EP1941554A2 - Nanofils emettant de la lumiere destines a la macroelectronique - Google Patents

Nanofils emettant de la lumiere destines a la macroelectronique

Info

Publication number
EP1941554A2
EP1941554A2 EP06760165A EP06760165A EP1941554A2 EP 1941554 A2 EP1941554 A2 EP 1941554A2 EP 06760165 A EP06760165 A EP 06760165A EP 06760165 A EP06760165 A EP 06760165A EP 1941554 A2 EP1941554 A2 EP 1941554A2
Authority
EP
European Patent Office
Prior art keywords
nanowires
nanowire
substrate
light emitting
shell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06760165A
Other languages
German (de)
English (en)
Inventor
Chunming Niu
Stephen A. Empedocles
David J. Zaziski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanosys Inc
Original Assignee
Nanosys Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanosys Inc filed Critical Nanosys Inc
Publication of EP1941554A2 publication Critical patent/EP1941554A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • FIG. IA is a diagram of a single crystal semiconductor nanowire.
  • nanowires can be fabricated from all of the industrially important semiconductor materials, such as silicon, GaN, GaAs, InP and InAs, as well as those discussed above.
  • the nanowires can have diameters that can be precisely defined anywhere between 2 and 100 run with lengths up to 100 ⁇ m. They are each a near-perfect single crystal. They also can be easily processed in solution for integration into device architectures.
  • nanowires of these materials Because of the extremely small diameter of nanowires and the nature of their growth method, single crystal nanowires of these materials with virtually no defects can be readily prepared. Thus, these nanowires can be a much more efficient light emission source. Since the nanowires have a high surface-area, surface states and traps can present a potentially greater issue for nanowires than that for bulk materials. This can be resolved by the growth a core shell nanowire structure, whereby the shell material passivates surface defects. For example, single crystal quality transistors using a core shell structure of silicon nanowires have been developed.

Abstract

La présente invention concerne des systèmes et des procédés de fabrication de dispositifs luminescents macroélectroniques au moyen de nanofils orientés de manière dense. Dans une forme de réalisation, des nanofils d'âme sont synthétisés et une enveloppe isolante est fabriquée autour des nanofils. Les structures âme-enveloppe des nanofils sont ensuite déposées sur un substrat pour créer un film mince de nanofil à orientation dense. Une fois créé ce film mince de nanofil à orientation dense, une structure de nanofil métal-isolant est fabriquée par dépôt d'un métal sur le film mince de nanofil. Des contacts ohmiques sont ensuite créés sur la structure de nanofil métal-isolant en vue de son fonctionnement. L'application de signaux électriques sur les contacts ohmiques provoque l'émission de lumière par la structure de nanofil métal-isolant. Des dispositifs luminescents comportant des films minces de nanofil à orientation dense sont également présentés. Dans une forme de réalisation, le dispositif luminescent est par exemple, une DEL. Les nanofils peuvent comprendre par exemple des nanofils du type GaN, InP et CdS ou une combinaison de ces types et d'autres nanofils. Différentes couleurs de lumière peuvent être produites en fonction du type de nanofil, de la combinaison des types de nanofil et des caractéristiques physiques de ces nanofils.
EP06760165A 2005-06-02 2006-05-18 Nanofils emettant de la lumiere destines a la macroelectronique Withdrawn EP1941554A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US68641705P 2005-06-02 2005-06-02
PCT/US2006/019402 WO2006130359A2 (fr) 2005-06-02 2006-05-18 Nanofils emettant de la lumiere destines a la macroelectronique

Publications (1)

Publication Number Publication Date
EP1941554A2 true EP1941554A2 (fr) 2008-07-09

Family

ID=37482137

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06760165A Withdrawn EP1941554A2 (fr) 2005-06-02 2006-05-18 Nanofils emettant de la lumiere destines a la macroelectronique

Country Status (5)

Country Link
US (1) US20060273328A1 (fr)
EP (1) EP1941554A2 (fr)
AU (1) AU2006252815A1 (fr)
CA (1) CA2609042A1 (fr)
WO (1) WO2006130359A2 (fr)

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KR20150098246A (ko) 2010-09-01 2015-08-27 샤프 가부시키가이샤 발광 소자 및 그 제조 방법, 발광 장치의 제조 방법, 조명 장치, 백라이트, 표시 장치 및 다이오드
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Also Published As

Publication number Publication date
CA2609042A1 (fr) 2006-12-07
WO2006130359A3 (fr) 2009-04-23
AU2006252815A1 (en) 2006-12-07
US20060273328A1 (en) 2006-12-07
WO2006130359A2 (fr) 2006-12-07

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