EP2062461B1 - Procédé de commande, dispositif de commande et procédé de fabrication du dispositif de commande - Google Patents

Procédé de commande, dispositif de commande et procédé de fabrication du dispositif de commande Download PDF

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Publication number
EP2062461B1
EP2062461B1 EP08706896.1A EP08706896A EP2062461B1 EP 2062461 B1 EP2062461 B1 EP 2062461B1 EP 08706896 A EP08706896 A EP 08706896A EP 2062461 B1 EP2062461 B1 EP 2062461B1
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Prior art keywords
radiation
current
emitting semiconductor
semiconductor component
operating current
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German (de)
English (en)
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EP2062461A1 (fr
Inventor
Thomas Zahner
Florian Dams
Peter Holzer
Stefan GRÖTSCH
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30—Driver circuits
    • H05B45/37—Converter circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/10—Controlling the intensity of the light
    • H05B45/14—Controlling the intensity of the light using electrical feedback from LEDs or from LED modules
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/20—Controlling the colour of the light

Definitions

  • the invention relates to a control method and a control device for operating at least one radiation-emitting semiconductor component.
  • the invention further relates to a method for producing the control device.
  • Radiation-emitting semiconductor components are used, for example, as light-emitting diodes, or in short: LEDs, for signaling purposes and increasingly also for illumination purposes.
  • LEDs of different colors in particular red, green or blue LEDs, are used for projecting color images.
  • the LEDs of different color alternately illuminate, in rapid succession, an array of micromirrors which are controlled in such a way that the desired color impression of a respective pixel results as a function of the respective time duration that the light of the respective LED falls on the respective pixel.
  • a viewer creates a colored picture impression, which can also include mixed colors, for example white.
  • the LEDs must be operated in each case in a pulse mode, that is, in rapid succession on and off again.
  • the object of the invention is to provide a control method, a control device and a method for producing the control device, the one or more Pulse operation of a radiation-emitting semiconductor device with a homogeneous radiation flux allows.
  • Similar LED control circuits are known from the patent documents US 6242870B1 and US 6356774B1 ,
  • the invention is characterized by a control method and a corresponding control device.
  • a pulse-shaped, during a pulse duration increasing, electrical operating current is generated.
  • the pulse duration does not include an ascending or falling edge of the electrical operating current, which is produced by switching the electrical operating current on or off.
  • the invention is based on the finding that the at least one radiation-emitting semiconductor component heats up during the pulse duration and as a result the radiation flux decreases during the pulse duration if the electrical operating current remains substantially constant during the pulse duration. By the increasing during the pulse duration operating current can be counteracted the drop in the radiation flux. As a result, reliable pulse operation of the at least one radiation-emitting semiconductor component is possible.
  • the electrical operating current is generated such that a radiation flux of the at least one radiation-emitting Semiconductor device during the pulse duration changed only within a predetermined Radfl Wegtoleranzbandes.
  • the electrical operating current is generated such that the radiation flux of the at least one radiation-emitting semiconductor component is substantially constant.
  • a pulse-shaped, electrical switching current is generated.
  • An electrical compensation current is generated, which is superimposed on the electrical switching current for generating the electrical operating current of the at least one radiation-emitting semiconductor component.
  • the electrical compensation current increases during the pulse duration. In this way, the electrical operating current rising during the pulse duration is very easily generated.
  • the advantage is that the electrical switching current and the electrical compensation current can be generated independently of each other.
  • the electrical switching current is for example very simple rectangular generated. This is superimposed with the rising electrical compensation current.
  • a profile of the electrical operating current or of the electrical compensation current is generated as a function of a sum over at least one summand of the form A * (1-exp (-t / tau)).
  • a time constant tau and a factor A are given in each case.
  • this is formed together with the at least one radiation-emitting semiconductor component as a common structural unit.
  • the control device forms a driver circuit for the at least one radiation-emitting semiconductor component.
