EP1993108A1 - Composition de matériau doté d'une microstructure noyau-enveloppe utilisé pour un varistor - Google Patents

Composition de matériau doté d'une microstructure noyau-enveloppe utilisé pour un varistor Download PDF

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Publication number
EP1993108A1
EP1993108A1 EP20070108464 EP07108464A EP1993108A1 EP 1993108 A1 EP1993108 A1 EP 1993108A1 EP 20070108464 EP20070108464 EP 20070108464 EP 07108464 A EP07108464 A EP 07108464A EP 1993108 A1 EP1993108 A1 EP 1993108A1
Authority
EP
European Patent Office
Prior art keywords
material composition
varistor
glass
cored
core
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP20070108464
Other languages
German (de)
English (en)
Other versions
EP1993108B1 (fr
Inventor
Ching-Hohn Lien
Chen-Tsung Kuo
Jun-Nan Lin
Jie-An Zhu
Li-Yun Zhang
Wei-Chang Lien
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bee Fund Biotechnology Inc
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Bee Fund Biotechnology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bee Fund Biotechnology Inc filed Critical Bee Fund Biotechnology Inc
Priority to EP07108464.4A priority Critical patent/EP1993108B1/fr
Publication of EP1993108A1 publication Critical patent/EP1993108A1/fr
Application granted granted Critical
Publication of EP1993108B1 publication Critical patent/EP1993108B1/fr
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H01C7/112—ZnO type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H01C7/115—Titanium dioxide- or titanate type

