EP2188792B1 - Zusammensetzung einer amorphen legierung für einen magnetomechanischen resonator und diese enthaltendes elektronisches artikelüberwachungsetikett - Google Patents
Zusammensetzung einer amorphen legierung für einen magnetomechanischen resonator und diese enthaltendes elektronisches artikelüberwachungsetikett Download PDFInfo
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- EP2188792B1 EP2188792B1 EP07798193.4A EP07798193A EP2188792B1 EP 2188792 B1 EP2188792 B1 EP 2188792B1 EP 07798193 A EP07798193 A EP 07798193A EP 2188792 B1 EP2188792 B1 EP 2188792B1
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- active resonator
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- 239000003550 marker Substances 0.000 title claims description 26
- 239000000203 mixture Substances 0.000 title claims description 14
- 229910000808 amorphous metal alloy Inorganic materials 0.000 title description 3
- 238000000137 annealing Methods 0.000 claims description 34
- 230000005291 magnetic effect Effects 0.000 claims description 23
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910052748 manganese Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910001122 Mischmetal Inorganic materials 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 26
- 239000000463 material Substances 0.000 description 16
- 229910052759 nickel Inorganic materials 0.000 description 10
- 239000011651 chromium Substances 0.000 description 8
- 230000005415 magnetization Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 239000010955 niobium Substances 0.000 description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 238000002791 soaking Methods 0.000 description 4
- 238000007792 addition Methods 0.000 description 3
- 230000009849 deactivation Effects 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- CGFFKDRVHZIQHL-UHFFFAOYSA-N 1-but-3-en-2-yl-3-(methylcarbamothioylamino)thiourea Chemical compound CNC(=S)NNC(=S)NC(C)C=C CGFFKDRVHZIQHL-UHFFFAOYSA-N 0.000 description 1
- 229910000521 B alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910002555 FeNi Inorganic materials 0.000 description 1
- 229910018062 Ni-M Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F42—AMMUNITION; BLASTING
- F42D—BLASTING
- F42D1/00—Blasting methods or apparatus, e.g. loading or tamping
- F42D1/04—Arrangements for ignition
- F42D1/043—Connectors for detonating cords and ignition tubes, e.g. Nonel tubes
-
- E—FIXED CONSTRUCTIONS
- E21—EARTH OR ROCK DRILLING; MINING
- E21B—EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B43/00—Methods or apparatus for obtaining oil, gas, water, soluble or meltable materials or a slurry of minerals from wells
- E21B43/11—Perforators; Permeators
- E21B43/116—Gun or shaped-charge perforators
- E21B43/117—Shaped-charge perforators
-
- G—PHYSICS
- G08—SIGNALLING
- G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
- G08B13/00—Burglar, theft or intruder alarms
- G08B13/22—Electrical actuation
- G08B13/24—Electrical actuation by interference with electromagnetic field distribution
- G08B13/2402—Electronic Article Surveillance [EAS], i.e. systems using tags for detecting removal of a tagged item from a secure area, e.g. tags for detecting shoplifting
- G08B13/2428—Tag details
- G08B13/2437—Tag layered structure, processes for making layered tags
-
- G—PHYSICS
- G08—SIGNALLING
- G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
- G08B13/00—Burglar, theft or intruder alarms
- G08B13/22—Electrical actuation
- G08B13/24—Electrical actuation by interference with electromagnetic field distribution
- G08B13/2402—Electronic Article Surveillance [EAS], i.e. systems using tags for detecting removal of a tagged item from a secure area, e.g. tags for detecting shoplifting
- G08B13/2428—Tag details
- G08B13/2437—Tag layered structure, processes for making layered tags
- G08B13/2442—Tag materials and material properties thereof, e.g. magnetic material details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/13—Amorphous metallic alloys, e.g. glassy metals
- H01F10/131—Amorphous metallic alloys, e.g. glassy metals containing iron or nickel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N35/00—Magnetostrictive devices
- H10N35/80—Constructional details
- H10N35/85—Magnetostrictive active materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/23—Sheet including cover or casing
- Y10T428/239—Complete cover or casing
Definitions
- the field of this invention is electronic article surveillance and more particularly a marker for use in an electronic article surveillance system.
- EAS Electronic Article Surveillance
- AM acoustomagnetic
- label 100 may include a small cavity 102, which is formed to accommodate one or more active elements 104.
- Active element 104 is a magnetomechanical metal strip and cavity 102 is formed to allow proper mechanical resonance of the active element.
- Active element(s) 104 are placed inside cavity 102, and followed by sealing of top cover 106.
