EP1898466B1 - Circuit semi-conducteur dans un boîtier doté d'un dispositif de contact - Google Patents
Circuit semi-conducteur dans un boîtier doté d'un dispositif de contact Download PDFInfo
- Publication number
- EP1898466B1 EP1898466B1 EP07011533.2A EP07011533A EP1898466B1 EP 1898466 B1 EP1898466 B1 EP 1898466B1 EP 07011533 A EP07011533 A EP 07011533A EP 1898466 B1 EP1898466 B1 EP 1898466B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- contact
- circuit arrangement
- contact device
- connection
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims description 62
- 239000004020 conductor Substances 0.000 claims description 16
- 239000002131 composite material Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 229910000679 solder Inorganic materials 0.000 claims description 4
- 239000011888 foil Substances 0.000 claims description 3
- 230000002441 reversible effect Effects 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 238000003466 welding Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/36—Assembling printed circuits with other printed circuits
- H05K3/361—Assembling flexible printed circuits with other printed circuits
- H05K3/365—Assembling flexible printed circuits with other printed circuits by abutting, i.e. without alloying process
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- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
- H01R12/50—Fixed connections
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- H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
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- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
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- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/325—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor
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- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/189—Printed circuits structurally associated with non-printed electric components characterised by the use of a flexible or folded printed circuit
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- H05K2201/0311—Metallic part with specific elastic properties, e.g. bent piece of metal as electrical contact
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/36—Assembling printed circuits with other printed circuits
Definitions
- the invention describes a hopped semiconductor circuit arrangement, for example a power semiconductor module, with contact devices for the electrical connection of the semiconductor components to external supply lines.
- external load connection is to be understood as meaning a connection between an inner connection element of the power semiconductor module with an external supply line, wherein the connection device is connected to the power contact devices of a power semiconductor component.
- connection will be understood in the following to mean a connection between an inner connection element of the power semiconductor module with an external supply line, wherein the connection device is connected to the control contact devices of a power semiconductor component.
- connection device is connected to the control contact devices of a power semiconductor component.
- all other external connections should be subsumed under this term by way of example of integrated circuits, which are not external load connections. Even if the semiconductor circuit arrangement according to the invention is represented by means of an embodiment as a power semiconductor module, this does not limit the generality.
- a starting point of the invention are power semiconductor modules, as exemplified by the DE 10 2004 0255 609 A1 , or the DE 103 55 925 A1 are known.
- the first document discloses a power semiconductor module in screw pressure contact.
- the external load connections of the power semiconductor module with an external printed circuit board are in this case achieved by means of a screw connection according to the prior art.
- the external control terminals are in this case formed as a connection between a spring contact element and a conductor track portion of the external printed circuit board.
- a pressure introduction to the control terminals by the arrangement and screwing of the printed circuit board with the load connection elements takes place for electrical contacting.
- the design of a power semiconductor module in the aforementioned type is particularly suitable for current loads of the load terminals of more than 10 amps.
- the DE 103 55 925 A1 discloses a connecting device for power semiconductor components consisting of a film composite of a first and a second conductive foil with an insulating intermediate layer.
- the power semiconductor components are permanently securely electrically connected to the first conductive layer by means of ultrasonic welding.
- the module-internal circuit-compatible connection of the power semiconductor components which contains both internal load and control connections, is disclosed here. However, the cited document does not disclose details of the external load and control connections.
- the not pre-published DE 10 2006 013 078 discloses a power semiconductor module having a housing, a substrate with conductor tracks and power semiconductor components arranged in a circuitally appropriate manner on these conductor tracks. Furthermore, the power semiconductor module has a connection device, wherein this each consists of a film composite of a first and a second conductive layer with an insulating layer arranged between these conductive layers.
- the GB 578 576 A discloses an electrical contact plug for a plurality of coaxially formed contact terminals. Furthermore, the application discloses a contact pin, which has a first contact part, and a matching receiving part, which has a second contact part. The connection of the receiving part and the electrical contact plug is made by a screw-mounted reversible spring contact.
- the DE 39 15 611 C1 discloses an electrical connector, which is a receiving part in which a connector slot is formed with an insertion opening and rebounding contact springs.
