EP2178152A1 - Elektronische Umschaltvorrichtung für Hochfrequenzsignale - Google Patents

Elektronische Umschaltvorrichtung für Hochfrequenzsignale Download PDF

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Publication number
EP2178152A1
EP2178152A1 EP09173457A EP09173457A EP2178152A1 EP 2178152 A1 EP2178152 A1 EP 2178152A1 EP 09173457 A EP09173457 A EP 09173457A EP 09173457 A EP09173457 A EP 09173457A EP 2178152 A1 EP2178152 A1 EP 2178152A1
Authority
EP
European Patent Office
Prior art keywords
diode
transmission line
series
shunt
access point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09173457A
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English (en)
French (fr)
Inventor
Michel Bizien
Pascal Cornic
Jean-Philippe Coupez
Julien Boucher
Jérémie Hemery
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Groupe des Ecoles des Telecommunications/ Ecole Nationale Superieure de Telecommunications De Bretagne
Thales SA
Original Assignee
Groupe des Ecoles des Telecommunications/ Ecole Nationale Superieure de Telecommunications De Bretagne
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Groupe des Ecoles des Telecommunications/ Ecole Nationale Superieure de Telecommunications De Bretagne, Thales SA filed Critical Groupe des Ecoles des Telecommunications/ Ecole Nationale Superieure de Telecommunications De Bretagne
Publication of EP2178152A1 publication Critical patent/EP2178152A1/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/12—Auxiliary devices for switching or interrupting by mechanical chopper
    • H01P1/127—Strip line switches

