EP1955422A2 - Source de photons uniques, procede de realisation et fonctionnement associes - Google Patents

Source de photons uniques, procede de realisation et fonctionnement associes

Info

Publication number
EP1955422A2
EP1955422A2 EP06818092A EP06818092A EP1955422A2 EP 1955422 A2 EP1955422 A2 EP 1955422A2 EP 06818092 A EP06818092 A EP 06818092A EP 06818092 A EP06818092 A EP 06818092A EP 1955422 A2 EP1955422 A2 EP 1955422A2
Authority
EP
European Patent Office
Prior art keywords
photon source
cavity
quantum dot
single photon
quantum dots
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06818092A
Other languages
German (de)
English (en)
Inventor
Anatol Lochmann
Robert Seguin
Dieter Bimberg
Sven Rodt
Vladimir Gaysler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Technische Universitaet Berlin
Original Assignee
Technische Universitaet Berlin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Technische Universitaet Berlin filed Critical Technische Universitaet Berlin
Publication of EP1955422A2 publication Critical patent/EP1955422A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash

Definitions

  • the invention relates to single photon sources and to methods for their production and operation.
  • the term single photon source is understood to mean photon sources which can emit individual photons, in particular with a defined or predefined polarization, entangled photons and cascades of correlated photons.
  • Single-photon sources include the core element of quantum cryptography. This is far superior to conventional encryption technologies. When exchanging sensitive data, such as at online stores, it offers a total privacy based on the laws of quantum mechanics.
  • the data is encrypted using a conventional method.
  • the key with which these can be decoded again is then separated and transmitted, for example, in time before the actual data.
  • unauthorized eavesdropping is noticed. Only if the key has been proven not to be intercepted, the encrypted data packet is transmitted in a conventional manner.
  • even larger amounts of data such as images or films, which are classified as worthy of protection, can be transmitted tap-proof in the usual speed, since the single-photon source is used only for the transmission of the key.
  • An ideal single photon gun is a device that emits a single photon ("on demand”) after a trigger signal, and only then.
  • the central element of a single-photon source is optimally a quantized system with discrete energy levels.
  • Quantum dots offer decisive advantages.
  • Counter ⁇ set to the isolated atom can be the discrete energy levels of a quantum dot non-resonant also stimulate.
  • Embedded in a suitable semiconductor structure can thus realize an electrically operated structure. This is particularly important in terms of marketing potential as system integration is greatly simplified. For an optically excited structure, on the contrary, additional components would be required which would complicate the manufacture and later maintenance of the system and increase the cost.
  • a third previously known concept is based on heavily attenuated lasers. To make two-photon pulses unlikely, the laser pulses are attenuated to an intensity less than 0.1 photons per cycle. This limits the maximum data transfer rate, as> 90% of the clocks are "empty.” In addition, the error rate is increased, as amplifiers can generate and measure photons, even if the clock was actually "empty". This limitation of gain limits the range of transmission. Furthermore, two-photon pulses can not be completely ruled out.
  • the present invention seeks to provide a method for producing a single photon source, which can be carried out easily and reproducibly.
  • a method for producing a single-photon source in which a predetermined operating behavior is determined by specific adjustment of the fine-structure splitting of the excitonic energy level of at least one quantum dot by producing the at least one quantum dot with a structure size (quantum dot size) corresponding to the fine-structure splitting to be set ,
  • the inventive method allows the reproducible production of quantum dots with desired electronic states and thus the reproducible production of single photon sources with predetermined properties.
  • the fine-structure splitting of the excitonic energy level of quantum dots depends on material stresses.
  • the invention is based on the invention, by the choice of the structure size of the quantum or quantum points, ie by the choice of the quantum dot size, the degree of strain within the quantum dots and the degree of strain within the surrounding material structure (eg semiconductor structure). This also defines the fine structure splitting and possibly the energetic position of the excitonic energy level from which the photons are emitted.
  • compact single photon sources can be produced which can emit defined linearly polarized single photons, entangled photon pairs or cascades of correlated photons.
  • the material of the quantum dots and the material of the photon-carrying regions of the photon source are chosen so that the wavelength of the photons corresponds to the dispersion or absorption minimum of already laid telecom fibers (1.3 ⁇ m or 1.55) ,
  • This can be achieved, for example, with In (Ga) As based quantum dots in Ga (In, Al) As or In (Ga) P in Ga (In) P.
  • the described method is preferably carried out using established semiconductor technology methods.
  • the at least one quantum dot is preferably formed with 800 to 5000 atoms of the quantum dot material.
  • Such a small number of atoms or such a small quantum dot size leads to such a strain within the quantum dot and within the surrounding material structure that the fine structure splitting of the excitonic energy level becomes very small or - ideally this would be - zero; in the case of a very small or not existing fine structure splitting have the "bright" by the two; states of the exciton energy level emit photons ⁇ oriented identical frequencies and are entangled with each other.
  • a fine-structure splitting between-100 ⁇ eV and + 100 ⁇ eV is set by the choice of the quantum dot size.
  • the ground state energy of the at least one quantum dot is preferably between 1.27 eV and 1.33 eV.
  • the at least one quantum dot is preferably at 40,000 to
  • +300 ⁇ eV is set by the structure size of the at least one quantum dot accordingly - as mentioned - large.
  • the ground state energy of the at least one quantum dot is preferably less than 1.1 eV for a single photon source that generates individual photons of defined polarization.
