EP1995792A2 - Solarzelle und Herstellungsverfahren dafür - Google Patents

Solarzelle und Herstellungsverfahren dafür Download PDF

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Publication number
EP1995792A2
EP1995792A2 EP08251740A EP08251740A EP1995792A2 EP 1995792 A2 EP1995792 A2 EP 1995792A2 EP 08251740 A EP08251740 A EP 08251740A EP 08251740 A EP08251740 A EP 08251740A EP 1995792 A2 EP1995792 A2 EP 1995792A2
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EP
European Patent Office
Prior art keywords
solar cell
semiconductor layer
amorphous semiconductor
layer
holes
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Withdrawn
Application number
EP08251740A
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English (en)
French (fr)
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EP1995792A3 (de
Inventor
Yuji c/o Sanyo Electric Co. Ltd. Hishida
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Publication date
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Publication of EP1995792A2 publication Critical patent/EP1995792A2/de
Publication of EP1995792A3 publication Critical patent/EP1995792A3/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a solar cell and a manufacturing method of the same.
  • the solar cell includes a p-side electrode and an n-side electrode on its back surface side that is opposite to its light receiving surface side.
  • a solar cell is expected to be an alternative energy source because the solar cell can directly convert sun light, which is an unlimited source of clean energy, into electricity.
  • Such a solar cell has been desired to be thinner because of the need to cut down the manufacturing cost along with expansion of the solar cell market, as well as the need to reduce the amount of silicon use along with shortage in the stock of silicon material. Additionally, the solar cell has been desired to be more efficient in light conversion as well as to be thinner.
  • Most crystalline silicon solar cells include a single crystalline silicon substrate, on one main surface of which a p type region is formed, and on the other main surface of which an n type region is formed.
  • Collecting electrodes (such as extracting electrodes and line-shaped electrodes) are formed on the p type regions and the n type regions, in order to collect current. It is important for the collecting electrodes to enlarge its cross-sectional area, in order to improve conductivity and thus to reduce resistance loss. In addition, it is also important to reduce so-called shadow loss, which is caused by the presence of these collecting electrodes blocking an incident light.
  • a so-called back contact solar cell has been proposed.
  • p-doped regions and n-doped regions are alternately disposed on its back surface side that is opposite to its light receiving side.
  • the collecting electrodes are also formed on the back surface (see Japanese Patent Translation Publication No. 2006-523025 ).
  • the substrate provided with a through-hole includes a doped layer formed on its light receiving surface side, the doped layer extending continuously on the light receiving surface side and on a periphery of the through-hole on the back surface side through the inner wall surface of the through-hole (see Japanese Unexamined Patent Application Publication No. Hei 2-51282 ).
  • a solar cell including a so-called HIT (Heterojunction with Intrinsic Thin-layer) structure.
  • HIT Heterojunction with Intrinsic Thin-layer
  • a substantially intrinsic amorphous silicon layer is sandwiched between a single-crystalline silicon substrate and an amorphous silicon layer, so that defects at the interface are reduced, thereby improving characteristics of a heterojunction at the interface.
  • the solar cell with the HIT structure is capable of achieving both thinness and high efficiency, as compared with a crystalline silicon solar cell.
  • a collecting electrode is formed also on a light receiving surface side. Accordingly, further high efficiency is expected to be achieved in such a solar cell with the HIT structure, by reducing shadow loss with the collecting electrode.
  • an i type amorphous silicon layer and a p type amorphous silicon layer are sequentially stacked, by the CVD method, on a light receiving surface of an n type single-crystalline silicon wafer. Additionally, in the solar cell with the HIT structure, an i type amorphous silicon layer and an n type amorphous silicon layer are sequentially stacked, by the CVD method, on a back surface side of the n type single-crystalline silicon wafer.
  • a p type region and an n type region can be formed on a back surface side, by using a method disclosed in Japanese Patent Translation Publication No. 2006-523025 as cited above as an example.
  • the amorphous silicon layers are formed by the CVD method, and accordingly a step of forming a configuration to extract a current on the back surface side becomes more complicated.
  • a through-hole is provided in the single-crystalline silicon wafer.