- the invention comprises a plug part, with an electrically conductive contact part, which is insertable into the plug slot of the insulating on.
- the electrical contact part forms an electrically conductive connection via the spring-loaded contact tabs with the contact part of the receiving part.
- the respective conductive layers are structured in themselves and thus form there conductor tracks.
- the first conductive layer of the film composite has first, as spot welding connections formed internal load connections to power pads of power semiconductor devices. Likewise, this first conductive layer has internal control connections to control connection surfaces of power semiconductor components on a further conductor track. Furthermore, the first conductive layer has external load terminals for load connection to a printed circuit board on.
- the second conductive layer has similar external control terminals for control connection with the printed circuit board, wherein these terminals are each formed as solder joints.
- the film composite itself has film sections between the internal and the external terminals, which are arranged in guide portions of the housing, wherein the external terminals have parallel surface normals.
- the invention has for its object to present a hopped semiconductor circuit arrangement with a connection device in an embodiment of a film composite and with external contact devices for reversible connection to external leads.
- the inventive idea is based on a gehausten semiconductor circuit arrangement with at least one substrate.
- This substrate has a plurality of conductor tracks, whereupon semiconductor components are arranged in a circuit-oriented manner.
- semiconductor components are exemplified as integrated circuits or as individual components such as diodes or transistors. It may be preferred if at least one of the semiconductor components is a power semiconductor component, such as, for example, a power transistor or a power diode.
- passive electronic components such as resistors and / or capacitors can be arranged in a circuit-compatible manner on the conductor tracks of the substrate.
- the semiconductor circuit arrangement has at least one connection device for connecting the semiconductor components.
- This consists of a film composite with at least two electrically conductive layers, for example made of copper or aluminum, each with an insulating layer arranged therebetween, wherein at least one conductive layer is structured in itself and thus forms printed conductors.
- Fig. 1 shows a first embodiment of a gehausten semiconductor circuit arrangement according to the invention (1) in section in an arrangement with a heat sink (2) and a circuit board (7).
- the semiconductor circuit arrangement (1) is designed here as a power semiconductor module. This consists of a housing (3), which encloses a substrate (5) partially. At this electrically insulated substrate (5), the heat sink (2) is arranged and thermally conductively connected to the substrate (5).
- the interior of the power semiconductor module (1) facing side of the substrate (5) is formed as a plurality of mutually electrically insulated conductor tracks (54).
- a thermally conductive layer (56) is arranged between the base body (52) of the substrate and the heat sink (2).
- the power semiconductor module (1) has a connection device (6), which consists of a film composite.
- This film composite is formed here from a first (60) and a second (64) conductive layer which is in each case structured in itself and thus forms conductor tracks and an insulating layer (62) arranged therebetween.
- the first conductive layer (60) is here formed as aluminum foil, the second (64) as a copper foil and the insulating (62) as a plastic film.
- the respective layers (60, 62, 64) have a layer thickness adapted to the respective function between 10 ⁇ m and 500 ⁇ m.
- the first conductive layer (60) has an external contact device (600), designed here as a solder connection, to the printed circuit board (7).
- This first conductive layer (60) is structured in itself and thus forms conductor tracks.
- the film composite (6) furthermore has circuit-compatible plated-through holes of printed conductors of this first conductive layer (60) to form the second conductive layer (64) or conductor tracks formed there.
- This second conductive layer (64) of this film composite (6) has first, as spot welding connections formed inner contact devices (640) to pads (580) of semiconductor devices (58). Alternatively, adhesive, solder or pressure contact connections are possible here.
- the semiconductor components (58) are designed here as power semiconductor components, depending on a power transistor and a power diode. Basically, however, the arrangement of any active, exemplary in design integrated circuits, and / or passive electronic components, for example in embodiment of resistors possible.
- part of the second conductive layer (64) forms part of a second external contact device (4), here a load connection, for connection to an external supply line (8).
- a portion (644) of the second conductive layer (64) in the region of the second contact device (4) in a guide (32) in the housing (3) is arranged such that it is bent by more than 180 degrees and a contact surface (642 ) to the external supply line (8) is formed.