  • a method for producing a single photon source in which a cavity having one or more longitudinal resonance frequencies is produced, wherein several quantum dots are arranged within the cavity, which generate photons, each with its own emission frequency, during operation of the single photon source in which a charge carrier injection device is manufactured and arranged such that it can inject charge carriers into the region of the cavity during operation of the single photon source, and the quantum dots can excite the generation of the photons, and the density of the quantum dots is so low and the scattering is so large in size and material composition of the quantum dots, that during operation of the single photon source exclusively the emission frequency of a single quantum dot of one of the longitudinal resonance frequencies of Kavitä t and can be coupled out of the cavity.
  • single-photon sources can be produced in a very simple manner, which can be operated electrically and which additionally follow the concept of the resonant coupling of the excitonic states of the quantum dots with the modes of the cavity due to the presence of a cavity.
  • the cavity provides a preferred direction for the emission of the photons, and in addition the spontaneous emission rate is increased by the utilization of the Purcell effect many times.
  • the cavity is dimensioned such that the longitudinal natural frequency of the cavity used for coupling out the photons is the emission frequency of that quantum. corresponds to the lowest emission frequency of all excited quantum dots. This prevents that a generated photon reabsor ⁇ can again be biert undesirable.
  • the areal density of the quantum dots is preferably chosen to be less than 5 * 10 9 per square centimeter A particularly preferred range is between 1 * 10 8 and 5 * 10 9 cm -2 .
  • the scattering in terms of size and material composition of the quantum dots is preferably selected to be so large that the emission frequencies of the quantum dots at the operating temperature of the photon source are mutually overlap-free.
  • a current path limiting device which bundles the current flow and thus the flow of the injected charge carriers in the region of the cavity in such a way that only a subgroup of the quantum dots produced is excited within the cavity.
  • a current path limiting device which could also be referred to as a "quantum dot selection device" makes it possible to actually actively operate only a single one even with a very large number of "excitable" quantum dots.
  • a temperature adjusting device is produced with which the temperature of the single photon source for its operation can be lowered to a temperature value at which the emission spectra of the quantum dots located within the cavity are free of overlap.
  • a temperature reduction namely, the spectral width of the emission spectra of the quantum dots is reduced, so that very closely adjacent emission spectra that overlap at room temperature can be separated.
  • a method for making a single-photon source in which a cavity having one or more longitudinal resonant frequencies is fabricated, with at least one quantum dot layer disposed within the cavity, wherein a stimulator is fabricated and arranged to be exposed during the time period Operation of the single-photon source excites at least one quantum dot to generate the photons, and in which at the longitudinal to the emission direction of the photons extending side walls of the cavity, a highly reflective layer is applied.
  • the diameter of the cavity should be as small as possible to achieve maximum Purcell factors.
  • a highly reflective layer is proposed here, which rests on the side walls of the cavity.
  • the side wall roughness of this metal layer is of particular importance, since the associated light scattering significantly limits the realizable Purcell factors.
  • the highly reflective layer may be formed, for example, by a metal layer, e.g. B. gold layer can be realized.
  • the field distribution is further optimized via A10 x apertures within the cavity in order to reduce the optical losses in the sidewall region of the cavity.
  • a single photon source for emitting single linearly polarized photons or entangled photon pairs, in particular for use in quantum cryptography, viewed with one or more
  • Quantum dots that generate photons each having an emission frequency during operation of the single photon source, with a cavity within which the quantum dots are arranged, wherein the cavity has one or more longitudinal resonance frequencies, and with a carrier injection device, which during operation of the single photon source in The charge carriers are injected into the region of the cavity and the quantum dots are excited to generate the photons.
  • a carrier injection device which during operation of the single photon source in The charge carriers are injected into the region of the cavity and the quantum dots are excited to generate the photons.
  • only photons of a single quantum dot are extracted, namely the photons of the quantum dot whose emission frequency corresponds to one of the longitudinal resonance frequencies of the cavity.
  • the cavity is dimensioned such that the longitudinal natural frequency of the cavity of the emission frequency used for coupling out the photons of the Quan ⁇ ten Vietnamese pieces corresponds to having all of the excited quantum dots the lowest emission frequency.
  • the single-photon source preferably has a current path limiting device which concentrates the flow of the injected charge carriers in the region of the cavity and reduces the number of actually excited quantum dots.
  • the single-photon source has a plurality of quantum dots, which are arranged in a predetermined density and have a predetermined dispersion of their properties.
  • the excited subgroup of quantum dots is so small and the predetermined scattering of the properties of the quantum dots that at the operating temperature of the single photon source, the emission spectra of the quantum dots of the subgroup - at least some of them, but preferably all - are overlap-free.
  • the density of quantum dots is less than 5 * 10 9 per square centimeter.
  • a particularly preferred range is between 1 ⁇ 10 8 and 5 ⁇ 10 9 cm -2 .
  • a temperature adjusting device which lowers the temperature of the single-photon source for its operation to a predetermined operating temperature at which the emission spectra - at least some of them, but preferably all - are within the cavity Quantum dots are non-overlapping.
  • a single photon ⁇ is source to emit single linearly polarized photons or photon pairs - in particular for use in quantum cryptography - viewed, with at least one quantum dot, which generates during operation of the single-photon source photons having an emission frequency, with a cavity within of which the at least one quantum dot is arranged and which has a filter characteristic such that only a resonant coupling takes place between a single one of the quantum dots and the cavity, and with an excitation device which, during operation of the single photon source, generates the at least one quantum dot for generating the photons excites, wherein at the longitudinal to the emission direction of the photons extending side walls of the cavity, a highly reflective layer, in particular a metal layer is applied.