Definitions

  • the present invention relates to a material composition for a varistor and more particularly, to a material composition that can be observed in a microstructure of a varistor wherein the material composition has a core-shell structure.
  • varistors or surge absorbers are conventionally used in high-frequency applications for protecting IC from getting damaged due to overvoltage.
  • a silicon diode provides surge absorbent ability relying on the PN interface.
  • a varistor made from this material disadvantageously possesses relatively higher breakdown voltage and inferior surge absorbent ability.
  • Varistors constructed of Fe 2 O 3 and BaTiO 3 have the surge absorbent ability relying on the interface between electrodes and ceramics. However, such varistors present inferior electrical properties and are unsuitable for making high-voltage components.
  • the surge absorbent ability of varistors made from ZnO, TiO 2 , SnO 2 or SrTiO 3 typically depends on the interface between semi-conductive grains and grain-boundary insulating layers.
  • the grain-boundary insulating layers are primarily composed of crystalline phases, such as crystalline phases of ⁇ -Bi 2 O 3 , Na 2 O or SrTiO 3 .
  • the disadvantage of such varistors is that the production of the grain-boundary insulating layers requires sintering at a relatively higher temperature.
  • the present invention has been accomplished under these circumstances in view. It is one objective of the present invention to provide a novel material composition for a varistor.
  • the disclosed material composition has a core-shell microstructure at least comprising a cored-structure made of a conductive or semi-conductive material and a shelled-structure made from a glass material to wrap the cored-structure.
  • varistors constructed from the disclosed material composition can be produced through sintering the material composition at a relatively lower temperature, which is typically between 600°C and 1,100°C.
  • the electrical properties of such varistors can be decided and designated through adjusting some particular parameters such as the size and properties of the grain of the cored-structure, the thickness and insulation resistance of the insulating layer of the shelled-structure, and the interval between two parallel electrodes and the overlap area of the electrode materials of the varistors.
  • the method comprises sintering a novel material composition having a core-shell microstructure at a relatively lower temperature.
  • the shelled-structure of the novel material composition is made from a glass material which has almost no reaction with the material of the cored-structure of the material composition, electrical properties of such varistors can be decided and designated by precisely controlling the size and properties of the grain of the cored-structure, the thickness and insulation resistance of the insulating layer of the shelled-structure, and the interval between two parallel electrodes and the overlap area of the electrode materials of the varistors.
  • the disclosed material composition 11 of the present invention has a core-shell microstructure which at least comprises a shelled-structure 12 and a cored-structure 14 wrapped by the shelled-structure 12.
  • the cored-structure 14 of the core-shell microstructure of the material composition 11 is made of a conductive or semi-conductive material
  • the shelled-structure 12 of the core-shell microstructure is made form a glass material that wraps the cored-structure 14.
  • the material composition 11 of the present invention may be in application of being manufactured into a ceramic component 20 for a varistor 10 through a standard ceramic processing.
  • the conductive material used as the cored-structure 14 of the core-shell microstructure of the material composition 11 of the present invention can be one of, a combination of two or more of or a combination of alloys of the metals selected from the group containing Fe, Al, Ni, Cu, Ag, Au, Pt and Pd.
  • the semi-conductive material used as the cored-structure 14 of the core-shell microstructure of the material composition 11 of the present invention can be one of, or a combination of two or more of the metals selected from the group containing ZnO, SrTiO 3 , BaTiO 3 , SiC, TiO 2 , SnO 2 , Si and GaAs.
  • the cored-structure 14 of the core-shell microstructure of the material composition 11 of the present invention can alternatively be made with a combination of the aforementioned conductive materials and semi-conductive materials.
  • the glass material used as the shelled-structure 12 of the core-shell microstructure of the material composition 11 of the present invention can be selected from the group containing silicate glass, boron glass, alumina-silica glass, phosphate glass and lead glass.
  • the material composition 11 of the present invention can be used to manufacture a varistor 10 which provides outstanding electrical properties through the manufacturing steps described below.
  • the present invention further provides a method for manufacturing a varistor whose voltage can be designated as needed.
  • the varistor 10 is constructed of a material composition 11 having a core-shell microstructure which at least comprises a cored-structure 14 wrapped by a shelled-structure 12.
  • the varistor 10 is made by sintering the material composition 11 at a relatively lower temperature.
  • the electrical properties of such varistors 10 can be decided and designated by precisely controlling the size and properties of the grain of cored-structure 14, the thickness and insulation resistance of the insulating layer of the shelled-structure 12, of the interval between two parallel electrodes 21 and the overlap area of the electrodes 21 of the varistors 10.
  • Silicon carbide powders sized between 0.6 ⁇ m and 1.0 ⁇ m are selected and soaked into a transparent organic solution primarily containing ethyl silicate. Trough pH control of the solution, glass containing in the composition can be evenly precipitated on the surface of the silicon carbide powders. Then the powders are dried and sintered at 600°C for 2 hours so that the silicon carbide powders coated with silicate glass can be obtained.
  • the sintered powders are mixed with appropriate binder, dispersant, plasticizer and organic solvent to form an organic paste.
