for example, can be made separately and applied to the device, while a coupling lens 10 is made of a potting material such as silicone or epoxy usually on the device, for example by casting or by injection molding.
• the inner molded body 2, the wavelength-converting layer 6, and the coupling-out lens 10 can be manufactured, for example, by a sequential injection molding method.
• the wavelength conversion substance 8 is usually introduced into a binder 9 and the coupling-out lens 10 has an injection-moldable material, such as a silicone on.
• the semiconductor body 1 of the optoelectronic component according to the exemplary embodiment of FIGS. 1A and 1B is applied to a carrier 14.
• the carrier 14 may be, for example, a printed circuit board.
• the carrier 14 may also comprise or consist of one of the following materials: alumina, aluminum nitride.
• a mirror 15 is arranged in the present case, which is also formed between the semiconductor body 1 and the carrier 14.
• the mirror 15 preferably has a reflectance for radiation of the first and / or the second wavelength range of at least 0.9. Particularly preferably, the mirror 15 has a reflectance of at least 0.98 for radiation of the first and / or the second wavelength range.
• the mirror 15 may be formed by a metallic layer 26, for example. Furthermore, the mirror 15 may also include a metallic layer 26 and a Bragg mirror 27. In this case, the metallic layer 26 is preferably arranged between the carrier 14 and the Bragg mirror 27, while the Bragg mirror 27 forms the surface of the mirror 15. As a rule, the surface of the mirror 15 in this case has roughness peaks which are not higher than 40 nm. Such a mirror 15 is formed, in particular, as a rule specularly reflecting for visible radiation.
• the metallic layer 26 may, for example, comprise aluminum or consist of aluminum.
• the Bragg mirror 27 is constructed, for example, alternately from two silicon oxide layers each and from two titanium oxide layers, that is, the Bragg mirror has two silicon oxide layers and two titanium oxide layers arranged alternately.
• Silicon oxide layers comprise silicon oxide or consist of silicon oxide.
• the titanium oxide layers include titanium oxide or titanium oxide.
• the mirror 15 in the device according to the embodiment of Figures IA and IB is circular with a radius R sp i e gei.
• the semiconductor body 1 is arranged centered on the circular mirror 15, that is to say that the centroid M of the radiation-emitting front side 3 of the semiconductor body 1 and the center of the circular mirror 15 lie on the optical axis 4 of the optoelectronic component which are perpendicular to the
• the coupling-out lens 10, the wavelength-converting layer 6 and the inner molded body 2 are also applied centered over the semiconductor body 1, that is to say that the center M 'of the hemisphere, respectively through the inner molding 2, the wavelength-converting layer 6 and the Auskoppellinse 10 are formed and the centroid M of the radiation-emitting front side 3 of the semiconductor body 1 lie on the optical axis 4 of the optoelectronic component. Furthermore, the true radius R 3 of the outer side 12 of the output lens 10 in the present case with the radius R of the circle Sp iegei agree to the mirror forming 15th The Auskoppellinse 10 thus closes off laterally with the mirror 15.
• the semiconductor body 1, the inner molded body 2, the wavelength-converting layer 6 and the coupling lens 10 are arranged rotationally symmetrical to the optical axis 4 of the optoelectronic component.
• the optoelectronic component furthermore has two external electrical connection points 16, which are intended to make electrical contact with the optoelectronic component.
• the optoelectronic component according to FIG. 2A has a wavelength-converting layer 6 whose thickness D varies.
• the components according to FIG. 2A and the component according to FIGS. 1A and 1B will be described below.
• Elements or features, such as the carrier 14 or the mirror 15, which are not described in further detail, can be embodied, for example, as already described with reference to FIGS. 1A and 1B.
• the optoelectronic component comprises a semiconductor body 1 which is suitable for emitting light of a first wavelength range, which comprises visible blue radiation.
• the wavelength conversion substance 8 of the wavelength-converting layer 6 converts part of the blue radiation of the first wavelength range into radiation a second wavelength range encompassing visible yellow radiation.
• the wavelength conversion substance 8 of the wavelength-converting layer 6 converts part of the blue radiation of the first wavelength range into radiation a second wavelength range encompassing visible yellow radiation.
• Wavelength conversion substance 8 for example YAG: Ce suitable.
• Another part of the blue radiation emitted by the semiconductor body 1 passes through the wavelength-converting layer 6 unconverted.
• the optoelectronic component transmits from its front side 17, which in the present case is formed by the outer side 12 of the coupling-out lens 10, mixed light which comprises portions of blue radiation of the first wavelength range and portions of yellow radiation of the second wavelength range.
• This mixed light preferably has a color locus in the white area of the CIE standard color chart.