  • the diameter of the cavity can be reduced and the Purcell factor can be increased by the highly reflective layer without significantly increasing the optical losses of the cavity.
  • Temperature of the single photon source is adjusted such that the emission frequency of that quantum dot, which has the smallest emission frequency of all the excited quantum dots, coincides with a longitudinal natural frequency of a cavity of the single photon source.
  • a method for driving a single-photon source in which the emission spectrum of an exciting device used for the optical excitation is set so that the emission spectrum is energetically above the states of the "active" Furthermore, lies in a region in which the cavity of the single photon source is transparent.
  • FIG. 1 schematically shows the generation of photons by a quantum dot on the basis of a schematic energy diagram for an exciton X and a bend XX;
  • FIG. 2 shows the measured fine structure splitting of the bright exciton in the ground state as a function of the exciton energy and the quantum dot size
  • FIGS. 3A, 3B show the emission of defined polarized photons with high emission rate and the emission of polarization entangled photon pairs
  • FIG. 4 shows a first exemplary embodiment of a single photon source according to the invention
  • FIG. 5 shows the current flow within the single-photon source according to FIG. 4;
  • FIG. 6 shows the reflection spectrum of a lower Bragg mirror package and an upper Bragg mirror package of the single-photon source according to FIG. 4;
  • FIG. 7 shows the reflection spectrum of a cavity of the single-photon source according to FIG. 4 in detail
  • 8 shows luminescence properties of two quantum dots of the single-photon source in accordance with Fi gur ⁇ 4 at different temperatures
  • FIG. 9 shows luminescence properties of an ensemble of quantum dots in the single-photon source according to FIG. 4 at different temperatures
  • FIGS. 10a) -c) the decoupling of the photons of the quantum dot with the lowest emission frequency by means of a targeted temperature control
  • FIG. 11 shows a further exemplary embodiment of a single photon source according to the invention.
  • FIG. 12 shows the luminescence spectrum of a quantum dot and the electroluminescence of an excitation LED of the single-photon source according to FIG. 11 at low temperatures.
  • FIG. 1 shows a schematic energy diagram for an exciton X and a bending XX in a quantum dot.
  • the two mutually perpendicular polarization directions ( ⁇ +, ⁇ -) of the emitted photons are shown.
  • FIG. 2 shows the measured fine-structure splitting of the bright exciton in the ground state using the example of InAs / GaAs as a function of the exciton energy and the quantum dot size.
  • the fine-structure splitting is more energetic Distance of the two exciton emission lines shown. It can be seen that the size of overgrown, epitaxial quantum dots is directly correlated with their strain and that in turn the strain determines the fine structure splitting;
  • FIG. 2 shows by way of example a small InAs quantum dot consisting of 2400 atoms of the quantum dot material with the reference numeral 10 and a large InAs quantum dot consisting of 40,000 atoms of the quantum dot material with the reference numeral 15. Due to these relationships, it is possible to adjust the size of fine-structure splitting by producing quantum dots 10 and 15 of the corresponding size, respectively.
  • the quantum dots shown only schematically in FIG. 2 preferably have the shape of a pyramid with a square base cut off at the top.
  • Single photon emitters based on quantum dots offer the significant advantage over existing solutions - such as.
  • the low-power laser described earlier in this example can produce on-demand ⁇ photons , which means that each pulse generates exactly one photon at 100% quantum efficiency, and a single-photon source to be used for quantum cryptography has to be used.
  • On demand "either photons of a defined polarization state or pairs of polarization entangled photons can emit.
  • the fine structure splitting must be as large as possible in order to be able to select a single excitonic state with energetic filters (eg a matched cavity).
  • the fine-structure splitting For the generation of polarization-entangled photon pairs, the fine-structure splitting must at least approximately disappear. In this case, photons from the Biexziton ⁇ Excess ⁇ 0 decay cascade are used (see also FIG. 1). On the other hand, too great an energetic distance between the two existing excitonic states prevents the entanglement of the emitted photon pair.
  • the decisive factor for producing corresponding single-photon sources based on quantum dots is thus the fine-structure splitting. It determines the energy splitting of the excitonic ground state in two competent ⁇ de polarized perpendicular to each other. Fine-structure splitting was first observed at epitaxial quantum dots in the 1990s.
  • the method presented here allows the control of the fine structure splitting directly by adjusting the quantum dot size during the production of the quantum dots.
  • the fine structure splitting depends on the spatial symmetry of the electronic potential of a quantum dot. Tensions in the quantum dot structures lead to piezoelectric fields that influence the potential symmetry and thus the fine-structure splitting. The following applies: the greater the strain, the greater the fine structure splitting. Since the strain is dependent on the size of the quantum dots, the size of the fine structure splitting can be selected directly by choosing a specific quantum dot size.
  • FIGS. 3A and 3B show a schematic representation of two examples for this purpose.
  • One of the entangled photons of the Biexiton ⁇ exciton ⁇ 0 decay cascade can be sent to a respective receiver 1 or 2 by a respective E-mitter (see FIG. 3B).
  • measuring the polarization of one photon directly determines the measurement result of the polarization of the other photon.
  • FIG. 4 shows a first exemplary embodiment of a single-photon source 100 according to the invention in detail.
  • a substrate 105 of, for example, GaAs material, on which a lower Bragg mirror package 110 (preferably of oxide material) with mirror layer pairs 115 of different refractive index is applied.
  • a lower Bragg mirror package 110 preferably of oxide material
  • mirror layer pairs 115 of different refractive index
  • a lower Bragg mirror package 110 preferably of oxide material
  • electrical contact layer 120 of a charge carrier injection device formed by a pin diode structure 130.
  • an active layer 150 with a multiplicity of quantum dots 160 (eg of In (Ga) As) in a monolayer and an n-doped intermediate layer 165.
  • the quantum dots 160 have a predetermined density and thus a predetermined mean distance to each other.
  • an upper Bragg mirror stack 170 Above the upper electrical contact layer 140 of the pin diode structure 130 is an upper Bragg mirror stack 170, through which photons 180 can emerge upwards out of the single-photon source 100.