- a strip of semi-hard magnetic bias 108 is located proximate the outside of cavity 102 and active element 104.
- marker 100 is completed by adding an adhesive layer with release liner 110.
- FIG l(b) illustrates a typical EAS system employing a marker such as AM marker 100.
- transmitter pedestal 114 generates an electromagnetic field 116 between it and receiver pedestal 118.
- the field is typically generated in a series of pulses, which produce regular bursts of electromagnetic energy.
- the range of the magnetic field defines an "interrogation zone"(120) between the pedestals.
- active element 104 of AM marker 100 absorbs energy from field 116, and resonates to generate an electromagnetic response signal to the incoming electromagnetic energy from transmitter.
- active element 104 is comprised of a strip of high permeability ( ⁇ ) magnetic material. In addition, it is also a high quality factor (Q) mechanical resonator.
- the Q can be as high as 3000, depending on the surface friction of the strip during its resonance.
- Receiver pedestal 118 listens for this response signal in between bursts from transmitter 114, in order to detect the presence of a marker within the interrogation zone. When a marker is detected, the system may then trigger an alarm to alert security.
- the active element to be used in the marker may be produced by determining a number of factors in order to achieve an element having the desired properties. For example, this can be accomplished through careful selection of the composition from which the element is formed, and the manner in which the composition is annealed and otherwise processed, mechanically, chemically, and electromagnetically.
- a number of techniques for optimizing the active element of an EAS marker are known. Some of these are disclosed, for example, in U.S. Patent Nos. 4,510,489 ; 5,252,144 ; 5,469,140 ; 5,469,489 ; 5,628,840 ; 6,018,296 ; and 6,359,563 .
- U.S Patent Nos. 6,018,296 and 6,359,563 disclose an FeNi based alloy having low or no cobalt, and with specified amounts of additional elements, M, (such as Si, B, C, P, Ge, Nb, Mo, Cr and Mn) to control how glassy the material is, its formability, and its susceptibility to changes in magnetic properties due to mechanical tension on the material during annealing.
- M additional elements
- the '296 patent also states that annealing this material in the presence of a transverse (to the length of the active element ribbon) magnetic field is undesirable because a sufficiently low slope of the frequency response characteristic of the material cannot be achieved at the desired DC bias field operating point of about 517.3 Am -1 (6.5 Oe).
- the '563 patent while it is able to achieve a sufficiently low slope for the frequency response characteristic even with the use of a transverse magnetic field, requires the use of reel to reel annealing at these higher temperatures and shorter annealing times.
- EP 0 702 096 A1 discloses the use of magneto-restrictive alloys based on Fe, Co, for surveillance systems with magnetoelastic tags.
- GB 2 156 630 A discloses an article surveillance system and markers for use therein.
- a marker is comprised of a strip of amorphous magnetostrictive ferromagnetic material.
- the balance of remaining elements, M may include one or more selected from the group consisting of Co, Si, B, C, P, Sn, Cu, Ge, Nb, Mo, Cr, Mn, and Mischmetal.
- the material can include about 15-30% of one or more selected from the group consisting of Si, B, C, and P in order to affect the glassy nature of the material.
- it may include from 0 to about 10% of one or more selected from the group consisting of Sn, Cu, Ge, Nb, Mo, Cr, Mn, and Mischmetal.
- the batch annealing is conducted particularly at a temperature of about 250° C for about one hour.
- Figure 2 illustrates a typical resonant frequency characteristic of an active element.
- the resonant frequency of the element varies with the DC field (generated by interaction with the semi-hard bias magnet).
- the DC bias field increases, the resonant frequency decreases, until it reaches a minimum (F mm ) at a bias field of H mm (Am -1 ).
- the frequency then increases quickly beyond H mm .
- the frequency-bias magnetic field interdependence can be described in Eq.
- F res 1 2 ⁇ L ⁇ E ⁇ 1 + 9 ⁇ 2 E ⁇ H 2 M s ⁇ H k 3
- E, L, p are the Young's modulus, length, and density of the amorphous strip
- H, ⁇ , M s , and H k are the applied DC magnetic field, magnetostriction, saturation magnetization, and transverse (to the ribbon length) anisotropy field, respectively.
- the amplitude characteristic of the response signal can be demonstrated by taking measurements at three time increments (Ao, Ai, A 2 ) after marker 100 is subject to electromagnetic field 116; for example, at 0, 1, and 2 milliseconds after a burst, as shown in Figure 3 .
- the amplitude increases with DC magnetic field, until reaching a maximum at Hmax, and then starts decreasing gradually with bias field, finally diminishing as the active strip saturated magnetically.