• the wavelength-converting layer 6 is embodied such that it is thicker in an inner region 18 above the semiconductor body 1 than in an outer region 19 laterally of the semiconductor body 1.
• the ratio between the thickness D of the wavelength-converting layer 6 in the inner region 18 to the thickness D of FIG Wavelength-converting layer 6 in the outer region 19 is preferably about 5.5.
• the thickness of the wavelength-converting layer 6 As a result of the variation in the thickness of the wavelength-converting layer 6, a greater part of the blue radiation of the first wavelength range passing through the inner region 18 of the wavelength-converting layer 6 is converted by the wavelength conversion substance 8 into yellow radiation of the second wavelength range than from the blue radiation comprising the wavelength converting layer 6 passes through in its outer region 19.
• the semiconductor body 1 since the semiconductor body 1 transmits the blue radiation of the first wavelength range substantially from its front side 3 emits, the proportion of blue radiation is emitted, which is emitted in the direction of the inner region 18, as the proportion of radiation, which extends in the direction of the outer region 19.
• the wavelength-converting layer 6 can have scattering particles 25 which are intended to mix unconverted radiation of the first wavelength range and converted radiation of the second wavelength range.
• the inner shaped body 2 may also have scattering particles 25.
• the scattering particles 25 comprise, for example, aluminum oxide or titanium oxide or consist of one of these materials.
• the outer side 12 of the coupling-out lens 10 is, as in the embodiment according to FIGS. 1A and 1B, designed as a hemispherical surface with a radius R 3 .
• the decoupling surface is-as in the exemplary embodiment according to FIGS. 1A and 1B-applied in direct contact with the wavelength-converting layer 6, the inside 11 of the output lens 110 is adapted to the outside 7 of the wavelength-converting layer 6.
• the inner side 11 of the coupling-out lens 10 is therefore flattened in relation to a hemisphere surface within an inner region corresponding to the inner region 19 of the wavelength-converting layer 6.
• the decoupling lens 10 as well as the coupling-out lens 10 according to the embodiment of Figures IA and IB of the Weierstrass condition corresponds as follows explained.
• the Weierstrass-hemispherical shell is formed outside the hold by the inner semi-spherical surface H n and the outer hemispherical surface H, free from the wavelength-converting layer. 6
• the shape of the inner mold body 2 also deviates from the shape of the inner mold body 2, as described with reference to FIGS. 1A and 1B.
• the outer side 13 of the inner molded body 2 is flattened with respect to a hemispherical surface.
• the semiconductor body 1, the inner molded body 2, the wavelength-converting layer 6 and the coupling-out lens 10 are arranged rotationally symmetrical to the optical axis 4 of the optoelectronic component, which is perpendicular to the radiation-emitting front side 3 of the semiconductor body 1.
• the component according to the exemplary embodiment of FIG. 2B like the component according to the exemplary embodiment of FIG. 2A, has a wavelength-converting layer 6 of variable thickness D.
• the remaining elements and features of the component according to FIG. 2B may be formed, for example, as already described with reference to FIG. 2A.
• the wavelength-converting layer 6 of the component according to FIG. 2A is thicker in an inner region 18 above the semiconductor body 1 than in an outer region 19 laterally of the semiconductor body 1. Therefore, the outer side 5 of the inner molded body 2 deviates from a hemispherical shape.
• the outside 7 of the wavelength-converting layer 6 is designed such that it forms a hemispherical surface of radius R 2 . Therefore, the inside 11 of the coupling-out lens 10, which is applied in direct contact with the wavelength-converting layer 6, also forms a hemisphere surface.
• the outer hemisphere surface H out coincides with the outer surface 12 of the coupling-out lens 10, and it holds
• the ratio between the thickness D of the wavelength-converting layer 6 and the radius R 2 is about 0.44, while the ratio between the thickness D of the wavelength-converting layer 6 and the radius R 2 within the outer region 19 is a value of is about 0.08.
• the transition between the inner region 18 and the outer region 19 in the thickness D of the wavelength-converting layer 6 in this case generally proceeds continuously.
• FIG. 3 shows the simulated course of the Cx coordinate of the color locus as a function of the emission angle of three different optoelectronic components.
• the simulated Cx value of the color locus is shown as a function of the emission angle ⁇ of a conventional component, in which the wavelength-converting layer 6 is applied directly to the radiation-emitting front side 3 of the semiconductor body 1 (curve 1).
• the color location of the radiation emitted by such a component varies significantly with the emission angle ⁇ .
• the Cx value of the color locus is clearly smaller for small emission angles ⁇ than for large emission angles ⁇ .