  • the amorphous silicon layers formed on the light receiving surface side extend to a periphery of the through-hole on the back surface side through an inner wall of the through-hole. Accordingly, in a step of sequentially stacking amorphous silicon layers on the light receiving side, the amorphous silicon layers cover the periphery of the through-hole on the back surface side, causing unnecessary amorphous silicon layers to be deposited. For this reason, it is difficult to control formation of the amorphous silicon layers at the periphery of the through-hole on the back surface side.
  • the characteristics of a solar cell are adversely affected by the fact that such amorphous silicon layers cover the periphery of the through-hole on the back surface side.
  • the present invention has been proposed in view of the above-mentioned conventional problems, and aims to provide a solar cell and a manufacturing method of the same.
  • the solar cell can prevent an unnecessary semiconductor layer from being deposited at a periphery of a through-hole on a back surface side of a substrate, when a structure is formed so that a current collected on a light receiving side is extracted, through the through-hole, from the back surface.
  • a solar cell is mainly characterized by including: a semiconductor substrate; a first amorphous semiconductor layer of a first conductivity type, the layer formed on a first main surface of the semiconductor substrate; a second amorphous semiconductor layer of a second conductivity type, the layer formed on a second main surface of the semiconductor substrate; a plurality of through-holes which penetrate the first amorphous semiconductor layer, the semiconductor substrate, and the second amorphous semiconductor layer; an insulating layer which is formed continuously on an inner wall of each of the plurality of through-holes and on the second amorphous semiconductor layer; a plurality of line-shaped electrodes which are formed on a surface of the first amorphous semiconductor layer; a plurality of conductive layers which are formed in each of the plurality of through-holes, and which are electrically connected to each of the plurality of line-shaped electrodes; a first extracting electrode which is formed on the second amorphous semiconductor layer with the insulating layer in between, and which is electrical
  • the solar cell to be manufactured includes a semiconductor substrate having a first main surface and a second main surface that is provided opposite to the first main surface.
  • the manufacturing method is mainly characterized by including the steps of: (A) forming a first amorphous semiconductor layer of a first conductivity type, on the first main surface of the semiconductor substrate; (B) forming a second amorphous semiconductor layer of a second conductivity type, on the second main surface of the semiconductor substrate; (C) forming a plurality of through-holes that penetrate the first amorphous semiconductor layer, the semiconductor substrate, and the second amorphous semiconductor layer; (D) forming an insulating layer extending continuously on an inner wall of each of the plurality of through-holes and on the second amorphous semiconductor layer; (E) forming a plurality of line-shaped electrodes on the first amorphous semiconductor layer; (F) forming a plurality of conductive layer in each of the plurality of through-
  • Fig. 1 is a plane view showing a solar cell 1, as viewed from its light receiving surface side.
  • Fig. 2 is a plane view showing the solar cell 1, as viewed from its back surface side.
  • Fig. 3 is a cross-sectional view taken along the line A-A' of Fig. 2 .
  • the solar cell 1 includes a photoelectric conversion body 10 that is composed of; an n type single-crystalline silicon substrate 11; and a p type amorphous silicon layer 12 that is formed on a light receiving surface of the n type single-crystalline silicon substrate 11; and an n type amorphous silicon layer 13 that is formed on a back surface of the n type single-crystalline silicon substrate 11 (see Fig. 3 ).
  • the solar cell 1 has a so-called HIT structure.
  • a substantially intrinsic amorphous silicon layer is sandwiched between the n type single-crystalline silicon substrate 11 and the p type amorphous silicon layer 12, as well as between the n type single-crystalline silicon substrate 11 and the n type amorphous silicon layer 13.
  • the n type single-crystalline silicon substrate 11 may be mainly composed of polycrystalline silicon.
  • a p-n junction is formed at the interface between the n type single-crystalline silicon substrate 11 and the p type amorphous silicon layer 12.
  • a BSF (Back Surface Field) structure is formed at the interface between the n type single-crystalline silicon substrate 11 and the n type amorphous silicon layer 13.
  • multiple through-holes 14 are provided in the photoelectric conversion body 10.
  • the multiple through-holes 14 penetrate the p type amorphous silicon layer 12, the n type single-crystalline silicon substrate 11, and the n type amorphous silicon layer 13.
  • Each of the multiple through-holes 14 is provided at a predetermined position on a line-shaped electrode 21 that is formed on a light receiving surface of the photoelectric conversion body 10 (see Figs. 1 and 3 ).