- the peak Of A 0 , Ai, and A 2 shifts toward left (lower DC field), signifying higher Q at lower magnetic field.
- Ai amplitude represents what receiver pedestal 116 senses.
- the maximum of Ai, and the bias field when it occurs, are designated as Ai max , and H max , respectively.
- an operating point for the active element / bias in the marker having a desired resonant frequency (such as 58 kHz for AM markers) at a desired DC bias field, typically less than H mm .
- the frequency slope in Hz / Am -1 at this operating point is smaller than the maximum slope for the frequency characteristic curve.
- the Ai amplitude at the operating point is larger than the minimum amplitude for the amplitude characteristic curve.
- a semi-hard magnetic bias strip is preferably used. This strip is magnetized along the longitudinal direction, in order to provide a DC magnetic field of the desired strength to the active strip.
- the bias field must be changed to achieve a proper frequency shift. This can be achieved by various methods, including AC demagnetization or magnetization by contacting a patterned magnet.
- the difference in resonant frequency at the DC bias field of the operating point and the resonant frequency at the DC bias field after deactivation should preferably be larger than a selected minimum desired to avoid unintentional detection by receiver pedestal 116.
- the frequency / bias field relation may be determined by at least three parameters even if the Young's Modulus and density remain relatively consistent among varying compositions.
- the anisotropy (H k ) has the strongest effect since it is cubic. C will also be affected by ⁇ and M s . Depending on the value of C, the anisotropic field may include contribution from field induce anisotropy as well as shape anisotropy.
- Ku maximizes at around 24% nickel concentration.
- Ku also decreases with increased annealing temperature.
- the annealing temperature is set above 300 °C and usually at about 360°C. Under these conditions, the maximum Ku attainable at 30% Ni will be roughly about 410 J/m3.
- the field induced H k of an Fe-Ni active element depends strongly on the Ni concentration, as well as on the annealing conditions, specifically the time and temperature of the annealing process.
- H k increases initially as annealing temperature decreases below material Curie Temperature, reaches a maximum, and then decreases as annealing temperature reduced further.
- M s (T a ) - the saturation magnetization at the annealing temperature (T a ) and mobility of atoms in the amorphous alloy create the optimum annealing temperature at which the H k is maximized.
- the saturation magnetization is higher, thus offers a potential of reaching higher H k .
- a longer annealing time is necessary for an effective rearranging of the amorphous material in a short range, microscopic scale.
- the desired H k can still be obtained by lowering the annealing temperature and increasing the annealing time. That is, if a higher field induced anisotropy is desired, annealing with relatively lower annealing temperature, and longer annealing time can be used.
- the saturation magnetization is another important parameter. It is directly related to the magnetic signal strength. It also plays a role in forming the resonant frequency and DC magnetic bias relation, as shown in Eq 1.
- Figure 5 shows the relation of how room temperature saturation magnetization varies with nickel concentration percentage. It is independent of processing / annealing conditions, and decreases monotonically with nickel percent concentration.
- the magnetostrictive constant ( ⁇ s) of the amorphous alloys also depends on Ni atomic percent concentration as shown in Fig. 6 .
- the magnetostrictive constant reduces linearly with increasing Ni % from about 32 ppm at 0% Ni down to about 5 ppm at 60% Ni concentration.
- FIG. 7 shows the simulated results on resonant frequency compared to the existing active elements for EAS markers. As shown in Figure 7 , the frequency dependence on the DC bias field is very close to the existing elements up to about 716.2 Am -1 (9 Oe). In addition, since the saturation magnetization (M s ) is much higher, it is expected that the resonant signal magnitude will be higher.
- composition variations that can further enhance the strength of the field induce anisotropy.
- a change in the percentage of Si, B, C, and/or P content could potentially increase the Curie temperature of the material which can increase induced H k .
- Mn or, Sn, Cu, Ge, Nb, Mo, and/or Cr
- Another approach is to reduce the magnetostriction ( ⁇ ) by adding traces of elements, such as chromium (Cr), Niobium (Nb), rare earth Mischmetal - mix of elements).
- Cr chromium
- Nb Niobium
- Mischmetal - mix of elements such as chromium (Cr), Niobium (Nb), rare earth Mischmetal - mix of elements.
- the effect of adding Mn, Cr, or Mo can be to reduce ⁇ s , reduce J s , or reduce H k .