- the second contact device (4) is in this case self-locking.
- this second contact device (4) has a spring element (40) with an abutment (30) in the housing (3).
- This spring element (40) presses with its contact surface (402) on the external lead (8) such that this lead is clamped between the conductive layer (64) and the spring element (40) and thus the electrically conductive connection to the second conductive layer ( 64).
- Fig. 2 shows a second embodiment of a gehausten semiconductor circuit arrangement (1) according to the invention in section.
- the basic structure of the substrate (5) and the film composite (6) corresponds to that according to Fig. 1 ,
- the second contact device (4) as an external load connection, connects the second conductive layer (64) of the film composite (6) to an external supply line (8).
- the second conductive layer (64) no bending, it is guided exclusively in a section in a recess (32) of the housing (3).
- the electrical contact between the external lead (8) and the second conductive layer (64) is formed by means of a spring element (40).
- the spring element (40) has an abutment (30) in the housing (3) of the power semiconductor module (1).
- this is electrically conductively connected to a first contact surface (402) of the spring element (40), at the same time a second contact surface (646) of the suitably shaped spring element (40) is pressed onto the second conductive layer (64) and thus forms the electrical contact.
- the external supply line (8) can be configured here by way of example as a single cable or as a contact device of a printed circuit board.
- Fig. 3 shows a third embodiment of a gehausten semiconductor circuit arrangement (1) according to the invention in section, wherein these from that according to Fig. 2 differs in that here the first conductive layer (60) is connected to an external lead (8).
- the insulating layer (62) also in the region of the second contact device (4) not from the first conductive layer (60) remove.
- the second contact device (4) has as well as according to Fig. 2 a first contact surface (402) to the external lead (8) and a second contact surface (606) to the associated, here the first, conductive layer (60). Since this first conductive layer (60) is particularly suitable for control and auxiliary connections, it is preferable here to arrange a plurality of similar second contact devices (4) next to one another and thus to provide a plurality of closely adjacent external connections.
- the external supply line (8) can be designed here by way of example as a single cable or as a core of a ribbon cable.
- Fig. 4 shows a fourth embodiment of a gehausten semiconductor circuit arrangement (1) according to the invention in section.
- the basic structure of the substrate and the film composite (6) corresponds to that according to Fig. 2 ,
- the second contact device (4) in turn connects the second conductive layer (64) of the film composite (6) with an external supply line (8) as a load connection.
- the second conductive layer (64) also has no bending, it is guided exclusively in a section in a recess (32) of the housing (3).
- the electrical contact between the external lead (8) and the second conductive layer (64) is formed by means of a screw-clamp connection with a locking screw (80).
- the frame-like part of the housing (3) has a receptacle (34) with a thread.
- the second conductive layer (64) has a threaded recess (648).
- the conductive layer (64) and the external supply line (8) which is formed here as a flat metal molded part and a suitably arranged recess (82), at least one further metal molded part (92) is arranged with a recess to receive torques of the screw and the resulting stress on the first conductive layer (64) to minimize.
- the cover of the power semiconductor module (1) also has an aligned recess (36) for receiving the locking screw (80).