Definitions

  • the invention relates to an electronic switching device for high frequency signals.
  • the invention finds particular utility in the connection between a microwave antenna and an electronic circuit.
  • This circuit comprises for example one or two channels intended to be connected to the antenna.
  • a first channel commonly called Tx channel
  • a second channel commonly called Rx channel
  • a device with two access points used as a switch is well known in the English literature under the name of SPST for "Single-Pole, Single-throw” and a device with three access points used as a switch is well known. under the name of SPDT for "Single-Pole, Double-throw”.
  • PIN diode For microwave uses, it is known to use, as a switching element, diodes comprising an undoped zone, called the intrinsic zone, interposed between doped zones, one positive and the other negative. Subsequently this type of diode will be called PIN diode in reference to its name in the Anglo-Saxon literature: "Positive Intrinsic Negative Diode". PIN diodes, reverse biased, have a low capacitance and a high breakdown voltage, while in live they have a very low resistance, hence their use in microwave switching.
  • SPST type switching devices comprising two PIN diodes have been developed, one of which, referred to as a series diode, is connected in series between the two access points and the other, called a shunt diode, between one of the points and a mass of the device which furthermore comprises biasing means of the diodes making it possible to define an on state of the device obtained when the series diode and the shunt diode are in an on state, and a blocked state of the device obtained when the series diode and the shunt diode are in a secure state.
  • the serial link is the link between the two access points and shunts the link between the first access point and the ground.
  • the series branch contains the series diode and the shunt branch contains the shunt diode.
  • PIN diodes For an SPDT switching device, four PIN diodes, two series diodes and two shunt diodes are used. These devices have good performance levels in terms of adaptation, insertion loss and isolation.
  • a transmission line section in series with each shunt diode has been placed.
  • This section is adapted according to the wavelength ⁇ , of the switched signal.
  • the tuning of the transmission line section limits the bandwidth of the device due to the length equivalent to ⁇ / 4.
  • the invention aims to improve the operation of such devices including improving its bandwidth. This goal is achieved by avoiding setting up a shunt branch whose length is equivalent to ⁇ / 4.
  • the figure 1 represents an SPDT switch for connecting to an antenna, either an Rx channel or a Tx channel.
  • the device comprises three ports 11, 12 and 13.
  • the access 11 is connected to a transmitter, thus forming the channel Tx
  • the access 12 is connected to an antenna
  • the access 13 is connected to a receiver , forming the Rx path.
  • the transmitter, the receiver and the antenna are external to the device and are not represented on the figure 1 .
  • a radiofrequency signal from the transmitter drives the switch through a decoupling capacitor Cd1.
  • a radiofrequency signal received by the antenna drives the switch to the access point 12 via a decoupling capacitor Cd2 and leaves the switch at the access point 13 via a decoupling capacitor.
  • Cd3 the decoupling capacitor
  • the switch is symmetrical with respect to the access 12, intended to be connected to the antenna.
  • the switch makes it possible to connect access 12, either access 11 or access 13.
  • the switch comprises a diode D1, called a shunt diode, connected between the access point 11, on the side of its anode, and a mass 14 of the switch, on the side of its cathode, and a diode D2, called series diode, connected in series between the access point 11, on the side its anode, and the access point 12 on the side of its cathode.
  • Biasing means 15 of the diodes D1 and D2 make it possible to define an on or off state between the channels 11 and 12.
  • the biasing means 15 comprise, for example, a voltage source 16 filtered by an inductor 17 and a capacitor 18.
  • inductor 17 is connected between the voltage source 16 and the access point 11.
  • the capacitor 18 is connected between the voltage source 16 and the ground 14.
  • the voltage source 16 can take two levels. A low level blocks the passage of a current in the diodes D1 and D2, while a high level makes the diodes D1 and D2 passing.
  • the switch comprises a diode D4 called shunt diode, connected between the access point 13 and the ground 14 and a diode D3 called series diode, connected between the access point 13 and the access point 12.
  • Polarization means 19 of the diodes D3 and D4 identical to the polarization means 15, make it possible to define an on or off state between the channels 12 and 13.
  • the switch comprises several sections of transmission lines arranged at specific locations of the switch.
  • the transmission lines are dimensioned so that, by combining the electrical effects of the series and shunt branches with that of the common branch on the access 12, one obtains, on the one hand, the lowest level of possible reflection and the minimum insertion losses on one of the channels Tx or Rx in the on state, associated on the other hand, the highest level of insulation possible on the other channel in the blocked state.
  • Shunt branch is then called the assembly formed by the shunt diode D1, the first transmission line L1 and the third transmission line L3.
  • the series formed by the series diode D2 and the second transmission line L2 will be called the series branch.
  • the switch has other lines of symmetrical transmissions of the lines L1 to L4 in each of the branches comprising the diodes D3 and D4. More specifically, a transmission line L5 is arranged between the access point 13 and the shunt diode D4, a transmission line L6 is arranged between the series diode D3 and the second access point 12, a transmission line L7 is arranged at the common point of the transmission line L5 and the shunt diode D4, a transmission line L8 is disposed at the access point 13. There is also a transmission line L9 at the access point 12.
  • This arrangement increases the number of adaptation possibilities branches, series and shunt, and makes it easier to optimize all the electrical performance of the switch. Moreover, the use of transmission lines of reduced dimensions allows greater compactness of the switch.
  • the transmission lines L3 and L4 are of the open circuit type.
  • the transmission lines L7 and L8 are also of the open circuit type.
  • the transmission line L9 short circuit type.
  • the transmission lines L3, L4, and L7 to L9 are known as Stub.
  • the different transmission lines L1 to L9 advantageously have the same characteristic impedance which is for example 50 ohms.
