EP1917509A1 - Sensor arrangement comprising a substrate and a housing and method for producing a sensor arrangement - Google Patents
Sensor arrangement comprising a substrate and a housing and method for producing a sensor arrangementInfo
- Publication number
- EP1917509A1 EP1917509A1 EP06777639A EP06777639A EP1917509A1 EP 1917509 A1 EP1917509 A1 EP 1917509A1 EP 06777639 A EP06777639 A EP 06777639A EP 06777639 A EP06777639 A EP 06777639A EP 1917509 A1 EP1917509 A1 EP 1917509A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- housing
- region
- sensor arrangement
- substrate region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/141—Monolithic housings, e.g. molded or one-piece housings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
- B81B7/0048—Packages or encapsulation for reducing stress inside of the package structure between the MEMS die and the substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/148—Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Definitions
- German patent application DE 199 29 026 A1 discloses a method for producing a pressure sensor in which a semiconductor pressure sensor is applied to a mounting section of a cable grid, the semiconductor pressure sensor is electrically connected to contact sections of the cable grid, the line grid is inserted into an injection molding tool with the semiconductor pressure sensor and then the Halbleitdruckaufillon is surrounded in the injection mold with a housing of injection molding compound, wherein in the injection mold means are provided by which a pressure feed for the Halbleitdruckaufillon of the casing and spray compound is recessed, wherein a punch in the injection mold through a gap to that of spaced apart from the semiconductor pressure transducer side of the mounting portion is arranged.
- sensors that need access to external media, such.
- pressure sensors should be packaged in preform housings.
- the housing mold is injected and subsequently the chip is mounted in the already prefabricated housing and contacted accordingly.
- premold housing shapes are relatively expensive compared to standard mold housings
- attempts have already been made by means of the aforementioned disclosure to package pressure sensors in standard gold housings as well.
- a partial area of the component surface is kept free for this purpose by a stamp or the like.
- a disadvantage of all existing housing forms is that the sensor element is at least partially embedded in a plastic compound. Due to thermal expansion, the characteristic of the sensor element can be greatly influenced. This is possible, for example, in that different thermal expansion coefficients lead to stresses in the sensor element, which gives rise to incorrect measurements or functional failures.
- the substrate has a first substrate region and a second substrate region, wherein an active sensor region, for example a pressure sensor membrane or the like, is located in the second substrate region and the second substrate region is projecting out of the housing.
- an active sensor region for example a pressure sensor membrane or the like
- the housing has an opening in the second substrate region.
- the first and second substrate region are preferably a continuous substrate material, the division between the first substrate region and the second substrate region being achieved only in that parts of the substrate are embedded in the housing (first substrate region) and parts thereof Protrude housing (second substrate area).
- the substrate can also be a composite substrate material, for example a semiconductor substrate with a cap wafer or else composite or bonded or grown substrates such as SOI substrates or the like.
- an injection molding compound is provided as the housing is. This can be based on proven manufacturing processes for the provision of packages for semiconductor devices or in general for electronic components are used, in particular to the method of the so-called transfer molding (transfer molding method), which is also referred to as transfer forms.
- transfer molding method transfer molding method
- a housing made of a molding compound (molding compound) is produced by embedding the component or a semiconductor sensor arrangement in the housing.
- the housing at least partially surrounds the second substrate region at least in a main plane of the substrate.
- the second substrate region projecting out of the housing is protected by mechanical stresses that could be caused by the housing, but at the same time also by the housing itself, which, however, is spaced apart from the second substrate region Substrate is arranged, is protected, especially against external forces, such as by falling or otherwise.
- the second substrate region has an active region for sensing a detectable variable or several detectable variables, the size or the sizes being detectable only by means of at least indirect contact of at least part of the sensor arrangement with a medium.
- the active sensor region is accessible, on the one hand, for a medium, for example a fluid which is under pressure and whose pressure is to be measured, and, on the other hand, nevertheless a cost-effective, simple and rapid production of the entire sensor arrangement , That is, including a housing for the substrate with the active region according to the invention is possible.
- a medium for example a fluid which is under pressure and whose pressure is to be measured
- the sensor arrangement according to the invention for sensor principles in which no media contact is present or required, for example inertial sensors. Even with such, no media contact requiring sensor principles, it is particularly advantageous that a stress introduction from the housing to the active sensor area is largely avoided.
- the first substrate region has contact means for electrical contacting and / or circuit means, and that only comparatively insensitive structures are provided in the substrate at the transition between the first substrate region and the second substrate region are.
- Such comparatively insensitive structures are, for example, conduction paths which lead or provide contacting lines from the circuit part in the first substrate region to the active region in the second substrate region. According to the invention it is thereby possible that without loss of yield or the like.
- a functionally correct transition from the first substrate region to the second substrate region is possible, ie in particular one successful sealing between an injection mold and the substrate of the sensor arrangement during encapsulation of the first substrate region with the potting compound is possible.
- a sealing material in particular a gel or a film, is provided at the transition between the first substrate region and the second substrate region.
- Another object of the present invention is a method for producing a sensor arrangement according to the invention, wherein in particular the housing is produced by encapsulation of the substrate and wherein the substrate is substantially completely surrounded by the housing only in its first substrate region. The remaining substrate region (second substrate region) projects out of the housing opposite.
- a part of the injection molding tool either has direct contact with the substrate or that during encapsulation for sealing an injection molding tool between the first substrate region and the second substrate region, a part of the injection molding tool presses on a sealing material.
- the sealing material can be incorporated either in the manufacture of the housing in the sensor assembly, for example by applying the Sealing material on the substrate (between the first and the second substrate portion) and then casting of the housing material, ie, then at least partially embedding also the sealing material in the housing (consumption of the sealing material in the manufacture of the housing).
- the sealing material may also be provided as part of an injection molding tool or at least attached thereto for sealing (for example as a sealing film or as a soft sealing compound). In this case, the sealing material is at least not substantially embedded in the housing.
- FIG. 2 shows a schematic illustration of a sectional view through a sensor arrangement according to the invention, based on the section line AA from FIG. 1
- FIG. 3 shows a schematic plan view of a sensor arrangement according to the invention with further details on the interior of the sensor arrangement
- FIG. 4 shows a schematic plan view of a second embodiment of a sensor arrangement according to the invention
- Figure 5 is a schematic sectional view of the second embodiment of the sensor arrangement according to the invention based on the section line AA of Figure 4 and
- Figure 6 is a schematic sectional view of a third embodiment of a sensor arrangement according to the invention.
- FIG. 1 shows a schematic plan view of a sensor arrangement 10 according to the invention.
- This sensor arrangement 10 comprises a housing 30 and a substrate 20.
- the substrate material is provided in particular as a semiconductor material or as a composite substrate, for example, of wafers of different or identical materials.
- the substrate material is referred to as substrate 20.
- the substrate 20 has a first region 21 and a second region 22 on, wherein in the second region 22, an active region 23 is shown separately, which serves for sensing or for detecting a size to be measured by means of the sensor arrangement 10 according to the invention.
- an opening 33 is provided in the housing 30 in the transition region to the first substrate region 21, so that the second substrate region 22 can protrude.
- the variable which can be detected by means of the active region 23 is, in particular, one which can be detected only by means of at least indirect contact between the second substrate region 22 or in particular the active region 23 and a medium not shown in the figures.
- the medium may be, for example, a gas whose pressure is to be measured by means of a pressure measuring membrane as the active region 23.
- the medium, some air or another gas, must have access to the region 23, ie in particular to the pressure measuring membrane.
- This access to the active region 23 is realized according to the invention in that the second substrate region 22 protrudes from the housing 30 and that the first substrate region 21 is embedded in the housing 30.
- FIG. 1 shows a section line AA, with FIG.
- FIG. 1 it can still be seen that, in particular, connecting elements 31, such as, for example, pins or contacting legs or the like, protrude from the housing 30.
- connecting elements 31, such as, for example, pins or contacting legs or the like protrude from the housing 30.
- no contacting elements 31 protrude from the housing 30, but that on the top, the bottom and / or the lateral surfaces of the housing 30 contact surfaces (not shown) are present, the contact of the device or the Sensor arrangement serve, for example by means of a flip-chip mounting option or the like.
- FIG. 3 shows a further schematic plan view of the sensor arrangement according to the invention, with further details of the interior of the sensor arrangement 10 being visible in FIG. 3, for example next to the substrate 20, the first substrate region 21, the second substrate region 22, the active region 23 further substrate 26 and the bonding wires 27, further bonding wires 32 for contacting the further substrate 26 with the connecting elements 31.
- the leadframe 25 is shown in FIG.
- FIG. 4 shows a second embodiment of the sensor arrangement 10 according to the invention in a schematic plan view.
