EP1977452A1 - Compositions comprenant des structures de domaines de phase separes de maniere reglee - Google Patents

Compositions comprenant des structures de domaines de phase separes de maniere reglee

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Publication number
EP1977452A1
EP1977452A1 EP20070709803 EP07709803A EP1977452A1 EP 1977452 A1 EP1977452 A1 EP 1977452A1 EP 20070709803 EP20070709803 EP 20070709803 EP 07709803 A EP07709803 A EP 07709803A EP 1977452 A1 EP1977452 A1 EP 1977452A1
Authority
EP
European Patent Office
Prior art keywords
domain
reaction product
chemical reaction
composition
precursor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP20070709803
Other languages
German (de)
English (en)
Inventor
Billy J. Stanbery
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HelioVolt Corp
Original Assignee
HelioVolt Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/330,905 external-priority patent/US7767904B2/en
Priority claimed from US11/331,422 external-priority patent/US20070160763A1/en
Priority claimed from US11/331,431 external-priority patent/US8084685B2/en
Application filed by HelioVolt Corp filed Critical HelioVolt Corp
Publication of EP1977452A1 publication Critical patent/EP1977452A1/fr
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Definitions

  • Embodiments of the invention relate generally to the field of materials. More particularly, embodiments of the invention relate to methods of controlling formation of a segregated phase domain structure within a chemical reaction product, compositions of matter including such a segregated phase domain structure, and machinery having a complex tool relief for making such compositions.
  • CIS based PV Prior art copper indium selenide based photovoltaics, sometimes called CIS based PV, are known to those skilled in the art of solar cells. CuInSe is the most reliable and best- performing thin film material for generating electricity from sunlight. A concern with this technology is that raw material supply constraints are going to arise in the future as the production of CIS PV increases. For instance, indium does not occur naturally in high concentration ores. Typically, indium is obtained from the discarded tailings of zinc ores. As the production of CIS PV approaches the large scale range of from approximately 10 gigawatts/year to approximately 100 gigawatts/year, indium supply constraints will become manifest. These supply constraints will lead to increased costs. Further, as the production of CIS PV increases, other raw material supply constraints will also emerge.
  • CIS PV thin films What is required is a solution that reduces the amount of raw materials needed per watt of generating capacity in CIS PV thin films.
  • One approach to reducing the amount of raw materials needed is to reduce the thickness of the CIS PV thin film material.
  • the inherent absorption coefficient of CIS is very high (i.e., approximately 10 5 cm "1 ). This means that most of the incident light energy can be absorbed with a very thin film of CIS.
  • the use of a back surface reflector can further reduce the thickness necessary to absorb most of the incident light energy. While prior art CIS PV products are typically at least about 2 microns thick, it is important to appreciate that 0.25 microns is theoretically sufficient for a CIS PV thin film located on a back surface reflector to absorb most the incident light energy.
  • An advantage of field assisted simultaneous synthesis and transfer technology is that it works better as the precursor stack becomes thinner.
  • the vapor pressure of selenium in a CIS based reaction product layer is a function of temperature.
  • the pressure needed to contain the selenium is a function of the temperature required for the process reaction. It is important to appreciate that the voltage, if utilized, to achieve a desired pressure goes down as the thickness goes down. As the required voltage is reduced, the physical demands on the system (e.g., stress on the dielectric) go down. Therefore, as the precursor stack is made thinner, the voltage needed to generate a given pressure goes down; which reduces stress on the dielectric (for instance a release layer), thereby expanding the scope of materials that can be utilized as a dielectric.
  • Another advantage of field assisted simultaneous synthesis and transfer technology is that it enables a lower thermal budget.
  • the lower thermal budget is a result of higher speed of the field assisted simultaneous synthesis and transfer technology compared to alternative approaches such as (physical or chemical) vapor deposition.
  • the quality of the resulting products can also be improved.
  • the lower thermal budget enabled by the use of field assisted simultaneous synthesis and transfer technology leads to the reduction of undesirable reactions, such as between selenium and molybdenum at the interface between the CIS absorber and the back side metal contact. The reduction of this undesirable reaction results in reduced tarnishing which in-turn results in higher back surface reflectivity.
  • CIS thin films made by conventional techniques contain domains resulting from fluctuations in chemical composition 0"2 ' 5) .
  • Undesirable recombination of charge carriers takes place at the boundaries between the nanodomains within such a CIS based PV absorber. Therefore, what is also required is a solution to controlling, and ideally optimizing, the boundaries between, these nanodomains with varying chemical compositions.