  • FIG. 2 The case of a SPST type switch device, that is to say comprising only two access points is represented on the figure 2 .
  • This switch has only two access points similar to points 11 and 12.
  • the access point will therefore have the same pins 11 and 12 and there are also the decoupling capacitors Cd1 and Cd2, the diodes D1 and D2 and the transmission lines L1 to L4.
  • An open-circuit transmission line L10 is placed at the common point of the transmission lines L2 and L9, that is to say at the second access point 12, to replace the whole of the Rx channel.
  • each switching diode which, in its conducting state (forward bias), is modeled as a resistance R diode of low value, in series with a small inductor L diode .
  • R diode In its off state (reverse bias), the diode is modeled as a diode capacitance.
  • the "Tx" channel is busy and the "Rx” channel is isolated.
  • the diodes D1 and D2 are both forward biased through the polarization means 15, and the diodes D3 and D4, are reverse biased through the polarization means 19 .
  • the figure 3 represents a modeling of the isolated Rx channel without taking into account the decoupling capacitors Cd2 and Cd3. Only Transmission lines L5, L6, L7 and L9 are shown and diodes D3 and D4 are shown as capacitors.
  • a high level of insulation on this channel is achieved thanks, on the one hand, to the effect of the shunt branch with the diode D4 blocked at its end, which brings back using the L5 and L7 transmission lines. equivalent of a short circuit at the access point 13, the operating frequency of the switch, and secondly, the resonant combination between the serial branch with the diode D3 blocked and the transmission line L9 common to the Tx and Rx channels, which provides, at this same frequency, the equivalent of an open circuit to the access point 12, when looking to the Rx channel.
  • the transmission line L8 in open circuit and connected to the access point 13, in parallel with the shunt branch, has no electrical influence insofar as this point is equivalent to a short circuit.
  • the transmission line L8 is therefore not represented on the figure 3 .
  • the electrical states, open circuit at point 12 and short circuit at point 13 which ensure an excellent level of insulation on the Rx channel, are thus directly controlled by an appropriate choice of the lengths of the transmission lines L5, L6, L7 and L9. These lengths all remaining well below ⁇ / 4.
  • the length of the transmission line L7 in open circuit, connected in parallel with the shunt diode D4 it constitutes a setting parameter which makes it possible to very simply fix the frequency for which the level of insulation is optimal. , by directly varying the length of the transmission line L7.
  • the figure 4 represents a modeling of the Tx pass channel without taking into account the decoupling capacitors Cd1 and Cd2. Only the transmission lines L1, L2, L3 and L4 are shown and the diodes D1 and D2 are represented as inductances.
  • the impedance brought back by the shunt branch at point 11 is close to that of an open circuit, but without being always strictly equal to a perfect open circuit.
  • the shunt branch is therefore more or less transparent with respect to the transmission of the signal on the Tx channel.
  • the diode D2 in the series branch it is also passing and in cascade with a transmission line of length L2, also fixed by the insulation constraints on the Rx channel.
  • Transmission lines L1 and L5 are identical. The same is true for lines L2 and L6, L3 and L7 as well as for L4 and L8. It is therefore not necessary to detail the operation of the case where the Rx channel is busy and the Tx channel is isolated. Just reverse the symmetrical elements.
  • the figure 5 represents an exemplary embodiment of an SPDT type device according to the diagram of the figure 1 , in micro-ribbon technology and intended to operate in X-band, that is to say around a central frequency of 9.35GHz.
  • the shapes of the micro ribbons are represented on a scale bearing the mark 20 on the figure 5 . It is understood that other forms of micro ribbons are possible to implement the invention.
  • the configuration of the switch is based on a particular combination of several transmission lines with two PIN type diodes on each of the channels. The lengths of all these transmission lines represent flexibility parameters facilitating the design of the device, in particular to achieve a relatively large switch operating bandwidth.
  • the diodes, capacitors and inductors are, for example, surface-mounted components on the substrate. It is possible to take into account the discontinuities of micro-ribbons intended for mounting surface-mounted components in modeling.
  • the largest transmission line length corresponds to that of the L9 common transmission line Tx and Rx channels, whose value is equal to 3.00mm.
  • the lengths of the other transmission lines of the device are all much smaller than ⁇ / 4, which makes it possible to increase the bandwidth of the device and to reduce the dimensions of its implantation on the substrate.
  • the transmission line L9 forms an axis of symmetry of the embodiment of the device on its substrate. In the example shown on the figure 5 the switch occupies only a total usable area of about 7.5 x 7 mm 2 , including the surface mounted components.
  • the electrical characteristics resulting from a simulation have given the following values: When the Tx channel is busy, the insertion losses are about 0.7 dB at the central operating frequency of 9.35 GHz, with an adaptation that is less at -30dB on Tx access and -32dB on access 12.
  • the level of isolation between the two Tx and Rx channels is, meanwhile, excellent since its value is about 60dB.
  • the electrical performance of the circuit remains correct over a bandwidth of relatively large width, which is of the order of 20% to 25% around the central frequency if we consider, for example, levels of adaptation not exceeding -20dB.
  • the figure 6 represents an exemplary embodiment of a device of the SPST type according to the diagram of the figure 2 .
  • this device is made in micro-ribbon technology on the same type of substrate. It is intended to operate in X band. The scale is also reported at mark 20. In a simulation of this device made using the same software, electrical performance is equivalent to that of the device of SPDT type.
  • the insertion losses are of the order of 0.7 dB at the center frequency of 9.35 GHz, with adaptation levels that remain below -30 dB as input and output of the SPST switch.
  • the electrical performances of the circuit remain correct on a bandwidth of more than 20% around the central frequency, with very little variation of insertion losses and adaptation levels which do not exceed -20 dB on this bandaged.
  • the switch occupies a total usable area of approximately 5.5 x 7 mm 2 , including the surface mounted components. We keep here the same compactness as in the device of the figure 5 .