  • the control device can be designed to be adjusted in accordance with the associated at least one radiation-emitting semiconductor component, so that the associated at least one radiation-emitting semiconductor component can be controlled particularly precisely and the resulting radiation flux is particularly reliable.
  • the invention is characterized by a method for producing the control device for operating at least one radiation-emitting semiconductor component by means of a pulse-shaped electrical operating current rising during a pulse duration.
  • a temporal profile of a thermal impedance is determined, which is representative of the at least one radiation-emitting semiconductor component.
  • a course to be set of the electrical operating current is determined.
  • the control device is further configured that the course of the operating current to be set is set in each case during the pulse duration.
  • the pulse duration does not include a rising or falling edge of the electrical operating current, which is produced by switching on or off the electrical operating current.
  • the temporal course of the thermal impedance of the at least one radiation-emitting semiconductor component is in particular easily detectable by measurement and is essentially dependent on the type of construction and the material.
  • the temporal course of the thermal impedance is not determined for each individual radiation-emitting semiconductor component, but is determined representatively for all or a subset of the radiation-emitting semiconductor components of the same type and the same material selection.
  • the control device is simple and inexpensive to produce in large quantities.
  • the course of the electrical operating current to be set is determined such that a radiation flux of the at least one radiation-emitting semiconductor component changes during the pulse duration only within a predetermined radiation flux tolerance band.
  • the course of the electrical operating current to be set is determined such that the radiation flux of the at least one radiation-emitting semiconductor component is substantially constant.
  • a voltage-current characteristic and / or a radiation flux-current characteristic and / or a radiation flux-junction temperature characteristic is determined, which is in each case representative of the at least one radiation-emitting semiconductor component.
  • the voltage-current characteristic and / or radiation flux-current characteristic and / or radiation flux junction temperature characteristic curve is the course to be set of the electrical operating current or the electric Compensating current determined.
  • the characteristic curves are generally known from, for example, manufacturer-provided characteristics of the at least one radiation-emitting semiconductor component or can be determined simply by measurement. By taking into account at least one of the characteristic curves, the course to be set of the electrical operating current or of the electrical compensation current can be determined precisely.
  • the course to be set of the electrical operating current or of the electrical compensation current is determined as a function of a sum over at least one summand of the form A * (1-exp (-t / tau)).
  • a time constant tau is determined in each case depending on the time characteristic of the thermal impedance.
  • a factor A is determined in each case depending on the determined voltage-current characteristic and / or the determined radiation flux-current characteristic and / or the determined radiation flux-junction temperature characteristic.
  • the respective time constant tau and / or the respective factor A can be determined, for example, by approximation to a predetermined course of the electrical operating current or of the electric compensation current, which is predetermined by a physical model of the at least one radiation-emitting semiconductor component.
  • the temporal profile of the thermal impedance and / or the determined voltage-current characteristic and / or the determined radiation flux-current characteristic and / or the determined radiation flux-junction temperature characteristic curve are preferably supplied to the physical model. In this way, the course to be set of the electrical operating current or the electrical Compensating current easily determined with the desired precision.
  • the pulse duration PD includes a duration for each pulse between a switch-on phase and a switch-off phase.
  • the radiant flux ⁇ e changes due to a switch-on process or a switch-off process.
  • the radiation flux ⁇ e should be substantially constant.
  • FIG. 1 1 left, shows a radiation flux-junction temperature characteristic in which a first radiation flux ratio is plotted against a junction temperature T j of a radiation-emitting semiconductor component 1.
  • the first radiation flux ratio is formed by a ratio of a radiation flux ⁇ e of the radiation-emitting semiconductor component 1 with respect to the radiation flux ⁇ e, which results at a predetermined junction temperature of 25 ° C.
  • the first radiation flux ratio can also be formed differently.
  • junction temperature Tj which may also be referred to as junction temperature
  • the radiation flux ⁇ e decreases.