- Mn increases the Creep effect, while Cr reduces it; and Mo has a positive creep effect
- Table 2 shows data for sputter deposited Fe-Mn-B alloy thin films indicating a significant (238.7 Am -1 to 318.3 Am -1 (3 to 4 Oe)) increase in H k for small amount (0.5%) of Mn additions to Fe-B. This increase is much greater than that obtained by Ni additions to Fe-B, which are typically less than 79.6 Am -1 (1 Oe) for each atomic % Ni added. To further reduce the materials cost of the alloy, small amounts of Mn could be included in combination with reduced amounts of Ni.
- FIG. 8 The resonant performance of sample # two, batch annealed in the presence of a transverse magnetic field at 250°C for about one hour is shown in Figure 8 .
- an active element with parameters that would yield performance on par with existing EAS resonator element can be achieved in a composition having Fe in the range of 40-70 atomic percent, Ni in a range of 10 to less than 25 atomic percent, and the remaining elements in a range of 10-50 atomic percent that is batch annealed in the presence of a transverse magnetic field at a temperature below 300° C and for a time greater than at least one hour.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Computer Security & Cryptography (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Mining & Mineral Resources (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Fluid Mechanics (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Soft Magnetic Materials (AREA)
- Burglar Alarm Systems (AREA)
- Automotive Seat Belt Assembly (AREA)
- Clamps And Clips (AREA)
Claims (5)
- Etikett (100) zur Verwendung in einem magnetomechanischen elektronischen Artikelüberwachungssystem (EAS), aufweisend:ein magnetomechanisches aktives Resonatorelement (104), welches durch einen flachen Streifen aus amorpher magnetostriktiver Legierung mit einer Zusammensetzung FeaNibMc gebildet ist, wobei a+b+c = 100, wobei a in einem Bereich von 40 bis 70 Atomprozent liegt, b in einem Bereich von 10 bis weniger als 25 Atomprozent liegt, und c in einem Bereich von 10 bis 50 Atomprozent liegt, und wobei M des Restgehalt an übrigen Elementen ist; wobei M ein oder mehrere ausgewählt aus der Gruppe bestehend aus Si, B, C und P ist;ein Vorspannelement (108), welches benachbart zu dem Resonatorelement angeordnet ist;ein Gehäuse, das eingerichtet ist, das aktive Resonatorelement (104) und das Vorspannelement (108) zu enthalten; undwobei das magnetomechanische aktive Resonatorelement (104) in Gegenwart eines Magnetfelds, welches im Wesentlichen quer zu der Ebene des Elements verläuft, und bei einer Temperatur von weniger als 300°C in einer Zeit von mehr als einer Stunde einer Haubenglühung unterzogen wird; wobeidie Frequenzsteigung des aktiven Resonatorelements (104) in Hz/A.m-1 am Betriebspunkt geringer als die maximale Steigung für die Frequenzkennlinie ist;wobei eine Amplitude A1 am Betriebspunkt größer als die Mindestamplitude für die Amplitudenkennlinie ist.
- Etikett nach Anspruch 1, wobei M ein oder mehrere ausgewählt aus der Gruppe bestehend aus Co, Si, B, C, P, Sn, Cu, Ge, Nb, Mo, Cr und M ist.
- Etikett nach Anspruch 1, wobei M 15 bis 30 Atomprozent beträgt.
- Etikett nach Anspruch 1, wobei M ein oder mehrere aus der Gruppe bestehend aus Si, B, C und P ausgewählte erste Elemente aufweist, um die glasartige Beschaffenheit des aktiven Elements zu beeinflussen; und ein oder mehrere aus der Gruppe bestehend aus Sn, Cu, Ge, Nb, Mo, Cr, Mn und Mischmetall ausgewählte zweite Elemente aufweist, um die magnetischen Eigenschaften des aktiven Resonatorelements (104) zu beeinflussen.