- the substrate 20 has the first substrate region 21 and the second substrate region 22, wherein the second substrate region 22 on the one hand comprises the active region 23 and on the other hand protrudes from the housing 30 at the opening 33.
- the housing 30 has an extension region 35, which extends essentially in the main plane of the substrate 20 around the second substrate region 22 and thus protects the second substrate region 22, in particular against mechanical influences.
- the advantages of the present sensor arrangement according to the invention are realized insofar as the additional region 35 or extension region 35 of the housing protects the second substrate region 22, but no mechanical forces, for example due to different temperature coefficients or the like on the second substrate region 22 and in particular on the active region 23 of the sensor arrangement exerts.
- the extension region 35 maintains a distance from the second substrate region 22, this distance being indicated by the reference numeral 24 in FIG.
- FIG. 4 also has a section line AA, with FIG. 5 essentially showing a sectional illustration (with certain deviations) along section line AA from FIG.
- FIG. 5 shows the above-mentioned, schematic sectional representation along the section line AA (with deviations) from FIG. 4, wherein the sensor arrangement 10 according to the invention again comprises the substrate 20, the first substrate region 21, the second substrate region 22, the active region 23, the other Substrate 26, the extension portion 35 and the wiring grid 25 and the leadframe 25 includes.
- FIG. 6 schematically illustrates a third embodiment of the sensor arrangement according to the invention, the substrate 20 again comprising the first substrate region 21, the second substrate region 22 and the active region 23, but in the transition region between the first substrate region 21 and the second substrate region 22, ie in the region of the opening 33, a sealing material 29 is provided, which is used in the manufacture of the housing 30 of the sensor assembly 10 insofar as an injection molding tool or injection molding tool, not shown, of a device for encapsulation of the first substrate portion 21 with the housing material no direct contact or does not have to exert direct compressive forces on the substrate 20 in the transition region between the first substrate region 21 and the second substrate region 22, but presses on the sealing material 29 and thus the structures present in this substrate region in front of these applied pressure force protects.
- a sealing material 29 is provided, which is used in the manufacture of the housing 30 of the sensor assembly 10 insofar as an injection molding tool or injection molding tool, not shown, of a device for encapsulation of the first substrate portion 21 with the housing material no direct contact or does
- the material of the housing 30 can thus be filled in the area to be extrusion-coated (first substrate area 21) with the required pressure and the required temperature, which furthermore does not lead to an impairment of the speed of the production process of the sensor arrangement 10 according to the invention. Namely, it is one of the main problems in coating only a portion 21 of the substrate 20, that the sealing of the tool against the molding compound or against the potting compound of the housing 30 has potential problems. Due to tolerances must be over-pressed during sealing, otherwise excess plastic material (Flash) flows into the active region 23 of the sensor or the substrate 20 and causes disturbing deposits of the potting compound there.
- Flash excess plastic material
- the sealing material 29 according to the invention either - as shown in Figure 6 - are embedded in the housing 30 (ie remain on the finished sensor assembly 10) or in an alternative embodiment, not shown, in particular the method according to the invention, only be provided on the injection mold, so that In the latter case, the sealing material 29 does not (or at least not substantially) penetrate into the housing 30 embedded.
- the side of the silicon is thereby more difficult to seal, since possibly an angular rotation contributes to the formation of a gap.
- the active area of the sensor is arranged on the upper side of the beam or the substrate 20 projecting in the second substrate area 22 and thus does not cause a slight lateral flash formation (ie on the lateral narrow sides of the substrate 20) for the function of the sensor is critical.
- the third embodiment of the sensor arrangement 10 according to the invention can of course be combined with the first and / or the second embodiment.
- the senor it is possible for the sensor to be separated from the evaluation electronics, ie a so-called two-chip module is provided within the sensor arrangement 10, as shown in FIGS. 2, 3 and 5, or for the sensor or the substrate 20 already includes the evaluation and therefore a further substrate 26 is not required, so that the sensor assembly 10 can be implemented as a single-chip module.
- the first embodiment of the sensor arrangement 10 according to the invention is particularly advantageous if the smallest possible dimension of the sensor arrangement is desired or if the sensor element, for example for biosensors or the like, is to dip into a liquid or generally into a fluid which the Moldcom pound or the potting compound of the housing 30 should not touch.
- the housing shape of the sensor arrangement 10 according to the second embodiment in which the extension area 35 of the housing 30 is guided all around the second substrate area 22 and protects the active area 23, offers maximum protection against mechanical influences on the sensor element 23 or the active region 23 of the sensor assembly 10.
- the second substrate region 22 only contacts the housing 30 on one of its sides (or the extension region 35 at all).
- the housing 30 may be a housing form with pins or with connection legs or even a modern "leadless" form.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention relates to a sensor arrangement comprising a substrate and a housing, in addition to a method for producing a sensor arrangement. The housing, essentially, completely surrounds the substrate in a first substrate area. The housing is at least partially opened, by means of an opening, in a second substrate area and the second substrate area protrudes from the housing in the region of the second substrate area.
Description
Sensoranordnung mit einem Substrat und mit einem Gehäuse und Verfahren zur Herstellung einer Sensoranordnung Sensor arrangement with a substrate and with a housing and method for producing a sensor arrangement
Stand der TechnikState of the art
Die Erfindung geht aus von einer Sensoranordnung mit einem Substrat und mit einem Gehäuse nach der Gattung des Hauptanspruchs. Aus der deutschen Offenleg ungsschrift DE 199 29 026 A1 ist ein Verfahren zur Herstellung eines Drucksensors bekannt, bei dem ein Halbleiterdruckaufnehmer auf einen Montageabschnitt eines Leitungsgitters aufgebracht wird, der Halbleiterdruckaufnehmer mit Kontaktabschnitten des Leitungsgitters elektrisch verbunden wird, das Leitungsgitter mit dem Halbleiterdruckaufnehmer in ein Spritzwerkzeug eingesetzt wird und anschließend der Halbleiterdruckaufnehmer in dem Spritzwerkzeug mit einem Gehäuse aus Spritzmasse umgeben wird, wobei in dem Spritzwerkzeug Mittel vorhanden sind, durch welche eine Druckzuführung für den Halbleiterdruckaufnehmer von der Umhüllung und Spritzmasse ausgespart wird, wobei ein Stempel im Spritzwerkzeug durch einen Spalt zu der von dem Halbleiterdruckaufnehmer abgewandten Seite des Montageabschnittes beabstandet angeordnet ist. Alternativ dazu ist es bekannt, Sensoren, die einen Zugang zu äußeren Medien brauchen, wie z. B. Drucksensoren, in Pre- mold-Gehäusen zu verpacken. Dazu wird zuerst die Gehäuseform gespritzt und nachfolgend der Chip in das bereits vorgefertigte Gehäuse montiert und entsprechend kontaktiert. Da sogenannte Premold-Gehäuse-Formen gegenüber Standard- Moldgehäusen vergleichsweise teuer sind, ist bereits mittels der genannten Offenle- gungsschrift versucht wurden, auch Drucksensoren in Standardmold-Gehäusen zu verpacken. Beispielsweise wird hierfür durch einen Stempel oder dgl. ein Teilbereich der Bauelementoberfläche freigehalten. Nachteilig bei allen bereits existierenden Gehäuseformen ist, dass das Sensorelement in eine Kunststoffmasse zumindest teilweise eingebettet ist. Durch thermische Ausdehnung kann die Kennlinie des Sensorelements stark beeinflusst werden. Dies ist beispielsweise dadurch möglich, dass unterschiedliche thermische Ausdehnungskoeffizienten zu Spannungen in dem Sensorelement führen, was zu Fehlmessungen bzw. Funktionsausfällen Anlass gibt.