  • the radiation flux ⁇ e during the respective pulse duration PD then generally decreases with increasing heating.
  • FIG. 1 bottom left shows a radiation flux-current characteristic of the radiation-emitting semiconductor device 1, in which a second radiation flux ratio against an electrical operating current If of the radiation-emitting Semiconductor device is applied.
  • the second radiation flux ratio is formed by a ratio of the radiation flux ⁇ e of the radiation-emitting semiconductor component 1 with respect to the radiation flux ⁇ e, which results at a predetermined operating current of 750 mA.
  • the second radiation flux ratio can also be specified differently. With increasing operating current If the radiation flux ⁇ e increases.
  • the radiation flux ⁇ e can not be arbitrarily increased by increasing the operating current If, and decreases even if the operating current If and the pulse width PD are too long or the duty cycle is too long.
  • a radiation flux-current-time diagram can be determined, the right in the FIG. 1 is shown.
  • a third radiation flux ratio is plotted against the operating current If and a time t.
  • the third radiation flux ratio is formed by a ratio of the radiation flux ⁇ e of the radiation-emitting Semiconductor device 1 with respect to a predetermined reference radiation flux ⁇ e0.
  • the predetermined reference radiation flux ⁇ e0 is predetermined, for example, as the radiation flux ⁇ e, which results at the predetermined junction temperature of 25 ° C and at the predetermined operating current of 750 mA.
  • the predetermined reference radiation flux ⁇ e0 can also be specified differently.
  • the third radiation flux ratio can also be formed differently.
  • the radiation flux-current-time diagram can be determined, for example, by a physical model of the radiation-emitting semiconductor component 1, which is in particular an electro-thermo-optical model in which the relevant electrical, thermal and optical variables are suitably linked to one another.
  • the electrical quantities include, for example, the operating current If, which flows through the radiation-emitting semiconductor component 1, and a voltage which drops across the radiation-emitting semiconductor component 1.
  • the thermal parameters include, for example, a thermal power as well as thermal resistances and thermal capacitances, which are predetermined by the materials and their arrangement in the radiation-emitting semiconductor component 1.
  • the optical quantities include, for example, the radiation flux ⁇ e. Also, other or other quantities may be considered in the physical model.
  • the physical model is preferably given the radiation flux-junction temperature characteristic, the radiant-flux-current characteristic, the profile of the thermal impedance Zth and optionally a voltage-current characteristic.
  • the voltage-current characteristic is the voltage that is above the radiation-emitting Semiconductor device drops, applied over the operating current If.
  • the characteristics and the time profile of the thermal impedance Zth can be determined, for example, by measuring.
  • the time profile of the thermal impedance Zth can be determined, for example, by a heating or cooling process and is dependent on the thermal resistances and the thermal capacitances of the radiation-emitting semiconductor component 1.
  • the characteristics and the course of the thermal impedance Zth are characteristic of the respective radiation-emitting semiconductor component 1.
  • FIG. 3 shows a section of the radiation flow-current-time diagram according to FIG. 1 in the event that the third radiation flux ratio is to be kept constant at a value of 1.
  • the operating current If to be set for the constant third radiation flux ratio results as a contour line in the radiation flux-current-time diagram or, in other words, as a section line in the plane of the third radiation flux ratio with the constant value 1. Accordingly, the operating current If also to be set be determined for a different value of the third radiation flux ratio.
  • the Radiation Flow-Current-Time Diagram in FIG. 3 It can be seen that the third radiation flux ratio can not be kept at the value of 1 for any length of time. A further increase in the operating current If causes no increase due to the associated heating of the radiation-emitting semiconductor component 1, but a reduction in the radiation flux ⁇ e.
  • the pulse duration PD must therefore be so short or the duty cycle be so small that the third radiation flux ratio and thus the radiation flux ⁇ e can be kept substantially constant by increasing the operating current If. It can also be provided to keep the third radiation flux ratio constant at a value other than 1, in particular at a lower value.