  • An insulating layer 15 is formed on an inner wall surface of each of the multiple through-holes 14.
  • a conductive material 16 is filled in each of the multiple through-holes 14 through the insulating layer 15.
  • the conductive material 16, as shown in Fig. 1 is electrically connected to the line-shaped electrode 21 so as to play the role of passing a current, collected on the light receiving surface side of the photoelectric conversion body 10, through the back surface side.
  • various methods can be employed such as: a wet etching method using fluorine nitric acid and an alkaline solution; a dry etching method using gases of Cl 2 , CF 4 , BCl 3 , and the like; and a laser ablation processing method.
  • the laser ablation processing method can be preferably employed, because it is not necessary to form a resist pattern on the n type single-crystalline silicon substrate 11.
  • a laser having an output exceeding 1 J/cm 2 can be used.
  • Nd:YAG laser fundamental wave, second harmonic wave, and third harmonic wave
  • XeCl excimer laser KrF excimer laser
  • ArF excimer laser ArF excimer laser
  • a transparent conductive film (not illustrated) and the line-shaped electrode 21 are formed on the p type amorphous silicon layer 12 of the photoelectric conversion body 10.
  • there is no extracting electrode on the light receiving surface and the current collected by the line-shaped electrode 21 is led to the back surface side of the photoelectric conversion body 10 by the conductive material 16.
  • Fig. 1 to simplify the illustration, only 5 lines of the line-shaped electrodes 21 are shown. However, many lines of the line-shaped electrodes 21 are usually formed all over the surface of the solar cell 1.
  • the line-shaped electrodes 21 are, for example, formed by a process in which silver paste is screen-printed and cured at a temperature of a hundred and several tens degrees.
  • a transparent conductive film (not illustrated) and collecting electrodes are formed also on the back surface of the photoelectric conversion body 10.
  • the collecting electrodes on the back surface side include: line-shaped electrodes 22; and extracting electrodes 23 that are connected to the line-shaped electrodes 22.
  • line-shaped electrodes 22 are, for example, formed by a process in which silver paste is screen-printed and cured at a temperature of a hundred and several tens degrees. Note that on the back surface side of the solar cell 1, the number of the line-shaped electrodes 22 can be made larger than the number of the line-shaped electrodes 21, since it is not necessary to consider the reduction in the light receiving area on the back surface side.
  • extracting electrodes 23a, 23b, 23c, and 23d are formed on the back surface of the photoelectric conversion body 10.
  • each of the extracting electrodes 23a and 23c is connected to the conductive material 16 on the back surface side of the photoelectric conversion body 10.
  • the current collected by the line-shaped electrodes 21 is led, through the conductive material 16, to each of the extracting electrodes 23a and 23c.
  • the extracting electrodes 23b and 23d are connected respectively to the line-shaped electrodes 22.
  • the insulating layer 15 is formed, between the back surface of the photoelectric conversion body 10 and each of the extracting electrodes 23a and 23c, along each of the extracting electrodes 23a and 23c.
  • the solar cell 1 of this embodiment has the above-mentioned configuration.
  • the current collected by the line-shaped electrode 21 can be collected on the back surface of the photoelectric conversion body 10.
  • wiring members for connecting the solar cells 1 to each other can be provided only to the back surface side.
  • the p type amorphous silicon layer 12 is stacked, by the CVD method, on one main surface of the n type single-crystalline silicon substrate 11.
  • the n type amorphous silicon layer 13 is stacked, by the CVD method, on the other main surface of the n type single-crystalline silicon substrate 11 ( Fig. 4B ).
  • transparent conductive films are respectively formed on the p type amorphous silicon layer 12 and the n type amorphous silicon layer 13 so that the photoelectric conversion body 10 can be manufactured.
  • the multiple through-holes 14 are formed, by the laser ablation processing method or the like, in the photoelectric conversion body 10 ( Fig. 4C ).
  • the insulating layer 15 is formed, from the inner wall surface of each of the multiple through-holes 14 formed in the photoelectric conversion body 10, to a periphery of the opening provided in the back surface of the photoelectric conversion body 10 ( Fig. 4D ).
  • the insulating layer 15 is formed on a sufficiently enough area at the periphery of the opening on the back surface of the photoelectric conversion body 10 such that the conductive material 16, which is filled in the subsequent step, does not come into contact with the back surface of the photoelectric conversion body 10.