  • the upper mirror package 170 is preferably made of oxide material.
  • Reference numerals 190 and 195 denote electrical connection ⁇ contacts of the single-photon source 100; Particularly preferably, contacts 190 and 195 are intracavity contacts. Intracavity contacts are those which are arranged between the two mirror packages 110 and 170.
  • a strain matching layer for regulating the material stress in the region of the quantum dots with respect to the desired fine structure splitting as well as with regard to the adjustment of the emission wavelength.
  • a non-conductive layer 200 with an opening 210 can be seen; the nonconductive layer 200 forms a current aperture 220 through which the current I of the pin diode structure 130 flows.
  • the current flow I is shown in more detail in FIG.
  • the upper part of the single-photon source 100 according to FIG. 4 can be seen in FIG. 5, bottom right.
  • the flow of current is visualized in a three-dimensional view.
  • the current aperture 220 forms a current path limiting device of the single photon source 100, which limits the current in such a way that only a subgroup 160 'of the quantum dots 160 is excited; the remaining quantum dots 160 "are not excited because no sufficient current flows in their region.
  • the current path I of the current I is also limited in the embodiment according to FIG. 5 by a suitable doping profile in the n-doped intermediate layer 165 and the p-doped contact layer 140.
  • the doping increases in each case to the contacts in both layers and accordingly falls in the direction of the active layer 150 and in
  • FIG. 6 shows the reflection spectrum of the lower Bragg mirror package 110 and the upper Bragg mirror package 170.
  • Each mirror package is basically designed for a lenin Wel ⁇ ⁇ . It consists of pairs of layers of a material with a high refractive index and a material with a low refractive index, the optical thickness of which is ⁇ / 4.
  • the higher the refractive index contrast (compare curve 250 for a high refractive index contrast and curve 255 for a small refractive index contrast), the wider the stopband ⁇ , the smaller the penetration depth of the wave into the mirrors and the fewer mirror pairs needed for high reflectivity ,
  • a microcavity 260 is formed by the lower Bragg mirror package 110 and the upper Bragg mirror package 170 (see Fig. 4).
  • the term microcavity is to be understood as meaning cavities having a size in the micrometer range.
  • FIG. 7 shows the reflection spectrum of the cavity 260 in detail.
  • the higher the quality of the cavity the smaller the spectral width ⁇ c of so-called cavity dips 265 of the cavity 260.
  • Cavity dips are the longitudinal modes of the cavity.
  • the quality of the cavity is defined by the spectral width ⁇ c of the cavity dips 265.
  • the higher the quality the narrower the cavity dip.
  • the free spectral range ⁇ f between the cavity dips is dependent on the length L of the cavity. The larger this is, the closer the cavity dips 265 are together.
  • the modes of the cavity form a stationary spatial field distribution.
  • quantum dots have discrete energy states and therefore a discrete luminescence spectrum. The states and thus the luminescence shafts of a quantum dot depend sensitively on three parameters: material composition, size and shape of the quantum dots as well as the temperature. Since the temperature is the only variable parameter after completion of the device, it is of particular importance. Therefore, it should be discussed at this point even closer to him. If the temperature is increased, there is a line broadening and red shift of the luminescence. This is shown in FIG. 8.
  • FIG. 8 shows the luminescence of two individual quantum dots: Curves 270 and 270 'indicate the luminescence
  • the distance between the maxima remains constant.
  • FIG. 9 shows a luminescence spectrum of an ensemble in terms of size and material composition of similar quantum dots, once at room temperature (curve 280) and at low temperatures (curve 285).
  • the intensity distribution of the emission spectrum reflects the distribution function of the quantum points again. It is easy to see that the number of excited quantum dots decreases the more the size and composition of quantum dots move away from their mean.
  • a resonant excitation of individual quantum dots can only be achieved if the emission peaks of the quantum dots do not overlap. This can be achieved by a sufficient energetic distance between the quantum dots, or by lowering the operating temperature, thereby separating the emission lines.
  • the single-photon source 100 shown in FIG. 4 can theoretically be divided into two basic elements:
  • the first basic element is formed by the p-i-n diode structure 130, within which the monolayer quantum dots 160 is located.
  • the second primitive is formed by a single quantum dot resonantly coupled to the microcavity 260.
  • the selection effect of the cavity dip 265 is used.
  • the single photon source 100 is operated in a temperature range in which the luminescence spectrum consists of individual, non-overlapping emission lines.
  • the number of excited quantum dots 160 '- based on the total number of quantum dots 160 - has already been considerably limited by the current path limiting device.
  • By changing the temperature it can now be achieved, given a sufficiently small cavity-dip width ⁇ c, that only a single quantum dot is resonantly coupled to the cavity 260.
  • the situation illustrated in FIG. 10 a) corresponds in principle to the conditions in a VCSEL structure (Vertical Cavity Surface Emitting Laser).
  • FIG. 4 is thus capable of resonantly coupling a single, electrically excited quantum dot 160 'to the microcavity 260.
  • the active layer consists of only one monolayer of quantum dots.
  • the aim of the growth of this monolayer is to achieve the lowest possible density and a high fluctuation in terms of size and material composition of the quantum dots 160. This is ensured by proper guidance of crystal growth.
  • the VCSEL structure is also designed so that the "cavity dip" at operating temperature is at the maximum of the luminescence distribution.
  • Reabsorption by non excited quantum dots has a negative effect on 'the two devices.
  • the approach to avoid this is to stimulate as electrically as possible all the quantum dots in the cavity.
  • the current flow through the aperture is made as homogeneous as possible, so that quantum dots that are not in the middle of the aperture are also pumped.
  • the latter is undesirable in the case of the single-photon source 100 according to FIG. 4, since as few as possible, ide- ally only a single quantum dot should be electrically excited.
  • Einzelpho ⁇ is ion source 100 is preferably designed to be the ca- vity dip 265 is at operating temperature on the low energy side of the luminescence. If the cavity resonates with a quantum dot whose recombination energy is smaller than that of all other quantum dots, the photons emitted by it can no longer be reabsorbed within the structure, because their energy is too small for absorption by the remaining quantum dots.