  • the result for the course of the operating current If to be set is a different cutting line or contour line.
  • the pulse duration PD may be longer or the duty cycle may be greater without the radiation flux ⁇ e decreasing during the pulse duration PD.
  • the profile of the operating current If to be set is determined, set and generated as an overlay, that is to say as a sum, of an electrical switching current Is and of an electric compensation current Ik, in order to compensate for the drop in the radiation flux .phi.e due to the heating during the respective pulse duration PD.
  • the electrical switching current Is is preferably provided rectangular and therefore corresponds to rectangular pulses.
  • the electrical switching current Is is preferably substantially constant during the pulse duration PD and serves for switching on the radiation-emitting semiconductor component 1 during the pulse duration PD and for otherwise switching off the radiation-emitting semiconductor component 1.
  • the compensation electric current Ik is provided so that it increases during the pulse duration PD, to compensate for the drop of the radiation flux ⁇ e due to the heating of the radiation-emitting semiconductor device 1. According to the electrical Compensation current Ik also increases the electrical operating current If during the pulse duration PD.
  • FIG. 4 shows a first current-time diagram in which the compensation current Ik, as it can be determined, for example, by means of the physical model, is plotted over the time t.
  • a profile of an approximated compensation current Ia is determined as an approximation of the profile of the compensation current Ik, which represents the course of the compensation current Ik to be set.
  • the profile of the approximated compensation current Ia is determined as a function of a sum over at least one summand of the form A * (1-exp (-t / tau)).
  • FIG. 4 shows the course of the approximated compensation current Ia for a single summand. By considering further summands, the precision of the approximation can be improved. In the example of FIG.
  • a time constant tau is determined in each case depending on the time characteristic of the thermal impedance Zth. If the number of summands equal to a number of thermal resistance capacitance elements or thermal RC elements of the radiation-emitting semiconductor component 1 is chosen, which characterize the course of the thermal impedance Zth, then the respective time constant tau corresponds to a respective time constant which is defined by one of the thermal RCs. limbs of the radiation-emitting semiconductor component 1 are predetermined. The thermal resistances and the thermal capacitances that form the thermal RC elements, and thus also the associated time constants, can be determined as a function of the course of the thermal impedance Zth.
  • a factor A is determined in each case depending on the voltage-current characteristic and / or the radiant-flux-current characteristic and / or the radiant-flux junction temperature characteristic. Due to the simplicity of the function of the individual summands, the profile of the approximated compensation current Ia can be generated very easily, for example by means of suitably designed electrical resistance-capacitance elements, which can also be referred to as electrical RC elements.
  • FIG. 5 shows a second current-time diagram with a measured course of the radiation flux ⁇ e, which is kept substantially constant by the increasing operating current If. Furthermore, the measured course of the operating current If is shown.
  • the radiation flux ⁇ e should remain substantially constant during the pulse duration PD.
  • the radiation flux ⁇ e during the pulse duration PD should be within a predetermined radiation flux tolerance band ⁇ etol, by which a maximum fluctuation range of the radiation flux ⁇ e is predetermined.
  • the width of the predetermined radiation flux tolerance band ⁇ etol can be specified according to the requirements.
  • the operating current If and, if necessary, the compensation current Ik or the approximated one must be correspondingly precise Compensation current Ia are generated.
  • the predetermined radiation flux tolerance band ⁇ etol can also be specified differently.
  • FIG. 6 shows a control device 2 and a radiation-emitting semiconductor device 1, which is electrically coupled to an output of the control device 2.
  • the control device is electrically coupled to an operating potential VB and a reference potential GND.
  • the control device 3 can be coupled to a control line, via the control device 2, for example, control signals can be supplied to trigger the respective pulse for the pulse operation of the radiation-emitting semiconductor device 1.
  • the control device 2 is formed, the pulse-shaped, during the pulse duration PD rising, electrical operating current If to generate for driving the radiation-emitting semiconductor device 1.