• FIG. 3 shows the simulated curve of the Cx value of the color locus of an optoelectronic component with an inner molded body 2, a wavelength-converting layer 6 with a constant thickness D on the inner molded body and a coupling-out lens, as described above with reference to FIGS. Curve 2). Even such an optoelectronic component still has a small
• the third curve (curve 3) in the graph of FIG. 3 shows the simulated curve of the Cx value with the emission angle ⁇ for a component whose wavelength-converting layer 6 is made thicker over the semiconductor body 1 laterally, as described with reference to FIGS. 2A and 2B.
• the emission characteristic of such a component is virtually homogeneous with respect to the color locus.
• the component according to the exemplary embodiment of FIG. 4 has a carrier 14 with a reflector region 20 to which the semiconductor body 1 is applied.
• the reflector region 20 is lowered relative to the remaining surface of the carrier 14.
• the reflector region 20 in the present case forms a cavity with oblique side walls 21.
• the reflector region is provided for directing radiation of the semiconductor body to the radiation-emitting front side of the optoelectronic component. Therefore, the mirror 15 is formed in particular on the reflector region 20 of the carrier 14.
• the reflector region is rotationally symmetrical with respect to the optical axis 4 of the component, which is perpendicular to the radiation-emitting front side 3 of the semiconductor body 1 and extends through the centroid M of the radiation-emitting front side 3 of the semiconductor body 1.
• the semiconductor body 1 is embedded in a molded body 2 such that there is no air-filled space between the semiconductor body 1 and the inner molded body 2.
• the Wavelength-converting layer 6 and the coupling lens 10 are, as in the embodiment according to the figures IA and IB designed as hemispherical shells, which are each applied in direct contact with each other or with the inner moldings.
• the center M 'of the hemispherical shells formed by the wavelength-converting layer 6 and the coupling-out lens 10 lies above the semiconductor body 1 in the emission direction of the semiconductor body 1 due to the reflector region 20.
• condition is also for the output lens 10.
• Embodiment of Figure 5 in contrast to the optoelectronic component according to the embodiment of Figures IA and IB on a coupling lens 10, the outer side 12 deviates from a hemisphere surface.
• the Outer side 12 of Auskoppeilinse 10 is spherically curved in an inner region 22 with a radius of curvature Rk rümmun g> Raussen / where R outer is the outer radius of the Weierstrass virtual hemispherical shell.
• the coupling-out lens 10 has inclined side surfaces 23, which delimit the inner region of the coupling-out lens 10 laterally.
• the coupling lens 10 with refractive index ni insee obeys the Weierstrass condition, as explained below.
• the radii R a and Rkonversion Ussen meet the Weierstrass condition: Raussen ⁇ Rkonversion * ni inse / n air, niuft the refractive index of air.
• the optoelectronic component according to FIGS. 6A and 6B has a plurality of semiconductor bodies 1.
• the semiconductor bodies 1 of the component according to the exemplary embodiment of FIGS. 6A and 6B are arranged in a regular pattern, in the present case according to a square grid 24.
• the semiconductor bodies 1 each lie with a centroid M of the radiation-emitting front side 3 on a grid point of the square grid 24.
• the semiconductor bodies 1 may, for example, also be arranged according to a hexagonal grid.
• the semiconductor bodies 1 are arranged centered below the inner shaped body 2, that is to say that a center of gravity S of the square lattice 24 and the center M 'of the hemisphere, which is formed by the inner shaped body 2, lie on the optical axis 4 of the optoelectronic component, wherein the optical axis is perpendicular to the mirror 15.
• the coupling-out lens 10 is also arranged centered over the semiconductor bodies 1, that is to say that the center of gravity S of the square lattice 24 and the center M 'of the hemispherical shell forming the coupling-out lens 10 lie on the optical axis 4 of the optoelectronic component.
• the center of gravity S of the square grid 24 is also the point of symmetry of the grid 24 in the present case.
• the four semiconductor bodies 1 of the optoelectronic component of the exemplary embodiment of FIGS. 6A and 6B are inscribed by a circle with area A ', wherein in each case an outer corner of a semiconductor body 1 lies on the inscribing circle.
• the inner molded body 2 is surrounded by another, likewise virtual, hemispherical surface H 3 with radius R inner .
• the semiconductor bodies 1 emit, for example, ultraviolet radiation, that is to say that the first wavelength range comprises ultraviolet radiation.
• the coupling-out lens 10 is formed in this case absorbing ultraviolet radiation, for example by having a glass.
• a reflective layer 28 is disposed on the inside 11 of the coupling-out lens 10, which is reflective to ultraviolet radiation and transmissive to visible radiation.
• the reflective layer 18 may be, for example, a dielectric mirror.

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• 2007
  • 2007-10-17 DE DE102007049799A patent/DE102007049799A1/de not_active Withdrawn
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  • 2008-09-10 US US12/680,637 patent/US8624289B2/en not_active Expired - Fee Related
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