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
- Electric Clocks (AREA)
Claims (8)
- Dispositif de circuit à semiconducteur intégré dans un boîtier (1) avec au moins un substrat (5) comprenant des pistes conductrices (54) et des composants à semiconducteur (58), lesquels sont disposés à cet effet conformément au circuit, et avec un mécanisme de raccordement (6), lequel est disposé au-dessus des composants à semiconducteur (58) et lequel est constitué d'un système composite de feuilles réalisé à partir d'au moins deux couches électriquement conductrices (60, 64) qui comprennent respectivement une couche isolante (62), laquelle est disposée entre les au moins deux couches (60, 64) électriquement conductrices ;
dans lequel au moins l'une des couches électriquement conductrices (60, 64) est structurée en soi et forme par conséquent des pistes conductrices ;
dans lequel au moins l'une des couches électriquement conductrices (60, 64) présente des premiers mécanismes de mise en contact (640) avec des surfaces de connexion (580) des composants à semiconducteur (58) ; et
dans lequel au moins une partie de ces couches électriquement conductrices (60, 64) et/ou une autre couche électriquement conductrice (60, 64) forment une partie d'au moins un deuxième mécanisme de mise en contact (4) en vue de la connexion réversible avec une ligne d'alimentation (8) ;
dans lequel le deuxième mécanisme de mise en contact (4) présente au moins un élément formant ressort (40) avec un palier de butée (32), lequel se trouve dans le boîtier (3), ou présente au moins une vis de blocage (80). - Dispositif de circuit à semiconducteur intégré dans un boîtier selon la revendication 1,
dans lequel au moins un composant à semiconducteur (58) est un composant de puissance à semiconducteur, tel qu'un transistor de puissance ou une diode de puissance. - Dispositif de circuit à semiconducteur intégré dans un boîtier selon la revendication 1,
dans lequel au moins un composant à semiconducteur (58) est un circuit intégré. - Dispositif de circuit à semiconducteur intégré dans un boîtier selon la revendication 1,
l'épaisseur de couche des couches conductrices et de la couche isolante (60, 62, 64) est comprise entre 10 µm et 500 µm. - Dispositif de circuit à semiconducteur intégré dans un boîtier selon la revendication 1, en alternative avec le deuxième mécanisme de mise en contact (4) avec l'au moins un élément formant ressort (40) ; dans lequel l'élément formant ressort (40) du deuxième mécanisme de mise en contact (4) présente une première surface de contact (402) avec la ligne d'alimentation externe, ainsi qu'une deuxième surface de contact (606, 646) avec la couche conductrice (60, 64) associée.
- Dispositif de circuit à semiconducteur intégré dans un boîtier selon la revendication 1, en alternative avec le deuxième mécanisme de mise en contact (4) avec l'au moins un élément formant ressort (40) ; dans lequel l'élément formant ressort (40) du deuxième mécanisme de mise en contact (4) présente une première surface de contact (402) et la couche conductrice (60, 64) associée présente une surface de contact (642) avec la ligne d'alimentation (8) externe.
- Dispositif de circuit à semiconducteur intégré dans un boîtier selon la revendication 1,
dans lequel une section de la couche conductrice (60, 64) présente un guidage (32) dans le boîtier (3), dans la zone du deuxième mécanisme de mise en contact (4). - Dispositif de circuit à semiconducteur intégré dans un boîtier selon la revendication 1,
dans lequel le premier mécanisme de mise en contact (580) est conçu sous la forme d'une connexion par brasage ou sous la forme d'une liaison par collage ou sous la forme d'une mise en contact par pression ou sous la forme d'une liaison par soudure par points.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006027482A DE102006027482B3 (de) | 2006-06-14 | 2006-06-14 | Gehauste Halbleiterschaltungsanordnung mit Kontakteinrichtung |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1898466A2 EP1898466A2 (fr) | 2008-03-12 |
EP1898466A3 EP1898466A3 (fr) | 2008-05-07 |
EP1898466B1 true EP1898466B1 (fr) | 2017-08-23 |
Family
ID=38266224
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP07011533.2A Active EP1898466B1 (fr) | 2006-06-14 | 2007-06-13 | Circuit semi-conducteur dans un boîtier doté d'un dispositif de contact |
Country Status (2)
Country | Link |