  • the control device 2 is designed as a driver circuit for the radiation-emitting semiconductor component 1.
  • control device 2 and the radiation-emitting semiconductor component 1 are preferably formed together as a common structural unit in a module 4. It can also be provided to operate two or more radiation-emitting semiconductor components 1 by the control device 2 and / or to arrange them in the module 4.
  • FIG. 7 shows a first flowchart of a method for manufacturing the control device 2.
  • the method begins in a step S1.
  • the time profile of the thermal impedance Zth is determined. This is preferably representative of a group of similar radiation-emitting semiconductor components 1 Similarity relates in particular to the design and the selection of materials.
  • the temporal courses of the thermal impedance Zth differ between different radiation-emitting semiconductor components 1 within the group only to a tolerable extent from each other. Thus, it may not be necessary to determine for each individual radiation-emitting semiconductor component 1 the time profile of the thermal impedance Zth.
  • the radiation-flux-junction temperature characteristic and / or the radiant-flux-current characteristic and / or the voltage-current characteristic are also determined in step S2, preferably representative of the group of radiation-emitting semiconductor components 1.
  • a step S3 may be provided, in which the control device 2 is formed so that the pulse-shaped, preferably rectangular electrical switching current Is can be generated.
  • a step S4 may be provided in which the course of the electrical compensation current Ik rising during the pulse duration PD is determined, optionally in the form of the approximated compensation current Ia. The determination takes place as a function of the detected course of the thermal impedance Zth. The determination preferably takes place by means of the physical model of the radiation-emitting semiconductor component 1, to which the detected profile of the thermal impedance Zth is predetermined. For this purpose, for example, the course of the desired contour line in the radiation flux-current-time diagram is determined and, if appropriate, the approximation of the approximated compensation current Ia is carried out. The approximation, for example, determines parameters that can be used to set the compensation current Ik. The Determining the course to be set of the compensation current Ik, however, can also be done differently.
  • a step S5 may be provided in which the operating current If to be set is determined as a superposition or sum of the switching current Is and the compensation current Ik.
  • the control device 2 is designed such that the operating current If to be set can be generated during operation. This can be done for example by forming an electrical circuit arrangement and suitable dimensioning of electrical RC elements.
  • a further possibility is, for example, to provide a function generator which is designed to provide on the output side a signal curve corresponding to the course of the operating current If to be set or of the compensation current Ik to be set.
  • the control device 2 may be formed differently in the step S6.
  • the method ends in a step S7. It can also be provided to determine the operating current If to be set depending on the determined characteristic of the thermal impedance Zth in a step S8, without the switching current Is and the compensation current Ik being determined for this purpose have to.
  • the step S8 may therefore optionally replace the steps S3 to S5.
  • FIG. 8 shows a second flowchart of a control method for operating the at least one radiation-emitting semiconductor element 1 by means of the pulse-shaped, during the pulse duration PD increasing, electrical operating current If.
  • the control method is preferably carried out by the control device 2.
  • the control method can be implemented, for example, in the form of the electrical circuit arrangement in the control device 2.
  • the electrical circuit arrangement comprises, for example, the electrical RC elements.
  • the control method may also be implemented as a program and stored in a memory included by the control device 2 or electrically coupled to the control device 2.
  • the control device 2 then comprises, for example, a computing unit which executes the program.
  • the arithmetic unit controls the digital-to-analog converter or another component of the control unit which is designed to set the course of the compensation current Ik or of the operating current If to be set.
  • the control process starts in a step S10.
  • a step S11 the pulse-shaped, preferably rectangular, electrical switching current Is is generated.
  • the compensating current Ik to be set is set, for example in the form of the approximated compensating current Ia, and generated accordingly.
  • the operating current If is superimposed or sum of the switching current Is and the compensation current Ik generated and output in a step S14 to the at least one radiation-emitting semiconductor device 1.