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  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Electronic Switches (AREA)
  • Transceivers (AREA)
EP09173457A 2008-10-17 2009-10-19 Elektronische Umschaltvorrichtung für Hochfrequenzsignale Withdrawn EP2178152A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0805764A FR2937481B1 (fr) 2008-10-17 2008-10-17 Dispositif de commutation electronique pour signaux a haute frequence

Publications (1)

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EP2178152A1 true EP2178152A1 (de) 2010-04-21

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EP09173457A Withdrawn EP2178152A1 (de) 2008-10-17 2009-10-19 Elektronische Umschaltvorrichtung für Hochfrequenzsignale

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US (1) US8089328B2 (de)
EP (1) EP2178152A1 (de)
FR (1) FR2937481B1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5261119B2 (ja) * 2008-09-30 2013-08-14 双信電機株式会社 高周波スイッチ
JP2010252161A (ja) * 2009-04-17 2010-11-04 Hitachi Kokusai Electric Inc ダイオードスイッチ回路
US10027366B2 (en) * 2014-04-25 2018-07-17 Raytheon Company High power radio frequency (RF) antenna switch
RU174610U1 (ru) * 2017-05-03 2017-10-23 Денис Павлович Кравчук Коаксиальный двухканальный переключатель
CN109120250A (zh) * 2018-08-02 2019-01-01 西安电子工程研究所 一种Ka波段宽带开关网络
US11127737B2 (en) 2019-02-12 2021-09-21 Macom Technology Solutions Holdings, Inc. Monolithic multi-I region diode limiters
WO2020176878A1 (en) * 2019-02-28 2020-09-03 Macom Technology Solutions Holdings, Inc. Monolithic multi-i region diode switches
EP3886243A1 (de) * 2020-03-27 2021-09-29 Nokia Technologies Oy Hochfrequenzschaltvorrichtung

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0446050A2 (de) 1990-03-08 1991-09-11 Sony Corporation Signalsende-/Empfangsschaltungsanordnung
US5486797A (en) * 1994-08-04 1996-01-23 Uniden Corporation Integrated port selection circuit for high frequency signal
US20070120619A1 (en) * 2005-11-29 2007-05-31 Tdk Corporation RF switch

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0446050A2 (de) 1990-03-08 1991-09-11 Sony Corporation Signalsende-/Empfangsschaltungsanordnung
US5486797A (en) * 1994-08-04 1996-01-23 Uniden Corporation Integrated port selection circuit for high frequency signal
US20070120619A1 (en) * 2005-11-29 2007-05-31 Tdk Corporation RF switch

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
YOSHIHIRO TSUKAHARA ET AL: "60GHz High Isolation SPDT MMIC switches using shunt pHEMT resonator", MICROWAVE SYMPOSIUM DIGEST, 2008 IEEE MTT-S INTERNATIONAL, IEEE, PISCATAWAY, NJ, USA, 15 June 2008 (2008-06-15), pages 1541 - 1544, XP031343241, ISBN: 978-1-4244-1780-3 *

Also Published As

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FR2937481B1 (fr) 2011-03-25
FR2937481A1 (fr) 2010-04-23
US20100097120A1 (en) 2010-04-22
US8089328B2 (en) 2012-01-03

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