EP1865547A4 - SORROWING DEVICE, SQUEEZE PROCESSING AND ROTATION DOTING DEVICE - Google Patents

SORROWING DEVICE, SQUEEZE PROCESSING AND ROTATION DOTING DEVICE

Info

Publication number
EP1865547A4
EP1865547A4 EP06730688A EP06730688A EP1865547A4 EP 1865547 A4 EP1865547 A4 EP 1865547A4 EP 06730688 A EP06730688 A EP 06730688A EP 06730688 A EP06730688 A EP 06730688A EP 1865547 A4 EP1865547 A4 EP 1865547A4
Authority
EP
European Patent Office
Prior art keywords
ashing
impurity doping
doping apparatus
ashing method
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06730688A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP1865547A1 (en
Inventor
Cheng-Guo Jin
Bunji Mizuno
Yuichiro Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Publication of EP1865547A1 publication Critical patent/EP1865547A1/en
Publication of EP1865547A4 publication Critical patent/EP1865547A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3342—Resist stripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
EP06730688A 2005-03-30 2006-03-30 SORROWING DEVICE, SQUEEZE PROCESSING AND ROTATION DOTING DEVICE Withdrawn EP1865547A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005099148 2005-03-30
PCT/JP2006/306740 WO2006106871A1 (ja) 2005-03-30 2006-03-30 アッシング装置、アッシング方法および不純物ドーピング装置

Publications (2)

Publication Number Publication Date
EP1865547A1 EP1865547A1 (en) 2007-12-12
EP1865547A4 true EP1865547A4 (en) 2010-01-13

Family

ID=37073426

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06730688A Withdrawn EP1865547A4 (en) 2005-03-30 2006-03-30 SORROWING DEVICE, SQUEEZE PROCESSING AND ROTATION DOTING DEVICE

Country Status (6)

Country Link
US (1) US20090104783A1 (un)
EP (1) EP1865547A4 (un)
JP (1) JPWO2006106871A1 (un)
KR (1) KR20080005190A (un)
CN (1) CN100511599C (un)
WO (1) WO2006106871A1 (un)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5027066B2 (ja) * 2008-06-27 2012-09-19 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JPWO2010150315A1 (ja) * 2009-06-25 2012-12-06 パイオニア株式会社 光ディスクの製造方法および光ディスクの製造ライン
JP2012114157A (ja) * 2010-11-22 2012-06-14 Toshiba Corp ドロップレシピ作成方法およびデータベース作成方法
JP6681061B2 (ja) * 2015-05-08 2020-04-15 公立大学法人大阪 レジスト剥離方法およびレジスト剥離装置
JP7099897B2 (ja) * 2018-07-23 2022-07-12 株式会社アルバック ドライエッチング方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6128084A (en) * 1997-06-11 2000-10-03 Matsushita Electronics Corporation Evaluation method of semiconductor layer, method for fabricating semiconductor device, and storage medium
JP2001274139A (ja) * 2000-03-23 2001-10-05 Nec Corp アッシング装置およびアッシング方法
US6462817B1 (en) * 2000-05-12 2002-10-08 Carlos Strocchia-Rivera Method of monitoring ion implants by examination of an overlying masking material
JP2004179592A (ja) * 2002-11-29 2004-06-24 Matsushita Electric Ind Co Ltd プラズマドーピング方法およびデバイス
US20040260420A1 (en) * 2003-06-20 2004-12-23 Tokyo Electron Limited. Processing method and processing system
JP2005064197A (ja) * 2003-08-11 2005-03-10 Seiko Epson Corp レジスト膜のアッシング方法及びそのアッシング条件算出システム、並びに、レジスト膜のアッシング装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3824017A (en) * 1973-03-26 1974-07-16 Ibm Method of determining the thickness of contiguous thin films on a substrate
JPH01232202A (ja) * 1988-03-14 1989-09-18 Teru Kyushu Kk 膜厚測定方法
JP3698266B2 (ja) * 1995-12-28 2005-09-21 富士通株式会社 半導体装置の製造方法および半導体装置の製造装置
US6989900B1 (en) * 2001-04-02 2006-01-24 Advanced Micro Devices, Inc. Method of measuring implant profiles using scatterometric techniques
US6585908B2 (en) * 2001-07-13 2003-07-01 Axcelis Technologies, Inc. Shallow angle interference process and apparatus for determining real-time etching rate
US20040195208A1 (en) * 2003-02-15 2004-10-07 Pavel Elizabeth G. Method and apparatus for performing hydrogen optical emission endpoint detection for photoresist strip and residue removal
US7821655B2 (en) * 2004-02-09 2010-10-26 Axcelis Technologies, Inc. In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6128084A (en) * 1997-06-11 2000-10-03 Matsushita Electronics Corporation Evaluation method of semiconductor layer, method for fabricating semiconductor device, and storage medium
JP2001274139A (ja) * 2000-03-23 2001-10-05 Nec Corp アッシング装置およびアッシング方法
US6462817B1 (en) * 2000-05-12 2002-10-08 Carlos Strocchia-Rivera Method of monitoring ion implants by examination of an overlying masking material
JP2004179592A (ja) * 2002-11-29 2004-06-24 Matsushita Electric Ind Co Ltd プラズマドーピング方法およびデバイス
US20040260420A1 (en) * 2003-06-20 2004-12-23 Tokyo Electron Limited. Processing method and processing system
JP2005064197A (ja) * 2003-08-11 2005-03-10 Seiko Epson Corp レジスト膜のアッシング方法及びそのアッシング条件算出システム、並びに、レジスト膜のアッシング装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2006106871A1 *

Also Published As

Publication number Publication date
CN100511599C (zh) 2009-07-08
JPWO2006106871A1 (ja) 2008-09-11
EP1865547A1 (en) 2007-12-12
CN101151715A (zh) 2008-03-26
KR20080005190A (ko) 2008-01-10
WO2006106871A1 (ja) 2006-10-12
US20090104783A1 (en) 2009-04-23

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Designated state(s): DE FR GB

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: PANASONIC CORPORATION

A4 Supplementary search report drawn up and despatched

Effective date: 20091210

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Effective date: 20100129