  • the requirements of reduced raw materials requirements, reduced thickness and controlled boundaries between nanodomains referred to above have not been fully met. What is, therefore, needed is a solution that simultaneously solves all of these problems.
  • a process comprises: providing a first precursor on a first substrate; providing a second precursor on a second substrate; contacting the first precursor and the second precursor; reacting the first precursor and the second precursor to form a chemical reaction product; and moving the first substrate and the second substrate relative to one another to separate the chemical reaction product from at least one member selected from the group consisting of the first substrate and the second substrate, characterized in that, to control formation of a segregated phase domain structure within the chemical reaction product, a constituent of at least one member selected from the group consisting of the first precursor and the second precursor is provided in a quantity that substantially regularly periodically varies from a mean quantity with regard to basal spatial location.
  • a machine comprises: a first substrate; and a second substrate coupled to the first substrate, characterized in that, to control formation of a segregated phase domain structure within a chemical reaction product by controlling an amount of a constituent of a precursor that is present per unit surface area, at least one member selected from the group consisting of the first substrate and the second substrate defines a substantially regularly periodically varying relief with respect to basal spatial location.
  • a composition of matter comprises: a chemical reaction product defining a first surface and a second surface, characterized in that the chemical reaction product includes a segregated phase domain structure including a plurality of domain structures, wherein at least one of the plurality of domain structures includes at least one domain that extends from a first surface of the chemical reaction product to a second surface of the chemical reaction product.
  • FIGS. 1 A-1 C are elevational views of pairs of substrates where at least one of each pair defines a substantially regularly periodically varying relief with respect to basal spatial location, representing an embodiment of the invention.
  • FIGS. 2A-2C are elevational views of pairs of substrates where at least one of each pair carriers a constituent of a precursor in a quantity that substantially regularly periodically varies from a mean quantity with regard to basal spatial location.
  • FIGS. 3A-3D are plan views of segregated phase domain structures including a segregated phase domain hexagonal array, representing an embodiment of the invention.
  • FIGS. 3E-3H are plan views of segregated phase domain structures including a segregated phase domain orthogonal array, representing an embodiment of the invention.
  • FIGS. 4A-4C are schematic elevational views of a process of controlling formation of a segregated phase domain structure using a back surface contact that defines a substantially regularly periodically varying relief (and electric field strength) with respect to basal spatial location, representing an embodiment of the invention.
  • FIGS. 5A-5C are schematic elevational views of a process of controlling formation of a segregated phase domain structure using a tool that defines a substantially regularly periodically varying electric field strength with respect to basal spatial location, representing an embodiment of the invention.
  • FIGS. 6A-6C are schematic elevational views of a process of controlling formation of a segregated phase domain structure using a tool and a back surface contact both of which define a substantially regularly periodically varying relief with respect to basal spatial location, representing an embodiment of the invention.
  • FIGS. 6D-6F are schematic elevational views of a process of controlling formation of a segregated phase domain structure using a back surface contact which defines a substantially regularly periodically varying relief with respect to basal spatial location, representing an embodiment of the invention.
  • FIGS. 7A-7C are schematic views of a hexagonal domain structure, representing an embodiment of the invention. DESCRIPTION OF PREFERRED EMBODIMENTS
  • the context of the invention can include controlling formation of a segregated phase domain structure within a chemical reaction product.
  • the context of the invention can include machinery to control formation of a segregated phase domain structure by controlling an amount of a constituent of a precursor that is present per unit surface area.
  • the context of the invention can include a chemical reaction product that includes a segregated phase domain structure including a plurality of domain structures.
  • the segregated phase domain structure includes a plurality of domain structures.
  • the invention can include domain structures that define percolation networks.
  • the invention can include domain structures that minimize path length required for charge carrier collection (e.g., columnar domains).
  • At least one of the plurality of domain structures can include at least one domain that extends from a first surface of the chemical reaction product to a second surface of the chemical reaction product.
  • the invention can include domain structures that minimize boundary surface area (e.g., circular columnar domains) and/or minimize boundary surface along preferred path directions (e.g.. fluted circular columnar domains).
  • the invention can include the use of sodium to make boundaries between domain structures less fuzzy (i.e., more discrete).
  • the invention can include a characteristic length scale for the (intradomain) size of the domains (e.g., "r” for internal radius).
  • the invention can include a characteristic length scale for the (interdomain) size of the separation(s) between domains (e.g., "d” for center-to- center distance).
  • the ratio of the characteristic domain size to characteristic domain separation the invention enables control of a relative volume of two (or more) domains.
  • the invention enables control of the ratio of junction volume to the bulk field free volume in two (or more) phase domains.