Vorteile der ErfindungThe invention is based on a sensor arrangement with a substrate and with a housing according to the preamble of the main claim. German patent application DE 199 29 026 A1 discloses a method for producing a pressure sensor in which a semiconductor pressure sensor is applied to a mounting section of a cable grid, the semiconductor pressure sensor is electrically connected to contact sections of the cable grid, the line grid is inserted into an injection molding tool with the semiconductor pressure sensor and then the Halbleitdruckaufnehmer is surrounded in the injection mold with a housing of injection molding compound, wherein in the injection mold means are provided by which a pressure feed for the Halbleitdruckaufnehmer of the casing and spray compound is recessed, wherein a punch in the injection mold through a gap to that of spaced apart from the semiconductor pressure transducer side of the mounting portion is arranged. Alternatively, it is known sensors that need access to external media, such. For example, pressure sensors should be packaged in preform housings. For this purpose, first the housing mold is injected and subsequently the chip is mounted in the already prefabricated housing and contacted accordingly. Since so-called premold housing shapes are relatively expensive compared to standard mold housings, attempts have already been made by means of the aforementioned disclosure to package pressure sensors in standard gold housings as well. For example, a partial area of the component surface is kept free for this purpose by a stamp or the like. A disadvantage of all existing housing forms is that the sensor element is at least partially embedded in a plastic compound. Due to thermal expansion, the characteristic of the sensor element can be greatly influenced. This is possible, for example, in that different thermal expansion coefficients lead to stresses in the sensor element, which gives rise to incorrect measurements or functional failures. Advantages of the invention
Die erfindungsgemäße Sensoranordnung mit einem Substrat und mit einem Gehäuse bzw. das erfindungsgemäße Verfahren zur Herstellung einer Sensoranordnung mit den Merkmalen der nebengeordneten Ansprüche hat dem gegenüber den Vorteil, dass der aktive Sensorbereich der Sensoranordnung erheblich besser von Spannungseintragungen, welche durch das Gehäuse induziert sind, entkoppelt werden kann. Hierzu weist das Substrat einen ersten Substratbereich und einen zweiten Substratbereich auf, wobei sich ein aktiver Sensorbereich, etwa eine Drucksensormembran oder dgl., im zweiten Substratbereich befindet und der zweite Substratbereich aus dem Gehäuse ragend vorgesehen ist. Im Übergangsbereich zwischen dem ersten und dem zweiten Substratbereich weist das Gehäuse im zweiten Subtratbereich eine Öffnung auf. Dadurch, dass der zweite Substratbereich aus dem Gehäuse ragend vorgesehen ist, ist das Gehäuse so ausgeführt, dass der Sensor bzw. das Substrat mit dem aktiven Sensorbereich nur an einer Seite, nämlich im Bereich seines ersten Substratbereichs, im Moldcompound bzw. im Gehäusematerial eingebettet ist. Dies kann erfindungsgemäß beispielsweise dadurch erreicht werden, dass der Sensor balkenförmig ausgeführt ist. Vorteilhafterweise ist daher das Substrat mit dem im zweiten Substratbereich befindlichem Sensorelement bzw. aktiven Bereich lediglich im ersten Substratbereich in das Gehäuse eingebettet vorgesehen. Bevorzugt ist ferner, dass der erste Substratbereich und der zweite Substratbereich monolithisch verbunden vorgesehen sind bzw. von diesem umgeben. Dies bedeutet, dass es sich bei dem ersten und zweiten Substratbereich vorzugsweise um ein durchgängiges Substratmaterial handelt, wobei die Einteilung zwischen ersten Substratbereich und zweiten Substratbereich lediglich dadurch zustande kommt, dass Teile des Substrats im Gehäuse eingebettet sind (erster Substratbereich) und Teile davon aus dem Gehäuse herausragen (zweiter Substratbereich). Selbstverständlich kann es sich bei dem Substrat auch um ein zusammengesetztes Substratmaterial handeln, beispielsweise um ein Halbleitersubstrat mit einem Kappenwafer oder auch um zusammengesetzte bzw. gebondete oder auch aufgewachsene Substrate wie etwa SOI-Substrate oder dgl. Bevorzugt ist ferner, dass als Gehäuse eine Spritzgussmasse vorgesehen ist. Hierfür kann auf bewährte Herstellungsverfahren zur Bereitstellung von Gehäusen für Halbleiterbauelemente bzw. generell für
elektronische Bauelemente zurückgegriffen werden, insbesondere auf das Verfahren des sogenannten Transfermolding (Spritzpressverfahren), welches auch als Transferformen bezeichnet wird. Hierbei wird ein Gehäuse aus einer Spritzmasse (Moldcompound) dadurch hergestellt, dass das Bauelement bzw. eine Halbleitersensoranordnung in das Gehäuse eingebettet wird.The sensor arrangement according to the invention with a substrate and with a housing or the method according to the invention for producing a sensor arrangement having the features of the independent claims has the advantage over the prior art that the active sensor area of the sensor arrangement is decoupled much better from voltage entries induced by the housing can be. For this purpose, the substrate has a first substrate region and a second substrate region, wherein an active sensor region, for example a pressure sensor membrane or the like, is located in the second substrate region and the second substrate region is projecting out of the housing. In the transition region between the first and the second substrate region, the housing has an opening in the second substrate region. Because the second substrate region is projecting out of the housing, the housing is designed such that the sensor or the substrate with the active sensor region is embedded on only one side, namely in the region of its first substrate region, in the molding compound or in the housing material , This can be achieved according to the invention, for example, in that the sensor is designed bar-shaped. Advantageously, the substrate with the sensor element or active region located in the second substrate region is therefore provided embedded in the housing only in the first substrate region. It is furthermore preferred that the first substrate region and the second substrate region are provided monolithically connected or surrounded by it. This means that the first and second substrate region are preferably a continuous substrate material, the division between the first substrate region and the second substrate region being achieved only in that parts of the substrate are embedded in the housing (first substrate region) and parts thereof Protrude housing (second substrate area). Of course, the substrate can also be a composite substrate material, for example a semiconductor substrate with a cap wafer or else composite or bonded or grown substrates such as SOI substrates or the like. It is further preferred that an injection molding compound is provided as the housing is. This can be based on proven manufacturing processes for the provision of packages for semiconductor devices or in general for electronic components are used, in particular to the method of the so-called transfer molding (transfer molding method), which is also referred to as transfer forms. In this case, a housing made of a molding compound (molding compound) is produced by embedding the component or a semiconductor sensor arrangement in the housing.
Bevorzugt ist ferner, dass das Gehäuse den zweiten Substratbereich zumindest in einer Hauptebene des Substrats beabstandet zumindest teilweise umgibt. Hierdurch ist es erfindungsgemäß vorteilhaft möglich, dass der aus dem Gehäuse herausragende, zweite Substratbereich zwar von mechanischen Spannungen, die durch das Gehäuse verursacht werden könnten, geschützt wird, jedoch gleichzeitig auch durch das Gehäuse selbst, welches jedoch im Bereich des zweiten Substratbereichs beabstandet von dem Substrat angeordnet ist, geschützt wird, insbesondere vor von außen einwirkenden Kräften, etwa durch Herunterfallen oder sonstiges. Erfindungsgemäß ist weiterhin bevorzugt, dass der zweite Substratbereich einen aktiven Bereich zur Sensierung einer detektierbaren Größe oder mehrerer detektierbarer Größen aufweist, wobei die Größe oder die Größen lediglich mittels eines wenigstens mittelbaren Kontakts zumindest eines Teils der Sensoranordnung mit einem Medium detektierbar sind. Es ist damit erfindungsgemäß vorteilhaft möglich, dass der aktive Sensorbereich zum einen für ein Medium, beispielsweise ein Fluid, welches unter Druck steht und dessen Druck gemessen werden soll, zugänglich ist und zum anderen, dass dennoch eine kostengünstige, einfache und schnelle Herstellung der gesamten Sensoranordnung, d. h. inklusive eines Gehäuses für das Substrat mit dem aktiven Bereich erfindungsgemäß möglich ist. Alternativ hierzu, d.h. dass ein Medienkontakt zwischen einem aktiven Sensorbereich und einem Medium besteht, ist es selbstverständlich auch möglich, die erfindungsgemäße Sensoranordnung für Sensorprinzipien zu verwenden, bei denen kein Medienkontakt vorhanden oder erforderlich ist, beispielsweise Inertialsensoren. Auch bei solchen, keinen Medienkontakt erfordernden Sensorprinzipien ist es besonders vorteilhaft, dass eine Stresseinleitung ausgehend vom Gehäuse zum aktiven Sensorbereich weitgehend vermieden wird. Erfindungsgemäß ist ferner bevorzugt, dass der erste Substratbereich Kontaktmittel zur elektrischen Kontaktierung und/oder Schaltungsmittel aufweist und dass am Übergang zwischen dem ersten Substratbereich und dem zweiten Substratbereich lediglich vergleichsweise unempfindliche Strukturen im Substrat vorgesehen