  • the viscosity of the paste is carefully controlled to facilitate the control of the thickness of the green tape to be made.
  • doctor blade casting is conducted with the paste to make a green tape wherein the thickness of the green tape is made to 15 ⁇ 200 ⁇ m.
  • 6 layers of the green tape printed with inner electrodes are stacked in the manner that the inner electrodes alternately appear.
  • the resultant construction is added at the upper and lower end respectively with 5 layers of tape whereon no electrode is printed.
  • the construction is compacted at 70°C and 3000 1b/in 2 (psi) and cut at predetermined positions into green grains.
  • the green grains are further sintered in a sintering furnace at 900°C for 2 hours. Then the sintered grains are coated with silver paste at the appearing end of the inner electrodes and further treated at 800°C for 0.5 hour. Thereby, a multiplayer varistor 10 of Fig. 1 sized 1.0 x 0.5 x 0.5 is obtained.
  • V1mA breakdown voltage
  • ⁇ nonlinear exponent
  • iL leakage current
  • ESD tolerance ESD tolerance
  • Table 1 The measured results are shown in Table 1 and Table 2, wherein Table 1 describes the effect of the amount of the glass on the properties of the varistor 10. According to the results of samples 1 to 5, the larger amount of the glass leads the higher breakdown voltage (V1mA), the higher nonlinear exponent ( ⁇ ) and the lower leakage current (iL) of the varistor 10.
  • Table 2 shows the electrical properties of the varistors 10 made from different thickness of the green tapes sintered at 900°C. It is observed that the breakdown voltages (V1mA) of the varistors 10 are proportioned to the thickness of the green tapes. The thicker the green tape is, the higher breakdown voltage (V1mA) of the resultant varistor 10 has. Table 2 Sample Thickness of the tape ( ⁇ m) V1mA(V) ⁇ iL ( ⁇ A) ESD Tolerence (8KV) 6 20 80.4 11.78 63.5 Pass 7 35 147.2 13.62 57.8 Pass 8 50 235.1 15.08 67.9 Pass 9 70 301.2 14.88 62.3 Pass
  • semi-conductive strontium titanate powders are implemented as the material of the cored-structure of the previous Example 1, while boron glass is used as the material of the shelled-structure.
  • the semi-conductive strontium titanate powders are coated with the boron glass and the chip component fabrication is conducted. Then doctor blade casting is conducted to make a green tape of 50 ⁇ m thickness and the green tape is made into green grains each having two layers of inner electrodes. The construction is sintered at 850°C for 2 hours to obtain a multiple-layered varistor 10.
  • the varistor 10 has electrical properties as shown in Table 3 and can pass the electrostatic discharge immunity test of 8KV.
  • Table 3 Sample Thickness of the tape ( ⁇ m) V1mA(V) ⁇ iL( ⁇ A) ESD Tolerence (8KV) 10 50 261.8 8.76 2.9 Pass
  • metal nickel powders are implemented as the material of the cored-structure of the previous Example 1, while silicate glass is used as the material of the shelled-structure.
  • the metal nickel powders are coated with the silicate glass and the chip component fabrication is conducted.
  • doctor blade casting is conducted to make a green tape of 30 ⁇ m thickness and the green tape is made into green grains each having two layers of inner electrodes.
  • the construction is sintered at 800°C for 2 hours to obtain a multiple-layered varistor 10.
  • the varistor 10 has electrical properties as shown in Table 4 and can pass the electrostatic discharge immunity test of 8KV.
  • Table 4 Sample Thickness of the tape ( ⁇ m) V1mA(V) ⁇ iL ( ⁇ A) ESD Tolerence (8KV) 11 30 241.8 - 1.22 Pass
  • metal copper powders are implemented as the material of the cored-structure of the previous Example 1, while silicate glass is used as the material of the shelled-structure.
  • the metal copper powders are coated with the silicate glass and the chip component fabrication is conducted.
  • doctor blade casting is conducted to make a green tape of 50 ⁇ m thickness and the green tape is made into green grains each having two layers of inner electrodes.
  • the construction is sintered at 700°C for 2 hours to obtain a multiple-layered varistor 10.
  • the varistor 10 has electrical properties as shown in Table 5 and can pass the electrostatic discharge immunity test of 8KV.
  • Table 5 Sample Thickness of the tape ( ⁇ m) V1mA(V) ⁇ iL( ⁇ A) ESD Tolerence (8KV) 12 50 548.5 - 0.67 Pass
  • V1mA breakdown voltage
  • Table 6 Sample Thickness of the tape ( ⁇ m) V1mA(V) ⁇ iL ( ⁇ A) ESD Tolerence (8KV) 13 10.0 285.1 17.58 26.8 Pass 14 2.5 254.3 17.24 27.9 Pass 15 0.8 230.6 16.04 28.6 Pass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)
EP07108464.4A 2007-05-18 2007-05-18 Composition de matériau doté d'une microstructure noyau-enveloppe utilisé pour un varistor Not-in-force EP1993108B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP07108464.4A EP1993108B1 (fr) 2007-05-18 2007-05-18 Composition de matériau doté d'une microstructure noyau-enveloppe utilisé pour un varistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP07108464.4A EP1993108B1 (fr) 2007-05-18 2007-05-18 Composition de matériau doté d'une microstructure noyau-enveloppe utilisé pour un varistor

Publications (2)

Publication Number Publication Date
EP1993108A1 true EP1993108A1 (fr) 2008-11-19
EP1993108B1 EP1993108B1 (fr) 2017-03-01

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101159241B1 (ko) * 2010-09-03 2012-06-25 에스에프아이 일렉트로닉스 테크날러지 인코어퍼레이티드 고온 작동을 위한 산화아연 서지 어레스터

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3725836A (en) * 1971-05-21 1973-04-03 Matsushita Electric Ind Co Ltd Thick film varistor and method for making the same
EP0115050A1 (fr) * 1982-12-24 1984-08-08 Kabushiki Kaisha Toshiba Varistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3725836A (en) * 1971-05-21 1973-04-03 Matsushita Electric Ind Co Ltd Thick film varistor and method for making the same
EP0115050A1 (fr) * 1982-12-24 1984-08-08 Kabushiki Kaisha Toshiba Varistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101159241B1 (ko) * 2010-09-03 2012-06-25 에스에프아이 일렉트로닉스 테크날러지 인코어퍼레이티드 고온 작동을 위한 산화아연 서지 어레스터

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Publication number Publication date
EP1993108B1 (fr) 2017-03-01

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