  • the invention can include controlling the spacing of the domains to control a ratio of domains and/or phases with regard to volume or other parameter.
  • the invention can include a characteristic size distribution of the domains.
  • Embodiments of the invention can be characterized by a narrow size distribution of "r" (i.e., monomodal).
  • embodiments of the invention can be characterized by a size distribution in which 80% of the instances of a domain are characterized by a size that is within 20% (plus or minus) of a scalar value r. It can be advantageous if 90% of the instances of a domain are characterized by a size that is within 10% (plus or minus) of a scalar value "r.”
  • embodiments of the invention can be characterized by a plurality of narrow size distributions of "r” (i.e., multimodal). Preferred embodiments of the invention avoid random size distributions (e.g., of "r").
  • the invention can include domain structures of a size that are from approximately 1nm to approximately 1um, preferably from approximately 5nm to approximately 100nm.
  • the invention can include domain structures that repeat on multiples of a crystallographic unit cell lattice parameter of from approximately 1 nm to approximately 200nm, preferably from approximately 5nm to approximately 50nm. Nevertheless, it is important to appreciate that the exact size (magnitude) of the domains is not important.
  • the invention can include a characteristic size distribution of the domain separations.
  • Embodiments of the invention can be characterized by a narrow size distribution of "d" (i.e., monomodal).
  • embodiments of the invention can be characterized by a separation distribution in which 80% of the instances of a domain are characterized by a separation that is within 20% (plus or minus) of an integer multiple of a scalar value d. It can be advantageous if 90% of the instances of a domain are characterized by a separation that is within 10% (plus or minus) of an integer multiple of a scalar value "d.”
  • embodiments of the invention can be characterized by a plurality of narrow separation distributions of "r” (i.e., multimodal). Preferred embodiments of the invention avoid random separation distributions (e.g., of "d").
  • the invention can include domain structures that repeat (are spaced) on a period of from approximately 1 nm to approximately 1 um, preferably from approximately 5nm to approximately 100nm.
  • the invention can include domain structures that repeat on multiples of a period of from approximately 1nm to approximately 200nm, preferably from approximately 5nm to approximately 50nm. Nevertheless, it is important to appreciate that the exact size (magnitude) of the domain separation(s) is not important.
  • the invention can include domain structures that define 6 fold, 4 fold or other symmetry, in two or three dimensions. However, it is important to appreciate that the exact symmetry is not important.
  • the invention can include domain structures that define short range order.
  • the invention can include domain structures that define long range order.
  • FIGS. 7A-7B relate to a first order approximation for minimizing total recombination R for a hexagonal domain structure array having circular columns, assuming the interabsorber junction region is narrow compared to the scalar dimensions r and d.
  • a chemical reaction product 710 defining a first surface 712 and a second surface 714 is coupled to a back contact 720.
  • the chemical reaction product 710 includes a segregated phase domain structure including a cylindrical domain structure 701 and a matrix domain structure 702.
  • the matrix domain structure extends from the first surface 712 of the chemical reaction product 710 to the second surface 714 of the chemical reaction product 710.
  • the total volume of each hexagonal cell of height ⁇ 0 is given by
  • the total recombination R (per cell) equals the recombination in cylindrical domain region one R 1 plus the recombination in hexagonal matrix domain region two R 2 plus the recombination at the interface of regions one and region two Rj.
  • the recombination in hexagonal matrix domain region two is given by
  • R 2 P2 (((3) I/2 d 2 ⁇ 0 )/2 - (to - ⁇ O ⁇ r 2 ) where p 2 is the bulk recombination rate in hexagonal matrix domain region two.
  • ⁇ ⁇ is the interface (junction) surface recombination velocity.
  • the recombination rates Pi and p 2 , and the recombination velocity ⁇ ; are materials properties that depend on compositions and processing histories.
  • FIG. 7C relates to a second order approximation for minimizing total recombination R for a hexagonal domain structure array having circular columns, where the junction width is not small compared to r and/or d.
  • the total junction width is equal to the cylindrical domain junction width plus the matrix domain junction width
  • the total recombination R (per cell) equals the recombination in the cylindrical field-free domain region one R 1 plus the recombination in the hexagonal matrix field-free domain region two R 2 plus the recombination in the annular space charge recombination region one Ri j pJus the recombination in the annular space charge recombination region two R 2j .
  • R R, + R 2 + Rij+ R 2J
  • Ri p ⁇ ((t ⁇ - x ⁇ - Ij)JcCr - ij) 2 ) where pi is the bulk recombination rate in cylindrical field-free domain region one.