  • the cavity length L is chosen as small as possible, ideally the cavity length is ⁇ / 2, which is possible by choosing a small mean refractive index (smaller than the refractive index of the adjacent upper and lower mirror layer).
  • the described single-photon source 100 fulfills all of the requirements listed above for a component that can be used for quantum cryptography.
  • the possibility of directly processing electrical signals should be mentioned.
  • System integration is thereby considerably simplified.
  • the resonant coupling of the quantum dot states with the modes of a microcavity ensures by using the Purcell bines a sufficient spontaneous emission rate. Together with the cavity also provided by the cavity nen emission preferred direction, the efficiency is thus to Be ⁇ dürfnissen a realistic component adjusted.
  • the optical losses that occur when coupling into glass fibers, are minimal. The reason for this lies in the identical to the VCSEL radiation characteristic, which is characterized by small opening angle and round beam profiles.
  • the device is to use microns in principle able to inte for telecommunications ⁇ relichen wavelengths of 1.3 microns and 1.55.
  • the structural similarity to the VCSEL provides Asked before ⁇ single photon source 100 beyond the pre ⁇ in part, is that their production methods with established Me ⁇ and can be realized process.
  • the quantum dots 160 in the case of In (Ga) As are preferably formed with 800 to 5000 atoms of the quantum dot material. With such a size of the quantum dots, the fine structure splitting is generally sufficiently small to be able to generate entangled photon pairs; Preferably, the fine-structure splitting is within an interval between -100 ⁇ eV and + 100 ⁇ eV, more preferably between -50 ⁇ eV and + 50 ⁇ eV.
  • the ground state energy of the quantum dots is, for example, between 1.27 eV and 1.33 eV.
  • the quantum dots 160 are preferably formed with 40,000 to 125,000 atoms of the quantum dot material.
  • the fine-structure splitting is generally sufficiently large to be able to "filter away" the unwanted photons generated, preferably a fine-structure splitting of at least +400 ⁇ eV, more preferably of at least +500 ⁇ eV or more is set
  • the ground state energy of the quantum dots is less than 1.1 eV.
  • FIG. 11 shows a further exemplary embodiment of a single-photon source 100.
  • DBR Distributed Bragg Reflector
  • the cavity 515 utilizes the Purcell effect, which describes the influence of the resonant coupling of the energetic states of the quantum dot 520 with the modes of the cavity 515 on the spontaneous emission rate.
  • the parameter that quantifies this effect is the Purcell factor F. This depends on the quality and the fashion volume of the
  • Cavity and describes the ratio of the lifetimes of a quantum mechanical state outside and within a cavity according to:
  • the quality factor Q is dependent on the inner and outer optical losses of the cavity 515. Internal losses occur due to light absorption, external losses due to partial decoupling by the resonator mirrors due to their finite reflectivity and various scattering mechanisms. As the column diameter d of the cavity 515 decreases, the outer optical losses of the cavity increase. This is due to a decrease in mirror reflectivities due to increasingly curved wavefronts, a decreasing horizontal waveguide, and the increasing light scattering caused by roughnesses on the column jacket 540 of the cavity. Since the quality of the cavity is directly incorporated in the Purcell factor, it can easily be seen that an increase in the Purcell factor is limited only by the reduction in the cavity diameter d. The requirement for small column diameters d, however, entails the problem that the optical losses increase greatly with decreasing diameter, so that there is a dramatic deterioration of the quality factor Q of the cavity.
  • the column jacket 540 of the single-photon source 100 shown in FIG. 11 is provided with a highly reflective coating 550.
  • the highly reflective coating 550 may be formed by a gold layer, for example.
  • the field distribution can be moreover, within the cavity 515 even further in the Hin ⁇ view of minimal losses and minimal mode volume optimized by the optical field distribution as far as possible from the column edge 540 of the cavity is kept away.
  • the effective refractive index within the cavity is reduced by the AlO x layers and is smaller than the refractive index of the top and bottom adjacent mirror layers, consisting for example of GaAs. This first enables a minimum cavity length of ⁇ / 2.
  • the emission spectrum of the LED 510 used for the optical excitation is preferably chosen such that the excitation is energetically above the states of the quantum dot 520; the cavity 515 is preferably transparent in this wavelength range.
  • the curve 600 of FIG. 12 shows the luminescence spectrum of the quantum dot 520 at low temperatures; Curve 610 shows the electroluminescence of the excitation LED. Reference numerals 265, 265 'and 265' 'indicate the longitudinal modes of the cavity 515.
  • the single-photon source 100 shown in FIG. 11 likewise fulfills all of the requirements set out at the outset for a component which can be used for quantum cryptography.
  • the single photon source 100 is capable of directly processing electrical signals.
  • the spontaneous emission rate is sufficiently high and can be further increased because of the effective suppression of optical losses due to the mirroring of the cavity shell 540.
  • the cavity 515 also has a positive effect the radiation characteristic. This results in a round beam profile, so that any optical losses are reduced when coupled into fibers.
  • the filter characteristic of the cavity ensures that only photons within a very narrow frequency band, ie photons of a single quantum dot, are coupled out of the cavity ,
  • quantum dots with emission wavelengths of 1.3 ⁇ m or 1.55 ⁇ m can be realized.
  • the quantum dot 520 is preferably formed with 800 to 5000 atoms of the quantum dot material.
  • a fine-structure splitting between -100 ⁇ eV and + 100 ⁇ eV or better between only -50 ⁇ eV and + 50 ⁇ eV - ideally would be exactly zero - is preferably set.
  • the ground state energy of the quantum dot 520 is, for example, between 1.27 eV and 1.33 eV.
  • the height h of the quantum dot in this case is preferably between 0.3 nm and 0.9 nm.
  • the quantum dot 520 is preferably formed with 40,000 to 125,000 atoms of the quantum dot material.
  • the fine-structure splitting usually becomes sufficiently large to be able to "filter away" the unwanted co-produced photons, preferably a fine-structure splitting of at least +400 ⁇ eV, more preferably of at least +500 ⁇ eV or more is set
  • Ground state energy of the quantum dot 520 is, for example less than 1.1 eV.
  • the height h of the quantum dot is greater than 2 nm, preferably in the case ⁇ sem.