  • the control process ends in a step S15. It may also be provided to generate the increasing operating current If in a step S16, without the switching current Is and the compensation current Ik having to be generated for this purpose.
  • the step S16 may therefore optionally replace the steps S11 to S13.
  • control device 3 control line 4 module ⁇ e radiant flux ⁇ e0 predetermined reference radiation flux ⁇ etol given radiation flux tolerance band GND reference potential Ia approximated compensation current If operating current Ik compensating current is switching current PD pulse duration S1-16 step t Time tj Junction temperature VB operating potential Z th thermal impedance

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Claims (12)

  1. Procédé de commande, dans lequel, pour attaquer au moins un composant à semi-conducteur émetteur de rayonnement (1), un courant électrique d'attaque (If) impulsionnel augmentant pendant la durée d'une impulsion (PD) est généré.
  2. Procédé de commande selon la revendication 1,
    dans lequel le courant électrique d'attaque (If) est généré de manière à ce qu'un flux de rayonnement (Φe) de l'au moins un composant à semi-conducteur émetteur de rayonnement (1) ne varie pendant la durée de l'impulsion (PD) qu'à l'intérieur d'une bande de tolérance prédéterminée du flux de rayonnement (Φetol).
  3. Procédé de commande selon l'une quelconque des revendications 1 et 2, dans lequel
    - un courant électrique de commutation impulsionnel (Is) est généré et
    - un courant électrique de compensation (Ik) qui augmente pendant la durée de l'impulsion (PD) et qui est superposé au courant électrique de commutation (Is) est généré pour générer le courant électrique d'attaque (If) de l'au moins un composant à semi-conducteur émetteur de rayonnement (1).
  4. Procédé de commande selon l'une quelconque des revendications précédentes, dans lequel un profil du courant électrique d'attaque (If) ou du courant électrique de compensation (Ik) est généré en fonction d'une somme sur au moins un opérande de la forme : A * 1 - exp - t / tau ,
    Figure imgb0005
    dans lequel une constante de temps tau et un facteur A sont respectivement prédéterminés.
  5. Dispositif de commande conçu pour générer un courant électrique d'attaque (If) impulsionnel augmentant pendant la durée d'une impulsion (PD) pour attaquer au moins un composant à semi-conducteur émetteur de rayonnement (1).
  6. Dispositif de commande selon la revendication 5, conçu pour générer le courant électrique d'attaque (If) de manière à ce qu'un flux de rayonnement (Φe) de l'au moins un composant à semi-conducteur émetteur de rayonnement (1) ne varie pendant la durée de l'impulsion (PD) qu'à l'intérieur d'une bande de tolérance prédéterminée du flux de rayonnement (Φetol).
  7. Dispositif de commande selon l'une quelconque des revendications 5 ou 6, réalisé en association avec l'au moins un composant à semi-conducteur émetteur de rayonnement (1) en tant qu'unité structurelle commune.
  8. Procédé de fabrication d'un dispositif de commande (2) destiné à attaquer au moins un composant à semi-conducteur émetteur de rayonnement (1) au moyen d'un courant électrique d'attaque (If) impulsionnel augmentant pendant une durée d'impulsion (PD), dans lequel :
    - on détermine un profil temporel d'une impédance thermique (Zth) qui est représentative de l'au moins un composant à semi-conducteur émetteur de rayonnement (1),
    - en fonction du profil temporel déterminé de l'impédance thermique (Zth), on détermine un profil devant être réglé du courant d'attaque (If), et
    - le dispositif de commande (2) est conçu de telle manière que le profil à régler du courant électrique d'attaque (If) est respectivement réglé pendant la durée de l'impulsion (PD).
  9. Procédé de commande selon la revendication 8,
    dans lequel le profil à régler du courant électrique d'attaque (If) est déterminé de telle manière qu'un flux de rayonnement (Φe) de l'au moins un composant à semi-conducteur émetteur de rayonnement (1) ne varie pendant la durée de l'impulsion (PD) qu'à l'intérieur d'une bande de tolérance prédéterminée du flux de rayonnement (Φetol).