  • the recombination in hexagonal matrix field-free domain region two is given by
  • R 2 p 2 (((3) I/2 d 2 ⁇ 0 )/2 - (T 0 - ⁇ , + d j ) ⁇ (r + d j ) 2 )
  • p 2 is the bulk recombination rate in hexagonal matrix field-free domain region two. The recombination in the annular space charge recombination region one is given by
  • Ri j Pij((*o - ⁇ i) ⁇ r 2 - ( ⁇ 0 - T
  • the recombination rates pi, p 2 , pi, and ⁇ 2j are materials properties that depend on compositions and processing histories.
  • the invention can include substantially regularly periodically increasing an amount of a precursor by planar coating a substantially regularly periodically relieved surface.
  • a first substrate 102 includes a substantially regularly periodically relieved surface 104.
  • a first precursor 106 is coupled to the substantially regularly periodically relieved surface 104. It can be appreciated that there is relatively more of the first precursor 106 corresponding to a basal spatial location centered at a relief cell center position 108 compared to a relief cell edge position 110.
  • a second precursor 114 is coupled to a second substrate 112. The first substrate 102 and the second substrate 112 are movable relative to one another.
  • a first precursor 126 is coupled to a first substrate 122.
  • a second substrate 132 includes a substantially regularly periodically relieved surface 124.
  • a second precursor 134 is coupled to the substantially regularly periodically relieved surface 124. It can be appreciated that there is relatively more of the second precursor 134 at a relief cell center position 138 compared to a relief cell edge position 130.
  • a first substrate 142 includes a substantially regularly periodically relieved surface 144.
  • a first precursor 146 is coupled to the substantially regularly periodically relieved surface 144. It can be appreciated that there is relatively more of the first precursor 146 at a relief cell center position 158 compared to a relief cell edge position 150.
  • a second substrate 152 includes a substantially regularly periodically relieved surface 145.
  • a second precursor 154 is coupled to the substantially regularly periodically relieved surface 145. It can be appreciated that there is relatively more of the second precursor 154 at a relief cell center position 159 compared to a relief cell edge position 151.
  • the first substrate 142 and the second substrate 152 are movable relative to one another. When the first precursor 146 and the second precursor 154 are contacted and heated (optionally under the influence of an electric field) the resulting reaction product will be compositionally rich in the constituents of the first precursor at a location corresponding to the relief cell center position 158 and will be compositionally rich in the constituents of the second precursor at a location corresponding to the relief cell center position 159.
  • the invention can include substantially regularly periodically increasing an amount of a precursor by previously depositing a plurality of constituent sources that include an excess of the constituent relative to a mean quantity.
  • a first substrate 202 includes a plurality of substantially regularly periodically located constituent sources 204.
  • a first precursor 206 is coupled to the sources 204. It can be appreciated that there is relatively more of the first precursor 206 in positions 208 without the sources 204 compared to positions 210 with the sources 204.
  • a second precursor 214 is coupled to a second substrate 212. The first substrate 202 and the second substrate 212 are movable relative to one another.
  • a first precursor 226 is coupled to a first substrate 222.
  • a second substrate 232 includes a plurality of substantially regularly periodically located constituent sources 224.
  • a second precursor 234 is coupled to the sources 224. It can be appreciated that there is relatively more of the second precursor 234 at a center position 238 compared to edge positions 230.
  • the first substrate 222 and the second substrate 232 are movable relative to one another.
  • a first substrate 242 includes a plurality of substantially regularly periodically located constituent sources 244.
  • a first precursor 246 is coupled to the plurality of substantially regularly periodically located sources 244. It can be appreciated that there is relatively more of the first precursor 246 at a center position 258 compared to an edge position 250.
  • a second substrate 252 includes a plurality of substantially regularly periodically located sources 245.
  • a second precursor 254 is coupled to the plurality of substantially regularly periodically located sources 245.
  • the second precursor 254 there is relatively more of the second precursor 254 at center position 259 compared to an edge position 251.
  • the first substrate 242 and the second substrate 252 are movable relative to one another.
  • the resulting reaction product will be compositionally rich in the constituents of the first precursor at a location corresponding to the center position 258 and will be compositionally rich in the constituents of the second precursor at a location corresponding to the center position 259.
  • the relieved surface and/or the constituent sources can be located across a surface to define a hexagonal symmetry, an orthogonal symmetry, or other symmetry and/or space group.
  • the surface relief or sources can define a hexagonal grid 310.
  • reaction products 320 whose location correspond to the grid 310 can be columnar (to facilitate charge carrier transport) with a circular circumference.