  • the insulating layer 15 is formed, on the back surface of the photoelectric conversion body 10, in a predetermined direction.
  • each of the multiple through-holes 14 ( Fig. 4E ).
  • the inner wall surface of each of the through-holes 14 and the conductive material 16 are insulated from each other by the insulating layer 15. Hence, it is possible to securely lead the current collected on the light receiving surface side of the solar cell 1 to the back surface side, according to each of the through-holes 14 and the conductive material 16 that is formed therein through the insulating layer 15.
  • the manufacturing method of the solar cell 1 has the following steps. First, the p type amorphous silicon layer 12 is stacked, by the CVD method, on the light receiving surface of the n type single-crystalline silicon substrate 11. Next, the n type amorphous silicon layer 13 is stacked, by the CVD method, so as to form the photoelectric conversion body 10. Then, the transparent conductive films are respectively formed on both the front and back surfaces of the resultant substrate. Thereafter, the multiple through-holes 14 are formed so as to penetrate all of the p type amorphous silicon layer 12, the n type single-crystalline silicon substrate 11, the n type amorphous silicon layer 13, and the transparent conductive films on the front and back surfaces.
  • an amorphous silicon layer is formed, by the CVD method, on one main surface (or the other main surface) of a substrate, after through-holes are firstly provided in the substrate.
  • an amorphous silicon layer forming the light receiving surface (or the back surface) is unnecessarily deposited at the periphery of the opening of each of the through-holes 14 on the back surface (or the light receiving surface).
  • an undesirable amorphous silicon layer formed in the peripheries of the through-holes 14 can be prevented from adversely affecting solar cell characteristics.
  • the solar cell 1 According to the above-mentioned manufacturing method of the solar cell 1, a configuration in which the currents collected on both the light receiving surface side and back surface side of the photoelectric conversion body 10 are collected on the back surface side, can be provided to the solar cell with the HIT structure.
  • a solar cell module is manufactured by using the solar cell 1, blockage of light due to the wiring members provided on the light receiving surface side, can be eliminated.
  • conversion efficiency of the solar cell 1 with the HIT structure can be further improved.
  • n type single-crystalline silicon substrate 11 is used as an example for the description of the above-mentioned embodiment; however, a substrate made of different semiconductor materials such as polycrystalline silicon and GaAs may be used, instead of single crystalline silicon. Additionally, with regard to a conductivity type of the semiconductor substrate, either of n type or p type may be used. Moreover, it is possible to adopt a configuration having a p-n junction and the BSF junction, respectively, on the back surface side and on the light receiving surface side of the substrate.

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
EP08251740A 2007-05-22 2008-05-19 Solarzelle und Herstellungsverfahren dafür Withdrawn EP1995792A3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007135807A JP2008294080A (ja) 2007-05-22 2007-05-22 太陽電池セル及び太陽電池セルの製造方法

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EP1995792A2 true EP1995792A2 (de) 2008-11-26
EP1995792A3 EP1995792A3 (de) 2011-04-20

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WO2010107665A1 (en) * 2009-03-20 2010-09-23 Sundiode, Inc. Stacked structure solar cell having backside conductive contacts
DE102009000279A1 (de) * 2009-01-16 2010-12-09 Q-Cells Se Solarzelle und Verfahren zur Herstellung einer Solarzelle
WO2011084053A3 (en) * 2010-01-06 2011-12-29 Stichting Energieonderzoek Centrum Nederland Solar panel module and method for manufacturing such a solar panel module
EP2472589A1 (de) * 2010-12-17 2012-07-04 LG Electronics Inc. Solarzelle und Verfahren zu ihrer Herstellung
US9324887B2 (en) 2009-04-27 2016-04-26 Kyocera Corporation Solar cell element, segmented solar cell element, solar cell module, and electronic appliance
CN108054220A (zh) * 2017-12-12 2018-05-18 浙江晶盛机电股份有限公司 一种硅异质结太阳能电池及其制备方法
CN114883451A (zh) * 2022-05-25 2022-08-09 中国科学院电工研究所 一种全背接触晶硅异质结太阳电池结构的制备方法

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US8115097B2 (en) * 2009-11-19 2012-02-14 International Business Machines Corporation Grid-line-free contact for a photovoltaic cell
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