  10. Procédé selon l'une quelconque des revendications 8 ou 9,
    dans lequel
    - le dispositif de commande (2) est conçu pour générer un courant électrique de commutation impulsionnel (Is),
    - l'obtention du profil à régler du courant d'attaque (If) consiste à déterminer un profil à régler d'un courant électrique de compensation (Ik) augmentant pendant la durée de l'impulsion (PD), qui est superposé au courant électrique de commutation (Is) pour générer le courant électrique d'attaque (If), et
    - le dispositif de commande (2) est conçu de manière à régler respectivement le profil à régler du courant de compensation (Ik) pendant la durée de l'impulsion (PD).
  11. Procédé selon l'une quelconque des revendications 8 à 10, dans lequel
    - on détermine une caractéristique de tension-courant et/ou une caractéristique de flux de rayonnement-courant et/ou une caractéristique de flux de rayonnement-température de jonction qui est respectivement représentative de l'au moins un composant à semi-conducteur émetteur de rayonnement (1),
    - en fonction de la caractéristique de tension-courant et/ou de la caractéristique de flux de rayonnement-courant et/ou de la caractéristique de flux de rayonnement-température de jonction, on détermine le profil à régler du courant électrique d'attaque (If) ou du courant électrique de compensation (Ik).
  12. Procédé selon la revendication 11,
    dans lequel on détermine le profil à régler du courant électrique d'attaque (If) ou du courant électrique de compensation (Ik) en fonction d'une somme sur au moins un opérande de la forme : A * 1 - exp - t / tau ,
    Figure imgb0006
    dans lequel
    - on détermine respectivement une constante de temps tau en fonction du profil temporel de l'impédance thermique (Zth) et
    - on détermine respectivement un facteur A en fonction de la caractéristique de tension-courant déterminée et/ou de la caractéristique de flux de rayonnement-courant déterminée et/ou de la caractéristique de flux de rayonnement-température de jonction déterminée.
EP08706896.1A 2007-02-27 2008-02-15 Procédé de commande, dispositif de commande et procédé de fabrication du dispositif de commande Active EP2062461B1 (fr)

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DE102007009532A DE102007009532A1 (de) 2007-02-27 2007-02-27 Steuerverfahren, Steuervorrichtung und Verfahren zum Herstellen der Steuervorrichtung
PCT/DE2008/000290 WO2008104152A1 (fr) 2007-02-27 2008-02-15 Procédé de commande, dispositif de commande et procédé de fabrication du dispositif de commande

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EP2062461A1 EP2062461A1 (fr) 2009-05-27
EP2062461B1 true EP2062461B1 (fr) 2013-04-24

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US (1) US8519633B2 (fr)
EP (1) EP2062461B1 (fr)
JP (1) JP5502495B2 (fr)
KR (1) KR101486846B1 (fr)
CN (1) CN101675708B (fr)
DE (1) DE102007009532A1 (fr)
TW (1) TW200901827A (fr)
WO (1) WO2008104152A1 (fr)

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AT517625A1 (de) * 2015-09-07 2017-03-15 Mat Center Leoben Forschung Gmbh Verfahren und Vorrichtung zur Überwachung eines Halbleitermoduls

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CN101675708A (zh) 2010-03-17
KR20090115716A (ko) 2009-11-05
US8519633B2 (en) 2013-08-27
EP2062461A1 (fr) 2009-05-27
DE102007009532A1 (de) 2008-08-28
CN101675708B (zh) 2014-05-07
KR101486846B1 (ko) 2015-01-28
US20100090610A1 (en) 2010-04-15
TW200901827A (en) 2009-01-01
JP5502495B2 (ja) 2014-05-28
JP2010519774A (ja) 2010-06-03
WO2008104152A1 (fr) 2008-09-04

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