  • the ratio of matrix domain area to columnar domain area can be controlled by locating the reaction product columns 330 closer to one another (e.g., so that the columns are just touching). Referring to FIG.
  • the ratio of matrix domain to columnar domain can lowered still further by locating the reaction product columns 340 so that they overlap.
  • the surface relief or sources can define an orthogonal grid 350.
  • reaction products 360 whose location correspond to the grid 350 can be columnar (to facilitate charge carrier transport) with a circular circumference.
  • the ratio of matrix domain to columnar domain can be controlled by locating the reaction product columns 370 closer to one another (e.g., so that the columns are just touching).
  • the ratio of matrix domain to columnar domain can lowered still further by locating the reaction product columns 380 so that they overlap.
  • this example relates to an embodiment of the invention including planar coating of a first precursor 410 on a surface of a tool 416 where a first precursor constituent is substantially regularly periodically increased by previously depositing a plurality of constituent sources 412 that include an excess of the constituent relative to a mean quantity.
  • This embodiment also includes the use of a switchable (e.g., on-off), modulatable (e.g., field strength), reversible (e.g., polarity), electric field.
  • a first precursor 410 includes sources 412.
  • a second precursor 420 is provided on a back contact 422.
  • the first precursor 410 and the second precursor 420 are contacted and heated, and an electric field is applied.
  • the electric field tends to drive at least some of the copper ions away from the tool.
  • the field as depicted exerts a force on the copper that is opposite the direction of chemical drive on the copper, and can be termed reverse bias (inapposite to forward bias).
  • the direction of the field can selected, the magnitude of the field can be controlled and the field can be switched on and/or off.
  • the sources 412 form indium-gallium rich beta domains. Referring to FIG.4C, after the electric field is removed, the tool is separated and the domains remain intact.
  • Example 2 Referring to FIGS. 5A-5C, this example relates to an embodiment of the invention including planar coating of a first precursor on a surface of a tool where a first precursor constituent is substantially regularly periodically increased by previously depositing a plurality of constituent sources that include an excess of the constituent relative to a mean quantity.
  • This embodiment of the invention also includes a back surface contact that is planar coated with a second precursor.
  • This embodiment includes the use of a switchable (e.g., on-off), modulatable (e.g., field strength), reversible (e.g., polarity), substantially regularly periodically varying electric field strength with respect to basal spatial location.
  • a switchable e.g., on-off
  • modulatable e.g., field strength
  • reversible e.g., polarity
  • a first precursor 510 includes (ln/Ga) y (Se)i -y and In/Ga sources 512.
  • the first precursor 510 is coupled to a planarized release layer 514 that is coupled to a substantially regularly periodically relieved surface of a tool 516.
  • the sources 512 can be self assembled at locations corresponding to the relieved surface by photo-ionizing In/Ga particles and applying a negative bias to the tool, or flood gun ionizing the In/Ga particles and applying a positive bias to the tool.
  • photoionization and/or floodgun ionization to enable positioning of quantum dots is described by U.S. Pat. No. 6,313,476.
  • a second precursor 520 includes Cu x Sei -x .
  • the first precursor 510 and the second precursor 520 are contacted and heated, and an electric field is applied.
  • the depicted electric field tends to drive some of the copper ions away from the projections of the relieved tool, thereby forming copper rich alpha domains.
  • Driving the copper away from the tool helps avoid welding the reaction product to the tool.
  • the sources 512 form indium-gallium rich beta domains. Referring to FIG. 5C, after the electric field is removed, the tool is separated and the domains remain intact.
  • this example relates to an embodiment of the invention that includes a tool 610 where the quantity of a first precursor 612 is substantially regularly periodically increased by planar coating a substantially regularly periodically relieved surface.
  • This embodiment of the invention also includes a back surface contact 614 where a second precursor 616 is substantially planarized.
  • this example relates to an embodiment of the invention that includes a tool 660 that is planar coated with a first precursor 662.
  • This embodiment of the invention also includes a back surface contact 664 where the quantity of a second precursor 668 is substantially regularly periodically increased by planar coating a substantially regularly periodically relieved surface.
  • locations of additional second precursor correspond to locations where second precursor rich domains will be located adjacent the second substrate.
  • locations of additional second precursor correspond to locations where second precursor rich domains will be located adjacent the second substrate.
  • only one of the resulting domains extends from a first surface 670 of the reaction product to a second surface 672.
  • an emitter 699 is coupled to the reaction product.
  • this example relates to an embodiment of the invention including planar coating of a first precursor on a surface of a tool where a first precursor constituent is substantially regularly periodically increased with regard to a basal plane by utilizing a relieved substrate.