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EP (1) | EP1898466B1 (fr) |
DE (1) | DE102006027482B3 (fr) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008034468B4 (de) * | 2008-07-24 | 2013-03-14 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul |
DE102008034467B4 (de) * | 2008-07-24 | 2014-04-03 | Semikron Elektronik Gmbh & Co. Kg | Anordnung mit einem Leistungshalbleitermodul und mit einer Verbindungseinrichtung |
DE102009017733B4 (de) | 2009-04-11 | 2011-12-08 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einer Verbindungseinrichtung und mit als Kontaktfeder ausgebildeten internen Anschlusselementen |
DE102009024385B4 (de) | 2009-06-09 | 2011-03-17 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung eines Leistungshalbleitermoduls und Leistungshalbleitermodul mit einer Verbindungseinrichtung |
DE102009024369B4 (de) * | 2009-06-09 | 2011-12-29 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronisches System |
DE102009024371B4 (de) * | 2009-06-09 | 2013-09-19 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung einer Stromrichteranordnung mit Kühleinrichtung und Stromrichteranordnung |
DE102009050178B3 (de) * | 2009-10-21 | 2011-05-26 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einem eine dreidimensionale Oberflächenkontur aufweisenden Substrat sowie Herstellungsverfahren hierzu |
EP2343780A1 (fr) | 2010-01-12 | 2011-07-13 | SEMIKRON Elektronik GmbH & Co. KG | Agencement de commutation semi-conducteur |
DE102010063387A1 (de) | 2010-12-17 | 2012-06-21 | Semikron Elektronik Gmbh & Co. Kg | Schaltungsanordnung mit mindestens zwei Teilmoduln |
DE102011075921B8 (de) * | 2011-05-16 | 2014-08-07 | Infineon Technologies Ag | Mittels Klemmkeil und Gegenkeil elektrisch anschließbares Leistungshalbleitermodul und Leistungshalbleitermodulsystem mit einem solchen Leistungshalbleitermodul |
DE102012202765B3 (de) * | 2012-02-23 | 2013-04-18 | Semikron Elektronik Gmbh & Co. Kg | Halbleitermodul |
DE102013104950B3 (de) * | 2013-05-14 | 2014-04-30 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul und Anordnung hiermit |
JP6366857B2 (ja) | 2015-10-28 | 2018-08-01 | 三菱電機株式会社 | 電力用半導体装置 |
DE102017100328B4 (de) * | 2017-01-10 | 2020-03-19 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einem Leistungshalbleiterbauelement |
WO2023213346A1 (fr) | 2022-05-06 | 2023-11-09 | Fachhochschule Kiel | Module semi-conducteur de puissance à connexion enfichable |
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GB578576A (en) * | 1944-11-03 | 1946-07-03 | Ericsson Telephones Ltd | Improvements in or relating to electrical multi-contact plugs |
US4939570A (en) * | 1988-07-25 | 1990-07-03 | International Business Machines, Corp. | High power, pluggable tape automated bonding package |
US5002494A (en) * | 1989-05-09 | 1991-03-26 | Amp Incorporated | Printed circuit board edge connector |
DE3915611C1 (en) * | 1989-05-12 | 1990-06-13 | Stocko Metallwarenfabriken Henkels Und Sohn Gmbh & Co, 5600 Wuppertal, De | Electrical plug and socket connector - has contact units with contact springs engaging socket suits |
US5923538A (en) * | 1994-10-17 | 1999-07-13 | Lsi Logic Corporation | Support member for mounting a microelectronic circuit package |
US6234820B1 (en) * | 1997-07-21 | 2001-05-22 | Rambus Inc. | Method and apparatus for joining printed circuit boards |
JP3648451B2 (ja) * | 1997-10-20 | 2005-05-18 | 株式会社日立製作所 | 半導体モジュール及びそれを用いる電力変換装置 |
DE10355925B4 (de) * | 2003-11-29 | 2006-07-06 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul und Verfahren seiner Herstellung |
DE102004025609B4 (de) * | 2004-05-25 | 2010-12-09 | Semikron Elektronik Gmbh & Co. Kg | Anordnung in Schraub- Druckkontaktierung mit einem Leistungshalbleitermodul |
DE102006013078B4 (de) * | 2006-03-22 | 2008-01-03 | Semikron Elektronik Gmbh & Co. Kg | Kompaktes Leistungshalbleitermodul mit Verbindungseinrichtung |
-
2006
- 2006-06-14 DE DE102006027482A patent/DE102006027482B3/de active Active
-
2007
- 2007-06-13 EP EP07011533.2A patent/EP1898466B1/fr active Active
Non-Patent Citations (1)
Title |
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None * |
Also Published As
Publication number | Publication date |
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EP1898466A3 (fr) | 2008-05-07 |
EP1898466A2 (fr) | 2008-03-12 |
DE102006027482B3 (de) | 2007-08-16 |
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