sind. Solche vergleichsweise unempfindlichen Strukturen sind beispielsweise Leitungsbahnen, die Kontaktierungsleitungen von dem Schaltungsteil im ersten Substratbereich zu den aktiven Bereich im zweiten Substratbereich führen bzw. bereitstellen. Erfindungsgemäß ist es dadurch möglich, dass ohne Ausbeuteverlust oder dgl. bzw. ohne zusätzliche Kosten allein aufgrund einer sinnvollen Anordnung der verschiedene Funktionsbereiche auf dem erfindungsgemäßen Substrat der Halbleiteranordnung bzw. der Sensoranordnung ein funktionsgerechter Übergang vom ersten Substratbereich zum zweiten Substratbereich möglich ist, d. h. insbesondere eine erfolgreiche Abdichtung zwischen einen Spritzwerkzeug und dem Substrat der Sensoranordnung beim Umspritzen des ersten Substratbereichs mit der Vergussmasse möglich ist. Es ist ferner bevorzugt, dass am Übergang zwischen dem ersten Substratbereich und dem zweiten Substratbereich ein Abdichtmaterial, insbesondere ein Gel oder eine Folie, vorgesehen ist. Hierdurch ist es vorteilhaft möglich, zum einen eine höhere Dichtigkeit zwischen dem Spritzwerkzeug und dem Substrat zu erzielen und andererseits einen besseren Schutz für die im Übergangsbereich zwischen dem ersten Substratbereich und dem zweiten Substratbereich befindlichen Strukturen des Substrates herbeizuführen. Dies führt darüber hinaus dazu, dass auch empfindlichere Strukturen in diesem Übergangsbereich lokalisierbar sind, so dass insgesamt die benötigte Chipfläche zur Herstellung des Substrats der Sensoranordnung reduziert werden kann.It is further preferred that the housing at least partially surrounds the second substrate region at least in a main plane of the substrate. In this way, it is advantageously possible according to the invention for the second substrate region projecting out of the housing to be protected by mechanical stresses that could be caused by the housing, but at the same time also by the housing itself, which, however, is spaced apart from the second substrate region Substrate is arranged, is protected, especially against external forces, such as by falling or otherwise. According to the invention, it is further preferred that the second substrate region has an active region for sensing a detectable variable or several detectable variables, the size or the sizes being detectable only by means of at least indirect contact of at least part of the sensor arrangement with a medium. It is thus advantageously possible according to the invention that the active sensor region is accessible, on the one hand, for a medium, for example a fluid which is under pressure and whose pressure is to be measured, and, on the other hand, nevertheless a cost-effective, simple and rapid production of the entire sensor arrangement , That is, including a housing for the substrate with the active region according to the invention is possible. Alternatively, ie that a media contact exists between an active sensor area and a medium, it is of course also possible to use the sensor arrangement according to the invention for sensor principles in which no media contact is present or required, for example inertial sensors. Even with such, no media contact requiring sensor principles, it is particularly advantageous that a stress introduction from the housing to the active sensor area is largely avoided. According to the invention, it is further preferred that the first substrate region has contact means for electrical contacting and / or circuit means, and that only comparatively insensitive structures are provided in the substrate at the transition between the first substrate region and the second substrate region are. Such comparatively insensitive structures are, for example, conduction paths which lead or provide contacting lines from the circuit part in the first substrate region to the active region in the second substrate region. According to the invention it is thereby possible that without loss of yield or the like. Or without additional costs alone due to a sensible arrangement of the various functional areas on the substrate of the semiconductor device and the sensor arrangement according to the invention a functionally correct transition from the first substrate region to the second substrate region is possible, ie in particular one successful sealing between an injection mold and the substrate of the sensor arrangement during encapsulation of the first substrate region with the potting compound is possible. It is further preferred that a sealing material, in particular a gel or a film, is provided at the transition between the first substrate region and the second substrate region. This advantageously makes it possible, on the one hand, to achieve greater tightness between the injection molding tool and the substrate and, on the other hand, to provide better protection for the structures of the substrate located in the transition region between the first substrate region and the second substrate region. This also leads to the fact that even more sensitive structures in this transition region can be localized, so that overall the required chip area for producing the substrate of the sensor arrangement can be reduced.
Ein weiterer Gegenstand der vorliegenden Erfindung ist ein Verfahren zur Herstellung einer erfindungsgemäßen Sensoranordnung, wobei insbesondere das Gehäuse durch Umspritzen des Substrats hergestellt wird und wobei das Substrat lediglich in seinem ersten Substratbereich von dem Gehäuse im wesentlichen vollständig umgeben wird. Der restliche Substratbereich (zweiter Substratbereich) ragt dem gegenüber aus dem Gehäuse heraus. Bevorzugt ist hierbei, dass beim Umspritzen zur Abdichtung eines Spritzwerkzeugs zwischen dem ersten Substratbereich und dem zweiten Substratbereich ein Teil des Spritzwerkzeugs entweder direkten Kontakt mit dem Substrat hat oder dass beim Umspritzen zur Abdichtung eines Spritzwerkzeuges zwischen dem ersten Substratbereich und dem zweiten Substratbereich ein Teil des Spritzwerkzeuges auf ein Abdichtmaterial drückt. Das Abdichtmaterial kann hierbei entweder bei der Herstellung des Gehäuses in die Sensoranordnung eingebaut werden, beispielsweise durch Aufbringen des
Abdichtmaterials auf das Substrat (zwischen dem ersten und dem zweiten Substratbereich) und anschließendem Vergießen des Gehäusematerials, d.h. anschließendem zumindest teilweise Einbetten auch des Abdichtmaterials in das Gehäuse (Verbrauch des Abdichtmaterials bei der Herstellung des Gehäuses). Alternativ dazu kann das Abdichtmaterial auch Teil eines Spritzwerkzeugs bzw. zumindest an diesem zur Abdichtung angebracht vorgesehen sein (etwa als Abdichtfolie oder als weiche Abdichtmasse). In diesem Fall wird das Abdichtmaterial zumindest nicht in wesentlichem Maße in das Gehäuse eingebettet.Another object of the present invention is a method for producing a sensor arrangement according to the invention, wherein in particular the housing is produced by encapsulation of the substrate and wherein the substrate is substantially completely surrounded by the housing only in its first substrate region. The remaining substrate region (second substrate region) projects out of the housing opposite. In this case, it is preferred that, during encapsulation for sealing an injection molding tool between the first substrate region and the second substrate region, a part of the injection molding tool either has direct contact with the substrate or that during encapsulation for sealing an injection molding tool between the first substrate region and the second substrate region, a part of the injection molding tool presses on a sealing material. The sealing material can be incorporated either in the manufacture of the housing in the sensor assembly, for example by applying the Sealing material on the substrate (between the first and the second substrate portion) and then casting of the housing material, ie, then at least partially embedding also the sealing material in the housing (consumption of the sealing material in the manufacture of the housing). Alternatively, the sealing material may also be provided as part of an injection molding tool or at least attached thereto for sealing (for example as a sealing film or as a soft sealing compound). In this case, the sealing material is at least not substantially embedded in the housing.
Zeichnungendrawings
Ausführungsbeispiele der Erfindung sind in der Zeichnung dargestellt und in der nachfolgenden Beschreibung näher erläutert.Embodiments of the invention are illustrated in the drawings and explained in more detail in the following description.
Es zeigen Figur 1 eine schematische Draufsicht auf eine erfindungsgemäße Sensoranordnung,FIG. 1 shows a schematic plan view of a sensor arrangement according to the invention,
Figur 2 eine schematische Darstellung einer Schnittdarstellung durch eine erfindungsgemäße Sensoranordnung in Anlehnung an die Schnittlinie AA aus Figur 1 , Figur 3 eine schematische Draufsicht auf eine erfindungsgemäße Sensoranordnung mit weiteren Details zum Inneren der Sensoranordnung, Figur 4 eine schematische Draufsicht einer zweiten Ausführungsform einer erfindungsgemäßen Sensoranordnung,FIG. 2 shows a schematic illustration of a sectional view through a sensor arrangement according to the invention, based on the section line AA from FIG. 1, FIG. 3 shows a schematic plan view of a sensor arrangement according to the invention with further details on the interior of the sensor arrangement; FIG. 4 shows a schematic plan view of a second embodiment of a sensor arrangement according to the invention;
Figur 5 eine schematische Schnittdarstellung der zweiten Ausführungsform der erfindungsgemäßen Sensoranordnung in Anlehnung an die Schnittlinie AA aus Figur 4 undFigure 5 is a schematic sectional view of the second embodiment of the sensor arrangement according to the invention based on the section line AA of Figure 4 and
Figur 6 eine schematische Schnittdarstellung einer dritten Ausführungsform einer erfindungsgemäßen Sensoranordnung.Figure 6 is a schematic sectional view of a third embodiment of a sensor arrangement according to the invention.