  • the result is an excess of the constituent relative to a mean quantity at locations that correspond to the individual recesses of the relieved surface of the tool.
  • This embodiment also includes the use of a switchable (e.g., on-off), modulatable (e.g., field strength), reversible (e.g., polarity), substantially regularly spatially periodically varying electric field strength with respect to basal spatial location.
  • a first precursor 810 is provided on a tool surface 815.
  • a second precursor 820 is provided on a back contact 822.
  • the first precursor 810 and the second precursor 820 are contacted and heated, and an electric field is applied.
  • the electric field tends to drive at least some of the copper ions away from the tool. It is important to appreciate that the strength of the field is higher at those locations of the tool surface that are not relieved.
  • the electrostatic driving force is also substantially regularly periodically increased with regard to a basal plane.
  • the field as depicted exerts a force on the copper that is opposite the direction of chemical drive on the copper, and can be termed reverse bias (inapposite to forward bias).
  • reverse bias inapposite to forward bias
  • the direction of the field can selected, the magnitude of the field -can be controlled and the field can be switched on and/or off.
  • indium-gallium rich beta domains tend to form at locations that correspond to the individual recesses of the relieved surface of the tool. Referring to FIG. 8C, after the electric field is removed, the tool is separated and the domains remain intact.
  • this example relates to an embodiment of the invention including a first precursor on a surface of a tool where a first precursor constituent is substantially regularly periodically increased with regard to a basal plane by utilizing a relieved substrate in combination with a liquid coating containing the first precursor constituent.
  • the liquid coating is dried and then a remainder of the first precursor is deposited.
  • the result is an excess of the constituent relative to a mean quantity at locations that correspond to the individual recesses of the relieved surface of the tool.
  • This embodiment again includes the use of a switchable (e.g., on-off), modulatable (e.g., field strength), reversible (e.g., polarity), substantially regularly spatially periodically varying electric field strength with respect to basal spatial location.
  • the liquid coating 905 containing the first precursor constituent is applied to a tool surface 515.
  • the liquid coating 905 is dried and capillary forces cause the first precursor constituent to collect at the deepest portions of the individual recesses.
  • the remainder 910 of the first precursor is planar deposited.
  • a second precursor 920 is provided on a back contact 522.
  • the first precursor 910 and the second precursor 920 are contacted and heated, and an electric field is applied. With the bias of the field applied as depicted in FIG. 9D, the electric field tends to drive at least some of the copper ions away from the relieved substrate.
  • the strength of the field is higher at those locations of the tool surface that are not recessed.
  • the electrostatic driving force is also substantially regularly periodically increased with regard to a basal plane.
  • the direction of the field can selected, the magnitude of the field can be controlled and the field can be switched on and/or off.
  • indium-gallium rich beta domains tend to form at locations that correspond to the individual recesses of the relieved surface of the tool. After the electric field is removed, the tool is separated and the domains remain intact.
  • this example relates to an embodiment of the invention including a second precursor 1000 on a surface of a back contact 1020 where a second precursor constituent is substantially regularly periodically increased by previously depositing a plurality of constituent sources 1010 that include an excess of the constituent relative to a mean quantity.
  • this embodiment includes the use of a switchable (e.g., on-off), modulatable (e.g., field strength), reversible (e.g., polarity), electric field.
  • sources 1010 are formed on the back contact 1020 by epitaxy.
  • a first precursor 1030 is provided on the surface of a tool.
  • the first precursor 1030 and the second precursor 1000 are contacted and heated, and the electric field is applied.
  • the electric field tends to drive at least some of the copper ions away from the surface of the tool.
  • the field as depicted exerts a force on the copper that is opposite the direction of chemical drive on the copper, and can be termed reverse bias.
  • the direction of the field can selected, the magnitude of the field can be controlled and the field can be switched on and/or off.
  • the sources 1010 form copper rich alpha domains. Referring to FIG. 10D, after the electric field is removed, the tool is separated and the domains remain intact.
  • a practical application of the invention that has value within the technological arts is the manufacture of photovoltaic devices such as absorber films or electroluminescent phosphors. Further, the invention is useful in conjunction with the fabrication of semiconductors (such as are used for the purpose of transistors), or in conjunction with the fabrication of superconductors (such as are used for the purpose magnets or detectors), or the like. There are virtually innumerable uses for an embodiment of the invention, all of which need not be detailed here. Advantages
  • Embodiments of the invention can be cost effective and advantageous for at least the following reasons.
  • Embodiments of the invention can improve the control of formation of a segregated phase domain structure within a chemical reaction product.