Abstract

L'invention concerne, entre autres, un procédé pour réaliser une source de photons uniques (100) ayant un comportement de fonctionnement défini. Selon l'invention, le comportement de fonctionnement défini de la source de photons uniques (100) est déterminé par réglage ciblé de la séparation de la structure fine (FSS) du niveau d'énergie excitonique d'au moins un point quantique (160', 520), le point quantique ayant une grandeur correspondant à la séparation de la structure fine à régler.
EP06818092A 2005-11-30 2006-11-20 Source de photons uniques, procede de realisation et fonctionnement associes Withdrawn EP1955422A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005057800A DE102005057800B4 (de) 2005-11-30 2005-11-30 Einzelphotonenquelle und Verfahren zu deren Herstellung und Betrieb
PCT/DE2006/002065 WO2007062625A2 (fr) 2005-11-30 2006-11-20 Source de photons uniques, procede de realisation et fonctionnement associes

Publications (1)

Publication Number Publication Date
EP1955422A2 true EP1955422A2 (fr) 2008-08-13

Family

ID=38047645

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06818092A Withdrawn EP1955422A2 (fr) 2005-11-30 2006-11-20 Source de photons uniques, procede de realisation et fonctionnement associes

Country Status (5)

Country Link
US (1) US8404506B2 (fr)
EP (1) EP1955422A2 (fr)
JP (1) JP5221373B2 (fr)
DE (1) DE102005057800B4 (fr)
WO (1) WO2007062625A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2488199A (en) * 2012-01-23 2012-08-22 Toshiba Res Europ Ltd A tuneable quantum light source which mimimizes fine structure splitting (FSS)
US9219191B2 (en) 2009-11-06 2015-12-22 Kabushiki Kaisha Toshiba Tuneable quantum light source