In Figur 1 ist eine schematische Draufsicht auf eine erfindungsgemäße Sensoranordnung 10 dargestellt. Diese Sensoranordnung 10 umfasst ein Gehäuse 30 und ein Substrat 20. Das Substratmaterial ist insbesondere als ein Halbleitermaterial bzw. als ein Verbundsubstrat beispielsweise von Wafern unterschiedlicher oder gleicher Materialien vorgesehen. Im folgenden wird das Substratmaterial als Substrat 20 bezeichnet. Das Substrat 20 weist einen ersten Bereich 21 und einen zweiten Bereich 22
auf, wobei im zweiten Bereich 22 ein aktiver Bereich 23 gesondert dargestellt ist, der zur Sensierung bzw. zur Erfassung einer Größe dient, die mittels der erfindungsgemäßen Sensoranordnung 10 gemessen werden soll. Im zweiten Substratbereich 22 ist im Übergangsbereich zum ersten Substratbereich 21 eine Öffnung 33 in dem Gehäuse 30 vorhanden, so dass der zweite Substratbereich 22 herausragen kann. Bei der mittels des aktiven Bereichs 23 detektierbaren Größe handelt es sich insbesondere um eine solche, welche lediglich mittels eines wenigstens mittelbaren Kontakts zwischen dem zweiten Substratbereich 22 bzw. insbesondere dem aktiven Bereich 23 und einem in den Figuren nicht dargestellten Medium detektierbar ist. Bei dem Medium kann es sich beispielsweise um ein Gas handeln, dessen Druck mittels einer Druckmessmembran als aktiven Bereich 23 gemessen werden soll. Hierbei muss das Medium, etwas Luft oder ein anderes Gas, Zugang zu dem Bereich 23, d. h. insbesondere zu der Druckmessmembran, haben. Dieser Zugang zum aktiven Bereich 23 wird erfindungsgemäß dadurch realisiert, dass der zweite Substratbereich 22 aus dem Gehäuse 30 herausragt und dass der erste Substratbereich 21 in dem Gehäuse 30 eingebettet ist. In Figur 1 ist eine Schnittlinie AA eingezeichnet, wobei die Figur 2 mit gewissen Abwandlungen eine schematische Darstellung der erfindungsgemäßen Sensoranordnung 10 gemäß der Schnittlinie AA aus der Figur 1 ist. In Figur 1 ist noch erkennbar, dass aus dem Gehäuse 30 insbesondere Anschlusselemente 31 , wie beispielsweise Pins oder Kontaktierungsbeinchen oder dgl., herausstehen. Es ist jedoch erfindungsgemäß ebenso möglich, dass keine Kontaktierungselemente 31 aus dem Gehäuse 30 herausstehen, sondern dass auf der Oberseite, der Unterseite und/oder den lateralen Flächen des Gehäuses 30 Kontaktflächen (nicht dargestellt) vorhanden sind, die einer Kontaktierung des Bauelements bzw. der Sensoranordnung dienen, beispielsweise mittels einer Flip- Chip-Montagemöglichkeit oder dgl.FIG. 1 shows a schematic plan view of a sensor arrangement 10 according to the invention. This sensor arrangement 10 comprises a housing 30 and a substrate 20. The substrate material is provided in particular as a semiconductor material or as a composite substrate, for example, of wafers of different or identical materials. In the following, the substrate material is referred to as substrate 20. The substrate 20 has a first region 21 and a second region 22 on, wherein in the second region 22, an active region 23 is shown separately, which serves for sensing or for detecting a size to be measured by means of the sensor arrangement 10 according to the invention. In the second substrate region 22, an opening 33 is provided in the housing 30 in the transition region to the first substrate region 21, so that the second substrate region 22 can protrude. The variable which can be detected by means of the active region 23 is, in particular, one which can be detected only by means of at least indirect contact between the second substrate region 22 or in particular the active region 23 and a medium not shown in the figures. The medium may be, for example, a gas whose pressure is to be measured by means of a pressure measuring membrane as the active region 23. In this case, the medium, some air or another gas, must have access to the region 23, ie in particular to the pressure measuring membrane. This access to the active region 23 is realized according to the invention in that the second substrate region 22 protrudes from the housing 30 and that the first substrate region 21 is embedded in the housing 30. FIG. 1 shows a section line AA, with FIG. 2, with certain modifications, being a schematic illustration of the sensor arrangement 10 according to the invention according to the section line AA from FIG. In FIG. 1, it can still be seen that, in particular, connecting elements 31, such as, for example, pins or contacting legs or the like, protrude from the housing 30. However, it is according to the invention also possible that no contacting elements 31 protrude from the housing 30, but that on the top, the bottom and / or the lateral surfaces of the housing 30 contact surfaces (not shown) are present, the contact of the device or the Sensor arrangement serve, for example by means of a flip-chip mounting option or the like.
In Figur 2 ist die erfindungsgemäße Sensoranordnung 10 mit dem ersten Substratbereich 21 , dem zweiten Substratbereich 22, dem aktiven Bereich 23, dem Gehäuse 30 und der Öffnung 33 dargestellt. Zusätzlich ist in Figur 2 noch eine spezielle beispielhafte Ausführungsform angedeutet, bei der zusätzlich zu dem Substrat 20 ein weiteres Substrat 26 vorhanden ist, welches beispielsweise weitere Schaltungsmittel zur Auswertung der Signale des aktiven Bereichs 23 umfasst. Hierzu ist das Substrat 20 und das weitere Substrat 26 mittels einer
Verbindungsleitung 27, insbesondere in Form eines Bonddrahtes 27 miteinander verbunden. Sowohl das Substrat 20 als auch das weitere Substrat 26 ist im Beispiel der Anordnung der Figur 2 auf einem sogenannten Leitungsgitter 25, welches auch als Leadframe 25 bezeichnet wird, angeordnet bzw. auf dem Leadframe 25 verklebt oder in sonstiger Weise befestigt.FIG. 2 shows the sensor arrangement 10 according to the invention with the first substrate region 21, the second substrate region 22, the active region 23, the housing 30 and the opening 33. In addition, a specific exemplary embodiment is indicated in FIG. 2, in which, in addition to the substrate 20, a further substrate 26 is present which, for example, comprises further circuit means for evaluating the signals of the active region 23. For this purpose, the substrate 20 and the further substrate 26 by means of a Connecting line 27, in particular in the form of a bonding wire 27 connected to each other. In the example of the arrangement of FIG. 2, both the substrate 20 and the further substrate 26 are arranged on a so-called conductive grid 25, which is also referred to as the leadframe 25, or adhesively bonded or otherwise secured to the leadframe 25.
In Figur 3 ist eine weitere schematische Draufsicht auf die erfindungsgemäße Sensoranordnung dargestellt, wobei in Figur 3 weitere Details des Inneren der Sensoranordnung 10 sichtbar sind, etwa neben dem Substrat 20, dem ersten Substratbereich 21 , dem zweiten Substratbereich 22, dem aktiven Bereich 23, dem weiteren Substrat 26 und den Bonddrähten 27, weitere Bonddrähte 32 zur Kontaktierung des weiteren Substrats 26 mit den Anschlusselementen 31. Zusätzlich ist in Figur 3 der Leadframe bzw. das Leitungsgitter 25 dargestellt.FIG. 3 shows a further schematic plan view of the sensor arrangement according to the invention, with further details of the interior of the sensor arrangement 10 being visible in FIG. 3, for example next to the substrate 20, the first substrate region 21, the second substrate region 22, the active region 23 further substrate 26 and the bonding wires 27, further bonding wires 32 for contacting the further substrate 26 with the connecting elements 31. In addition, the leadframe 25 is shown in FIG.
In Figur 4 ist eine zweite Ausführungsform der erfindungsgemäßen Sensoranordnung 10 in einer schematischen Draufsicht dargestellt. Wiederum weist das Substrat 20 den ersten Substratbereich 21 und den zweiten Substratbereich 22 auf, wobei der zweite Substratbereich 22 einerseits den aktiven Bereich 23 umfasst und andererseits an der Öffnung 33 aus dem Gehäuse 30 herausragt. Im Gegensatz zum ersten Ausführungsbeispiel weist jedoch das Gehäuse 30 einen Verlängerungsbereich 35 auf, der im wesentlichen in der Hauptebene des Substrats 20 um den zweiten Substratbereich 22 herum sich erstreckt und damit den zweiten Substratbereich 22 insbesondere vor mechanischen Einwirkungen schützt. Hierbei werden jedoch die Vorteile der vorliegenden erfindungsgemäßen Sensoranordung insoweit realisiert, als der Zusatzbereich 35 bzw. Verlängerungsbereich 35 des Gehäuses den zweiten Substratbereich 22 zwar schützt, jedoch keine mechanischen Kräfte, beispielsweise durch unterschiedliche Temperaturkoeffizienten oder dgl. auf den zweiten Substratbereich 22 und insbesondere auf den aktiven Bereich 23 der Sensoranordnung ausübt. Dies deshalb, weil der Verlängerungsbereich 35 einen Abstand zum zweiten Substratbereich 22 einhält, wobei dieser Abstand mittels des Bezugszeichens 24 in der Figur 4 angedeutet ist. Die Figur 4 weist weiterhin eine Schnittlinie AA auf, wobei die Figur 5 im wesentlichen eine Schnittdarstellung (mit gewissen Abweichungen) entlang der Schnittlinie AA aus der Figur 4 darstellt.