  • Embodiments of the invention can improve the boundary properties of a plurality of domain structures within the segregated phase domain structure.
  • Embodiments of the invention can improve the performance of chemical reaction products that include a segregated phase domain structure.
  • Embodiments of the invention improve quality and/or reduce costs compared to previous approaches.
  • the term layer is generically intended to mean films, coatings and thicker structures.
  • the term coating is subgenerically intended to mean thin films, thick films and thicker structures.
  • the term composition is generically intended to mean inorganic and organic substances such as, but not limited to, chemical reaction products and/or physical reaction products.
  • the term selen ⁇ de is intended to mean a material that includes the element selenium and does not include enough oxygen to precipitate a separate selenate base; oxygen may be present in selenide.
  • the term tool is intended to mean a substrate intended for re-use or multiple use.
  • program and/or the phrase computer program are intended to mean a sequence of instructions designed for execution on a computer system (e.g., a program and/or computer program, may include a subroutine, a function, a procedure, an object method, an object implementation, an executable application, an applet, a servlet, a source code, an object code, a shared library/dynamic load library and/or other sequence of instructions designed for execution on a computer or computer system).
  • radio frequency is intended to mean frequencies less than or equal to approximately 300 GHz as well as the infrared spectrum. Group numbers corresponding to columns within the periodic table of the elements use the "New Notation" convention as seen in the CRC Handbook of Chemistry and Physics, 81 st Edition (2000).
  • the term substantially is intended to mean largely but not necessarily wholly that which is specified.
  • the term approximately is intended to mean at least close to a given value (e.g., within 10% of).
  • the term generally is intended to mean at least approaching a given state.
  • the term coupled is intended to mean connected, although not necessarily directly, and not necessarily mechanically.
  • the term proximate is intended to mean close, near adjacent and/or coincident; and includes spatial situations where specified functions and/or results (if any) can be carried out and/or achieved.
  • the term deploying is intended to mean designing, building, shipping, installing and/or operating.
  • the terms first or one, and the phrases at least a first or at least one, are intended to mean the singular or the plural unless it is clear from the intrinsic text of this document that it is meant otherwise.
  • the terms second or another, and the phrases at least a second or at least another are intended to mean the singular or the plural unless it is clear from the intrinsic text of this document that it is meant otherwise.
  • the terms a or an are employed for grammatical style and merely for convenience.
  • the term plurality is intended to mean two or more than two.
  • the term any is intended to mean all applicable members of a set or at least a subset of all applicable members of the set.
  • the phrase any integer derivable therein is intended to mean an integer between the corresponding numbers recited in the specification.
  • the phrase any range derivable therein is intended to mean any range within such corresponding numbers.
  • the term means, when followed by the term “for” is intended to mean hardware, firmware and/or software for achieving a result.
  • the term step, when followed by the term “for” is intended to mean a (sub)method, (sub)process and/or (sub)routine for achieving the recited result.
  • inventions of embodiments of the invention need not be formed in the disclosed shapes, or combined in the disclosed configurations, but could be provided in any and all shapes, and/or combined in any and all configurations.
  • the individual components need not be fabricated from the disclosed materials, but could be fabricated from any and all suitable materials. Homologous replacements may be substituted for the substances described herein.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Separation By Low-Temperature Treatments (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Integrated Circuits (AREA)
  • Catalysts (AREA)
  • Elevator Door Apparatuses (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

L'invention concerne une composition qui comprend un produit de réaction chimique définissant une première surface et une seconde surface, la composition étant caractérisée en ce qu'elle comprend une structure de domaines de phase séparés incluant une pluralité de structures de domaines, au moins une de la pluralité des structures de domaines comprenant au moins un domaine qui se déploie depuis une première surface du produit de réaction chimique vers une seconde surface dudit produit.