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080039412A (ko) * 2006-06-26 2008-05-07 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치
JP5332886B2 (ja) * 2008-07-14 2013-11-06 日本電気株式会社 光子発生装置
DE102008036400B3 (de) * 2008-08-01 2010-01-21 Technische Universität Berlin Photonenpaarquelle und Verfahren zu deren Herstellung
JP5829375B2 (ja) * 2009-06-05 2015-12-09 日本電気株式会社 光学素子とこれを用いた光子発生装置、光発生装置、光記録装置および光検出装置
FR2955401B1 (fr) * 2010-01-19 2012-08-03 Centre Nat Rech Scient Source de paires de photons intriques en polarisation et son procede de fabrication
CN101840980A (zh) * 2010-04-08 2010-09-22 长春理工大学 一种1.55μmInN量子点单光子源
GB2480265B (en) * 2010-05-10 2013-10-02 Toshiba Res Europ Ltd A semiconductor device and a method of fabricating a semiconductor device
US8149888B1 (en) 2010-09-27 2012-04-03 Technische Universitat Berlin Single photon source
DE102011078176A1 (de) 2011-06-28 2013-01-03 Technische Universität Berlin Elektrooptisches bauelement
DE102011107360A1 (de) * 2011-06-29 2013-01-03 Karlsruher Institut für Technologie Mikrooptisches Element, mikrooptisches Array und optisches Sensorensystem
CN102280595A (zh) * 2011-06-29 2011-12-14 浙江大学 一种胶质量子点光学微腔结构及其制造方法
SE537434C2 (sv) 2012-06-26 2015-04-28 Polar Light Technologies Ab Grupp III-nitridstruktur
US9748356B2 (en) 2012-09-25 2017-08-29 Stmicroelectronics, Inc. Threshold adjustment for quantum dot array devices with metal source and drain
US9601630B2 (en) 2012-09-25 2017-03-21 Stmicroelectronics, Inc. Transistors incorporating metal quantum dots into doped source and drain regions
DE102012025088A1 (de) * 2012-12-20 2014-06-26 Forschungszentrum Jülich GmbH Massenfertigungstaugliche Einzelphotonenquelle und Herstellungsverfahren
US10002938B2 (en) 2013-08-20 2018-06-19 Stmicroelectronics, Inc. Atomic layer deposition of selected molecular clusters
GB2531568B (en) * 2014-10-22 2018-07-04 Toshiba Res Europe Limited An optical device and method of fabricating an optical device
US10431956B2 (en) 2015-07-14 2019-10-01 International Business Machines Corporation Nanocavity monolayer laser monolithically integrated with LED pump
CN105070803B (zh) * 2015-09-01 2017-08-29 中国科学技术大学 一种基于量子点的可级联纠缠光源及远程量子通讯系统
WO2017145026A1 (fr) * 2016-02-23 2017-08-31 Silanna UV Technologies Pte Ltd Dispositif électroluminescent à cavité optique résonante
US10418517B2 (en) 2016-02-23 2019-09-17 Silanna UV Technologies Pte Ltd Resonant optical cavity light emitting device
GB2549703B (en) * 2016-04-19 2019-11-06 Toshiba Kk An optical device and method for its fabrication
DE102017114369A1 (de) 2017-06-28 2019-01-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
WO2019014870A1 (fr) * 2017-07-19 2019-01-24 华为技术有限公司 Dispositif de calcul quantique et procédé de réalisation d'une porte logique quantique photonique
US10622514B1 (en) 2018-10-15 2020-04-14 Silanna UV Technologies Pte Ltd Resonant optical cavity light emitting device
EP3926769B1 (fr) * 2020-06-18 2023-01-18 TRUMPF Photonic Components GmbH Procédé de production d'un laser à cavité verticale et à émission par la surface
US11829050B2 (en) * 2021-11-22 2023-11-28 Electronics And Telecommunications Research Institute Entangled-photon pair emitting device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5991326A (en) * 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6507042B1 (en) * 1998-12-25 2003-01-14 Fujitsu Limited Semiconductor device and method of manufacturing the same
US6424669B1 (en) * 1999-10-29 2002-07-23 E20 Communications, Inc. Integrated optically pumped vertical cavity surface emitting laser
GB2377551B (en) 1999-11-23 2003-11-12 Toshiba Res Europ Ltd A photon source
US6728281B1 (en) * 2000-02-10 2004-04-27 The Board Of Trustees Of The Leland Stanford Junior University Quantum-dot photon turnstile device
FR2809542B1 (fr) * 2000-05-29 2005-02-25 France Telecom Source a un photon a base d'emetteurs dont les frequences sont reparties de maniere choisie
US6782021B2 (en) * 2001-03-02 2004-08-24 Xiaodong Huang Quantum dot vertical cavity surface emitting laser
GB2378575B (en) 2001-05-15 2003-09-03 Toshiba Res Europ Ltd A photon source and a method of operating a photon source
GB2380605B (en) * 2001-10-02 2004-01-14 Toshiba Res Europ Ltd A photon source and method of its fabrication and operation
WO2004015454A2 (fr) 2002-07-30 2004-02-19 The Board Of Trustees Of The Leland Stanford Junior University Microcavite micropilier a demi-longueur d'onde presentant un champ electrique maximum dans le materiau a indice de refraction eleve
GB2403344B (en) * 2003-06-24 2005-08-24 Toshiba Res Europ Ltd A photon source and method of fabricating a photon source
JP2005136267A (ja) * 2003-10-31 2005-05-26 Fujitsu Ltd 半導体量子ドット素子
JP3649408B1 (ja) * 2004-04-20 2005-05-18 独立行政法人科学技術振興機構 量子もつれ光子対の生成方法