In Figur 5 ist die erwähnte, schematische Schnittdarstellung entlang der Schnittlinie AA (mit Abweichungen) aus der Figur 4 dargestellt, wobei die erfindungsgemäße Sensoranordnung 10 wiederum das Substrat 20, den ersten Substratbereich 21 , den zweiten Substratbereich 22, den aktiven Bereich 23, das weitere Substrat 26, den Verlängerungsbereich 35 und das Leitungsgitter 25 bzw. den Leadframe 25 umfasst.FIG. 4 shows a second embodiment of the sensor arrangement 10 according to the invention in a schematic plan view. Again, the substrate 20 has the first substrate region 21 and the second substrate region 22, wherein the second substrate region 22 on the one hand comprises the active region 23 and on the other hand protrudes from the housing 30 at the opening 33. In contrast to the first exemplary embodiment, however, the housing 30 has an extension region 35, which extends essentially in the main plane of the substrate 20 around the second substrate region 22 and thus protects the second substrate region 22, in particular against mechanical influences. In this case, however, the advantages of the present sensor arrangement according to the invention are realized insofar as the additional region 35 or extension region 35 of the housing protects the second substrate region 22, but no mechanical forces, for example due to different temperature coefficients or the like on the second substrate region 22 and in particular on the active region 23 of the sensor arrangement exerts. This is because the extension region 35 maintains a distance from the second substrate region 22, this distance being indicated by the reference numeral 24 in FIG. FIG. 4 also has a section line AA, with FIG. 5 essentially showing a sectional illustration (with certain deviations) along section line AA from FIG. FIG. 5 shows the above-mentioned, schematic sectional representation along the section line AA (with deviations) from FIG. 4, wherein the sensor arrangement 10 according to the invention again comprises the substrate 20, the first substrate region 21, the second substrate region 22, the active region 23, the other Substrate 26, the extension portion 35 and the wiring grid 25 and the leadframe 25 includes.
In Figur 6 ist schematisch eine dritte Ausführungsform der erfindungsgemäßen Sensoranordnung dargestellt, wobei das Substrat 20 wiederum den ersten Substratbereich 21 , den zweiten Substratbereich 22 und den aktiven Bereich 23 umfasst, wobei jedoch im Übergangsbereich zwischen dem ersten Substratbereich 21 und dem zweiten Substratbereich 22, d.h. im Bereich der Öffnung 33, ein Abdichtmaterial 29 vorgesehen ist, welches bei der Herstellung des Gehäuses 30 der Sensoranordnung 10 insofern Verwendung findet, als ein nicht dargestelltes Spritzwerkzeug bzw. Spritzgusswerkzeug einer Vorrichtung zur Umspritzung des ersten Substratbereichs 21 mit dem Gehäusematerial keinen direkten Kontakt bzw. keine direkten Druckkräfte auf das Substrat 20 im Übergangsbereich zwischen dem ersten Substratbereich 21 und dem zweiten Substratbereich 22 ausüben muss, sondern auf das Abdichtmaterial 29 drückt und somit die in diesem Substratbereich vorhandenen Strukturen vor diesen anzuwendenden Druckkräften schützt. Das Material des Gehäuses 30 kann somit in dem zu umspritzenden Bereich (erster Substratbereich 21 ) mit dem benötigten Druck und der benötigten Temperatur eingefüllt werden, was darüber hinaus nicht zu einer Beeinträchtigung der Geschwindigkeit des Herstellungsprozesses der erfindungsgemäßen Sensoranordnung 10 führt. Es ist nämlich eines der Hauptprobleme beim Umspritzen lediglich eines Teilbereichs 21 des Substrats 20, dass das Abdichten des Werkzeugs gegen die Moldmasse bzw. gegen die Vergussmasse des Gehäuses 30 potentielle Probleme birgt. Aufgrund von Toleranzen muss beim Abdichten überpresst werden, da sonst überschüssige Kunststoffmasse (Flash) in den aktiven Bereich 23 des Sensors bzw. des Substrats 20 fließt und dort störende Beläge der Vergussmasse verursacht. Zur Lösung dieses Problems ist es erfindungsgemäß jedoch vorgesehen, dass sich im Bereich des Übergangs zwischen dem ersten und zweiten Substratbereich bzw. im Bereich einer benötigten Dichtung durch das Spritzwerkzeug entweder keine aktiven Strukturen, sondern nur Leiterbahnen befinden oder aber dass eine Abdichtung durch Aufdrücken des Werkzeugs direkt auf das Silizium vermieden wird und
die Abdichtung mittels weicher Massen, wie beispielsweise Gele oder Folien realisiert wird. Als weitere erfindungsgemäße Möglichkeit ist weiterhin vorgesehen, sowohl keine aktiven bzw. empfindlichen Strukturen im Bereich einer benötigten Dichtung vorzusehen und zusätzlich eine Abdichtung mittels weicher Massen (Abdichtmaterial 29) vorzusehen. Das Abdichtmaterial 29 kann erfindungsgemäß entweder - wie in Figur 6 dargestellt - in das Gehäuse 30 eingebettet werden (d.h. an der fertiggestellten Sensoranordnung 10 verbleiben) oder aber in einer nicht dargestellten alternativen Ausführungsform, insbesondere des erfindungsgemäßen Verfahrens, lediglich am Spritzwerkzeug vorgesehen sein, so dass das Spritzwerkzeug zur Abdichtung nicht mit einem „harten" Material auf das Substrat 20 drückt, sondern mit einem weichen Material wie einem Film oder einem Gel. Im letztgenannten Fall wird das Abdichtmaterial 29 nicht (bzw. zumindest nicht zu wesentlichen Teilen) in das Gehäuse 30 eingebettet.FIG. 6 schematically illustrates a third embodiment of the sensor arrangement according to the invention, the substrate 20 again comprising the first substrate region 21, the second substrate region 22 and the active region 23, but in the transition region between the first substrate region 21 and the second substrate region 22, ie in the region of the opening 33, a sealing material 29 is provided, which is used in the manufacture of the housing 30 of the sensor assembly 10 insofar as an injection molding tool or injection molding tool, not shown, of a device for encapsulation of the first substrate portion 21 with the housing material no direct contact or does not have to exert direct compressive forces on the substrate 20 in the transition region between the first substrate region 21 and the second substrate region 22, but presses on the sealing material 29 and thus the structures present in this substrate region in front of these applied pressure force protects. The material of the housing 30 can thus be filled in the area to be extrusion-coated (first substrate area 21) with the required pressure and the required temperature, which furthermore does not lead to an impairment of the speed of the production process of the sensor arrangement 10 according to the invention. Namely, it is one of the main problems in coating only a portion 21 of the substrate 20, that the sealing of the tool against the molding compound or against the potting compound of the housing 30 has potential problems. Due to tolerances must be over-pressed during sealing, otherwise excess plastic material (Flash) flows into the active region 23 of the sensor or the substrate 20 and causes disturbing deposits of the potting compound there. To solve this problem, it is inventively provided, however, that in the region of the transition between the first and second substrate region or in the region of a required seal by the injection tool either no active structures, but only tracks are or that a seal by pressing the tool is avoided directly on the silicon and the seal is realized by means of soft masses, such as gels or foils. As a further possibility according to the invention, it is further provided not to provide any active or sensitive structures in the region of a required seal and additionally to provide a seal by means of soft masses (sealing material 29). The sealing material 29 according to the invention either - as shown in Figure 6 - are embedded in the housing 30 (ie remain on the finished sensor assembly 10) or in an alternative embodiment, not shown, in particular the method according to the invention, only be provided on the injection mold, so that In the latter case, the sealing material 29 does not (or at least not substantially) penetrate into the housing 30 embedded.
Die Seite des Siliziums ist dabei schwieriger abzudichten, da ggf. eine Winkelverdrehung zur Spaltbildung beiträgt. Hierbei ist es günstig, dass die aktive Fläche des Sensors an der Oberseite des Balkens bzw. des im zweiten Substratbereich 22 herausstehenden Substrats 20 angeordnet ist und somit eine geringfügige seitliche Flashbildung (d.h. an den seitlichen Schmalseiten des Substrats 20) für die Funktion des Sensors nicht kritisch ist. Die dritte Ausführungsform der erfindungsgemäßen Sensoranordnung 10 kann selbstverständlich mit der ersten und/oder der zweiten Ausführungsform kombiniert werden.The side of the silicon is thereby more difficult to seal, since possibly an angular rotation contributes to the formation of a gap. In this case, it is favorable that the active area of the sensor is arranged on the upper side of the beam or the substrate 20 projecting in the second substrate area 22 and thus does not cause a slight lateral flash formation (ie on the lateral narrow sides of the substrate 20) for the function of the sensor is critical. The third embodiment of the sensor arrangement 10 according to the invention can of course be combined with the first and / or the second embodiment.