EP20070709803 2006-01-12 2007-01-12 Compositions comprenant des structures de domaines de phase separes de maniere reglee Ceased EP1977452A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/330,905 US7767904B2 (en) 2006-01-12 2006-01-12 Compositions including controlled segregated phase domain structures
US11/331,422 US20070160763A1 (en) 2006-01-12 2006-01-12 Methods of making controlled segregated phase domain structures
US11/331,431 US8084685B2 (en) 2006-01-12 2006-01-12 Apparatus for making controlled segregated phase domain structures
PCT/US2007/000935 WO2007082080A1 (fr) 2006-01-12 2007-01-12 Compositions comprenant des structures de domaines de phase separes de maniere reglee

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EP1977452A1 true EP1977452A1 (fr) 2008-10-08

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EP07716584A Not-in-force EP1974392B1 (fr) 2006-01-12 2007-01-12 Dispositif pour fabriquer des structures de domaines de phase separes de maniere reglee
EP20070709803 Ceased EP1977452A1 (fr) 2006-01-12 2007-01-12 Compositions comprenant des structures de domaines de phase separes de maniere reglee
EP07716583A Not-in-force EP1974397B1 (fr) 2006-01-12 2007-01-12 Procedes de fabrication de structures de domaines de phase separes de maniere reglee

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EP (3) EP1974392B1 (fr)
KR (3) KR101245556B1 (fr)
AT (2) ATE459983T1 (fr)
AU (3) AU2007204891B2 (fr)
BR (3) BRPI0707122A2 (fr)
CA (3) CA2636791C (fr)
DE (1) DE602007005092D1 (fr)
ES (2) ES2373147T3 (fr)
MX (3) MX2008008975A (fr)
WO (3) WO2007082084A2 (fr)

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CN101471394A (zh) * 2007-12-29 2009-07-01 中国科学院上海硅酸盐研究所 铜铟镓硫硒薄膜太阳电池光吸收层的制备方法
WO2011017237A2 (fr) 2009-08-04 2011-02-10 Precursor Energetics, Inc. Précurseurs polymères pour photovoltaïques caigs et aigs contenant de l'argent
US8585936B2 (en) 2009-08-04 2013-11-19 Precursor Energetics, Inc. Methods for photovoltaic absorbers with controlled group 11 stoichiometry
SG178228A1 (en) 2009-08-04 2012-03-29 Precursor Energetics Inc Polymeric precursors for caigas aluminum-containing photovoltaics
WO2011017236A2 (fr) 2009-08-04 2011-02-10 Precursor Energetics, Inc. Précurseurs polymères pour photovoltaïques cis et cigs
WO2011084171A1 (fr) 2009-12-17 2011-07-14 Precursor Energetics, Inc. Précurseurs moléculaires pour l'optoélectronique
US20110312160A1 (en) 2010-05-21 2011-12-22 Heliovolt Corp. Liquid precursor for deposition of copper selenide and method of preparing the same
WO2012023973A2 (fr) 2010-08-16 2012-02-23 Heliovolt Corporation Précurseur liquide pour le dépôt du séléniure d'indium et procédé de préparation correspondant
WO2012037391A2 (fr) 2010-09-15 2012-03-22 Precursor Energetics, Inc. Processus de recuit pour éléments photovoltaïques
TWI435463B (zh) 2011-07-26 2014-04-21 Au Optronics Corp 形成光電轉換層之方法
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se

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Publication number Publication date
KR101245555B1 (ko) 2013-03-19
WO2007082085A2 (fr) 2007-07-19
MX2008008976A (es) 2008-12-19
ES2373147T3 (es) 2012-01-31
ATE520154T1 (de) 2011-08-15
WO2007082080A1 (fr) 2007-07-19
KR20080112200A (ko) 2008-12-24
EP1974397A2 (fr) 2008-10-01
BRPI0707122A2 (pt) 2011-04-19
CA2636790A1 (fr) 2007-07-19
KR20080112198A (ko) 2008-12-24
AU2007204891B2 (en) 2010-12-09
WO2007082084A3 (fr) 2007-09-07
KR101266548B1 (ko) 2013-05-23
BRPI0707128A2 (pt) 2011-04-19
KR101245556B1 (ko) 2013-03-19
MX2008008977A (es) 2008-12-19
CA2636790C (fr) 2014-03-11
CA2636791C (fr) 2013-02-26
KR20080112199A (ko) 2008-12-24
EP1974397B1 (fr) 2010-03-03
MX2008008975A (es) 2009-01-07
AU2007204891A1 (en) 2007-07-19
CA2637111A1 (fr) 2007-07-19
CA2637111C (fr) 2013-02-26
WO2007082084A2 (fr) 2007-07-19
AU2007204811A1 (en) 2007-07-19
DE602007005092D1 (de) 2010-04-15
BRPI0707127A2 (pt) 2011-04-19
EP1974392B1 (fr) 2011-08-10
ES2342022T3 (es) 2010-06-30
WO2007082085A3 (fr) 2007-09-07
CA2636791A1 (fr) 2007-07-19
AU2007204811B2 (en) 2010-04-08
AU2007204812B2 (en) 2010-05-13
EP1974392A2 (fr) 2008-10-01
ATE459983T1 (de) 2010-03-15
AU2007204812A1 (en) 2007-07-19

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