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
BAYER M ET AL: "Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots", PHYSICAL REVIEW B (CONDENSED MATTER AND MATERIALS PHYSICS) APS THROUGH AIP USA, vol. 65, no. 19, 15 May 2002 (2002-05-15), pages 195315/1 - 23, ISSN: 0163-1829 *
CHARLES M. SANTORI: "GENERATION OF NONCLASSICAL LIGHT USING SEMICONDUCTOR QUANTUM DOTS", PHD THESIS, 30 April 2003 (2003-04-30), Stanford, CA, USA, Retrieved from the Internet <URL:http://www.stanford.edu/group/yamamotogroup/Thesis/CMSthesis.pdf> [retrieved on 20140107] *
FIORE A ET AL: "Nanoscale single quantum dot devices at 1300 nm", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG. USA, vol. 5734, no. 1, 1 April 2005 (2005-04-01), Bellingham, pages 106 - 115, ISSN: 0277-786X, DOI: 10.1117/12.598039 *
LANGBEIN W ET AL: "Control of fine-structure splitting and biexciton binding in InxGa1-xAs quantum dots by annealing", PHYSICAL REVIEW B (CONDENSED MATTER AND MATERIALS PHYSICS) APS THROUGH AIP USA, vol. 69, no. 16, 15 April 2004 (2004-04-15), pages 161301 - 1, ISSN: 0163-1829 *
LIN-WANG WANG, PAUL PREUSS, Retrieved from the Internet <URL:http://www.lbl.gov/Science-Articles/Archive/Quantum-Dot-Electronics.html> *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9219191B2 (en) 2009-11-06 2015-12-22 Kabushiki Kaisha Toshiba Tuneable quantum light source
GB2488199A (en) * 2012-01-23 2012-08-22 Toshiba Res Europ Ltd A tuneable quantum light source which mimimizes fine structure splitting (FSS)
GB2488199B (en) * 2012-01-23 2013-02-06 Toshiba Res Europ Ltd Tuneable quantum light source

Also Published As

Publication number Publication date
JP2009517870A (ja) 2009-04-30
DE102005057800B4 (de) 2009-02-26
WO2007062625A2 (fr) 2007-06-07
WO2007062625A3 (fr) 2007-08-02
US8404506B2 (en) 2013-03-26
JP5221373B2 (ja) 2013-06-26
US20100074293A1 (en) 2010-03-25
DE102005057800A1 (de) 2007-06-06

Similar Documents

Publication Publication Date Title
DE102005057800B4 (de) Einzelphotonenquelle und Verfahren zu deren Herstellung und Betrieb
DE102013204964B4 (de) Optisch gepumpte oberflächenemittierende Laser mit Reflektor mit hohem Reflexionsvermögen und begrenzter Bandbreite
DE69921189T2 (de) Verbindungshalbleiterstruktur für optoelektronische bauelemente
DE60120651T2 (de) Optisch gepumpter passiv modengekoppelter oberflächenemittierender halbleiterlaser mit externem resonator
DE3323811C2 (de) Kantenemittierender Halbleiterlaser
DE10147353C2 (de) Halbleiterlaser mit mindestens zwei optisch aktiven Bereichen
DE10214120B4 (de) Optisch pumpbare oberflächenemittierende Halbleiterlaservorrichtung
DE102016014938B4 (de) Lichtemittervorrichtung, basierend auf einem photonischen Kristall mit säulen- oder wandförmigen Halbleiterelementen, und Verfahren zu deren Betrieb und Herstellung
DE102009056387B4 (de) Kantenemittierender Halbleiterlaser Halbleiterlaser mit einem Phasenstrukturbereich zur Selektion lateraler Lasermoden
DE60204168T2 (de) Phasenverschobene oberflächenemittierende dfb laserstrukturen mit verstärkenden oder absorbierenden gittern
DE102011075502A1 (de) Breitstreifen-Diodenlaser mit hoher Effizienz und geringer Fernfelddivergenz
DE102008040374A1 (de) Lasereinrichtung
DE102020108941B4 (de) Diodenlaser mit verrringerter Strahldivergenz
WO2021228660A1 (fr) Composant à lasers à semi-conducteur et procédé pour faire fonctionner au moins un laser à semi-conducteur
EP1454392B1 (fr) Procede et dispositif de production de rayonnement laser sur la base de semi-conducteurs
DE102022125325A1 (de) Photonische integrierte schaltung mit verstärkungsmedium und optoelektronische vorrichtung
DE3626701A1 (de) Halbleiter-laseranordnung
EP0175351A2 (fr) Dispositif de lasers à semi-conducteur couplés
DE102018113874B4 (de) Optoelektronisches Halbleiterbauteil
DE602004011656T2 (de) Lichtemittierendes halbleiterbauelement und verfahren zu seiner herstellung
DE102004052030A1 (de) Optischer Halbleiterverstärker, Verfahren zu dessen Herstellung und optische Kommunikationsvorrichtung
DE10105731A1 (de) Laserstruktur und Verfahren zur Einstellung einer definierten Wellenlänge
DE102006042196A1 (de) Oberflächenemittierender Halbleiterkörper mit vertikaler Emissionsrichtung und stabilisierter Emissionswellenlänge
EP2866315A2 (fr) Diode laser semi-conductrice ayant une longueur d&#39;onde d&#39;émission réglable
DE102008017268A1 (de) Oberflächenemittierender Halbleiterlaser mit monolithisch integriertem Pumplaser

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20080617

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

DAX Request for extension of the european patent (deleted)
17Q First examination report despatched

Effective date: 20140116

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20140729