Erfindungsgemäß ist es sowohl möglich, dass der Sensor von der Auswertelektronik getrennt ist, dass also innerhalb der Sensoranordnung 10, wie in den Figuren 2, 3 und 5 abgebildet, ein sogenanntes Zwei-Chipmodul vorgesehen ist oder auch dass der Sensor bzw. das Substrat 20 bereits die Auswerteelektronik umfasst und daher ein weiteres Substrat 26 nicht erforderlich ist, so dass die Sensoranordnung 10 als Ein-Chipmodul realisiert werden kann.According to the invention, it is possible for the sensor to be separated from the evaluation electronics, ie a so-called two-chip module is provided within the sensor arrangement 10, as shown in FIGS. 2, 3 and 5, or for the sensor or the substrate 20 already includes the evaluation and therefore a further substrate 26 is not required, so that the sensor assembly 10 can be implemented as a single-chip module.
Die erste Ausführungsform der erfindungsgemäßen Sensoranordnung 10 (Figuren 1 , 2 und 3) ist besonders vorteilhaft, wenn eine möglichst kleine Abmessung der Sensoranordnung gewünscht wird oder das Sensorelement, etwa für Biosensoren oder dgl. in eine Flüssigkeit oder generell in ein Fluid eintauchen soll, die das Moldcom-
pound bzw. die Vergussmasse des Gehäuses 30 nicht berühren sollte. Die Gehäuseform der Sensoranordnung 10 gemäß der zweiten Ausführungsform (Figur 4 und 5), bei der der Verlängerungsbereich 35 des Gehäuses 30 ringsum den zweiten Substratbereich 22 geführt ist und den aktiven Bereich 23 schützt, bietet einen maximalen Schutz gegenüber mechanischen Einflüssen auf das Sensorelement 23 bzw. den aktiven Bereich 23 der Sensoranordnung 10. Erfindungsgemäß berührt der zweite Substratbereich 22 das Gehäuse 30 nur an einer seiner Seiten (bzw. den Verlängerungsbereich 35 überhaupt nicht). Bei dem Gehäuse 30 kann es sich erfindungsgemäß um eine Gehäuseform mit Pins bzw. mit Anschlussbeinchen oder auch um eine moderne „Leadless"-Form handeln.
The first embodiment of the sensor arrangement 10 according to the invention (FIGS. 1, 2 and 3) is particularly advantageous if the smallest possible dimension of the sensor arrangement is desired or if the sensor element, for example for biosensors or the like, is to dip into a liquid or generally into a fluid which the Moldcom pound or the potting compound of the housing 30 should not touch. The housing shape of the sensor arrangement 10 according to the second embodiment (FIGS. 4 and 5), in which the extension area 35 of the housing 30 is guided all around the second substrate area 22 and protects the active area 23, offers maximum protection against mechanical influences on the sensor element 23 or the active region 23 of the sensor assembly 10. According to the invention, the second substrate region 22 only contacts the housing 30 on one of its sides (or the extension region 35 at all). According to the invention, the housing 30 may be a housing form with pins or with connection legs or even a modern "leadless" form.
Claims
1. Sensoranordnung (10) mit einem Substrat (20) und mit einem Gehäuse (30), wobei das Gehäuse (30) das Substrat (20) in einem ersten Substratbereich (21 ) im wesentlichen vollständig umgibt, wobei das Gehäuse (30) in einem zweiten Substratbereich (22) zumindest teilweise mittels einer Öffnung (33) geöffnet vorgesehen ist, dadurch gekennzeichnet, dass im Bereich der Öffnung (33) der zweite Substratbereich (22) aus dem Gehäuse (30) ragend vorgesehen ist.A sensor assembly (10) having a substrate (20) and a housing (30), said housing (30) substantially completely surrounding said substrate (20) in a first substrate region (21), said housing (30) being in a second substrate region (22) is provided at least partially open by means of an opening (33), characterized in that in the region of the opening (33) of the second substrate region (22) is provided projecting from the housing (30).
2. Sensoranordnung (10) nach Anspruch 1 , dadurch gekennzeichnet, dass das Substrat (20) nur im ersten Substratbereich (21 ) in das Gehäuse (30) eingebettet vorgesehen ist.2. Sensor arrangement (10) according to claim 1, characterized in that the substrate (20) is provided embedded only in the first substrate region (21) in the housing (30).
3. Sensoranordnung (10) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der erste Substratbereich (21 ) und der zweite Substratbereich (22) monolithisch verbunden vorgesehen sind.3. Sensor arrangement (10) according to one of the preceding claims, characterized in that the first substrate region (21) and the second substrate region (22) are provided monolithically connected.
4. Sensoranordnung (10) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass als Gehäuse (30) eine Spritzgussmasse vorgesehen ist.4. Sensor arrangement (10) according to one of the preceding claims, characterized in that as the housing (30) an injection molding compound is provided.
5. Sensoranordnung (10) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass das Gehäuse (30) den zweiten Substratbereich (22) zumindest in einer Hauptebene des Substrats (20) beabstandet zumindest teilweise umgibt.5. Sensor arrangement (10) according to one of the preceding claims, characterized in that the housing (30) the second substrate region (22) at least in a main plane of the substrate (20) spaced at least partially surrounds.
6. Sensoranordnung (10) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der zweite Substratbereich (22) einen aktiven Bereich zur Sensierung einer oder mehrerer, lediglich mittels eines wenigstens mittelbaren Kontakts zumindest eines Teils der Sensoranordnung mit einem Medium, detektierbarer Größe oder Größen aufweist.6. Sensor arrangement (10) according to one of the preceding claims, characterized in that the second substrate region (22) has an active region for sensing one or more, only by means of at least an indirect contact at least a portion of the sensor array with a medium, detectable size or sizes having.
7. Sensoranordnung (10) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der erste Substratbereich (21 ) Kontaktmittel zur elektrischen Kontaktierung und/oder Schaltungsmittel aufweist und dass am Übergang zwischen dem ersten Substratbereich (21 ) und dem zweiten Substratbereich (22) lediglich vergleichsweise unempfindliche Strukturen im Substrat (20) vorgesehen sind.7. Sensor arrangement (10) according to one of the preceding claims, characterized in that the first substrate region (21) contact means for has electrical contacting and / or circuit means and that only comparatively insensitive structures in the substrate (20) are provided at the transition between the first substrate region (21) and the second substrate region (22).
8. Sensoranordnung (10) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass am Übergang zwischen dem ersten Substratbereich (21 ) und dem zweiten Substratbereich (22) ein Abdichtmaterial (29), insbesondere ein Gel oder eine Folie, vorgesehen ist.8. Sensor arrangement (10) according to one of the preceding claims, characterized in that at the transition between the first substrate region (21) and the second substrate region (22) a sealing material (29), in particular a gel or a film is provided.
9. Verfahren zur Herstellung einer Sensoranordnung (10) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass das Gehäuse (30) durch Umspritzen des Substrats (20) hergestellt wird, wobei das Substrat (20) lediglich in seinem ersten Substratbereich (21 ) von dem Gehäuse (30) im wesentlichen vollständig umgeben wird.9. A method for producing a sensor arrangement (10) according to one of the preceding claims, characterized in that the housing (30) is produced by encapsulation of the substrate (20), wherein the substrate (20) only in its first substrate region (21) of the housing (30) is substantially completely surrounded.