- Etikett nach Anspruch 4, wobei das erste Element 15 bis 30 Atomprozent des aktiven Resonatorelements (104) aufweist, und das zweite Element 0 bis 10 Atomprozent des aktiven Resonatorelements (104) aufweist.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP17210712.0A EP3346454A1 (de) | 2006-06-06 | 2007-06-07 | Amorphe legierungszusammensetzungen für magnetomechanischen resonator und eas-marker damit |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US81128106P | 2006-06-06 | 2006-06-06 | |
PCT/US2007/070557 WO2007143707A2 (en) | 2006-06-06 | 2007-06-07 | Amorphous alloy compositions for a magnetomechanical resonator and eas marker containing same |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP17210712.0A Division EP3346454A1 (de) | 2006-06-06 | 2007-06-07 | Amorphe legierungszusammensetzungen für magnetomechanischen resonator und eas-marker damit |
EP17210712.0A Division-Into EP3346454A1 (de) | 2006-06-06 | 2007-06-07 | Amorphe legierungszusammensetzungen für magnetomechanischen resonator und eas-marker damit |
Publications (2)
Publication Number | Publication Date |
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EP2188792A2 EP2188792A2 (de) | 2010-05-26 |
EP2188792B1 true EP2188792B1 (de) | 2019-08-28 |
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Family Applications (2)
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EP07798193.4A Active EP2188792B1 (de) | 2006-06-06 | 2007-06-07 | Zusammensetzung einer amorphen legierung für einen magnetomechanischen resonator und diese enthaltendes elektronisches artikelüberwachungsetikett |
EP17210712.0A Withdrawn EP3346454A1 (de) | 2006-06-06 | 2007-06-07 | Amorphe legierungszusammensetzungen für magnetomechanischen resonator und eas-marker damit |
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EP17210712.0A Withdrawn EP3346454A1 (de) | 2006-06-06 | 2007-06-07 | Amorphe legierungszusammensetzungen für magnetomechanischen resonator und eas-marker damit |
Country Status (7)
Country | Link |
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US (3) | US9520219B2 (de) |
EP (2) | EP2188792B1 (de) |
JP (2) | JP2010529587A (de) |
AU (1) | AU2007256635A1 (de) |
CA (2) | CA2590826C (de) |
ES (1) | ES2758479T3 (de) |
WO (1) | WO2007143707A2 (de) |
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WO2015179698A2 (en) * | 2014-05-21 | 2015-11-26 | Hunting Titan, Inc. | Shaped charge retainer system |
US9523265B2 (en) * | 2014-10-01 | 2016-12-20 | Owen Oil Tools Lp | Detonating cord clip |
MX2017011412A (es) * | 2015-04-02 | 2017-12-20 | Owen Oil Tools Lp | Cañon de perforacion. |
WO2016168491A1 (en) * | 2015-04-14 | 2016-10-20 | Hunting Titan, Inc. | Detonating cord retaining device |
KR101791349B1 (ko) | 2016-07-29 | 2017-10-27 | 서울대학교산학협력단 | B20-type 결정구조를 가지는 준안정 다중전이금속-단일저마늄 화합물과 그 제조방법 |
CA3056964C (en) * | 2017-03-28 | 2022-01-18 | Dynaenergetics Gmbh & Co. Kg | Shaped charge with self-contained and compressed explosive initiation pellet |
US11078762B2 (en) | 2019-03-05 | 2021-08-03 | Swm International, Llc | Downhole perforating gun tube and components |
US10689955B1 (en) | 2019-03-05 | 2020-06-23 | SWM International Inc. | Intelligent downhole perforating gun tube and components |
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- 2007-06-07 ES ES07798193T patent/ES2758479T3/es active Active
- 2007-06-07 AU AU2007256635A patent/AU2007256635A1/en not_active Abandoned
- 2007-06-07 CA CA2689534A patent/CA2689534A1/en not_active Abandoned
- 2007-06-07 US US12/451,870 patent/US20100279056A1/en not_active Abandoned
- 2007-06-07 JP JP2009514540A patent/JP2010529587A/ja active Pending
- 2007-06-07 EP EP07798193.4A patent/EP2188792B1/de active Active
- 2007-06-07 EP EP17210712.0A patent/EP3346454A1/de not_active Withdrawn
- 2007-06-07 JP JP2010511152A patent/JP5118748B2/ja not_active Expired - Fee Related
- 2007-06-07 WO PCT/US2007/070557 patent/WO2007143707A2/en active Application Filing
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2016
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None * |
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EP3346454A1 (de) | 2018-07-11 |
US20170059293A1 (en) | 2017-03-02 |
US20100279056A1 (en) | 2010-11-04 |
US10401137B2 (en) | 2019-09-03 |
WO2007143707A3 (en) | 2008-06-12 |
AU2007256635A1 (en) | 2007-12-13 |
WO2007143707A2 (en) | 2007-12-13 |
US20100263523A1 (en) | 2010-10-21 |
CA2590826A1 (en) | 2007-12-06 |
ES2758479T3 (es) | 2020-05-05 |
CA2590826C (en) | 2014-09-30 |
EP2188792A2 (de) | 2010-05-26 |
CA2689534A1 (en) | 2007-12-13 |
JP2010529551A (ja) | 2010-08-26 |
US9520219B2 (en) | 2016-12-13 |
JP5118748B2 (ja) | 2013-01-16 |
JP2010529587A (ja) | 2010-08-26 |
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