10. Verfahren nach Anspruch 9, dadurch gekennzeichnet, dass beim Umspritzen zur Abdichtung eines Spritzwerkzeugs zwischen dem ersten Substratbereich (21 ) und dem zweiten Substratbereich (22) ein Teil des Spritzwerkzeugs entweder direkten Kontakt mit dem Substrat (20) hat oder dass beim Umspritzen zur Abdichtung eines Spritzwerkzeugs zwischen dem ersten Substratbereich (21 ) und dem zweiten Substratbereich (22) ein Teil des Spritzwerkzeugs auf ein Abdichtmaterial (29) drückt. 10. The method according to claim 9, characterized in that during encapsulation for sealing an injection molding tool between the first substrate region (21) and the second substrate region (22) has a part of the injection mold either direct contact with the substrate (20) or that during encapsulation Sealing an injection mold between the first substrate portion (21) and the second substrate portion (22) presses a part of the injection mold on a sealing material (29).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200510038443 DE102005038443A1 (en) | 2005-08-16 | 2005-08-16 | Sensor arrangement with a substrate and with a housing and method for producing a sensor arrangement |
PCT/EP2006/063999 WO2007020132A1 (en) | 2005-08-16 | 2006-07-07 | Sensor arrangement comprising a substrate and a housing and method for producing a sensor arrangement |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1917509A1 true EP1917509A1 (en) | 2008-05-07 |
Family
ID=36942399
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP06777639A Withdrawn EP1917509A1 (en) | 2005-08-16 | 2006-07-07 | Sensor arrangement comprising a substrate and a housing and method for producing a sensor arrangement |
Country Status (6)
Country | Link |
---|---|
US (1) | US20090072333A1 (en) |
EP (1) | EP1917509A1 (en) |
JP (1) | JP2009505088A (en) |
CN (1) | CN101253399A (en) |
DE (1) | DE102005038443A1 (en) |
WO (1) | WO2007020132A1 (en) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006044442A1 (en) * | 2006-09-21 | 2008-03-27 | Robert Bosch Gmbh | Sensor arrangement with a substrate and with a housing and method for producing a sensor arrangement |
DE102007022852A1 (en) * | 2007-05-15 | 2008-11-20 | Robert Bosch Gmbh | Differential pressure sensor arrangement and corresponding manufacturing method |
DE102007057902A1 (en) * | 2007-11-29 | 2009-06-04 | Continental Automotive Gmbh | Sensor module and method for its production |
DE102007057904A1 (en) * | 2007-11-29 | 2009-06-04 | Continental Automotive Gmbh | Sensor module and method for producing the sensor module |
EP2090873B1 (en) | 2008-02-14 | 2011-06-01 | Elmos Advanced Packaging B.V. | Integrated circuit package |
DE102008011943B4 (en) | 2008-02-29 | 2012-04-26 | Robert Bosch Gmbh | Sensor arrangement for differential pressure measurement |
ITTO20080485A1 (en) * | 2008-06-19 | 2009-12-20 | Eltek Spa | PRESSURE SENSOR DEVICE |
DE102008043271A1 (en) | 2008-10-29 | 2010-05-06 | Robert Bosch Gmbh | Sensor arrangement for differential pressure measurement |
DE102008043517B4 (en) | 2008-11-06 | 2022-03-03 | Robert Bosch Gmbh | Sensor module and method for manufacturing a sensor module |
DE102008044098A1 (en) | 2008-11-27 | 2010-06-02 | Robert Bosch Gmbh | Sensor arrangement for differential pressure measurement, has micro-mechanical sensor element, where volume between separation membrane and measuring diaphragm is filled by incompressible transmission medium |
JP5175974B2 (en) * | 2009-03-31 | 2013-04-03 | アルプス電気株式会社 | Capacitive humidity sensor and manufacturing method thereof |
JP2011228492A (en) * | 2010-04-20 | 2011-11-10 | Denso Corp | Semiconductor device and method of manufacturing the same |
DE102010043982A1 (en) * | 2010-11-16 | 2011-12-15 | Robert Bosch Gmbh | Sensor arrangement, has mold-housing comprising access port provided with sensitive region and sense element, and stress decoupling structure formed in sense element, where sense element is formed between mold-housing and sensitive region |
JP5541208B2 (en) * | 2011-03-24 | 2014-07-09 | 株式会社デンソー | Mechanical quantity sensor |
JP5333529B2 (en) * | 2011-07-05 | 2013-11-06 | 株式会社デンソー | Mold package manufacturing method |
JP5974777B2 (en) * | 2012-09-26 | 2016-08-23 | 株式会社デンソー | Mold package manufacturing method |
DE102014006037A1 (en) * | 2013-04-29 | 2014-10-30 | Elmos Semiconductor Ag | MEMS sensor for difficult environments and media |
US9448130B2 (en) | 2013-08-31 | 2016-09-20 | Infineon Technologies Ag | Sensor arrangement |
JP6156233B2 (en) * | 2014-04-01 | 2017-07-05 | 株式会社デンソー | Pressure sensor |
JP6194859B2 (en) * | 2014-07-10 | 2017-09-13 | 株式会社デンソー | Semiconductor device and manufacturing method thereof |
JP6492708B2 (en) * | 2015-02-04 | 2019-04-03 | 株式会社デンソー | Pressure sensor device |
US9952110B2 (en) * | 2016-03-29 | 2018-04-24 | Infineon Technologies Ag | Multi-die pressure sensor package |
EP3499560B1 (en) * | 2017-12-15 | 2021-08-18 | Infineon Technologies AG | Semiconductor module and method for producing the same |
EP3683031A1 (en) | 2019-01-21 | 2020-07-22 | Melexis Technologies NV | Method of manufacturing a sensor device and moulding support structure |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19929026B4 (en) * | 1999-06-25 | 2011-02-24 | Robert Bosch Gmbh | Method for producing a pressure sensor |
JP2002026168A (en) * | 2000-06-30 | 2002-01-25 | Hitachi Ltd | Semiconductor device and its manufacturing method |
TW454287B (en) * | 2000-12-06 | 2001-09-11 | Siliconware Precision Industries Co Ltd | Multi-media chip package and its manufacture |
DE10319470A1 (en) * | 2003-04-29 | 2004-11-25 | W. C. Heraeus Gmbh & Co. Kg | Metal-plastic composite component and method for its production |
DE102004019428A1 (en) * | 2004-04-19 | 2005-08-04 | Infineon Technologies Ag | Semiconductor component with hollow space housing as for sensor chips has plastic housing and carrier for wiring plate |
-
2005
- 2005-08-16 DE DE200510038443 patent/DE102005038443A1/en not_active Withdrawn
-
2006
- 2006-07-07 WO PCT/EP2006/063999 patent/WO2007020132A1/en active Application Filing
- 2006-07-07 US US12/063,785 patent/US20090072333A1/en not_active Abandoned
- 2006-07-07 CN CNA2006800297488A patent/CN101253399A/en active Pending
- 2006-07-07 EP EP06777639A patent/EP1917509A1/en not_active Withdrawn
- 2006-07-07 JP JP2008526465A patent/JP2009505088A/en not_active Withdrawn
Non-Patent Citations (1)
Title |
---|
See references of WO2007020132A1 * |
Also Published As
Publication number | Publication date |
---|---|
JP2009505088A (en) | 2009-02-05 |
WO2007020132A1 (en) | 2007-02-22 |
US20090072333A1 (en) | 2009-03-19 |
DE102005038443A1 (en) | 2007-02-22 |
CN101253399A (en) | 2008-08-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2007020132A1 (en) | Sensor arrangement comprising a substrate and a housing and method for producing a sensor arrangement | |
DE102009038706B4 (en) | sensor device | |
DE69209772T2 (en) | HOUSING ARRANGEMENT FOR A FUNCTIONAL COMPONENT AND MANUFACTURING METHOD | |
DE10351761B4 (en) | Sensor for a dynamic size | |
DE10246283B3 (en) | Production of an electronic component used in semiconductor sensors comprises preparing a semiconductor chip on a switching substrate, applying a sacrificial part on the sensor region of the chip and further processing | |
DE10054013B4 (en) | Pressure sensor module | |
WO2009092472A1 (en) | Sensor arrangement and method for producing a sensor arrangement | |
DE102014106220B4 (en) | Sensor component with two sensor functions | |
EP3144656A1 (en) | Pressure sensor system | |
DE102006056361B4 (en) | Module with polymer-containing electrical connection element and method | |
DE102004003413A1 (en) | Method for packaging semiconductor chips and corresponding semiconductor chip arrangement | |
DE102004011203A1 (en) | Method for mounting semiconductor chips and corresponding semiconductor chip arrangement | |
DE102012107403A1 (en) | Chip package module for a chip and a method for manufacturing a chip package module | |
DE102014000243A1 (en) | MEMS sensor for difficult environments and media | |
EP0215140A1 (en) | Pressure sensor | |
WO2019016320A1 (en) | Pressure sensor assembly and method for producing same | |
DE102005054631A1 (en) | Sensor arrangement with a substrate and with a housing and method for producing a sensor arrangement | |
WO2008034663A1 (en) | Sensor arrangement comprising a substrate and comprising a housing, and method for producing a sensor arrangement | |
DE102004019428A1 (en) | Semiconductor component with hollow space housing as for sensor chips has plastic housing and carrier for wiring plate | |
DE19948613A1 (en) | Electromechanical component for sensors, controllers and similar items, comprises mechanically active section which is at least partly coated with metal layer and incorporates flexural spring elements | |
DE19902450B4 (en) | Miniaturized electronic system and method suitable for its production | |
DE102006012600A1 (en) | Electronic component, electronic assembly and method for producing an electronic assembly | |
DE102014019691B4 (en) | Area-efficient pressure sensing device with an internal circuit component | |
DE102007057904A1 (en) | Sensor module and method for producing the sensor module | |
DE102006040658A1 (en) | Micromechanical sensor arrangement, has substrate with thickness of less than hundred pico meters and connected with another substrate in elongation firm manner by hard connecting layer in particular sealing glass or metal solder layers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20080317 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): DE FR GB |
|
RBV | Designated contracting states (corrected) |
Designated state(s): DE FR GB |
|
17Q | First examination report despatched |
Effective date: 20090210 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20090821 |